WO2002001652A1 - Gunn diodes - Google Patents

Gunn diodes Download PDF

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Publication number
WO2002001652A1
WO2002001652A1 PCT/GB2001/002839 GB0102839W WO0201652A1 WO 2002001652 A1 WO2002001652 A1 WO 2002001652A1 GB 0102839 W GB0102839 W GB 0102839W WO 0201652 A1 WO0201652 A1 WO 0201652A1
Authority
WO
WIPO (PCT)
Prior art keywords
transit
gunn diode
regions
region
gunn
Prior art date
Application number
PCT/GB2001/002839
Other languages
French (fr)
Inventor
Michael William Carr
Geoffrey M. Dunn
Original Assignee
Marconi Applied Technologies Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Applied Technologies Limited filed Critical Marconi Applied Technologies Limited
Priority to AU2001266177A priority Critical patent/AU2001266177A1/en
Publication of WO2002001652A1 publication Critical patent/WO2002001652A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Definitions

  • This invention relates to Gunn diodes.
  • the power of a Gunn diode is limited by the amount of potential that can be safely applied before the device becomes vulnerable to breakdown from impact ionisation. This is particularly problematic at very high frequencies, in the tens of Gigahertz range, where the transit region length must be less than one micron.
  • the length of the transit region is determined by the amount of time it takes for a charge monopole or dipole to transfer from the cathode to the anode at approximately 0.75 x 10 5 ms "1 , the optimum operating frequency being approximately 1/T.
  • GaAs diodes required for high frequency operation for example 77 GHz or 94 GHz, must be less than one micron in length to operate in a fundamental mode.
  • the size of the diode limits the power available. Only a relatively small potential can be applied before impact ionisation causes the device to breakdown. To deal with this, the device may be arranged to operate at half the required frequency to enable power to be extracted in a second harmonic mode.
  • the present invention arose from consideration of an improved diode.
  • a Gunn diode comprising a plurality of transit regions.
  • the invention is particularly applicable to GaAs diodes for the reasons given above, but may be applied to diodes of any material.
  • the plurality of transit regions may be implemented in a single device or in two or more discrete components connected in series.
  • a single device with multiple transit regions however offers a cheap and efficient approach.
  • a device in accordance with the invention is capable of sustaining charge domains simultaneously in each transit region of the plurality, the charge domains moving coherently with each other.
  • the invention thus permits large power outputs to be achieved, for example, a three or four transit region device may yield power outputs of approximately 300% or 400% respectively greater than a comparable single transit region diode, with little or no change in device efficiency.
  • the transit regions in a device may be substantially identical in length but in other embodiments, multiple transit regions of unequal lengths could be used. This may be advantageous where temperature gradients across the device might cause a non-uniform response. Also, where non-equal length transit regions are used, the device may be resonant at more than one frequency, giving rise to wider applications than conventional designs. In another embodiment, transit region lengths are non-equal but differ by a relatively small amount, which may lead to broadening of the useful frequency range.
  • the invention is applicable to monopole and dipole modes of operation.
  • each transit region of the plurality is similarly doped but in others different doping may be applied to different ones of the transit regions to achieve modified characteristics and performance.
  • Figure 1 is an explanatory diagram relating to the operation of a Gunn diode with two transit regions
  • Figure 2 shows the current, electric field and charge density at several different times in a single transit region device, and Figures 3 and 4 the same parameters for double and triple transit region devices respectively;
  • Figure 6 shows power and efficiency for three devices at 55 GHz.
  • a double transit region Gunn diode in accordance with the invention has a cathode 1 and an anode 2 with two transit regions 3 and 4 between them.
  • the doping profile of the device is indicated by the unbroken line 5, from which it can be seen that there are highly doped parts 6 and notches 7.
  • the broken line 8 indicates the charge density in the device when operating.
  • this shows the current at (a), electric field at (b) and charge density at (c) at several different times in a single transit, conventional device under a 55 GHz potential Vr f (an imposed radio frequency potential on top of a dc bias) and dc potential V C of 5 V.
  • Vr f an imposed radio frequency potential on top of a dc bias
  • V C dc potential
  • Figure 5 shows the device power and efficiency for the single and double transit region devices.
  • the efficiency and frequency responses are almost identical and the power in the double transit region device is almost double that of the single transit region device.
  • Figure 6 shows the power and efficiency of single, double and triple transit region devices.
  • the increase in power achieved in the multiple transit region devices is almost linear whilst the efficiency is substantially the same.

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  • Junction Field-Effect Transistors (AREA)

Abstract

A Gunn diode comprises a plurality of transit regions (3, 4). Whatever potential is required by the user may be obtained by selecting an appropriate number of transit regions. Hence, power output may be increased compared with conventional devices. The transit regions may be realised in a single device or a plurality of series-connected diodes. The transit regions may be of the same length (as in the drawing) or may be of unequal lengths. The doping in each region may be the same (as indicated by the line 5) or may be different.

