WO2001054173A1 - A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component - Google Patents

A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component Download PDF

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Publication number
WO2001054173A1
WO2001054173A1 PCT/FI2001/000043 FI0100043W WO0154173A1 WO 2001054173 A1 WO2001054173 A1 WO 2001054173A1 FI 0100043 W FI0100043 W FI 0100043W WO 0154173 A1 WO0154173 A1 WO 0154173A1
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Prior art keywords
quantum well
well component
film structure
opto
component
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PCT/FI2001/000043
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French (fr)
Inventor
Tomi Leinonen
Markus Pessa
Seppo Orsila
Petteri Uusimaa
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Optoelectronics Research Centre
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Priority to AU2001230269A priority Critical patent/AU2001230269A1/en
Publication of WO2001054173A1 publication Critical patent/WO2001054173A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires

Definitions

  • the present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in the opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light.
  • the present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light .
  • Opto-electronic quantum components can be manufactured for example as a two-step process, wherein in the first step an epitaxial substrate is manufactured and in the second step a quantum well component is processed to this substrate.
  • a semiconductor wafer such as a gallium arsenide (GaAs)
  • GaAs gallium arsenide
  • an actual quantum well component or components are formed to this film structure.
  • a large portion of the opto-electronic quantum well components manufactured today are formed using such thin film technology.
  • the quantity of the films formed on the semiconductor wafer can vary in different embodiments.
  • a so-called MBE (Molecular Beam Epitaxy) method is utilized in the manufacture of the films.
  • a further modification developed from this is called solid source molecular beam epitaxy (SSMBE).
  • a film structure is grown on the surface of the substrate, wherein a so-called epitaxial wafer is developed.
  • quantum well components are manufactured on the surface of this substrate by using various etching and/or growth methods.
  • a plurality of quantum well components is formed at a time for one semiconductor wafer used as the substrate, the components being detached at the final stage of the manufacture and encased, which makes them easier to handle and the quantum well components are better protected against ambient conditions and mechanical stress.
  • opto-electronic quantum well components are manufactured, which include light- emitting and light receiving components.
  • Light emitting components include inter alia light emitting diodes (LED) and laser diodes.
  • An aim in the manufacture of opto-electronic quantum well components is to provide as good a performance as possible; for example in light emitting components the aim is to achieve as high a luminosity, speed and good resistance against ambient conditions as possible.
  • the manufacturing method selected for the quantum well components is decisive for these conditions. In prior art manufacturing methods, the film growth is performed in a semiconductor wafer that is cut exactly along the crystal direction [100].
  • this crystal direction [100] is not necessarily the best possible direction, but the properties of the opto-electonic quantum well components can be improved by cutting the semiconductor wafer along a direction different from said crystal direction [100]. It is an aim of the present invention to improve the performance of an opto-electronic quantum well component compared to opto-electonic quantum well components of the prior art.
  • the invention is based on the idea that on the surface of the quantum well component substrate, on which the film structure is formed, the crystal direction differs from the direction [100] and the film structure is formed using the SSMBE method.
  • the opto-electronic quantum well component according to the present invention is characterized in, that
  • the crystal direction of the film structure differs from the direction [100], and
  • the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
  • the method according to the present invention is characterized in, that
  • the crystal direction of the film structure differs from the direction ([100]), and
  • the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
  • the angular cut of the invention can provide opto-electronic quantum well components having a significantly better coefficient of efficiency compared to the opto-electronic quantum well components of prior art, inter alia due to the fact that crystal errors can be eliminated even entirely or almost entirely by angular cutting.
  • the light emitting opto-electronic quantum well component of the invention produces a much higher luminosity than those provided by light emitting opto-electronic quantum well components of prior art.
  • FIG. 1 shows a semiconductor bar of which the semiconductor wafers are manufactured
