WO1997016836A1 - Rf transformer using multilayer metal polymer structures - Google Patents
Rf transformer using multilayer metal polymer structures Download PDFInfo
- Publication number
- WO1997016836A1 WO1997016836A1 PCT/US1996/016876 US9616876W WO9716836A1 WO 1997016836 A1 WO1997016836 A1 WO 1997016836A1 US 9616876 W US9616876 W US 9616876W WO 9716836 A1 WO9716836 A1 WO 9716836A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transformer
- layer
- polymer
- deposited
- metal spiral
- Prior art date
Links
- 239000002184 metal Substances 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 46
- 229920000642 polymer Polymers 0.000 title claims abstract description 27
- 230000008878 coupling Effects 0.000 claims abstract description 27
- 238000010168 coupling process Methods 0.000 claims abstract description 27
- 238000005859 coupling reaction Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 13
- 230000008901 benefit Effects 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 230000001939 inductive effect Effects 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims abstract 2
- 239000002861 polymer material Substances 0.000 claims abstract 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical group C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 19
- 238000004804 winding Methods 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000002044 microwave spectrum Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F19/00—Fixed transformers or mutual inductances of the signal type
- H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
Definitions
- the invention of the present disclosure relates to transformers for high frequency application made by standard etching and deposition techniques.
- the transformers fabricated using thin film technology are known to have primary and secondary coils in a side-by-side arrangement as well as a multi-level arrangement.
- a driving factor in the design of the transformer is the Q factor of the system.
- the Q factor can be increased by increasing L and decreasing R to the greatest extent possible for a given value of ⁇ .
- a time dependent variation in the current in the primary windings or coil results m an induced current in the secondary windings .
- the induced current is proportional to the number of turns m the secondary coil.
- the larger the number of turns in the primary coil the greater is the magnetic field density generated by the primary coil, leading to a greater induced current in the secondary coil.
- a transformer which induces current by means of mutual inductance between the primary and secondary coils the larger the number of turns of the coils, the higher is the magnetic field intensity generated by each of the coils so that the inductance between the coils is increased.
- the coupling between the coils and the corresponding energy conversion is increased.
- L requires among other factors, an increase in the number of turns of the primary and secondary coils, which serves often to increase the area of the transformer itself. Beyond the obvious desire to reduce the required space of the individual elements of a circuit, such an increase in area also increases serves to reduce high speed performance capabilities. Furthermore, increasing the number of windings to increase inductance increases the length of the conductor which increases resistance and lowers Q value. Accordingly, it is desired to have a transformer with an increased inductance and a reduced resistance to optimize the Q factor at higher frequencies.
- Si0 2 can be deposited in layer thicknesses on the order of 2 ⁇ m. Deposition of silicon dioxide in thickness greater than this amount results in excessive mechanical stress in the film that adversely affect structural reliability.
- the disadvantage of using silicon dioxide as the insulator is, among other disadvantages, its relatively high dielectric constant and the inability to provide layers of thicknesses greater than the above mentioned. To this end, the capacitance between the transformer windings at different layers on a vertically stacked transformer is directly proportional to the dielectric constant and inversely proportional to the distance between the windings (hence the thickness of the optimize the magnetic coupling between transformer coils, whereas electric coupling through capacitive coupling is not desirable.
- a transformer that achieves the desired small size, and yet achieves the desired inductive coupling between coils while not being susceptible to capacitive coupling between the coils.
- a transformer is described in the instant disclosure having a multi-layer thin film structure having a low dielectric constant material disposed between the coils that minimizes capacitive coupling between the coils of the transformer.
- a glass substrate has a first metal spiral deposited thereon.
- a layer of polymer insulator preferably benzocyclobutene (BCB) is deposited, encapsulating the first metal spiral.
- a second metal spiral is deposited on the BCB layer, and any required interconnection is effected by the use of vias which are selectively opened in the BCB. This process of metal spirals separated by BCB and interconnected as necessary by vias is continued until the desired number of turns in the primary and secondary coils is achieved.
