WO2001073833A1

WO2001073833A1 - Wet etching apparatus for semiconductor circuit and method for manufacturing etching needle used in apparatus

Info

Publication number: WO2001073833A1
Application number: PCT/KR2001/000363
Authority: WO
Inventors: Young Il Jang; Willy Eom
Original assignee: Sambon Tlg Co., Ltd.
Priority date: 2000-03-08
Filing date: 2001-03-08
Publication date: 2001-10-04
Also published as: KR100397390B1; AU2001241232A1; TW457575B; KR20010087718A

Abstract

The present invention discloses a wet etching apparatus for semiconductor circuit and manufacturing method for etching needle used in its apparatus. The wet etching apparatus for semiconductor circuit includes a storage for storing wet etchant, a tube connected with the storage and having specific radius for injecting wet etchant to a specific part on semiconductor wafer, a unit for keeping semiconductor wafer, and a unit for situating the tube to the specific part of semiconductor wafer.

Description

TITLE OF INVENTION

WET ETCHING APPARATUS FOR SEMICONDUCTOR CIRCUIT AND METHOD FOR MANUFACTURING ETCHING NEEDLE USED IN APPARATUS

TECHNICAL FIELD

The present invention relates to an apparatus for partially wet etching semiconductor circuit and method for manufacturing injection tube thereof, more particularly to the apparatus which partially wet etches layers formed on the semiconductor wafer and the method which manufactures the apparatus which supplies small amount of strong acetic and basic chemical material by use of etchant injection tube which is several nm ~ several hundred micrometer in diameter of its tip.

BACKGROUND ART

Conventionally, lithography method has been used to partially etch part of pattern formed on semiconductor substrate. In case opaque layer is formed on a semiconductor substrate in the manufacturing process, 6 step process must proceed for the removal of the opaque layer and key open etching for revealing align key pattern in the lower part: 1) coating photoresist; 2) exposing key open mask; 3) developing 4) etching for opening key; 5) stripping photoresist; 6) post etching cleaning.

The prior key open etching process is shown in FIG. 1. In FIG. la, there is shown a state of nitride film 20 having been chemical-mechanical polished after a device separating process in the prior manufacturing process of semiconductor wafers. On the semiconductor wafer 10 oxide film 30 are layered in the key pattern and nitride film 20 remains in theirs intervals. In FIG. lb, there is shown a state of having been gotten rid of nitride film. In FIG. lb, there is shown a state of having been equipped with a key open mask to remove the oxidized film layered in the key pattern. If the prior art, called optical lithography, is made use of to remove the oxidized film layered in the key pattern as shown in FIG. lb, after six steps cited above that is: 1) photosensitive resist coating process 2) key open mask exposure process (shown in FIG. lc) 3) development process 4) key open etching process 5) photosensitive resist stript process and 6) post- etching cleaning process, are gone thorough the key pattern is exposed as shown FIG. Id.

According to a prior process cite above, there is a problem that the process turn around time (TAT) is long because a lithography method is used for opening key patterns.

DISCLOSURE OF INVENTION

It is an object of the present invention to provide an apparatus for partially wet etching semiconductor circuit. It is another object of the present invention to provide an etchant injection tube of the apparatus for partially wet etching semiconductor circuit a method for manufacturing the apparatus and the etchant injection tube. For this, method for stably providing small amount of chemical material is presented by manufacturing an injection tube which contains strong acid and basic liquid and is several micrometer in diameter. And partial etching of semiconductor process and provision of small amount of liquid is possible based on physical and chemical stability of diamond. The above object can be accomplished by an apparatus for partially wet- etching semiconductor substrate on which a circuit pattern is formed, said apparatus comprising, an etchant storage part which stores etchant; an etchant injection tube in certain sized diameter which is connected to a section of said etchant; a means for holding which holds said semiconductor substrate to be etched; and, a means for moving which moves at least either said etchant injection tube or said semiconductor substrate to partial area of said semiconductor substrate to be etched.