  • Fig. 2 shows an enlarged detail of a cross section illustrating a semiconductor wafer that is cut according to the invention and on which film layers are grown.
  • a semiconductor bar 2 is used that is formed of wished semiconductor material, such as gallium arsenide.
  • the semiconductor bar 2 should be as clean as possible so that the resulting component would be of as good quality as possible.
  • semiconductor wafers 1 are cut from the semiconductor bar 2 in a manner that the crystal direction differs from the direction [100].
  • Fig. 1 illustrates inter alia this cristal direction with axes x, y, z.
  • a broken line 3 illustrates a section plane (100)
  • a solid line 4 illustrates a section plane that is applicable in the component of the invention and differs from the crystal plane (100). This difference can be from 1 to 20°.
  • Fig. 2 presents in a reduced manner an enlarged cross-section of the semiconductor wafer 1. Here the benching is clearly visible. By cutting along the crystal direction [100] in accordance with the prior art, no such benching is developed.
  • the diagonally cut semiconductor wafers are transferred to the first manufacturing step, wherein films are epitaxially grown onto the surface of the semiconductor wafers.
  • the present invention utilizes the SSMBE method. In the growth process a necessary quantity of layers is formed onto the surface of the semiconductor wafer. The number of grown layers is dependent inter alia on the type of the manufactured component. The number of layers can be tens or even hundreds. A part of these layers is formed as so-called quantum well layers (quantum wells). An additional quantum barrier (potential barrier) is formed on both sides of such a quantum well layer. Using the method of the invention, the edges of these quantum barrier layers can be formed higher, which improves the trapping of the charge carriers in the quantum well layer. Fig.
  • FIG. 2 illustrates two layers 5a, 5b that are grown onto the surface of the semiconductor wafer.
  • This Fig. 2 shows that the layers are increasing on the benching planes. As a consequence, the layers are better fastened onto the surface of the semiconductor wafer and when the entire surface of the wafer is examined the layers are spreading relatively evenly.
  • the layers are not necessarily formed evenly on the surface of a wafer cut along the direction [100] in accordance with prior art, but in some parts of the wafer the thickness of the layer can vary to a significant degree and therefore deteriorate the crystal quality of the resulting thin film.
  • the semiconductor wafer 1 is transferred to the second step, wherein the actual component structure is formed. It is known as such that a plurality of components is formed for one semiconductor wafer.
  • different semiconductors are deposited onto the surface of the semiconductor wafer by using various maskings, and a part of the layers is etched away in order to provide a desired electrical coupling.
  • the method according to the invention is used for manufacturing opto- electronic components.
  • opto-electronic components are characterized by a certain wave-length range.
  • the present invention is applicable particularly for manufacturing opto-electronic components of the red spectrum range for the wave-length ranges 620 nm to 690 nm, but it is also applicable for longer wave-length ranges.
  • the opto-electronic components are manufactured onto the surface of the semiconductor wafer 1 , the semiconductor wafer 1 can be cut to separate different components from each other.
  • the components are also cased, wherein the necessary wirings are also performed between the component and the external conductors fastened to the case in order to obtain a wished electrical coupling.
  • the cased component can advantageously be fastened by soldering to an electronic device.
  • the component can also include impure Al x Ga ⁇ ln 1-x- ⁇ As z P ⁇ -z Distributed Bragg semiconductor mirrors (DBR) doped according to the n or p type (Si or Be).
  • DBR Distributed Bragg semiconductor mirrors
  • the quantum well component can be brought to emit light towards its substantially perpendicular surface. Without such mirror arrangement the light is emitted from the edges of the quantum well component.
  • the above-mentioned structures are carried out in particular with the all-solid source molecular beam epitaxy method (SSMBE).
  • the component that emits light from a substantially perpendicular surface of a component can also contain a micro-cavitation layer.
  • the cavity is limited by two Distributed Bragg semiconductor mirrors described above, one of which is limiting the cavity from above and the other from underneath.
  • the quantum well or wells are situated at the antinode of the Fabry-Perot wave of the micro- cavity or in the immediate vicinity thereof.
  • the wave of the quantum well is at the resonance or almost at the resonance with the Fabry- Perot well of the cavity, so that the quantum well would couple optically to the cavity as efficiently as possible.
  • the present invention is not limited solely to the above-presented embodiments, but it can be modified within the scope of the appended claims.

