WO2002003514A3 - Power and wavelength control of sampled grating distributed bragg reflector lasers - Google Patents

Power and wavelength control of sampled grating distributed bragg reflector lasers Download PDF

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Publication number
WO2002003514A3
WO2002003514A3 PCT/US2001/020725 US0120725W WO0203514A3 WO 2002003514 A3 WO2002003514 A3 WO 2002003514A3 US 0120725 W US0120725 W US 0120725W WO 0203514 A3 WO0203514 A3 WO 0203514A3
Authority
WO
WIPO (PCT)
Prior art keywords
power
laser
bragg reflector
distributed bragg
sampled grating
Prior art date
Application number
PCT/US2001/020725
Other languages
French (fr)
Other versions
WO2002003514A2 (en
Inventor
Paul F Crowder
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Priority to AU2001273072A priority Critical patent/AU2001273072A1/en
Publication of WO2002003514A2 publication Critical patent/WO2002003514A2/en
Publication of WO2002003514A3 publication Critical patent/WO2002003514A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

The invention discloses an optical output power and output wavelength control system for use with a sampled grating distributed Bragg reflector (SGDBR) laser. The optical output power and output wavelength control system for use with a sampled grating distributed Bragg reflector (SGDBR) laser comprises a controller for providing current inputs to the laser controlling the optical output power and output wavelength and an external reference receiving an optical output from the laser and providing a reference output to the control, wherein the controller compares the optical output power and output wavelength of the laser to the reference output and locks the optical output power and output wavelength of the laser to the external reference.
PCT/US2001/020725 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers WO2002003514A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001273072A AU2001273072A1 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US21517000P 2000-06-29 2000-06-29
US21574200P 2000-06-29 2000-06-29
US21573900P 2000-06-29 2000-06-29
US60/215,170 2000-06-29
US60/215,739 2000-06-29
US60/215,742 2000-06-29

Publications (2)

Publication Number Publication Date
WO2002003514A2 WO2002003514A2 (en) 2002-01-10
WO2002003514A3 true WO2002003514A3 (en) 2002-04-18

Family

ID=27396084

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2001/020726 WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers
PCT/US2001/020725 WO2002003514A2 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020726 WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Country Status (2)

Country Link
AU (2) AU2001273073A1 (en)
WO (2) WO2002003515A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN108011294A (en) * 2017-12-30 2018-05-08 武汉理工光科股份有限公司 Pulsed swept light source and production method based on semiconductor tunable laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0774684A2 (en) * 1995-11-16 1997-05-21 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
EP0926789A2 (en) * 1997-12-24 1999-06-30 Nortel Networks Corporation A laser module allowing simultaneous wavelength and power control
WO1999040654A1 (en) * 1998-01-21 1999-08-12 Altitun Ab Method of optimizing the operation points of lasers and means for carrying out the method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622672A (en) * 1984-01-20 1986-11-11 At&T Bell Laboratories Self-stabilized semiconductor lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0774684A2 (en) * 1995-11-16 1997-05-21 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
EP0926789A2 (en) * 1997-12-24 1999-06-30 Nortel Networks Corporation A laser module allowing simultaneous wavelength and power control
WO1999040654A1 (en) * 1998-01-21 1999-08-12 Altitun Ab Method of optimizing the operation points of lasers and means for carrying out the method

Also Published As

Publication number Publication date
AU2001273073A1 (en) 2002-01-14
WO2002003515A3 (en) 2002-04-18
WO2002003514A2 (en) 2002-01-10
AU2001273072A1 (en) 2002-01-14
WO2002003515A2 (en) 2002-01-10

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