WO2002052060A1 - Reacteur a plasma a couplage inductif - Google Patents

Reacteur a plasma a couplage inductif Download PDF

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Publication number
WO2002052060A1
WO2002052060A1 PCT/US2001/049203 US0149203W WO02052060A1 WO 2002052060 A1 WO2002052060 A1 WO 2002052060A1 US 0149203 W US0149203 W US 0149203W WO 02052060 A1 WO02052060 A1 WO 02052060A1
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WIPO (PCT)
Prior art keywords
plasma
inductors
inductor
chamber
source
Prior art date
Application number
PCT/US2001/049203
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English (en)
Inventor
Valery Godyak
Yuri Trachuk
Original Assignee
Valery Godyak
Yuri Trachuk
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Filing date
Publication date
Application filed by Valery Godyak, Yuri Trachuk filed Critical Valery Godyak
Publication of WO2002052060A1 publication Critical patent/WO2002052060A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources

Definitions

  • the preset invention is related to a rf (radio frequency) plasma sources, also known as plasma reactors, driven by ferromagnetic core inductors, for variety of tasks in plasma processing technology (plasma etching, deposition, dissociating, abatement, plasma sterilization, ion implantation and so on) and having features of plasma uniformity self-control, over a large processing area.
  • rf radio frequency
  • RF inductive plasma reactors or inductively coupled plasma (ICP) sources
  • ICP inductively coupled plasma
  • Such sources are also used for generation of activated gases used for cleaning plasma-processing chambers and for incineration (abatement) of harmful plasma processing gases, [M. A. Lieberman and A. J. Lichtenberg, "Principles of Plasma Discharges and Materials Processing", John Wiley & Sons, Inc, New York, 1994].
  • a typical ICP for large area uniform plasma processing of 300 mm wafers and flat panel displays consists of a cylindrical metal chamber filled with working gas and having a flat quartz window between a flat inductor coil and plasma chamber housing a processed wafer.
  • the operation of this ICP (as any inductive discharge) is based on the principle of electromagnetic induction.
  • the rf current driven in the inductor coil induces electromagnetic rf field and rf plasma current in the chamber, thus maintaining a plasma discharge there.
  • any inductive rf discharge this ICP plasma source can be considered as an electrical transformer where the inductor coil connected to an rf source is an actual primary winding and the plasma is a single closed turn of a virtual secondary winding.
  • Another problem in the conventional ICP sources with a flat induction coil is a relatively large radial and azimuthal plasma non-uniformity.
  • the first is due to plasma diffusion to the wall and due to non-uniform radial distribution of rf electric field created by the coil.
  • the azimuthal plasma non-uniformity is caused by the transmission line effect along the coil conductor. This effect results in the coil cunent non-uniformity along the coil wire, thus leading to the plasma azimuthal non- uniformity.
  • the transmission line effect is an increasing problem for large rf plasma reactors when the coil wire length becomes comparable to the wave length of the working frequency.
  • RF plasma sources operating at standard frequency of 13.65 MHz require expensive rf power sources. As a rule, they also require complicated matching-tuning networks with expensive vacuum high-frequency variable capacitors and electromechanical drivers. Operation of such matchers requires simultaneous adjusting for matching and tuning function that additionally requires an incorporating of rf sensors and automatic control electronics. High costs of the components in rf plasma sources operating at 13.56 MHz make such system to be very expensive and encourage search for alternative solutions.
  • ICP source has a closed ferrite core immersed into a discharge chamber filled with a working gas.
  • the ferrite inductor induces rf electric field and rf discharge cunent path sunounding the magnetic path of the ferrite core, thus maintaining plasma in the discharge chamber.
  • the inductor is encapsulated into a metal jacket with air or water-cooling.
  • the objects of the present invention are:
  • the inductor cores may be coplanar and arranged side by side.
  • the chamber compartments are connected through the holes of the toroidal cores for closing the rf discharge current paths and passing flows of the working gas.
  • Plasma reactors of the invention utilize the general principle of inductive discharge where the discharge plasma itself forms a virtual single turn secondary winding.
