WO2002099942A1 - Laser semi-conducteur a base de nitrure - Google Patents
Laser semi-conducteur a base de nitrure Download PDFInfo
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- WO2002099942A1 WO2002099942A1 PCT/JP2002/005509 JP0205509W WO02099942A1 WO 2002099942 A1 WO2002099942 A1 WO 2002099942A1 JP 0205509 W JP0205509 W JP 0205509W WO 02099942 A1 WO02099942 A1 WO 02099942A1
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Definitions
- the present invention relates to a nitride semiconductor laser having a stress concentration suppressing layer between an active layer and a cap layer.
- G a N-based ⁇ —V compound semiconductors which are direct transition semiconductors with a forbidden band width ranging from 1.9 eV to 6.2 eV, have a range from the visible region to the ultraviolet region.
- semiconductor light emitting devices such as a semiconductor laser diode (LD) and a light emitting diode (LED), which can emit light
- LD semiconductor laser diode
- LED light emitting diode
- blue-violet semiconductor LD capable of obtaining light having an emission wavelength of about 400 nm has been demanded in order to improve the recording density of optical disks and the like.
- Blue semiconductor LDs with an emission wavelength of about 460 nm are expected to be applied to laser displays, and ultraviolet semiconductor LDs with an emission wavelength of 380 nm or less are expected to be used as light sources for exciting phosphors. Expected.
- These GaN-based semiconductor light-emitting devices are generally composed of GaN-based semiconductors grown on a substrate.
- a sapphire substrate is mainly used as a growth substrate for this GaN-based semiconductor, because there is no suitable substrate having good lattice matching with GaN. Matching and thermal expansion coefficient differences are very large.
- the substrate When the lattice matching with the substrate is poor and the difference in thermal expansion coefficient with the substrate is large, the effect on the crystallinity of the GaN-based semiconductor layer grown on the substrate is large. to alleviate, 1 0 8-1 0 1 () is also large quantities dislocation two Z cm is introduced.
- threading dislocations that propagate particularly in the thickness direction of the film are harmful to the device active layer formed near the film surface, and act as current leakage points and non-light emitting centers, etc., and reduce the electrical and optical characteristics of the device. Known as damaging.
- An object of the present invention is to provide a nitride semiconductor laser which has a flat cleaved end face and can prevent the laser end face from being destroyed during operation, and as a result has a long life. Disclosure of the invention The present inventors prayed for the end face of the degraded nitride semiconductor laser using a scanning electron microscope (SEM) and a transmission electron microscope (TEM). As a result, the vicinity of the active layer on the laser end face was destroyed by use. It has been found that this is one of the main causes of deterioration of the nitride semiconductor laser.
- SEM scanning electron microscope
- TEM transmission electron microscope
- the inventors of the present invention have conducted intensive studies based on such knowledge to eliminate the above-mentioned causes of deterioration.
- the laser end face can be used. It has been found that it is possible to suppress the destruction in the vicinity of the active layer and to improve the life of the nitride semiconductor laser.
- composition and lattice constant of the stress concentration suppressing layer are inclined in the layer from the active layer side to the cap layer side so that the composition and lattice constant of the active layer change smoothly to those of the cap layer.
- concentration of stress at the interface between the active layer and the cap layer can be suppressed.
- Figure 2 shows a schematic diagram of a cross section parallel to the stripe on the front end face. At the front end face 15, the end face fracture 16 occurred so that the crystal could be cut off near the active layer 7. This scouring of the crystal was most prominent at the interface between the active layer 7 and the cap layer 8.
- FIG. 3 shows the front end strip.
- FIG. 2 shows a schematic view of a parallel section. It has been found that a step 17 of about several nm or less may be formed at the interface between the active layer 7 and the cap layer 8 on the front end face 15.
- Such a step 17 is generated to alleviate the stress concentration caused by the lattice mismatch between the crystals of the active layer 7 and the cap layer 8. Due to this step 17 and excessive stress concentration at the interface between the active layer 7 and the cap layer 8, particularly, the end face breaks around the interface between the active layer 7 and the cap layer 8. Was found to occur.
