WO1996016436A1 - Method of making a chemical-mechanical polishing slurry and the polishing slurry - Google Patents
Method of making a chemical-mechanical polishing slurry and the polishing slurry Download PDFInfo
- Publication number
- WO1996016436A1 WO1996016436A1 PCT/US1995/013919 US9513919W WO9616436A1 WO 1996016436 A1 WO1996016436 A1 WO 1996016436A1 US 9513919 W US9513919 W US 9513919W WO 9616436 A1 WO9616436 A1 WO 9616436A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cmp
- slurry
- surfactant
- abrasive particles
- ferric salt
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 46
- 238000005498 polishing Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002245 particle Substances 0.000 claims abstract description 44
- 239000004094 surface-active agent Substances 0.000 claims abstract description 20
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 239000000375 suspending agent Substances 0.000 claims abstract description 11
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(III) nitrate Inorganic materials [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- 230000032683 aging Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- LXCFILQKKLGQFO-UHFFFAOYSA-N methylparaben Chemical compound COC(=O)C1=CC=C(O)C=C1 LXCFILQKKLGQFO-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000012141 concentrate Substances 0.000 claims description 4
- 229960004063 propylene glycol Drugs 0.000 claims description 4
- 235000013772 propylene glycol Nutrition 0.000 claims description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- 239000004292 methyl p-hydroxybenzoate Substances 0.000 claims description 3
- 235000010270 methyl p-hydroxybenzoate Nutrition 0.000 claims description 3
- 229960002216 methylparaben Drugs 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052721 tungsten Inorganic materials 0.000 abstract description 32
- 239000010937 tungsten Substances 0.000 abstract description 32
- 238000002474 experimental method Methods 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 20
- 230000007547 defect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000005299 abrasion Methods 0.000 description 6
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910001447 ferric ion Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 3 wt% Chemical compound 0.000 description 1
- FPFSGDXIBUDDKZ-UHFFFAOYSA-N 3-decyl-2-hydroxycyclopent-2-en-1-one Chemical compound CCCCCCCCCCC1=C(O)C(=O)CC1 FPFSGDXIBUDDKZ-UHFFFAOYSA-N 0.000 description 1
- 101100096664 Drosophila melanogaster B52 gene Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229940032296 ferric chloride Drugs 0.000 description 1
- 229940044631 ferric chloride hexahydrate Drugs 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- NQXWGWZJXJUMQB-UHFFFAOYSA-K iron trichloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].Cl[Fe+]Cl NQXWGWZJXJUMQB-UHFFFAOYSA-K 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000004686 pentahydrates Chemical class 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Definitions
- a polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by mechanical polishing of the wafer More particularly,
- composition for polishing a wafer having tungsten lines and vias through silicon dioxide dielectric layers where the slurry has a high removal rate selectivity for the tungsten in relation to the silicon dioxide removal rate.
- Integrated circuit complexity has continued to evolve placing increasingly more demanding speci ications on the processes used in their manufacture.
- the requirement for increasing the density of active devices on an individual chip has escalated, the requirement for greater flatness, over long distance and short distance, on the surfaces, top and bottom, of the wafer has also evolved.
- a flat surface is desirable for several reasons. Flatness is a requirement for cooperation with the optical focusing characteristics of optical stepper devices. As the optical lens requirements for increased resolution has increased, the depth of field of the lens has decreased. Also, attachment of the interconnection metallization to their underlayer is improved if the metal is not required to pass over abrupt underlying steps. In addition, flatness improves ability to fill via holes and lines through apertures in the dielectric.
- CMP chemical-mechanical polishing
- CMP enhances the removal of surface material over large distances and short distances by simultaneously abrading the surface while a chemical etchant selectively attacks the surface.
- CMP is becoming a preferred method of planarizing tungsten interconnects, vias and contacts.
- CMP tungsten processing has shown significantly improved process windows and defect levels over standard tungsten dry etch-back processing.
- One significant advantage of CMP tungsten processing is that it has a highly selective polish rate for tungsten as compared to the dielectric. This selectivity allows for over-polishing while still achieving a flat tungsten
- a feature of this invention is that it provides a stable polish rate over a wide
- FIG. 2 is a normalized plot of removal rate for various wt% of Fe(NO 3 ) 3 •
- FIG. 3 is a chart depicting the average total defect count for slurries made by different mixing sequences.
- FIG. 4 is a chart depicting the oxide removal rate and tungsten selectivity for different slurry batches.
- FIG. 5 is chart of tungsten removal rate and uniformity for different ferric salt oxidizers.
- FIG. 6 is a graph of the general shape of the change in defect count as a function of aging for the slurry of this invention.
- Our slurry comprises abrasive particles of a selected diameter, a ferric salt oxidizer and a suspension agent. We have also discovered that it is beneficial to follow an order of adding and of mixing the slurry components for optimum results.
- the suspension agent should be mixed thoroughly with the abrasive particle aqueous concentrate before adding diluted oxidizer up to the final volume.
