WO1986000468A1 - Hierarchical configurable gate array - Google Patents

Hierarchical configurable gate array Download PDF

Info

Publication number
WO1986000468A1
WO1986000468A1 PCT/US1985/001019 US8501019W WO8600468A1 WO 1986000468 A1 WO1986000468 A1 WO 1986000468A1 US 8501019 W US8501019 W US 8501019W WO 8600468 A1 WO8600468 A1 WO 8600468A1
Authority
WO
WIPO (PCT)
Prior art keywords
cluster
level
region
elements
functions
Prior art date
Application number
PCT/US1985/001019
Other languages
French (fr)
Inventor
Herbert E. Heath
Jay M. Block
Original Assignee
Hughes Aircraft Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Company filed Critical Hughes Aircraft Company
Publication of WO1986000468A1 publication Critical patent/WO1986000468A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays

Definitions

  • the disclosed invention generally relates to configurable gate arrays (CGA's), and is particularly directed to a configurable gate array which utilizes hierarchical cluster levels.
  • Custom integrated circuits typically involve expensive custom design to provide a one-of-a-kind integrated circuit for specific functions- While extremely costly to design, such custom integrated circuits are typically intended for large quantity produc ⁇ tion.
  • a semicustom integrated circuit generally utilizes a "standardized" integrated circuit chip which includes a plurality of individual circuit elements arranged * . ' in arrays. The integrated circuit chip is then adapted to provide desired electrical functions by selectively interconnecting the circuit elements. For example, such interconnections may be accomplished by appropriate metalization processing.
  • a "standardized" integrated circuit chip is basically a foundation on which the desired logic functions are achieved by selective interconnections of the circuit elements..
  • One form of semicustom logic design and manufacture is based on integrated circuit gate arrays produced by different companies.
  • an integrated circuit gate array includes a plurality of individual logic gates arranged in arrays which typically are not interconnected. The desired logic functions are then achieved by selective interconnection of the inputs and outputs of the gates. As the number of gates in a gate array increases, i.e., as gate density increases, interconnection routing rapidly becomes more complex and difficult. As a result of interconnection difficulties the gate utilization factor, i.e., the percentage of gates actually utilized, decreases.
  • Another object of the invention is to provide an improved configurable gate array wherein the areas of the interconnect regions are minimized.
  • Still another object of the invention is to provide a hierarchical configurable gate array which includes increasingly larger gate cluster levels, and wherein the area of interconnect regions for the interconnection between clusters of the same level increase as the level increases.
  • a further object of the invention is to provide a hierarchical configurable gate array wherein a given gate cluster level forms a component of the next higher gate cluster level.
  • Another object of the invention is to provide a hierarchical configurable gate array having cluster levels of respectively increasing numbers of gates, and wherein the respective areas of the interconnect regions are determined as a function of the respective levels of interconnection.
  • Still another object of the invention is to provide a hierarchical configurable gate array having cluster levels wherein each level can assume the identity of a component having inputs and outputs.
  • a configurable gate array having a first level cluster comprising N multi-terminal circuit components, wherein each component provides a canonical function and N is an integer; a second level cluster comprising N first level clusters; and further level clusters wherein each level cluster includes N clusters of the next lower level.
  • Each of the N circuit components or clusters is an element of its respective level cluster, and interconnect regions are provided for interconnection between the N elements of a level cluster. The respective areas or sizes of such interconnect regions depend on the cluster level formed by the elements to be interconnected within each cluster. Selected input or output ports for each element are available at more than one location for interconnection between the elements of such cluster.
  • Figure 1 is a top plan schematic view illustrating the first level cluster of the disclosed hierarchical configurable gate array, the elements forming the first level cluster, and the interconnect region for the elements.
  • Figure 2 is a schematic diagram of a NAND gate which by way of example can be an element of the first cluster level of Figure 1.
  • Figure 3 is a schematic diagram of a NOR gate which by way of example can be an element of the first cluster level of Figure 1.
  • Figure 4 is a top plan schematic view of the second level cluster of the disclosed hierarchical configurable gate array, the elements forming the second level cluster, and the interconnect region for the elements.
  • Figure 5 is a top plan schematic view of the fourth level cluster of the disclosed hierarchical configurable gate array and the third level cluster which form the elements of the fourth level cluster.
  • the level 1 cluster includes four (4) elements 11 distributed about a cruciform shaped interconnect region 13. The width across each area of the cruciform is identified as "D."
  • Each of the level 1 cluster elements 11 is a multi-terminal circuit- component which provides a canonical function. Examples of such multi-terminal circuit components include NAND gates and NOR gates.
  • Each of the level 1 cluster elements 11 may be different components. However, for ease of reference, the level 1 cluster elements 11 will be generally discussed as being identical and will also be generally discussed as gates.
  • the X and Y axes adjacent the level 1 cluster 10 identify reference directions which will be utilized in the description of the level 1 cluster 10 as well as all other clusters of different levels.
  • the cruciform shaped interconnect region 13 of the level 1 cluster 10 and the interconnect, regions described below have arms extending in the X and Y directions.
  • the disclosed configurable gate array utilizes complementary metal-oxide semiconductor (CMOS) technology.
  • Figure 2 illustrates a typical NAND gate in CMOS form.
  • Figure 3 illustrates a typical NOR gate in CMOS form.
  • IIL integrated injection logic
  • ECL emitter coupled logic
  • NMOS N-channel MOS
  • each level 1 element 11 is schematically shown by elongated input/output ( I/ ⁇ ) contacts which are identified in conformity with Figures 2 and 3. Specifically, VQD identifies the contact for the supply voltage V _,_ j GROUND identifies the ground contact; A and B identify the gate inputs; and OUT identifies the gate output.
  • I/ ⁇ input/output
  • Each element 11 is regarded as having- four sides defined by the ends of the elongated I/ ⁇ contacts identifed previously. Such four sides form the periphery of each respective element 11.