- the composition of the well layer is Ga. . 9 2 I n. . 8 N
- the composition of the barrier layer is Ga. 9 8 In . . It consists of a multiple quantum well (MQW) structure with 2 N and a cap layer of A 1. . 5 G a. . Consisting of 8 5 N mixed crystal. Free standing G a. . 9 2 I n 0. 0 8 N, the G ao. 9 8 I n 0 .
- the present inventors have obtained the following findings based on the above examination results. That is, by suppressing excessive stress concentration due to lattice mismatch between the active layer and the cap layer in the vicinity of the active layer 7, the step 17 at the interface between the active layer 7 and the cap layer 8 is substantially reduced. Thus, a semiconductor laser having a flat cleavage end face can be manufactured. Further, by suppressing excessive stress concentration near the active layer on the laser end face and making the cleavage end face flat, it is possible to prevent end face deterioration and destruction occurring during operation.
- the present inventors have made intensive studies concrete means for suppressing excessive stress concentration near the active layer, between the active layer and the cap layer, A l x G ai y I n y N (1>x> 0, 1>y> 0, 1> x + y> 0) Insert a stress concentration suppression layer consisting of a mixed crystal layer, and on the active layer side, the composition is the same as that of the active layer barrier layer. Composition, ie, G a. 9 8 In . . And 2 N, whereas, the same composition as the Kiya' flop layer with a cap layer side, sand Wachi eight 1. . 1 5 0. . 8 5? ⁇ And then, by tilting the composition of the stress concentration suppressing layer to change smoothly from the active layer side to the cap layer side, that it is possible to suppress the excessive stress concentration near the active layer Obtained knowledge.
- FIG. 4A shows a schematic diagram of the band structure near the active layer of a conventional nitride semiconductor laser.
- the band gap between the active layer 7 and the cap layer 8 is large, and stress concentration occurs at the interface between the active layer 7 and the cap layer 8.
- FIGS. 4B and 4C show schematic views of the band structure near the active layer of the nitride semiconductor laser according to the present invention.
- the active layer 7 smoothly moves from the active layer 7 to the cap layer 8. To suppress excessive stress concentration near the active layer.
- a nitride semiconductor laser having a stress concentration suppressing layer between an active layer and a cap layer
- the stress concentration suppressing layer has a function of mitigating a change in band gap between the active layer and the cap layer.
- the stress concentration suppressing layer has the same composition as the active layer on the active layer side, has the same composition as the cap layer on the cap layer side, and the composition of the stress concentration suppressing layer is The nitride semiconductor laser according to the above (1), wherein the nitride semiconductor laser is inclined toward the top layer.
- the active layer has an n-type cladding layer on the side opposite to the stress concentration suppressing layer
- the cap layer has a p-type cladding layer on the side opposite to the stress concentration suppressing layer
- the band gap of the active layer Is smaller than the band gaps of the n-type and p-type cladding layers, and the band gap of the cap layer is larger than the band gap of the p-type cladding layer.
- the n-type cladding layer is composed of an n-type A 1 G a N mixed crystal containing Si as an n-type impurity
- the p-type cladding layer is composed of p-type impurity containing Mg as a p-type impurity.
- an n-type optical guide layer is provided between the active layer and the n-type cladding layer, and a p-type optical guiding layer is provided between the p-type cladding layer and the cap layer.
- the n-type optical guide layer is made of n-type GaN containing Si as an n-type impurity, and the p-type optical guide layer contains Mg as a p-type impurity! )
- an n-type contact layer is provided on the side of the n-type cladding layer opposite to the n-type optical guiding layer, and a p-type contact is provided on the side of the p-type cladding layer opposite to the p-type optical guiding layer.
- n-type contact layer is composed of n-type GAN containing Si as n-type impurity
- p-type contact layer is composed of p-type G containing Mg as p-type impurity.
- active layer has a multiple quantum well structure, and consists of the barrier layer G ai- yl I n yl N ( 1> y 1> 0), the cap layer is A l ⁇ G at- xl N (1> x 1> 0), and the stress concentration suppression layer is from A lx G ai— x _ y I n y N (l>x> 0, 1>y> 0, 1> x + y> 0)
- the nitride semiconductor laser according to the above (1), wherein
- the active layer is sandwiched between the p-type cladding layer and the n-type cladding layer, and the cap layer is sandwiched between the p-type cladding layer and the active layer.
