WO2001005719A1 - Methods for producing highly pure silicon dioxide glass and burner for carrying out this method - Google Patents

Methods for producing highly pure silicon dioxide glass and burner for carrying out this method Download PDF

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Publication number
WO2001005719A1
WO2001005719A1 PCT/EP2000/006657 EP0006657W WO0105719A1 WO 2001005719 A1 WO2001005719 A1 WO 2001005719A1 EP 0006657 W EP0006657 W EP 0006657W WO 0105719 A1 WO0105719 A1 WO 0105719A1
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Prior art keywords
burner
sicu
silicon dioxide
opening
carrying
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PCT/EP2000/006657
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German (de)
French (fr)
Inventor
Holger Schöne
Original Assignee
Linde Gas Aktiengesellschaft
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Priority to AU61589/00A priority Critical patent/AU6158900A/en
Publication of WO2001005719A1 publication Critical patent/WO2001005719A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C03B19/1423—Reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/10—Forming beads
    • C03B19/1005—Forming solid beads
    • C03B19/106—Forming solid beads by chemical vapour deposition; by liquid phase reaction
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413—Reactant delivery systems
    • C03B37/0142—Reactant deposition burners
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23D—BURNERS
    • F23D14/00—Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
    • F23D14/32—Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid using a mixture of gaseous fuel and pure oxygen or oxygen-enriched air
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/02—Elongated flat flame or slit-nozzle type
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/04—Multi-nested ports
    • C03B2207/06—Concentric circular ports
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/04—Multi-nested ports
    • C03B2207/12—Nozzle or orifice plates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/20—Specific substances in specified ports, e.g. all gas flows specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/20—Specific substances in specified ports, e.g. all gas flows specified
    • C03B2207/24—Multiple flame type, e.g. double-concentric flame
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/20—Specific substances in specified ports, e.g. all gas flows specified
    • C03B2207/26—Multiple ports for glass precursor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/42—Assembly details; Material or dimensions of burner; Manifolds or supports

Definitions

  • the invention relates to a method for producing pure silicon dioxide, wherein SiCU is heated by means of a burner and converted into silicon dioxide and HCl. Furthermore, the invention relates to a burner for carrying out this method
  • the energy required for this reaction to take place is supplied by externally mixing H 2 -0 2 burners.
  • the S 2 O 2 formed during the reaction is deposited on a support which is attached in the vicinity of the burner or burners.
  • the undesired by-product HCl is removed suctioned off the reaction space
  • the object of the present invention is therefore to demonstrate a method of the type mentioned at the outset which enables the production of pure SiO 2 in an economical and efficient manner
  • a premixing H 2 -O 2 burner is now used. This has a harder flame which transmits a high impulse to the gaseous S ⁇ CI 4. Furthermore, the premixing burner generates a hotter flame in comparison with an externally mixing burner, thereby reducing the reaction rate of the reaction SiCL »and water vapor in S ⁇ O 2 and HCl is greatly increased.
  • the inventive use of a premixing burner causes the generated S ⁇ O 2 to be thrown onto the carrier material with a high impulse.
  • the losses of S ⁇ O 2 that are extracted with the exhaust gas are reduced, and on the other hand, due to the high impulse, a much higher density of the product is produced porous SiO ⁇ material achieved on the carrier.
  • the invention thus increases both the quantity and the quality of the SiO 2 produced
  • the resulting silicon dioxide (SiO 2 ) is advantageously deposited on a rotating support.
  • the rotation of the support located in front of the burner head ensures a uniform layer of silicon dioxide on the support
  • the HCl produced as a by-product is advantageously sucked off. In contrast to the known process with external-mixing burners, this has none negative effects on the amount of SiCU used and the quantity of SiO 2 produced .
  • the reaction mixture is preferably heated with a water-cooled burner, particularly preferably with a water-cooled metal burner.
  • a water-cooled burner particularly preferably with a water-cooled metal burner.
  • the invention also relates to a burner for carrying out the method according to the invention, which is provided with a burner head with at least one outlet opening for SiCl 4 and several outlet openings for an H 2 -O 2 mixture.
