WO2000072363A1 - Process for removing contaminant from a surface and composition useful therefor - Google Patents
Process for removing contaminant from a surface and composition useful therefor Download PDFInfo
- Publication number
- WO2000072363A1 WO2000072363A1 PCT/US2000/014181 US0014181W WO0072363A1 WO 2000072363 A1 WO2000072363 A1 WO 2000072363A1 US 0014181 W US0014181 W US 0014181W WO 0072363 A1 WO0072363 A1 WO 0072363A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acid
- composition
- fluoride
- weight
- copper
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 23
- 239000000356 contaminant Substances 0.000 title claims description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 49
- 239000010949 copper Substances 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 42
- 150000003839 salts Chemical class 0.000 claims abstract description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 21
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 23
- 235000015165 citric acid Nutrition 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- -1 fluoroborates Chemical compound 0.000 claims description 5
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- DAOANAATJZWTSJ-UHFFFAOYSA-N N-Decanoylmorpholine Chemical compound CCCCCCCCCC(=O)N1CCOCC1 DAOANAATJZWTSJ-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 150000004673 fluoride salts Chemical class 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 150000003335 secondary amines Chemical class 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 150000003512 tertiary amines Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 230000009977 dual effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 40
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 29
- 238000004140 cleaning Methods 0.000 description 27
- 239000013256 coordination polymer Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 239000012141 concentrate Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 238000009472 formulation Methods 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003995 emulsifying agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- MMCOUVMKNAHQOY-UHFFFAOYSA-N carbonoperoxoic acid Chemical compound OOC(O)=O MMCOUVMKNAHQOY-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C11D2111/22—
Definitions
- the present invention relates to an acidic aqueous composition that is especially useful for removing particulate and metallic contamination from a surface.
- the present invention is especially useful for removing particulate and metallic contaminants from structures such as those used as interconnect structures in integrated circuit devices such as semiconductor wafers containing copper damascene and dual damascene features .
- the structures treated according to the present invention include those that have been previously planarized by chemical mechanical polishing.
- the metallic interconnect material or wiring such as the copper or its alloys is typically planarized after deposition.
- Polishing slurries used for this planarization are typically aqueous suspensions comprised of a metal oxide abrasive (such as alumina) , organic acids, surfactants, and a suitable oxidizing agent.
- CMP chemical-mechanical polishing
- the oxidizing agent works to enhance mechanical removal of material via a corrosion assisted process.
- Such oxidizing agents employed in commercially-available or proprietary slurries are typically inorganic metal salts such as FeN0 3 , or KIO3, and also hydrogen peroxide, present in significant concentrations.
- Other chemicals added to slurries to improve dispersion or otherwise enhance performance often are organic acids (e.g. citric acid).
- Sodium, potassium, and iron salts and/or compounds are frequently used in slurry formulations, and significant amounts of these metal ion impurities can remain on the wafer after polishing and post-polish cleaning. Therefore, a tendency exists for various particulate contaminants to remain on the polished surface.
- the particulate materials are extremely difficult to remove. This is particularly problematic since the removal must not adversely affect the polished surface .
- polishing slurries typically contain an oxidizing agent
- an oxide layer usually is present on the copper due to oxidization of the copper during the CMP process. This layer may adversely affect the electrical characteristics of the device, and is preferably removed. In fact, this layer may also contribute to the contamination.
- the cleaning step removes any residual copper oxides and/or other non-desirable surface films, leaving a bare copper surface.
- the present invention related to an acidic aqueous solution that is especially for cleaning metallic/metal ion contaminants and especially metal and non-metal oxide particles remaining at or in the surface of a semiconductor wafer following CMP.
- the present invention is particularly useful for removing particulate contaminants from copper.
- the present invention also removes any residual oxide layer found on the copper surface without etching or increasing the surface roughness of the copper to any significant extent.
- the present invention relates to an aqueous composition comprising about 0.2% to about 5% by weight of a fluoride containing material, about 0.05% to about 1% by weight of at least one dicarboxylic acid, salt thereof or mixture thereof; about 0.2% to about 5% by weight of a hydroxycarboxylic acid, salt thereof or mixture thereof and the remainder being substantially water, and having a pH of about 3.0 to about 5.7.
- a further aspect of the present invention is concerned with a process for removing particulate contaminants from a copper surface after CMP planarization.
