WO1999059379A2 - Dispositif a diodes electroluminescentes organiques conçu pour etre utilise avec des substrats opaques - Google Patents

Dispositif a diodes electroluminescentes organiques conçu pour etre utilise avec des substrats opaques Download PDF

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Publication number
WO1999059379A2
WO1999059379A2 PCT/US1999/009966 US9909966W WO9959379A2 WO 1999059379 A2 WO1999059379 A2 WO 1999059379A2 US 9909966 W US9909966 W US 9909966W WO 9959379 A2 WO9959379 A2 WO 9959379A2
Authority
WO
WIPO (PCT)
Prior art keywords
display device
opaque
electrode
light emitting
emitting diode
Prior art date
Application number
PCT/US1999/009966
Other languages
English (en)
Other versions
WO1999059379A3 (fr
Inventor
Webster E. Howard
Gary W. Jones
Original Assignee
Fed Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fed Corporation filed Critical Fed Corporation
Publication of WO1999059379A2 publication Critical patent/WO1999059379A2/fr
Publication of WO1999059379A3 publication Critical patent/WO1999059379A3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Definitions

  • the present invention relates to an organic light emitting diode (OLED) device for use with opaque substrates.
  • OLED organic light emitting diode
  • the OLED device is usable with an opaque substrate such as silicon wafers containing active matrix circuitry.
  • Fig. 1 discloses a known organic light emitting diode device 10.
  • the organic light emitting diode device 10 includes a glass substrate 11.
  • a transparent hole-injecting anode or electrode 12 formed of indium-tin oxide (ITO) is located on the glass substrate 11.
  • An organic stack 13 is located on the anode 12.
  • the anode 12 forms the first or bottom layer of the stack 13.
  • a metal cathode 14 is located on top of the organic stack 13.
  • light is emitted in a downward direction through the electrode 12 and the glass substrate 11.
  • Fig.2 discloses a known fully transparent organic light emitting diode device 20.
  • the organic light emitting diode device 20 includes a glass substrate 21.
  • a transparent electrode 12 formed of indium-tin oxide (ITO)
  • the electrode 25 formed of ITO is located on the buffer layer 24.
  • the electrode 25 and buffer layer 24 together function as a cathode.
  • light is emitted in both an upward direction through buffer layer 24 and electrode 25 and a downward direction through the electrode 22 and glass substrate 21.
  • the present invention is directed to a display device comprising an opaque substrate, and an organic light emitting diode device located on the opaque substrate.
  • the opaque substrate may include an integrated circuit chip.
  • the integrated circuit chip may be a Si integrated circuit chip.
  • the organic light emitting diode device may include an opaque bottom electrode, an organic stack, and a transparent top electrode.
  • the opaque bottom electrode may be located on the opaque substrate.
  • the organic stack may include a plurality of layers.
  • the plurality of layers may include at least a hole transport layer and an emitter layer.
  • Fig. 1 is a schematic view of a known organic light emitting diode device
  • Fig. 2 is a schematic view of another known organic light emitting diode device that is capable of emitting light in an upward and downward direction
  • Fig. 1 is a schematic view of a known organic light emitting diode device
  • Fig. 2 is a schematic view of another known organic light emitting diode device that is capable of emitting light in an upward and downward direction
  • Fig. 3 is a schematic view of an organic light emitting diode device in accordance with an embodiment of the present invention. Detailed Description of the Preferred Embodiment
  • Fig.3 discloses an organic light emitting diode device 30 according to an embodiment of the present invention.
  • the organic light emitting diode device 30 includes a substrate 31.
  • a first electrode 32 is located on the substrate 31.
  • An organic stack 33 is located on the first electrode 32.
  • a buffer layer 34 is located on top of the organic stack 33.
  • a second electrode 35 is located on top of the buffer layer 34.
  • the organic light emitting diode device 30 preferably includes active matrix circuitry.
  • the substrate 31 preferably contains the active matrix circuitry, such as, for example, an integrated circuit chip.
  • the substrate 31 comprises a silicon wafer containing the active matrix circuitry. Accordingly, the substrate 31 is opaque. Because the substrate 31 is opaque, light does not pass through the substrate 31. As such, the organic light emitting device 30 is an upwardly or top light emitting device. With this arrangement, the second electrode 35 is a transparent electrode.
  • the reflective electrode 32 under the organic stack 33 will reflect the light generated in the organic stack
  • the first electrode 32 is opaque.
  • the preferred materials having suitable reflective properties for forming the electrode 32 differ depending on whether the first electrode 32 is an anode or a cathode.
  • the metal forming the first electrode 32 has a high work function. This permits the first electrode 32 to be a more efficient hole-injector.
  • Suitable materials forming a first electrode 32 that functions as an anode include platinum, gold, nickel, chromium, tungsten, molybdenum, palladium, copper, as well as, alloys incorporating these materials. It, however, is contemplated that the present invention is not limited to the above-described metals and alloys for forming the anode; rather, other metals and alloys having good reflective properties and a high work function are considered to be within the scope of the present invention.
  • the metal forming the first electrode 32 has a low work function. This improves electrode efficiency.
  • Suitable materials for forming a first electrode 32 that functions as a cathode include magnesium, calcium, lithium, aluminum, scandium, as well as, alloys incorporating the metals. It, however, is contemplated that the present invention is not limited to the above-described metals and alloys for forming the cathode; rather, other metals and alloys having good reflective properties and a low work function are considered to be within the scope of the present invention.
  • a thin layer e.g., less than 10 nm
  • a thin layer of oxide increases the work function of molybdenum.
  • LiF on aluminum causes the aluminum to behave like a material having a lower work function.
  • An ion sputter damaged Alq or CuPc cathode with a transport top conductor such as, for example, ITO or indium zinc oxide (IZO) is also considered to be within the scope of the present invention.
  • the organic stack 33 includes at least a hole transport layer and an emitter layer.
  • the organic stack 33 may further include a hole injection layer containing a layer of CuPc, for example, and an electron transport layer.
  • the second electrode 35 is a transparent electrode to permit light to be emitted from the top of the device 30.
  • the second electrode 35 may be formed from ITO, IZO or a thin layer of metal or organometallic (e.g., CuPc) in conjunction with ITO or IZO.
  • the second electrode is not limited to these materials, other materials having suitable properties for a transparent electrode are considered to be well within the scope of the present invention.

