WO2000036636A3 - Capacitor electrode - Google Patents

Capacitor electrode Download PDF

Info

Publication number
WO2000036636A3
WO2000036636A3 PCT/DE1999/003926 DE9903926W WO0036636A3 WO 2000036636 A3 WO2000036636 A3 WO 2000036636A3 DE 9903926 W DE9903926 W DE 9903926W WO 0036636 A3 WO0036636 A3 WO 0036636A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxygen
conductive layer
microelectronic structure
capacitor electrode
sensitive structures
Prior art date
Application number
PCT/DE1999/003926
Other languages
German (de)
French (fr)
Other versions
WO2000036636A2 (en
Inventor
Hermann Wendt
Gerhard Beitel
Hans Reisinger
Original Assignee
Infineon Technologies Ag
Hermann Wendt
Gerhard Beitel
Hans Reisinger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Hermann Wendt, Gerhard Beitel, Hans Reisinger filed Critical Infineon Technologies Ag
Publication of WO2000036636A2 publication Critical patent/WO2000036636A2/en
Publication of WO2000036636A3 publication Critical patent/WO2000036636A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

The aim of the invention is to create a microelectronic structure which prevents oxidation of oxygen-sensitive structures (25). To this end, the microelectronic structure is provided with a conductive layer (10) consisting of a platinum iridium alloy. The iridium should hamper the oxygen diffusion through the conductive layer (10) by binding the oxygen when the microelectronic structure is treated in a oxygen-containing atmosphere. Oxidation-sensitive structures (25) are thus protected underneath the conductive layer (10).
PCT/DE1999/003926 1998-12-17 1999-12-08 Capacitor electrode WO2000036636A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1998158357 DE19858357A1 (en) 1998-12-17 1998-12-17 Microelectronic structure and process for its production
DE19858357.5 1998-12-17

Publications (2)

Publication Number Publication Date
WO2000036636A2 WO2000036636A2 (en) 2000-06-22
WO2000036636A3 true WO2000036636A3 (en) 2000-08-10

Family

ID=7891495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/003926 WO2000036636A2 (en) 1998-12-17 1999-12-08 Capacitor electrode

Country Status (3)

Country Link
DE (1) DE19858357A1 (en)
TW (1) TW440899B (en)
WO (1) WO2000036636A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3581904B1 (en) 2018-06-15 2021-06-02 Melexis Technologies NV Platinum metallisation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609081A2 (en) * 1993-01-27 1994-08-03 Texas Instruments Incorporated Improved electrical connections to dielectric materials
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
JPH10173138A (en) * 1996-12-11 1998-06-26 Fujitsu Ltd Semiconductor memory and its manufacture
JPH10242399A (en) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd High-dielectric capacitor and its manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
KR100200299B1 (en) * 1995-11-30 1999-06-15 김영환 Method for manufacturing capacitor of semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609081A2 (en) * 1993-01-27 1994-08-03 Texas Instruments Incorporated Improved electrical connections to dielectric materials
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JPH10173138A (en) * 1996-12-11 1998-06-26 Fujitsu Ltd Semiconductor memory and its manufacture
US5905278A (en) * 1996-12-11 1999-05-18 Fujitsu Limited Semiconductor device having a dielectric film and a fabrication process thereof
JPH10242399A (en) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd High-dielectric capacitor and its manufacturing method
US5892254A (en) * 1997-02-27 1999-04-06 Samsung Electronics Co., Ltd. Integrated circuit capacitors including barrier layers having grain boundary filling material

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 11 30 September 1998 (1998-09-30) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) *

Also Published As

Publication number Publication date
WO2000036636A2 (en) 2000-06-22
TW440899B (en) 2001-06-16
DE19858357A1 (en) 2000-06-29

Similar Documents

Publication Publication Date Title
WO2002067302A3 (en) Rhodium-rich oxygen barriers
EP1852893A3 (en) Capacitor and method of manufacturing the same
DE60022656D1 (en) ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD
EP0822603A3 (en) Bilayer electron-injecting electrode for use in an electroluminescent device
EP0797233A3 (en) Thin-film electron emitter device and application equipment using the same
CA2403897A1 (en) Surface treated electrically conductive metal element and method of forming same
EP1431288A3 (en) Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
WO2005089391A3 (en) Battery and method of manufacturing the same
BG103712A (en) Lipophilic inert gas-containing medicamentous preparation
CA2159352A1 (en) Method of treating water
CA2117231A1 (en) Substrate for a sintered electrode
WO2001095376A3 (en) Methods for forming rough ruthenium-containing layers and structures/methods using same
EP1986295A3 (en) Conductive element with lateral oxidation barrier
CA2459574A1 (en) Solid oxide fuel cell
EP2249413A3 (en) Support and organic electroluminescence element comprising the support
CA2241676A1 (en) Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
CA2375643A1 (en) Exothermic topical delivery device
GB9926975D0 (en) Solid state capacitors and methods of manufacturing them
WO2003032417A3 (en) Method for producing gas diffusion electrodes
WO2002084272A3 (en) Pair of measuring electrodes, biosensor comprising such a pair of measuring electrodes and method for the production thereof
TW200715470A (en) Semiconductor structure and integrated circuit
WO2002054484A3 (en) Metal ion diffusion barrier layers
DE59908333D1 (en) Shaped bodies made of an electrically conductive ceramic and method for producing contact areas on such shaped bodies
WO2002054457A3 (en) Multi-layer pt electrode for dram and fram with high k dielectric materials
WO2000036636A3 (en) Capacitor electrode

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: A3

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase