WO1999012184A2

WO1999012184A2 - Microwave power applicator for generating reactive chemical species from gaseous reagent species

Info

Publication number: WO1999012184A2
Application number: PCT/US1998/018474
Authority: WO
Inventors: Jeff Albom
Original assignee: Alcad Pro, Inc.
Priority date: 1997-09-05
Filing date: 1998-09-05
Publication date: 1999-03-11
Also published as: WO1999012184A3

Abstract

A plasma generating device including a microwave applicator for generating a microwave electric field in the plasma chamber, a plasma chamber for generation of plasma, gas sources for supplying a variety of gases to the plasma generating and reaction chambers, a reaction chamber having a support structure for supporting a substrate. The microwave applicator contains one or more individual microwave generating sources that provide microwave energy into the plasma chamber through a dielectric vacuum window via an array of radiating antenna structures. The use of an array of antennae creates a more uniform field over the substrate to be treated, thereby increasing the consistency of the coating on the substrate. An optional substrate heating system consisting of either an infrared illuminating system for radiating the substrate with thermal energy or a heated platen in contact with the substrate, and a metal grid disposed between the plasma and reaction chambers may also be used.

Description

MICROWAVE POWER APPLICATOR FOR GENERATING REACTIVE CHEMICAL SPECIES FROM GASEOUS REAGENT SPECIES

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to the production of a broad beam of reactive chemical species and, more particularly, in the use of one or more microwave power generators to feed a plurality of microwave antennae to create a high power density applicator for generating the reactive chemical species from gaseous reagent species such that the broad beam of reactive chemical species is suitable for in-situ use in vacuum process vessels for semiconductor manufacture.

2. Description of Related Art

In semiconductor and flat panel display processing, it is desirable to eliminate certain wet chemical processes in order to prevent the hazard and cost associated with such processes. These issues include the danger to human process operators from possible contact with caustic and mutagenic chemicals. Also involved are the handling, disposal, and process consistency difficulties associated with the wet chemicals and their use in a process. Vacuum plasma processes have achieved significant attention for use in the area of semiconductor materials processing. Such processes allow elimination of certain wet chemical process requirements currently popular in semiconductor manufacturing. Areas of use include materials etching, deposition, and ion implantation. A variety of different techniques have been employed to generate the desired plasmas and resultant reactive chemical species used in such processes. As the size of semiconductor and other types of substrates increases, it becomes more difficult to produce a uniform stream of reactive chemical species that will etch, deposit, or implant materials from or to the surface of the substrates while not adversely affecting the underlying substrate and previous processing thereof.

Numerous techniques have been developed for high vacuum substrate etching, deposition, and combined etching and deposition. Processes and equipment employing electron cyclotron resonance techniques at low vacuum levels have been proposed for uniform high density ion etching of substrates, as described in U.S. Patent Numbers 4,401,054; 4543465; 4778561; 4876983; 4,911,814; 5,173,640; 5,198,725; 5,505,780; 5,429,070; 5,279,669; 5,468,955; and 5,399,830. These inventions typically use shaped static magnetic fields in conjunction with RF or microwave electric fields to produce an electron cyclotron resonance region that amplifies the creation of reactive ion species by efficiently using electron collisions with the source chemical species. A variety of techniques have been incorporated into the etch process to improve uniformity over the surface of a substrate. Processes and equipment modulating the electron cyclotron resonance conditions by varying the magnetic fields over time to sweep the resonance region have been described in U.S. Patent Numbers 4,947,085; 5,208,512; and 5,440,206. The sweeping action of the magnetic fields helps insure that the time averaged ion flux produced over any particular area is similar to that in other areas.

Additionally, ultraviolet irradiation of the substrate, described in U.S. Patent Numbers

4,689,112 and 5,308,791, has been used to enhance the ion etch process initiated by the electron cyclotron resonance while ultraviolet illumination of the substrate is avoided to prevent damage to the substrate, disclosed in U.S. Patent Number 5,061,838.

All of these etching processes have the adverse affect of modifying the masking photoresists such that they are more fully polymerized and crossed link. Halogen species are incorporated into the photoresist polymer chains as the photoresist is exposed to these reactive agents in ion and neutral forms. Photoresists may also include contaminants such as heavy metals, alkali metals, and other chemical elements that can be detrimental to continued semiconductor substrate processing if they are not first removed.