  • the elongated I/ ⁇ contacts of the level 1 elements 11 illustrate the principle of "multiporting" as utilized in the invention. Each I/ ⁇ contact on a particular side of a level 1 element 11 is available on the opposite side. Thus, each I/ ⁇ contact of each level 1 element 11 is accessible on the level 1 interconnect region 13.
  • the level 1 cluster 10 also has a periphery formed by the four sides defined by the_ outermost contacts. Since the level 1 cluster is an element of the level 2 cluster (discussed below) , each I/O contact of the level 1 cluster that is to be connected to another cluster is preferably available on two sides, and preferably on opposite sides. The same multiporting principle is applied to higher cluster levels. 6a
  • Multiporting achieves the accessiblity of each contact or function on two sides of the cluster element region, and also forces connections between clusters of the same level to originate at the periphery of each cluster. While accessiblity of 1/0's on opposite sides of
  • each cluster is like a "black box" for providing functins which are accessible at the multiported I/ ⁇ contacts located about its periphery.
  • Multiporting in the level 1 and higher clusters is achieved by appropriate interconnection between elements of each cluster. For various design reasons, multiporting may not always be feasible or practical or beneficial. Accordingly, the requirement of multiporting can be relaxed to some degree by determining in the actual application design process which I/ ⁇ 's for each cluster do not require the accessibility provided by multiporting. Any requirement of multiporting referred to herein is subject to this qualification.
  • FIG 4 shown therein is a top plan schematic view of a level 2 cluster 20 which includes as its elements four (4) level 1 clusters 10 distributed about a cruciform shaped level 2 interconnect region 15.
  • the I/ ⁇ contacts of the level 2 cluster are located about the periphery of the level 2 cluster region and are multiported.
  • the interconnects between the level 2 elements must be located within the level 2 interconnect region 15.
  • Each level 3 cluster 30 includes four (4) level 2 clusters 20 as elements, and also includes a cruciform shaped level 3 interconnect region 17. As with the previously discussed level 1 and level 2 clusters, all interconnections between the level 3 cluster 30 elements (i.e., four level 2 clusters) must be located within the interconnect region 17 of the level 3 cluster 30. Also, as with the previously discussed level 1 and level 2 clusters, the I/ ⁇ contacts of the level 3 cluster 30 are located around the periphery of the region occupied by the level 3 cluster, and such level 3 cluster I/ ⁇ contacts are multiported.
  • a level 4 cluster 40 includes as its elements four (4) level 3 clusters 30, and also includes a cruciform shaped level 4 interconnect region- 19. All interconnections between the level 4 elements (i.e., four (4) level 3 clusters 30) must be located within the interconnect region 19 of the level 4 cluster 40.
  • the I/ ⁇ contacts for the level 4 cluster 40 are located around the periphery of the region occupied by the level 4 cluster 40, and such level 4 cluster I/ ⁇ contacts are multiported.
  • each higher level cluster includes four elements, each element being ' .-a preceding level cluster.
  • the elements of each cluster are arranged around a cruciform shaped interconnect area, and all interconnectins between the four elements of a cluster must be made within the interconnection area.
  • the I/ ⁇ contacts for each level cluster are located about the periphery of the region occupied by such cluster, and the contacts are multiported.
  • the foregoing principles for cluster organization are quite rigid, but provide for a truly hierarchical structure.
  • Each level cluster is forced to have specific characteristics which enables it to be utilized as an element of the next higher level.
  • a level 2 cluster 20 could include sixteen (16) gates (since each level 1 cluster 10 could include four
  • a level 3 cluster 30 would include four (4) primitive cells and, therefore, sixty-four (64) gates.
  • a level 3 cluster 30 could provide functions generally associated with medium-scale integrated (MSI) circuits, including, registers, arithmetic logic units (ALU's), and adders.
  • MSI medium-scale integrated
  • each cluster can . be regarded as a separate component for providing electrical function which are availabe at the I/ ⁇ contacts distributed about its periphery. As higher order logic functions are required, higher level clusters are utilized.
  • each cluster has its I/ ⁇ contacts distributed about the region occupied by such cluster.
  • each cluster has associated, conductor tracks in its interconnect region which are solely for interconnecting the elements of such cluster.
  • the number of tracks in the respective interconnect regions will depend on the number of I/ ⁇ contacts that exit on the interconnect region. By way of example, it has been determined as a "rule of thumb" that the number of tracks in each direction (X and Y) is equal to the number of I/ ⁇ contacts that exit from one element to the interconnect region. Assuming complete multiporting, the number of tracks in a given direction (X or Y) is equal to the number of distinct I/ ⁇ functions for one element.
  • each side of a cluster element has the same number of I/ ⁇ contacts. Therefore, the number of tracks are the same in both X and Y directions for a given interconnect region. To the extent that one side of an element may have more or less I/ ⁇ contacts than an another side, the number of tracks in a given direction and adjacent such side of the element may be reduced or increased, respectively.
  • the number of distinct I/ ⁇ functions for a given cluster element can be determined by design, empirically or by reference to known mathematical models which provide "gate-to-pin" calculations.
  • the number of tracks directly affects the width D of each interconnect region, as does the center-to-center spacing W of the tracks.
  • the area A of the interconnect region is as follows:
  • the width D of an interconnect region is calculated in accordance with Equation 1 by substituting the number of tracks for N in such equation. After the width D is determined, then the area A can be evaluated in accordance with Equation 2.
  • each cluster includes four elements that are interconnected in an interconnect region that is within the four-sided region occupied by the cluster, and further includes I/ ⁇ contacts which are distributed about its periphery. Some or all of the I/ ⁇ contacts are multiported, by which such multiported contacts are available on more than one side of the cluster.
  • each cluster can be considered a component which provides electrical functions as defined by the interconnections of the elements of the cluster. Further, prior to interconnection all clusters of the same level are identical and -therefore allow design flexiblity as to the placement of defined I/ ⁇ functions.
  • the described hierarchical structure is independent of the process technology utilized and requires only the provision of the two metalization layers for the X and Y tracks for the interconnect regions.
  • the areas of such interconnect regions are minimized by having element-to-element interconnections contained within the cluster region and having multiported I/ ⁇ contacts distributed about the periphery of the cluster region.

