WO2002063693A1 - Carbon nanotube electronic device and electron source - Google Patents

Carbon nanotube electronic device and electron source Download PDF

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Publication number
WO2002063693A1
WO2002063693A1 PCT/JP2001/000886 JP0100886W WO02063693A1 WO 2002063693 A1 WO2002063693 A1 WO 2002063693A1 JP 0100886 W JP0100886 W JP 0100886W WO 02063693 A1 WO02063693 A1 WO 02063693A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
electrodes
graphene sheets
tubular graphene
electronic device
Prior art date
Application number
PCT/JP2001/000886
Other languages
French (fr)
Japanese (ja)
Inventor
Tomihiro Hashizume
Masayoshi Ishibashi
Midori Kato
Seiji Heike
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to JP2002563538A priority Critical patent/JP4512176B2/en
Priority to PCT/JP2001/000886 priority patent/WO2002063693A1/en
Publication of WO2002063693A1 publication Critical patent/WO2002063693A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Abstract

An electronic device and an electron source comprising a multilayer carbon nanotube in which electrodes are so constituted as to be connected electrically with a large number of tubular graphene sheets among tubular graphene sheets of the multilayer carbon nanotube arranged concentrically or spirally. Ideally, the electrodes are connected electrically with all tubular graphene sheets. In order to decreas the contact resistance between the electrode and the tubular graphene sheets, the carbon nanotube is cut immediately before fabricating the electrode, or impurities between the electrodes and the tubular graphene sheets are removed and the electrodes are formed of a metal making strong chemical bond with a carbon atom. The contact resistance between the multilayer carbon nanotube and the electrodes can be decreased while decreasing the electrical resistance of the multilayer carbon nanotube.
PCT/JP2001/000886 2001-02-08 2001-02-08 Carbon nanotube electronic device and electron source WO2002063693A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002563538A JP4512176B2 (en) 2001-02-08 2001-02-08 Carbon nanotube electronic device and electron source
PCT/JP2001/000886 WO2002063693A1 (en) 2001-02-08 2001-02-08 Carbon nanotube electronic device and electron source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/000886 WO2002063693A1 (en) 2001-02-08 2001-02-08 Carbon nanotube electronic device and electron source

Publications (1)

Publication Number Publication Date
WO2002063693A1 true WO2002063693A1 (en) 2002-08-15

Family

ID=11737005

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/000886 WO2002063693A1 (en) 2001-02-08 2001-02-08 Carbon nanotube electronic device and electron source

Country Status (2)

Country Link
JP (1) JP4512176B2 (en)
WO (1) WO2002063693A1 (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146821A (en) * 2002-10-03 2004-05-20 Sony Corp Memory device and memory
WO2004100201A2 (en) * 2003-05-08 2004-11-18 University Of Surrey A cathode for an electron source
WO2004114428A2 (en) * 2003-06-25 2004-12-29 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and manufacturing method therof
JP2005039228A (en) * 2003-06-25 2005-02-10 Matsushita Electric Ind Co Ltd Electronic device, magneto-resistance effect element, magnetic head using magneto-resistance effect element, recording and reproducing device, memory device, memory array, manufacturing method for electronic device, and manufacturing method for magneto-resistance effect element
WO2005067059A1 (en) * 2003-12-26 2005-07-21 Fuji Xerox Co., Ltd. Rectifying device and electronic circuit employing same, and process for producing rectifying device
JP2005229019A (en) * 2004-02-16 2005-08-25 Univ Nagoya Electrode forming method for carbon nano-tube, and carbon nano-tube fet using same forming method
US6979244B2 (en) * 1997-10-30 2005-12-27 Canon Kabushiki Kaisha Method of manufacturing an electronic device containing a carbon nanotube
JP2006507692A (en) * 2002-09-30 2006-03-02 ナノシス・インコーポレイテッド Large area nano-capable macroelectronic substrate and its use
JP2006209973A (en) * 2005-01-25 2006-08-10 Shinshu Univ Field emission electrode and manufacturing method thereof
WO2006085559A1 (en) * 2005-02-10 2006-08-17 Matsushita Electric Industrial Co., Ltd. Structure for holding fine structure, semiconductor device, tft driving circuit, panel, display, sensor and their manufacturing methods
US7253431B2 (en) 2004-03-02 2007-08-07 International Business Machines Corporation Method and apparatus for solution processed doping of carbon nanotube
JPWO2006001162A1 (en) * 2004-06-25 2008-04-17 松下電器産業株式会社 Electromechanical filter
JP2009044139A (en) * 2007-07-13 2009-02-26 Hokkaido Univ Carbon nanotube field-effect transistor, and method for manufacturing the same
US7755115B2 (en) 2006-03-03 2010-07-13 Fujitsu Limited Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removed
US7764010B2 (en) 2005-10-04 2010-07-27 Samsung Sdi Co., Ltd. Electron emission device, electron emission display apparatus having the same, and method of manufacturing the same
US7790242B1 (en) 2007-10-09 2010-09-07 University Of Louisville Research Foundation, Inc. Method for electrostatic deposition of graphene on a substrate
JP2010225835A (en) * 2009-03-24 2010-10-07 Toshiba Corp Spin transistor and logic circuit device
CN102034845A (en) * 2010-10-30 2011-04-27 北京大学 Array of graphene-based nano-scale point sources
CN102082159A (en) * 2010-10-27 2011-06-01 北京大学 Nanoscale point light source based on graphene and preparation method thereof
WO2011083632A1 (en) * 2010-01-06 2011-07-14 Jsr株式会社 Memory cell and method for manufacturing memory cell
US8000065B2 (en) 2009-01-28 2011-08-16 Tdk Corporation Magnetoresistive element and thin-film magnetic head
US8029760B2 (en) 2006-03-30 2011-10-04 Fujitsu Limited Method of manufacturing carbon nanotube
US8193455B2 (en) 2008-12-30 2012-06-05 Hitachi Global Storage Technologies Netherlands B.V. Graphene electronics fabrication
JP2014078494A (en) * 2012-10-10 2014-05-01 Qinghua Univ Method for manufacturing field emission electron source and method for manufacturing field emission electron source array
JP2017017335A (en) * 2009-07-17 2017-01-19 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5972735B2 (en) 2012-09-21 2016-08-17 株式会社東芝 Semiconductor device