Early photoresist dry removal processes, as described in U.S. Patent Numbers 3,705,055;

3,837,856; 3,867,216; 3,951,843; and 4,201,579, involved batch processing of a large number of semiconductor wafers in an RF induced plasma chamber under vacuum. The vacuum level for operating these type of processes is typically greater than 1 Torr. At these vacuum levels, the ability to advantageously use electron cyclotron resonance for enhancement of reactive chemical species creation is reduced 1 ' 2 and typically was not used. A variety of chemical reagents were added to the chamber for creation of the reactive chemical species that would etch and remove the organic photoresists. These chemical reagents include oxygen, nitrogen, and halo-carbon species such as carbon tetrafluoride. Due to the batch oriented nature of these processes and the arrangement of the substrates within the batch chamber, it is difficult to achieve uniform photoresist removal rates.

Batch photoresist dry removal processes have been supplanted by single substrate processes wherein the environment of the process chamber containing the single substrate is more easily controlled for uniformity and electromagnetic energy introduction. A variety of different processes including RF plasma excitation, UV plasma excitation, microwave plasma excitation, thermal heating of the substrate through thermal conduction or infrared irradiation, and introduction of various chemical reagents at different times and cycles within the process have been described in U.S. Patent Numbers 5,174,856; 5,198,634; 5,221,424; 5,382,316; and 5,545,289. Some systems for single substrate photoresist removal have been incorporated into reactive ion etch equipment as disclosed in U.S. Patent Numbers 4,689,112 and 5,164,034.

The uniformity of single substrate dry photoresist removal processes has not been very successful as the literature notes and as is evidenced by the need to overetch the substrate to insure that all photoresist has been removed. Overetch is the amount of additional photoresist dry removal processing required once the photoresist is cleared from any particular area of the substrate in order to insure that all organic photoresist material has been removed from all areas

¹ Asmussen, J., /. Vac. Sci. Technology., A7: 883, (1989)

² Grill, A., "Cold Plasma in Materials Fabrication From Fundamentals to Applications", pp. 40-43, IEEE Press, (1994) of the substrate. Overetch requirements of 50% or more are typical in manufacturing processes. It is desirable to uniformly remove photoresist from a substrate so that the uncoated substrate is not subjected to any more processing time or steps than is necessary. The need for uniformity in the various plasma processing steps is increased as the size of the substrate increases. Increased substrate size is desirable in order to allow the manufacture of more quantity and larger devices per substrate. New technologies such as flat panel display devices have evolved where the entire substrate is used as a device and the processing over the entire substrate must be consistent in order to achieve acceptable manufacturing yields.

Current plasma generating apparatus typically create reactive chemical species for organic photoresist removal in a relatively small cross sectional effusing area when compared to the size of the substrate being processed. A variety of techniques are used to spread the reactive chemical species over the larger area of the substrate. These techniques do not necessarily compensate for the difference in shape between the substrate and the reactive chemical species source.

Additionally, the reactive chemical species spreading results in variations in transit time from the point where the reactive chemical species is created to the point where it is incident on the wafer and available to react. The vacuum levels used in these apparatus are larger than 1 Torr and recombination or de-activation of the reactive chemical species can become significant at these vacuum levels. Structures are available to create large effusive area plasmas at lower pressure levels, as disclosed in U.S. Patent Numbers 5,133,826; 5,173,640; 5,468,955; and 5,565,738 but these techniques are oriented toward high vacuum ion etching and deposition and are not applicable to photoresist removal due to the reactive chemical species being used and the high energy levels of the ions in use which are intended to etch the substrate itself.

In order to distribute microwave power over a large cross sectional area, power forming networks are necessary to guide power from a single concentrated source to a larger aperture or area. Typical plasma generating systems that utilize microwave power to activate the plasma and its reactive species use a single high power microwave source generator attached to a microwave applicator which is then attached to a generating chamber. The generating chamber may be in direct contact with the reaction chamber where a specimen or substrate is located or the generating chamber may be spaced apart from the reaction chamber and the plasma. If spaced apart, the reactive species is ducted to the reaction chamber.

FIG. la shows a typical microwave generator source tube 1, such as a magnetron, attached to a waveguide launching mechanism 2, such that microwave power propagates in a preferred forward direction 3 and may be reflected back to the tube in a reverse direction 7. Connection is made to this combined mechanism at microwave flange 13 for the routing of microwave power to other devices. DC power supply connections are not shown.

FIG. lb shows a typical interconnection of the mechanism in FIG. la to a bi-directional coupler 4 through the attachment of waveguide flanges 13 and 17. Microwave power propagating in the preferred forward direction 3 is sampled through connection port 5 and microwave power propagating in the reverse reflected direction 7 is sampled through connection port 6. The sampled forward and reverse microwave powers may be used to monitor the actual power delivered and dissipated downstream of the bi-directional coupler. These sampled powers may also be used to actuate a tuning mechanism that will cause a reduction in the reflected power. Connection is made to this combined mechanism at microwave flange 14 for the routing of microwave power to other devices. DC power supply connections are not shown.