The above another object can be accomplished by a method for manufacturing injection tube of an apparatus for partially wet etching semiconductor substrate, said method comprising steps of, making metal tip of which one end is lnm to lOum in diameter; coating material on an outer circumference of said metal tip, of which hardness is higher than said metal tip forming material; wherein said coating material is made of at least one material selected from diamond, cubic boron nitride and sapphire, cutting coating material which is coated on a part of said metal tip; wherein said coating material is made of at least one material selected from Teflon, polyethelene, polypropylene and acetal, and; removing said metal tip by etching.

BRIEF DESCRIPTION OF INVENTION

The above and other objects, advantages and features of the present invention will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

Fig. 1 show flowchart for opening key pattern in the prior semiconductor manufacturing process.

Fig. 2 shows flowchart for manufacturing the etchant injection tube. Fig. 3 shows process for manufacturing the metal tip by wet etching. Fig. 4 shows construction of apparatus for manufacturing metal tip by electrolysis. Fig. 5 shows mechanism forming metal tip by electrolysis.

Fig. 6 shows SEM sectional view after the metal tip is formed by electrolysis.

Fig. 7 shows the metal tip coated with diamond.

Fig. 8 shows that the metal tip 80 with diamond coated is contacted on the metal block 90.

Fig. 9 shows enlarged view illustrating in detail the rectangle block of fig. 8. Fig. 10 shows manufacturing opening of etchant injection tube by laser emulation.

Fig. 11 shows SEM sectional view after the metal tip coated with is cut off by laser process.

Fig. 12 shows vertical sectional view of the etchant injection tube of the present invention.

Fig. 13 shows embodiment of inspection of metal wiring by minute metal tip in the semiconductor manufacturing process Fig. 14 shows a schematic view of an apparatus for partially wet etching semiconductor circuit used for the etchant injection tube of the present invention. Fig. 15 shows an apparatus for partially wet etching semiconductor circuit of the present invention.

Fig. 16 shows an embodiment which is a flow for inspecting pattern for the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Storage means for storing chemical material of liquid state used for manufacturing process of semiconductor have been made from a high molecular substance which is chemically stable and low in price such as Teflon, PTFE.

Gold and white gold which have feature in tolerance against strong acid and a strong base are applied to applied areas which demands chemical stability. In the conventional semiconductor manufacturing process which processes silicon substrate, there is no case of injection tube in less than 50um in diameter. And there in an equipment (for example AFM) measuring surface bent by use of diamond probe, but it is not known that tube which is a process related component is made of diamond. A high molecular substance which is prior an acid & a base resistant material, or platinum are much weaker than a diamond so they are likely to be worn away or deformed by slight touch in case they are less than a few micrometer in size. But diamond is very hard and likely to be recovered from deformed state. And it is very chemically stable because it is not affected by all kinds of acid compound and base compound.

The present invention relates to a method for manufacturing an etchant injection tube of which tip is a few nanometer to a few hundred micrometer in diameter or width. And the injection tube is used for an apparatus for partially wet etching a semiconductor substrate. For manufacturing the injection tube, tip of metal line which is more than several dozen micrometer in thickness is minutely processed to have nanometer in diameter. The processed metal line is used for checking electrical short feature for forming poly wire layer and metal wire layer during manufacturing the semiconductor device and for probe testing of semiconductor circuit after the manufacturing process is finished. The processed metal line is coated with material such as diamond, and used to remove metal tip of substrate material so it can partially wet etch layers formed on semiconductor wafer.

The present invention will be described in detail with reference to the accompanying drawings. Fig. 2 shows flowchart for manufacturing the etchant injection tube. First,

Metal tip is made SI 1: it is a method for manufacturing a metal tip, and there are wet-etching by use of etchant and etching by electrolysis. The metal tip formed in this step is cylinder shaped and narrowed down to the end. And then, the metal tip is coated with material such as diamond S12. The coated material at the tip of the metal tip is cut S 13. And the metal tip is etched SI 4.

The method for manufacturing the etchant injection tube is described below in detail according to the present invention.