Abstract

A hierarchical configurable gate array is disclosed and includes a plurality of cluster regions (10, 20, 30, 40) arranged in different levels. The first level cluster (10) includes an integral number N multi-terminal components for providing canonical functions. The second level cluster (20) includes N first level clusters; and higher level clusters (30, 40) each includes N clusters of the next lower level. Interconnect regions (13, 15, 17, 19) are provided within each cluster for interconnections between the N elements of each level. Selected input or output ports for each element of a cluster are available for interconnection at more than one location.

Description

HIERARCHICAL CONFIGURABLE GATE ARRAY BACKGROUND OF THE INVENTION
1. Field of the Invention
The disclosed invention generally relates to configurable gate arrays (CGA's), and is particularly directed to a configurable gate array which utilizes hierarchical cluster levels.
2. Description of Background Art
In the semiconductor industry two principal design approaches are utilized in the design and manufacture of integrated circuits; namely, custom logic and semicustom logic.
Custom integrated circuits typically involve expensive custom design to provide a one-of-a-kind integrated circuit for specific functions- While extremely costly to design, such custom integrated circuits are typically intended for large quantity produc¬ tion.
A semicustom integrated circuit generally utilizes a "standardized" integrated circuit chip which includes a plurality of individual circuit elements arranged*. 'in arrays. The integrated circuit chip is then adapted to provide desired electrical functions by selectively interconnecting the circuit elements. For example, such interconnections may be accomplished by appropriate metalization processing. A "standardized" integrated circuit chip is basically a foundation on which the desired logic functions are achieved by selective interconnections of the circuit elements.. One form of semicustom logic design and manufacture is based on integrated circuit gate arrays produced by different companies. Generally, an integrated circuit gate array includes a plurality of individual logic gates arranged in arrays which typically are not interconnected. The desired logic functions are then achieved by selective interconnection of the inputs and outputs of the gates. As the number of gates in a gate array increases, i.e., as gate density increases, interconnection routing rapidly becomes more complex and difficult. As a result of interconnection difficulties the gate utilization factor, i.e., the percentage of gates actually utilized, decreases.
While several major types of configurable gate arrays have been developed in attempts to improve routability and utilization, such configurable gate arrays currently have substantial disadvantages and limitations.-
For example, in channel routed arrays, wherein channels for interconnections are provided between groups of gates, an upper limit of about 3,500 gates is reached. Moreover, routing distances become excessively long.
In prior art gate arrays wherein gates are uniformly distributed, routing tends to be unstructured and limited by spacing between the gates. It is believed that such a uniformly distributed gate array has an upper limit of about 1,000 gates.
In prior art arrays wherein gates are not uniformly- distributed, routing also tends to be unstructured and limited by the widths of the routing channels. Another type of prior art gate array includes logic gates and dedicated "macros" which are functional circuits (e.g., flip-flops) made from preconnected logic gates. Since the circuit elements for the macros are dedicated to specific functions, such circuit elements elements can be efficiently packed. Such arrays have an upper limit of about 6,000 gates. Increasing the number of gates would require larger macros which would limit the potential applicability of such an array. Thus, the gates/macros approach is believed to be self-limiting. As is readily evident from the foregoing described prior art, interconnection routing and space constraints present significant limitations relative to increasing gate density while maintaining a high level of gate utili¬ zation. SUMMARY OF THE INVENTION
It is therefore an object of the invention to provide an improved configurable gate array.
Another object of the invention is to provide an improved configurable gate array wherein the areas of the interconnect regions are minimized.
Still another object of the invention is to provide a hierarchical configurable gate array which includes increasingly larger gate cluster levels, and wherein the area of interconnect regions for the interconnection between clusters of the same level increase as the level increases.
A further object of the invention is to provide a hierarchical configurable gate array wherein a given gate cluster level forms a component of the next higher gate cluster level.
Another object of the invention is to provide a hierarchical configurable gate array having cluster levels of respectively increasing numbers of gates, and wherein the respective areas of the interconnect regions are determined as a function of the respective levels of interconnection.
Still another object of the invention is to provide a hierarchical configurable gate array having cluster levels wherein each level can assume the identity of a component having inputs and outputs. The foregoing and other objects and features are achieved in a configurable gate array having a first level cluster comprising N multi-terminal circuit components, wherein each component provides a canonical function and N is an integer; a second level cluster comprising N first level clusters; and further level clusters wherein each level cluster includes N clusters of the next lower level. Each of the N circuit components or clusters is an element of its respective level cluster, and interconnect regions are provided for interconnection between the N elements of a level cluster. The respective areas or sizes of such interconnect regions depend on the cluster level formed by the elements to be interconnected within each cluster. Selected input or output ports for each element are available at more than one location for interconnection between the elements of such cluster. BRIEF DESCRIPTION OF THE DRAWING
The foregoing and other advantages and features of the invention will be understood by persons skilled in the art from the following detailed description when read in conjunction with the drawing wherein:
Figure 1 is a top plan schematic view illustrating the first level cluster of the disclosed hierarchical configurable gate array, the elements forming the first level cluster, and the interconnect region for the elements.
Figure 2 is a schematic diagram of a NAND gate which by way of example can be an element of the first cluster level of Figure 1. Figure 3 is a schematic diagram of a NOR gate which by way of example can be an element of the first cluster level of Figure 1.
Figure 4 is a top plan schematic view of the second level cluster of the disclosed hierarchical configurable gate array, the elements forming the second level cluster, and the interconnect region for the elements.
Figure 5 is a top plan schematic view of the fourth level cluster of the disclosed hierarchical configurable gate array and the third level cluster which form the elements of the fourth level cluster. DETAILED DESCRIPTION OF THE INVENTION
In the following description and in the several figures of the drawing, like elements are identified by like reference numerals.
Referring to Figure 1, shown therein is a top plan schematic view of a grouping referred to herein as a level 1 cluster 10. The level 1 cluster includes four (4) elements 11 distributed about a cruciform shaped interconnect region 13. The width across each area of the cruciform is identified as "D." Each of the level 1 cluster elements 11 is a multi-terminal circuit- component which provides a canonical function. Examples of such multi-terminal circuit components include NAND gates and NOR gates. Each of the level 1 cluster elements 11 may be different components. However, for ease of reference, the level 1 cluster elements 11 will be generally discussed as being identical and will also be generally discussed as gates. The X and Y axes adjacent the level 1 cluster 10 identify reference directions which will be utilized in the description of the level 1 cluster 10 as well as all other clusters of different levels. The cruciform shaped interconnect region 13 of the level 1 cluster 10 and the interconnect, regions described below have arms extending in the X and Y directions.
By way of preferred example, the disclosed configurable gate array utilizes complementary metal-oxide semiconductor (CMOS) technology. Figure 2 illustrates a typical NAND gate in CMOS form. Figure 3 illustrates a typical NOR gate in CMOS form. These examples can be fabricated using any semiconductor technology other than CMOS, such as integrated injection logic ( IIL) , emitter coupled logic (ECL) and N-channel MOS (NMOS) . In Figures 2 and 3, the "n" and "p" designations res¬ pectively identify the n-channel and p-channel tran¬ sistors; VDΓJ is the supply voltage; A and B are inputs; the ground symbol identifies the common ground system; and OUT identifies the output. Referring again to Figure 1, each level 1 element 11 is schematically shown by elongated input/output ( I/Θ) contacts which are identified in conformity with Figures 2 and 3. Specifically, VQD identifies the contact for the supply voltage V _,_ j GROUND identifies the ground contact; A and B identify the gate inputs; and OUT identifies the gate output.
Each element 11 is regarded as having- four sides defined by the ends of the elongated I/Θ contacts identifed previously. Such four sides form the periphery of each respective element 11. The elongated I/Θ contacts of the level 1 elements 11 illustrate the principle of "multiporting" as utilized in the invention. Each I/Θ contact on a particular side of a level 1 element 11 is available on the opposite side. Thus, each I/Θ contact of each level 1 element 11 is accessible on the level 1 interconnect region 13.
Similarly, the level 1 cluster 10 also has a periphery formed by the four sides defined by the_ outermost contacts. Since the level 1 cluster is an element of the level 2 cluster (discussed below) , each I/O contact of the level 1 cluster that is to be connected to another cluster is preferably available on two sides, and preferably on opposite sides. The same multiporting principle is applied to higher cluster levels. 6a