FIG. lc shows another typical attachment of the mechanism in FIG. la to a microwave isolator device 8 through the attachment of waveguide flanges 13 and 15. Reverse direction reflected power propagating in direction 7 is guided away from contact with the microwave source generator tube 1 through the use of a magnet 9 in communication with a ferrite structure 10. Reverse direction reflected power is directed toward a dissipation device or load 11 so as not to damage the microwave source generator tube 1. Connection is made to this combined mechanism at microwave flange 16 for the routing of microwave power to other devices. DC power supply connections are not shown.

FIG. Id shows a further configuration of the interconnection of the mechanism in FIG. la with both a microwave isolator device 8 and a bi-directional coupler 4 through attachment of waveguide flange 13 to waveguide flange 15 and attachment of waveguide flange 16 to waveguide flange 17. The advantage of this combined mechanism is to allow protection of the microwave source generator tube from overloads and damage caused by reflected power and simultaneously monitor power delivered downstream of the mechanism. Connection is made to this combined mechanism at microwave flange 14 for the routing of microwave power to other devices. DC power supply connections are not shown.

FIG. 2a shows a typical microwave horn antenna where microwave waveguide flange 18 may be connected to any of the flanges 13, 14, 16 denoted in previous figures such that microwave power may be radiated or applied in direction 3a. FIG. 2b is a typical microwave slotted aperture antenna with input connection waveguide flange 19, and broad wall slots 21 that communicate with the inside of the rectangular waveguide tube. Dimensions 25, 22, and 23 are determined by design requirements of frequency, radiated energy requirement per length in direction 20, and propagating beam width in direction 24. This antenna may be connected to any of the flanges 13, 14, 16 denoted in previous figures such that microwave power may be radiated or applied in direction 20. The slots 21 may be on the narrow wall side 33 of the waveguide.

FIG. 2c shows a less common prior art microwave leaky waveguide mode antenna with input connection flange 26, termination load 29, and tapered slot 31. The tapered slot 31 is in communication with the inside of the waveguide rectangular tube and is designed to provide power radiation in direction 30 along its length 32. The tapered slot 31 may be of various forms including but not limited to exponential taper and sinuous design. The slot 31 may also be on the narrow wall side 33 of the waveguide.

FIG. 2d shows another prior art microwave leaky waveguide mode antenna with input connection flange 26, termination load 29, and width tapered apertures 53. The tapered apertures 53 are in communication with the inside of the waveguide rectangular tube and are designed to provide power radiation in direction 30 along its length 32. The tapered apertures 53 may be of various forms including but not limited to rectangular slots, circular holes, and crossed irises. The apertures 53 may also be on the narrow wall side 33 of the waveguide and inclined at an angle with respect to the broad wall side 52 of the waveguide.

These figures display common methods used for generating and radiating microwave power in free space, communication, and microwave heating applications.

SUMMARY OF THE INVENTION

The invention addresses the problem of creating an apparatus for photoresist removal from, material etching of, or material deposition onto the surface of a substrate in a dry plasma. The first object of the invention is to provide an array of microwave emitting antenna extending over an area that includes the entire projected cross section of the process chamber that will provide a uniform microwave power flux density for creation of plasma reactive chemical species. The array of emitting antenna consists of one or more separate microwave structures.

Another object of the invention is to produce a plasma discharge over a large area by providing high power microwave propagating waves emitted from an antenna array formed from a plurality of separate antennae and microwave source generators. A metal grid is in proximity of the plasma generation chamber and in communication with the plasma. The grid is grounded so as to attract free electrons and impede them from effusing into the reaction chamber. The momentum of neutral radicals and ions will carry them past the grid with minimal electrostatic interaction except for those reactive chemical species that collide with the metal grid itself. The radicals and ions will effuse into the reaction chamber in which the substrate is disposed perpendicular to the effused radical and ion flow. The metal grid also prevents the propagation of high power microwave energy from reaching the reaction chamber and altering or damaging the substrate through impressed voltages, voltage standing waves, and resultant electrical current flows through the substrate and its surface.

An object of an alternate embodiment of the invention is removal of photoresist and ashing from the surface of the substrate with minimal damage or upset to the substrate and its surfaces by placing a positive voltage on the substrate to impede the high energy impact of positive ions effusing from the plasma generating chamber through the metal grid and toward the substrate. The positive voltage on the substrate creates a charged sheath that is of dimensions dependent on the applied voltage and vacuum within the proximity of the substrate. A positive voltage will help repel positive alkali ions contained in the photoresist away from the surface of the substrate so they can be reacted on and entrained in the remaining ash or in the reactive chemical species that is carried away in the effluent stream by the vacuum pump system.