  • the burner is designed such that the outlet openings for the H 2 O 2 mixture surround the outlet opening or the outlet openings for SiCI 4 in a ring, or that the outlet openings for SiCU are arranged in a row and the outlet openings for the H 2 -O 2 mixture are arranged in one or more rows parallel to the row of outlet openings for SiCU.
  • Both embodiments of the invention ensure that the SiCU and the SiO 2 are entrained by the high momentum of the H 2 -O 2 flame and are thrown onto the carrier. In this way, a high yield of SiO 2 is achieved with very good quality.
  • the invention is compared to the known methods on the
  • Carrier material generates a SiO 2 layer with a higher density, since the SiO 2 molecules are deposited on the support with a high momentum.
  • the pulse transmitted by the hard flame of the premixing H 2 -0 2 burner to the SiO 2 and SiCI 4 molecules in the direction of the carrier material ensures that the SiO 2 particles are deposited on the carrier before they are separated from the HCl exhaust gas flow are entrained.
  • the invention also enables a higher throughput, that is to say the conversion of a larger amount of SiCU to SiO 2 per unit of time. The latter is due in particular to the higher reaction speed according to the invention and the possibility of choosing a strong exhaust gas flow without the SiO 2 product being sucked off with this flow.
  • FIG. 1 shows a Si2 production process with an external mixing burner according to the prior art
  • FIG. 2 shows the method according to the invention
  • FIGS. 3 and 4 each show an embodiment of the burner head according to the invention
  • Silicon dioxide is produced both in the method according to the prior art and in the method according to the invention within a closed reaction space 1, to which a suction device 2 is connected.
  • Gaseous SiCU is introduced into the reaction space via a feed line 3, according to the known method shown in FIG
  • the SiCU supply line 3 is arranged in the burner head 4 of an externally mixing H 2 -O 2 burner.
  • the burner head 4 has oxygen supply lines 5 and hydrogen supply lines 6
  • the gases hydrogen and oxygen flowing out of the supply lines 5 and 6 are ignited and form a flame indicated by the lines 7.
  • the flame 7 supplies the energy required for the conversion of SiCU and H 2 O into S ⁇ O 2 and HCl.
  • This reaction S ⁇ 0 2 is deposited on the carrier 8 and forms a porous S ⁇ 0 2 -Sch ⁇ cht 9
  • the HCl also formed is sucked off from the reaction chamber 1 by means of the Absaugvor ⁇ chtung 2
  • the externally mixing burner 4 has a relatively soft and easily deflectable flame 7 generated by the suction device 2 exhaust gas. This causes a significant amount of gaseous SiCU starting material and S ⁇ O 2 product to be sucked off. The yield of S1O 2 9 accumulating on the carrier 8 becomes thereby significantly reduced
  • an already premixed H 2 - ⁇ 2 mixture is introduced via the feed lines 11 into the reaction space 1 and ignited there.
  • the premixing burner 14 thus has a hard flame directed towards the rotating support 9 The flame is also very hot and thus favors the chemical reaction taking place between the SiCU and the H 2 O.
  • the SiCU introduced into the reaction chamber 1 in the center of the flame 17 is thereby very quickly converted into the desired SiO -Product and HCl implemented
  • the SiCU or the resulting S ⁇ O 2 molecules experience a very high momentum transmission in the direction of the carrier 8 through the flame 7, so that they are hardly deflected by the exhaust gas flow of the suction device 2
  • the S ⁇ O 2 molecules thus hit at high speed onto the carrier 8 and form a porous SiO 2 layer 9 of very high density on it.
  • the HCl formed during the implementation of the SiCU is pumped out by means of the suction device 2
  • FIGS. 3 and 4 each show a preferred arrangement of the SiCU openings and the H 2 - ⁇ 2 gas mixture openings in the burner head.
  • the burner 20 shown in FIG. 3 is particularly suitable for smaller production quantities.
  • a SiCU discharge nozzle 21 is located centrally in the burner head 20 , which is surrounded concentrically by a ring of several mixed gas nozzles 22. Via the mixed gas nozzles 22, the premixed H 2 -O 2 gas mixture emerges from the burner and entrains the SiC 4 gas which emerges from the central opening 21
  • the burner shown in FIG. 4 is suitable for larger quantities of product, in particular for industrial production.
