WO1996004674A3 - A self-aligned gate field emitter device and methods for producing the same - Google Patents

A self-aligned gate field emitter device and methods for producing the same Download PDF

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Publication number
WO1996004674A3
WO1996004674A3 PCT/GB1995/001760 GB9501760W WO9604674A3 WO 1996004674 A3 WO1996004674 A3 WO 1996004674A3 GB 9501760 W GB9501760 W GB 9501760W WO 9604674 A3 WO9604674 A3 WO 9604674A3
Authority
WO
WIPO (PCT)
Prior art keywords
field emitter
self
producing
metal layer
methods
Prior art date
Application number
PCT/GB1995/001760
Other languages
French (fr)
Other versions
WO1996004674A2 (en
Inventor
Philip Charles Allen
Original Assignee
Central Research Lab Ltd
Philip Charles Allen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Research Lab Ltd, Philip Charles Allen filed Critical Central Research Lab Ltd
Priority to JP8506293A priority Critical patent/JPH10503877A/en
Priority to DE69511877T priority patent/DE69511877T2/en
Priority to EP95926455A priority patent/EP0774159B1/en
Priority to US08/776,540 priority patent/US5818153A/en
Publication of WO1996004674A2 publication Critical patent/WO1996004674A2/en
Publication of WO1996004674A3 publication Critical patent/WO1996004674A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type

Abstract

A field emitter and fabrication method therefore is described in which the gate is formed around and substantially encloses the emitter. The emitter is formed on a silicon substrate and is in the form of a pyramidal structure (4). The surface of the pyramid (4) has formed thereon an oxide layer (6). On to the oxide layer (6) is formed a metal layer (8) and on to the metal layer (8) a layer of photoresist (10) is deposited. The whole device is baked until the photoresist (10) is drawn, by surface tension, towards the base of the pyramid to expose the metal layer (8). Etching of the metal layer (8) and the oxide layer (6) produces the finished device which may suitably be employed as a switch in an electronic circuit.
PCT/GB1995/001760 1994-08-05 1995-07-25 A self-aligned gate field emitter device and methods for producing the same WO1996004674A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8506293A JPH10503877A (en) 1994-08-05 1995-07-25 Self-aligned gate type field emission device and method of manufacturing the same
DE69511877T DE69511877T2 (en) 1994-08-05 1995-07-25 FIELD DETECTING DEVICE WITH SELF-ADJUSTED GATE ELECTRODE AND METHOD FOR THE PRODUCTION THEREOF
EP95926455A EP0774159B1 (en) 1994-08-05 1995-07-25 A self-aligned gate field emitter device and method for producing the same
US08/776,540 US5818153A (en) 1994-08-05 1995-07-25 Self-aligned gate field emitter device and methods for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9415892.0 1994-08-05
GB9415892A GB9415892D0 (en) 1994-08-05 1994-08-05 A self-aligned gate field emitter device and methods for producing the same

Publications (2)

Publication Number Publication Date
WO1996004674A2 WO1996004674A2 (en) 1996-02-15
WO1996004674A3 true WO1996004674A3 (en) 1996-05-02

Family

ID=10759477

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1995/001760 WO1996004674A2 (en) 1994-08-05 1995-07-25 A self-aligned gate field emitter device and methods for producing the same

Country Status (6)

Country Link
US (1) US5818153A (en)
EP (1) EP0774159B1 (en)
JP (1) JPH10503877A (en)
DE (1) DE69511877T2 (en)
GB (1) GB9415892D0 (en)
WO (1) WO1996004674A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789382A1 (en) * 1996-02-09 1997-08-13 International Business Machines Corporation Structure and method for fabricating of a field emission device
JP3079993B2 (en) * 1996-03-27 2000-08-21 日本電気株式会社 Vacuum micro device and manufacturing method thereof
KR100365444B1 (en) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 Vacuum micro device and image display device using the same
US6130106A (en) * 1996-11-14 2000-10-10 Micron Technology, Inc. Method for limiting emission current in field emission devices
US5956611A (en) * 1997-09-03 1999-09-21 Micron Technologies, Inc. Field emission displays with reduced light leakage
US6376983B1 (en) * 1998-07-16 2002-04-23 International Business Machines Corporation Etched and formed extractor grid
US6552477B2 (en) * 1999-02-03 2003-04-22 Micron Technology, Inc. Field emission display backplates
US6822386B2 (en) * 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
US6235179B1 (en) * 1999-05-12 2001-05-22 Candescent Technologies Corporation Electroplated structure for a flat panel display device
US6596146B1 (en) 2000-05-12 2003-07-22 Candescent Technologies Corporation Electroplated structure for a flat panel display device
US6626720B1 (en) * 2000-09-07 2003-09-30 Motorola, Inc. Method of manufacturing vacuum gap dielectric field emission triode and apparatus
TW483025B (en) * 2000-10-24 2002-04-11 Nat Science Council Formation method of metal tip electrode field emission structure
GB2372146B (en) * 2001-02-09 2003-03-26 Leica Microsys Lithography Ltd Cathode
US20050109533A1 (en) * 2002-08-27 2005-05-26 Fujitsu Limited Circuit board and manufacturing method thereof that can easily provide insulating film between projecting electrodes
US6686250B1 (en) 2002-11-20 2004-02-03 Maxim Integrated Products, Inc. Method of forming self-aligned bipolar transistor
US7317278B2 (en) * 2003-01-31 2008-01-08 Cabot Microelectronics Corporation Method of operating and process for fabricating an electron source
JP4112449B2 (en) * 2003-07-28 2008-07-02 株式会社東芝 Discharge electrode and discharge lamp

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays
US5186670A (en) * 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays
US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
US5186670A (en) * 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
TRUJILLO J T ET AL: "FABRICATION OF GATED SILICON FIELD-EMISSION CATHODES FOR VACUUM MICROELECTRONICS AND ELECTRON-BEAM APPLICATIONS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 11, no. 2, 1 March 1993 (1993-03-01), pages 454 - 458, XP000364848 *
Z LISA ZHANG ET AL: "INTEGRATED SILICON PROCESS FOR MICRODYNAMIC VACUUM FIELD EMISSION CATHODES", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 11, no. 6, 1 November 1993 (1993-11-01), pages 2538 - 2543, XP000423378 *

Also Published As

Publication number Publication date
GB9415892D0 (en) 1994-09-28
EP0774159B1 (en) 1999-09-01
DE69511877T2 (en) 2000-06-08
US5818153A (en) 1998-10-06
EP0774159A2 (en) 1997-05-21
DE69511877D1 (en) 1999-10-07
WO1996004674A2 (en) 1996-02-15
JPH10503877A (en) 1998-04-07

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