  • the inductors When the inductors are energized via their primary windings, they induce rf electromotive forces (emf) having opposite directions in neighboring ferrite inductors, thus generating closed-path plasma currents flowing within the half- chambers through the holes of each of the toroidal core inductors.
  • emf rf electromotive forces
  • thermo- conductive inductor casing that is attached to the discharge chamber
  • a multiple-stage plasma source with two or more inductor casings dividing the plasma chamber into three or more compartments provides larger plasma volume (and thus, plasma reaction rate) than with a single inductor casing and two compartments, or can be used for diversifying plasma reactions in different compartments by supplying different rf power to different inductor casing and/or by having different gas mixtures in different compartments.
  • stacking different number of inductor casings (holders) and chamber compartments with programmable rf power supply to different inductor holder one can build plasma source able to process simultaneously several plasma-chemical reactions.
  • the primary windings of the ferrite core inductors are connected to an rf power-switching source via parallel resonant matching circuit (shown in Fig. 3) operating as a rf cunent source.
  • the primary winding and/or an additional starting winding wound on the same ferrite core is connected to the starting electrode.
  • a high voltage develops on the primary (or/and additional) winding of unloaded ferrite inductor and a large circular electromotive force (emf) develops across ferrite inductor.
  • emf electromotive force
  • a plurality of ferrite inductor pairs evenly distributed inside the inductor casing, induce multiple of the closed-path rf currents evenly distributed in both chamber compartments, thus providing an uniform plasma distribution along the both sides of the inductor casing and in both chamber compartments with processing wafer.
  • Generation of uniform plasma on the both sides of the inductor casing, in both chamber compartments, (allowing for two-side wafer processing) is an attractive feature of the proposed plasma source.
  • the plasma stabilization in the plasma reactor of the invention is achieved by electromagnetic coupling of neighboring inductors with common discharge cunent path, penetrating neighboring inductors, (cooperative operation) and by connection of the primary windings of inductors, in series to the rf power source. Due to strong coupling between the primary windings to plasma (provided by the high permeability of the fe ite core), the electrical resistance of any primary winding on associated ferrite inductor is proportional to the plasma resistance near the core. Therefore, although all discharge currents path in plasma (penetrating two or more neighboring inductors) flow in parallel, they are transformed to associated primary windings that are connected to the power source electrically in series.
  • Fig. 1 is a schematic cross-sectional view of the plasma reactor embodiment of the invention for volume plasma processing, in the plane of the plasma discharge path;
  • Fig. 2 is a three-dimensional view of such apparatus for volume plasma processing, according to the Fig. 1 embodiment, with a part removed for illustrating the interior of the plasma source;
  • Fig. 3 is the electrical circuit illustrating electrical connections of the inductors, resonant-matching circuit and RF power supply for the plasma source of the Fig. 1 embodiment;
  • Fig. 4 is a three-dimensional view of a further, multiple-stage plasma source embodiment with two inductor casings and three chamber compartments having cylindrical cross sections;
  • Fig. 5 is a schematic sectional view of another embodiment of the invention with the bottom chamber compartment functioning as a plasma processing chamber with a semiconductor wafer being processed;
  • Fig. 6 is a schematic sectional view of another embodiment plasma source of the invention with the bottom chamber compartment containing an ion extraction- acceleration structure;
  • Fig. 7 is a multi-inductor plasma source for uniform surface processing
  • Fig. 7a is a schematic cross-sectional view
  • Fig. 7b is a schematic plan view of the multi-inductor casing of the plasma source
  • Fig. 8 is a plan view of the 18-inductor circular casing having two groups of inductors and showing primary winding connection;
  • Fig. 9 is a plan view of a circular casing with 6 peripheral inductors and an additional central inductor to provide radial component of the discharge cunent;
  • Fig. 10 is an embodiment of the invention as a linear plasma source with an ion extraction and acceleration means
  • Fig. 11 is a sectional view of a linear plasma source with a strip inductor casing partially dividing the discharge chamber
  • Fig. 11a shows the direction of the discharge cunent paths for inductors operating in cooperative mode
  • Fig. lib shows the direction of the discharge cunent paths for inductors operating in individual mode
  • Fig. 12 is a sectional view of a plasma source for uniform plasma surface processing, having multiple of strip inductor casings;
  • Fig 13 is two side sectional views of a plasma source having a casing with a single fenomagnetic inductor
  • Fig. 13a is a view in the plane of discharge cunent path P (shown by anow);
  • Fig. 13b is a view in the plane normal to discharge cunent path.