  • the burner head 30 shown is elongated and has a number of Si-outlet openings 31 in the longitudinal direction 32, from which the pre-mixed H 2 -0 2 gas mixture emerges.
  • the burner 30 thus enables the coating of a carrier 8, which also extends in the longitudinal direction of the burner head 30, with SiO 2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)

Abstract

The invention relates to a method for producing pure silicon dioxide. According to this method, SiCl4 is heated with a burner (4) and converted into silicon dioxide and HCl. The SiCl4 (3) is heated with a premixing (11) H2-O2 burner (4).

Description

Beschreibung description
VERFAHREN ZUR HERSTELLUNG VON HOCHREINEM SILZIUMDIOXID GLAS UND BRENNER ZUR DURCHFUHRUNG DES VERFAHRENSMETHOD FOR PRODUCING HIGH PURITY SILICON DIOXIDE GLASS AND BURNER FOR CARRYING OUT THE METHOD
Die Erfindung betrifft ein Verfahren zur Herstellung von reinem Sihziumdioxid, wobei SiCU mitteis eines Brenners erhitzt und in Sihziumdioxid und HCl umgesetzt wird Ferner bezieht sich die Erfindung auf einen Brenner zur Durchfuhrung dieses VerfahrensThe invention relates to a method for producing pure silicon dioxide, wherein SiCU is heated by means of a burner and converted into silicon dioxide and HCl. Furthermore, the invention relates to a burner for carrying out this method
An die Qualität von Quarzglas (SιO2), welches bei Lichtleitern beziehungsweise Glasfasern zur Anwendung kommt, werden hohe Anforderungen gestellt Zur Erzeugung von hierfür geeignetem reinem SιO2 wird in der Industrie meist dieHigh demands are placed on the quality of quartz glass (SιO 2 ), which is used in optical fibers or glass fibers, to produce pure SιO 2 suitable for this purpose
Hydrolyse von SιCI eingesetzt Bei diesem Verfahren wird SιCl gemäß der folgenden Reaktion umgesetzt
Figure imgf000003_0001
Hydrolysis of SiCl used In this process, SiCl is reacted according to the following reaction
Figure imgf000003_0001
Die für den Ablauf dieser Reaktion notwendige Energie wird durch außenmischende H2-02-Breπner zugeführt Das bei der Reaktion entstehende Sι02 schlagt sich auf einem Trager, der in der Nahe des beziehungsweise der Brenner angebracht ist, nieder Das unerwünschte Beiprodukt HCl wird aus dem Reaktionsraum abgesaugtThe energy required for this reaction to take place is supplied by externally mixing H 2 -0 2 burners. The S 2 O 2 formed during the reaction is deposited on a support which is attached in the vicinity of the burner or burners. The undesired by-product HCl is removed suctioned off the reaction space
Da HCl aus ökologischer Sicht beträchtliche Gefahrenpotentiale beinhaltet, ist stets für einen ausreichend starken Abgasstrom zum Absaugen des HCl zu sorgen Dies hat jedoch den Nachteil, daß zum Teil auch der Ausgangsstoff SiCU und insbesondere das Produkt Sι02 gemeinsam mit dem HCl abgesaugt werden Die Effizienz des gesamten Verfahrens wird dadurch deutlich geschmälertSince HCl contains considerable potential dangers from an ecological point of view, a sufficiently strong exhaust gas flow must always be provided to extract the HCl.However, this has the disadvantage that the SiCU starting material and in particular the Sι0 2 product are also extracted together with the HCl entire process is significantly reduced
Aufgabe vorliegender Erfindung ist es daher, ein Verfahren der eingangs genannten Art aufzuzeigen, welches auf wirtschaftliche und effiziente Weise die Herstellung von reinem SιO2 ermöglichtThe object of the present invention is therefore to demonstrate a method of the type mentioned at the outset which enables the production of pure SiO 2 in an economical and efficient manner
