WO1997035231A2 - Thermal treatment process of positive photoresist composition - Google Patents
Thermal treatment process of positive photoresist composition Download PDFInfo
- Publication number
- WO1997035231A2 WO1997035231A2 PCT/US1997/003062 US9703062W WO9735231A2 WO 1997035231 A2 WO1997035231 A2 WO 1997035231A2 US 9703062 W US9703062 W US 9703062W WO 9735231 A2 WO9735231 A2 WO 9735231A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- resist
- substrate
- seconds
- temperature
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Definitions
- the photoresist material is applied to the semiconductor substrate by spin-coating.
- the resist material which still contains a large amount of solvent (up to an estimated 30%), is still very soft and tacky. In this state, it would not offer resistance to the developer even in the unexposed parts. It must, therefore, be dried and densified in a thermal treatment step commonly called a softbake or prebake.
- the softbake can be carried out on a hotplate device or in an air oven.
- the back side of the substrate carrying the resist layer is brought into contact or close proximity to the hot metal surface of the hotplate for a time of 60 to 90 seconds, most typically 60 seconds, a time which has become a kind of standard in the industry.
- oven softbakes use even longer times, e.g., a popular condition is 90°C for 30 min.
- the resist During spin coating, the resist has become highly viscous and has for practical purposes stopped flowing, as evidenced by its failure to planarize topography on substrates which have it.
- the film is still far from thermodynamic equilibrium, containing a large amount of free volume which to a good extent is taken up by solvent.
- the softbake the resist is heated above its initial flow point again; it may become a liquid for a short time until loss of solvent and densification cause it to solidify again. This process is accompanied by a reduction in film thickness.
- the bake temperature can be chosen to be above the glass transition temperature of the polymer.
- the film comes close to thermodynamic equilibrium.
- the maximum bake temperature is limited by the thermal decomposition of the diazonaphthoquinone sensitizer (DNQ).
- DNQ diazonaphthoquinone sensitizer
- the isothermal decomposition temperatures for DNQs typically used in the industry range from 120°C for trihydroxybenzophenone derivatives to about 130°C for non- benzophenone backbones. Usually much lower temperatures are used because with monochromatic radiation such as typically used in g- or i-line wafer steppers, light moving towards the surface and light reflected from the surface interfere to form a standing wave pattern.
- PEB Post-Exposure Bake
- the substrate reflectivity can be reduced to a few percent of the original one.
- the minimum reflectivity is calculated to be around 3-3.5 percent at a thickness of 50 nm (on a silicon substrate); the reflectivity of the organic bottom layers can be reduced to less than one tenth that, which makes the standing wave pattern sufficiently weak that a post exposure bake is no longer required.
- the present invention provides a further improvement in photoresist resolution and performance by using a higher than conventional soft-baking (SB) temperature
- flashbake very short baking time ( ⁇ 30 seconds) ofthe resist.
- This process will in the following be referred to as the "flashbake" process. It should be noted that the benefits of the flashbake are not obtained unless it is carried out over a bottom antireflective coating, such as TiN or AZ* BARLiTM coating.
- the flashbake process significantly improves the photoresist's resolution, process latitude, thermal deformation temperature, resist adhesion and plasma etch resistance.
- the flashbake process enhances resist performance because it allows more effective drying and densification of the photoresist than conventional softbake processes.
- spin coating the photoresist stops thinning and reaches a non-fluid state which still contains large amounts of solvent.
- conventional softbaking the rise in temperature initially brings the resist back into a fluid state in which solvent can efficiently escape from the resist.
- the resist quickly is brought back into a non-fluid, glassy state as the evaporation of solvent hardens the matrix. Solvent cannot escape efficiently once the resist matrix has been thus hardened.
- the resist still contains essentially the same amount of solvent that is found after the much shorter hot plate bakes at the same temperature.
- the resist and wafer do not reach the temperature ofthe hotplate. Measurements of the wafer temperature show that the wafer is still about 5-10°C below a hotplate temperature of 140°C after 20 seconds. Therefore we believe that the resist remains in a fluid state during the entire flashbake process, leading to a more thorough drying of the film which causes the completely unexpected and unforeseen improvement in the thermal stability of the resist.