Description

Gunn Diodes
This invention relates to Gunn diodes.
The power of a Gunn diode is limited by the amount of potential that can be safely applied before the device becomes vulnerable to breakdown from impact ionisation. This is particularly problematic at very high frequencies, in the tens of Gigahertz range, where the transit region length must be less than one micron.
In a Gunn diode, the length of the transit region is determined by the amount of time it takes for a charge monopole or dipole to transfer from the cathode to the anode at approximately 0.75 x 105 ms"1, the optimum operating frequency being approximately 1/T. Thus, GaAs diodes required for high frequency operation, for example 77 GHz or 94 GHz, must be less than one micron in length to operate in a fundamental mode. The size of the diode limits the power available. Only a relatively small potential can be applied before impact ionisation causes the device to breakdown. To deal with this, the device may be arranged to operate at half the required frequency to enable power to be extracted in a second harmonic mode. This gives a reduction in efficiency however, but does permit a larger voltage to be applied as the device is longer. Another approach is to use InP instead of GaAs because its higher drift velocities enable longer transit regions to be used. This advantage is offset by the engineering difficulties in using this material compared to GaAs.
The present invention arose from consideration of an improved diode. According to the invention there is provided a Gunn diode comprising a plurality of transit regions.
By using the invention, by selecting an appropriate number of transit regions whatever potential is required may be obtained. Hence power output may be increased compared to the previously known devices. The invention is particularly applicable to GaAs diodes for the reasons given above, but may be applied to diodes of any material.
The plurality of transit regions may be implemented in a single device or in two or more discrete components connected in series. A single device with multiple transit regions however offers a cheap and efficient approach.
A device in accordance with the invention is capable of sustaining charge domains simultaneously in each transit region of the plurality, the charge domains moving coherently with each other. The invention thus permits large power outputs to be achieved, for example, a three or four transit region device may yield power outputs of approximately 300% or 400% respectively greater than a comparable single transit region diode, with little or no change in device efficiency.
The transit regions in a device may be substantially identical in length but in other embodiments, multiple transit regions of unequal lengths could be used. This may be advantageous where temperature gradients across the device might cause a non-uniform response. Also, where non-equal length transit regions are used, the device may be resonant at more than one frequency, giving rise to wider applications than conventional designs. In another embodiment, transit region lengths are non-equal but differ by a relatively small amount, which may lead to broadening of the useful frequency range.
The invention is applicable to monopole and dipole modes of operation.
In one embodiment, each transit region of the plurality is similarly doped but in others different doping may be applied to different ones of the transit regions to achieve modified characteristics and performance.
Some ways in which the invention may be performed are now described by way of example with reference to the accompanying drawings, in which:
Figure 1 is an explanatory diagram relating to the operation of a Gunn diode with two transit regions;
Figure 2 shows the current, electric field and charge density at several different times in a single transit region device, and Figures 3 and 4 the same parameters for double and triple transit region devices respectively;
Figure 5 shows power and efficiency for single and double transit region devices; and
Figure 6 shows power and efficiency for three devices at 55 GHz.
With reference to Figure 1, a double transit region Gunn diode in accordance with the invention has a cathode 1 and an anode 2 with two transit regions 3 and 4 between them. The doping profile of the device is indicated by the unbroken line 5, from which it can be seen that there are highly doped parts 6 and notches 7. The broken line 8 indicates the charge density in the device when operating.
With reference to Figure 2, this shows the current at (a), electric field at (b) and charge density at (c) at several different times in a single transit, conventional device under a 55 GHz potential Vrf (an imposed radio frequency potential on top of a dc bias) and dc potential V C of 5 V. This may be compared with similar graphs for a double transit region device shown in Figure 3 and a triple transit region device shown in Figure 4. The potential in the latter two devices is increased in proportion to the device size, with Vdc=10V and Vrf =4V, and VdC=15V and rf=6V respectively. In each case, the same good antiphase response of the current and potential exists to the 55 GHz potential. In the two multiple transit region devices, the dipoles move across each transit region in phase.
Figure 5 shows the device power and efficiency for the single and double transit region devices. The efficiency and frequency responses are almost identical and the power in the double transit region device is almost double that of the single transit region device.
Figure 6 shows the power and efficiency of single, double and triple transit region devices. The increase in power achieved in the multiple transit region devices is almost linear whilst the efficiency is substantially the same.