  • Fig. 14 is a large-scale inductive plasma source with a rotating discharge path, thereby able to operate from an industrial 3-phase ac power line;
  • Fig. 14a is a cross-sectional view of the source
  • Fig. 14b is a plan view of the three-inductor casing showing connection of the primary windings to a 3-phase ac power line.
  • FIG. 1 A schematic cross-sectional view of a basic embodiment of plasma reactor of the invention, is shown in Fig. 1 in the plane of the plasma discharge path P.
  • the plasma source which as a whole is designated by reference numeral 200, consists of a sealed vacuum chamber 202 divided by a flat inductor casing 204 with encapsulated toroidal fenomagnetic inductors 206 and 208.
  • the inductors (that may be of ferrite material) are coplanar to each other and consist of a closed toroidal ferromagnetic (fenite) cores and primary winding connected (directly or via LC circuit) to a RF power source (not shown here).
  • the inductor casing may contain more than two fenOmagnetic inductors.
  • the inductors are hermetically sealed in the casing 204 with dielectric tubes 212 and 214 via elastomer gaskets 216-219.
  • the dielectric insertion tubes 212 are and 214 needed to prevent the shortening the RF voltage induced by the inductors 206 and 208.
  • the casing 204 is formed of two parts 204a and 204b between which the toroidal inductors 206 and 208 are sandwiched with elastic thermo-conductive layers (such as rubber, resin or soft ceramic-based pads, not shown here).
  • the chamber has a gas inlet 222 and an outlet 223 for flowing of the working gas mixture.
  • the inductor casing 204 made of metal (such as aluminum) or a dielectric with high thermoconductivity, provides an effective heat transfer from fenomagnetic inductors 206 and 208 to the casing age and the chamber flanges. From there the heat is removed with a standard cooling means. For shown in Fig. 1 a rectangular chamber, the cooling of the inductor casing (and thus, encapsulated inductors) is provided by water flowing through hollow channels penetrating the casing (not shown here).
  • the chamber shape may be rectangular, cylindrical or any desirable shape and chamber compartments and inductor casing may be made of conductive or dielectric material, depending on the specific application of the plasma source.
  • Fig. 2 shows a three-dimensional view of a rectangular plasma source of Fig 1, with a part removed for illustrating the interior of the source. This view illustrate the position of the second toroidal inductor 208, which is shown by broken circular line, and hollow channels 224 and 225 for water cooling. Openings in the chamber flanges 210a, 210b, 210c are intended for bolting the half -chambers 202a and 202b with both parts of the casing 204a and 204b.
  • Fig. 3 shows electrical connections for the components of the plasma reactor of the invention.
  • Each primary winding 226 and 228 of the respective inductors 206 and 208 are connected to a square wave RF power switching source 240 via a matching parallel resonant circuit 242 consisting of an inductor L and capacitor C.
  • the windings 226 and 228 of adjacent inductors 206 and 208 are electrically connected in parallel with one end of each winding connected to the matching circuit 242, and other end connected to the common ground point as it shown in Fig. 3.
  • the values of the capacitor C and the inductor L of the matching circuit 242 are chosen to operate at nearly resonant condition at the power source frequency, f ⁇ (2 ⁇ LC) _1 .
  • the resonant matching circuit 242 is essential part of the plasma source of the invention performing several important functions. It matches the impedance of the primary windings 226 and 228 of the plasma source to the low output impedance of the rf power source 240. Plasma load (and that transformed to the primary windings) has a typically negative current-voltage characteristic, and for stable discharge operation, the desirable matching condition requires that output impedance of the matching circuit 242 to be larger than the resistance of the primary winding loaded with plasma. Shown in Fig. 3 the L-C matching circuit effectively ballasts the plasma source, making rf generator working as a current source. Energizing the inductors by the cunent source prevents the plasma distinguishing in the case of significant drop in the line voltage and/or changing in gas pressure.