Diese Aufgabe wird erfindungsgemaß dadurch gelost, daß das SiCU mit einem vormischenden H2-θ2-Brenner erhitzt wird Die bisher eingesetzten außenmischenden Brenner besitzen eine weiche und leicht ablenkbare Flamme Dies hat zum einen den Nachteil, daß die obengenannte Reaktion von SiCU mit Wasserdampf langsam ablauft Die Ausgangsstoffe SιCI4 und H20 müssen daher relativ lange im Einflußbereich der Flamme des Brenners bleiben, um eine vollständige Umsetzung in Sι02 und HCl zu erzielen Aufgrund der aus Umweltgesichtspunkten notwendigen starken Abgasstromung wird jedoch die Brennerflamme leicht abgelenkt, was zur Folge hat, daß die Reaktionskinetik weiter verschlechtert wird und nicht umgesetztes SiCU sowie das gewünschte SιO2 mit dem Abgasstrom abgesaugt werdenThis object is achieved according to the invention in that the SiCU is heated with a premixing H 2 -θ 2 burner The externally mixing burner used to date have a soft and easily deflectable flame This has the disadvantage firstly that the above reaction of SiCl steam Expires slow the starting materials SιCI 4 and H 2 0 must therefore remain relatively long in the influence area of the flame of the burner To achieve a complete implementation in Sι0 2 and HCl Due to the strong exhaust gas flow required from an environmental point of view, however, the burner flame is slightly deflected, with the result that the reaction kinetics is further deteriorated and unreacted SiCU and the desired SιO 2 are extracted with the exhaust gas stream
Erfmduπgsgemaß wird nunmehr ein vormischender H2-O2-Brenner verwendet Dieser besitzt eine härtere Flamme, die einen hohen Impuls auf das gasformige SιCI4 übertragt Ferner erzeugt der vormischende Brenner im Vergleich mit einem außenmischenden Brenner eine heißere Flamme, wodurch die Reaktionsgeschwindigkeit der Umsetzung von SiCL» und Wasserdampf in SιO2 und HCl stark erhöht wird Durch die Kombination dieser beiden Merkmale, des hohen Impulsubertrages auf die SιCI4-Molekule und die hohe Reaktionsgeschwindigkeit, wird zum einen eine nahezu vollständige Umsetzung von SιCI4 in SιO2 erzielt und zum anderen das Absaugen von Sι02 gemeinsam mit dem HCl aus dem Reaktionsraum vermiedenAccording to the invention, a premixing H 2 -O 2 burner is now used. This has a harder flame which transmits a high impulse to the gaseous SιCI 4. Furthermore, the premixing burner generates a hotter flame in comparison with an externally mixing burner, thereby reducing the reaction rate of the reaction SiCL »and water vapor in SιO 2 and HCl is greatly increased. The combination of these two features, the high momentum transfer to the SιCI 4 molecules and the high reaction rate, results in an almost complete conversion of SιCI 4 into SιO 2 on the one hand and on the other the suction of Sι0 2 avoided together with the HCl from the reaction space
Durch die erfindungsgemaße Verwendung eines vormischenden Brenners wird das erzeugte SιO2 mit hohem Impuls an das Tragermateπal geschleudert Zum einen werden dadurch die Verluste von SιO2, die mit dem Abgas abgesaugt werden verringert, zum anderen wird durch den hohen Impuls eine deutlich höhere Dichte des produzierten porösen SiO∑-Mateπals auf dem Trager erreicht Durch die Erfindung wird somit sowohl die Quantität als auch die Qualltat des hergestellten SιO2 gesteigertThe inventive use of a premixing burner causes the generated SιO 2 to be thrown onto the carrier material with a high impulse. On the one hand, the losses of SιO 2 that are extracted with the exhaust gas are reduced, and on the other hand, due to the high impulse, a much higher density of the product is produced porous SiO ∑ material achieved on the carrier. The invention thus increases both the quantity and the quality of the SiO 2 produced
Von Vorteil wird das entstehende Sihziumdioxid (SιO2) auf einem rotierenden Trager niedergeschlagen Durch die Rotation des sich vor dem Brennerkopf befindenden Tragers wird eine gleichmaßige Sihziumdioxidschicht auf dem Trager sichergestelltThe resulting silicon dioxide (SiO 2 ) is advantageously deposited on a rotating support. The rotation of the support located in front of the burner head ensures a uniform layer of silicon dioxide on the support
Das als Beiprodukt entstehende HCl wird von Vorteil abgesaugt Dies hat, im Gegensatz zu dem bekannten Verfahren mit außenmischenden Brennern, keine negativen Auswirkungen auf die Einsatzmenge an SiCU und die Quantität des erzeugten SiO2.The HCl produced as a by-product is advantageously sucked off. In contrast to the known process with external-mixing burners, this has none negative effects on the amount of SiCU used and the quantity of SiO 2 produced .
