WO1999012195A1 - Dry etching method - Google Patents

Dry etching method Download PDF

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Publication number
WO1999012195A1
WO1999012195A1 PCT/JP1997/003006 JP9703006W WO9912195A1 WO 1999012195 A1 WO1999012195 A1 WO 1999012195A1 JP 9703006 W JP9703006 W JP 9703006W WO 9912195 A1 WO9912195 A1 WO 9912195A1
Authority
WO
WIPO (PCT)
Prior art keywords
dry etching
etching method
gas
apredetermined
denseness
Prior art date
Application number
PCT/JP1997/003006
Other languages
French (fr)
Japanese (ja)
Inventor
Yutaka Omoto
Tatsumi Mitzutani
Ryoji Hamasaki
Tsuyoshi Yoshida
Masayuki Kojima
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/003006 priority Critical patent/WO1999012195A1/en
Publication of WO1999012195A1 publication Critical patent/WO1999012195A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

In order to reduce a difference in denseness between the patterns in the etching of an aluminum-base wiring layer, a gas capable of generating a hydrogen atom upon plasma discharge is mixed in apredetermined proportion into chlorine gas and boron trichloride gas.
PCT/JP1997/003006 1997-08-28 1997-08-28 Dry etching method WO1999012195A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003006 WO1999012195A1 (en) 1997-08-28 1997-08-28 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003006 WO1999012195A1 (en) 1997-08-28 1997-08-28 Dry etching method

Publications (1)

Publication Number Publication Date
WO1999012195A1 true WO1999012195A1 (en) 1999-03-11

Family

ID=14181043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/003006 WO1999012195A1 (en) 1997-08-28 1997-08-28 Dry etching method

Country Status (1)

Country Link
WO (1) WO1999012195A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343771A (en) * 2001-05-17 2002-11-29 Tokyo Electron Ltd Dry etching method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04120282A (en) * 1990-09-11 1992-04-21 Sony Corp Method for etching film of al-based material
JPH06104222A (en) * 1992-09-18 1994-04-15 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04120282A (en) * 1990-09-11 1992-04-21 Sony Corp Method for etching film of al-based material
JPH06104222A (en) * 1992-09-18 1994-04-15 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343771A (en) * 2001-05-17 2002-11-29 Tokyo Electron Ltd Dry etching method
JP4546667B2 (en) * 2001-05-17 2010-09-15 東京エレクトロン株式会社 Dry etching method

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