- the nitride semiconductor laser according to (11) is sandwiched between the p-type cladding layer and the n-type cladding layer, and the cap layer is sandwiched between the p-type cladding layer and the active layer.
- the n-type cladding layer is composed of an n-type AlGaN mixed crystal containing Si as an n-type impurity
- the p-type cladding layer is composed of a P-type layer containing Mg as a p-type impurity.
- an n-type optical guide layer is provided between the active layer and the n-type cladding layer, and a p-type optical guiding layer is provided between the p-type cladding layer and the cap layer.
- the n-type optical guide layer is composed of n-type GaN containing Si as an n-type impurity, and the p-type optical guide layer is composed of P containing Mg as a p-type impurity.
- an n-type contact layer is provided on the opposite side of the n-type cladding layer from the n-type optical guiding layer, and a P-type contact layer is provided on the p-type cladding layer on the side opposite to the p-type optical guiding layer.
- a method for manufacturing a nitride semiconductor laser comprising: a step of growing a stress concentration suppression layer on an active layer; and a step of growing a cap layer on the stress concentration suppression layer.
- the stress concentration suppressing layer has the same composition as the active layer on the active layer side, has the same composition as the cap layer on the cap layer side, and the composition of the stress concentration suppressing layer is the active layer.
- the method includes a step of growing an active layer on the n-type cladding layer and a step of growing a p-type cladding layer on the cap layer, and the band gap of the active layer is The band gap of the cap layer is smaller than the band gap of the n-type and p-type cladding layers.
- the n-type cladding layer is composed of an n-type A 1 G aN mixed crystal containing Si as an n-type impurity, and the p-type cladding layer contains Mg as a p-type impurity;
- a step of growing an n-type optical guide layer on the n-type cladding layer, a step of growing an active layer on the n-type optical guide layer, and a step of growing a P-type layer on the cap layer The method of manufacturing a nitride semiconductor laser according to the above item (19), comprising a step of growing an optical guide layer and a step of growing a P-type clad layer on the P-type optical guide layer.
- the n-type optical guide layer is composed of n-type GaN containing Si as an n-type impurity
- the p-type optical guide layer is composed of p-type containing Mg as a p-type impurity.
- the method further comprises a step of growing an n-type contact layer on the n-type contact layer and a step of growing a p-type contact layer on the p-type contact layer.
- the method for producing a nitride semiconductor laser according to (25) is a step of growing an n-type contact layer on the n-type contact layer and a step of growing a p-type contact layer on the p-type contact layer.
- the n-type contact layer is made of n-type GaN containing Si as an n-type impurity
- the p-type contact layer is made of p-type GAN containing Mg as a p-type impurity.
- the present invention (2 9) having an active layer of multiple quantum well structure, and the barrier layer G a - yl I n yl consist N (1> y 1> 0 ), the cap layer A lxi G a - xl N ( 1> x 1> 0), and the stress concentration suppression layer consists of A lx G ai—x— y I n y N (l>x> 0, 1>y> 0, 1> ⁇ + y> 0) (19) The method for manufacturing a nitride semiconductor laser according to (19),
- the n-type cladding layer is composed of an n-type AlGaN mixed crystal containing Si as an n-type impurity
- the p-type cladding layer is composed of p-type impurity containing Mg as a p-type impurity.
- the present invention relates to the method for producing a nitride semiconductor laser according to the above (31), wherein the method comprises a type A 1 GaN mixed crystal.
- An n-type optical guide layer is formed on the n-type cladding layer. Lengthening, growing an active layer on the n-type light guide layer, growing a p-type light guide layer on the cap layer, and forming a p-type light guide on the P-type light guide layer (29)
- the n-type optical guide layer is composed of n-type GaN containing Si as an n-type impurity
- the p-type optical guide layer is composed of P containing Mg as a p-type impurity.
- the n-type contact layer is made of n-type GaN containing Si as an n-type impurity
- the p-type contact layer is made of p-type GaN containing Mg as a p-type impurity.
- FIG. 1 is a schematic sectional view of a conventional nitride semiconductor laser.
- FIG. 2 is a schematic diagram showing a state of end face fracture in a conventional nitride semiconductor laser after deterioration. The drawing is a cross section of the laser end face parallel to the stripe direction.