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH06252056A (en) * 1993-02-24 1994-09-09 Nec Corp Fixation of minute substance and formation of electrode
JPH07122198A (en) * 1993-10-25 1995-05-12 Nec Corp Carbon nanotube transistor
JPH07172807A (en) * 1993-12-21 1995-07-11 Nec Corp Working method of carbon nanotube
JP2000031465A (en) * 1998-06-16 2000-01-28 Lg Semicon Co Ltd Transistor
JP2000323767A (en) * 1999-05-10 2000-11-24 Hitachi Ltd Magneto-electronic device and magnetic head
JP2000340098A (en) * 1999-05-26 2000-12-08 Nec Corp Field emission type cold cathode, its manufacture, and manufacture of flat display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252056A (en) * 1993-02-24 1994-09-09 Nec Corp Fixation of minute substance and formation of electrode
JPH07122198A (en) * 1993-10-25 1995-05-12 Nec Corp Carbon nanotube transistor
JPH07172807A (en) * 1993-12-21 1995-07-11 Nec Corp Working method of carbon nanotube
JP2000031465A (en) * 1998-06-16 2000-01-28 Lg Semicon Co Ltd Transistor
JP2000323767A (en) * 1999-05-10 2000-11-24 Hitachi Ltd Magneto-electronic device and magnetic head
JP2000340098A (en) * 1999-05-26 2000-12-08 Nec Corp Field emission type cold cathode, its manufacture, and manufacture of flat display