Multiporting achieves the accessiblity of each contact or function on two sides of the cluster element region, and also forces connections between clusters of the same level to originate at the periphery of each cluster. While accessiblity of 1/0's on opposite sides of
an element is preferred, it is not necessary that the placement of the I/Θ contacts on one side be a mirror image of the I/Θ contacts on the opposite side. Stated another way, multiporting provides as to each element or cluster a rotation-like capability about the X and Y axes which is utilized without actual rotation.
In conjunction with multiporting, the interconnections between the level 1 elements 11 must be located within the interconnect region 13 of the level 1 cluster. This requirement allows the level 1 cluster, as well as each higher level cluster, to assume the characteristics of a separate circuit component with only I/Θ contacts located about its periphery. As will be evident from further discussion, each cluster is like a "black box" for providing functins which are accessible at the multiported I/Θ contacts located about its periphery.
Multiporting in the level 1 and higher clusters is achieved by appropriate interconnection between elements of each cluster. For various design reasons, multiporting may not always be feasible or practical or beneficial. Accordingly, the requirement of multiporting can be relaxed to some degree by determining in the actual application design process which I/Θ's for each cluster do not require the accessibility provided by multiporting. Any requirement of multiporting referred to herein is subject to this qualification.
Referring now to Figure 4, shown therein is a top plan schematic view of a level 2 cluster 20 which includes as its elements four (4) level 1 clusters 10 distributed about a cruciform shaped level 2 interconnect region 15. As with respect to the level 1 cluster 10, the I/Θ contacts of the level 2 cluster are located about the periphery of the level 2 cluster region and are multiported. Also, the interconnects between the level 2 elements (the four (4) level 1 clusters 10) must be located within the level 2 interconnect region 15.
Referring now to Figure 5, shown therein are four (4) level 3 clusters 30 which form the elements of a level 4 cluster 40. Each level 3 cluster 30 includes four (4) level 2 clusters 20 as elements, and also includes a cruciform shaped level 3 interconnect region 17. As with the previously discussed level 1 and level 2 clusters, all interconnections between the level 3 cluster 30 elements (i.e., four level 2 clusters) must be located within the interconnect region 17 of the level 3 cluster 30. Also, as with the previously discussed level 1 and level 2 clusters, the I/Θ contacts of the level 3 cluster 30 are located around the periphery of the region occupied by the level 3 cluster, and such level 3 cluster I/Θ contacts are multiported.
A level 4 cluster 40 includes as its elements four (4) level 3 clusters 30, and also includes a cruciform shaped level 4 interconnect region- 19. All interconnections between the level 4 elements (i.e., four (4) level 3 clusters 30) must be located within the interconnect region 19 of the level 4 cluster 40. The I/Θ contacts for the level 4 cluster 40 are located around the periphery of the region occupied by the level 4 cluster 40, and such level 4 cluster I/Θ contacts are multiported.
Higher level clusters are provided in accordance with the foregoing principles. Thus, each higher level cluster includes four elements, each element being'.-a preceding level cluster. The elements of each cluster are arranged around a cruciform shaped interconnect area, and all interconnectins between the four elements of a cluster must be made within the interconnection area. The I/Θ contacts for each level cluster are located about the periphery of the region occupied by such cluster, and the contacts are multiported. As can be readily understood, the foregoing principles for cluster organization are quite rigid, but provide for a truly hierarchical structure. Each level cluster is forced to have specific characteristics which enables it to be utilized as an element of the next higher level.
The hierarchical structure is advantageously utilized in the implementation of specific logic designs by partitioning the various cluster levels into predetermined functional groups or libraries. For example, a level 2 cluster 20 could include sixteen (16) gates (since each level 1 cluster 10 could include four
(4) gates) and can be considered a primitive cell. By appropriate interconnections, such a primitive cell can provide functions generally associated with small-scale integrated (SSI) circuits, ■ including flip-flops and latches. From a logic design viewpoint, the primitive cell can be considered the basic resource for a logic designer. A level 3 cluster 30 would include four (4) primitive cells and, therefore, sixty-four (64) gates. A level 3 cluster 30 could provide functions generally associated with medium-scale integrated (MSI) circuits, including, registers, arithmetic logic units (ALU's), and adders.