An object of another embodiment of the invention is to allow for chemical vapor deposition onto or etching of the surface of the substrate by placing a voltage on the substrate and by introduction of appropriate chemical species into the chamber so as to be activated by the microwave energy. The substrate will be heated to sufficient temperature to allow proper reaction of the introduced chemical species at the surface of the wafer for chemical vapor deposition.

An object of another embodiment of the invention is that the side of the substrate opposite the front side which is in communication with the reactive chemical species stream will be heated in order to increase the reaction rate of the reactive chemical species with the photoresist on the front side of the substrate. The heating may occur by irradiation from an infrared emitting source external to the reaction chamber and vacuum thereof and directed toward the back side of the substrate with an infrared transparent window disposed between the source and substrate. The infrared transparent window acts as a vacuum window between the infrared emitting source and the reaction chamber. The heating may also occur through thermal conduction from a heating platen in communication with the back side of the substrate and internal to the reaction chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. la shows a conventional microwave tube generator source and waveguide launcher,

FIG. lb shows a conventional microwave tube generator source, waveguide launcher, and bi-directional coupler device;

FIG. lc shows a conventional microwave tube generator source, waveguide launcher, and isolator device;

FIG. Id shows a conventional microwave tube generator source, waveguide launcher, isolator device, and bi-directional coupler device;

FIG. 2a shows a microwave waveguide horn antenna;

FIG. 2b shows a microwave waveguide aperture antenna; FIG. 2c shows a microwave tapered slot leaky waveguide mode antenna;

FIG. 2c shows a microwave width tapered aperture leaky waveguide mode antenna;

FIG. 3 shows an embodiment of a microwave generating and antennae feed structure using horn antennae that supports a large cross sectional area in accordance with the invention;

FIG. 4 shows another embodiment of a microwave generating and antennae feed structure using aperture antennae that supports a large cross sectional area in accordance with the invention;

FIG. 5a shows another embodiment of a microwave generating and antennae feed structure using tapered slot leaky waveguide mode antennae that supports a large cross sectional area in accordance with the invention;

FIG. 5b shows another embodiment of a microwave generating and antennae feed structure using width tapered aperture leaky waveguide mode antennae that supports a large cross sectional area in accordance with the invention;

FIG. 6a shows a preferred form of the invention of a microwave generating and antennae feed structure using leaky mode antennae in communication with plasma generation and reaction chambers where dielectric windows are disposed to seal the vacuum within the chambers from the external ambient atmosphere of the microwave generating and antennae feed structure;

FIG. 6b shows a cross section view of the preferred embodiment of the invention shown in FIG. 6a; FIG. 7a shows a preferred form of the invention of a microwave generating and antennae feed structure using leaky mode antennae without elongated horn envelopes in communication with plasma generation and reaction chambers where dielectric windows are disposed to seal the vacuum within the chambers from the external ambient atmosphere of the microwave generating and antennae waveguide feed structure; FIG. 7b shows the cross section view of the preferred embodiment of the invention shown in FIG. 7a;

FIG. 8a shows another preferred form of the invention using the embodiment shown in FIG. 6b where an infrared illumination mechanism is incorporated to heat the substrate from the back side of the substrate and a substrate biasing grid is added allow positive, negative, or neutral voltage bias of the substrate;

FIG. 8b shows another preferred form of the invention using the embodiment shown in FIG. 7b where an infrared illumination mechanism is incorporated to heat the substrate from the back side of the substrate and a substrate biasing grid is added to allow positive, negative, or neutral voltage bias of the substrate; FIG. 9a shows another preferred form of the invention using the embodiment shown in FIG.

6b where a heated platen mechanism is incorporated in the plasma reaction chamber to heat the substrate from the back side of the substrate and an electrical biasing feature is attached to the platen to allow positive, negative, or neutral voltage bias of the substrate;

FIG. 9b shows another preferred form of the invention using the embodiment shown in FIG. 7b where a heated platen mechanism is incorporated to heat the substrate from the back side of the substrate and an electrical biasing feature is attached to the platen to allow positive, negative, or neutral voltage bias of the substrate;

FIG. 10a shows another preferred form of the invention using the embodiment shown in FIG. 9a where reactive gases are introduced into the plasma generation and reaction chambers for chemical vapor deposition process on the substrate; and

FIG. 10b shows another preferred form of the invention using the embodiment shown in FIG. 9b where reactive gases are introduced into the plasma generation and reaction chambers for chemical vapor deposition process on the substrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The applicant has discovered several ways to generate high microwave power density levels over large cross sectional areas for use in plasma generating devices such that the microwave power density is substantially uniform over any sub-area. In addition, the type of apparatus used to generate the large cross sectional microwave power wave can be placed sufficiently close to the generation and reaction chambers of the process equipment such that reactive species generated by the microwave power have short transit times to the substrate being processed.

