WO2002003043A1 - Capteur de pression de type capacite et son procede de fabrication - Google Patents
Capteur de pression de type capacite et son procede de fabrication Download PDFInfo
- Publication number
- WO2002003043A1 WO2002003043A1 PCT/JP2001/005751 JP0105751W WO0203043A1 WO 2002003043 A1 WO2002003043 A1 WO 2002003043A1 JP 0105751 W JP0105751 W JP 0105751W WO 0203043 A1 WO0203043 A1 WO 0203043A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- pressure
- pressure sensor
- plate electrode
- electrode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 91
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 11
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
- G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
- G01D5/2417—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying separation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/01—Details
- H01G5/014—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
Definitions
- the present invention relates to a capacitive pressure sensor for detecting a change in capacitance (change in distance between electrodes) based on deformation of a capacitance chamber caused by external pressure application, and a method of manufacturing the same.
- a capacitive pressure sensor In a conventional general capacitive pressure sensor, two electrodes facing each other are arranged in a capacitive chamber surrounded by a flexible diaphragm and a base. In such a configuration, a change in the distance between the electrodes due to elastic deformation of the diaphragm is detected as a change in capacitance, and the external pressure applied to the diaphragm is measured.
- W096 / 271123 proposes a pressure sensor based on a different idea from the conventional one.
- a capacity chamber is provided in a substrate having properties such as sapphire, and two electrodes facing the capacity chamber are arranged.
- the substrate constituting the capacitance chamber itself is compressed and deformed by the application of pressure, and a change in the distance between the electrodes due to the deformation of the substrate is detected as a capacitance change.
- FIG. 9 shows a pressure sensor disclosed in Reference 1.
- this pressure sensor comprises a sapphire substrate 101 having a lower electrode 101 a and a lead wire 101 b formed in a recess, and an upper electrode 102 a in a recess. And the sapphire substrate 102 on which the lead wires 102 b are formed so that the electrodes 101 a and 102 a face each other. Therefore, it is produced.
- the upper electrode 102a is provided on a substrate 102 thicker than the diaphragm, as shown in FIG.
- the substrate 102 When an external pressure is applied, the substrate 102 is hardly deformed, but the substrate portion (hereinafter, referred to as a pressure-sensitive frame portion 104) constituting the side wall around the capacity chamber is compressed and deformed.
- the distance between the electrodes changes with the deformation of the pressure-sensitive frame 104, and a change in capacitance is detected.
- Young's modulus of Safa I ⁇ is 3 0, 0 0 0 kg Z mm 2.
- the conventional structure has a problem that the measurement range is very narrow because it can be applied only to high-pressure applications.
- Another object of the present invention is to provide a capacitive pressure sensor capable of widening a measurement range. Disclosure of the invention
- a capacitive pressure sensor includes a first substrate, a first flat plate electrode provided on the first substrate, and a first substrate provided on the first substrate.
- the method of manufacturing a capacitive pressure sensor includes: a step of forming a concave portion in the first substrate and then forming a first flat plate electrode in the concave portion; A third substrate is directly bonded to one of the surfaces, and the other surface of the second substrate is polished to expose the groove. Forming a stage surrounded by, and forming a second plate electrode on the stage; and directly bonding the first substrate to the paired structure of the second and third substrates, Forming a capacity chamber in which the first and second plate electrodes face each other.
- the present invention can maintain a sufficiently large length of the pressure-sensitive frame portion that is elastically deformed by applying a pressure, and can form the upper and lower electrodes by forming the upper electrode on the stage. The distance between them can be reduced, and the measurement sensitivity and measurement range can be further improved.
- FIG. 1 is an exploded perspective view of a capacitive pressure sensor according to a first embodiment of the present invention.
- FIG. 2A is a cross-sectional view taken along line AA of FIG. 1, and FIG. 2B is a cross-sectional view taken along line BB of FIG.
- Fig. 3A is a plan view of the upper electrode shown in Fig. 1, and Fig. 3B is C-C 'in Fig. 3A. It is a line sectional view.
- FIG. 4A is a plan view of an upper electrode showing a second embodiment of the present invention
- FIG. 4B is a cross-sectional view taken along line DD ′ of FIG. 4A.
- FIG. 5A is a plan view of an upper electrode showing a third embodiment of the present invention
- FIG. 5B is a plan view of a lower electrode corresponding to the upper electrode shown in FIG. 5A
- FIG. 5C is a plan view of FIG.