- the process comprises contacting a copper surface that has been planarized by CMP with an aqueous composition comprising a fluoride containing material; at least one dicarboxylic acid, salt thereof or mixtures thereof; and at least one hydroxycarboxylic acid, salt thereof, or mixture thereof , and having a pH of about 3.0 to about 5.7.
- a still further aspect of the present invention relates to a process for fabricating semiconductor integrated circuits.
- the process comprises forming circuits on the surface of a semiconductor wafer by photolithographic process wherein the circuits comprise copper or copper alloy; planarizing the surface by chemical mechanical polishing; and removing particulate and metallic (e.g. - metal ion) contaminants from the surface by contacting with an aqueous composition comprising fluoride containing material; at least one dicarboxylic acid, salt thereof or mixture thereof; and at least one hydroxy carboxylic acid, salt thereof or mixture thereof and having a pH of about 3.0 to about 5.7.
- the ideal cleaning process should reduce particulate and metallic contaminants on the wafer to the level present before the polishing step. Also, the cleaning process and chemistry must be compatible with the materials exposed on the wafer surface after CMP.
- the structures treated pursuant to the present invention are typically semiconductor devices having copper interconnects (lines, plugs, vias, global and local interconnects) imbedded into a low k dielectric material such as silicon dioxide, which may also include a capping layer, such as silicon nitride as in low k dielectric/damascene and dual damascene structures.
- a low k dielectric material such as silicon dioxide
- the silicon dioxide is typically a high density plasma deposited silicon dioxide or TEOS (tetraethylorthosilicate) .
- the copper interconnects typically use either tantalum, tantalum nitride, or titanium or titanium nitride as a barrier or liner material between the copper and the dielectric.
- the post-CMP cleaning solution is meant to clean up to four or more different materials, copper, the liner material, the dielectric or capping layer, as well as the wafer backside, which is generally a thin layer of oxidized silicon. All these types of materials are exposed on the surface of the semiconductor device during post-CMP cleaning. Accordingly, the cleaning composition must not adversely effect any of these materials to an undesired degree while still effectively removing the contaminants. This places considerable constraints upon developing a suitable composition.
- the copper is planarized after deposition by chemical mechanical polishing typically employing an aqueous slurry comprising an abrasive and an oxidizing agent.
- chemical mechanical polishing typically employing an aqueous slurry comprising an abrasive and an oxidizing agent.
- Such compositions are well known and need not be described in any detail herein. Examples of some chemical mechanical polishing slurries can be found in U.S. Patent No. 5,527,423 and U.S. patent No. 5,693,239, and PCT publication WO 97/43087, disclosures of which are incorporated herein by reference .
- the structure is then contacted with the aqueous composition according to the present invention.
- the composition comprises a fluoride containing material; at least one dicarboxylic acid and/or salt thereof; and at least one hydroxycarboxylic acid and/or salt thereof.
- Typical compounds providing a fluoride ion source according to the present invention are ammonium fluoride or hydrofluoric acid.
- Other compounds which may provide a source of fluoride ion include, for example, metal salts such as antimony (III/VI) fluoride, barium fluoride, tin (II) fluoride, aluminum (III) fluoride, and fluoroborate compounds.
- Still other sources of fluoride such as tetramethylammonium fluoride, as well as other organic compounds which could disassociate a fluoride ion in an aqueous media can be used.
- These other sources include fluoride salts of aliphatic primary, secondary, and tertiary amines. Such have the following formula:
- R ⁇ N(R 3 )R 2 wherein Ri, R 2 and R 3 each individually represents H or an alkyl group .
- the total number of carbon atoms in the Ri, R 2 and R 3 groups is 12 carbon atoms or less.
- the preferred fluoride compound is ammonium fluoride.
- Typical dicarboxylic acids include those having two to six carbon atoms, and include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid and fumaric acid.
- the preferred acid is malonic acid.
- Suitable salts include the alkali metal, alkaline earth metal and ammonium salts .
- hydroxycarboxylic acids examples include malic acid, tartaric acid and citric acid.
- the preferred hydroxycarboxylic acid is citric acid.
- Suitable salts include alkali metal, alkaline earth metal and ammonium salts.
- a preferred derivative is ammonium citrate.