- FIG. 3 is a schematic view showing a state of an end face at the time of cleavage in a conventional nitride semiconductor laser.
- the drawing shows the laser end face. It is a cross section parallel to the ripe direction.
- FIG. 4A is a schematic diagram of a band structure near an active layer of a conventional nitride semiconductor laser.
- 4B and 4C are schematic diagrams of the band structure near the active layer of the nitride semiconductor laser according to the present invention.
- FIG. 5 is a schematic view of a cross section perpendicular to the cavity length direction of the nitride semiconductor laser according to the present invention.
- FIG. 6 is a diagram showing a gradient range and a gradient method of the composition of the stress concentration suppressing layer in the nitride semiconductor laser according to the present invention.
- a nitride semiconductor laser is a semiconductor laser composed of a nitride semiconductor.
- the GaN-based semiconductor is a concept included in a nitride semiconductor.
- the nitride semiconductor laser according to the present invention is characterized by having a stress concentration suppressing layer between an active layer and a cap layer.
- the stress concentration suppressing layer By including the stress concentration suppressing layer, the lattice mismatch between the active layer and the cap layer is improved.
- the stress concentration caused by such a case can be suppressed.
- the stress concentration suppression layer suppresses the stress concentration caused by the lattice mismatch between the active layer and the cap layer by mitigating the change in the band gap between the active layer and the cap layer. be able to.
- a stress concentration suppressing layer is provided between the active layer and the cap layer, and the stress concentration suppressing layer has the same composition as the active layer on the active layer side.
- the nitride on the cap layer side has the same composition as the cap layer, and the composition of the stress concentration suppressing layer is inclined from the active layer side to the cap layer side, that is, changes gradually.
- Semiconductor laser As described above, by gradually changing the composition of the stress concentration suppressing layer from the active layer side to the cap layer side, the band gap change from the active layer to the cap layer can be mitigated. In addition, stress concentration caused by lattice mismatch between the active layer and the cap layer can be suppressed.
- the active layer may have any known structure.
- the composition of the stress concentration suppressing layer on the active layer side is the barrier layer of the active layer.
- the composition is preferably the same as
- the nitride semiconductor laser according to the present invention may have a known structure used in this technical field as long as it has the above-mentioned features.
- a p-type cladding layer and an n-type cladding layer are provided, and these cladding layers are provided between the n-type and P-type cladding layers.
- Active layer with a smaller band gap than the p-type cladding layer and the active layer has a cap layer with a larger gate gap than the p-type cladding layer, and reduces the change in band gap between the active layer and the cap layer between the active layer and the cap layer.
- a semiconductor laser having a stress concentration suppressing layer having a function is exemplified.
- the p-type cladding layer is preferably made of, for example, a nitride semiconductor containing a p-type impurity such as Mg. Further, the n-type cladding layer is preferably made of a nitride semiconductor containing an n-type impurity such as Si.
- a p-type optical guide layer is further provided between the p-type cladding layer and the cap layer.
- a nitride semiconductor laser in which an n-type optical guide layer is provided between the active layer and the n-type cladding layer is further provided between the active layer and the n-type cladding layer.
- the band gap of the p-type optical guide layer is smaller than the band gap of the p-type cladding layer, and the band gap of the n-type optical guide layer is smaller than the band gap of the n-type cladding layer.
- the band gap of the n-type and p-type optical guide layers is preferably larger than the band gap of the active layer.
- the p-type optical guide layer is preferably made of a nitride semiconductor containing a p-type impurity such as Mg
- the n-type optical guide layer is preferably made of a nitride semiconductor containing an n-type impurity such as Si. It preferably comprises
- a p-type contact layer is provided on the p-type cladding layer on the side opposite to the p-type optical guiding layer, and an n-type cladding layer of the n-type cladding layer is provided.
- An n-type contact layer may be provided on the side opposite to the gate layer.
- the p-type contact layer is preferably made of, for example, a nitride semiconductor containing a p-type impurity such as Mg.
- the n-type contact layer is an n-type contact layer such as Si. It is preferable to use a nitride semiconductor containing a pure substance.