- FIG. 5D is a circuit diagram including the upper electrode and the lower electrode shown in FIG. 5C.
- 6A to 6E are cross-sectional views along the line AA 'showing the manufacturing process of the pressure sensor of FIG.
- 7A to 7C are cross-sectional views taken along the line BB 'showing the manufacturing process of the pressure sensor of FIG.
- 8A and 8B are a plan view and a sectional view of the pressure sensor for explaining the sensitivity of the pressure sensor.
- FIG. 9 is an exploded perspective view of a conventional capacitive pressure sensor.
- FIG. 10 is a sectional view taken along line FF ′ of FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- the pressure sensor according to the present embodiment includes a rectangular lower electrode (fixed electrode) 1 a and a lead wire in a concave portion 7 a forming a capacity chamber 7 (FIGS. 2A and 2B).
- a slab-shaped upper substrate 3 joined to the intermediate substrate 2.
- the lower surface of the intermediate substrate 2 is joined to the upper surface of the lower substrate 1, and the lower surface of the upper substrate 3 is joined to the upper surface of the intermediate substrate 2.
- the upper electrode 2a has a groove formed in the intermediate substrate 2 as shown in FIG. 2A.
- the lower electrode 1 a is formed on the bottom surface of the concave portion 7 a of the lower substrate 1.
- the groove 2c is formed in a rectangular frame shape corresponding to the four sides of the capacity chamber 7 (the concave portion 7a of the lower substrate 1).
- the peripheral portion 4a of the intermediate substrate 2 and the side wall 4b of the capacity chamber 7 separated from the stage 5 by the groove 2c constitute a rectangular frame-shaped pressure-sensitive frame portion 4 which is elastically deformed by an external pressure.
- the upper electrode 2a is formed in a part of the groove 2c and is connected to an external device (not shown) through a lead wire 2b on the bridge 2d. Connected.
- the stage 5 provided with the upper electrode 2a and the peripheral portion 4a are separated by the groove 2c, so that the pressure-sensitive frame portion 4 that is elastically deformed when pressure is applied is pressed. It is longer in the application direction (compression direction). Therefore, in the present structure, it is possible to secure a long portion responsive to a pressure change while keeping the interval between the electrodes la and 2a narrow. Therefore, according to the pressure sensor according to the present embodiment, improvement in measurement sensitivity and expansion of the measurement range can be realized.
- the bridging portion 2d provided in a part of the groove 2c for leading out the lead wire 2b connected to the upper electrode 2a Very small compared to the overall size. For this reason, it does not affect the compression deformation of the pressure-sensitive frame portion 4 and does not hinder the pressure measurement.
- FIGS. 4A, 4B, 5A to 5D another embodiment of the upper electrode 2a and the lower electrode 1a will be described with reference to FIGS. 4A, 4B, 5A to 5D.
- a reference electrode 2 e is formed on the lower surface of the intermediate substrate 2 so as to surround the upper electrode 2 a on the stage 5 via the groove 2 c.
- the reference electrode 2e is used for measuring the reference capacitance together with the lower electrode 1a.
- the concave portion of the lower substrate 1, that is, the periphery of the capacity chamber 7 is extended outside the groove 2c, and the expanded portion
- the reference electrode 2e is arranged on the upper surface of the substrate so as to face the lower electrode 1a.
- the measurement result obtained by the movable electrode 2a can be corrected.
- the distance between the reference electrode 2 e and the lower electrode 1 a depends on the length ⁇ of the side wall of the capacitance chamber 7, but the electrode between the upper electrode 2 a and the lower electrode 1 a The distance depends on the length of the pressure-sensitive frame 4. For example, by setting ⁇ > about 100/3, the measurement sensitivity of the upper electrode 1a can be kept sufficiently large.
- two lower electrodes la—1 and la—2 that are divided so as to face the upper electrode 2a are recessed in the lower substrate 1. Formed within.
- the pressure change can be measured by preparing two lower electrodes la-1 and la-2.
- a bridge portion for a lead wire drawn out from the upper electrode 2a is not required, and manufacturing is easier than in the first embodiment.
- the upper surface of the base 2 for the intermediate substrate and the lower surface of the base 3 for the upper substrate on which the groove 2.c is formed by laser or the like are mirror-polished, and then several hundreds.
