USB548302I5 - - Google Patents

Info

Publication number
USB548302I5
USB548302I5 US54830275A USB548302I5 US B548302 I5 USB548302 I5 US B548302I5 US 54830275 A US54830275 A US 54830275A US B548302 I5 USB548302 I5 US B548302I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05/548,302 priority Critical patent/US3983414A/en
Publication of USB548302I5 publication Critical patent/USB548302I5/en
Application granted granted Critical
Publication of US3983414A publication Critical patent/US3983414A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
US05/548,302 1975-02-10 1975-02-10 Charge cancelling structure and method for integrated circuits Expired - Lifetime US3983414A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/548,302 US3983414A (en) 1975-02-10 1975-02-10 Charge cancelling structure and method for integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/548,302 US3983414A (en) 1975-02-10 1975-02-10 Charge cancelling structure and method for integrated circuits

Publications (2)

Publication Number Publication Date
USB548302I5 true USB548302I5 (es) 1976-02-17
US3983414A US3983414A (en) 1976-09-28

Family

ID=24188241

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/548,302 Expired - Lifetime US3983414A (en) 1975-02-10 1975-02-10 Charge cancelling structure and method for integrated circuits

Country Status (1)

Country Link
US (1) US3983414A (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1075851B (it) * 1975-11-17 1985-04-22 Ibm Circuito perfezionato a trasferimento di carica
US4075509A (en) * 1976-10-12 1978-02-21 National Semiconductor Corporation Cmos comparator circuit and method of manufacture
US4082966A (en) * 1976-12-27 1978-04-04 Texas Instruments Incorporated Mos detector or sensing circuit
US4198580A (en) * 1978-05-30 1980-04-15 National Semiconductor Corporation MOSFET switching device with charge cancellation
NL8003874A (nl) * 1980-07-04 1982-02-01 Philips Nv Veldeffektcapaciteit.
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5875922A (ja) * 1981-10-30 1983-05-07 Toshiba Corp 半導体スイツチ回路
GB2170954B (en) * 1985-02-13 1988-09-07 Rca Corp Transmission gates with compensation
US5084634A (en) * 1990-10-24 1992-01-28 Burr-Brown Corporation Dynamic input sampling switch for CDACS
JPH04287418A (ja) * 1991-03-18 1992-10-13 Fujitsu Ltd 半導体集積回路
US5386151A (en) * 1993-08-11 1995-01-31 Advanced Micro Devices, Inc. Low voltage charge pumps using p-well driven MOS capacitors
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7498862B2 (en) * 2005-05-31 2009-03-03 Texas Instruments Incorporated Switch for handling terminal voltages exceeding control voltage
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
JP5765274B2 (ja) * 2012-03-12 2015-08-19 株式会社デンソー アナログスイッチ
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636378A (en) * 1968-08-09 1972-01-18 Hitachi Ltd Series-shunt-type semiconductor switching circuit
US3662356A (en) * 1970-08-28 1972-05-09 Gen Electric Integrated circuit bistable memory cell using charge-pumped devices
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
US3753132A (en) * 1972-03-02 1973-08-14 Us Navy Sample-and-hold circuit
US3808458A (en) * 1972-11-30 1974-04-30 Gen Electric Dynamic shift register
US3859545A (en) * 1973-12-10 1975-01-07 Bell Telephone Labor Inc Low power dynamic control circuitry

Also Published As

Publication number Publication date
US3983414A (en) 1976-09-28

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