WO2001054173A1 - A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component - Google Patents
A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component Download PDFInfo
- Publication number
- WO2001054173A1 WO2001054173A1 PCT/FI2001/000043 FI0100043W WO0154173A1 WO 2001054173 A1 WO2001054173 A1 WO 2001054173A1 FI 0100043 W FI0100043 W FI 0100043W WO 0154173 A1 WO0154173 A1 WO 0154173A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quantum well
- well component
- film structure
- opto
- component
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000005693 optoelectronics Effects 0.000 title abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000000603 solid-source molecular beam epitaxy Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 38
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 238000005036 potential barrier Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 26
- 239000010408 film Substances 0.000 description 18
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical class OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
Definitions
- the present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in the opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light.
- the present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light .
- Opto-electronic quantum components can be manufactured for example as a two-step process, wherein in the first step an epitaxial substrate is manufactured and in the second step a quantum well component is processed to this substrate.
- a semiconductor wafer such as a gallium arsenide (GaAs)
- GaAs gallium arsenide
- an actual quantum well component or components are formed to this film structure.
- a large portion of the opto-electronic quantum well components manufactured today are formed using such thin film technology.
- the quantity of the films formed on the semiconductor wafer can vary in different embodiments.
- a so-called MBE (Molecular Beam Epitaxy) method is utilized in the manufacture of the films.
- a further modification developed from this is called solid source molecular beam epitaxy (SSMBE).
- a film structure is grown on the surface of the substrate, wherein a so-called epitaxial wafer is developed.
- quantum well components are manufactured on the surface of this substrate by using various etching and/or growth methods.
- a plurality of quantum well components is formed at a time for one semiconductor wafer used as the substrate, the components being detached at the final stage of the manufacture and encased, which makes them easier to handle and the quantum well components are better protected against ambient conditions and mechanical stress.
- opto-electronic quantum well components are manufactured, which include light- emitting and light receiving components.
- Light emitting components include inter alia light emitting diodes (LED) and laser diodes.
- An aim in the manufacture of opto-electronic quantum well components is to provide as good a performance as possible; for example in light emitting components the aim is to achieve as high a luminosity, speed and good resistance against ambient conditions as possible.
- the manufacturing method selected for the quantum well components is decisive for these conditions. In prior art manufacturing methods, the film growth is performed in a semiconductor wafer that is cut exactly along the crystal direction [100].
- this crystal direction [100] is not necessarily the best possible direction, but the properties of the opto-electonic quantum well components can be improved by cutting the semiconductor wafer along a direction different from said crystal direction [100]. It is an aim of the present invention to improve the performance of an opto-electronic quantum well component compared to opto-electonic quantum well components of the prior art.
- the invention is based on the idea that on the surface of the quantum well component substrate, on which the film structure is formed, the crystal direction differs from the direction [100] and the film structure is formed using the SSMBE method.
- the opto-electronic quantum well component according to the present invention is characterized in, that
- the crystal direction of the film structure differs from the direction [100], and
- the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
- the method according to the present invention is characterized in, that
- the crystal direction of the film structure differs from the direction ([100]), and
- the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
- the angular cut of the invention can provide opto-electronic quantum well components having a significantly better coefficient of efficiency compared to the opto-electronic quantum well components of prior art, inter alia due to the fact that crystal errors can be eliminated even entirely or almost entirely by angular cutting.
- the light emitting opto-electronic quantum well component of the invention produces a much higher luminosity than those provided by light emitting opto-electronic quantum well components of prior art.
- FIG. 1 shows a semiconductor bar of which the semiconductor wafers are manufactured
- Fig. 2 shows an enlarged detail of a cross section illustrating a semiconductor wafer that is cut according to the invention and on which film layers are grown.
- a semiconductor bar 2 is used that is formed of wished semiconductor material, such as gallium arsenide.
- the semiconductor bar 2 should be as clean as possible so that the resulting component would be of as good quality as possible.
- semiconductor wafers 1 are cut from the semiconductor bar 2 in a manner that the crystal direction differs from the direction [100].
- Fig. 1 illustrates inter alia this cristal direction with axes x, y, z.
- a broken line 3 illustrates a section plane (100)
- a solid line 4 illustrates a section plane that is applicable in the component of the invention and differs from the crystal plane (100). This difference can be from 1 to 20°.
- Fig. 2 presents in a reduced manner an enlarged cross-section of the semiconductor wafer 1. Here the benching is clearly visible. By cutting along the crystal direction [100] in accordance with the prior art, no such benching is developed.
- the diagonally cut semiconductor wafers are transferred to the first manufacturing step, wherein films are epitaxially grown onto the surface of the semiconductor wafers.
