WO1999013696A1 - Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats - Google Patents
Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats Download PDFInfo
- Publication number
- WO1999013696A1 WO1999013696A1 PCT/DE1998/002694 DE9802694W WO9913696A1 WO 1999013696 A1 WO1999013696 A1 WO 1999013696A1 DE 9802694 W DE9802694 W DE 9802694W WO 9913696 A1 WO9913696 A1 WO 9913696A1
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- WO
- WIPO (PCT)
- Prior art keywords
- solution
- layer
- metal
- colloid
- weight
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
Definitions
- the invention relates to a method for metallizing a substrate having electrical nonconductive surface areas, in particular for metallizing borehole walls in printed circuit boards provided with copper surfaces.
- Non-metallic surfaces in particular walls of holes in printed circuit boards, are metallized according to known methods by electroless metallization processes or with processes in which only electrolytic metallization processes and no electroless metallization processes are used.
- a copper layer is usually applied as the first conductive layer to the non-conductive plastic surfaces and copper surfaces.
- the surfaces are first of all usually activated with a solution containing palladium compounds, for example with a palladium koiloid solution.
- the surfaces are then treated with an electroless copper plating bath.
- the metal layer is usually deposited to a thickness of at least 0.1 ⁇ m (Günther Herrmann, Handbuch der Porterplattenentechnik, Volume 3, Eugen G. Leuze-Verlag, Saulgau, 1993, page 72)
- EP 0 298 298 B1 describes a method in which a catalytic noble metal layer is formed and this is converted into an electrically conductive noble metal chalcogenide layer by means of a chalcogenide compound.
- Another direct metallization method is specified in EP 0 200 398 B1, in which a base layer made of soot particles, which is sufficiently electrically conductive for the subsequent electrolytic metallization, is applied to the substrate surfaces for production.
- DE 39 39 676 C2 proposes a method in which an intrinsically conductive polymer layer, preferably a polypyrrole layer, is formed as the electrically conductive base layer.
- US Pat. No. 4,683,036 describes a direct metallization method in which metal nuclei are first formed on the non-conductive surfaces, preferably palladium nuclei, in particular by using a Palladium koiloid solution, and in which a copper layer is then electrolytically deposited using a copper plating bath with special additive compounds.
- WO 93/17153 A1 and DE-P 44 12 463 A1 disclose methods in which layers of noble metal nuclei are first formed from a noble metal colioid solution which is stabilized by means of an organic protective colloid on the non-conductive surfaces. The germinated surfaces are then treated with a night dipping solution which contains compounds from the group of sulfinic acid, sulfites, bisulfites, thiosulfates, dithionites, dithionates and tetrathionates. A copper layer is then formed using an electrolytic deposition process.
- the methods mentioned have various disadvantages: together with the non-conductive surfaces, the metallic surfaces of a printed circuit board are also coated with the electrically conductive base layer.
- the end faces of the copper inner layers in the holes in the printed circuit boards, which are sometimes difficult to access, must be completely free of any contaminants before subsequent coppering in order to ensure sufficient adhesive strength between the inner layers and the copper layer. This is particularly a problem when processing circuit boards with very narrow bores. Therefore, the base layers must be removed from the copper surfaces of the circuit board before electrolytic copper plating.
- a sufficiently intensive treatment process for the selective removal of these base layers from the inner layers will damage the base layer also in neighboring areas of the inner layers, so that a continuous, area-wide metallization is no longer possible.
- circuit board base materials are often used. As a result, some adjustments to the treatment sequences and thus a corresponding change in the methods are required for some procedures. If there are several types of material in a printed circuit board, for example with FR4 laminates, which in addition to bromine-containing epoxy resin Containing glass fiber fabric, under certain circumstances not all areas in the plated-through holes of the printed circuit boards can be pretreated equally well and metallized in the further process, so that even non-metallized areas may remain in the metal layer.
- the present invention is therefore based on the problem of avoiding the disadvantages of the known methods and, in particular, of finding a method which enables reliable metallization, in particular of the boreholes of printed circuit boards, with very different base materials in particular being metallized without any major changes to the method can, and in which the disadvantages of the known electroless metallization processes, namely the use of bathroom components that are difficult to treat in terms of wastewater technology and toxic bath components, are eliminated.
- the process according to the invention comprises the following essential process steps:
- the etching solution contains a to adjust the hydrogen ion concentration Acid with a pK a value in water of preferably at least 0.3, in particular at least 2.