  • L-C matching circuit 242 effectively filters out higher harmonics from square wave form generated by the rf source, resulting in cosine rf voltage on the primary winding. Filtering of high harmonics reduces power loss in the ferrite inductors and reduces electromagnetic interference produced by both, rf plasma source and rf power source, since inductor L connected to the output transistors of the rf power source 240 provides a "soft" switching mode.
  • the unloaded resonant matching circuit 242 provides resonant over voltage on the primary windings connected (directly or with additional starting windings 244 and 246) to the starting ring electrodes 248 and 250 (placed on external surface of the dielectric tubes 212 and 214) to make break-down of the working gas and transition to inductive (operational) mode, enhanced by simultaneous jump in inductive rf field along the circular discharge path.
  • the fenite inductors that maintain plasma discharge in the steady state
  • the matching L-C circuit provide a self-starting feature of the plasma source of the invention, without a separate additional starting means in the prior art (for example, as in US Patent 6,150,628).
  • the discharge current path (designated as P in the Fig. 1 embodiment of the invention) has four parts that have different lengths and cross sections. Two short parts having relatively small cross sections are within the dielectric insertions tubes 212 and 214 and two relatively long parts with essentially larger cross sections are within the two compartments of the discharge chamber 202a and 202b. According to the basic property of gas discharge plasma, the electric field needed to maintain a steady state discharge, is smaller for a larger discharge cross section.
  • the increase in the discharge cross section of the longest part of the discharge path (in the chamber compartments) results in reduction of the discharge voltage (emf) comparing to that in devices of the prior art [US Patents 4,431,898; 5,290,382; and 6,150,628] teaching a constant discharge cross section limited by a thin toroidal chamber able to penetrate ferrite core transformer. Since ferrite loss is a sharp function of the induced by fenite inductor emf, the reduction of the discharge voltage significantly reduces ferrite core losses or/and reduces the amount of the ferrite material needed to maintain the discharge plasma.
  • the plasma source of the invention has much more total plasma electrons participated in chemical reactions and, thus, has much higher plasma reaction productivity per unit of rf power and per ferrite core size than the volume plasma processing devices of the prior art [US Patents, 4,431,898; 5,290,382; and 6,150,628] teaching thin toroidal discharge chambers.
  • the fenite core inductors in the plasma source of the present invention are surrounded by the discharge chamber compartments and the total volume of the discharge chamber filed with plasma is nearly equal to the exterior size of the whole device.
  • Increase in the inner chamber surface area leads to reduction of the chamber wall loading by plasma and by active species, resulting in increasing its durability and in simplification of the chamber cooling.
  • Fig. 4 shows a multiple-stage plasma source with two or more inductor casings dividing the plasma chamber on three or more compartments that can be built according to present invention.
  • three-chamber compartment (202a, 252 and 202b) with two identical inductor casings 204 and 205 are shown in Fig. 4.
  • Such device can provide a larger plasma volume and thus, larger the reaction rate comparing to a single inductor casing and two compartments, or/and allows for multi-stage diversified plasma reactions in different compartments by supplying different rf power to each inductor casings or/and by having different gas mixture in each compartments.
  • Fig. 5 shows a plasma reactor embodiment of the invention, in which the lower chamber compartment 202b has on the bottom the plasma-processing wafer 265.
  • this plasma source can be used as an ion source when an ion extraction-acceleration structure 254 is attached to the bottom of the second chamber compartment (202b), as it shown in Fig 6.
  • Fig. 7 is a schematic diagram of another embodiment of the invention suitable for large surface uniform plasma processing of large wafers and display panels.
  • This plasma source utilizes the plasma uniformity self-control feature of the present invention (discussed above) in an array of the ferrite inductors built into a flat inductor casing.
  • Fig. 7a shows a cross sectional view plasma reactor and Fig. 7b shows a plan view of the open inductor casing with six inductors 262a, 262b, 262c and so on, and having their associated primary windings connected in series.
  • the plasma source shown in Fig. 7a consists of two chamber compartments 202a and 202b with low aspect ratio (height to diameter), divided the inductor casing that consist of two parts 204a and 204b and encapsulates plurality of ferrite core inductors 262a, 262b, 262c and so on.
