WO1997022166A3 - Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern - Google Patents
Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern Download PDFInfo
- Publication number
- WO1997022166A3 WO1997022166A3 PCT/DE1996/002458 DE9602458W WO9722166A3 WO 1997022166 A3 WO1997022166 A3 WO 1997022166A3 DE 9602458 W DE9602458 W DE 9602458W WO 9722166 A3 WO9722166 A3 WO 9722166A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser light
- stable
- freedom
- semiconductor laser
- light source
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000003287 optical effect Effects 0.000 abstract 3
- 241000282326 Felis catus Species 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000004611 spectroscopical analysis Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J3/433—Modulation spectrometry; Derivative spectrometry
- G01J3/4338—Frequency modulated spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/0804—Transverse or lateral modes
- H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
- H01S3/08068—Holes; Stepped surface; Special cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9521621A JP2000501887A (ja) | 1995-12-14 | 1996-12-13 | 同調可能かつ調整が安定な半導体レーザ光源及び半導体レーザの光学的に安定なほぼ連続的な同調のための方法 |
EP96946101A EP0867057A2 (de) | 1995-12-14 | 1996-12-13 | Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern |
US09/077,957 US6785305B1 (en) | 1995-12-14 | 1996-12-13 | Tuneable, adjustment-stable semiconductor laser light source and a method for the optically stable, largely continuous tuning of semiconductor lasers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19548647.1 | 1995-12-14 | ||
DE19548647A DE19548647C2 (de) | 1995-12-14 | 1995-12-14 | Durchstimmbare, justierstabile Halbleiterlaserlichtquelle sowie ein Verfahren zur optisch stabilen, weitgehend kontinuierlichen Durchstimmung von Halbleiterlasern |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997022166A2 WO1997022166A2 (de) | 1997-06-19 |
WO1997022166A3 true WO1997022166A3 (de) | 1997-08-14 |
Family
ID=7781351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1996/002458 WO1997022166A2 (de) | 1995-12-14 | 1996-12-13 | Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern |
Country Status (5)
Country | Link |
---|---|
US (1) | US6785305B1 (de) |
EP (1) | EP0867057A2 (de) |
JP (1) | JP2000501887A (de) |
DE (1) | DE19548647C2 (de) |
WO (1) | WO1997022166A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004050118A1 (de) * | 2004-07-30 | 2006-03-23 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung |
US20070002922A1 (en) * | 2005-06-30 | 2007-01-04 | Intel Corporation | Retro-reflecting lens for external cavity optics |
JP2016134484A (ja) * | 2015-01-19 | 2016-07-25 | 国立大学法人大阪大学 | レーザー共振装置、及びそれを備えたレーザー装置、並びに、可変型バンドパスフィルタ装置 |
DE102018208147A1 (de) * | 2018-05-24 | 2019-11-28 | Carl Zeiss Smt Gmbh | Messanordnung zur frequenszbasierten Positionsbestimmung einer Komponente |
CN112821191A (zh) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | 半导体激光器驱动电路、多线激光器及多线激光雷达 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663897A (en) * | 1969-02-06 | 1972-05-16 | Inst Angewandte Physik | Method of modulating a laser beam and related apparatus |
JPH0294489A (ja) * | 1988-09-29 | 1990-04-05 | Nec Corp | 光機能素子 |
JPH03209638A (ja) * | 1990-01-11 | 1991-09-12 | Fujitsu Ltd | 光学ヘッド |
EP0587154A2 (de) * | 1992-09-10 | 1994-03-16 | Hughes Aircraft Company | Vielfachlasersystem mit schmaler Bandbreite |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2051328B2 (de) | 1970-10-20 | 1973-03-29 | Fa. Carl Zeiss, 7920 Heidenheim | Vorrichtung zur wellenlaengenselektion bei breitbandig emittierenden lasern |
GB8807385D0 (en) | 1988-03-29 | 1988-05-05 | British Telecomm | Semiconductor device assembly |
US4907237A (en) * | 1988-10-18 | 1990-03-06 | The United States Of America As Represented By The Secretary Of Commerce | Optical feedback locking of semiconductor lasers |
US5050179A (en) * | 1989-04-20 | 1991-09-17 | Massachusetts Institute Of Technology | External cavity semiconductor laser |
US5172390A (en) * | 1989-04-20 | 1992-12-15 | Massachusetts Institute Of Technology | Pre-aligned diode laser for external cavity operation |
US5177750A (en) | 1991-07-30 | 1993-01-05 | Hewlett-Packard Company | Misalignment-tolerant, grating-tuned external-cavity laser with enhanced longitudinal mode selectivity |
US5524012A (en) * | 1994-10-27 | 1996-06-04 | New Focus, Inc. | Tunable, multiple frequency laser diode |
-
1995
- 1995-12-14 DE DE19548647A patent/DE19548647C2/de not_active Expired - Fee Related
-
1996
- 1996-12-13 JP JP9521621A patent/JP2000501887A/ja active Pending
- 1996-12-13 US US09/077,957 patent/US6785305B1/en not_active Expired - Fee Related
- 1996-12-13 EP EP96946101A patent/EP0867057A2/de not_active Withdrawn
- 1996-12-13 WO PCT/DE1996/002458 patent/WO1997022166A2/de not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663897A (en) * | 1969-02-06 | 1972-05-16 | Inst Angewandte Physik | Method of modulating a laser beam and related apparatus |
JPH0294489A (ja) * | 1988-09-29 | 1990-04-05 | Nec Corp | 光機能素子 |
JPH03209638A (ja) * | 1990-01-11 | 1991-09-12 | Fujitsu Ltd | 光学ヘッド |
EP0587154A2 (de) * | 1992-09-10 | 1994-03-16 | Hughes Aircraft Company | Vielfachlasersystem mit schmaler Bandbreite |
Non-Patent Citations (5)
Title |
---|
F. FAVRE: "external cavity semiconductor laser with 15 nm continuous tuning range", ELECTRONICS LETTERS, vol. 22, no. 15, 17 July 1986 (1986-07-17), STEVENAGE GB, pages 795 - 796, XP002032605 * |
H. SATO ET AL: "Design of nondispersion optical feedback system using diffraction grating for semiconductor laser multiple longitudinal modes control", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. qe-18, no. 2, February 1982 (1982-02-01), NEW YORK US, pages 155 - 157, XP002032604 * |
PATENT ABSTRACTS OF JAPAN vol. 014, no. 292 (E - 0944) 25 June 1990 (1990-06-25) * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 487 (P - 1286) 10 December 1991 (1991-12-10) * |
ZORABEDIAN P ET AL: "INTERFERENCE-FILTER-TUNED, ALIGNMENT-STABILIZED, SEMICONDUCTOR EXTERNAL-CAVITY LASER", OPTICS LETTERS, vol. 13, no. 10, October 1988 (1988-10-01), pages 826 - 828, XP000050989 * |
Also Published As
Publication number | Publication date |
---|---|
US6785305B1 (en) | 2004-08-31 |
JP2000501887A (ja) | 2000-02-15 |
EP0867057A2 (de) | 1998-09-30 |
WO1997022166A2 (de) | 1997-06-19 |
DE19548647C2 (de) | 2003-01-23 |
DE19548647A1 (de) | 1997-06-26 |
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