US9721747B2 - Grid, method of manufacturing the same, and ion beam processing apparatus - Google Patents
Grid, method of manufacturing the same, and ion beam processing apparatus Download PDFInfo
- Publication number
- US9721747B2 US9721747B2 US15/366,660 US201615366660A US9721747B2 US 9721747 B2 US9721747 B2 US 9721747B2 US 201615366660 A US201615366660 A US 201615366660A US 9721747 B2 US9721747 B2 US 9721747B2
- Authority
- US
- United States
- Prior art keywords
- carbon
- grid
- carbon fibers
- holes
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/303—Electron or ion optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Definitions
- An object of the present invention is to provide a grid, which is easy to process and is less likely to cause formation of jutting portions of carbon fibers on wall surfaces of holes at the time of processing the holes.
Abstract
A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.
Description
This application is a continuation application of International Application No. PCT/JP2015/005851, filed Nov. 25, 2015, which claims the benefit of Japanese Patent Application No. 2015-052363 filed Mar. 16, 2015. The contents of the aforementioned applications are incorporated herein by reference in their entireties.
Field of the Invention
The present invention relates to a grid plate, a method of manufacturing the same, and an ion beam processing apparatus.
Description of the Related Art
Ion beam processing such as etching and ion implantation has widely been practiced in manufacturing processes of electronic components and the like. An ion beam processing apparatus used in this processing is often equipped with a thin plate (hereinafter referred to as a grid) including multiple holes used for extracting ions from plasma. This ion beam processing apparatus performs processing by irradiating a processing object with ions, which are originated from the plasma and transformed into beams as a consequence of passage through the holes in the grid.
Japanese Patent Application Laid-Open No. Hei 4-180621 describes a particle beam etching apparatus that includes grids. The particle beam etching apparatus uses the grids in a mesh form, each of which is formed either from layered films of carbon and silicon or from carbon fibers.
U.S. Pat. No. 5,548,953 describes a grid that uses a carbon-carbon composite as its material. The carbon-carbon composite in U.S. Pat. No. 5,548,953 has a structure in which some filaments of carbon fibers are bundled into strands that are then arranged in a woven fabric form and embedded into a carbon matrix (a base material) provided with multiple holes. As arrangement examples of the carbon fibers in the woven fabric form, U.S. Pat. No. 5,548,953 discloses the following examples in which: the carbon fibers are arranged parallel to three axes offset by 60° from one another (FIG. 7 of U.S. Pat. No. 5,548,953); the carbon fibers are snaked so as to skirt the holes (FIG. 8 of U.S. Pat. No. 5,548,953); and the carbon fibers are arranged in a lattice fashion (FIG. 9 of U.S. Pat. No. 5,548,953).
The grid described in Japanese Patent Application Laid-Open No. Hei 4-180621 is formed from layered films of carbon and silicon or from carbon fibers, and does not include a base material. For this reason, the grid is low in rigidity and has a risk of insufficient strength when the grid is increased in size to accommodate an increase in diameter of an ion beam source.
The grid described in U.S. Pat. No. 5,548,953 employs the carbon-carbon composite as its material. Accordingly, the grid has high rigidity and has no risk of insufficient strength when the grid is increased in size to accommodate an increase in diameter of an ion beam source. However, the holes are formed in the grid described in U.S. Pat. No. 5,548,953 in such a way as to skirt the carbon fibers in the woven fabric form which are arranged in the carbon matrix. For this reason, it is difficult to position the holes appropriately during the processing thereof and to manufacture the grid stably.
On the other hand, if no holes are formed in such a way as to skirt the carbon fibers in the woven fabric form which are arranged in the carbon matrix unlike U.S. Pat. No. 5,548,953, then it is necessary to form such holes in the carbon-carbon composite. The inventors of this application have found out that there is a risk of causing problems as shown below in this case.
Note that carbon fibers that are knitted regularly in longitudinal and lateral directions into a woven fabric form will be referred to as a “crossed member” in this specification. The carbon-carbon composite using the crossed member is manufactured by impregnating the crossed member with a carbon-containing raw material for the matrix such as a thermosetting resin, and then heating and carbonizing the crossed member. As a consequence, the carbon-carbon composite using the crossed member includes the carbon fibers which expand in two directions perpendicular to each other, namely, in the longitudinal direction and the lateral direction.
When drilling work is performed by using a drill in the case of FIG. 4 , a drill bit acts in a circumferential direction of the hole 202 (a direction indicated with an arrow A or an arrow A′ in FIG. 4 ). In other words, the acting direction of the drill bit is perpendicular to a fiber direction of the carbon fiber 401. The strength of the carbon fiber 401 in the direction perpendicular to the fiber direction is smaller than the strengths in other directions. Accordingly, the carbon fiber 401 is cut off relatively easily in this case.
