WO2002001652A1 - Gunn diodes - Google Patents
Gunn diodes Download PDFInfo
- Publication number
- WO2002001652A1 WO2002001652A1 PCT/GB2001/002839 GB0102839W WO0201652A1 WO 2002001652 A1 WO2002001652 A1 WO 2002001652A1 GB 0102839 W GB0102839 W GB 0102839W WO 0201652 A1 WO0201652 A1 WO 0201652A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transit
- gunn diode
- regions
- region
- gunn
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Definitions
- This invention relates to Gunn diodes.
- the power of a Gunn diode is limited by the amount of potential that can be safely applied before the device becomes vulnerable to breakdown from impact ionisation. This is particularly problematic at very high frequencies, in the tens of Gigahertz range, where the transit region length must be less than one micron.
- the length of the transit region is determined by the amount of time it takes for a charge monopole or dipole to transfer from the cathode to the anode at approximately 0.75 x 10 5 ms "1 , the optimum operating frequency being approximately 1/T.
- GaAs diodes required for high frequency operation for example 77 GHz or 94 GHz, must be less than one micron in length to operate in a fundamental mode.
- the size of the diode limits the power available. Only a relatively small potential can be applied before impact ionisation causes the device to breakdown. To deal with this, the device may be arranged to operate at half the required frequency to enable power to be extracted in a second harmonic mode.
- the present invention arose from consideration of an improved diode.
- a Gunn diode comprising a plurality of transit regions.
- the invention is particularly applicable to GaAs diodes for the reasons given above, but may be applied to diodes of any material.
- the plurality of transit regions may be implemented in a single device or in two or more discrete components connected in series.
- a single device with multiple transit regions however offers a cheap and efficient approach.
- a device in accordance with the invention is capable of sustaining charge domains simultaneously in each transit region of the plurality, the charge domains moving coherently with each other.
- the invention thus permits large power outputs to be achieved, for example, a three or four transit region device may yield power outputs of approximately 300% or 400% respectively greater than a comparable single transit region diode, with little or no change in device efficiency.
- the transit regions in a device may be substantially identical in length but in other embodiments, multiple transit regions of unequal lengths could be used. This may be advantageous where temperature gradients across the device might cause a non-uniform response. Also, where non-equal length transit regions are used, the device may be resonant at more than one frequency, giving rise to wider applications than conventional designs. In another embodiment, transit region lengths are non-equal but differ by a relatively small amount, which may lead to broadening of the useful frequency range.
- the invention is applicable to monopole and dipole modes of operation.
- each transit region of the plurality is similarly doped but in others different doping may be applied to different ones of the transit regions to achieve modified characteristics and performance.
- Figure 1 is an explanatory diagram relating to the operation of a Gunn diode with two transit regions
- Figure 2 shows the current, electric field and charge density at several different times in a single transit region device, and Figures 3 and 4 the same parameters for double and triple transit region devices respectively;
- Figure 6 shows power and efficiency for three devices at 55 GHz.
- a double transit region Gunn diode in accordance with the invention has a cathode 1 and an anode 2 with two transit regions 3 and 4 between them.
- the doping profile of the device is indicated by the unbroken line 5, from which it can be seen that there are highly doped parts 6 and notches 7.
- the broken line 8 indicates the charge density in the device when operating.
- this shows the current at (a), electric field at (b) and charge density at (c) at several different times in a single transit, conventional device under a 55 GHz potential Vr f (an imposed radio frequency potential on top of a dc bias) and dc potential V C of 5 V.
- Vr f an imposed radio frequency potential on top of a dc bias
- V C dc potential
- Figure 5 shows the device power and efficiency for the single and double transit region devices.
- the efficiency and frequency responses are almost identical and the power in the double transit region device is almost double that of the single transit region device.
- Figure 6 shows the power and efficiency of single, double and triple transit region devices.
- the increase in power achieved in the multiple transit region devices is almost linear whilst the efficiency is substantially the same.
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001266177A AU2001266177A1 (en) | 2000-06-29 | 2001-06-28 | Gunn diodes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0015887.3 | 2000-06-29 | ||
GB0015887A GB2368717A (en) | 2000-06-29 | 2000-06-29 | Gunn diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002001652A1 true WO2002001652A1 (en) | 2002-01-03 |
Family
ID=9894615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2001/002839 WO2002001652A1 (en) | 2000-06-29 | 2001-06-28 | Gunn diodes |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001266177A1 (en) |
GB (1) | GB2368717A (en) |
WO (1) | WO2002001652A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1130305A (en) * | 1966-01-21 | 1968-10-16 | Standard Telephones Cables Ltd | Series operated gunn effect device |
US3697831A (en) * | 1970-12-28 | 1972-10-10 | Us Navy | Series electrical, parallel thermal gunn devices |
JPH01168082A (en) * | 1987-12-24 | 1989-07-03 | New Japan Radio Co Ltd | Series operation type gunn diode |
US4879581A (en) * | 1986-07-09 | 1989-11-07 | Thomson-Csf | Transferred electron device with periodic ballistic regions |
WO1995004943A1 (en) * | 1993-08-04 | 1995-02-16 | Vorad Safety Systems, Inc. | Monopulse azimuth radar system for automotive vehicle tracking |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5263057A (en) * | 1975-11-19 | 1977-05-25 | Fujitsu Ltd | Exclusive logical sum circuit |
JPH10168082A (en) * | 1996-12-06 | 1998-06-23 | Sumitomo Seika Chem Co Ltd | Production of alkylthiophenylmagnesium halide |
-
2000
- 2000-06-29 GB GB0015887A patent/GB2368717A/en not_active Withdrawn
-
2001
- 2001-06-28 WO PCT/GB2001/002839 patent/WO2002001652A1/en active Application Filing
- 2001-06-28 AU AU2001266177A patent/AU2001266177A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1130305A (en) * | 1966-01-21 | 1968-10-16 | Standard Telephones Cables Ltd | Series operated gunn effect device |
US3697831A (en) * | 1970-12-28 | 1972-10-10 | Us Navy | Series electrical, parallel thermal gunn devices |
US4879581A (en) * | 1986-07-09 | 1989-11-07 | Thomson-Csf | Transferred electron device with periodic ballistic regions |
JPH01168082A (en) * | 1987-12-24 | 1989-07-03 | New Japan Radio Co Ltd | Series operation type gunn diode |
WO1995004943A1 (en) * | 1993-08-04 | 1995-02-16 | Vorad Safety Systems, Inc. | Monopulse azimuth radar system for automotive vehicle tracking |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 013, no. 439 (E - 827) 3 October 1989 (1989-10-03) * |
TSAY J ET AL: "Multidomain Gunn diodes", MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 3, no. 2, February 1990 (1990-02-01), pages 54 - 60, XP001039971, ISSN: 0895-2477 * |
VAN ZYL R R ET AL: "Multi-domain Gunn diodes with multiple hot electron launchers: a new approach to mm wave GaAs Gunn oscillator optimization", 5TH AFRICON CONFERENCE IN AFRICA, CAPE TOWN, SOUTH AFRICA, 28 SEPT.-1 OCT. 1999, IEEE, Piscataway, NJ, USA, pages 1193 - 1196 vol.2, XP000895948, ISBN: 0-7803-5546-6 * |
Also Published As
Publication number | Publication date |
---|---|
AU2001266177A1 (en) | 2002-01-08 |
GB0015887D0 (en) | 2000-08-23 |
GB2368717A (en) | 2002-05-08 |
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