Die Erhitzung des Reaktionsgemisches erfolgt bevorzugt mit einem wassergekühlten Brenner, besonders bevorzugt mit einem wassergekühlten etallbrenner. Für die bisher eingesetzten außenmischenden Brenner war es notwendig, diese aus hochwertigem und teurem Siliziumoxid herzustellen.The reaction mixture is preferably heated with a water-cooled burner, particularly preferably with a water-cooled metal burner. For the external mixing burners previously used, it was necessary to manufacture them from high-quality and expensive silicon oxide.
Die Erfindung bezieht sich auch auf einen Brenner zur Durchführung des erfindungsgemäßen Verfahrens, welcher mit einem Brenπerkopf mit mindestens einer Austrittsöffnung für SiCI4 und mehreren Austrittsöffnungen für ein H2-O2-Gemisch versehen ist.The invention also relates to a burner for carrying out the method according to the invention, which is provided with a burner head with at least one outlet opening for SiCl 4 and several outlet openings for an H 2 -O 2 mixture.
Erfindungsgemäß ist der Brenner so ausgeführt, daß die Austrittsöffnungen für das H2- O2-Gemisch die Austrittsöffnung oder die Austrittsöffnungen für SiCI4 ringförmig umgeben, oder daß die Austrittsöffnungen für SiCU in einer Reihe angeordnet sind und die Austrittsöffnungen für das H2-O2-Gemisch in einer oder mehreren parallel zu der Reihe der Austrittsöffnungen für SiCU liegenden Reihen angeordnet sind.According to the invention, the burner is designed such that the outlet openings for the H 2 O 2 mixture surround the outlet opening or the outlet openings for SiCI 4 in a ring, or that the outlet openings for SiCU are arranged in a row and the outlet openings for the H 2 -O 2 mixture are arranged in one or more rows parallel to the row of outlet openings for SiCU.
Beide erfindungsgemäßen Ausführungsformen gewährleisten, daß das SiCU und das SiO2 von dem hohen Impuls der H2-O2-Flamme mitgerissen und auf den Träger geschleudert werden. Auf diese Weise wird eine hohe Ausbeute an Siθ2 bei sehr guter Qualität erzielt.Both embodiments of the invention ensure that the SiCU and the SiO 2 are entrained by the high momentum of the H 2 -O 2 flame and are thrown onto the carrier. In this way, a high yield of SiO 2 is achieved with very good quality.
Durch die Erfindung wird im Vergleich zu den bekannten Verfahren auf demThe invention is compared to the known methods on the
Trägermaterial eine Siθ2-Schicht mit höherer Dichte erzeugt, da sich die SiO2-Moleküle mit hohem Impuls auf dem Träger niederschlagen. Der durch die harte Flamme des vormischenden H2-02-Brenners auf die SiO2- und die SiCI4-Moleküle übertragene Impuls in Richtung des Trägermaterials gewährleistet, daß sich die SiO2-Teilchen auf dem Träger niederschlagen, bevor sie von dem das HCl absaugenden Abgasstrom mitgerissen werden. Die Erfindung ermöglicht dadurch auch einen höheren Durchsatz, das heißt pro Zeiteinheit die Umsetzung einer größeren Menge an SiCU in SiO2. Letzteres ist insbesondere auf die erfindungsgemäß höhere Reaktionsgeschwindigkeit und auf die Möglichkeit, eine starke Abgasströmung zu wählen, ohne daß das SiO2- Produkt mit dieser Strömung abgesaugt wird, zurückzuführen. Die Erfindung sowie weitere vorteilhafte Einzelheiten der Erfindung sollen im folgenden anhand von in den Zeichnungen dargestellten Ausfuhrungsbeispielen naher erläutert werden Hierbei zeigenCarrier material generates a SiO 2 layer with a higher density, since the SiO 2 molecules are deposited on the support with a high momentum. The pulse transmitted by the hard flame of the premixing H 2 -0 2 burner to the SiO 2 and SiCI 4 molecules in the direction of the carrier material ensures that the SiO 2 particles are deposited on the carrier before they are separated from the HCl exhaust gas flow are entrained. As a result, the invention also enables a higher throughput, that is to say the conversion of a larger amount of SiCU to SiO 2 per unit of time. The latter is due in particular to the higher reaction speed according to the invention and the possibility of choosing a strong exhaust gas flow without the SiO 2 product being sucked off with this flow. The invention and further advantageous details of the invention will be explained in more detail below with reference to exemplary embodiments shown in the drawings