- the pK a value is defined as a negative decimal logarithm of the acid dissociation constant K a .
- Particularly suitable acids in the etching solution are phosphoric acid, methanesulfonic acid or acetic acid. Other suitable acids are listed, for example, in "Handbook of Chemistry and Physics", CRC Press, 55th edition (1974/1975), pages D129-D130.
- An essential feature of the invention is the combination of a noble metal colloid for seeding the surfaces with catalytically active nuclei and the use of the etching solution with the specified concentration of hydrogen ions and with hydrogen peroxide.
- This combination makes it possible to completely remove the noble metal nuclei formed on the copper surfaces of printed circuit boards without any problems.
- the noble metal nuclei formed on the non-conductive areas of the substrate remain unaffected. This in particular completely prevents nickel or palladium from being deposited on the copper surfaces, so that during the subsequent electrolytic metallization, a metal layer, for example a copper layer, can be deposited directly onto the copper surfaces, that is to say without interfering intermediate layers. Only the etching solution according to the invention is suitable for this.
- etching solutions which contain an alkali peroxodisulfate, alkali caroate or hydrogen peroxide in a sulfuric acid solution instead of the claimed components, lead to excessive attack of the noble metal nuclei formed and therefore damage the germination on the non-conductive surfaces in an undesirable manner.
- any surfaces electrolytically with metal without any problems.
- the walls in holes in printed circuit boards can even be coated without gaps and without holes in printed circuit boards made of polytetrafluoroethylene and fiber reinforcement materials and with high adhesive strength.
- any other base materials for example FR4 resin reinforced with glass fibers, polyimide laminates, polyamide, composite laminates, such as CEM-1 (material combination of epoxy resin, hard paper and epoxy resin / glass fiber laminate). or CEM-3 (special combination of polymer resins and reinforcing materials), cyanate esters, polyetherimide, polyether sulfone and other special materials.
- the metallization of inorganic substrate materials for example ceramics and glasses, is also possible.
- the method is also suitable for coating plastic bodies, for example sanitary objects made from plastics, parts for the automotive industry or furniture fittings with metal.
- Plastic bodies of this type have no metal surfaces and generally consist entirely of plastic.
- the method is suitable for coating the perforated walls in printed circuit boards with a very dense, non-porous and thermally resilient metal layer if the holes are made with poor drilling quality and therefore have very rough perforated walls.
- a secure, adhesive copper / copper connection can be produced at the contact points between the inner circuit board layers and a deposited copper layer, since there are no interfering intermediate layers between the copper layers.
- a base layer with a significantly higher electrical conductivity is formed than in the known direct metallization processes.
- the subsequent copper layer with higher quality and better surface coverage can be deposited electrolytically without pore formation.
- Hydrogen peroxide is in the etching solution in a concentration of 0.5 g / 1 to 100 g / 1 solution, preferably 3 g / 1 to 30 g / 1 solution and, for example, phosphoric acid in a concentration of 5 g / 1 to 200 g / 1 Solution, preferably from 30 g / 1 to 90 g / 1 solution.
- concentration of the two main components damage to the seed metal nucleation on the areas adjacent to the copper surfaces must be expected.
- With a lower concentration of the two main components no satisfactory of the etching result can be achieved, so that in this case a metal film is also partially formed on the copper surfaces.
- the decisive factor is the combination of the hydrogen ion concentration and the hydrogen peroxide concentration in the solution.
- the etching solution may also contain other chemical compounds, for example to prevent the self-decomposition of hydrogen peroxide.
- Such compounds include p-phenolsulfonic acid and propan-2-ol, among others.
- a palladium colloid is preferably used as the noble metal colloid.
- the precious metal colloid should in particular be present as an aqueous, acidic colloid solution in which the palladium colloid is stabilized by an organic protective colloid.
- a protective colloid compound that can be used advantageously is poly-4-vinylpyrrolidone.
- Polyvinyl alcohol, polyvinyl pyridine, polyvinyl methyl ketone, polyvinyl acetate, polyacrylic acid and its derivatives, polyethylene and polypropylene glycol, polyimines, and alkyl and hydroxyalkyl cellulose and their copolymers are also suitable for use.
- natural polymers such as proteins, peptides, polysaccharides, gelatin, agar-agar can also be used.
- Palladium is preferably contained in this solution in a concentration of 20 to 1000 mg / 1 solution, in particular 100 to 500 mg / 1 solution and preferably in a concentration of 250 mg / 1 solution. By using the lowest possible palladium concentration, the carry-over of the expensive palladium is minimized.