- the transformer described will have three layers of metal windings with: a substrate, a first metal coil winding, a first layer of polymer, a second layer of coil windings, a second layer of polymer, a third layer of coil windings and a third layer of polymer. It is clearly within the purview to have a greater or lesser number of layers depending on the desired circuit. That is to say the process of fabrication is applicable to other circuits and structures.
- the use of a polymer, preferably BCB as the dielectric between the coils has the functional rf and microwave frequencies, and yet this insulator allows for excellent inductive coupling while reducing greatly the capacitive coupling.
- the polymer allows the use of processing steps in the fabrication of the transformer that result in ease of manufacture and reliability of result. To this end, the polymer is relatively smooth for ease of metal deposition and readily processed using standard large scale IC processing techniques .
- the transformer that results through the preferred materials and processing steps can be made in very small dimension and in large scale production.
- the ill effects of parasitic elements such as capacitance having been reduced, operational transformer frequencies in the rf and microwave spectra are readily realized.
- FIG. 1 is a schematic diagram of a balun transformer.
- Figure 2 is a plan view of a balun transformer fabricated by the present invention.
- Figures 3-10 show cross-sectional views of the fabricated transformer by the present invention in selected sequential steps of the process.
- Figure 11 is a schematic circuit diagram of a mixer using balun transformers.
- the invention of the present disclosure relates to a transformer fabricated using multilayer process technology with a polymer dielectric offering advantages in size, cost, reliability of the device as well as ease of manufacture in large scale.
- transformers envisioned in the present invention are the use of a multilayer device which is the purview of the present invention are balun transformers, directional couplers, quadrature hybrids, and power dividers.
- a feature of the invention of the present disclosure is the ability to effect various circuits by application of the basic process of the invention. That is to say that by the selective placement of the metal lines, vias, bond pads and other required elements by the process steps described herein enables the fabrication of devices for use at high frequency with the described advantages of high inductive coupling and low capacitive coupling.
- the miniature transformer circuits of the present device are preferably less than 1mm allowing for very large scale manufacture on a single glass substrate wafer.
- balun transformer For ease of discussion, an embodiment of the present invention drawn to a balun transformer will be described. As stated, the present invention has other applications, and the balun is merely described in detail for exemplary purposes.
- the circuit of the desired transformer is effected by selective placement of the spirals, vias, bonding and circuit elements such as capacitors by the process of the present invention described herein.
- the desired interconnection is effected by the selective placement of the elements and vias and circuits within the purview of the artisan of ordinary skill are readily fabricated through the teachings of the present disclosure.
- the schematic of a typical balun transformer is shown in Figure 1. A balun transformer single ended input into a pair of differential outputs having equal amplitude and opposite phase.
- balun transformers have application in single and double balanced mixer applications as well as other applications in heterodyne transceiver systems.
- FIG 2 the plan view of a balun transformer fabricated by the process of the present invention is shown.
- the input bond pad 201, the input ground pad 202, the output ground pads 203 and the output bond pads 204 and 205 are located on the surface of the substrate.
- the transformer windings in Figure 2 are those of the top layer of the transformer, with three windings 205,206 and 207 located directly above the windings of the lower two layers of the transformer (and thus not seen) .
- This structure allows for a desired number of turns that enable a higher inductance value, while not sacrificing Q value due to current crowding. That is to say, if the open through the plane of the spiral) is decreased too much, there is a corresponding reduction in the Q value.
- the benefits of reduced size must be weighed against the reduction in the Q factor for the reasons above stated.
- the number of turns in fact increases the inductance, but also increases the capacitive coupling between two layers which reduces accordingly the self resonant frequency of the transformer. Accordingly, the number of turns must be determined balancing the benefit of increased inductance against the detriment of increased capacitive coupling.
- Figure 10 shows the transformer in cross section along the line X-X' of Figure 2. To this end, the transformer windings are shown in three layers at 1001 through 1011 with the vias 1012 providing the interconnection between the layers of the transformer.