- the present invention utilizes the SSMBE method. In the growth process a necessary quantity of layers is formed onto the surface of the semiconductor wafer. The number of grown layers is dependent inter alia on the type of the manufactured component. The number of layers can be tens or even hundreds. A part of these layers is formed as so-called quantum well layers (quantum wells). An additional quantum barrier (potential barrier) is formed on both sides of such a quantum well layer. Using the method of the invention, the edges of these quantum barrier layers can be formed higher, which improves the trapping of the charge carriers in the quantum well layer. Fig.
- FIG. 2 illustrates two layers 5a, 5b that are grown onto the surface of the semiconductor wafer.
- This Fig. 2 shows that the layers are increasing on the benching planes. As a consequence, the layers are better fastened onto the surface of the semiconductor wafer and when the entire surface of the wafer is examined the layers are spreading relatively evenly.
- the layers are not necessarily formed evenly on the surface of a wafer cut along the direction [100] in accordance with prior art, but in some parts of the wafer the thickness of the layer can vary to a significant degree and therefore deteriorate the crystal quality of the resulting thin film.
- the semiconductor wafer 1 is transferred to the second step, wherein the actual component structure is formed. It is known as such that a plurality of components is formed for one semiconductor wafer.
- different semiconductors are deposited onto the surface of the semiconductor wafer by using various maskings, and a part of the layers is etched away in order to provide a desired electrical coupling.
- the method according to the invention is used for manufacturing opto- electronic components.
- opto-electronic components are characterized by a certain wave-length range.
- the present invention is applicable particularly for manufacturing opto-electronic components of the red spectrum range for the wave-length ranges 620 nm to 690 nm, but it is also applicable for longer wave-length ranges.
- the opto-electronic components are manufactured onto the surface of the semiconductor wafer 1 , the semiconductor wafer 1 can be cut to separate different components from each other.
- the components are also cased, wherein the necessary wirings are also performed between the component and the external conductors fastened to the case in order to obtain a wished electrical coupling.
- the cased component can advantageously be fastened by soldering to an electronic device.
- the component can also include impure Al x Ga ⁇ ln 1-x- ⁇ As z P ⁇ -z Distributed Bragg semiconductor mirrors (DBR) doped according to the n or p type (Si or Be).
- DBR Distributed Bragg semiconductor mirrors
- the quantum well component can be brought to emit light towards its substantially perpendicular surface. Without such mirror arrangement the light is emitted from the edges of the quantum well component.
- the above-mentioned structures are carried out in particular with the all-solid source molecular beam epitaxy method (SSMBE).
- the component that emits light from a substantially perpendicular surface of a component can also contain a micro-cavitation layer.
- the cavity is limited by two Distributed Bragg semiconductor mirrors described above, one of which is limiting the cavity from above and the other from underneath.
- the quantum well or wells are situated at the antinode of the Fabry-Perot wave of the micro- cavity or in the immediate vicinity thereof.
- the wave of the quantum well is at the resonance or almost at the resonance with the Fabry- Perot well of the cavity, so that the quantum well would couple optically to the cavity as efficiently as possible.
- the present invention is not limited solely to the above-presented embodiments, but it can be modified within the scope of the appended claims.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001230269A AU2001230269A1 (en) | 2000-01-21 | 2001-01-19 | A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20000125A FI20000125A (en) | 2000-01-21 | 2000-01-21 | Process for producing an optoelectronic component and optoelectronic component |
FI20000125 | 2000-01-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001054173A1 true WO2001054173A1 (en) | 2001-07-26 |
Family
ID=8557156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FI2001/000043 WO2001054173A1 (en) | 2000-01-21 | 2001-01-19 | A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001230269A1 (en) |
FI (1) | FI20000125A (en) |
WO (1) | WO2001054173A1 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338633A (en) * | 1992-12-17 | 1994-12-06 | Sharp Corp | Manufacture of ii-vi compound semiconductor thin film and ii-vi compound semiconductor device |
-
2000
- 2000-01-21 FI FI20000125A patent/FI20000125A/en unknown
-
2001
- 2001-01-19 AU AU2001230269A patent/AU2001230269A1/en not_active Abandoned
- 2001-01-19 WO PCT/FI2001/000043 patent/WO2001054173A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338633A (en) * | 1992-12-17 | 1994-12-06 | Sharp Corp | Manufacture of ii-vi compound semiconductor thin film and ii-vi compound semiconductor device |
Non-Patent Citations (3)
Title |
---|
GIAN-LUCA BONA ET AL.: "(A1) GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates", pages 1126 * |
M. PESSA ET AL.: "All-solid-source MBE growth of AlGaInAsp-based optoelectronic devices", 10TH INTERN. CONF. ON INDIUM PHOSPHIDE ...., May 1998 (1998-05-01), TSUKUBA, JAPAN, pages 474 * |
PATENT ABSTRACTS OF JAPAN * |
Also Published As
Publication number | Publication date |
---|---|
FI20000125A0 (en) | 2000-01-21 |
FI20000125A (en) | 2001-10-16 |
AU2001230269A1 (en) | 2001-07-31 |
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