WO2000019521A1 - Chuck with integrated piezoelectric sensors for wafer detection - Google Patents
Chuck with integrated piezoelectric sensors for wafer detection Download PDFInfo
- Publication number
- WO2000019521A1 WO2000019521A1 PCT/US1999/022036 US9922036W WO0019521A1 WO 2000019521 A1 WO2000019521 A1 WO 2000019521A1 US 9922036 W US9922036 W US 9922036W WO 0019521 A1 WO0019521 A1 WO 0019521A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor wafer
- chuck
- electricity
- support surface
- piezoelectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Definitions
- a J-R electrostatic chuck comprises electrodes embedded in a body of ceramic material that is semiconductive, typically an alumina- titanium oxide compound or aluminum nitride, and when a voltage is applied between the electrodes, a semiconductor wafer, such as a silicon semiconductor wafer, is electrostatically attracted to the electrostatic chuck according to the Johnsen- Rahbek effect, i.e., charges migrate to the backside of the wafer and charges migrate from the electrode (s) to the surface of the chuck such that a very strong electrostatic force appears across the. interstitial spaces separating the wafer and chuck surface.
- Such electrostatic chucks are used in a semiconductor wafer processing systems to support a semiconductor wafer as integrated circuits are produced in the wafer.
- the present invention interposes one or more piezoelectric sensors, between a semiconductor wafer and a semiconductor wafer chuck.
- the piezoelectric sensor When the semiconductor wafer is chucked to the chuck, the piezoelectric sensor is compressed and the sensor produces electricity piezoelectrically .
- the piezoelectrically produced electricity is detected and a signal is produced to indicate the presence of the wafer on the chuck.
- FIG. 2 is a partial cross-sectional view taken generally along the line 2-2 in FIG. 1 in the direction of the arrows;
- FIG. 4 is a plan view of an electrostatic chuck whose support surface is provided with a wafer spacing mask
- semiconductor wafer detection apparatus embodying the present invention is shown and indicated by general numerical designation 10.
- Apparatus 10 is shown for use in conjunction with a substrate support chuck 12 including a support surface 14; the electrostatic chuck 12 may be of the type described above. It will be understood that while the present invention is shown in conjunction with the electrostatic chuck 12, the present invention may be used with any form of chuck including ceramic electrostatic chucks, non- ceramic electrostatic chucks, bi-polar electrostatic chucks, monopolar electrostatic chucks, mechanical chucks, vacuum chucks and the like. Generally speaking, the present invention can be used with any form of clamping device designed to retain a wafer upon the surface of a pedestal. An electrostatic chuck is merely one illustrative example of such a clamping device.
- the piezoelectric sensors may comprise a lower layer 24 and an upper layer 25 of titanium (Ti) and an intermediate layer 26 of zinc dioxide (Zn0 2 ) .
- the layers of titanium and zinc dioxide- comprising the piezoelectric sensor 18 may be deposited on the support surface 14 of the electrostatic chuck 12 by physical vapor deposition and may have a cumulative thickness of approximately 13-70 ⁇ .
- the deposition occurs via a mask or similar plate placed over the support surface.
- An exemplary mask and deposition technique is discussed in commonly assigned U.S. patent application serial no. 08/736,887 filed October 25, 1996. Although that application teaches titanium as a preferred material for the mask, other materials are taught such as ceramic (aluminum nitride) .
- Ceramic is a preferred material for use in creating the piezoelectric sensors of the subject invention.
- the lower layer 24 is first deposited to a thickness of about 1-9 ⁇ .
- the intermediate layer 26 is deposited over the lower layer 24 to a thickness of about 11-50 ⁇ m.
- the upper layer 25 is deposited over the intermediate layer 26 to a thickness of about 1-9 ⁇ .
- titanium is discussed as a preferred material for the upper and lower layers, 24 and 25 respectively, any commonly available material that is easily deposited and adhered to the support surface 14 and is compatible for use in an ultra-high vacuum (UHV) environment is suitable. Such materials may be selected from but are not limited to the group consisting of copper, titanium nitride, tantalum and tungsten.
- zinc dioxide is discussed as a preferred material for the intermediate layer 26, any commonly available material classified as having piezoelectric characteristics and capable of producing a current via the piezoelectric effect or its equivalents is suitable.