- the glass substrate is preferably borosilicate and has a dielectric constant of about 4.1, and a loss tangent on the order of 0.002 at microwave frequencies.
- the amorphous glass substrate shows the deposition of the metal for a bond pad 301 and a capacitor 302 for the balun transformer. All metal layers of the present invention are fabricated by standard lift-off techniques, eliminating the need for metal etching and the drawbacks of undercutting that arise through etching.
- the lift-off techniques require the use of a suitable photoresist having a negative profile, and standard evaporation techniques are used to deposit the metal.
- the negative profile of the photoresist is obtained while reversing the polarity of the resist with a post-exposure bake. Since evaporated metal is deposited in a direction orthogonal to the substrate surface, the negative profile of the resist ensures a break between the metal on top of the resist and metal on the substrate.
- the metal on the resist is then removed with a water jet, and the resist is stripped thus leaving behind a clean metal pattern on the substrate.
- the metal lines of the transformer of the present are on the order of 25 microns wide and are 2-5 microns thick.
- the metal layer of the first layer is preferably Ti-Pt-Au-Ti and is used for the wire bond pads 301, the lower capacitor plates 302 and the underpass conductors. Titanium is used to enhance adhesion, Pt is used as a diffusion barrier and Au is used for compatibility with standard wire-bond processes.
- the preferred metal scheme is Ti-Pt-Ag-Pt-Ti . Less preferably, gold can be used in place of silver but affects the price of the processing. Furthermore, other metal schemes are possible for use as the metal lines . possible and within the purview of the invention.
- the deposition of the first metal layer as shown in Figure 3, the deposition of a suitable dielectric 401, preferably silicon nitride is effected.
- the SiN film acts as an insulator for the capacitor 302, and for the cross-overs.
- the SiN film is deposited by PECVD (Plasma Enhanced CVD) at 300° C. Thereafter standard photolithigraphic and plasma etching techniques are used to etch the SiN film 401 wherever electrical contact is required.
- PECVD Pullasma Enhanced CVD
- standard photolithigraphic and plasma etching techniques are used to etch the SiN film 401 wherever electrical contact is required.
- the metal transformer windings 501 of the first layer of the transformer is effected by the above described technique.
- the first layer of polymer insulator 601 is deposited.
- This layer is preferably BCB, although other materials such as photosensitive or non-photosensitive polyimides will suffice.
- the BCB layer is deposited, the Vias for interlevel connection as well as bond pad connections is effected.
- the deposition of the BCB as well as the Via etching is effected by the techniques disclosed in "Processing and Microwave Characterization of Mul tilevel Interconnects Using Benzocyclobutne Dielectric" , by P. Chinoy and James Tajadod, IEEE Transactions on Components, Hybrids and Manufacturing Technology, Vol. 16, No. 7, Nov.
- the layers of BCB are deposited preferably in a thickness of 3 microns, although the layers can be as thick as 20 microns. Furthermore, the BCB has a low moisture coefficient (on the order of 0.1%) which in addition to the advantages stated in the articles to Chinoy, et al . above has the advantage of ensuring that electrical properties do not change with the environment as well as makes it compatible with Ag metallization which is very reactive to water.
- a first version is photosensitive in which case the Vias 602 can be directly patterned by exposure to light
- a second non-photosensitive version in which case the Vias 602 are plasma etched through a photoresist or metal mask.
- the former is easier to process and the latter gives better planarization and thicker coatings.
- the better planarization allows for finer metal lines, and the thicker layers reduce capacitive coupling.
- the preferred technique is to deposit the lower two layers of polymer, for example BCB, that are photosensitive for ease of processing, while the top layer is non-photosensitive polymer, preferably BCB to planarize the entire structure of the transformer.
- FIG. 7 shows the completed metallization of the second layer.
- the next layer of BCB 801 is deposited and etched Vias 802 are effected.
- the third layer of windings 901 are deposited as shown in Figure 9, and the Vias are metallized as shown at 902 and a final layer of BCB 1013 is deposited as shown in Figure 10 with vias etched as at 1014.