- planarization results can be still further improved if the completely mixed slurry is allowed to age for one day or more before being used in that scratch count is still further diminished. While one day of aging improves the scratch results, significant further improvement is obtained with longer aging of more than three days
- the abrasive particles can be any of the commonly used abrasives such as alumina ( Al 2 O 3 ), silicon carbide (SiC), Ceria (CeO 2 ), silicon nitride (Si 3 N 4 ) and silicon dioxide (SiO 2 ).
- alumina Al 2 O 3
- SiC silicon carbide
- CeO 2 Ceria
- Si 3 N 4 silicon nitride
- SiO 2 silicon dioxide
- the median diameter of the prior art slurry particles are 0.400 microns, but for our slu ⁇ y we prefer a median particle size of less than 0.4 microns, preferably 0.220 microns.
- the preferred distribution of particle size is much tighter than in the prior art also.
- Our preferred distribution is a one sigma deviation of 0.050 microns or less. We have determined through experimentation that both of these dimensions are important to
- the particle sizes used in prior CMP slurries were in the range of 0.4 to 0.7 micron diameter or larger with little attention to the tightness of the distribution.
- the preferred oxidizer is a ferric salt, selected from the group consisting of Fe(NO 3 ) 3 • 9H,O, FeCl 3 • 6H 2 O, Fej(SO 4 ) 3 • 5H 2 O, and FeNH 4 (SO 4 ) 2 • 12H 2 O.
- the suspension agent is preferably an aqueous based surfactant to improve the colloidal behavior of the abrasive particles in the H 2 O system. For the purposes of this
- the suspension agent can also be formulated from the following classes: 1 ) glycols such as ethylene glycol, propylene glycol and glycerol;
- polyethcrs such as polyethylene glycol
- the oxidizer component has other members of the class. Representative
- Fe (III) compounds such as the following: Ferric chloride hexahydrate, FeCl, • 6H,O
- Dummy Wafers Tungsten Dummy wafers identical to test monitors described above, except for the W thickness pre- measurement. Oxide dummv wafers coated with 2500 A
- Metrology tool Prometrix RS-55. Pre and post polish measurements taken on 49 sites across each wafer with 9mm edge exclusion. Slurry agitation: Constant agitation during testing. PROCESS PARAMETERS
- Process Cycle variable time, 5 psi, 25 rpm carrier, 100 rpm table, 150 ml/min slu ⁇ y flow.
- Loading Sequence For each of seven slurry mixture text compositions selected, perform polish test on 8 tungsten dummy wafers for 220 sec and 4 tungsten Test Monitor wafers for 60 seconds.
- Test Compositions Al 2 O 3 -- 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt% and 7 wt%.
- the Fe(NO 3 ) 3 • 9H 2 O is fixed at 5 wt% for all slurries used in Experiment 1. This experiment, as shown in FIG. 1, has a nearly constant W removal rate of 450 ⁇ A/min — 490 ⁇ A/min from 2-6 wt% of abrasion particles of Al,O 3 . Below 2 wt%
- the removal rate is substantially reduced.
- the removal rate is essentially independent of the alumina concentration. This suggests that the removal rate depends more on the oxidation rate of the elemental tungsten near the surface and that at these wt% of particles the tungsten oxide is being removed about as fast as its being formed. It is not understood why the curve shows a removal rate drop-off at the percentages above 6 wt%.
- the prior CMP tungsten polishing publications teach that the polishing rate is linearly proportional to the concentration of the alumina particles in the concentration range of 3 to 7 wt. percent. However, our experiment shows that the lower
- FIG. 2 for Experiment 2 shows the results of W removal rate plotted normalized against removal rate for 5 wt% Fe(NO 3 ) 3 • 9H 2 O.
- the results show a strong W removal rate dependence on concentration of Fe 3+ between 3 wt% to 5 wt% ferric nitrate.
- the removal rate is nearly constant for a fixed 2.8 wt% alumina concentration.
- surfactant used was a commercially available aqueous mixture of propylene glycol and methyl paraben from Universal Photonics Inc., sold under trade name EVERFLO.
- the order of mixing the slurry components also had an unexpected effect on the results.
- Batch A Surfactant was added to container holding alumina and ferric nitrate, previously diluted to near the final volume.
- Batch B Surfactant was added to alumina concentrate. After brief stirring to homogenize the mixture, diluted ferric nitrate was added up to the final volume.
- Batch C Surfactant added to alumina concentrate and mixed by a magnetically driven stirrer for 2 hours, then the diluted oxidizer, ferric nitride, was added to make up the final batch volume.
- B Slu ⁇ y Composition
- Polishing in Strasbaugh carried out at 5 psi spindle down force, 25 rpm spindle rotation, 100 rpm table rotation.