The discussion of functions associated with SSI and MSI circuits are specific examples illustrating the previously discussed characteristic that each cluster. can. be regarded as a separate component for providing electrical function which are availabe at the I/Θ contacts distributed about its periphery. As higher order logic functions are required, higher level clusters are utilized.
The areas of the interconnect regions 13,15, and so forth, increase with cluster level since the number of 10
gates (i.e., level 1 cluster elements 11) in a cluster increases with the cluster level. More significantly, to the extent that I/Θ contacts increase with increasing cluster level, the areas of the cruciform shaped interconnect regions must increase accordingly.
The areas for interconnection would also depend on the specific interconnection structure. For example, the X-Y orientation of the interconnect regions readily allows for respective parallel conductor tracks in the X and Y directions. Such tracks can be provided by deposition of two (2) insulated metal layers. As discussed above, the interconnections between the elements of each cluster are contained within the interconnection region for such cluster. Also, each cluster has its I/Θ contacts distributed about the region occupied by such cluster. Thus, each cluster has associated, conductor tracks in its interconnect region which are solely for interconnecting the elements of such cluster.
The number of tracks in the respective interconnect regions will depend on the number of I/Θ contacts that exit on the interconnect region. By way of example, it has been determined as a "rule of thumb" that the number of tracks in each direction (X and Y) is equal to the number of I/Θ contacts that exit from one element to the interconnect region. Assuming complete multiporting, the number of tracks in a given direction (X or Y) is equal to the number of distinct I/Θ functions for one element.
To some degree, the foregoing assumes that each side of a cluster element has the same number of I/Θ contacts. Therefore, the number of tracks are the same in both X and Y directions for a given interconnect region. To the extent that one side of an element may have more or less I/Θ contacts than an another side, the number of tracks in a given direction and adjacent such side of the element may be reduced or increased, respectively. 11
The number of distinct I/Θ functions for a given cluster element can be determined by design, empirically or by reference to known mathematical models which provide "gate-to-pin" calculations. The number of tracks directly affects the width D of each interconnect region, as does the center-to-center spacing W of the tracks. Expressed in terms of the number of I/Θ functions N provided by an element,, the width D of the interconnect region is as follows: D = N x W (Equation 1)
In terms of area, for a cluster element having a side length L, the area A of the interconnect region is as follows:
A = D2 + 4DL (Equation 2) While the foregoing discussion of the interconnect region has been in the context of the number of distinct I/Θ functions of a cluster element, the number of tracks utilized can also be determined empirically from an inspection of interconnection requirements. By way of example, the following numbers of tracks for each direction have been found appropriate:
Number of Tracks In Interconnect Region For Each Direction
Level 1 Cluster 3
Level 2 Cluster 6 ' •:.
Level 3 Cluster 10 Level 4 Cluster 25
Level 5 Cluster 32
Level 6 Cluster 50
( Table I ) To the extent that the number of conductor tracks of each cluster is determined other than by the 12
above-described rule of thumb, then the width D of an interconnect region is calculated in accordance with Equation 1 by substituting the number of tracks for N in such equation. After the width D is determined, then the area A can be evaluated in accordance with Equation 2.
The foregoing described cluster system provides a hierarchical configurable circuit array wherein each cluster includes four elements that are interconnected in an interconnect region that is within the four-sided region occupied by the cluster, and further includes I/Θ contacts which are distributed about its periphery. Some or all of the I/Θ contacts are multiported, by which such multiported contacts are available on more than one side of the cluster. Thus, each cluster can be considered a component which provides electrical functions as defined by the interconnections of the elements of the cluster. Further, prior to interconnection all clusters of the same level are identical and -therefore allow design flexiblity as to the placement of defined I/Θ functions. The described hierarchical structure is independent of the process technology utilized and requires only the provision of the two metalization layers for the X and Y tracks for the interconnect regions. The areas of such interconnect regions are minimized by having element-to-element interconnections contained within the cluster region and having multiported I/Θ contacts distributed about the periphery of the cluster region.
While the foregoing description has been directed to specific embodiments of the invention, modifications and changes thereto can be readily made by persons skilled in the art without departing from the scope and spirit of the invention as defined by the following claims.