Figur 1 ein Sιθ2-Herstellungsverfahren mit einem außenmischenden Brenner gemäß dem Stand der Technik, Figur 2 das erfinduπgsgemaße Verfahren sowie die Figuren 3 und 4 jeweils eine Ausgestaltungsform des emndungsgemaßen Brennerkopfes1 shows a Si2 production process with an external mixing burner according to the prior art, FIG. 2 shows the method according to the invention and FIGS. 3 and 4 each show an embodiment of the burner head according to the invention
Die Herstellung Siliziumdioxids erfolgt sowohl bei dem Verfahren gemäß dem Stand der Technik als auch bei dem emndungsgemaßen Verfahren innerhalb eines geschlossenen Reaktionsraumes 1 , an den eine Absaugvorrichtung 2 angeschlossen ist Über eine Zufuhrleitung 3 wird gasformiges SiCU in den Reaktionsraum eingeleitet Gemäß dem in Figur 1 gezeigten bekannten Verfahren ist die SiCU-Zufuhrleitung 3 im Brennerkopf 4 eines außenmischenden H2-O2-Brenners angeordnet Der Brennerkopf 4 weist Sauerstoffzufuhrleitungen 5 und Wasserstoffzufuhrleitungen 6 aufSilicon dioxide is produced both in the method according to the prior art and in the method according to the invention within a closed reaction space 1, to which a suction device 2 is connected. Gaseous SiCU is introduced into the reaction space via a feed line 3, according to the known method shown in FIG The SiCU supply line 3 is arranged in the burner head 4 of an externally mixing H 2 -O 2 burner. The burner head 4 has oxygen supply lines 5 and hydrogen supply lines 6
Die aus den Zufuhrleitungen 5 und 6 ausströmenden Gase Wasserstoff und Sauerstoff werden gezündet und bilden eine durch die Linien 7 angedeutete Flamme Durch die Flamme 7 wird die für die Umsetzung von SiCU und H2O in SιO2 und HCl notwendige Energie geliefert Das bei dieser Reaktion entstehende Sι02 lagert sich auf dem Trager 8 ab und bildet eine poröse Sι02-Schιcht 9 Das ebenfalls entstehende HCl wird mittels der Absaugvorπchtung 2 aus dem Reaktionsraum 1 abgesaugtThe gases hydrogen and oxygen flowing out of the supply lines 5 and 6 are ignited and form a flame indicated by the lines 7. The flame 7 supplies the energy required for the conversion of SiCU and H 2 O into SιO 2 and HCl. This reaction Sι0 2 is deposited on the carrier 8 and forms a porous Sι0 2 -Schιcht 9 The HCl also formed is sucked off from the reaction chamber 1 by means of the Absaugvorπchtung 2
Der außenmischende Brenner 4 besitzt eine relativ weiche und durch die Absaugvorrichtung 2 erzeugte Abgasstromung leicht ablenkbare Flamme 7 Dadurch wird ein nicht geringer Teil an gasformigen SiCU-Ausgangsmateπal und an SιO2- Produkt abgesaugt Die sich auf dem Trager 8 ansammelnde Ausbeute an S1O2 9 wird dadurch deutlich vermindertThe externally mixing burner 4 has a relatively soft and easily deflectable flame 7 generated by the suction device 2 exhaust gas. This causes a significant amount of gaseous SiCU starting material and SιO 2 product to be sucked off. The yield of S1O 2 9 accumulating on the carrier 8 becomes thereby significantly reduced
