WO2002043116A3 - Etching of high aspect ratio features in a substrate - Google Patents
Etching of high aspect ratio features in a substrate Download PDFInfo
- Publication number
- WO2002043116A3 WO2002043116A3 PCT/US2001/046210 US0146210W WO0243116A3 WO 2002043116 A3 WO2002043116 A3 WO 2002043116A3 US 0146210 W US0146210 W US 0146210W WO 0243116 A3 WO0243116 A3 WO 0243116A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- etching
- aspect ratio
- high aspect
- ratio features
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3347—Problems associated with etching bottom of holes or trenches
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002544762A JP2004529486A (en) | 2000-11-01 | 2001-11-01 | Apparatus and method for etching features having a high aspect ratio on a substrate |
EP01987258A EP1330839A2 (en) | 2000-11-01 | 2001-11-01 | Etching of high aspect ratio features in a substrate |
KR10-2003-7006046A KR20030051765A (en) | 2000-11-01 | 2001-11-01 | Etching of high aspect ratio features in a substrate |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70525400A | 2000-11-01 | 2000-11-01 | |
US70488700A | 2000-11-01 | 2000-11-01 | |
US09/704,887 | 2000-11-01 | ||
US09/705,254 | 2000-11-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002043116A2 WO2002043116A2 (en) | 2002-05-30 |
WO2002043116A3 true WO2002043116A3 (en) | 2003-05-01 |
Family
ID=27107399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/046210 WO2002043116A2 (en) | 2000-11-01 | 2001-11-01 | Etching of high aspect ratio features in a substrate |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1330839A2 (en) |
JP (1) | JP2004529486A (en) |
KR (1) | KR20030051765A (en) |
CN (1) | CN1471727A (en) |
WO (1) | WO2002043116A2 (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
WO2009117612A2 (en) * | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Shielded lid heater assembly |
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
ES2513866T3 (en) | 2009-05-13 | 2014-10-27 | Sio2 Medical Products, Inc. | Container coating and inspection |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US10595365B2 (en) | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
US8920599B2 (en) | 2010-10-19 | 2014-12-30 | Applied Materials, Inc. | High efficiency gas dissociation in inductively coupled plasma reactor with improved uniformity |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
JP6095678B2 (en) | 2011-11-11 | 2017-03-15 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | Passivation, pH protection or slippery coatings for pharmaceutical packages, coating processes and equipment |
WO2014071061A1 (en) | 2012-11-01 | 2014-05-08 | Sio2 Medical Products, Inc. | Coating inspection method |
EP2920567B1 (en) | 2012-11-16 | 2020-08-19 | SiO2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
EP2971228B1 (en) | 2013-03-11 | 2023-06-21 | Si02 Medical Products, Inc. | Coated packaging |
US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
CN116982977A (en) | 2015-08-18 | 2023-11-03 | Sio2医药产品公司 | Medicaments and other packages with low oxygen transmission rate |
KR102576706B1 (en) * | 2016-04-15 | 2023-09-08 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
US10714329B2 (en) * | 2018-09-28 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-clean for contacts |
CN110233102B (en) * | 2019-06-18 | 2021-01-29 | 北京北方华创微电子装备有限公司 | Etching method |
CN111048466B (en) * | 2019-12-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Wafer clamping device |
US11551951B2 (en) * | 2020-05-05 | 2023-01-10 | Applied Materials, Inc. | Methods and systems for temperature control for a substrate |
JP2023034881A (en) * | 2021-08-31 | 2023-03-13 | 株式会社ニューフレアテクノロジー | Discharge detection device and charged particle beam irradiation device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0553961A2 (en) * | 1992-01-29 | 1993-08-04 | Applied Materials, Inc. | Reactive ion etch process including hydrogen radicals |
WO1997047783A1 (en) * | 1996-06-14 | 1997-12-18 | The Research Foundation Of State University Of New York | Methodology and apparatus for in-situ doping of aluminum coatings |
-
2001
- 2001-11-01 KR KR10-2003-7006046A patent/KR20030051765A/en not_active Application Discontinuation
- 2001-11-01 EP EP01987258A patent/EP1330839A2/en not_active Withdrawn
- 2001-11-01 CN CNA018179584A patent/CN1471727A/en active Pending
- 2001-11-01 WO PCT/US2001/046210 patent/WO2002043116A2/en not_active Application Discontinuation
- 2001-11-01 JP JP2002544762A patent/JP2004529486A/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0553961A2 (en) * | 1992-01-29 | 1993-08-04 | Applied Materials, Inc. | Reactive ion etch process including hydrogen radicals |
WO1997047783A1 (en) * | 1996-06-14 | 1997-12-18 | The Research Foundation Of State University Of New York | Methodology and apparatus for in-situ doping of aluminum coatings |
Also Published As
Publication number | Publication date |
---|---|
WO2002043116A2 (en) | 2002-05-30 |
EP1330839A2 (en) | 2003-07-30 |
KR20030051765A (en) | 2003-06-25 |
CN1471727A (en) | 2004-01-28 |
JP2004529486A (en) | 2004-09-24 |
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