WO2002101352A3 - Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films - Google Patents

Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films Download PDF

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Publication number
WO2002101352A3
WO2002101352A3 PCT/US2002/017909 US0217909W WO02101352A3 WO 2002101352 A3 WO2002101352 A3 WO 2002101352A3 US 0217909 W US0217909 W US 0217909W WO 02101352 A3 WO02101352 A3 WO 02101352A3
Authority
WO
WIPO (PCT)
Prior art keywords
high surface
film material
electronic
void
surface area
Prior art date
Application number
PCT/US2002/017909
Other languages
French (fr)
Other versions
WO2002101352A2 (en
WO2002101352A8 (en
Inventor
Kaan A Kalkan
Stephen J Fonash
Original Assignee
Penn State Res Found
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/104,759 external-priority patent/US7065091B2/en
Priority claimed from US10/144,456 external-priority patent/US7122790B2/en
Application filed by Penn State Res Found filed Critical Penn State Res Found
Priority to AU2002324437A priority Critical patent/AU2002324437A1/en
Publication of WO2002101352A2 publication Critical patent/WO2002101352A2/en
Publication of WO2002101352A3 publication Critical patent/WO2002101352A3/en
Publication of WO2002101352A8 publication Critical patent/WO2002101352A8/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

An electronic opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the elctrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to vlume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.
PCT/US2002/017909 2001-06-08 2002-06-06 Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films WO2002101352A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002324437A AU2002324437A1 (en) 2001-06-08 2002-06-06 Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US29685701P 2001-06-08 2001-06-08
US60/296,857 2001-06-08
US10/104,759 2002-03-21
US10/104,759 US7065091B2 (en) 2002-03-21 2002-03-21 Method and apparatus for scheduling and interleaving items using quantum and deficit values including but not limited to systems using multiple active sets of items or mini-quantum values
US10/144,456 US7122790B2 (en) 2000-05-30 2002-05-13 Matrix-free desorption ionization mass spectrometry using tailored morphology layer devices
US10/144,456 2002-05-13

Publications (3)

Publication Number Publication Date
WO2002101352A2 WO2002101352A2 (en) 2002-12-19
WO2002101352A3 true WO2002101352A3 (en) 2003-06-05
WO2002101352A8 WO2002101352A8 (en) 2003-08-14

Family

ID=27379813

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/017909 WO2002101352A2 (en) 2001-06-08 2002-06-06 Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Country Status (2)

Country Link
AU (1) AU2002324437A1 (en)
WO (1) WO2002101352A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777303B2 (en) 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
MY144626A (en) * 2002-03-19 2011-10-14 Univ California Semiconductor-nanocrystal/conjugated polymer thin films
US7227235B2 (en) * 2003-11-18 2007-06-05 Lucent Technologies Inc. Electrowetting battery having a nanostructured electrode surface
GB2421353A (en) * 2004-12-14 2006-06-21 Cambridge Display Tech Ltd Method of preparing opto-electronic device
US7678495B2 (en) 2005-01-31 2010-03-16 Alcatel-Lucent Usa Inc. Graphitic nanostructured battery

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5562516A (en) * 1993-09-08 1996-10-08 Silicon Video Corporation Field-emitter fabrication using charged-particle tracks
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5879828A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Membrane electrode assembly
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials
US6172902B1 (en) * 1998-08-12 2001-01-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-volatile magnetic random access memory
US6185961B1 (en) * 1999-01-27 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Nanopost arrays and process for making same
US6214195B1 (en) * 1998-09-14 2001-04-10 Nanomaterials Research Corporation Method and device for transforming chemical compositions
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5562516A (en) * 1993-09-08 1996-10-08 Silicon Video Corporation Field-emitter fabrication using charged-particle tracks
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US5879828A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Membrane electrode assembly
US6172902B1 (en) * 1998-08-12 2001-01-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-volatile magnetic random access memory
US6214195B1 (en) * 1998-09-14 2001-04-10 Nanomaterials Research Corporation Method and device for transforming chemical compositions
US6185961B1 (en) * 1999-01-27 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Nanopost arrays and process for making same
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials

Also Published As

Publication number Publication date
WO2002101352A2 (en) 2002-12-19
AU2002324437A1 (en) 2002-12-23
WO2002101352A8 (en) 2003-08-14

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