1. Manufacturing of the metal tip As described above, there are two methods for manufacturing the metal tip.

One is a wet etching method using etchant and the other is etching method using electrolysis. First, process for wet etching is explained as follows:

As shown in fig. 3, metal line or metal plate 60 which is covered with etching protection layer 62 is put in the etchant 60. In the beginning, all of the metal plate begins to be etched. But as time goes, middle area of the metal line or metal plate 60 is being etched faster than the interface of the metal line or metal plate and etching protection layer 62. Because of the difference in etching speed, metal line or metal plate 60 is transformed into metal tip 80 of which ending edge is sharp. Accordingly, sharp metal tip 80 can be mass manufactured.

Material of the metal line or metal plate 60 used for that is one selected from among W, Si, Mo, Ta, Ti, Glass, Si02, A1203, Si3N4, Zr02, CeO, MgO and CaO. Cylinder body of the metal line or metal plate should be more that 50 micrometer in diameter, considering the present state of technology. And it is preferable that its tip should be processed to be less than 10 nanometer to 100 micrometer in diameter.

At least one material is used for the etching protection layer 62, which is selected from glass, diamond, gold, white gold, material of which molecular weight is over 3000, paraffin and epoxy.

At least .one material is used for the etchant 64, which is selected from hydrochloric acid, nitric acid, sulfuric acid, fluoric acid, acetic acid, oxygenated water and ammonia water. And etchant evaporation prevention layer 66 is placed to prevent the etchant from evaporated.

The etching process by electrolysis is explained below.

Fig. 4 shows construction of an apparatus for manufacturing the metal tip by electrolysis. Metal lines 60 which are more than several tens micrometer in diameter, and several millimeter to several tens centimeter long are placed in batch by five, ten, twenty and so on. Material of the metal lines are made of one selected from Cu, Au, Ag, W, Cr, Si, Mo, Ta, Ti, Glass, Si02, A1203 and Si3N4.

All kinds of a base is prepared, such as dozen tens KOH, NaOH, Ca(OH)2,

NH40H, Mg(OH)2, Al(OH)3 which chemically acts on as OH- electrolyte but is not involved in reaction, and it is melted in deionized water of several hundred ml which is boiled in temperature of below 60 ^°C by stirrer. And then the solution

70 is placed in stage by use of bridged beaker.

The prepared metal line 60 such as tungsten is adhered to Anode, and at least one kind of metal group 68 is adhered to cathode, selected from sus- steel(Fe), Ru, Co, Ni, Pt of 8Bgroup, Cu, Ag, Au of IB group, Zn, Cd, Hg of 2B group, Al, Ga, In, Ti of 3 A group, Ge, Sn, Pb of 4A group, Sb, Bi of 5 A group and Po of 6A. And then, the metal line and steel of cathode are put in the solution, and more than 2.0 volt voltage is applied and it starts etching. It is preferable that wiring plates of anode and cathode on which metal lines 60 are installed are made of copper plate with good conductibilty and fixed to holes of the copper plates, the size of which is the same as that of the metal line.

At cathode which is an electrode for reduction, water is reduced to hydrogen, and iron is not reduced so it does not participate in reaction.

At anode which is an electrode for oxidation, water and the metal line such as tungsten are reduced to oxygen and it starts etching.

An equation is as follows:

W+2H ₂0+20H ^' → WO ₄ +3 H ₂ E= l.902V

In the initial etching reaction, surface tension starts to be generated along the surface of the metal line, and etching process continues to the end of the metal line by the surface tension, as shown in fig. 5. (a) shows that the surface tension 61 is generated along the surface of metal line 60. In this case, area which is higher than plane surface of liquid can be etched, because liquid goes up along the surface of metal line 60 by surface tension 61. Problem on formation of line caused by surface tension, as shown in (b), can be solved by removing the tip of metal tip by increasing etching time longer (decreasing etching rate) in fixed temperature.

In a few minutes, metal line 60 in the solution gets sharper quickly and removed, as shown in (c). As time goes by, metal line 60 goes vertically down at regular moving speed, and the tip of metal line in the solution is etched for a long time but upper part of body is not etched fully. On the whole, the metal line tapers down, as shown (d).