Demgegenüber wird bei dem in Figur 2 gezeigten erfindungsgemaßen Verfahren ein bereits vorgemischtes H2-θ2-Gemιsch über die Zuleitungen 11 in den Reaktionsraum 1 eingeleitet und dort gezündet Der vormischende Brenner 14 besitzt damit eine sehr harte und auf den rotierenden Trager 9 gerichtete Flamme Die Flamme ist zudem sehr heiß und begünstigt somit die zwischen dem SiCU und dem H2O ablaufende chemische Reaktion Das im Zentrum der Flamme 17 in den Reaktionsraum 1 eingeleitete SiCU wird dadurch sehr schnell in das gewünschte SιO -Produkt und HCl umgesetzt Zudem erfahren die SiCU- beziehungsweise die entstehenden SιO2- Molekule durch die Flamme 7 einen sehr hohen Impulsubertrag in Richtung des Tragers 8, so daß diese kaum durch die Abgasstromung der Absaugvorπchtung 2 abgelenkt werden Die SιO2-Molekule treffen somit mit hoher Geschwindigkeit auf den Trager 8 und bilden auf diesem eine poröse SιO2-Schιcht 9 sehr hoher Dichte Das bei der Umsetzung des SiCU entstehende HCl wird mittels der Absaugvorπchtung 2 abgepumptIn contrast, in the process according to the invention shown in FIG. 2, an already premixed H 2 -θ 2 mixture is introduced via the feed lines 11 into the reaction space 1 and ignited there. The premixing burner 14 thus has a hard flame directed towards the rotating support 9 The flame is also very hot and thus favors the chemical reaction taking place between the SiCU and the H 2 O. The SiCU introduced into the reaction chamber 1 in the center of the flame 17 is thereby very quickly converted into the desired SiO -Product and HCl implemented In addition, the SiCU or the resulting SιO 2 molecules experience a very high momentum transmission in the direction of the carrier 8 through the flame 7, so that they are hardly deflected by the exhaust gas flow of the suction device 2 The SιO 2 molecules thus hit at high speed onto the carrier 8 and form a porous SiO 2 layer 9 of very high density on it. The HCl formed during the implementation of the SiCU is pumped out by means of the suction device 2
In den Figuren 3 und 4 ist jeweils eine bevorzugte Anordnung der SiCU-Offnungen sowie der H2-θ2-Gasgemιschoffnungen im Brennerkopf dargestellt Der in Figur 3 dargestellte Brenner 20 eignet sich insbesondere für kleinere Produktionsmengen Im Brennerkopf 20 befindet sich zentral eine SiCU Austπttsduse 21 , die konzentrisch von einem Ring von mehreren Mischgasdusen 22 umgeben ist Über die Mischgasdusen 22 tritt das vorgemischte H2-O2-Gasgemιsch aus dem Brenner aus und reißt das SιCI4- Gas, welches aus der zentralen Öffnung 21 austritt, mitFIGS. 3 and 4 each show a preferred arrangement of the SiCU openings and the H 2 -θ 2 gas mixture openings in the burner head. The burner 20 shown in FIG. 3 is particularly suitable for smaller production quantities. A SiCU discharge nozzle 21 is located centrally in the burner head 20 , which is surrounded concentrically by a ring of several mixed gas nozzles 22. Via the mixed gas nozzles 22, the premixed H 2 -O 2 gas mixture emerges from the burner and entrains the SiC 4 gas which emerges from the central opening 21
Der in Figur 4 gezeigte Brenner ist für größere Produktmengen, insbesondere für die Industrieproduktion geeignet Der gezeigte Brennerkopf 30 ist länglich ausgebildet und weist in Längsrichtung eine Reihe von SιCI -Austπttsoffnungen 31 auf Beiderseits dieser Reihe von SiCU-Dusen 31 befindet sich jeweils eine Reihe von Mischgasdusen 32, aus denen das vorgemischte H2-02-Gasgemιsch austritt Der Brenner 30 ermöglicht so die Beschichtuπg eines sich ebenfalls in Längsrichtung des Brennerkopfes 30 erstreckenden Tragers 8 mit SιO2 The burner shown in FIG. 4 is suitable for larger quantities of product, in particular for industrial production. The burner head 30 shown is elongated and has a number of Si-outlet openings 31 in the longitudinal direction 32, from which the pre-mixed H 2 -0 2 gas mixture emerges. The burner 30 thus enables the coating of a carrier 8, which also extends in the longitudinal direction of the burner head 30, with SiO 2

Claims

Patentansprüche claims