- the thermal stability obtained with the flashbake process is higher by 20 to 30°C than with a conventional softbake process.
- diazonaphthoquinone novolak resists which make use of fractionated resins, i.e., resins in which part or all of the low-MW components typically present in a novolak synthesis by condensation of phenolic compounds and formaldehyde have been removed.
- fractionated resins i.e., resins in which part or all of the low-MW components typically present in a novolak synthesis by condensation of phenolic compounds and formaldehyde have been removed.
- fractionated resins i.e., resins in which part or all of the low-MW components typically present in a novolak synthesis by condensation of phenolic compounds and formaldehyde have been removed.
- fractionated resins i.e., resins in which part or all of the low-MW components typically present in a novolak synthesis by condensation of phenolic compounds and formaldehyde have been removed.
- There are many ways to achieve a molecular weight dependent fractionation One which shall be discussed here, in order to
- the lower phase contains the high-MW novolak, with the low-MW materials remaining in the (typically larger) upper phase.
- concentrations and ratios of the solvents it is possible to achieve control over the maximum MW removed and the degree of removal of the low MW fractions. Due to the lack of low-MW fractions, resists based on fractionated novolaks will have higher glass transition temperatures, hence they tend to solidify more quickly during spin coating and conventional softbaking.
- DNQ diazonaphthoquinone
- What is claimed is a process for preparing a relief image on a substrate of low reflectivity which comprises coating a photoresist on a substrate, baking the photoresist coating, and exposing the photoresist to actinic light.
- the bake step being carried out by bringing the substrate into contact or close proximity with a heated surface not lower in temperature than 130°C, for a period of no longer than 30 seconds (5-30 seconds).
- the temperature of the heated surface is preferentially between 130 to 160°C, most preferentially between 140 to 150°C.
- the baking time of the resist is preferentially lower than 20 seconds, most preferentially between 10 and 20 seconds.
- the bake process may be carried out on devices such as customarily used in the semiconductor industry, i.e.
- hotplates optionally in the form of a proximity bake in which the distance between substrate and hotplate is regulated buy a distance holder device, e.g., balls inserted into the hotplate surface.
- the baked, exposed photoresist is then treated conventionally to develop the final image on the substrate.
- the process of this invention significantly improves the photoresist's resolution, process latitude, thermal deformation temperature, resist adhesion and plasma etch resistance. It also eliminates the need for a post exposure bake (PEB) step during the photolithographic process, without causing a severe standing wave effect.
- PEB post exposure bake
- the photoresist used in the process of this invention is typically a diazonaphthoquinone/novolak resist, although non-diazonaphthoquinone, non- novolak based resists may also benefit from this process.
- the situation in which the diazonaphthoquinone sensitizer is thermally stable has proven particularly advantageous, since the higher thermal stability further reduces thermal decomposition effects of the sensitzer which otherwise might impair performance.
- Thermal stability of diazonaphthoquinones is highly correlated to the backbone structure.
- backbones which are neither aliphatic compounds nor derivatives of benzophenone often show higher thermal stability, in particular if they are aromatic compounds in which no more than a single hydroxy group is attached to any phenyl ring.
- the process of this invention is also perceived to be particularly advantageous for photoresists containing fractionated novolak resins, i.e., resins which have undergone a process in which the low molecular weight components present after synthesis have been partially or completely removed, since the process of this invention provides for a higher degree of densification and the presence of less free volume than can be accomplished with prior art processes.
- the reduction in free volume may be assisted by a combination of the fractionated resin with monomeric or low-MW speed enhancer compounds. Such compounds are frequently added to such resins in order to enhance the light sensitivity.
- Example 1 The photoresist employed in the following experiment was AZ*7800 positive photoresist (available from AZ Photoresist Products, Hoechst Celanese Co ⁇ oration, Somerville, NJ.), which contains a novolak resin and a 2,1,5 diazonaphthoquinone sulfonate ester photosensitizer in a mixture of Ethyl Lactate/n-Butyl Acetate as the casting solvent.
