WO2002019485A8 - Quantum cascade laser - Google Patents

Quantum cascade laser

Info

Publication number
WO2002019485A8
WO2002019485A8 PCT/CH2001/000522 CH0100522W WO0219485A8 WO 2002019485 A8 WO2002019485 A8 WO 2002019485A8 CH 0100522 W CH0100522 W CH 0100522W WO 0219485 A8 WO0219485 A8 WO 0219485A8
Authority
WO
WIPO (PCT)
Prior art keywords
subband
barriers
strata
adjacent
layers
Prior art date
Application number
PCT/CH2001/000522
Other languages
French (fr)
Other versions
WO2002019485A1 (en
Inventor
Jerome Faist
Mattias Beck
Antoine Muller
Original Assignee
Alpes Lasers S A
Jerome Faist
Mattias Beck
Antoine Muller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpes Lasers S A, Jerome Faist, Mattias Beck, Antoine Muller filed Critical Alpes Lasers S A
Priority to JP2002524272A priority Critical patent/JP4790201B2/en
Priority to EP01960039A priority patent/EP1314229B1/en
Priority to DE60109179T priority patent/DE60109179T2/en
Priority to US10/363,093 priority patent/US6922427B2/en
Publication of WO2002019485A1 publication Critical patent/WO2002019485A1/en
Publication of WO2002019485A8 publication Critical patent/WO2002019485A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention concerns a quantum cascade laser comprising in particular a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each an AllnAs quantum barrier and strata of a second type (28) defining each an InGaAs quantum barrier, and injection barriers (22), interposed between two of the layers (20). The layers of the gain region (14) form each an active zone extending from one to the other of the injection barriers (22) adjacent thereto. The strata (26, 28) are dimensioned such that: each of the wells comprises, in the presence of an electric field, at least a first upper subband, a second median subband, and a third lower subband, and the probability of an electron being present in the first subband is highest in the proximity of one of the adjacent injection barriers, in the second subband in the median part of the zone and in the third subband in the proximity of the other adjacent barriers. The laser is formed by a succession of active zones and injection barriers, without interposition of a relaxation zone.
PCT/CH2001/000522 2000-08-31 2001-08-28 Quantum cascade laser WO2002019485A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002524272A JP4790201B2 (en) 2000-08-31 2001-08-28 Quantum cascade laser
EP01960039A EP1314229B1 (en) 2000-08-31 2001-08-28 Quantum cascade laser
DE60109179T DE60109179T2 (en) 2000-08-31 2001-08-28 QUANTUM CASCADED LASER
US10/363,093 US6922427B2 (en) 2000-08-31 2001-08-28 Quantum cascade laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00810783.1 2000-08-31
EP00810783A EP1195865A1 (en) 2000-08-31 2000-08-31 Quantum cascade laser

Publications (2)

Publication Number Publication Date
WO2002019485A1 WO2002019485A1 (en) 2002-03-07
WO2002019485A8 true WO2002019485A8 (en) 2002-07-18

Family

ID=8174883

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2001/000522 WO2002019485A1 (en) 2000-08-31 2001-08-28 Quantum cascade laser

Country Status (5)

Country Link
US (1) US6922427B2 (en)
EP (2) EP1195865A1 (en)
JP (1) JP4790201B2 (en)
DE (1) DE60109179T2 (en)
WO (1) WO2002019485A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1283571B1 (en) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser with weakly coupled grating
DE10143956A1 (en) * 2001-09-07 2003-04-03 Fraunhofer Ges Forschung Quantum Cascade Lasers
EP1343232B1 (en) 2002-03-08 2007-05-02 nanoplus GmbH Nanosystems and Technologies A semiconductor laser array with a lattice structure
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
US7349456B2 (en) * 2005-10-07 2008-03-25 Agilent Technologies, Inc. Gain-coupled distributed quantum cascade laser
EP1933177A1 (en) 2006-12-11 2008-06-18 Alpes Lasers S.A. Quantum cascade laser amplifier having an antireflection coating comprising an yttrium fluoride layer
JP5641667B2 (en) 2007-01-18 2014-12-17 浜松ホトニクス株式会社 Quantum cascade laser
JP5248881B2 (en) * 2008-02-28 2013-07-31 浜松ホトニクス株式会社 Quantum cascade laser
US20120207186A1 (en) * 2009-02-16 2012-08-16 The Board Of Regents Of The University Of Texas System Terahertz quantum cascade lasers (qcls)
JP2010238711A (en) * 2009-03-30 2010-10-21 Furukawa Electric Co Ltd:The Quantum-cascade laser
JP2011035138A (en) * 2009-07-31 2011-02-17 Hamamatsu Photonics Kk Semiconductor light emitting device
JP5523759B2 (en) 2009-07-31 2014-06-18 浜松ホトニクス株式会社 Quantum cascade laser
US8121164B1 (en) 2009-12-22 2012-02-21 Pranalytica, Inc. Quantum cascade laser: bias-neutral design
JP2011243781A (en) 2010-05-19 2011-12-01 Hamamatsu Photonics Kk Quantum cascade laser
JP5771120B2 (en) 2011-10-28 2015-08-26 浜松ホトニクス株式会社 Manufacturing method of quantum cascade laser
JP5941655B2 (en) 2011-10-28 2016-06-29 浜松ホトニクス株式会社 Quantum cascade laser
US9608408B2 (en) 2012-09-26 2017-03-28 Pranalytica, Inc. Long wavelength quantum cascade lasers based on high strain composition

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5570386A (en) * 1994-04-04 1996-10-29 Lucent Technologies Inc. Semiconductor laser
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
JP3132433B2 (en) * 1997-09-11 2001-02-05 日本電気株式会社 Method for manufacturing disordered crystal structure, method for manufacturing semiconductor laser, and method for manufacturing semiconductor laser with window structure
US6023482A (en) * 1998-01-23 2000-02-08 Lucent Technologies Inc. Article comprising a strain-compensated QC laser
US6137817A (en) * 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
US6055254A (en) * 1998-09-23 2000-04-25 Lucent Technologies Inc. Quantum cascade light emitter with pre-biased internal electronic potential
FR2787246B1 (en) 1998-12-09 2001-02-23 Alpes Lasers SEMICONDUCTOR TYPE LASER
FR2791477B1 (en) 1999-03-25 2001-06-29 Alpes Lasers INFRARED SEMICONDUCTOR LASER
EP1189317A1 (en) * 2000-09-13 2002-03-20 Alpes Lasers SA Quantum cascade Laser with optical phonon excitation
US6795467B2 (en) * 2001-04-04 2004-09-21 Lucent Technologies Inc. Technique for measuring intersubband electroluminescence in a quantum cascade laser
US6760354B2 (en) * 2002-03-12 2004-07-06 Lucent Technologies Inc. Intersubband light emitters with injection/relaxation regions doped to different levels
US6816530B2 (en) * 2002-09-30 2004-11-09 Lucent Technologies Inc. Nonlinear semiconductor light sources

Also Published As

Publication number Publication date
JP4790201B2 (en) 2011-10-12
DE60109179D1 (en) 2005-04-07
DE60109179T2 (en) 2006-02-16
EP1314229A1 (en) 2003-05-28
JP2004507903A (en) 2004-03-11
WO2002019485A1 (en) 2002-03-07
US20040013145A1 (en) 2004-01-22
EP1195865A1 (en) 2002-04-10
US6922427B2 (en) 2005-07-26
EP1314229B1 (en) 2005-03-02

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