  • Each of compartments 202a and 202b may have a processing wafer 265a and 265b with conesponding chucks 268a and 268b.
  • the primary windings 266a, 266b, 266c and so on, of all inductors are connected in series to the power source (not shown here) via a matching L-C circuit shown in Fig. 3.
  • the winding connection and their arrangement on the inductor cores are made in such a way, that direction of emf in neighboring inductors are opposite, thus providing common circular, closed path discharge cunents penetrating neighboring toroidal inductors.
  • the directions of the discharge cunent paths in the plan of inductor casing with six inductors (for some fixed moment of time) are shown in Fig. 7b by the arrows. Since discharge cunents oscillate with RF frequency, the direction of the discharge paths in the next half period would be opposite to that shown in Fig. 7b.
  • the structure and way of operation of the invented plasma source with interactive ferrite inductors is essentially differs from fenite inductor array of the prior art (US Patent 5,998,933) where there is no a flat inductor casing effectively cooling ferrite inductors and spreading the plasma over a large surface area.
  • discharge current goes, in the shortest current path, around of each individual fenite inductor, (individual operating mode) without spreading the discharge cunent paths over area in the plan of the inductor anay.
  • the inductor array described in US Patent 5,998,933 has no interaction between inductors and there is no means that could maintain the stable and uniform operation of each of inductors.
  • the inductors can be ananged in azimuthal (as shown in Fig. 7b), in square and in hexagonal symmetry or in any desirable configuration, depending of chamber and processing wafer geometry.
  • the inductors can be arranged in few groups (as it shown in Fig. 8) with primary windings in each group connected in series, while having separate terminals for each groups (A and B).
  • the inductor groups can be connected to rf power source in series, or/and in the way providing control of the rf power ratio delivered to each group of inductors, thus to control plasma density distribution in the radial direction.
  • the inductors in each group should be of the same geometry, ferrite material and number of turns of the primary winding, although they could be different in different groups.
  • the last peripheral group of the inductors may have some larger number of turns of their primary windings than those in inner circle groups. That would lead to a, larger rf power deposition per inductor and to enhanced ionization on the peripheral plasma, thus to compensate the natural plasma density depletion near the chamber wall.
  • Arranging different power (or different rf cunent) in the to each concentric group of inductors one can control the plasma spatial distribution in the source of the invention.
  • the rf current driving the central inductor is about 90 degree shifted reference to the current in the rest of inductors.
  • the phase shift of the central inductor is achieved by connection its primary winding to rf power source via variable capacitor 270 that allows for adjusting of the plasma uniformity in the center of the chamber. Being 90 degree shifted, the cunent induced by the central inductor does not interfere with discharge current of the sunounding inductor groups.
  • Fig. 10 shows a linear plasma source, designed according to present invention, with all inductors placed along strait line.
  • Such an embodiment of the invention allows for construction of linear ion source when an ion extraction and accelerating means 254 are installed at the open end of the chamber compartment 202b.
  • Another embodiment of the present invention utilizing flat inductor casing encapsulating plurality of the inductors, as a linear plasma source, is shown in Fig. 11.
  • the casing 205 with inductors is attached to the bottom of a narrow rectangular chamber 203, leaving a gap between the casing and open end of the chamber.
  • Different way of discharge cunent path shown in Fig.
  • each inductor When the electromotive forces induced by the neighboring inductors encapsulated in the strip casing have the same directions, the discharge current path through each inductor flows in direction normal to the inductor casing as it is shown in Fig. lib by arrows.
  • each inductor operates individually, having its induced discharge cunent penetrating only the very same inductor.
  • the discharge current also penetrates the gap near chamber opening, enhancing plasma density there.
  • Fig. 12 is a schematic diagram of another embodiment of the invention suitable for large surface uniform plasma processing of large wafers and display panels.
  • This plasma source utilizes two or more strip inductor casings 205a, 205b, 205c, 205d (similar to those shown in Figs. 11a and lib) installed in the chamber 203a with a processed wafer 265a.
  • the plasma uniformity self-control feature in this plasma source is provided by the series connection of the primary windings of all casings to a power source, as was discussed above.
  • the plasma source of the invention having of inductor casing partially dividing the discharge chamber 203b (similarly to those shown in Figs. 11 and 12) can be made with a plurality of casings, each of them having just one fenomagnetic inductor.