- the backbone of this photoresist is not a benzophenone derivative, and this PAC was found to be thermally highly stable.
- a series of 4" silicon wafers were coated with 2500 A of AZ* BARLiTM coating on a MTI-Flexifab® coater and baked on a hot plate @ 170°C for 45 seconds. These BARLiTM-coated wafers were further coated with the above photoresist to a thickness of 1.07 ⁇ m (micrometers). For comparison, wafer #1A and #1C listed in Table 1, the photoresist was directly coated on the silicon wafers. The wafers were soft baked (SB) on a hot plate at temperatures ranging from 90°C to 150°C for a period ranging from 10 seconds to 60 seconds.
- SB soft baked
- the baked wafers were then imagewise exposed with a NIKON* 0.54 NA i-line stepper using a reticle containing equal line&space patterns with linewidths from 0.2 ⁇ m (micrometers) to 1.0 ⁇ m (micrometers).
- the exposed wafers were developed with AZ* 300 MTF developer (2.38% tetramethyl ammonium hydroxide solution in water) for a specific time, (60-120 seconds).
- the linewidth of the developed resist lines/spaces pattern were measured by a HITACHi* S-4000 scanning electron microscope. Table 1 summarizes the resist lithographic performance under the various process conditions. Table 1 : Lithographic performance for various process conditions
- Dose-to-Print (DTP, in mJ/cm 2 ) is the exposure dose required to replicate the targeted resist feature sizes to the targeted (mask) dimension. Resolution is defined as the smallest feature resolved which measures within ⁇ 10% of its targeted linewidth at DTP.
- the depth-of-focus (DOF) is defined as the range of the defocus in which a resist is able to replicate a feature with a measured linewidth within ⁇ 10% of the targeted feature, with the additional proviso that the film thickness loss is lower than 10%.
- Wafer #1A in Table 1 represents the resist processed with conventional process conditions, i.e., a lower SB temperature(90 o C/60 seconds) and a higher PEB temperature (110°C/60 seconds) were used to deliver good resist performance and eliminate the detrimental standing wave effect caused by the light reflective from the substrate. As evidenced by wafer #1C, if there is no PEB applied, a severe standing wave effect is observed. Application of a bottom antireflective coating (B.A.R.C.) such as AZ* BARLiTM coating offers improvement in resist resolution, DOF and also eliminates the need for the PEB step as evidenced by wafer #1B.
- a bottom antireflective coating such as AZ* BARLiTM coating
- Example 2 Four 10.16 cm (4") wafers were coated with BARLiTM coating under the same coating condition as used in the Example 1. Photoresist was then spun on, and the coated wafers were soft-baked on a hot plate at temperature of 140°C for 10, 20, 30 and 60 seconds (Wafers A, B, C and D). Each of the wafers was then exposed, developed and measured by the same process as described in Example 1. Table 2 summarizes the effect of the baking time on the resist performance for the flashbake process described in this invention.
- the resist performance is significantly improved by the flash SB process if the soft baking time is less than or equal to 30 seconds.
- Softbakes at temperatures greater than 130°C for longer than 30 seconds (60 seconds) will cause degradation on the resist performance, as evidenced by wafer #2D.
- Table 2 also provides information about the practical usefulness of the flashbake process. As can be seen by a comparison of wafers # 2A-C, the performance change is small in the range of 10-30 seconds, indicating sufficiently large latitude for the bake time. It is estimated from these data that for 140°C bake temperatures, the optimum bake time is approximately 15 seconds.
- Example 3 Four 10.16 cm (4") wafers were coated with BARLiTM coating the same coating condition as used in the Example 1. Photoresist was then spun on, and the coated wafers were soft-baked on a hot plate using temperatures and times as listed in the Table 3. Each ofthe wafers was then imagewise exposed on a i-line stepper at the DTP values given in Table 1 to generate a 3 x 3 array of identical dies.
- the exposed wafers were developed by the same process as described in Example 1, using the developing time listed in Table 3 for each wafer. Each developed wafer was broken into 9 fragments, with each fragment containing a die image from the above 3 x 3 die array pattern. Each fragment was further baked on a hot plate for two minutes at the temperatures given in Table 3.