- a polishing pad was wet-idled overnight. The pad was pre-
- FIG. 3 shows that when performing CMP using no surfactant that
- the suspension agent allows the suspension agent to engage and completely coat each alumina panicle by nature of the organic surfactant molecules making the particle surface non-polar. It is believed that this precludes the particle from acquiring a charge from the oxidizer. thereby preventing agglomeration. Accordingly, when the
- the oxide removal rate As seen in FIG. 4, the oxide removal rate
- the scratch count decreases dramatically over the six-day aging period.
- the decrease defect count is decreased to less than 10% from the one-day defect count value.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95938941A EP0792515A1 (en) | 1994-11-18 | 1995-10-23 | Method of making a chemical-mechanical polishing slurry and the polishing slurry |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34232694A | 1994-11-18 | 1994-11-18 | |
US08/342,326 | 1994-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996016436A1 true WO1996016436A1 (en) | 1996-05-30 |
Family
ID=23341343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1995/013919 WO1996016436A1 (en) | 1994-11-18 | 1995-10-23 | Method of making a chemical-mechanical polishing slurry and the polishing slurry |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0792515A1 (en) |
WO (1) | WO1996016436A1 (en) |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998005066A2 (en) * | 1996-07-26 | 1998-02-05 | Speedfam Corporation | Methods and apparatus for the in-process detection and measurement of thin film layers |
EP0831136A2 (en) * | 1996-09-24 | 1998-03-25 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
WO1998018159A1 (en) * | 1996-10-18 | 1998-04-30 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
EP0845512A1 (en) * | 1996-12-02 | 1998-06-03 | Fujimi Incorporated | Polishing composition |
WO1998023697A1 (en) * | 1996-11-26 | 1998-06-04 | Cabot Corporation | Composition and method for polishing rigid disks |
EP0846742A2 (en) * | 1996-12-09 | 1998-06-10 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
EP0860488A1 (en) * | 1997-02-21 | 1998-08-26 | Siemens Aktiengesellschaft | Polishing composition and method of polishing end surfaces of light guides |
WO1998042791A1 (en) * | 1997-03-26 | 1998-10-01 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
WO1998044061A1 (en) * | 1997-04-02 | 1998-10-08 | Advanced Chemical Systems International, Inc. | Planarization composition for removing metal films |
US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
EP0930978A1 (en) * | 1996-09-27 | 1999-07-28 | Rodel, Inc. | Composition and method for polishing a composite |
EP0931118A1 (en) * | 1997-07-08 | 1999-07-28 | Rodel Holdings Inc. | Composition and method for polishing a composite comprising titanium |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5997620A (en) * | 1997-01-21 | 1999-12-07 | Fujimi Incorporated | Polishing composition |
US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6171352B1 (en) * | 1998-07-23 | 2001-01-09 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6217410B1 (en) | 1996-07-26 | 2001-04-17 | Speedfam-Ipec Corporation | Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing |
US6220934B1 (en) | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6303049B1 (en) | 1999-09-01 | 2001-10-16 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
US6347978B1 (en) | 1999-10-22 | 2002-02-19 | Cabot Microelectronics Corporation | Composition and method for polishing rigid disks |
US6383065B1 (en) | 2001-01-22 | 2002-05-07 | Cabot Microelectronics Corporation | Catalytic reactive pad for metal CMP |
US6508952B1 (en) | 1999-06-16 | 2003-01-21 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
US6514301B1 (en) | 1998-06-02 | 2003-02-04 | Peripheral Products Inc. | Foam semiconductor polishing belts and pads |
EP1283250A1 (en) * | 2001-08-09 | 2003-02-12 | Fujimi Incorporated | Polishing composition and polishing method employing it |
SG94338A1 (en) * | 1999-09-20 | 2003-02-18 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
US6569350B2 (en) | 1996-12-09 | 2003-05-27 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6593239B2 (en) | 1996-12-09 | 2003-07-15 | Cabot Microelectronics Corp. | Chemical mechanical polishing method useful for copper substrates |
US6734110B1 (en) | 1999-10-14 | 2004-05-11 | Taiwan Semiconductor Manufacturing Company | Damascene method employing composite etch stop layer |
US6736714B2 (en) | 1997-07-30 | 2004-05-18 | Praxair S.T. Technology, Inc. | Polishing silicon wafers |
WO2004104122A2 (en) * | 2003-05-26 | 2004-12-02 | Showa Denko K.K. | Polishing composition for magnetic disks comprising a surface cleaning agent and polishing method |
JP2008277848A (en) * | 1996-07-26 | 2008-11-13 | Ekc Technol Inc | Chemical mechanical polishing composition and process |
US7718102B2 (en) | 1998-06-02 | 2010-05-18 | Praxair S.T. Technology, Inc. | Froth and method of producing froth |
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US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
EP0561132A1 (en) * | 1992-02-26 | 1993-09-22 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD |
US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
-
1995
- 1995-10-23 EP EP95938941A patent/EP0792515A1/en not_active Ceased
- 1995-10-23 WO PCT/US1995/013919 patent/WO1996016436A1/en not_active Application Discontinuation
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