Conditions of tapering formation include density and temperature of the solution, and regular rising speed of z-axis stage, and angle of tip of metal line and may be controlled voluntarily. For the formation of 10 nanometer to 100 micrometer in diameter, it is maintained and controlled that the solution is 2 to 4 mol density; the temperature is 40 to 70 ^°C ; the rising speed of z-stage is 0.10 to 1000 mm/min. Preferably, the temperature maintains 50 to 60 ^°C . And it should be controlled and maintained that the solution is 2 mol density, the temperature is 55 °C , the rising speed of z axis stage is 0.35mm/min to make the tip of metal tip less than lOOnm in diameter. It is preferable that a thermocouple is installed to maintain regular temperature and prevent the temperature of the solution from decreasing in the etching process. The temperature of the solution may be controlled to control the length of the taper. Under the same rising speed, the length of the taper gets longer in below 40 ^°C because of slow reaction, and the length of the taper gets shorter in over 70 ^°C because of high etching rate. As described above, the length of the taper may be controlled voluntarily.

After finishing manufacture, the metal tips are collected and washed with distilled water. Fig. 6 shows sectional view of SEM after minute metal tip is formed by electrolysis. As shown in fig 6, the diameter of the metal tip tapers down to other size by electrolysis according to the circumstance of manufacturing process. In the fig. 6 (a), (b), the tip of the metal tip is etched down to less than 1 micrometer in diameter.

2. Coating with material such as diamond

There are dozens of or tens of the metal tips with their tips less than 100 micrometer in diameter manufactured by the process of fig 3 or fig 4., and 1/4 micrometer sized diamond paste for polishing is diluted with alcohol solution.

This process increases adhesive strength with the surface of the metal tip in case of subsequent diamond coating, the prepared metal tip is floated in the solution by use of supporting means. After 10 minute ultrasonic process, it pauses for 10 minutes, and the metal tip is put in distilled water after subsequent 5 minute process. Coating begins after the above process. The thickness of coating and surface morphology may be optionally controlled with 2 to 5 % of CH4 gas on the metal tip in case of the diamond coating. There are CVD method (Chemical Vapor Deposition), hot filament chemical vapor deposition method, or micro-wave method as a method for coating crystal diamond. There methods has been commonly used.

In the hot filament chemical vapor deposition method, several metal tips are installed on graphite substrate, and temperature of tungsten filament on the upper area of chamber is increased to 1800 to 2300 ^°C , and 100 to 200 seem Ar gas, CH4 gas which is less than 5 seem are flowed under the atmosphere of about 60 Torr pressure, and all metal tips places diamond at place which is 8 mm away from the graphite substrate.

But in the above method, temperature is too high and it is difficult to maintain regular temperature, it take more time to place diamond, and it is necessary to control the distance between filament and metal tip. Other than that, surface morphology may be formed in good shape.

In the microwave CVD method, Si or the prepared metal tip is substrate in the chamber in which DC plasma may be formed, and it is maintained that pressure is 75 to 85 Torr; power is 3000 to 3500 watt; atmosphere temperature is 800 to

1000, and 250 to 300 slm H2 gas, 25 to 35 seem CH4 gas becomes flowed, and diamond film may be laid. Fig. 7 shows sectional view in which metal tip 80 is coated with material such as multi-crystal shaped diamond.

Other coating materials are at least one selected among cubic boron nitride, and sapphire, Teflon, Polyethelene, polypropylene, and acetal. And it is preferable that thickness of coating film should be grown to 0.5 micrometer to 1.0 mm. More preferably, the thickness of coating film may be grown to several tens micrometer. But the thickness of coating film may vary according to a use.

3. Etchant injection tube production (removal of tip of coated material) Coated material at the tip of fig. 7 should be removed to manufacture etchant injection tube. In case the coated material is diamond, mechanical polishing method without diamond particle is not effective.