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Abstract

The present invention relates to an opto-electronic quantum well component manufactured of III to V compounds and transmitting visible red light in the wave length range of 620 to 690 nm (nanometers). The quantum well component is made of at least one AlXGAYIn1-X-YP quantum well layer on the active range, wherein 0≤X≤1, 0≤Y≤1, and comprises substantially a tabular substrate, on at least other surface of which there is evaporated a film structure having at least two layers. The component comprises a substantially tubular substrate, on at least one side of which there is evaporated a film structure having at least two layers. On the surface of the component substrate, on which the film structure is formed, the crystal direction differs from the direction (100), and the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.

Description

A Method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component
The present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in the opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light. The quantum well component transmits visible red light within a wave-length range of 620 to 690 nm at its edges or on its surface, which quantum well component is made of at least one AlχGaγln1-x-γP quantum well layer on the active range, in which 0=X=1 , 0=Y=1 , and comprises a substantially tabular substrate, on at least other surface of which there is evaporated a film structure having at least two layers. The present invention relates to an opto-electronic quantum well component to be used in the manufacture of such semiconductor chips that are applicable to be used in opto-electronic applications within the wave-length range of 620 to 690 nm (nanometers) of visible red light . The quantum well component transmits visible red light within the wave-length range of 620 to 690 nm at its edges or on its surface, which quantum well component is made of at least one AlxGaγln1-x-γP quantum well layer within the active range, in which 0=X=1 , 0=Y=1 , and the quantum well component comprises a substantially tabular substrate, on at least other surface of which there is evaporated a film structure having at least two layers.
Opto-electronic quantum components can be manufactured for example as a two-step process, wherein in the first step an epitaxial substrate is manufactured and in the second step a quantum well component is processed to this substrate. A semiconductor wafer, such as a gallium arsenide (GaAs), is used in the manufacture of the substrate. On the surface of this semiconductor wafer there is evaporated a layered epitaxial film structure. In the second step, an actual quantum well component or components are formed to this film structure. A large portion of the opto-electronic quantum well components manufactured today are formed using such thin film technology. The quantity of the films formed on the semiconductor wafer can vary in different embodiments. A so-called MBE (Molecular Beam Epitaxy) method is utilized in the manufacture of the films. A further modification developed from this is called solid source molecular beam epitaxy (SSMBE).
Accordingly, in the first manufacturing step a film structure is grown on the surface of the substrate, wherein a so-called epitaxial wafer is developed. In the second manufacturing step, quantum well components are manufactured on the surface of this substrate by using various etching and/or growth methods. Typically, a plurality of quantum well components is formed at a time for one semiconductor wafer used as the substrate, the components being detached at the final stage of the manufacture and encased, which makes them easier to handle and the quantum well components are better protected against ambient conditions and mechanical stress.
By using the above described method particularly opto-electronic quantum well components are manufactured, which include light- emitting and light receiving components. Light emitting components include inter alia light emitting diodes (LED) and laser diodes. An aim in the manufacture of opto-electronic quantum well components is to provide as good a performance as possible; for example in light emitting components the aim is to achieve as high a luminosity, speed and good resistance against ambient conditions as possible. The manufacturing method selected for the quantum well components is decisive for these conditions. In prior art manufacturing methods, the film growth is performed in a semiconductor wafer that is cut exactly along the crystal direction [100]. It has been discovered that this crystal direction [100] is not necessarily the best possible direction, but the properties of the opto-electonic quantum well components can be improved by cutting the semiconductor wafer along a direction different from said crystal direction [100]. It is an aim of the present invention to improve the performance of an opto-electronic quantum well component compared to opto-electonic quantum well components of the prior art. The invention is based on the idea that on the surface of the quantum well component substrate, on which the film structure is formed, the crystal direction differs from the direction [100] and the film structure is formed using the SSMBE method. The opto-electronic quantum well component according to the present invention is characterized in, that
- on the surface of the quantum well component, on which the film stucture is formed, the crystal direction of the film structure differs from the direction [100], and
- the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
The method according to the present invention is characterized in, that
- on the surface of the quantum well component, on which the film stucture is formed, the crystal direction of the film structure differs from the direction ([100]), and
- the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
Considerable advantages are achieved by the present invention when compared with opto-electronic quantum well components of prior art. The angular cut of the invention can provide opto-electronic quantum well components having a significantly better coefficient of efficiency compared to the opto-electronic quantum well components of prior art, inter alia due to the fact that crystal errors can be eliminated even entirely or almost entirely by angular cutting. Moreover, the light emitting opto-electronic quantum well component of the invention produces a much higher luminosity than those provided by light emitting opto-electronic quantum well components of prior art.