- the resist thermal flow temperature defined as temperature which the edge of a 500 ⁇ m (micrometers) pad pattern on the die starts to deform, was then measured by SEM inspection.
- wafers processed with the flashbake process described in this invention clearly offer much better resist thermal flow temperatures. The improvement can be as much as 30°C (see wafer #3C) over the resist processed with conventional SB process (see wafer#3 A).
- Example 4 A series of 10.16 cm (4") silicon wafers were coated with 2500 A AZ* BARLiTM coating on a MTI-Flexifab* coater and baked on a hot plate @ 170°C for 45 seconds. These BARLiTM-coated wafers were further spin-coated to a resulting dry film thickness of approximately 1 ⁇ m (micrometers) with AZ*7200 positive tone photoresist, available from AZ* Photoresist Products, Hoechst Celanese Co ⁇ oration, Somerville, NJ.
- This photoresist contains a novolak resin and a mixture of 2,1,5- and 2,1,4-diazonaphthoquinone sulfonate ester photosensitizers, where one of the diazonaphthoquinone sensitizer is based on a trishydroxybenzophenone (TOB) ballast compound; it uses PGMEA as the resist casting solvent.
- the resist was coated to a thickness of 1.07 ⁇ m (micrometers) both on the BARLi-coated wafers and on bare silicon wafers.
- the wafers then were soft baked on a hot plate at a temperature at 110°C for 60 seconds for wafers #4A and #4B, and to 140°C for 10 seconds for wafer #4C, as indicated in Table 4.
- the baked wafers were then imagewise exposed with a NLKON* 0.54 NA i-line stepper using a reticle containing equal line&space patterns with linewidths from 0.2 ⁇ m (micrometers) to 1.0 ⁇ m (micrometers).
- the exposed wafers were developed with AZ* 300MLF developer (a 2.38% tetramethyl ammonium hydroxide solution in water) for a times given in Table 4.
- the linewidths ofthe developed resist line&space patterns were then measured with a HITACHI* S- 4000 scanning electron microscope.
- Table 4 compares the resist performance between the resist processed with and without BARLiTM antireflective coating to that of the resist processed with the flashbake process described in this invention.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97914802A EP0885409A2 (en) | 1996-03-07 | 1997-02-27 | Thermal treatment process of positive photoresist composition |
KR1019980706953A KR20000064553A (en) | 1996-03-07 | 1997-02-27 | Thermal Treatment of Embossed Photoresist Compositions |
JP9533479A JP2000507046A (en) | 1996-03-07 | 1997-02-27 | Heat treatment method for positive photoresist composition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1300896P | 1996-03-07 | 1996-03-07 | |
US60/013,008 | 1996-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997035231A2 true WO1997035231A2 (en) | 1997-09-25 |
WO1997035231A3 WO1997035231A3 (en) | 1997-11-13 |
Family
ID=21757839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/003062 WO1997035231A2 (en) | 1996-03-07 | 1997-02-27 | Thermal treatment process of positive photoresist composition |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0885409A2 (en) |
JP (1) | JP2000507046A (en) |
KR (1) | KR20000064553A (en) |
CN (1) | CN1135437C (en) |
TW (1) | TW328142B (en) |
WO (1) | WO1997035231A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102402137A (en) * | 2010-09-15 | 2012-04-04 | 无锡华润上华半导体有限公司 | Photoetching method of pores |
US9064914B2 (en) | 2010-10-14 | 2015-06-23 | Screen Semiconductor Solutions Co., Ltd. | Method of and apparatus for heat-treating exposed substrate |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030079542A (en) * | 2002-04-04 | 2003-10-10 | 동우 화인켐 주식회사 | Photo-resist composition |
CN108690949B (en) * | 2017-04-06 | 2020-05-22 | 昆山工研院新型平板显示技术中心有限公司 | Mask plate, preparation method thereof and evaporation method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3305923A1 (en) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Process for prebaking substrates coated with positive photoresist based on naphthoquinonediazide and phenolformaldehyde resin |
-
1997
- 1997-02-27 EP EP97914802A patent/EP0885409A2/en not_active Withdrawn