In accordance with the invention, FIG. 3 shows a two dimensional array of microwave horn applicators as shown in FIG. 2a where each applicator is connected to an independent microwave source mechanism as shown in FIG. Id. The microwave source mechanism may be similar to any of those shown in FIG. la, FIG. lb, or FIG. lc. The array of applicator mechanisms may extend independently in either or both of the two dimensions so as to cover the entire area of the plasma generating chamber. The number of independent applicator mechanisms required to cover the area is given by the form m * n where m is the number of applicator mechanisms required in the first dimension and n is the number of applicator mechanisms required in the second dimension. A space may be present between each applicator and its neighboring applicators to allow a supporting structure in the plasma generating chamber for the glass or ceramic material used to enclose the vacuum in the plasma generating chamber.

FIG. 4 shows the concept of a one dimensional array of microwave aperture applicators in accordance with the invention. This embodiment makes use of slotted aperture antennae shown in

FIG. 2b where each antenna is connected to an independent microwave source mechanism as shown in FIG. Id. The microwave source mechanism may be similar to any of those shown in

FIG. la, FIG. lb, or FIG. lc. Each slotted aperture antenna is enclosed in an elongated horn envelope 35 to guide the power from individual aperture antenna toward the plasma generation chamber and to prevent crosstalk interaction between adjacent antennae. A space may be present between each applicator and its neighboring applicator to allow a supporting structure in the plasma generating chamber for the glass or ceramic material used to enclose the vacuum in the plasma generating chamber. The number of antennae and the length of the aperture area of each antenna is determined by the area of the plasma generating chamber. The width and length of the elongated horn envelope 35, the individual aperture dimensions, and the power delivered by the microwave source mechanisms are designed for uniform power delivery to the area of the plasma generating chamber.

FIG. 5a shows the concept of a one dimensional array of microwave tapered slot leaky waveguide mode applicators in accordance with the invention. This embodiment makes use of leaky waveguide mode antennae shown in FIG. 2c where each tapered slot leaky waveguide mode antenna is connected to an independent microwave source mechanism as shown in FIG. Id. The microwave source mechanism may be similar to any of those shown in FIG. la, FIG. lb, or FIG. lc. Each tapered slot leaky waveguide mode antenna is enclosed in an elongated horn envelope 35 to guide the power from individual aperture antenna toward the plasma generation chamber and to prevent crosstalk interaction between adjacent antennae. A space may be present between each applicator and its neighboring applicator to allow a supporting structure in the plasma generating chamber for the glass or ceramic material used to enclose the vacuum in the plasma generating chamber. The number of antennae and the length of the leaky mode area of each antenna are determined by the area of the plasma generating chamber. The width and length of the elongated horn envelope 35, the individual leaky mode slot dimensions, and the power delivered by the microwave source mechanisms are designed for uniform power delivery to the area of the plasma generating chamber.

FIG. 5b shows the concept of a one dimensional array of width tapered aperture leaky waveguide mode applicators in accordance with the invention. This embodiment makes use of leaky waveguide mode antennae shown in FIG. 2d where each width tapered aperture leaky waveguide mode antenna is connected to an independent microwave source mechanism as shown in FIG. Id. The microwave source mechanism may be similar to any of those shown in

FIG. la, FIG. lb, or FIG. lc. Each width tapered aperture leaky waveguide mode antenna is enclosed in an elongated hom envelope 35 to guide the power from individual antenna toward the plasma generation chamber and to prevent crosstalk interaction between adjacent antennae. A space may be present between each applicator and its neighboring applicator to allow a supporting structure in the plasma generating chamber for the glass or ceramic material used to enclose the vacuum in the plasma generating chamber. The number of antennae and the length of the leaky mode area of each antenna is determined by the area of the plasma generating chamber. The width and length of the elongated horn envelope 35, the individual leaky mode aperture dimensions, and the power delivered by the microwave source mechanisms are designed for uniform power delivery to the area of the plasma generating chamber.