- G ai -y 1 In y An active layer having a multiple quantum well structure having a barrier layer composed of N (1> y 1>0); a cap layer composed of A l xl G ai — xl N (l) xl>0); A nitride having a stress concentration suppressing layer composed of A 1 x G a _ y I n y N (1>X> 0, 1>y> 0, 1> x + y> 0) between the cap layer and the cap layer A semiconductor laser.
- a 1 x G a! _ X _ y I n y A 1 and the atomic composition ratio of I n of N (x, y) is the direction from the active layer side to the cap layer side, tilted (0, yl) or al (xl, 0) Preferably, that is, change gently.
- y 1 is the atomic composition ratio of I n in G a E y I n yl N constituting the barrier layer
- x 1 is A 1 ⁇ G a constituting the caps layer - A 1 in xl N
- (X, y) is (0, y1) at the interface between the stress concentration suppressing layer and the active layer, and (xl, 0) at the interface between the stress concentration suppressing layer and the cap layer. It is preferable that (x, yl) is passed from (0, yl) to (xl, 0) in the stress concentration suppressing layer through the black-out area in FIG. At that time, it is more preferable that the composition of the stress concentration suppressing layer changes smoothly in the layer. Specifically, it is preferable that the inclination of the trajectory of (X, y) from (0, y1) to (X1, 0) is always negative, and more preferable that (x, y) be the one shown in FIG. In some cases, the trajectories of 1 to 3 are drawn. , The nitride semiconductor laser according to the preferred embodiment of the present invention may have a known structure used in the technical field as long as it has the above-described features.
- the stacked structure including the active layer, the stress concentration suppressing layer, and the cap layer described above includes an n-type cladding layer and a p-type cladding layer.
- Semiconductor laser sandwiched between the two That is, an active layer is formed on the n-type cladding layer, a stress concentration suppressing layer is formed on the active layer, a cap layer is formed on the stress concentration suppressing layer, and a P layer is formed on the cap layer.
- the composition of the p-type cladding layer and the n-type cladding layer is not particularly limited, but the n-type cladding layer is doped with Si as an n-type impurity.
- the p-type cladding layer is made of a mixed crystal, and the p-type cladding layer is made of a p-type A 1 G aN mixed crystal to which Mg is added as a P-type impurity.
- a P-type optical guide layer is provided between the p-type cladding layer and the cap layer, and an n-type optical guide layer is provided between the active layer and the n-type cladding layer.
- Layer may be provided.
- a p-type contact layer is provided on the side of the p-type cladding layer opposite to the p-type optical guiding layer, and an n-type contact layer is provided on the side of the n-type cladding layer opposite to the n-type optical guiding layer.
- a layer may be provided.
- the composition of each of the above layers is not particularly limited, but the n-type optical guide layer is made of n-type GaN to which Si is added as an n-type impurity, and the p-type optical guide layer is made of p-type impurity. Of p-type G aN to which Mg is added. Also, the n-type contact layer is made of n-type GaN doped with Si as an n-type impurity, Preferably, the contact layer is made of p-type GaN to which Mg is added as a p-type impurity.
- the method for manufacturing the nitride semiconductor laser according to the present invention may be in accordance with a known method. Specifically, the nitride semiconductor laser according to the present invention can be manufactured by sequentially combining the steps of growing the nitride semiconductor layer constituting the nitride semiconductor laser under the condition that lateral growth occurs. it can.
- the method for growing the nitride semiconductor layer constituting the nitride semiconductor laser according to the present invention is not particularly limited.
- a metal organic vapor deposition (MOCVD) method, a halide vapor deposition method, or a molecular beam epitaxy method may be used.
- a known method such as the one (Molecular Beam Epitaxy; MBE) method may be used.
- FIG. 5 is a sectional view showing a configuration of a nitride semiconductor laser according to a specific embodiment of the present invention.
- the substrate 1 include a sapphire substrate, SiC, Si, GaAs, spinel, and Zn ⁇ , but it is preferable to use a sapphire substrate mainly composed of a c-plane.
- a nitride semiconductor for example, GaN, A1N, or InGaN
- an undoped GaN layer is particularly preferable.
- the first GaN layer 3 may be an GaN layer of an AND type, or a GaN layer doped with an impurity, for example, n type doped with an n-type impurity such as Si.
- Type G a N layer
- an AND GaN layer is preferable.
