WO2002071450A3 - Led lead for improved light extraction - Google Patents

Led lead for improved light extraction Download PDF

Info

Publication number
WO2002071450A3
WO2002071450A3 PCT/US2002/006494 US0206494W WO02071450A3 WO 2002071450 A3 WO2002071450 A3 WO 2002071450A3 US 0206494 W US0206494 W US 0206494W WO 02071450 A3 WO02071450 A3 WO 02071450A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact surface
light extraction
lower contact
improved light
pad
Prior art date
Application number
PCT/US2002/006494
Other languages
French (fr)
Other versions
WO2002071450A2 (en
Inventor
Ivan Eliashevich
Michael G Brown
Original Assignee
Emcore Corp
Ivan Eliashevich
Michael G Brown
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp, Ivan Eliashevich, Michael G Brown filed Critical Emcore Corp
Priority to AU2002303112A priority Critical patent/AU2002303112A1/en
Publication of WO2002071450A2 publication Critical patent/WO2002071450A2/en
Publication of WO2002071450A3 publication Critical patent/WO2002071450A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

Light emitting diodes (LEDs) are provided with electrode and pad structures, wich result in improved light extraction for the LED. The LED may be foremd as a die withan upper contact surface (28) and a lower contact surface (20,22). A mesa (24) including at least one generally vertical edge surface (26) projects upwardly from the lower contact surface. First and second pads (32, 34) are disposed on teh lower contact surface. The second pad desirably does not make ohmic contact with the lower contact surface. A conductive lead (36) is in bridging contact with the second pad and the upper contact surface of the mesa.
PCT/US2002/006494 2001-03-06 2002-03-05 Led lead for improved light extraction WO2002071450A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002303112A AU2002303112A1 (en) 2001-03-06 2002-03-05 Led lead for improved light extraction

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27359101P 2001-03-06 2001-03-06
US60/273,591 2001-03-06

Publications (2)

Publication Number Publication Date
WO2002071450A2 WO2002071450A2 (en) 2002-09-12
WO2002071450A3 true WO2002071450A3 (en) 2002-11-21

Family

ID=23044589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/006494 WO2002071450A2 (en) 2001-03-06 2002-03-05 Led lead for improved light extraction

Country Status (2)

Country Link
AU (1) AU2002303112A1 (en)
WO (1) WO2002071450A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166871B2 (en) 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7211831B2 (en) 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7105861B2 (en) 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7274043B2 (en) 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7341880B2 (en) 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
CN100399588C (en) * 2004-11-08 2008-07-02 晶元光电股份有限公司 Point light source light-emitting diode structure and producing method thereof
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US7692207B2 (en) 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
TWI578565B (en) * 2013-09-17 2017-04-11 隆達電子股份有限公司 Light-emitting diodes
CN110071204A (en) * 2019-04-23 2019-07-30 南京邮电大学 Light emitting diode and preparation method thereof for transparent display screen
TW202137581A (en) * 2020-03-17 2021-10-01 晶元光電股份有限公司 Semiconductor light-emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130446A (en) * 1997-07-16 2000-10-10 Sanyo Electric Co., Ltd. Electrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the same
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US6130446A (en) * 1997-07-16 2000-10-10 Sanyo Electric Co., Ltd. Electrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the same

Also Published As

Publication number Publication date
AU2002303112A1 (en) 2002-09-19
WO2002071450A2 (en) 2002-09-12

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