FIG. 6a and FIG. 6b show a typical connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in FIG. 5a or FIG. 5b without the microwave isolator device 8 is placed on the plasma generating vessel in communication with glass or ceramic seal plate(s) which form dielectric windows 37 covering the aperture of the antennae and in physical contact with the metal periphery of the plasma chamber. The plasma generating chamber 38 is in communication with a reaction chamber 40. A substrate 41 may be placed in the reaction chamber 40. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. This metal plate or mesh 39 is connected to electrical ground in order to prevent microwave energy from entering the reaction chamber 40 and damaging the substrate 41. The metal plate or mesh 39 is also used to impede high energy electrons generated in the plasma from impacting and damaging the substrate 41. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity.

FIG. 7a and FIG. 7b show a typical connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in either FIG. 5a or FIG. 5b without the microwave isolator device 8 and without the elongated horn envelope 35 is placed on the plasma generating vessel in communication with dielectric windows 37 and in physical contact with the metal periphery and supporting structure of the plasma chamber . The plasma generating chamber 38 is in communication with a reaction chamber 40. A substrate 41 may be placed in the reaction chamber 40. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. This metal plate or mesh 39 is connected to electrical ground in order to prevent microwave energy from entering the reaction chamber 40 and damaging the substrate 41. The metal plate or mesh 39 is also used to impede high energy electrons generated in the plasma from impacting and damaging the substrate 41. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity.

FIG. 8a shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in FIG. 5a or FIG. 5b without the microwave isolator device 8 is placed on the plasma generating vessel in communication with dielectric windows 37 and in physical contact with the metal periphery and support rods 42 of the plasma chamber. Support rods 42 are placed in the generating chamber 38 in contact with the dielectric windows 37 and are attached to the outside walls of the chamber in order to provide structural support for the dielectric windows 37. Elastomeric ring seal(s) 54 are used between the dielectric windows 37 and the periphery 38a of the plasma generating chamber 38. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. An electrically conductive screen or metal grid 59 may be placed in the reaction chamber 40 in such a fashion as to physically support any substrate 41 also placed in the reaction chamber 40. An electrical connection 60 external to the reaction chamber 40 and attached to the electrically conductive screen or metal grid 59 may be made so as to allow a positive, negative, or neutral voltage to be impressed on the substrate 41 for the purpose of attracting or repelling charged particles. An infrared illuminator assembly consisting of an array of elongated reflective shaped mirrors 46 and infrared light sources 47 is placed below the reaction chamber 40 and in contact with the infrared transparent glass or material seal plate(s) 45. Support rods 44 are placed in the reaction chamber 40 in contact with the infrared transparent glass or ceramic seal plate(s) 45 and are attached to the outside walls of the chamber in order to provide structural support for the infrared transparent glass or ceramic seal plate(s) 45. Elastomeric ring seal(s) 55 are used between the infrared transparent glass or ceramic seal plate(s) 45 and the periphery 40a and support rods 44 of the plasma reaction chamber 40. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity. FIG. 8b shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in either FIG. 5a or FIG. 5b without the microwave isolator device 8 and without the elongated horn envelope 35 is placed on the plasma generating in communication with dielectric windows 37 and in physical contact with the metal periphery and support rods 42 of the plasma chamber. Support rods 42 are placed in the generating chamber 38 in contact with the dielectric windows 37 and are attached to the outside walls of the chamber in order to provide structural support for the dielectric windows 37. Elastomeric ring seal(s) 54 are used between the dielectric windows 37 and the periphery 38a of the plasma generating chamber 38. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. An electrically conductive screen or metal grid 59 may be placed in the reaction chamber 40 in such a fashion as to physically support any substrate 41 also placed in the reaction chamber 40. An electrical connection 60 external to the reaction chamber 40 and attached to the electrically conductive screen or metal grid 59 may be made so as to allow a positive, negative, or neutral voltage to be impressed on the substrate for the purpose of attracting or repelling charged particles. An infrared illuminator assembly consisting of an array of elongated reflective shaped mirrors 46 and infrared light sources 47 is placed below the reaction chamber 40 and in contact with the infrared transparent glass or material seal plate(s) 45. Support rods 44 are placed in the reaction chamber 40 in contact with the infrared transparent glass or ceramic seal plate(s) 45 and are attached to the outside walls of the chamber in order to provide structural support for the infrared transparent glass or ceramic seal plate(s) 45. Elastomeric ring seal(s) 55 are used between the infrared transparent glass or ceramic seal plate(s) 45 and the periphery 40a and support rods 44 of the plasma reaction chamber 40. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity.