Claims

13
What is claimed is: 1. An integrated circuit comprising: a cluster region; an interconnect region located within said cluster region; a plurality of circuit elements within said cluster region and separated from each other by said interconnect region, said circuit elements for adaptation to provide respective element functions and further adapted to be interconnected to provide ° selected cluster functions; and contact means distributed about the periphery of said cluster region for providing access to the predetermined cluster functions.
2. The integrated circuit of Claim 1 wherein said plurality of circuit elements comprises four circuit elements.
3. The integrated circuit of Claim 1 wherein said interconnect region comprises a cruciform shaped area.
4. The integrated circuit of Claim 1 wherein said contact means provides multiporting of at least some of said predetermined cluster functions whereby such multiported functions are available at more than one location .on the periphery of said cluster region.
5. The integrated circuit of Claim 4 wherein said cluster region is a four-sided area, and wherein said multiported cluster functions are available on opposite sides of said cluster region. --■" .
6. An integrated circuit comprising: a plurality of cluster regions, each cluster region having a plurality of elements adapted to be interconnected to provide cluster functions for such cluster; an interconnect region for each cluster region located within such cluster region, said 14
interconnect region separating the elements of such cluster and being adapted to accomodate all interconnections between the elements of such cluster; and input/output means for each cluster region located about the periphery of such cluster region, said input/output means providing access to the cluster functions for such cluster region such that at least some of the cluster functions are available at more than one location and thus are multiported.
7. The integrated circuit of Claim 6 wherein said plurality of clusters are organized in different levels so that a plurality of lower level clusters' comprise the elements of the next higher level cluster.
8. The integrated circuit of Claim 6 wherein each cluster region is a four-sided area, and wherein said input/output means provides access to multiported cluster functions on two sides of said cluster region.
9. The integrated circuit of Claim 8' wherein each cluster includes four elements, and wherein said interconnect region is a cruciform shaped area.
10. The integrated circuit of Claim 8 wherein said input/output means provides access to multiported cluster function on opposite sides of said cluster region.
11. The integrated circuit of Claim 10 wherein each cluster includes four elements, and wherein said interconnect region is a cruciform shaped area.
12. An integrated circuit comprising: V ■:. . first level circuit means occupying a first level region for adaptation to provide first level selected electrical functions, said first level circuit means including four elements for selective interconnection and an interconnect region; 15
first level input/output means located about said first level region for providing access to said selected functions; respective higher level circuit means occupying respective higher level regions for adaptation to provide respective higher level selected electrical functions, each said higher level circuit means respectively including four elements for selective interconnection and an interconnect region, wherein each said element comprises the next lower level circuit means; and respective higher level input/output means located about respective higher level regions for providing access to said respective higher level selected electrical functions.
13. The integrated circuit of Claim 12 wherein said first level input/output means provides access at more- than one location to at least some of said first level selected electrical function which are thereby multiported; and wherein said respective higher level input/output means provides access at more than one location to at least some of said respective higher level selected electrical functions which are thereby multiported.
14.- The integrated circuit of Claim 13 wherein said first level region and said respective higher level regions are four-sided areas, and wherein each said of said interconnect regions is a cruciform shaped area.
15. The integrated circuit of Claim 1 wherein fsaid- interconnect region has a configuration which enables the cluster functions to be unaffected by the specific tech¬ nology used in fabricating said circuit elements.
PCT/US1985/001019 1984-06-29 1985-05-31 Hierarchical configurable gate array WO1986000468A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62608684A 1984-06-29 1984-06-29
US626,086 1984-06-29