Verfahren zur Herstellung von reinem Sihziumdioxid, bei dem SiCU mittels eines Brenners erhitzt und in Sihziumdioxid und HCl umgesetzt wird, dadurch gekennzeichnet, daß das SiCU mit einem vormischenden H2-O2-Brenner (4) erhitzt wirdProcess for the production of pure silicon dioxide, in which SiCU is heated by means of a burner and converted into silicon dioxide and HCl, characterized in that the SiCU is heated with a premixing H 2 -O 2 burner (4)
Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß das entstehende Sihziumdioxid auf einem rotierenden Trager (8) niedergeschlagen wirdMethod according to claim 1, characterized in that the silicon dioxide formed is deposited on a rotating support (8)
Verfahren nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, daß das entstehende HCl abgesaugt wirdMethod according to one of claims 1 or 2, characterized in that the HCl formed is suctioned off
Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß das SiCU mit einem wassergekühlten Brenner (4) , bevorzugt einem wassergekühlten Metallbrenner, erhitzt wirdMethod according to one of claims 1 to 3, characterized in that the SiCU is heated with a water-cooled burner (4), preferably a water-cooled metal burner
Verfahren nach einem der Ansprüche 1 bis 4 zur Herstellung von Sihziumdioxid fürMethod according to one of claims 1 to 4 for the production of silicon dioxide for
Lichtleiteroptical fiber
Brenner zur Durchfuhrung des Verfahrens nach einem der Ansprüche 1 bis 5 mit einem Breππerkopf (20) mit mindestens einer Austπttsoffnung (21) für SiCU und mehreren Austπttsoffnungen (22) für ein H2-O2-Gemιsch, dadurch gekennzeichnet, daß die Austπttsoffnungen (22) für das H2-02-Gemιsch die Austπttsoffnung (21) oder die Austπttsoffnungen für SiCU ringförmig umgebenBurner for carrying out the method according to one of claims 1 to 5 with a Breππerkopf (20) with at least one opening opening (21) for SiCU and several opening openings (22) for a H 2 -O 2 mixture, characterized in that the opening openings ( 22) for the H 2 -0 2 mixture surround the opening (21) or the opening for SiCU in a ring
Brenner zur Durchfuhrung des Verfahrens nach einem der Ansprüche 1 bis 5 mit einem Brennerkopf (30) mit mindestens einer Austπttsoffnung (31) für SiCU und mehreren Austπttsoffnungen (32) für ein H2-02-Gemιsch, dadurch gekennzeichnet, daß die Austπttsoffnungen (31) für SiCU in einer Reihe angeordnet sind und daß die Austπttsoffnungen (32) für das H2-0 -Gemιsch in einer oder mehreren parallel zu der Reihe der Austπttsoffnungen (31) für SiCU liegenden Reihen angeordnet Burner for carrying out the method according to one of claims 1 to 5 with a burner head (30) with at least one outlet opening (31) for SiCU and several outlet openings (32) for an H 2 -0 2 mixture, characterized in that the outlet openings ( 31) for SiCU are arranged in a row and that the exit openings (32) for the H 2 -0 mixture are arranged in one or more rows parallel to the row of exit openings (31) for SiCU
PCT/EP2000/006657 1999-07-19 2000-07-12 Methods for producing highly pure silicon dioxide glass and burner for carrying out this method WO2001005719A1 (en)

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EP1106582A2 (en) * 1999-12-10 2001-06-13 Corning Incorporated Silica soot and process for producing it

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JPS57209841A (en) * 1981-06-22 1982-12-23 Hitachi Cable Ltd Burner for manufacturing optical fiber preform
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Publication number Priority date Publication date Assignee Title
EP1106582A2 (en) * 1999-12-10 2001-06-13 Corning Incorporated Silica soot and process for producing it
EP1106582A3 (en) * 1999-12-10 2001-10-24 Corning Incorporated Silica soot and process for producing it

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