FIG. 9a shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in FIG. 5a or FIG. 5b without the microwave isolator device 8 is placed on the plasma generating vessel 40 in contact with dielectric windows 37. Support rods 42 are placed in the generating chamber 38 in contact with the dielectric windows 37 and are attached to the outside walls of the chamber in order to provide structural support for the glass or ceramic seal plate(s) 37. Elastomeric ring seal(s) 54 are used between the dielectric windows 37 and the periphery 38a of the plasma generating chamber 38. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. A heated platen 56 is placed in the plasma reaction chamber 40 and insulated from the walls of the chamber using non- electrically conductive and low thermally conductive material 57. Electrical connections 58 are made to the platen to supply electrical energy for heating and electrical connections for temperature monitoring. A substrate 41 may be placed in the reaction chamber 40 so that it is in contact with the heated platen 56. An electrical connection 60 external to the reaction chamber 40 and attached to the outside of the heated platen 56 may be made to allow a positive, negative, or neutral voltage to be impressed on the substrate 41 for the purpose of attracting or repelling charged particles. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity. FIG. 9b shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. The leaky waveguide mode applicator structure shown in FIG. 5a or FIG. 5b without the microwave isolator device 8 and without the elongated horn envelope 35 is placed on the plasma generating vessel 38 in contact with dielectric windows 37. Support rods 42 are placed in the generating chamber 38 in contact with the dielectric windows 37 and are attached to the outside walls of the chamber in order to provide structural support for the dielectric windows 37. Elastomeric ring seal(s) 54 are used between the dielectric windows 37 and the periphery 38a of the plasma generating chamber 38. A perforated metal plate or mesh 39 may be placed between the plasma generating chamber 38 and reaction chamber 40. A heated platen 56 is placed in the plasma reaction chamber 40 and insulated from the walls of the chamber using non-electrically conductive and low thermally conductive material 57. Electrical connections 58 are made to the platen 56 to supply electrical energy for heating and electrical connections for temperature monitoring. A substrate 41 may be placed in the reaction chamber 40 so that it is in contact with the heated platen 56. An electrical connection 60 external to the reaction chamber 40 and attached to the outside of the heated platen 56 may be made to allow a positive, negative, or neutral voltage to be impressed on the substrate 41 for the purpose of attracting or repelling charged particles. Electrical connections, thermal cooling mechanisms, vacuum system, and reactive chemical containers, distribution, control, and injection systems are not shown to preserve figure clarity. FIG. 10a shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. FIG. 10a is similar to FIG. 9a with the addition of the capability to introduce reagent species contained in containers 48 through valves 49, and distribution of the reagent species inside the plasma generating chamber 38 and reaction chamber 40 to allow for chemical vapor deposition. The distribution of the reagents to the inside of the plasma generating chamber 38 is done through a series of distribution tubes 50 and nozzles 51 that run within or near the support rods 42.

FIG. 10b shows another connection of an embodiment of the invention to a plasma generating chamber 38 and reaction chamber 40 device. FIG. 10b is similar to FIG. 9b with the addition of the capability to introduce reagent species contained in containers 48 through valves 49, and distribution of the reagent species inside the plasma generating chamber 38 and reaction chamber 40 to allow for chemical vapor deposition. The distribution of the reagents to the inside of the plasma generating chamber 38 is done through a series of distribution tubes 50 and nozzles 51 that run within or near the support rods 42.

The dielectric windows 37 for the above embodiments may be formed of a single sheet of material or may be in the form of individual pieces each covering single or multiple apertures of the antennae. Although other materials may be used and/or developed, currently preferred materials for the dielectric windows 37 are quartz, alumina, sapphire, or a multi-layered window using one or more of these material. Although the examples given include many specificities, they are intended as illustrative of only one possible embodiment of the invention. Other embodiments and modifications will, no doubt, occur to those skilled in the art. For example, the system may also be designed for etching or other similar technologies. Thus, the examples given should only be interpreted as illustrations of some of the preferred embodiments of the invention, and the full scope of the invention should be determined by the appended claims and their legal equivalents.

Claims

What is claimed is:

1. A device for generating and radiating microwave power into a plasma generating device for acting on a substrate, said device comprising: at least one microwave power generator, an array of microwave antennae attached to said at least one microwave power generator, a plasma chamber for generating plasma, at least one dielectric window for separating the microwave antennae, power generators, and ambient atmosphere from said plasma chamber, means for guiding microwave power from said at least one microwave power generator to said array of microwave antennae whereby radiation occurs, means for guiding microwave radiation from said array of microwave antennae through said at least one dielectric window and into said plasma chamber such that plasma is generated, means for introducing gaseous chemicals into said plasma chamber, means for attaching a vacuum pumping system to said plasma chamber, and a support structure for holding the substrate in said plasma chamber whereby the generated plasma may come in contact with the substrate.