- the composition can include minor amounts of a surface active agent. Suitable surface active agents include anionic, ca ionic, nonionic and zwitterionic compounds. Examples of some surfactants for use in the present invention are disclosed in, for example, Kirk-Othmer, Encyclopedia of Chemical Technology, 3rd Edi tion, Vol. 22 (John Wiley & Sons, 1983), Sislet & Wood, Encyclopedia of Surface Active Agents (Chemical Publishing Co., Inc.
- a typical example is an alkyl poly (ethylene oxide) non-ionic surfactant.
- compositions typically contain about 0.2 to 5 weight % and preferably about 0.4 to about 1.3 weight % of the fluoride containing compound.
- the dicarboxylic acid and/or salt is typically present in amounts of about 0.05 to about 1 weight %, and preferably about 0.05 to about 0.2 weight %.
- the hydroxycarboxylic acid is typically present in the composition at amounts of about 0.2% to about 5% by weight and preferably about 0.5 to about 2% by weight.
- the level of surface active agent in the composition is typically between about 50 and about 3,000 ppm, a specific example being about 500 ppm.
- compositions of the present invention have a pH of about 3.0 to about 5.7 and preferably about 3.5 to about 5.4, a particular example being about 4.0.
- the pH is typically measured using pH paper or suitable pH reference electrode. It has been discovered according to the present invention that the pH is important in achieving objectives of the present invention.
- the compositions are capable of removing metallic and non-metallic particulate oxides, as well as silicon dioxide; metal ion contaminants such as K, Ca, Ti, Cr, Mn, Fe, Ni , Cu and Zn; various sulfur and chloride impurities adsorbed on the various surface materials present on the wafer.
- CuO is thermodynamically unstable within the pH range of the compositions of the present invention. The removal is achieved while only slightly etching the metallic copper such as less than 5 angstrom/minute and etching dielectric such as high density plasma deposited silicon oxides or TEOS at less than about 20 A/min.
- Some etching of the dielectric such as about 10 A/min. to about 20 A/min occurs during the cleaning process of the present invention.
- the slight etching results in undercutting of particles strongly adsorbed on the wafer surface, which assists in their removal.
- the slight etching also acts to assist in removal of adsorbed metal ion contaminants incorporated at shallow depths in the dielectric layer.
- compositions of the present invention do not increase the surface roughness of the copper to any significant extent.
- AFM surface roughness (RMS) of copper on a blank copper film was 1.2 nanometers.
- RMS surface roughness
- RMS nanometers
- a further feature of the present invention is that the composition even in concentrated form is relatively stable. For instance, concentrates of the composition comprising about 1 to about 20% by weight of the fluoride containing compound, about 1 to about 30% by weight of the hydroxycarboxylic acid, about 1 to about
- 10% by weight of the dihydroxy carboxylic acid and about 30 to about 50% by weight of water can be provided and transported to the end user, the user can then dilute it such as about a 19:1 dilution by weight at the process tool for convenience and for economical reasons.
- the composition can be used in a double sided brush scrubber to clean whole wafers following a copper CMP polishing step. Moreover, such can be used in a megasonic bath or spray tool cleaning apparatus, or combination thereof.
- Example 1 A concentrate comprising about 960 grams of citric acid, about 80 grams of malonic acid, about 1,600 grams of 40% aqueous solution of ammonium fluoride, and about 1,360 grams of deionized water is prepared. The concentrate is then diluted 19:1 (by weight) with deionized water to formulate an aqueous cleaning mixture containing about 1.2 weight % of citric acid, about 0.1 weight % of malonic acid, about 2 weight % of 40% ammonium fluoride and about 96.7 weight % of water. The composition has pH of about 4.0 as measured using a calibrated antimony reference electrode or pH paper.
- Wafers having copper lines imbedded into silicon dioxide and lines with a liner material are first subjected to CMP employing an aqueous slurry comprising about 2% by weight alumina, about 3% by weight of H 2 0 2 , with the remainder being water and minor additives. After the CMP, the wafers are contacted with the above aqueous cleaning mixture.
- Example 2 In a cleaning experiment, 25 as-deposited TEOS coated wafers and 25 as-deposited copper coated wafers are pre-read for particle counts on the wafer surface using a Tencor 6420 light point defect (LPD) counter at
- the wafers are then split up into two batches of 13 TEOS/12 copper and 12 TEOS/13 copper. Within each group, the TEOS wafers and copper wafers are alternated in a 25 wafer cassette.