- the mirror surfaces of both bases are joined by direct joining in an atmosphere of about C.
- the bottom of the base 2 is polished until the groove 2c is exposed.
- a substrate unit 10 including the intermediate substrate 2 and the upper substrate 1 is manufactured.
- the surface state of the groove bottom X is a mirror-polished surface and is smooth.
- the base unit is manufactured by forming a groove using a groove, it is almost impossible to make the surface state of the groove bottom X a mirror-polished state.
- a substrate unit 10 having a groove having a bottom surface that is not a mirror surface is used as a sensor, stress is unevenly applied, and the substrate is easily damaged.
- the stress is uniformly applied to the sensor substrate, and the substrate is prevented from being damaged.
- the upper electrode 2a is formed on the stage 5 of the substrate unit 10 manufactured in FIG. 6C.
- the substrate unit 10 and the base 1 are directly bonded.
- the electrodes 1a and 2a are directly joined at a temperature that does not damage (melt).
- a pressure sensor having the pressure-sensitive frame portion 4 long in the pressure application direction is manufactured.
- a pressure sensor in which the groove 2c is formed in the substrate in a direction orthogonal to the pressure receiving surface can be manufactured.
- the pressure sensor manufactured as described above it is possible to increase the area to be compressed when the pressure is applied, while keeping the distance between the lower electrode 1a and the upper electrode 2a small.
- the bridge portion 2d will be described with reference to FIGS.
- the base 1 and the base 2 are directly joined to produce a board unit 10.
- the substrate portion corresponding to the bridge 2d is left.
- the lead wire 2b is formed on the bridge 2d as described above.
- the area of the pressure-receiving surface 6 100 (mm 2 ), the area of the pressure-sensitive frame 4 (the area of the joint with the substrate 1) ⁇ 15.36 (mm 2 ),
- a b 2 1 Z 3 0 0 0 0 X 0.0 1 X 6.5 (mm).
- the thickness of the pressure-sensitive frame portion 4 needs to be larger than the separation distance between the substrate 1 and the stage 5 on the substrate 3.
- the present invention is not limited to this.
- a single crystal material such as silicon, glass, or diamond may be used.
- the reference electrode 2e is not an essential component, and may be added as needed. Therefore, the present invention has an upper electrode 2a and a lower electrode 1a as a basic configuration. Further, the stage 5 may be provided on the lower electrode 1a instead of being provided on the upper electrode 2a.
- the concave portion 7a constituting the capacity chamber 7 is provided in the lower substrate 1, but the concave portion may be provided in the upper substrate joined to the lower substrate 1.
- the lower substrate 1 may be a slab-shaped substrate.
- the pressure sensor is formed by joining three substrates to mirror-finish the bottom of the groove 2c. If the bottom surface of the groove can be mirror-finished by using a method such as a pressure sensor, a pressure sensor can be manufactured simply by joining the two substrates. In this case, for example, it can be realized by inverting the substrate 2 shown in FIG. 6A and joining the substrate 2 to a lower substrate having a concave portion.