2. The device of claim 1 wherein said array of microwave antennae is configured in a one dimensional lineal array.

3. The device of claim 1 wherein said array of microwave antennae is configured in a two dimensional surface array.

4. The device of claim 1 wherein said array of microwave antennae are chosen from the group of antennae consisting of individual flared horn antenna, slotted aperture antenna, tapered slot leaky waveguide mode antenna, and width tapered aperture leaky waveguide mode antenna.

5. The device of claim 1 wherein said array of microwave antennae comprises a plurality of slotted aperture antennae and said at least one dielectric window is a plurality of dielectric windows each covering at least one aperture of said plurality of slotted aperture antennae.

6. The device of claim 1 wherein said array of microwave antennae comprises a plurality of tapered slot leaky waveguide mode antennae and said at least one dielectric window is a plurality of dielectric windows each covering at least one aperture of said plurality of tapered slot leaky waveguide mode antennae.

7. The device of claim 1 wherein said array of microwave antennae comprises a plurality of width tapered aperture leaky waveguide mode antenna and said at least one dielectric window is a plurality of dielectric windows each covering at least one aperture of said plurality of width tapered aperture leaky waveguide mode antenna.

8. The device of claim 1 wherein said at least one dielectric window is constructed of a layer of quartz and a layer of sapphire to provide impedance matching to the microwave energy propagating from the antennae into said plasma chamber.

9. The device of claim 1 wherein said at least one microwave generator is an array of microwave generators.

10. The device of claim 1 wherein said at least one dielectric window is constructed of a material chosen from the group of materials consisting of quartz, alumina, and sapphire.

11. The device of claim 1 wherein said at least one dielectric window is a plurality of dielectric windows each covering at least one aperture of said array of microwave antennae.

12. The device of claim 1 wherein said plasma chamber has a plasma generating chamber and a plasma reaction chamber, said device further comprising a perforated metal plate disposed between said plasma generating chamber and said plasma reaction chamber.

13. The device of claim 12 further comprising an infrared irradiating source and collimating mirrors both being located adjacent to said plasma reaction chamber, whereby said infrared irradiating source and said collimating mirrors project infrared radiation toward the back of the substrate placed on said support structure and at least one infrared transparent plate disposed between said plasma reaction chamber and said infrared sources and mirrors.

14. The device of claim 1 wherein said support structure comprises a metal grid, said metal grid forming an electrical connection with the substrate, wherein said electrical connection is routed to a power supply external to said plasma chamber.

15. The device of claim 1 wherein said support structure comprises a heated platen located in said plasma chamber, said heated platen being in thermal communication with the substrate.

16. The device of claim 15 wherein said heated platen is electrically connected to the substrate by direct contact with the substrate located on top of said heated platen and wherein said electrical connection is routed from said heated platen to a power supply external to said plasma chamber.

17. A device for generating and radiating microwave power into a plasma generating device for acting on a substrate, said device comprising: at least one microwave power generator, an array of microwave antennae attached to said at least one microwave power generator, microwave power guide located between said at least one microwave power generator and said array of microwave antennae, a plasma chamber for generating plasma, at least one dielectric window for separating the microwave antennae, power generators, and ambient atmosphere from said plasma chamber, microwave radiation guide located between said array of microwave antennae, said at least one dielectric window, and said plasma chamber, thereby guiding microwave radiation into said plasma chamber such that plasma is generated, a vacuum pump attached to said plasma chamber, an inlet for introduction of gaseous chemicals into said plasma chamber, and a support structure for holding the substrate in said plasma chamber whereby the generated plasma may come in contact with the substrate.

18. A method for generating and radiating microwave power into a plasma generating device for acting on a substrate, said method comprising the steps of: (a) evacuating gases from a plasma chamber; (b) introducing gaseous chemicals into said plasma chamber; (c) holding a substrate within a plasma chamber; (d) creating microwave power; (e) guiding said microwave power to an array of microwave antennae whereby microwave radiation results; (f) and guiding said microwave radiation from said array of microwave antennae through at least one dielectric window and into said plasma chamber, thereby creating plasma.

19. The method of claim 19 further comprising the step of: (g) forming deposition of material on a surface of said substrate.

20. A method of claim 19 wherein step (g) is performed by: (h) storing a reagent species external to said plasma chamber, (i) adding said reagent species to said plasma chamber through control valves and flow restricting devices; (j) and distributing said reagent species into said plasma chamber through pipes and nozzles.