- the wafers are then dipped in Cabot 4110 alumina based slurry for 1 minute and buffed in DI water for 15 seconds. Immediately after the dip and buff step, the wafers are transferred to the Ontrak Synergy double sided brush scrubber cleaning tool . The wafers are cleaned using a flow rate of 500 ml/minute of a cleaning solution prepared according to Example 1 with a brush scrub cleaning time of 45 seconds in the first box, and 10 seconds in the second box. Finally, a 30 second DI spin rinse and blow dry to finish the clean.
- the wafers are again inspected for particles using the Tencor LPD counter.
- Table 1 presents the data obtained from the pre- and post-clean particle counts from the above tests. It may be seen that there is almost no adder particles at the _> 0.2 ⁇ m level for both TEOS and copper wafers.
- the averaged adder particles for TEOS is -2.4 +/- 10.
- the averaged adder particles for copper is -185.1 +/- 155. It should be noted that the negative number of adders for the copper wafers is due to the fact that these as- deposited copper wafers might not be as clean as possible prior to the test.
- Table 2 presents the TXRF data from the analysis on wafer frontside or backside. This is to check if there is metal cross-contamination between copper and TEOS wafers, as well as metal contaminant removal performance on the wafer backside.
- the TXRF analysis indicates metal levels at or below detection limits, except for K on the frontside.
- the K might be deeply embedded in the TEOS surface and thus hard to remove.
- the low level of metal contamination indicates that there is no metal cross- contamination between copper and TEOS wafers via the brush. In addition, there is no contamination to the wafer backside during the clean.
- a concentrate containing 960 grams of citric acid, about 80 grams of malonic acid, about 1600 grams of 40% aqueous ammonium fluoride, and about 1360 grams of deionized water is prepared.
- the concentrate is then diluted 19:1 (by weight) with deionized water to formulate a mixture containing about 1.2 weight % citric acid, about 0.1 weight % of malonic acid, about 2 weight % of 40% ammonium fluoride and about 96.7 weight % of water.
- the composition has a pH of about 4 as measured using a calibrated antimony reference electrode or pH paper.
- a concentrate containing 480 grams of citric acid, about 80 grams of malonic acid, about 1600 grams of 40% aqueous ammonium fluoride, and about 1840 grams of deionized water is prepared.
- the concentrate is then diluted 19:1 (by weight) with deionized water to formulate a mixture containing about 0.6 weight % citric acid, about 0.1 weight % of malonic acid, about 2 weight % of 40% ammonium fluoride and about 97.3 weight % of water.
- the composition has a pH of about 4 as measured using a calibrated antimony reference electrode or pH paper .
- a concentrate containing 480 grams of citric acid, about 80 grams of malonic acid, about 800 grams of 40% aqueous ammonium fluoride, and about 2640 grams of deionized water is prepared.
- the concentrate is then diluted 19:1 (by weight) with deionized water to formulate a mixture containing about 0.6 weight % citric acid, about 0.1 weight % of malonic acid, about 1 weight % of 40% ammonium fluoride and about 98.3 weight % of water.
- the composition has a pH of about 4 as measured using a calibrated antimony reference electrode or pH paper.
- Wafers having copper lines embedded into a substrate also having TEOS (tetraethylorthosilicate) lines are first subjected to CMP employing an aqueous slurry comprising about 5% silica and the remainder being water and minor additives. After the CMP, the wafers are contacted with the above aqueous cleaning mixtures .
- TEOS tetraethylorthosilicate
- the etch rate of the TEOS lines using the unmodified CP 60 is between about 57 to 66 angstroms per minute.
- the citric acid level is reduced by 50% in the formulation [CP 60 RCA]
- the etch rate of TEOS lines ranges from about 43 to 67 angstroms per minute. Reducing citric acid level by half does not have an impact on the TEOS etch rate.
- both the citric acid level and the ammonium fluoride level in the unmodified CP 60 formulation are reduced by half [CP 60 RCA RF] , the TEOS etch rate drops to about 10 to 23 angstroms per minute. This lower etch rate for TEOS lines is desirable when the target TEOS etch rate is specified between 10 and 20 angstroms per minute.