Claims

1. A Gunn diode comprising a plurality of transit regions.
2. A Gunn diode as claimed in claim 1, in which each transit region has a length, and the lengths of the transit regions are substantially equal.
3. A Gunn diode as claimed in claim 1, in which each transit region has a length, and the length of at least one transit region is different from the lengths of the other transit regions.
4. A Gunn diode as claimed in any preceding claim, in which at least one transit region is doped differently from the other transit regions.
5. A Gunn diode arrangement comprising a plurality of Gunn diodes connected in series, each diode having at least one transit region so that the Gunn diode arrangement comprises a plurality of transit regions.
6. A Gunn diode arrangement as claimed in claim 5, in which each transit region has a length, and the lengths of the transit regions are substantially equal.
7. A Gunn diode arrangement as claimed in claim 5, in which each transit region has a length, and the length of at least one transit region is different from the lengths of the other transit regions.
8. A Gunn diode arrangement as claimed in any one of claims 5 to 7, in which at least one transit region is doped differently from the other transit regions
9. A Gunn diode, or a Gunn diode arrangement, substantially as hereinbefore described, with reference to, or as illustrated in, the accompanying drawings.
10. A radar system including a Gunn diode or Gunn diode arrangement as claimed in any preceding claim.
11. An automotive radar system including a Gunn diode or Gunn diode arrangement as claimed in any one of claims 1 to 9.
12. A vehicle including automotive radar as claimed in claim 11.
13. A method of manufacture of a Gunn diode, including the step of forming a plurality of transit regions.
14. A method of manufacture of a Gunn diode, substantially as hereinbefore described, with reference to, or as illustrated in, the accompanying drawings.
PCT/GB2001/002839 2000-06-29 2001-06-28 Gunn diodes WO2002001652A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001266177A AU2001266177A1 (en) 2000-06-29 2001-06-28 Gunn diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0015887.3 2000-06-29
GB0015887A GB2368717A (en) 2000-06-29 2000-06-29 Gunn diodes

Publications (1)

Publication Number Publication Date
WO2002001652A1 true WO2002001652A1 (en) 2002-01-03

Family

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Application Number Title Priority Date Filing Date
PCT/GB2001/002839 WO2002001652A1 (en) 2000-06-29 2001-06-28 Gunn diodes

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AU (1) AU2001266177A1 (en)
GB (1) GB2368717A (en)
WO (1) WO2002001652A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1130305A (en) * 1966-01-21 1968-10-16 Standard Telephones Cables Ltd Series operated gunn effect device
US3697831A (en) * 1970-12-28 1972-10-10 Us Navy Series electrical, parallel thermal gunn devices
JPH01168082A (en) * 1987-12-24 1989-07-03 New Japan Radio Co Ltd Series operation type gunn diode
US4879581A (en) * 1986-07-09 1989-11-07 Thomson-Csf Transferred electron device with periodic ballistic regions
WO1995004943A1 (en) * 1993-08-04 1995-02-16 Vorad Safety Systems, Inc. Monopulse azimuth radar system for automotive vehicle tracking

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263057A (en) * 1975-11-19 1977-05-25 Fujitsu Ltd Exclusive logical sum circuit
JPH10168082A (en) * 1996-12-06 1998-06-23 Sumitomo Seika Chem Co Ltd Production of alkylthiophenylmagnesium halide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1130305A (en) * 1966-01-21 1968-10-16 Standard Telephones Cables Ltd Series operated gunn effect device
US3697831A (en) * 1970-12-28 1972-10-10 Us Navy Series electrical, parallel thermal gunn devices
US4879581A (en) * 1986-07-09 1989-11-07 Thomson-Csf Transferred electron device with periodic ballistic regions
JPH01168082A (en) * 1987-12-24 1989-07-03 New Japan Radio Co Ltd Series operation type gunn diode
WO1995004943A1 (en) * 1993-08-04 1995-02-16 Vorad Safety Systems, Inc. Monopulse azimuth radar system for automotive vehicle tracking

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 439 (E - 827) 3 October 1989 (1989-10-03) *
TSAY J ET AL: "Multidomain Gunn diodes", MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 3, no. 2, February 1990 (1990-02-01), pages 54 - 60, XP001039971, ISSN: 0895-2477 *
VAN ZYL R R ET AL: "Multi-domain Gunn diodes with multiple hot electron launchers: a new approach to mm wave GaAs Gunn oscillator optimization", 5TH AFRICON CONFERENCE IN AFRICA, CAPE TOWN, SOUTH AFRICA, 28 SEPT.-1 OCT. 1999, IEEE, Piscataway, NJ, USA, pages 1193 - 1196 vol.2, XP000895948, ISBN: 0-7803-5546-6 *

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Publication number Publication date
AU2001266177A1 (en) 2002-01-08
GB0015887D0 (en) 2000-08-23
GB2368717A (en) 2002-05-08

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