  • a similar plasma sources can be made using just one ferromagnetic inductor encapsulated into casing 205 adjusted to the inner surface of the discharge chamber 203b as it shown in Fig 13.
  • plasma sources of the invention with a flat inductor casing can have size from few cm up to few meters and operate at rf or ac power from tens W to many kW.
  • These sources can effectively operate in a wide range of gas pressure (from fraction of mTon to tens of Ton) and frequency range from tens of Hz to few MHz.
  • FIG. 14a and 14b Another embodiment of the present invention (shown in Figs. 14a and 14b) is an inductive plasma source able to operate at extremely low frequency. Having three inductors made of transformer steel, symmetrically built into a flat inductor casing and with their primary windings connected to a 3-ac power source, a continuous rotating plasma can be maintained in both chamber compartments. With 3-phase power source, the phase of the current flowing through each two inductors is shifted 120-degrees. Therefore, the total discharge current in this source at any moment is not zero. The discharge current flowing through the inductor casing and in both chamber compartments is the sum of 120-degrees shifted currents, resulting in wave of rotating current in the plane parallel to the inductor casing.
  • the frequency of rotation is equal to the frequency of the power source.
  • the absence of the zero- crossing in the total discharge current in this plasma source make it possible to use very low frequency to maintain discharge.
  • a conventional (single-phase) inductive discharge is impossible to maintain continuously at frequency essentially lower than characteristic frequency of plasma relaxation, due to discharge extinguishing at the zero crossing of the discharge cunent.
  • This plasma source is able to generate plasma in an extra-large volume using very low frequency, up to industrial range of 400; 60 and 50 Hz, from industrial ac power line (directly or via some ballasting and controlling means) with no need of RF power converter (generator). That significantly simplifies plasma production and reduces cost of the large volume plasma source for abatement, sterilization, ion implantation and similar applications.
  • ferrite cores and discharge chamber may have shapes different from those shown in the drawings and can be square, oval, round, etc.
  • each inductor can be made of few ferrite cores divided by heat removing metal plates and stacked onto each other.
  • the chambers and casings can be made of different materials, e.g., from thermo conductive ceramics. Different cooling anangements and different sealing means could be used to build the plasma source.
  • planar inductor casing can be designed with different number of fenite core or transformer steel inductor cores, and even with a single inductor. In the later case, an additional opening in the inductor casing or a gap between the casing and chamber is needed for a discharge cunent flow.
  • the proposed plasma sources can be also used as an autonomous source of plasma for variety of applications.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne une source de plasma à couplage inductif reliée à au moins une série de sections de chambre (202a, 202b) divisées (complètement ou partiellement) par une gaine plate (204a, 204b) comportant des bobines d'induction (206, 208) ferromagnétiques toriques, le courant de décharge induit passant entre les sous-chambres divisées en boucles fermées par des passages dans lesdites bobines d'induction (206, 208). La chambre est dotée d'une admission de gaz (222) et d'une sortie (223) pour l'écoulement du mélange gazeux actif.
PCT/US2001/049203 2000-12-26 2001-12-21 Reacteur a plasma a couplage inductif WO2002052060A1 (fr)

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US60/257,786 2000-12-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018056074A (ja) * 2016-09-30 2018-04-05 株式会社ダイヘン プラズマ発生装置
WO2020014030A1 (fr) 2018-07-13 2020-01-16 Mks Instruments, Inc. Source de plasma ayant une chambre à plasma diélectrique à résistance au plasma améliorée

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435881A (en) * 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6204607B1 (en) * 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435881A (en) * 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
US6204607B1 (en) * 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018056074A (ja) * 2016-09-30 2018-04-05 株式会社ダイヘン プラズマ発生装置
WO2020014030A1 (fr) 2018-07-13 2020-01-16 Mks Instruments, Inc. Source de plasma ayant une chambre à plasma diélectrique à résistance au plasma améliorée
EP3821454A4 (fr) * 2018-07-13 2022-03-30 MKS Instruments, Inc. Source de plasma ayant une chambre à plasma diélectrique à résistance au plasma améliorée

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