- Atomic force microscopy scans were taken across TEOS lines with either 1) 6.0 urn pitch, 2.0 urn copper linewidth, 4 urn TEOS linewidth; or 2) 2.0 urn pitch, 0.5 urn copper linewidth, 1.5 urn TEOS linewidth.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000620663A JP2003500527A (en) | 1999-05-26 | 2000-05-23 | Method for removing contaminants from surfaces and compositions useful therefor |
IL14673300A IL146733A (en) | 1999-05-26 | 2000-05-23 | Process for removing contaminant from a surface and composition useful therefor |
EP00936223A EP1196943A4 (en) | 1999-05-26 | 2000-05-23 | Process for removing contaminant from a surface and composition useful therefor |
AU51571/00A AU5157100A (en) | 1999-05-26 | 2000-05-25 | Process for removing contaminant from a surface and composition useful therefor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/318,814 | 1999-05-26 | ||
US09/318,814 US6147002A (en) | 1999-05-26 | 1999-05-26 | Process for removing contaminant from a surface and composition useful therefor |
US09/533,114 | 2000-03-22 | ||
US09/533,114 US6673757B1 (en) | 2000-03-22 | 2000-03-22 | Process for removing contaminant from a surface and composition useful therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000072363A1 true WO2000072363A1 (en) | 2000-11-30 |
Family
ID=26981682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/014181 WO2000072363A1 (en) | 1999-05-26 | 2000-05-23 | Process for removing contaminant from a surface and composition useful therefor |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1196943A4 (en) |
JP (1) | JP2003500527A (en) |
KR (1) | KR100672874B1 (en) |
CN (1) | CN1158691C (en) |
AU (1) | AU5157100A (en) |
IL (1) | IL146733A (en) |
TW (1) | TW463256B (en) |
WO (1) | WO2000072363A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100867A (en) * | 2001-09-26 | 2003-04-04 | Fujitsu Ltd | Method for manufacturing semiconductor device and cleaning liquid therefor |
EP1544324A1 (en) * | 2002-08-19 | 2005-06-22 | Merk-Kanto Advanced Chemical Ltd. | Remover solution |
JP2005532423A (en) * | 2002-04-25 | 2005-10-27 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | Non-corrosive cleaning composition for removing etching residues |
EP1826260A1 (en) * | 2006-02-24 | 2007-08-29 | Lee, Gi-Won | Cleaning composition for removing impurities and method of removing impurities using the same |
EP1944355A1 (en) * | 2007-01-11 | 2008-07-16 | Air Products and Chemicals, Inc. | Cleaning composition for semiconductor substrates |
US7524801B2 (en) | 2001-06-29 | 2009-04-28 | Air Products And Chemicals, Inc. | Process for removing contaminant from a surface and composition useful therefor |
EP2626891A3 (en) * | 2012-02-07 | 2018-01-24 | Rohm and Haas Electronic Materials LLC | Activation process to improve metal adhesion |
US11560533B2 (en) | 2018-06-26 | 2023-01-24 | Versum Materials Us, Llc | Post chemical mechanical planarization (CMP) cleaning |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040029494A1 (en) * | 2002-08-09 | 2004-02-12 | Souvik Banerjee | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
CN102792431B (en) * | 2009-12-23 | 2016-04-27 | 朗姆研究公司 | Post-depositional chip cleaning formula |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477364A (en) * | 1983-11-07 | 1984-10-16 | Capetrol International, Inc. | Acidic glass cleaning composition |
US5662769A (en) * | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6296714B1 (en) * | 1997-01-16 | 2001-10-02 | Mitsubishi Materials Silicon Corporation | Washing solution of semiconductor substrate and washing method using the same |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
US6165956A (en) * | 1997-10-21 | 2000-12-26 | Lam Research Corporation | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
-
2000
- 2000-05-23 WO PCT/US2000/014181 patent/WO2000072363A1/en active IP Right Grant
- 2000-05-23 JP JP2000620663A patent/JP2003500527A/en not_active Withdrawn
- 2000-05-23 EP EP00936223A patent/EP1196943A4/en not_active Withdrawn
- 2000-05-23 IL IL14673300A patent/IL146733A/en not_active IP Right Cessation
- 2000-05-23 KR KR1020017015034A patent/KR100672874B1/en not_active IP Right Cessation
- 2000-05-23 CN CNB008080917A patent/CN1158691C/en not_active Expired - Fee Related
- 2000-05-25 AU AU51571/00A patent/AU5157100A/en not_active Abandoned