- the weight ratio of the protective colloid compound to palladium is preferably 1: 1 to 100: 1.
- the colloid solution can contain a further noble metal, for example rhodium, iridium or platinum.
- the weight ratio of the additional noble metals to palladium is preferably 0.01: 10 to 1.0: 10.
- a reducing agent in particular a metal hypophosphite salt or metal phosphite salt or their acid, is used to form the colloid solution.
- borohydrides such as mono-, di- or trialkylboranes or an alkali metal borohydride, or other reducing agents, for example ascorbic acid, iso-ascorbic acid, hydrazine, hydroxylamine or their derivatives and formaldehyde, can be used.
- the reducing agents must preferably be present in the solution in an amount such that a negative electrochemical potential of -170 mV to -300 mV, measured against a silver / silver chloride standard electrode, is obtained.
- the palladium-koiloid solution is prepared by known processes using a palladium compound which can be easily reduced to metallic palladium by the reducing agent, for example palladium chloride, palladium sulfate or palladium nitrate, by heating the mixture.
- the colloid solution is formed by adding the reducing agent to the solution. Palladium is reduced to palladium metal nuclei and the coagulation of the nuclei is prevented by the presence of the protective colloid compounds.
- the solution should be acidic to avoid the precipitation of hydroxides. A range from pH 1 to 3 and in particular from pH 1.2 to 2.0 is preferred. As a result, good adsorption of the palladium nuclei on the substrate surfaces is achieved, while at the same time the colloid solution is sufficiently stable against palladium flocculation.
- the colloid solution is heated to a temperature above room temperature, for example to 40 ° C.
- a first base metal layer is formed exclusively on the non-conductive areas of the substrate.
- This metal layer is deposited in a small thickness. This avoids the main disadvantages of known methods.
- the thickness of the first metal layer must be sufficient to produce such a high electrical conductivity that the subsequent electrolytic metallization can be carried out without problems.
- This electrically conductive base layer is achieved by depositing a very thin layer of nickel, cobalt, copper or palladium or a layer made of an alloy of these metals.
- the one for the subsequent electrolytic The electrical conductivity required for metallization is not already achieved by germination with the precious metal colloid. Rather, the germination only serves to form a catalytically effective basis for the subsequent metallization.
- a nickel layer is preferably deposited as the first metal layer. Pure nickel layers can be deposited with hydrazine as a reducing agent. Cobalt layers and their alloys are deposited under conditions similar to nickel layers or their alloys. Copper layers can with hypophosphite or with the commonly used
- Formaldehyde can be formed as a reducing agent.
- Various reducing agents can be used to deposit palladium, for example the compounds which can also be used to deposit the other metals.
- formic acid and its derivatives are particularly suitable for palladium deposition.
- nickel or nickel alloy layers or the corresponding cobalt layers eliminates the disadvantages of the difficult monitoring and maintenance of the deposition solutions.
- problems arising when using electroless copper baths do not arise because of the copper solutions which are difficult to dispose of and which also contain toxic bath components, for example formaldehyde.
- the complexing agents used in electroless nickel baths for example hydroxycarboxylic acids, preferably malic acid, lactic acid, citric acid, succinic acid and itaconic acid, are relatively easily biodegradable, so that they do not have to be removed or not completely removed from the used baths in the treatment of waste water.
- the reducing agent hypophosphite used at least for the formation of a nickel / phosphorus alloy layer is not volatile and only slightly toxic, so that there are only minimal requirements for occupational safety.
- the same also applies to a palladination bath with hydroxycarboxylic acids as complexing agents and formic acid or its derivatives as reducing agents.
- a further advantage of the circuit board metallized, in particular with a nickel, nickel alloy, cobalt or cobalt alloy layer, with a layer of their alloys or with a palladium layer, is that these metals cannot be deposited at all on the copper surfaces of the circuit board which have been freed from noble metal germs.
- the first layer of these metals is therefore only deposited in the areas in which it is absolutely necessary for the reliable formation of an electrically conductive base layer.
- the electrolytically deposited copper layer is formed directly on the copper surfaces, so that there is an intimate connection of the metals. This connection is also very insensitive to strong thermal loads.
- selective metallization is made possible only in the electrically non-conductive areas, without metal areas being covered with metal.
- selective coating can also be achieved by first coating with other metals, for example copper; however, the selective coating is easier to deposit by depositing the aforementioned preferred metals.
- the holes in the substrate are optionally pretreated with a cleaning solution.