- the substrate 1, the buffer layer 2, and a part of the first GaN layer are removed, for example, in the form of stripes, and the second GaN layer 4 is overlaid with the ELO as shown in FIG. It is laminated by the method.
- the second GaN layer 4 is made of an n-type GaN to which Si is added as an n-type impurity, and has a role as an n-type contact layer.
- an n-type clad layer 5 On this second GaN layer 4, an n-type clad layer 5, an n-type optical guide layer 6, an active layer 7, a stress concentration suppressing layer 47, a cap layer 8, A p-type light guide layer 9, a p-type cladding layer 10 and a p-type contact layer 11 are sequentially laminated.
- the n-type cladding layer 5 has a thickness of about 1 m and is composed of an n-type A1Gan mixed crystal to which Si is added as an n-type impurity.
- the n-type optical guide layer 6 has a thickness of about 0.1 m and is made of n-type GaN to which Si is added as an n-type impurity.
- the active layer 7 is composed of a GaInN mixed crystal having a multiple quantum well (MQW) structure with a well thickness of about 3 nm and a barrier layer of about 4 nm. .
- the stress concentration suppressing layer 47 is composed of an A1GaInN mixed crystal whose composition is gradually inclined.
- the cap layer 8 is provided to prevent the active layer 7 from being deteriorated when the upper structure including the p-type optical guide layer is formed on the active layer 7, and has a thickness of about 20 nm. It is composed of about 1 A 1 G a N mixed crystals.
- the P-type optical guide layer 9 has a thickness of about 0.1 m and is made of p-type GaN to which Mg is added as a p-type impurity.
- the P-type cladding layer 10 has a thickness of about 0.5 mm and is a p-type A 1 G a N mixed crystal doped with Mg as a p-type impurity. It is composed of Further, the p-type cladding layer 10 may have a superlattice structure composed of an AlGaN layer and a GaN layer.
- the p-type contact layer 11 has a thickness of about 0.1 zm,
- the upper part of the p-type cladding layer 10 and the p-type contact layer 11 may be processed into a striped upper mesa structure having a tapered cross-sectional shape in order to confine the current.
- a p-side electrode 13 is formed through an opening provided in the insulating layer 12. Are formed.
- No. 3 has a configuration in which palladium (Pd), platinum (Pt), and gold (AU) are sequentially laminated from the p-type contact layer 11 side.
- the p-side electrode 13 has a narrow band shape (the first
- an n-side electrode 14 in which titanium (T i), aluminum (A 1), and gold (A u) are sequentially laminated is provided.
- the nitride semiconductor laser has a p-side electrode
- Reflector mirror layers are provided on a pair of side surfaces perpendicular to the length direction of 13 (that is, the resonator length direction).
- Such a manufacturing method is one of the specific embodiments of the method for manufacturing a nitride semiconductor laser according to the present invention.
- a known pretreatment such as cleaning the surface of the substrate 1 by thermal cleaning or the like is performed as desired.
- a buffer layer 2 is grown on the substrate 1 by the MO CVD method. Knoff
- the growth temperature of the key layer 2 is preferably lower than the growth temperature of the first GaN layer 3 described later, specifically, about 520.
- the first GaN layer 3 is grown on the buffer layer 2 by the MOVCV method.
- the growth temperature of the first GaN layer 3 is, for example, about 900 to 110 ° C., preferably about 100 ° C.
- the thickness of the first GaN layer 3 is not particularly limited, but is appropriately set so that the uneven structure shown in FIG. 5 can be formed. Since the period of the concave-convex structure is preferably about 3 to 25 m, it is preferable to form the first GaN layer 3 with a thickness of about 1 to 5.
- the substrate is removed from the MOCVD apparatus or the substrate, a mask forming film for forming a protective film mask is formed on the first GaN layer 3 and patterned to form a protective film mask having a predetermined pattern. (Not shown).
- a protective film mask having a predetermined pattern first, a mask forming film is formed on the first GaN layer 3 using a technique such as a CVD method, an evaporation method, or a sputtering method. Then, a resist film is formed on the mask forming film. Subsequently, by exposing and developing a desired pattern, a resist pattern in which the pattern is transferred is formed. By etching the mask forming film using the formed resist pattern, a protective film mask having a desired pattern can be formed.