In the following, the invention will be described in more detail with reference to the appended drawings, in which Fig. 1 shows a semiconductor bar of which the semiconductor wafers are manufactured, and
Fig. 2 shows an enlarged detail of a cross section illustrating a semiconductor wafer that is cut according to the invention and on which film layers are grown.
As it is well known, in the manufacture of semiconductor wafers 1 a semiconductor bar 2 is used that is formed of wished semiconductor material, such as gallium arsenide. The semiconductor bar 2 should be as clean as possible so that the resulting component would be of as good quality as possible. In the manufacturing method according to the invention semiconductor wafers 1 are cut from the semiconductor bar 2 in a manner that the crystal direction differs from the direction [100]. Fig. 1 illustrates inter alia this cristal direction with axes x, y, z. Moreover, in Fig. 1 a broken line 3 illustrates a section plane (100), and a solid line 4 illustrates a section plane that is applicable in the component of the invention and differs from the crystal plane (100). This difference can be from 1 to 20°. These crystal structures and crystal directions are described in more detail inter alia in the publication "Semiconductor physical electronics" Sheng S. Li, Plenum Press, New York, USA; ISBN 0-306-44157-8, which is referred to in this context.
When the semiconductor bar 2 is cut diagonally, the section is not even when examined microscopically, but it has a clear benching, which is determined by cristal directions. Fig. 2 presents in a reduced manner an enlarged cross-section of the semiconductor wafer 1. Here the benching is clearly visible. By cutting along the crystal direction [100] in accordance with the prior art, no such benching is developed.
Next, the diagonally cut semiconductor wafers are transferred to the first manufacturing step, wherein films are epitaxially grown onto the surface of the semiconductor wafers. The present invention utilizes the SSMBE method. In the growth process a necessary quantity of layers is formed onto the surface of the semiconductor wafer. The number of grown layers is dependent inter alia on the type of the manufactured component. The number of layers can be tens or even hundreds. A part of these layers is formed as so-called quantum well layers (quantum wells). An additional quantum barrier (potential barrier) is formed on both sides of such a quantum well layer. Using the method of the invention, the edges of these quantum barrier layers can be formed higher, which improves the trapping of the charge carriers in the quantum well layer. Fig. 2 illustrates two layers 5a, 5b that are grown onto the surface of the semiconductor wafer. This Fig. 2 shows that the layers are increasing on the benching planes. As a consequence, the layers are better fastened onto the surface of the semiconductor wafer and when the entire surface of the wafer is examined the layers are spreading relatively evenly. The layers are not necessarily formed evenly on the surface of a wafer cut along the direction [100] in accordance with prior art, but in some parts of the wafer the thickness of the layer can vary to a significant degree and therefore deteriorate the crystal quality of the resulting thin film.
When the necessary layers are grown on the surface of the semiconductor wafer 1 , the semiconductor wafer 1 is transferred to the second step, wherein the actual component structure is formed. It is known as such that a plurality of components is formed for one semiconductor wafer. In this second phase, different semiconductors are deposited onto the surface of the semiconductor wafer by using various maskings, and a part of the layers is etched away in order to provide a desired electrical coupling.
The method according to the invention is used for manufacturing opto- electronic components. Typically such opto-electronic components are characterized by a certain wave-length range. The present invention is applicable particularly for manufacturing opto-electronic components of the red spectrum range for the wave-length ranges 620 nm to 690 nm, but it is also applicable for longer wave-length ranges. When the opto-electronic components are manufactured onto the surface of the semiconductor wafer 1 , the semiconductor wafer 1 can be cut to separate different components from each other. Subsequently, the components are also cased, wherein the necessary wirings are also performed between the component and the external conductors fastened to the case in order to obtain a wished electrical coupling. Next, the cased component can advantageously be fastened by soldering to an electronic device.
Generally, it can be stated that the present invention is applied in connection with III to V compounds, and that the blend composition of the semiconductor material used in the manufacture of quantum well component is AlχGaγln1-x-γP, wherein 0=X=1 , 0=Y=1. The component can also include impure AlxGaγln1-x-γAszPι-z Distributed Bragg semiconductor mirrors (DBR) doped according to the n or p type (Si or Be). By using the semiconductor mirrors the quantum well component can be brought to emit light towards its substantially perpendicular surface. Without such mirror arrangement the light is emitted from the edges of the quantum well component. The above-mentioned structures are carried out in particular with the all-solid source molecular beam epitaxy method (SSMBE).
In addition to the quantum wells, the component that emits light from a substantially perpendicular surface of a component can also contain a micro-cavitation layer. This layer is undoped and composed of a semiconductor composition AlxGaγln1-x-γAszP1-Z) wherein 0=X=1 , 0=Y=1 , 0=Z=1. The cavity is limited by two Distributed Bragg semiconductor mirrors described above, one of which is limiting the cavity from above and the other from underneath. The quantum well or wells are situated at the antinode of the Fabry-Perot wave of the micro- cavity or in the immediate vicinity thereof. The wave of the quantum well is at the resonance or almost at the resonance with the Fabry- Perot well of the cavity, so that the quantum well would couple optically to the cavity as efficiently as possible. The present invention is not limited solely to the above-presented embodiments, but it can be modified within the scope of the appended claims.