- the sensors are integral with the support surface and project a distance above the plane of contact between the wafer and chuck. As such, and upon chucking of the wafer, the sensors are compressed by the distance or a portion thereof by which they extend above the plane of contact which is sufficient to generate a viable piezoelectric signal (explained in greater detail below) and the substrate 42 is still supported above the support surface
- the semiconductor wafer 42 will engage and compress the piezoelectric sensors, e.g. representative piezoelectric sensor
- the predetermined or threshold level T is predetermined as the level that is produced upon the strength of the chucking force being sufficient to maintain the wafer on the chuck during subsequent semiconductor wafer processing. Accordingly, upon all three piezoelectric sensors being compressed sufficiently by the above-described semiconductor wafer chucking action, all three sensors produce electricity at least equal to the predetermined or threshold level T and all three peak detectors 31, 32 and 33 provide output signals to the comparator 40. The output signals are received by a suitable internal circuit of the type known to the art for providing a comparator output signal indicated by arrow 44. This comparator output signal is indicative of an adequate amount of chucking force being applied to the semiconductor wafer by the electrostatic chuck to enable further semiconductor wafer processing.
- the apparatus 10 of the present invention may be embodied to detect only the presence of a semiconductor wafer on the chuck 12.
- the comparator 40 FIG. 1, may be provided with an internal circuit of the type known to the art for receiving an output signal from all or any one of the peak detectors 31, 32 and 33 and, upon a signal being produced by any one of such peak detectors, the comparator provides an output signal indicated by the arrow 42 indicative of a semiconductor wafer being present on the semiconductor chuck.
- the present apparatus and method inventions may be embodied to detect the presence of a semiconductor wafer on the chuck, embodied to detect whether or not the wafer is centered on the chuck, may be embodied to detect the strength of chucking of the wafer to the chuck, and may be embodied to provide any combination of the foregoing semiconductor wafer detections .
- FIGS. 4 and 5 another alternate embodiment of the semiconductor wafer detection apparatus of the present invention is shown and indicated by general numerical designation 10A.
- the electrostatic chuck 12 described above and shown in FIGS . 1 and 2 is also shown in FIGS. 4 and 5.
- the support surface 14 of the chuck 12 is provided with a wafer spacing mask of the type described generally hereinabove and as disclosed in U.S. Patent No. 5,656,093 incorporated hereinabove by reference.
- the wafer support mask is indicated by general numerical designation 100 and includes a plurality of upwardly extending pads or support members 112 for engaging and maintaining a semiconductor wafer spaced apart from the support surface 14 of the electrostatic chuck 12 during chucking and subsequent semiconductor wafer processing.
- the support members 112 are usually composed of a non-compressible material such as titanium.
- the sensors should be thicker than the support members to provide a compressive distance (d) by which a piezoelectric signal can be generated. Preferably, this distance is approximately 2-5 ⁇ m (inventor confirm) . In circumstances where the support member material is a compressible material, the thicknesses of the support members and sensors can be approximately equal.
- FIG. 6 depicts yet another embodiment wherein the sensors may be disposed over one or more of the support members (only representative sensor 18A disposed over representative support member 112A for clarity) .
- the sensors are identical to those described above, specifically having lower 24A and upper 25A layers of titanium disposed between an intermediate layer 26A of zinc dioxide.
- the layers comprising the piezoelectric sensor 18A may be deposited over the pads or support elements 112A, 112B and 112C by physical vapor deposition.
- Each of the upper and lower layers 24A and 25A respectively may have a thickness of about 1-9 ⁇ m and the intermediate layer 26A may have a thickness of about 11-50 ⁇ m such that the cumulative thickness of the sensor is about 13-70 ⁇ m. It will be noted from FIG.