In the present invention, one tip of coating material is contacted with metals which have high diffusion coefficient of carbon, such as Fe, Co, Ni, Mo, Mn, V, W, Ti, and under over 300 ^°C temperature, carbon which is coupled with diamond is diffused into metal and consumed. It is difficult to make a nano opening at the end of diamond tube by general polishing method. For this reason, the polishing method by diffusing carbon atoms is very effective minute polishing method.

Fig. 8 shows that the metal tip 80 with diamond coated is contacted on the metal block 90. Fig. 9 shows enlarged view illustrating in detail the rectangle block of fig. 8.

Fig. 9 (a) shows state before diffusion, and fig. 9 (b) shows state during the process of diffusion. As shown in fig. 9(b), minute polishing of diamond is performed, and metal tip 80 with diamond laid meets with metal block 90 which is a diffused material to carbon, and diffusing path of carbon is blocked and it stops the minute polishing because visible diffusion does not occur between the two metals. It is preferable that more than one material should be used for the metal block of diffused material, the one material selected from Co, Ni, Mo, Mn, V, W and Ti, in case of polishing diamond.

The each metal tips 80 on which metal block and diamond are laid is connected with an electric wire, and the electric wire is electrically connected.

In case the resistance of the electric wire is less than giga ohm, or electric current flows when electric current applied, or certain electric current flow when voltage applied, it may be recognized that the metal block 90 and metal 80 on which diamond is laid are electrically connected with each other, namely one end of the diamond injection tube is open.

There are several methods for mass production: One end of the injection tube may be open by evaporation of carbon atoms by using laser as shown in fig. 10; The end may be out to plasma with oxygen; Carbon is combusted into carbon dioxide in the atmosphere including oxygen of over 400 ^°C . It is preferable that angle between center line of metal line with diamond laid and center line of laser beam should be 2 to 170 degree, and one end of injection tube should be polished by laser.

Laser beam is monochromatic light with single frequency. It is characterized by good nature of being straight. Laser beam is concentrated into a minute point if it goes through a lens, and high energy may be produced. If the concentrated beam is on a material, energy of the laser beam is absorbed in material so temperature goes up and material is melt down or evaporated.

The diamond injection tube may be cut off by using several laser source of table 1.

[Table 1]

The gas excimer is one of lasers mechanically solid, and easy to handle, and relatively small sized lasers, among the laser sources for processing materials.

The gas excimer has short wavelength (0.19 ~ 0.35 micrometer), and uses in less than 150W, F2, ArF, KrF or XeCl according to its characteristics, and C02 (9.6 ~ 10.6 micrometer) in 0.3 ~ 10 KW; He-Ne (0.6 ~ 1.06 micrometer) & Nd: YAG (1.06 micrometer) in 0.1 ~ 1 KW. And it is preferable that it maintain 90 degree with material, on the condition that minute tip coated with diamond may be cut off without damage.

Fig. 11 shows SEM sectional view in which the tip of injection tube is cut off after the above process, (a) shows that the tip of metal tip is coated with material such as diamond and the diamond at the tip is cut off. (b) and (c) shows cylinder body which is coated with material such as diamond, and inner metal tip 80 is coated with material such as diamond. In fig. (b) & (c), the thickness of diamond coating is different according to each processing condition. 4. Removal of Metal Tip

After the above process, the metal tip 80 within the etchant injection tube may be etched and removed by solution which includes more than one ingredient selected among hydrochloric acid, nitric acid, sulfuric acid, fluoric acid, acetic acid, hydrogen peroxide and ammonia.

For example, HF and HN03 are prepared in the ratio of 4:1, and the tips which were coated with diamond and cut are put in the solution. The time for removal largely depends on kinds of solutions, composition ratio, temperature of the solution. In case a ultrasonic cleaner is used, temperature of the solution is 45 ~ 55 ^°C, pause after vibration is repeated, the metal tip within injection tube coated with diamond may be effectively removed and it shortens time.

The diamond injection tube should be kept in atmosphere of which cleanliness is less than class 10 to prevent minute opening from being clogged because of contaminant such as particle, in case the diamond injection tube is out to the air.

Schematic view of the injection tube after following the above process is shown in fig. 12.

Fig. 12 shows cross-sectional view of the etchant injection tube of the present invention, (a) shows longitudinal section of the etchant injection tube. The injection tube gets narrow down to its end part, (b) shows cross section of body of etchant injection tube, and (c) shows enlarged sectional view of ending part of the etchant injection tube. The ending part of the etchant injection tube is 10 nm to 1 mm in diameter as shown in (a) and (c).

The etchant injection tube according to the present invention should not be etched with wet etchant and worn away from frequent contacts on the pattern of the semiconductor substrate. Because of this reason, it is preferable that the etchant injection tube is made of at lease one of materials such as diamond, cubic boron nitride (c-BN), sapphire, Teflon, polyethelene, polypropylene, acetal.

Fig. 13 shows an example of investigating electrical characteristics of poly wiring layer or, metal wiring layer during the semiconductor manufacturing process which is one embodiment of the present invention. Ml ~ M6 shows a metal layer, and an embodiment of inspecting state of metal wiring between each metal layer by etching and eroding insulation layer each metal layer interval.

Fig. 14 illustrates peripheral system construction for explaining movement of a wafer to be partially wet etched. As shown in fig. 4, a plurality of wafers are placed in wafer cassette 210, and wafer handler 230 is used to put out wafer to be inspected, and the wafer is loaded in precise location by use of wafer aligner 220, and the wafer is placed on the process stage 190.

Fig. 15 shows an apparatus for partially wet-etching semiconductor circuit used for carrying out the present invention. The apparatus for partially wet- etching semiconductor circuit is comprised of process stage 190 which moves a wafer 205 in the X and Y directions, which is placed on the apparatus; etchant cartridge 110 which stores etchant; etchant injection tube 100 which injects etchant on certain part of semiconductor substrate; means for holding the etchant cartridge 120; z axis moving bar 130 which is connected with the means for holding etchant cartridge 120 and main body 150 of the apparatus for wet etching; z axis moving motor 140 which moves the z axis moving bar 130; means for holding and moving process stage 170; x & y axis moving motor 160 which drives means for holding and moving process stage 170. The z axis moving bar 130 may move in the x, y and z axis, and the process stage 190 may move in the x, y and z axis while the process stage or the z axis moving bar 130 is fixed. The apparatus for partially wet etching semiconductor circuit is placed in the chamber separated by vertical separation wall 180. Wafer moves to inside chamber and is placed on the process stage 190 by use of the robot arm 240. The etchant injection tube 100 is placed on area to be wet etched by driving x & y moving motor 160 and z axis moving motor 140.

Fig. 16 is a flowchart showing a method for inspecting pattern according to the present invention. The substrate of a semiconductor is loaded on the apparatus, on which pattern to be inspected is formed SI . Inspection point is designated and nanometer sized etchant injection tube moves to the inspection point S2. In this case, the substrate of a semiconductor may move instead of the etchant injection tube. The etchant is put out on location to be inspected for wet etching S3. De-ionized water is injected at the next step S4. If etchant remains on the surface of a wafer, the pattern keeps being etched. The de-ionized water injection will dilute the etchant and control the extent of pattern's being etched. In this case, it is preferable that the amount of de-ionized injection is 1 to 100 times more than that of the etchant. And then, de-ionized water injected is ^■ sucked. S5 This step is needed to remove chemical residue on the pattern by using difference in pressure. Finally, the substrate which is partially wet-etched is unloaded from the apparatus S6. In accordance with these steps, inspection for shape of the etched pattern may be easily processed, after partial etching of pattern.

INDUSTRIAL APPLICABILITY

Partial etching may be performed, omitting the lithography process of prior semiconductor manufacturing process through partial etching on silicon substrate by providing small amount of acid or a basic liquid by use of the injection tube of the present invention. The present invention results in reduction in semiconductor processing cost and process development & management time.