- 1997-02-27 CN CNB971927715A patent/CN1135437C/en not_active Expired - Fee Related
- 1997-02-27 KR KR1019980706953A patent/KR20000064553A/en not_active Application Discontinuation
- 1997-02-27 WO PCT/US1997/003062 patent/WO1997035231A2/en not_active Application Discontinuation
- 1997-02-27 JP JP9533479A patent/JP2000507046A/en not_active Withdrawn
- 1997-02-27 TW TW086102416A patent/TW328142B/en active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3305923A1 (en) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Process for prebaking substrates coated with positive photoresist based on naphthoquinonediazide and phenolformaldehyde resin |
Non-Patent Citations (2)
Title |
---|
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 10, no. 6, 1 November 1992, pages 2536-2541, XP000331709 OMKARAM NALAMASU: "CHARACTERISTICS OF AN IMPROVED CHEMICALLY AMPLIFIED DEEP- ULTRAVIOLET POSITIVE RESIST" * |
SOLID STATE TECHNOLOGY, vol. 32, no. 2, February 1989, pages 89-93, XP000027986 YOON S F ET AL: "THE EFFECT OF ELEVATED SOFTBAKE TEMPERATURE ON HIGH RESOLUTION POSITIVE PHOTORESIST" * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102402137A (en) * | 2010-09-15 | 2012-04-04 | 无锡华润上华半导体有限公司 | Photoetching method of pores |
US9064914B2 (en) | 2010-10-14 | 2015-06-23 | Screen Semiconductor Solutions Co., Ltd. | Method of and apparatus for heat-treating exposed substrate |
Also Published As
Publication number | Publication date |
---|---|
KR20000064553A (en) | 2000-11-06 |
WO1997035231A3 (en) | 1997-11-13 |
TW328142B (en) | 1998-03-11 |
CN1135437C (en) | 2004-01-21 |
JP2000507046A (en) | 2000-06-06 |
CN1218559A (en) | 1999-06-02 |
EP0885409A2 (en) | 1998-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0763781B1 (en) | Antihalation compositions | |
US5635333A (en) | Antireflective coating process | |
TW457402B (en) | Photosensitive resin composition, manufacturing method thereof and a method for forming a pattern by using the composition | |
JP3258014B2 (en) | Positive radiation-sensitive mixture and recording material produced using the same | |
JP3184530B2 (en) | Photoresist with low metal ion level | |
JP2001109165A (en) | Performance forming method | |
JPS63500616A (en) | contrast enhancement layer | |
JPH0342461B2 (en) | ||
US6106995A (en) | Antireflective coating material for photoresists | |
JP2989064B2 (en) | Pattern forming method of metal deposition film | |
JPH0459630B2 (en) | ||
JP3827762B2 (en) | Antireflection composition and resist pattern forming method | |
WO1997035231A2 (en) | Thermal treatment process of positive photoresist composition | |
JPH0148526B2 (en) | ||
EP0885410B1 (en) | Thermal treatment process of positive photoresist composition | |
US5223377A (en) | Interrupted developing process for a photoresist image | |
JP3135585B2 (en) | Positive photoresist composition containing 2,4-dinitro-1-naphthol | |
EP0904568A1 (en) | Metal ion reduction of aminochromatic chromophores and their use in the synthesis of low metal bottom anti-reflective coatings for photoresists | |
JP3765582B2 (en) | Mixed solvent system for positive photoresist | |
JPS62102243A (en) | Making of photoresist | |
JP3781471B2 (en) | Antireflection composition and method for forming photosensitive film using the same | |
JPH04328747A (en) | Photoresist composition coated evenly | |
JP3787188B2 (en) | Antireflection composition and resist pattern forming method | |
JPH10213902A (en) | Negative type photosensitive composition for forming pattern by lift-off method | |
JPH0644149B2 (en) | Photosensitive composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 97192771.5 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1997914802 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019980706953 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1997914802 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1997914802 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1019980706953 Country of ref document: KR |
|
WWR | Wipo information: refused in national office |
Ref document number: 1019980706953 Country of ref document: KR |