- the semiconductor wafer detection apparatus 10A operates in the same manner as semiconductor wafer detection apparatus 10 described above. Specifically, the apparatus operates to detect the presence of a semiconductor wafer on the chuck 12, to detect whether a semiconductor wafer is centered on the . chuck 12 and to detect the strength of chucking of a semiconductor wafer to the chuck and any combination of such wafer detection. Such detections by semiconductor wafer detection apparatus 10A may be provided in the same combination of detections as described above with regard to semiconductor wafer detection apparatus 10.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000572929A JP2002526925A (en) | 1998-09-29 | 1999-09-22 | Chuck with integrated piezoelectric sensor for wafer detection |
KR1020017004027A KR20010088820A (en) | 1998-09-29 | 1999-09-22 | Chuck with integrated piezoelectric sensors for wafer detection |
EP99948405A EP1118114A1 (en) | 1998-09-29 | 1999-09-22 | Chuck with integrated piezoelectric sensors for wafer detection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16323298A | 1998-09-29 | 1998-09-29 | |
US09/163,232 | 1998-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000019521A1 true WO2000019521A1 (en) | 2000-04-06 |
Family
ID=22589056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/022036 WO2000019521A1 (en) | 1998-09-29 | 1999-09-22 | Chuck with integrated piezoelectric sensors for wafer detection |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1118114A1 (en) |
JP (1) | JP2002526925A (en) |
KR (1) | KR20010088820A (en) |
TW (1) | TW432580B (en) |
WO (1) | WO2000019521A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163571A (en) * | 2010-02-04 | 2011-08-24 | 东京毅力科创株式会社 | Substrate carrying device and substrate carrying method |
CN112640081A (en) * | 2018-08-24 | 2021-04-09 | 应用材料公司 | Electrostatic chuck assembly and electrostatic chuck manufacturing method |
US20220108907A1 (en) * | 2020-10-05 | 2022-04-07 | Applied Materials, Inc. | Semiconductor substrate support leveling apparatus |
CN115938997A (en) * | 2023-03-15 | 2023-04-07 | 湖北江城芯片中试服务有限公司 | Wafer chuck and method for monitoring state of clamping piece |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101632605B1 (en) * | 2014-10-08 | 2016-06-24 | 세메스 주식회사 | Method and apparatus for treating substrate |
KR102233467B1 (en) * | 2018-09-12 | 2021-03-31 | 세메스 주식회사 | Substrate treating apparatus and substrate treating method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4506184A (en) * | 1984-01-10 | 1985-03-19 | Varian Associates, Inc. | Deformable chuck driven by piezoelectric means |
JPH05129412A (en) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Equipment operation monitoring method |
EP0607043A1 (en) * | 1993-01-15 | 1994-07-20 | Eaton Corporation | Wafer sensing and clamping monitor |
EP0644578A2 (en) * | 1993-09-16 | 1995-03-22 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
GB2293689A (en) * | 1994-09-30 | 1996-04-03 | Nec Corp | Electrostatic chuck |
US5756964A (en) * | 1997-01-23 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal processing apparatus |
-
1999
- 1999-09-15 TW TW088115932A patent/TW432580B/en not_active IP Right Cessation
- 1999-09-22 EP EP99948405A patent/EP1118114A1/en not_active Withdrawn
- 1999-09-22 KR KR1020017004027A patent/KR20010088820A/en not_active Application Discontinuation
- 1999-09-22 WO PCT/US1999/022036 patent/WO2000019521A1/en not_active Application Discontinuation
- 1999-09-22 JP JP2000572929A patent/JP2002526925A/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4506184A (en) * | 1984-01-10 | 1985-03-19 | Varian Associates, Inc. | Deformable chuck driven by piezoelectric means |
JPH05129412A (en) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Equipment operation monitoring method |
EP0607043A1 (en) * | 1993-01-15 | 1994-07-20 | Eaton Corporation | Wafer sensing and clamping monitor |
EP0644578A2 (en) * | 1993-09-16 | 1995-03-22 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
GB2293689A (en) * | 1994-09-30 | 1996-04-03 | Nec Corp | Electrostatic chuck |
US5756964A (en) * | 1997-01-23 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal processing apparatus |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 017, no. 504 (E - 1430) 10 September 1993 (1993-09-10) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163571A (en) * | 2010-02-04 | 2011-08-24 | 东京毅力科创株式会社 | Substrate carrying device and substrate carrying method |
CN112640081A (en) * | 2018-08-24 | 2021-04-09 | 应用材料公司 | Electrostatic chuck assembly and electrostatic chuck manufacturing method |
US20220108907A1 (en) * | 2020-10-05 | 2022-04-07 | Applied Materials, Inc. | Semiconductor substrate support leveling apparatus |
CN115938997A (en) * | 2023-03-15 | 2023-04-07 | 湖北江城芯片中试服务有限公司 | Wafer chuck and method for monitoring state of clamping piece |
CN115938997B (en) * | 2023-03-15 | 2023-05-26 | 湖北江城芯片中试服务有限公司 | Wafer chuck and method for monitoring state of clamping piece |
Also Published As
Publication number | Publication date |
---|---|
JP2002526925A (en) | 2002-08-20 |
KR20010088820A (en) | 2001-09-28 |
TW432580B (en) | 2001-05-01 |
EP1118114A1 (en) | 2001-07-25 |
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