- An alkaline permanganate solution is preferred, with which resin smears formed during drilling are removed from the copper surfaces in the holes.
- the hole walls are first swollen in a conventional organic swelling agent and then etched.
- the resulting manganese dioxide is removed using a reducing agent.
- other conventional etching solutions can of course also be used, for example solutions containing concentrated sulfuric acid or chromic acid.
- the resin smear can also be removed using a plasma etching process.
- the substrate surfaces can also first be treated with a solution containing wetting agent.
- conditioning solutions preferably contain at least one polyelectrolyte compound or quaternary, preferably polyquaternary compounds. Quaternized polyvinylimidazoles are particularly suitable as polyelectrolyte compounds.
- the solution can also contain wetting agents and, where appropriate, a complexing agent, for example triethanolamine, in order to clean the perforated walls.
- a temperature of 35 to 60 ° C. is preferably set in the conditioning solution.
- the substrate Before the treatment with the earth metal colloid solution, the substrate is preferably brought into contact with a solution which is intended to protect the colloid solution (pre-immersion solution).
- This solution can contain, for example, the reducing agent contained in the colloid solution, in order to compensate for the loss due to carryover from the colloid solution by carrying solution components out of this solution into the colloid solution.
- acids can also be present, for example phosphoric acid.
- a commercially available sulfuric acid copper plating bath is used in particular for the electrolytic metallization.
- another bath for copper deposition or a bath for electrolytic deposition of another metal for example nickel, a noble metal or tin or a tin / lead alloy, can also be used.
- the substrates are usually rinsed in order to remove the treatment solution from the surfaces and the carryover of the solutions into the subsequent ones
- the circuit boards can be treated in conventional systems, with the circuit boards usually being immersed in the treatment baths in a vertical orientation.
- the printed circuit boards are held in a vertical or horizontal position and are transported in a horizontal direction through a treatment system using a transport system provided specifically for this purpose.
- the circuit boards are brought into contact with different treatment solutions in different treatment positions.
- the solutions are swelled, sprayed or sprayed onto the printed circuit boards from below or from above or from both sides, or the printed circuit boards are immersed in a bath which is essentially at rest and are passed through this.
- suction nozzles can also be provided, the surge nozzles being arranged on the other side of the printed circuit boards.
- a drilled circuit board material with two copper inner layers made of an epoxy resin / glass fiber laminate (FR4 laminate) is first treated with a conventional permanganate process for removing resin smear on the walls of the holes.
- the material according to the invention is then plated through in a horizontal system through which the printed circuit boards are transported in a horizontal position and in a horizontal direction and thereby brought into contact with the treatment solutions (aqueous solutions of the specified substances are used in each case):
- Neopact UX is a product of Atotech Deutschland GmbH, DE An etching solution with the following composition was used:
- Phosphoric acid 85% by weight 7 parts by weight hydrogen peroxide, 35% by weight 3 parts by weight 2-propanol 5 parts by weight water, fully desalinated 85 parts by weight
- Glacial acetic acid 5 parts by weight
- Methanesulfonic acid 5 parts by weight
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000511345A JP2001516961A (ja) | 1997-09-11 | 1998-09-04 | 電気的に不導体な表面領域を有するサブストレートを金属化するための方法 |
EP98952563A EP0997061B1 (de) | 1997-09-11 | 1998-09-04 | Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats |
DE59805020T DE59805020D1 (de) | 1997-09-11 | 1998-09-04 | Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats |
KR1020007002606A KR20010023915A (ko) | 1997-09-11 | 1998-09-04 | 전기적으로 비전도성 표면 구역을 갖는 기판의 금속화 방법 |
AT98952563T ATE221716T1 (de) | 1997-09-11 | 1998-09-04 | Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19740431A DE19740431C1 (de) | 1997-09-11 | 1997-09-11 | Verfahren zum Metallisieren eines elektrisch nichtleitende Oberflächenbereiche aufweisenden Substrats |
DE19740431.6 | 1997-09-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999013696A1 true WO1999013696A1 (de) | 1999-03-18 |
Family
ID=7842335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1998/002694 WO1999013696A1 (de) | 1997-09-11 | 1998-09-04 | Verfahren zum metallisieren eines elektrisch nichtleitende oberflächenbereiche aufweisenden substrats |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0997061B1 (de) |
JP (1) | JP2001516961A (de) |
KR (1) | KR20010023915A (de) |
AT (1) | ATE221716T1 (de) |
DE (2) | DE19740431C1 (de) |
TW (1) | TW460614B (de) |
WO (1) | WO1999013696A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1441045A3 (de) * | 2002-12-18 | 2006-01-04 | Enthone Inc. | Verfahren zur Aktivierung von Substraten für die Kunststoffgalvanisierung |
EP1630252A1 (de) * | 2004-08-27 | 2006-03-01 | ATOTECH Deutschland GmbH | Verfahren zur beschichtung von Substraten enthaltend Antimonverbindungen mit Zinn und Zinnlegierungen |
DE102005051632A1 (de) * | 2005-10-28 | 2007-05-10 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen |
JP2013047386A (ja) * | 2011-08-17 | 2013-03-07 | Rohm & Haas Electronic Materials Llc | 無電解金属化のための安定なスズを含まない触媒 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19908755A1 (de) * | 1999-02-19 | 2000-08-24 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Abscheiden einer Metallschicht auf elektrisch nichtleitenden Oberflächen |
DE19918833C2 (de) * | 1999-04-22 | 2002-10-31 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Abscheiden einer Metallschicht auf Oberflächen eines elektrisch nichtleitenden Substrats und Anwendung des Verfahrens |
DE10017887C1 (de) * | 2000-04-11 | 2002-03-21 | Fraunhofer Ges Forschung | Verfahren zur selektiven metallbasierten Aktivierung von Substratoberflächen für die nasschemische, aussenstromlose Metallabscheidung und Mittel hierfür |
EP1274880A2 (de) * | 2000-04-11 | 2003-01-15 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Verfahren zur selektiven, metallbasierten aktivierung von substratoberflächen für die nasschemische, aussenstromlose metallabscheidung und mittel hierfür |
JP3444276B2 (ja) * | 2000-06-19 | 2003-09-08 | 株式会社村田製作所 | 無電解銅めっき浴、無電解銅めっき方法および電子部品 |
DE102004005300A1 (de) * | 2004-01-29 | 2005-09-08 | Atotech Deutschland Gmbh | Verfahren zum Behandeln von Trägermaterial zur Herstellung von Schltungsträgern und Anwendung des Verfahrens |
WO2008056403A1 (en) | 2006-11-06 | 2008-05-15 | C. Uyemura & Co., Ltd. | Direct plating method and solution for palladium conductor layer formation |
CN101195911B (zh) * | 2006-12-08 | 2011-06-22 | 埃托特克德国有限公司 | 在具有塑料表面的基底上形成涂布金属层的预处理溶液和方法 |
WO2009066079A2 (en) * | 2007-11-23 | 2009-05-28 | The University Court Of The University Of Dundee | Nano-particle dispersions |
EP2657367B1 (de) | 2012-04-24 | 2015-11-25 | Enthone Inc. | Vorätzzusammensetzung und Ätzverfahren für Kunststoffsubstrate |
TWI573687B (zh) * | 2013-12-31 | 2017-03-11 | 財團法人工業技術研究院 | 積層板及其製作方法 |
ES2708341T3 (es) | 2016-11-22 | 2019-04-09 | Macdermid Enthone Gmbh | Grabado exento de cromo para un galvanizado sobre plástico |
ES2646237B2 (es) | 2017-09-28 | 2018-07-27 | Avanzare Innovacion Tecnologica S.L. | Formulación para el mordentado de materiales poliméricos previo al recubrimiento de los mismos |
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GB2013722A (en) * | 1978-01-19 | 1979-08-15 | Canning W Materials Ltd | Plating process |
US4448811A (en) * | 1981-12-30 | 1984-05-15 | Omi International Corporation | Oxidizing agent for acidic accelerator in electroless metal plating process |
EP0467199A2 (de) * | 1990-07-19 | 1992-01-22 | LeaRonal, Inc. | Herstellung von gedruckten Leiterplatten durch Metallisierung |
US5104687A (en) * | 1989-06-27 | 1992-04-14 | Alfachimici S.P.A. | Reduced cycle process for the manufacture of printed circuits, and a composition for carrying out said process |