Effects through the present invention is explained in detail as follows:

First, progress state of silicon substrate process may be checked by using partial etching, and the silicon substrate which is partially etched may be reused for the next process because it is not contaminated.

Second, the present invention is an critical equipment to investigate function and performance of a semiconductor used at the moment after chips are completed and before they are cut into each chip during the manufacturing of semiconductor, LCD, PDP and so on. It is used as medium for chip and tester and installed in a probe card for probing chip.

Third, the present invention is used for the decapsulation & de-processing which analyzes pattern structure and process structure by removing upper layer in case of problems on electrical characteristics after all processes are finished, by providing very small amount of acid or a basic liquid by the diamond injection tube. And the tip of the metal tip may be changed concave shaped by laser to store or provide reagent.

And at last, the diamond injection tube is very chemically stable and never reacted with the examination reagent so that it is used as a core component. Moreover, Ph value may be minutely controlled because chemical material may be provided by small amount.

Although the preferred embodiments of the present invention have been described in detail herein, it is to be understood that these descriptions are merely illustrative. The inventive system may be modified in a variety of ways and equivalents in order to suit a particular purpose while still employing the unique concepts set forth.

Claims

CLAIMSWhat is claimed is:

1. An apparatus for partially wet-etching semiconductor substrate on which a circuit pattern is formed, said apparatus comprising, an etchant storage part which stores etchant; an etchant injection tube in certain sized diameter which is connected to a section of said etchant; a means for holding which holds said semiconductor substrate to be etched; and, a means for moving which moves at least either said etchant injection tube or said semiconductor substrate to partial area of said semiconductor substrate to be etched.

2. The apparatus as in claim 1, said apparatus further comprising, a means for supplying etchant which supplies etchant on said semiconductor substrate.

3. The apparatus as in claim 2, wherein said means for supplying etchant is operated by a heating method or a pressing method.

4. The apparatus as in claim 1, wherein said etchant injection tube is made of at least one material selected from diamond, cubic boron nitride and sapphire.

5. The apparatus as in claim 1, wherein said etchant injection tube is made of at least one material selected from Teflon, polyethelene, polypropylene and acetal.

6. The apparatus as in claim 1, wherein said etchant injection tube is lOnm to lOOOum in diameter.

7. The apparatus as in claim 6, wherein a part of said etchant injection tube which is connected with a section of said etchant storage part is cylinder- shaped and bigger than 50 micrometer in diameter, and said diameter of said etchant injection tube is smaller than that of said cylinder-shaped diameter.

8. A method for manufacturing injection tube of an apparatus for partially wet etching semiconductor substrate, said method comprising steps of, making metal tip of which one end is lnm to 10 micrometer in diameter; coating material on an outer circumference of said metal tip, of which hardness is higher than said metal tip forming material; cutting coating material which is coated on a part of said metal tip; and removing said metal tip by etching.

9. The method as in claim 8, wherein said coating material is made of at least one material selected from diamond, cubic boron nitride and sapphire.

10. The method as in claim 8, wherein said coating material is made of at least one material selected from Teflon, polyethelene, polypropylene and acetal.

11. The method as in claim 8, wherein at said step of making metal tip, said metal tip is made of at least one material selected from Cu, Au, Ag, W, Cr, Si, Mo, Ta and Ti.

12. The method as in claim 8, wherein said step of making metal tip further comprising steps of wet etching, wherein said step of wet etching comprising, covering metal line to be partially etched with etching protection layer; and soaking said metal line which is covered with said etching protection layer in etchant.

13. The method as in claim 12, wherein said etching protection layer is made of at least one material selected from glass, diamond, gold, white gold, material of which molecular weight is more than 3000, paraffin and epoxy, and said etchant is made of at least one material selected from HCl, HN03, H2S04, HF, acetic acid, oxygenated water and ammonia water

14. The method as in claim 8, wherein said step of making metal tip further comprising a step of electrolysis, said step comprising steps of, installing which connects said metal line to anode, and a metal material to cathode, after electrolytic solution is filled in a bridged beaker; applying voltage which applies D.C. voltage to said metal line and said metal material; and etching which has said metal line up and down in said electrolytic solution at a certain speed.