- a technique such as a CVD method, an evaporation method, or a sputtering method.
- the pattern is not particularly limited as long as the pattern is a shape that exposes a part of the first GaN layer corresponding to the concave portion of the concavo-convex structure to be formed.
- a strip shape, a staggered shape, a dot shape, a grid shape, and the like can be given.
- set the strip width to about 0.5. It is preferable that the distance be about 20 to 20 zm and the strip interval be about 1 to 25 im.
- the thickness of the protective film is not particularly limited, but is preferably about 1 xm or less in consideration of easiness of processing.
- the material of the mask forming film is not particularly limited as long as the nitride semiconductor layer does not grow on the protective film or has a property that it is difficult to grow.
- S i ⁇ , S i N x , T i N, T i O, W, etc. can be used.
- the first GaN layer exposed from the protective film mask and the upper layer portion of the substrate are selectively removed by etching.
- the protective film mask is removed, and the concave portion exposing the substrate and the first concave portion are removed.
- a concavo-convex structure having a GaN layer 3 and a convex portion formed of an upper layer of the substrate 1 is formed on the substrate surface.
- the etching amount of the substrate Is about 2 / m or less, preferably about 0.2 m.
- the cross-sectional shape of the projection formed by etching may be tapered, but is preferably a vertical surface.
- etching method examples include a wet etching method and a dry etching method, and a dry etching method is preferable.
- dry etching method examples include a reactive ion dry etching (RIBE) method and a reactive ion beam dry etching (RIBE) method.
- an n-type second GaN layer 4 and an n-type Ladd layer 5 n-type optical guide layer 6 of n-type GaN, active layer 7, stress concentration suppressing layer 47, cap layer 8, p-type optical guide layer 9 of p-type GaN,
- a p-type clad layer 10 composed of p-type AlGaN and a p-type contact layer 11 composed of p-type GaN are sequentially laminated.
- an active layer 7 having a multiple quantum well structure having a GaInN layer as a light-emitting layer is formed.
- a stress concentration consisting of an A1GaInN layer and having a compositional gradient is formed.
- a suppression layer 47 is formed, and a p-type A 1 GaN cap layer 8 is grown thereon at a relatively low temperature.
- the In composition in the active layer having the GaInN multi-quantum well structure is preferably adjusted to, for example, about 0.08 in the well layer, and to, for example, about 0.02 in the nori layer.
- the A 1 composition ratio in the cap layer made of A 1 GaN is preferably adjusted to, for example, about 0.15.
- the stress concentration suppressing layer 47 A 1 x G a!
- the atomic composition ratio (x, y) of A 1 and In in _ x _ y I n y N is the same as that of the barrier layer of the active layer on the active layer side (0, 0.02).
- the stress concentration suppressing layer 47 is grown on the cap layer side so as to have a value of (0.15, 0) having the same composition as the cap layer.
- trimethylgallium ((CH 3) 3 G a; TMG) is used as a raw material for Group III element Ga, and as a raw material for Group III element A 1.
- trimethylaluminum ((CH 3 ) 3 A 1; TMA 1), and trimethyl indium ((CH 3 ) 3 In ; TM In) as a group III material In.
- ammonia (NH 3 ) as a raw material for N of group V elements.
- the carrier gas is, for example, hydrogen (H 2 ) and nitrogen (N 2 ) It is preferable to use a mixed gas of
- Bok as for example bis two methylcyclopentadienyl downy evening down Genis Le magnesium ((CH 3 C 5 H 4 ) 2 M g; M e C p 2 M g) or bis - Shikuropen evening Genis Le magnesium ((C 5 H 5) 2 M g; C p 2 M g) preferably used.
- the substrate on which the nitride semiconductor layer has been grown is removed again from the MOCVD apparatus, and an insulating layer 1 made of SiO 2 is formed on the p-type contact layer 11 made of p-type GaN by, for example, a CVD method. Form 2.
- a resist film (not shown) is applied on the insulating layer 12, and a mask pattern corresponding to the formation position of the P-side electrode 13 is formed by photolithography. Thereafter, etching is performed using this as a mask, and the insulating layer 12 is selectively removed to form an opening corresponding to the formation position of the p-side electrode 13.