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979244B2 (en) * 1997-10-30 2005-12-27 Canon Kabushiki Kaisha Method of manufacturing an electronic device containing a carbon nanotube
US8022610B2 (en) 1997-10-30 2011-09-20 Canon Kabushiki Kaisha Electronic device containing carbon nanotubes
US7453193B2 (en) 1997-10-30 2008-11-18 Canon Kabushiki Kaisha Electronic device containing a carbon nanotube
US7148619B2 (en) 1997-10-30 2006-12-12 Canon Kabushiki Kaisha Electronic device containing a carbon nanotube
JP2006507692A (en) * 2002-09-30 2006-03-02 ナノシス・インコーポレイテッド Large area nano-capable macroelectronic substrate and its use
JP2004146821A (en) * 2002-10-03 2004-05-20 Sony Corp Memory device and memory
WO2004100201A3 (en) * 2003-05-08 2005-03-24 Univ Surrey A cathode for an electron source
WO2004100201A2 (en) * 2003-05-08 2004-11-18 University Of Surrey A cathode for an electron source
WO2004114428A3 (en) * 2003-06-25 2006-01-26 Matsushita Electric Ind Co Ltd Magnetoresistance effect element and manufacturing method therof
JP2005039228A (en) * 2003-06-25 2005-02-10 Matsushita Electric Ind Co Ltd Electronic device, magneto-resistance effect element, magnetic head using magneto-resistance effect element, recording and reproducing device, memory device, memory array, manufacturing method for electronic device, and manufacturing method for magneto-resistance effect element
US7450348B2 (en) 2003-06-25 2008-11-11 Panasonic Corporation Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device
WO2004114428A2 (en) * 2003-06-25 2004-12-29 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and manufacturing method therof
WO2005067059A1 (en) * 2003-12-26 2005-07-21 Fuji Xerox Co., Ltd. Rectifying device and electronic circuit employing same, and process for producing rectifying device
JP2005229019A (en) * 2004-02-16 2005-08-25 Univ Nagoya Electrode forming method for carbon nano-tube, and carbon nano-tube fet using same forming method
US7253431B2 (en) 2004-03-02 2007-08-07 International Business Machines Corporation Method and apparatus for solution processed doping of carbon nanotube
EP1760882A4 (en) * 2004-06-25 2017-12-20 Panasonic Corporation Electromechanical filter
JPWO2006001162A1 (en) * 2004-06-25 2008-04-17 松下電器産業株式会社 Electromechanical filter
JP4633724B2 (en) * 2004-06-25 2011-02-16 パナソニック株式会社 Electromechanical filter
JP2006209973A (en) * 2005-01-25 2006-08-10 Shinshu Univ Field emission electrode and manufacturing method thereof
US7772125B2 (en) 2005-02-10 2010-08-10 Panasonic Corporation Structure in which cylindrical microstructure is maintained in anisotropic groove, method for fabricating the same, and semiconductor device, TFT driving circuit, panel, display and sensor using the structure in which cylindrical microstructure is maintained in anisotropic groove
WO2006085559A1 (en) * 2005-02-10 2006-08-17 Matsushita Electric Industrial Co., Ltd. Structure for holding fine structure, semiconductor device, tft driving circuit, panel, display, sensor and their manufacturing methods
CN1976869B (en) * 2005-02-10 2010-12-22 松下电器产业株式会社 Structure for holding fine structure, semiconductor device, TFT driving circuit, panel, display, sensor and their manufacturing methods
JP5127442B2 (en) * 2005-02-10 2013-01-23 パナソニック株式会社 Structure manufacturing method for holding fine structure, semiconductor device manufacturing method, and sensor manufacturing method
US7764010B2 (en) 2005-10-04 2010-07-27 Samsung Sdi Co., Ltd. Electron emission device, electron emission display apparatus having the same, and method of manufacturing the same
US7755115B2 (en) 2006-03-03 2010-07-13 Fujitsu Limited Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removed
US8029760B2 (en) 2006-03-30 2011-10-04 Fujitsu Limited Method of manufacturing carbon nanotube
JP2009044139A (en) * 2007-07-13 2009-02-26 Hokkaido Univ Carbon nanotube field-effect transistor, and method for manufacturing the same
US7790242B1 (en) 2007-10-09 2010-09-07 University Of Louisville Research Foundation, Inc. Method for electrostatic deposition of graphene on a substrate
US8650749B2 (en) 2008-12-30 2014-02-18 HGST Netherlands B.V. Method for manufacturing graphene electronics
US8193455B2 (en) 2008-12-30 2012-06-05 Hitachi Global Storage Technologies Netherlands B.V. Graphene electronics fabrication
US8000065B2 (en) 2009-01-28 2011-08-16 Tdk Corporation Magnetoresistive element and thin-film magnetic head
JP2010225835A (en) * 2009-03-24 2010-10-07 Toshiba Corp Spin transistor and logic circuit device
JP7150958B2 (en) 2009-07-17 2022-10-11 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP7408748B2 (en) 2009-07-17 2024-01-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor devices
JP2017017335A (en) * 2009-07-17 2017-01-19 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JP2022008355A (en) * 2009-07-17 2022-01-13 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
WO2011083632A1 (en) * 2010-01-06 2011-07-14 Jsr株式会社 Memory cell and method for manufacturing memory cell
CN102082159B (en) * 2010-10-27 2012-07-04 北京大学 Nanoscale point light source based on graphene and preparation method thereof
CN102082159A (en) * 2010-10-27 2011-06-01 北京大学 Nanoscale point light source based on graphene and preparation method thereof
CN102034845A (en) * 2010-10-30 2011-04-27 北京大学 Array of graphene-based nano-scale point sources
JP2014078494A (en) * 2012-10-10 2014-05-01 Qinghua Univ Method for manufacturing field emission electron source and method for manufacturing field emission electron source array

Also Published As

Publication number Publication date
JP4512176B2 (en) 2010-07-28
JPWO2002063693A1 (en) 2004-06-10

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