JPH04124281A (ja) * | 1990-09-13 | 1992-04-24 | Hitachi Chem Co Ltd | 無電解銅めっき方法 |
DE4412463A1 (de) * | 1994-04-08 | 1995-10-12 | Atotech Deutschland Gmbh | Palladiumkolloid-Lösung und deren Verwendung |
US5550006A (en) * | 1993-01-11 | 1996-08-27 | Macdermid, Incorporated | Phosphating compositions and processes, particularly for use in fabrication of printed circuits utilizing organic resists |
EP0759482A1 (de) * | 1995-08-23 | 1997-02-26 | MEC CO., Ltd. | Elektroplattierungsverfahren |
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US4683036A (en) * | 1983-06-10 | 1987-07-28 | Kollmorgen Technologies Corporation | Method for electroplating non-metallic surfaces |
US4619741A (en) * | 1985-04-11 | 1986-10-28 | Olin Hunt Specialty Products Inc. | Process for preparing a non-conductive substrate for electroplating |
US5007990A (en) * | 1987-07-10 | 1991-04-16 | Shipley Company Inc. | Electroplating process |
DE3939676C2 (de) * | 1989-11-28 | 1994-01-27 | Schering Ag | Metallisierung von Nichtleitern |
DE4206680C1 (de) * | 1992-02-28 | 1994-01-27 | Schering Ag | Verfahren zur Metallisierung von Nichtleiteroberflächen und die Verwendung von Hydroxymethansulfinsäure im Verfahren |
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1997
- 1997-09-11 DE DE19740431A patent/DE19740431C1/de not_active Expired - Fee Related
-
1998
- 1998-09-03 TW TW087114610A patent/TW460614B/zh not_active IP Right Cessation
- 1998-09-04 AT AT98952563T patent/ATE221716T1/de not_active IP Right Cessation
- 1998-09-04 EP EP98952563A patent/EP0997061B1/de not_active Expired - Lifetime
- 1998-09-04 JP JP2000511345A patent/JP2001516961A/ja active Pending
- 1998-09-04 KR KR1020007002606A patent/KR20010023915A/ko not_active Application Discontinuation
- 1998-09-04 DE DE59805020T patent/DE59805020D1/de not_active Expired - Fee Related
- 1998-09-04 WO PCT/DE1998/002694 patent/WO1999013696A1/de not_active Application Discontinuation
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US5104687A (en) * | 1989-06-27 | 1992-04-14 | Alfachimici S.P.A. | Reduced cycle process for the manufacture of printed circuits, and a composition for carrying out said process |
EP0467199A2 (de) * | 1990-07-19 | 1992-01-22 | LeaRonal, Inc. | Herstellung von gedruckten Leiterplatten durch Metallisierung |
JPH04124281A (ja) * | 1990-09-13 | 1992-04-24 | Hitachi Chem Co Ltd | 無電解銅めっき方法 |
US5550006A (en) * | 1993-01-11 | 1996-08-27 | Macdermid, Incorporated | Phosphating compositions and processes, particularly for use in fabrication of printed circuits utilizing organic resists |
DE4412463A1 (de) * | 1994-04-08 | 1995-10-12 | Atotech Deutschland Gmbh | Palladiumkolloid-Lösung und deren Verwendung |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1441045A3 (de) * | 2002-12-18 | 2006-01-04 | Enthone Inc. | Verfahren zur Aktivierung von Substraten für die Kunststoffgalvanisierung |
EP1630252A1 (de) * | 2004-08-27 | 2006-03-01 | ATOTECH Deutschland GmbH | Verfahren zur beschichtung von Substraten enthaltend Antimonverbindungen mit Zinn und Zinnlegierungen |
WO2006021445A1 (en) * | 2004-08-27 | 2006-03-02 | Atotech Deutschland Gmbh | Method for coating substrates containing antimony compounds with tin and tin alloys |
DE102005051632A1 (de) * | 2005-10-28 | 2007-05-10 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen |
DE102005051632B4 (de) * | 2005-10-28 | 2009-02-19 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen und zur Metallisierung von Kunststoffoberflächen |
US7578947B2 (en) | 2005-10-28 | 2009-08-25 | Enthone Inc. | Method for etching non-conductive substrate surfaces |
JP2013047386A (ja) * | 2011-08-17 | 2013-03-07 | Rohm & Haas Electronic Materials Llc | 無電解金属化のための安定なスズを含まない触媒 |
Also Published As
Publication number | Publication date |
---|---|
KR20010023915A (ko) | 2001-03-26 |
JP2001516961A (ja) | 2001-10-02 |
ATE221716T1 (de) | 2002-08-15 |
DE59805020D1 (de) | 2002-09-05 |
EP0997061B1 (de) | 2002-07-31 |
DE19740431C1 (de) | 1998-11-12 |
EP0997061A1 (de) | 2000-05-03 |
TW460614B (en) | 2001-10-21 |
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