- 2000-07-03 TW TW089110192A patent/TW463256B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477364A (en) * | 1983-11-07 | 1984-10-16 | Capetrol International, Inc. | Acidic glass cleaning composition |
US5662769A (en) * | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
Non-Patent Citations (1)
Title |
---|
See also references of EP1196943A4 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7524801B2 (en) | 2001-06-29 | 2009-04-28 | Air Products And Chemicals, Inc. | Process for removing contaminant from a surface and composition useful therefor |
US7700534B2 (en) | 2001-06-29 | 2010-04-20 | Air Products And Chemicals, Inc. | Process for removing contaminant from a surface and composition useful therefor description |
JP2003100867A (en) * | 2001-09-26 | 2003-04-04 | Fujitsu Ltd | Method for manufacturing semiconductor device and cleaning liquid therefor |
JP4583678B2 (en) * | 2001-09-26 | 2010-11-17 | 富士通株式会社 | Semiconductor device manufacturing method and semiconductor device cleaning solution |
US7935665B2 (en) | 2002-04-25 | 2011-05-03 | Fujifilm Electronic Materials U.S.A., Inc. | Non-corrosive cleaning compositions for removing etch residues |
JP2005532423A (en) * | 2002-04-25 | 2005-10-27 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | Non-corrosive cleaning composition for removing etching residues |
EP1544324A4 (en) * | 2002-08-19 | 2005-11-09 | Merk Kanto Advanced Chemical L | Remover solution |
EP1544324A1 (en) * | 2002-08-19 | 2005-06-22 | Merk-Kanto Advanced Chemical Ltd. | Remover solution |
EP1826260A1 (en) * | 2006-02-24 | 2007-08-29 | Lee, Gi-Won | Cleaning composition for removing impurities and method of removing impurities using the same |
EP1944355A1 (en) * | 2007-01-11 | 2008-07-16 | Air Products and Chemicals, Inc. | Cleaning composition for semiconductor substrates |
US7879783B2 (en) | 2007-01-11 | 2011-02-01 | Air Products And Chemicals, Inc. | Cleaning composition for semiconductor substrates |
EP2626891A3 (en) * | 2012-02-07 | 2018-01-24 | Rohm and Haas Electronic Materials LLC | Activation process to improve metal adhesion |
US11560533B2 (en) | 2018-06-26 | 2023-01-24 | Versum Materials Us, Llc | Post chemical mechanical planarization (CMP) cleaning |
Also Published As
Publication number | Publication date |
---|---|
KR100672874B1 (en) | 2007-01-24 |
CN1360733A (en) | 2002-07-24 |
TW463256B (en) | 2001-11-11 |
EP1196943A4 (en) | 2007-01-17 |
JP2003500527A (en) | 2003-01-07 |
IL146733A (en) | 2005-07-25 |
EP1196943A1 (en) | 2002-04-17 |
KR20020030743A (en) | 2002-04-25 |
IL146733A0 (en) | 2002-07-25 |
CN1158691C (en) | 2004-07-21 |
AU5157100A (en) | 2000-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6147002A (en) | Process for removing contaminant from a surface and composition useful therefor | |
US7700534B2 (en) | Process for removing contaminant from a surface and composition useful therefor description | |
EP1715510B2 (en) | Substrate cleaning liquid for semiconductor device and cleaning method | |
US6423148B1 (en) | Substrate-cleaning method and substrate-cleaning solution | |
US7468105B2 (en) | CMP cleaning composition with microbial inhibitor | |
US6635186B1 (en) | Chemical mechanical polishing composition and process | |
EP1888735B1 (en) | Copper passivating post-chemical mechanical polishing cleaning composition and method of use | |
JP4736445B2 (en) | Substrate cleaning solution for semiconductor device and cleaning method | |
EP1363321B1 (en) | Post-CMP washing liquid composition | |
US6673757B1 (en) | Process for removing contaminant from a surface and composition useful therefor | |
WO2000072363A1 (en) | Process for removing contaminant from a surface and composition useful therefor | |
US20040140288A1 (en) | Wet etch of titanium-tungsten film | |
JP2009076716A (en) | Method for cleaning substrate and method for manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 00808091.7 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020017015034 Country of ref document: KR |
|
ENP | Entry into the national phase |
Ref document number: 2000 620663 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2000936223 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 2000936223 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020017015034 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1020017015034 Country of ref document: KR |