- the present invention can increase the length of the region that is compressed and deformed when pressure is applied while keeping the distance between the lower electrode and the upper electrode small, improving the measurement sensitivity and improving the measurement range. Expansion can be achieved.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01945787A EP1316786B1 (en) | 2000-07-04 | 2001-07-03 | Capacity type pressure sensor and method of manufacturing the pressure sensor |
US10/332,242 US6704186B2 (en) | 2000-07-04 | 2001-07-03 | Capacity type pressure sensor and method of manufacturing the pressure sensor |
DE60144094T DE60144094D1 (de) | 2000-07-04 | 2001-07-03 | Drucksensor des kapazitätstyps und verfahren zu seiner herstellung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-202367 | 2000-07-04 | ||
JP2000202367A JP3771425B2 (ja) | 2000-07-04 | 2000-07-04 | 容量式圧力センサおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002003043A1 true WO2002003043A1 (fr) | 2002-01-10 |
Family
ID=18699900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/005751 WO2002003043A1 (fr) | 2000-07-04 | 2001-07-03 | Capteur de pression de type capacite et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US6704186B2 (ja) |
EP (1) | EP1316786B1 (ja) |
JP (1) | JP3771425B2 (ja) |
CN (1) | CN1181324C (ja) |
DE (1) | DE60144094D1 (ja) |
WO (1) | WO2002003043A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4091241B2 (ja) * | 2000-09-29 | 2008-05-28 | 株式会社山武 | 圧力センサおよび圧力センサの製造方法 |
US7222639B2 (en) * | 2004-12-29 | 2007-05-29 | Honeywell International Inc. | Electrostatically actuated gas valve |
US8118748B2 (en) * | 2005-04-28 | 2012-02-21 | Medtronic, Inc. | Implantable capacitive pressure sensor system and method |
US7543604B2 (en) * | 2006-09-11 | 2009-06-09 | Honeywell International Inc. | Control valve |
US7644731B2 (en) | 2006-11-30 | 2010-01-12 | Honeywell International Inc. | Gas valve with resilient seat |
US8072764B2 (en) * | 2009-03-09 | 2011-12-06 | Apple Inc. | Multi-part substrate assemblies for low profile portable electronic devices |
US9557059B2 (en) | 2011-12-15 | 2017-01-31 | Honeywell International Inc | Gas valve with communication link |
US8905063B2 (en) | 2011-12-15 | 2014-12-09 | Honeywell International Inc. | Gas valve with fuel rate monitor |
US9851103B2 (en) | 2011-12-15 | 2017-12-26 | Honeywell International Inc. | Gas valve with overpressure diagnostics |
US9835265B2 (en) | 2011-12-15 | 2017-12-05 | Honeywell International Inc. | Valve with actuator diagnostics |
US8899264B2 (en) | 2011-12-15 | 2014-12-02 | Honeywell International Inc. | Gas valve with electronic proof of closure system |
US8839815B2 (en) | 2011-12-15 | 2014-09-23 | Honeywell International Inc. | Gas valve with electronic cycle counter |
US9995486B2 (en) | 2011-12-15 | 2018-06-12 | Honeywell International Inc. | Gas valve with high/low gas pressure detection |
US8947242B2 (en) | 2011-12-15 | 2015-02-03 | Honeywell International Inc. | Gas valve with valve leakage test |
US9074770B2 (en) | 2011-12-15 | 2015-07-07 | Honeywell International Inc. | Gas valve with electronic valve proving system |
US9846440B2 (en) | 2011-12-15 | 2017-12-19 | Honeywell International Inc. | Valve controller configured to estimate fuel comsumption |
US10422531B2 (en) | 2012-09-15 | 2019-09-24 | Honeywell International Inc. | System and approach for controlling a combustion chamber |
US9234661B2 (en) | 2012-09-15 | 2016-01-12 | Honeywell International Inc. | Burner control system |
TWI586946B (zh) * | 2013-02-04 | 2017-06-11 | Fujikura Ltd | Sensing detectors |
CN103148977B (zh) * | 2013-02-27 | 2016-01-20 | 东南大学 | 基于柔性基板的具有自封装功能的无源无线压力传感器 |
EP2868970B1 (en) | 2013-10-29 | 2020-04-22 | Honeywell Technologies Sarl | Regulating device |
EP2871455B1 (en) | 2013-11-06 | 2020-03-04 | Invensense, Inc. | Pressure sensor |
EP3367082A1 (en) | 2013-11-06 | 2018-08-29 | Invensense, Inc. | Pressure sensor |
US10024439B2 (en) | 2013-12-16 | 2018-07-17 | Honeywell International Inc. | Valve over-travel mechanism |
FI126999B (en) * | 2014-01-17 | 2017-09-15 | Murata Manufacturing Co | Improved pressure sensor |
US9841122B2 (en) | 2014-09-09 | 2017-12-12 | Honeywell International Inc. | Gas valve with electronic valve proving system |
US9645584B2 (en) | 2014-09-17 | 2017-05-09 | Honeywell International Inc. | Gas valve with electronic health monitoring |