Publications (1)

Publication Number Publication Date
WO1986000468A1 true WO1986000468A1 (en) 1986-01-16

Family

ID=24508888

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1985/001019 WO1986000468A1 (en) 1984-06-29 1985-05-31 Hierarchical configurable gate array

Country Status (3)

Country Link
EP (1) EP0188449A1 (en)
JP (1) JPS61502574A (en)
WO (1) WO1986000468A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192061A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit device
JPS59145678A (en) * 1982-10-12 1984-08-21 ユ−レ・エ・セ・フイス Derailer for bicycle

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935448A (en) * 1982-08-23 1984-02-27 Nec Corp Master-slice integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192061A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit device
JPS59145678A (en) * 1982-10-12 1984-08-21 ユ−レ・エ・セ・フイス Derailer for bicycle

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Volume 20, Nr. 8, January 1978 (New York, US) B.C. FOX et al.: "Large-Scale Integration Modeling Technique", see pages 3129-3130 page 3129 *
IEEE Journal of Solid State Circuits, Volume SC-16, Nr. 5, October 1981, (New York US) F. BORGINI et al.: "CMOS/SOS Automated Universal Array", pages 563-570, see figure 1; page 564, left-hand column *
PATENTS ABSTRACTS OF JAPAN, Volume 7, Nr. 40 (E-159) (1185), 17 February 1983, (Tokyo, JP) & JP, A, 57192061 (Hitachi Seisakusho K.K.) see the whole document *
PATENTS ABSTRACTS OF JAPAN, Volume 8, Nr. 123 (E-249) (1560), 8 June 1984, (Tokyo, JP) & JP, A, 59145678 (Nippon Denki K.K.) see the whole document *

Also Published As

Publication number Publication date
EP0188449A1 (en) 1986-07-30
JPS61502574A (en) 1986-11-06

Similar Documents

Publication Publication Date Title
US4688072A (en) Hierarchical configurable gate array
US5491353A (en) Configurable cellular array
US5889329A (en) Tri-directional interconnect architecture for SRAM
US5742086A (en) Hexagonal DRAM array
US6300793B1 (en) Scalable multiple level tab oriented interconnect architecture
EP0133466B1 (en) Simultaneous placement and wiring for vlsi chips
US5777360A (en) Hexagonal field programmable gate array architecture
US5973376A (en) Architecture having diamond shaped or parallelogram shaped cells
JP2761310B2 (en) User configurable circuit array architecture
US5822214A (en) CAD for hexagonal architecture
US5650653A (en) Microelectronic integrated circuit including triangular CMOS "nand" gate device
US6417690B1 (en) Floor plan for scalable multiple level tab oriented interconnect architecture
US5818728A (en) Mapping of gate arrays
US5789770A (en) Hexagonal architecture with triangular shaped cells
KR890004568B1 (en) Master slice type for semiconductor
US5905655A (en) Separable cells having wiring channels for routing signals between surrounding cells
US5869900A (en) Sea-of-cells array of transistors
US6097073A (en) Triangular semiconductor or gate
US5768146A (en) Method of cell contouring to increase device density
US4999698A (en) Interconnection arrangement for a gate array
EP0202535B1 (en) Layout process for cascode voltage switch logic
US5864165A (en) Triangular semiconductor NAND gate
US5801422A (en) Hexagonal SRAM architecture
Bermak et al. High-density 16/8/4-bit configurable multiplier
US5834821A (en) Triangular semiconductor "AND" gate device

Legal Events

Date Code Title Description
AK Designated states

Designated state(s): JP

AL Designated countries for regional patents

Designated state(s): AT BE CH DE FR GB IT LU NL SE