- the Vias 1014 open up wire bond pads and saw streets to facilitate the dicing or sawing of the wafer into individual die or circuits.
- the ground plane 1015 of the transformer is effected by deposition of metal on the lower surface of the glass substrate.
- a balun transformer is fabricated as follows.
- the bond pad 301 and lower plate of the capacitor 302 have disposed thereon a layer of SiN.
- the coil windings 501 and upper plate of the capacitor 502 as well as the cross-over 503 are deposited. This forms the V- output 103 of the transformer.
- the resonating capacitors are further formed where the coil winding 501 and cross-over 503 overlies the bond pad 301 and lower plate of the capacitor 302.
- the metal coils 701 are then disposed to effect the input winding by way of the Via 303
- FIG. 11 shows a typical use of a balun transformer in a transceiver circuit.
- the balun 1104 is connected to a silicon schottky ring quad
- the high frequency signal from the rf input 1102 is mixed with a slightly lower frequency from a local oscillator 1105 and a range of multiple frequencies at the IF output 1106 is extracted and filtered to extract the desired signal output.
- the diced and packaged baluns are mounted on a common substrate such as a PCB and connected as needed to other components, active and passive, on the common substrate.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9517392A JP2000508116A (en) | 1995-10-31 | 1996-10-21 | RF transformer using multilayer metal polymer structure |
AU75184/96A AU7518496A (en) | 1995-10-31 | 1996-10-21 | Rf transformer using multilayer metal polymer structures |
EP96937708A EP0858666A1 (en) | 1995-10-31 | 1996-10-21 | Rf transformer using multilayer metal polymer structures |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US708995P | 1995-10-31 | 1995-10-31 | |
US60/007,089 | 1995-10-31 | ||
US61082596A | 1996-03-07 | 1996-03-07 | |
US08/610,825 | 1996-03-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997016836A1 true WO1997016836A1 (en) | 1997-05-09 |
Family
ID=26676489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/016876 WO1997016836A1 (en) | 1995-10-31 | 1996-10-21 | Rf transformer using multilayer metal polymer structures |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0858666A1 (en) |
JP (1) | JP2000508116A (en) |
KR (1) | KR100452022B1 (en) |
AU (1) | AU7518496A (en) |
WO (1) | WO1997016836A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000016349A1 (en) * | 1998-09-10 | 2000-03-23 | Bourns, Inc. | Integrated inductive components and method of fabricating such components |
EP1386522A1 (en) * | 2001-04-07 | 2004-02-04 | Russell F. Jewett | Rf power process apparatus and methods |
US7176550B2 (en) | 2001-08-14 | 2007-02-13 | Nxp B.V. | Method and device for forming a winding on a non-planar substrate |
US7338833B2 (en) * | 1999-10-15 | 2008-03-04 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
EP2256752A3 (en) * | 2009-05-27 | 2011-01-05 | STmicroelectronics SA | Millimetric wave transformer with high transformation ratio and low insertion losses |
CN102479605A (en) * | 2010-11-19 | 2012-05-30 | 英飞凌科技奥地利有限公司 | Transformer device and method for manufacturing a transformer device |
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US8385043B2 (en) | 2006-08-28 | 2013-02-26 | Avago Technologies ECBU IP (Singapoare) Pte. Ltd. | Galvanic isolator |
US8427844B2 (en) | 2006-08-28 | 2013-04-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Widebody coil isolators |
US7791900B2 (en) | 2006-08-28 | 2010-09-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolator |
US9019057B2 (en) | 2006-08-28 | 2015-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolators and coil transducers |
US20080278275A1 (en) | 2007-05-10 | 2008-11-13 | Fouquet Julie E | Miniature Transformers Adapted for use in Galvanic Isolators and the Like |