Claims

Claims:
1. A quantum well component that transmits visible red light within the wave-length range of 620 to 690 nm (nanometers) at its edges or on its surface, which quantum well component is made of at least one AlxGaYln1-x-YP quantum well layer on the active range, in which 0=X=1 , 0=Y=1 , and comprises a substantially tabular substrate, on at least other surface of which there is vaporated a film structure having at least two layers, characterized in, that - on the surface of the quantum well component, on which the film stucture is formed, the crystal direction of the film structure differs from the direction ([100]), and - the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
2. The quantum well component according to claim 1 , characterized in that the substrate is manufactured of gallium arsenide (GaAs).
3. The quantum well component according to claims 1 or 2, characterized in that said surface level of the substrate differs to any crystal direction 1 to 20° in relation to the crystal direction ([100]).
4. The quantum well component according to claims 1 , 2 or 3, characterized in that it comprises AlxGaYln1-x-YAszP1-z Distributed Bragg semiconductor mirrors doped according to the n or p type.
5. The quantum well component according to any of claims 1 to 4, characterized in that on both sides of at least one quantum well layer there is formed an AlxGaYln1-x-YAszP1-z potential barrier layer, wherein 0=X=1 , 0=Y=1 and 0=Z=1 , to improve the trapping of charge carriers to the quantum wells and keeping them in the quantum well layer.
- A method for manufacturing a quantum well component that transmits visible red light inside the wave-length range of 620 to 690 nm (nanometers) at its edges or on its surface, in which method the quantum well component is made at least of one AlχGaγln1-x-γP quantum well layer on the active range, in which 0=X=1 , 0=Y=1 , and the quantum well component comprises substantially a sheet-like substrate, on at least other surface of which is vaporated a film structure with at least two layers, characterized in, that
- on the surface of the quantum well component, on which the film stucture is formed, the crystal direction of the film structure differs from the direction ([100]), and
- the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.
PCT/FI2001/000043 2000-01-21 2001-01-19 A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component WO2001054173A1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338633A (en) * 1992-12-17 1994-12-06 Sharp Corp Manufacture of ii-vi compound semiconductor thin film and ii-vi compound semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338633A (en) * 1992-12-17 1994-12-06 Sharp Corp Manufacture of ii-vi compound semiconductor thin film and ii-vi compound semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GIAN-LUCA BONA ET AL.: "(A1) GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates", pages 1126 *
M. PESSA ET AL.: "All-solid-source MBE growth of AlGaInAsp-based optoelectronic devices", 10TH INTERN. CONF. ON INDIUM PHOSPHIDE ...., May 1998 (1998-05-01), TSUKUBA, JAPAN, pages 474 *
PATENT ABSTRACTS OF JAPAN *

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