WO1995023428A3 - Chemical vapor deposition chamber - Google Patents

Chemical vapor deposition chamber Download PDF

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Publication number
WO1995023428A3
WO1995023428A3 PCT/US1995/002138 US9502138W WO9523428A3 WO 1995023428 A3 WO1995023428 A3 WO 1995023428A3 US 9502138 W US9502138 W US 9502138W WO 9523428 A3 WO9523428 A3 WO 9523428A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
substrate
support member
mis
cracked
Prior art date
Application number
PCT/US1995/002138
Other languages
French (fr)
Other versions
WO1995023428A2 (en
Inventor
Ashok Sinha
Mei Chang
Ilya Perlov
Karl Littau
Alan Morrison
Lawrence Chung-Lai Lei
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/200,079 external-priority patent/US5800686A/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP52241195A priority Critical patent/JP4108119B2/en
Priority to EP95911831A priority patent/EP0746874A1/en
Publication of WO1995023428A2 publication Critical patent/WO1995023428A2/en
Publication of WO1995023428A3 publication Critical patent/WO1995023428A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Abstract

A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
PCT/US1995/002138 1994-02-23 1995-02-21 Chemical vapor deposition chamber WO1995023428A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP52241195A JP4108119B2 (en) 1994-02-23 1995-02-21 Improved chemical vapor deposition chamber
EP95911831A EP0746874A1 (en) 1994-02-23 1995-02-21 Chemical vapor deposition chamber

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/200,079 US5800686A (en) 1993-04-05 1994-02-23 Chemical vapor deposition chamber with substrate edge protection
US08/200,862 1994-02-23
US08/200,862 US5695568A (en) 1993-04-05 1994-02-23 Chemical vapor deposition chamber
US08/200,079 1994-02-23

Publications (2)

Publication Number Publication Date
WO1995023428A2 WO1995023428A2 (en) 1995-08-31
WO1995023428A3 true WO1995023428A3 (en) 1995-11-23

Family

ID=26895448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/002138 WO1995023428A2 (en) 1994-02-23 1995-02-21 Chemical vapor deposition chamber

Country Status (3)

Country Link
EP (1) EP0746874A1 (en)
JP (1) JP4108119B2 (en)
WO (1) WO1995023428A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components
US9481608B2 (en) 2005-07-13 2016-11-01 Applied Materials, Inc. Surface annealing of components for substrate processing chambers

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
KR19980071011A (en) * 1997-01-24 1998-10-26 조셉 제이. 스위니 High Temperature and High Flow Rate Chemical Vapor Deposition Apparatus and Related Deposition Methods
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
AT405655B (en) * 1997-03-26 1999-10-25 Sez Semiconduct Equip Zubehoer METHOD AND DEVICE FOR SINGLE-SIDED EDITING DISC-SHAPED OBJECTS
AT411304B (en) * 1997-06-18 2003-11-25 Sez Ag SUPPORT FOR DISC-SHAPED ITEMS, IN PARTICULAR SILICON WAFER
KR100269315B1 (en) * 1997-11-24 2000-11-01 윤종용 Method for fabricating a semiconductor device using single wafer loading type apparatus adoping lamp heating method
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
MY120869A (en) * 2000-01-26 2005-11-30 Matsushita Electric Ind Co Ltd Plasma treatment apparatus and method
US6494955B1 (en) * 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP4009100B2 (en) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 Substrate heating apparatus and substrate heating method
JP4083512B2 (en) * 2002-08-30 2008-04-30 東京エレクトロン株式会社 Substrate processing equipment
JP3996502B2 (en) * 2002-12-27 2007-10-24 株式会社アルバック Processing equipment with hot plate surface cover mechanism
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
JP2011525719A (en) * 2008-06-24 2011-09-22 アプライド マテリアルズ インコーポレイテッド Pedestal heater for low temperature PECVD applications
JP5723612B2 (en) * 2011-01-28 2015-05-27 リンテック株式会社 Plate member support device
US10770336B2 (en) * 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
JP2023034003A (en) 2021-08-30 2023-03-13 東京エレクトロン株式会社 Apparatus for depositing film on substrate and method for depositing film on substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2171877A1 (en) * 1972-02-14 1973-09-28 Commissariat Energie Atomique Semiconductor coating appts - giving improved uniformity of coating
EP0467623A2 (en) * 1990-07-16 1992-01-22 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
WO1994001597A1 (en) * 1992-07-07 1994-01-20 Cobrain N.V. Apparatus and method for treating a wafer of semiconductor material

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100243784B1 (en) * 1990-12-05 2000-02-01 조셉 제이. 스위니 Passive shield for cvd wafer processing which provides front side edge exclusion and prevents backside depositions
JPH05109879A (en) * 1991-10-21 1993-04-30 Seiko Epson Corp Conductive housing container and conveyance container
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2171877A1 (en) * 1972-02-14 1973-09-28 Commissariat Energie Atomique Semiconductor coating appts - giving improved uniformity of coating
EP0467623A2 (en) * 1990-07-16 1992-01-22 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
WO1994001597A1 (en) * 1992-07-07 1994-01-20 Cobrain N.V. Apparatus and method for treating a wafer of semiconductor material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0746874A1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9481608B2 (en) 2005-07-13 2016-11-01 Applied Materials, Inc. Surface annealing of components for substrate processing chambers
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components

Also Published As

Publication number Publication date
JPH09509534A (en) 1997-09-22
JP4108119B2 (en) 2008-06-25
EP0746874A1 (en) 1996-12-11
WO1995023428A2 (en) 1995-08-31

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