USB433088I5 - - Google Patents
Info
- Publication number
- USB433088I5 USB433088I5 US433088DD USB433088I5 US B433088 I5 USB433088 I5 US B433088I5 US 433088D D US433088D D US 433088DD US B433088 I5 USB433088 I5 US B433088I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/039—Displace P-N junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US433088A US3270293A (en) | 1965-02-16 | 1965-02-16 | Two terminal semiconductor high frequency oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
USB433088I5 true USB433088I5 (de) |
Family
ID=23718804
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US433088D Pending USB433088I5 (de) | 1965-02-16 | ||
US433088A Expired - Lifetime US3270293A (en) | 1965-02-16 | 1965-02-16 | Two terminal semiconductor high frequency oscillator |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US433088A Expired - Lifetime US3270293A (en) | 1965-02-16 | 1965-02-16 | Two terminal semiconductor high frequency oscillator |
Country Status (4)
Country | Link |
---|---|
US (2) | US3270293A (de) |
JP (1) | JPS4838993B1 (de) |
GB (1) | GB1142585A (de) |
NL (1) | NL145414B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3469208A (en) * | 1965-02-27 | 1969-09-23 | Hitachi Ltd | Microwave solid-state oscillator device and a method for varying the oscillation frequency thereof |
US3366805A (en) * | 1965-05-03 | 1968-01-30 | Marshall D. Bear | Semiconductor diode microwave pulse generator |
DE1516754B1 (de) * | 1965-05-27 | 1972-06-08 | Fujitsu Ltd | Halbleitervorrichtung |
DE1514655A1 (de) * | 1965-12-30 | 1969-08-28 | Siemens Ag | Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall |
US3493821A (en) * | 1967-01-27 | 1970-02-03 | Fairchild Camera Instr Co | Microwave negative resistance avalanche diode |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
JPS4822374B1 (de) * | 1968-10-17 | 1973-07-05 | ||
US3593196A (en) * | 1969-02-19 | 1971-07-13 | Omni Spectra Inc | Type of avalanche diode |
US3684901A (en) * | 1970-05-15 | 1972-08-15 | Sperry Rand Corp | High frequency diode energy transducer and method of manufacture |
US3612914A (en) * | 1970-08-25 | 1971-10-12 | Bell Telephone Labor Inc | Avalanche diode circuits |
US3890630A (en) * | 1973-10-09 | 1975-06-17 | Rca Corp | Impatt diode |
US3926693A (en) * | 1974-04-29 | 1975-12-16 | Rca Corp | Method of making a double diffused trapatt diode |
US3976873A (en) * | 1975-05-08 | 1976-08-24 | The United States Of America As Represented By The Secretary Of The Navy | Tunable electroabsorptive detector |
JPS544028U (de) * | 1977-06-10 | 1979-01-11 | ||
DE19713962C1 (de) * | 1997-04-04 | 1998-07-02 | Siemens Ag | Leistungsdiode (FCI-Diode) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2899652A (en) * | 1959-08-11 | Distance | ||
US2908871A (en) * | 1954-10-26 | 1959-10-13 | Bell Telephone Labor Inc | Negative resistance semiconductive apparatus |
-
0
- US US433088D patent/USB433088I5/en active Pending
-
1965
- 1965-02-16 US US433088A patent/US3270293A/en not_active Expired - Lifetime
-
1966
- 1966-02-10 GB GB5862/66A patent/GB1142585A/en not_active Expired
- 1966-02-15 NL NL666601916A patent/NL145414B/xx not_active IP Right Cessation
- 1966-02-15 JP JP41008645A patent/JPS4838993B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL145414B (nl) | 1975-03-17 |
GB1142585A (en) | 1969-02-12 |
NL6601916A (de) | 1966-08-17 |
DE1516061B2 (de) | 1973-05-10 |
DE1516061A1 (de) | 1969-07-31 |
JPS4838993B1 (de) | 1973-11-21 |
US3270293A (en) | 1966-08-30 |