15. The method as in claim 14, wherein at said step of installing, said electrolytic solution is a base having OH^".

16. The method as in claim 14, wherein at said step of installing, said metal material is at least one selected from Fe Ru Co Ni Pt of 8B group, Cu, Ag,

Au of IB group, Zn, Cd, Hg of 2B group, Al Ga In Ti of 3 A group, Ge Sn Pb of 4A group, Sb Bi of 5 A group and Po of 6 A group on a periodic table.

17. The method as in claim 14, wherein at said step of applying voltage, said D.C. voltage is higher than 2.0 volt.

18. The method as in claim 14, wherein said solution is 2 to 4 mol concentration, and ordinary temperature of said solution is 40 to 70 ^°C , and increasing speed is 0.10 to 1000 mm7min.

19. The method as in claim 18, wherein said temperature is controlled and maintained by use of a thermoelectric couple.

20. The method as in claim 8, wherein said step of coating material is performed by CVD (chemical vapor deposition) method, hot filament CVD method, or micro- wave CVD method.

21. The method as in claim 20, wherein in case said hot filament CVD method is used, a plurality of said metal tips are installed on a graphite substrate, and temperature of filament on upper part of chamber is increased to 1800 to 2300 ^°C , and some pressure is put on, and Ar gas of 100 to 200 scm and CH4 gas of less than 5 seem is flown.

22. The method as in claim 20, wherein in case said micro wave CVD is used, temperature is 900 to 100 ^°C , and pressure is 75 to 85 Torr, and electrical power is 3000 to 3500W, and H2 gas of 250 to 300 slm and CH4 gas of 25 to 35 seem is flown in a chamber where DC plasma is formed and Si or said metal tip is used as a substrate.

23. The method as in claim 8, wherein at said step of coating material, thickness of said material is 0.5 micrometer to 1 mm.

24. The method as in claim 8, wherein said step of coating material includes step of diffusing said coating material after said coating material id contacted on metal diffused material of which diffusion coefficient is bigger than that of said coating material.

25. The method as in claim 24, wherein said step of diffusing is performed in more than 300 ^°C temperature.

26. The method as in claim 24, wherein said metal diffused material is one selected among Co, Ni, Mo, Mn, V, W and Ti.

27. The method as in claim 8, wherein said step of removing coating material uses laser beam, and angle between center line of said laser beam and center line of said metal tip is 90 degree, or 2 to 170 degree.

28. The method as in claim 27, wherein source of said laser is one selected among F2, ArF, KrF & XeCl with wavelength of 0.19 to 0.35 micrometer and power of less than 150W, C02 with wavelength of 9.6 to 10.6 micrometer and power of 0.3 to 10KW, He-Ne with wavelength of 0.6 to 1.06 micrometer and power of 0.1 to 1KW, and solid Nd: YAG with 1.06 micrometer wavelength and power of 0.1 to 1 KW.

29. The method as in claim 8, wherein said step of removing coating material is performed by exposing tip to plasma including oxygen.

30. The method as in claim 8, wherein said step of removing coating material is performed by combusting oxygen into carbon dioxide in an atmosphere of more than 400 ^°C including oxygen.

31. The method as in claim 8, wherein said step of removing metal tip includes steps of, putting injection tube of which said metal tip is coated with coating material in an etchant; and repeating vibration and pause while keeping temperature of said etchant by use of ultrasonic cleaner.

32. The method as in claim 31, wherein said etchant is composed of at least one selected among hydrochloric acid, nitric acid, sulfuric acid, fluoric acid, acetic acid, oxygenated water and ammonia water.

33. The method as in claim 31, wherein said etchant is solution which includes fluoric acid and nitric acid in ratio of 4: 1, and temperature of said etchant is 45 to 55 ^°C .

34. The method as in claim 8, further comprising step of, storing said injection tube in circumstance of less than class 10 or putting in distilled water after said metal tip is removed.