EP3076146B1 (en) | 2015-04-02 | 2020-05-06 | Invensense, Inc. | Pressure sensor |
EP3117991A1 (fr) * | 2015-07-08 | 2017-01-18 | AGC Glass Europe | Vitrage automobile |
CN105575637B (zh) * | 2015-12-23 | 2017-11-24 | 四方继保(武汉)软件有限公司 | 一种悬浮平板电极结构的gis电子式电压互感器 |
US10503181B2 (en) | 2016-01-13 | 2019-12-10 | Honeywell International Inc. | Pressure regulator |
US10564062B2 (en) | 2016-10-19 | 2020-02-18 | Honeywell International Inc. | Human-machine interface for gas valve |
RU178898U1 (ru) * | 2017-12-12 | 2018-04-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский технологический университет" | Емкостной датчик давления с алмазной мембраной |
US11073281B2 (en) | 2017-12-29 | 2021-07-27 | Honeywell International Inc. | Closed-loop programming and control of a combustion appliance |
US10697815B2 (en) | 2018-06-09 | 2020-06-30 | Honeywell International Inc. | System and methods for mitigating condensation in a sensor module |
US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
US10955306B2 (en) * | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
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JPS4919875A (ja) * | 1972-04-18 | 1974-02-21 | ||
WO1983001536A1 (en) | 1981-10-13 | 1983-04-28 | United Technologies Corp | Silicon-glass-silicon capacitive pressure transducer |
US4950074A (en) * | 1988-05-02 | 1990-08-21 | IOT Entwicklungsgesellshaft fur Integrierte Optik-Technologie mbH | Method of determining the refractive index of a substance and apparatus thereof |
DE4244450A1 (en) | 1991-12-26 | 1993-07-01 | Yamatake Honeywell Co Ltd | Capacitive pressure sensor - contains electrodes mounted on electrically insulating substrates one of which has recess for housing the electrodes |
JPH05215770A (ja) | 1992-02-04 | 1993-08-24 | Hitachi Ltd | 半導体容量式加速度センサ |
EP0596711A2 (en) | 1992-11-06 | 1994-05-11 | Texas Instruments Incorporated | Capacitive pressure transducer apparatus |
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EP0982576A1 (en) | 1998-03-12 | 2000-03-01 | Yamatake Corporation | Sensor and method of producing the same |
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JPS56129831A (en) * | 1980-03-17 | 1981-10-12 | Yokogawa Hokushin Electric Corp | Pressure converter |
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2000
- 2000-07-04 JP JP2000202367A patent/JP3771425B2/ja not_active Expired - Lifetime
-
2001
- 2001-07-03 WO PCT/JP2001/005751 patent/WO2002003043A1/ja active Application Filing
- 2001-07-03 EP EP01945787A patent/EP1316786B1/en not_active Expired - Lifetime
- 2001-07-03 US US10/332,242 patent/US6704186B2/en not_active Expired - Lifetime
- 2001-07-03 CN CNB018122620A patent/CN1181324C/zh not_active Expired - Fee Related
- 2001-07-03 DE DE60144094T patent/DE60144094D1/de not_active Expired - Lifetime
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JPS4919875A (ja) * | 1972-04-18 | 1974-02-21 | ||
WO1983001536A1 (en) | 1981-10-13 | 1983-04-28 | United Technologies Corp | Silicon-glass-silicon capacitive pressure transducer |
US4405970A (en) * | 1981-10-13 | 1983-09-20 | United Technologies Corporation | Silicon-glass-silicon capacitive pressure transducer |
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DE4244450A1 (en) | 1991-12-26 | 1993-07-01 | Yamatake Honeywell Co Ltd | Capacitive pressure sensor - contains electrodes mounted on electrically insulating substrates one of which has recess for housing the electrodes |
JPH05215770A (ja) | 1992-02-04 | 1993-08-24 | Hitachi Ltd | 半導体容量式加速度センサ |
EP0596711A2 (en) | 1992-11-06 | 1994-05-11 | Texas Instruments Incorporated | Capacitive pressure transducer apparatus |
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EP0982576A1 (en) | 1998-03-12 | 2000-03-01 | Yamatake Corporation | Sensor and method of producing the same |
Non-Patent Citations (1)
Title |
---|
See also references of EP1316786A4 |
Also Published As
Publication number | Publication date |
---|---|
EP1316786B1 (en) | 2011-02-23 |
US20030189809A1 (en) | 2003-10-09 |
JP2002022583A (ja) | 2002-01-23 |
EP1316786A1 (en) | 2003-06-04 |
JP3771425B2 (ja) | 2006-04-26 |
EP1316786A4 (en) | 2007-08-01 |
CN1181324C (zh) | 2004-12-22 |
CN1440504A (zh) | 2003-09-03 |
DE60144094D1 (de) | 2011-04-07 |
US6704186B2 (en) | 2004-03-09 |
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