US8061017B2 (en) | 2006-08-28 | 2011-11-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Methods of making coil transducers |
US7948067B2 (en) | 2009-06-30 | 2011-05-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer isolator packages |
US8093983B2 (en) | 2006-08-28 | 2012-01-10 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Narrowbody coil isolator |
US7852186B2 (en) | 2006-08-28 | 2010-12-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer with reduced arcing and improved high voltage breakdown performance characteristics |
US9105391B2 (en) | 2006-08-28 | 2015-08-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | High voltage hold-off coil transducer |
US8258911B2 (en) | 2008-03-31 | 2012-09-04 | Avago Technologies ECBU IP (Singapor) Pte. Ltd. | Compact power transformer components, devices, systems and methods |
KR20130058340A (en) | 2011-11-25 | 2013-06-04 | 삼성전기주식회사 | Inductor and method for manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5363081A (en) * | 1992-07-09 | 1994-11-08 | Murata Manufacturing Co., Ltd. | Line transformer and manufacturing process thereof |
-
1996
- 1996-10-21 EP EP96937708A patent/EP0858666A1/en not_active Withdrawn
- 1996-10-21 JP JP9517392A patent/JP2000508116A/en active Pending
- 1996-10-21 KR KR10-1998-0703513A patent/KR100452022B1/en not_active IP Right Cessation
- 1996-10-21 AU AU75184/96A patent/AU7518496A/en not_active Abandoned
- 1996-10-21 WO PCT/US1996/016876 patent/WO1997016836A1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5363081A (en) * | 1992-07-09 | 1994-11-08 | Murata Manufacturing Co., Ltd. | Line transformer and manufacturing process thereof |
Non-Patent Citations (2)
Title |
---|
CHINOY P B ET AL: "PROCESSING AND MICROWAVE CHARACTERIZATION OF MULTILEVEL INTERCONNECTS USING BENZOCYCLOBUTENE DIELECTRIC", IEEE TRANSACTIONS ON COMPONENTS,HYBRIDS,AND MANUFACTURING TECHNOLOGY, vol. 16, no. 7, 1 November 1993 (1993-11-01), pages 714 - 719, XP000423131 * |
STRANDJORD A J G ET AL: "A PHOTOSENSITIVE-BCB ON LAMINATE TECHNOLOGY (MCM-LD)", PROCEEDINGS OF THE ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, WASHINGTON, MAY 1 - 4, 1994, no. CONF. 44, 1 May 1994 (1994-05-01), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 374 - 386, XP000479173 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000016349A1 (en) * | 1998-09-10 | 2000-03-23 | Bourns, Inc. | Integrated inductive components and method of fabricating such components |
US6249039B1 (en) | 1998-09-10 | 2001-06-19 | Bourns, Inc. | Integrated inductive components and method of fabricating such components |
US7338833B2 (en) * | 1999-10-15 | 2008-03-04 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
EP1386522A1 (en) * | 2001-04-07 | 2004-02-04 | Russell F. Jewett | Rf power process apparatus and methods |
EP1386522A4 (en) * | 2001-04-07 | 2008-08-13 | Russell F Jewett | Rf power process apparatus and methods |
US7176550B2 (en) | 2001-08-14 | 2007-02-13 | Nxp B.V. | Method and device for forming a winding on a non-planar substrate |
EP2256752A3 (en) * | 2009-05-27 | 2011-01-05 | STmicroelectronics SA | Millimetric wave transformer with high transformation ratio and low insertion losses |
CN102479605A (en) * | 2010-11-19 | 2012-05-30 | 英飞凌科技奥地利有限公司 | Transformer device and method for manufacturing a transformer device |
US9245684B2 (en) | 2010-11-19 | 2016-01-26 | Infineon Technologies Austria Ag | Method for manufacturing a transformer device on a glass substrate |
Also Published As
Publication number | Publication date |
---|---|
AU7518496A (en) | 1997-05-22 |
KR100452022B1 (en) | 2004-12-14 |
KR19990067493A (en) | 1999-08-25 |
JP2000508116A (en) | 2000-06-27 |
EP0858666A1 (en) | 1998-08-19 |
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