- the insulating layer 12, p-type contact layer 11, ⁇ ) -type cladding layer 10, and p-type optical guide correspond to the formation position of the n-side electrode 14.
- the layer 9, the cap layer 8, the stress concentration suppressing layer 47, the active layer 7, the n-type optical guide layer 6, and the n-type cladding layer 5 are selectively removed in this order.
- titanium, aluminum and gold are selectively vapor-deposited on the second GaN layer 4 to form an n-side electrode 14.
- the substrate 1 is cleaved with a predetermined width perpendicular to the length direction (resonator length direction) of the p-side electrode 13, and a reflecting mirror layer is formed on the cleavage plane .
- the nitride semiconductor laser according to the present invention shown in FIG. 5 is formed.
- the growth method has been described as being limited to the MOCVD method.
- other growth methods such as an eight-ride vapor phase growth method and a molecular beam epitaxy (MBE) method are used. You may make it grow by a vapor phase growth method.
- MBE molecular beam epitaxy
- the stress at the interface between the active layer and the cap layer (hereinafter referred to as the active layer / cap layer interface) is introduced by introducing the stress concentration suppressing layer made of the gradient composition A 1 G a InN mixed crystal. Since the concentration of the active layer is suppressed, the generation of a step at the interface between the active layer and the cap layer at the cleaved end face can be suppressed in the cleavage process required for manufacturing a semiconductor laser. If stress is concentrated at the interface between the active layer and the Z-cap layer, the thermal stress near the end face due to the operation will cause the end face destruction, and the life of the semiconductor laser will be shortened. However, in the semiconductor laser according to the present invention, since the stress concentration at the interface between the active layer and the cap layer is suppressed, the progress of the end face breakdown can be suppressed, and as a result, the life of the semiconductor laser can be extended. .
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Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US10/343,878 US6891268B2 (en) | 2001-06-05 | 2002-06-04 | Nitride semiconductor laser |
DE60234590T DE60234590D1 (de) | 2001-06-05 | 2002-06-04 | Nitridhalbleiterlaser |
EP02730913A EP1394912B1 (en) | 2001-06-05 | 2002-06-04 | Nitride semiconductor laser |
US11/090,749 US20050167836A1 (en) | 2001-06-05 | 2005-03-24 | Detailed description of the presently preferred embodiments |
US11/090,340 US7135772B2 (en) | 2001-06-05 | 2005-03-25 | Nitride semiconductor laser |
Applications Claiming Priority (2)
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JP2001-169440 | 2001-06-05 | ||
JP2001169440A JP3876649B2 (ja) | 2001-06-05 | 2001-06-05 | 窒化物半導体レーザ及びその製造方法 |
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US10343878 A-371-Of-International | 2002-06-04 | ||
US11/090,749 Continuation US20050167836A1 (en) | 2001-06-05 | 2005-03-24 | Detailed description of the presently preferred embodiments |
US11/090,340 Continuation US7135772B2 (en) | 2001-06-05 | 2005-03-25 | Nitride semiconductor laser |
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WO2002099942A1 true WO2002099942A1 (fr) | 2002-12-12 |
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PCT/JP2002/005509 WO2002099942A1 (fr) | 2001-06-05 | 2002-06-04 | Laser semi-conducteur a base de nitrure |
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US (3) | US6891268B2 (ja) |
EP (1) | EP1394912B1 (ja) |
JP (1) | JP3876649B2 (ja) |
CN (1) | CN1203598C (ja) |
DE (1) | DE60234590D1 (ja) |
WO (1) | WO2002099942A1 (ja) |
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Publication number | Publication date |
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EP1394912A4 (en) | 2007-02-21 |
CN1203598C (zh) | 2005-05-25 |
EP1394912B1 (en) | 2009-12-02 |
US6891268B2 (en) | 2005-05-10 |
US20050167836A1 (en) | 2005-08-04 |
US7135772B2 (en) | 2006-11-14 |
US20050167835A1 (en) | 2005-08-04 |
US20040012011A1 (en) | 2004-01-22 |
JP2002368343A (ja) | 2002-12-20 |
EP1394912A1 (en) | 2004-03-03 |
DE60234590D1 (de) | 2010-01-14 |
CN1465123A (zh) | 2003-12-31 |
JP3876649B2 (ja) | 2007-02-07 |
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