Abstract

L'invention concerne un afficheur destiné à être utilisé sur un substrat opaque. Cet afficheur comprend ledit dispositif placé sur le substrat opaque qui comprend, à son tour, une puce. Le dispositif faisant l'objet de cette invention comprend aussi une électrode inférieure opaque, un empilement organique et une électrode supérieure transparente. L'électrode inférieure opaque est réfléchissante et se trouve sur le substrat opaque.
PCT/US1999/009966 1998-05-14 1999-05-07 Dispositif a diodes electroluminescentes organiques conçu pour etre utilise avec des substrats opaques WO1999059379A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8547598P 1998-05-14 1998-05-14
US60/085,475 1998-05-14

Publications (2)

Publication Number Publication Date
WO1999059379A2 true WO1999059379A2 (fr) 1999-11-18
WO1999059379A3 WO1999059379A3 (fr) 2000-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/009966 WO1999059379A2 (fr) 1998-05-14 1999-05-07 Dispositif a diodes electroluminescentes organiques conçu pour etre utilise avec des substrats opaques

Country Status (1)

Country Link
WO (1) WO1999059379A2 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006576A1 (fr) * 1999-07-19 2001-01-25 Uniax Corporation Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores
EP1104937A1 (fr) * 1999-11-26 2001-06-06 Taiyo Yuden Co., Ltd. Matrice de diodes électroluminescentes organiques sur un substrat semiconducteur
SG111968A1 (en) * 2001-09-28 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
CN100463210C (zh) * 2003-06-03 2009-02-18 三星移动显示器株式会社 采用低电阻阴极的有机电致发光显示装置
EP1978575A3 (fr) * 2007-04-05 2011-08-03 Samsung Mobile Display Co., Ltd. Dispositif luminescent organique incluant une couche d'oxyde conducteur transparent en tant que cathode et son procédé de fabrication
US8021204B2 (en) 2002-04-23 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8044580B2 (en) 2002-04-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US8704243B2 (en) 2002-06-07 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720432A (en) * 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
US4885211A (en) * 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
US4950950A (en) * 1989-05-18 1990-08-21 Eastman Kodak Company Electroluminescent device with silazane-containing luminescent zone
US5739545A (en) * 1997-02-04 1998-04-14 International Business Machines Corporation Organic light emitting diodes having transparent cathode structures
US5986391A (en) * 1998-03-09 1999-11-16 Feldman Technology Corporation Transparent electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720432A (en) * 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
US4885211A (en) * 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
US4950950A (en) * 1989-05-18 1990-08-21 Eastman Kodak Company Electroluminescent device with silazane-containing luminescent zone
US5739545A (en) * 1997-02-04 1998-04-14 International Business Machines Corporation Organic light emitting diodes having transparent cathode structures
US5986391A (en) * 1998-03-09 1999-11-16 Feldman Technology Corporation Transparent electrodes

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006576A1 (fr) * 1999-07-19 2001-01-25 Uniax Corporation Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores
EP1104937A1 (fr) * 1999-11-26 2001-06-06 Taiyo Yuden Co., Ltd. Matrice de diodes électroluminescentes organiques sur un substrat semiconducteur
SG111968A1 (en) * 2001-09-28 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7108574B2 (en) 2001-09-28 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7193359B2 (en) 2001-09-28 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8519619B2 (en) 2002-04-23 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9978811B2 (en) 2002-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9287330B2 (en) 2002-04-23 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8021204B2 (en) 2002-04-23 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8044580B2 (en) 2002-04-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US8497628B2 (en) 2002-04-26 2013-07-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US8803418B2 (en) 2002-04-26 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US9412804B2 (en) 2002-04-26 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US9853098B2 (en) 2002-04-26 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method of the same
US8704243B2 (en) 2002-06-07 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US9166202B2 (en) 2002-06-07 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
CN100463210C (zh) * 2003-06-03 2009-02-18 三星移动显示器株式会社 采用低电阻阴极的有机电致发光显示装置
EP1978575A3 (fr) * 2007-04-05 2011-08-03 Samsung Mobile Display Co., Ltd. Dispositif luminescent organique incluant une couche d'oxyde conducteur transparent en tant que cathode et son procédé de fabrication

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