In the case of FIG. 5 , the drill bit acts in the circumferential direction of the hole 202 (a direction indicated with an arrow B in FIG. 5 ). In other words, the acting direction of the drill bit is parallel to the fiber direction of the carbon fiber 401. The strength of the carbon fiber 401 in the direction parallel to the fiber direction is larger than the strengths in other directions. Accordingly, the carbon fiber 401 is not easily cut off in this case. The carbon fibers 401 are knitted laterally and longitudinally in the carbon-carbon composite using the crossed member. When the carbon-carbon composite using the crossed member is circularly pierced with the drill bit in rotary motion, the acting direction of the drill bit coincides with any of the directions parallel to the fibers in the longitudinal direction and the lateral direction at every 90°. Accordingly, the positional relation as shown in FIG. 5 may hold frequently in the course of processing the carbon-carbon composite using the crossed member.
Here, another possible solution is to align the fiber direction of the carbon fibers 401 with a thickness direction of the carbon-carbon composite as shown in FIG. 7 . In this case, the drill bit acts in the direction perpendicular to the fiber direction at the time of piercing, so that the carbon fibers 401 can be cut off relatively easily. Accordingly, the jutting of the carbon fibers from the wall surfaces of the holes 202 is less likely to occur in this case. Nevertheless, the effect of rigidity enhancement by use of the carbon-carbon composite will be reduced since the carbon fibers are not oriented in a horizontal direction. It is therefore undesirable to align the fiber direction of the carbon fibers with the thickness direction.
As a consequence, while the grid is being manufactured by use of the rigid carbon-carbon composite as its material, the jutting portions 601 of the carbon fibers may be formed on the wall surfaces of the holes as shown in FIG. 6 at the time of processing the holes.
The present invention has been made in view of the aforementioned technical problems. An object of the present invention is to provide a grid, which is easy to process and is less likely to cause formation of jutting portions of carbon fibers on wall surfaces of holes at the time of processing the holes.
An aspect of the present invention provides a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.
According to the present invention, it is possible to provide a grid which is easy to process and is less likely to cause formation of jutting portions of carbon fibers on wall surfaces of holes at the time of processing the holes.
An embodiment of the present invention will be described below with reference to the drawings. It is to be noted, however, that the present invention is not limited only to this embodiment. In the drawings to be described below, constituents having the same functions will be denoted by the same reference numerals and repeated explanations thereof will be omitted as appropriate.
As an example of an ion beam processing apparatus, FIG. 1 shows a structural drawing of an ion beam etching apparatus which uses a grid according to an embodiment of the present invention. An ion beam etching apparatus 100 includes a plasma generation chamber 102 for generating plasma, and a processing chamber 101 in which etching processing takes place. As a plasma generating unit for generating the plasma, a bell jar (a discharge vessel) 104, a gas introduction unit 105, an antenna 106, and a Faraday shield 118 are installed in the plasma generation chamber 102. The bell jar 104 is part of a chamber external wall, which defines a discharge space of the plasma generation chamber 102 and keeps the inside vacuum. The gas introduction unit 105 is a portion, into which a processing gas such as argon (Ar) necessary for generation of the plasma is to be introduced. The gas introduction unit 105 is connected to a not-illustrated gas cylinder and the like. The antenna 106 is an electric power applying unit formed from conductive wiring and the like, which is used for generating the plasma inside the bell jar 104. The Faraday shield 118 is a lattice-shaped electrode made of a metal and installed on an inner wall surface of the bell jar 104. The Faraday shield 118 has a function to homogenize a high frequency electric field which is radiated from the antenna.
A discharge power supply 112 which supplies high frequency power (source power) to the antenna 106, a matching unit 107 provided between the discharge power supply 112 and the antenna 106, and an electromagnetic coil 108 which generates a magnetic field inside the bell jar 104 are provided outside the bell jar 104. A processing gas introduced from the gas introduction unit 105 is ionized by supplying the high frequency power from the discharge power supply 112 to the antenna 106 through the matching unit 107, and the plasma is thus formed inside the plasma generation chamber 102.
The processing chamber 101 includes a neutralizer 113 which neutralizes ion beams, a substrate holder 110 which is a holding unit for holding a substrate 111 being a processing object, and an evacuating pump 103 which evacuates the inside of the plasma generation chamber 102 and the processing chamber 101 and keeps the inside vacuum. The substrate holder 110 includes various substrate fixtures such as a clamp chuck. Meanwhile, the substrate holder 110 may also be provided with a drive mechanism such as a rotation-revolution mechanism for projecting the incident ion beam onto the substrate at a given position or a given angle.
A grid assembly 109 provided with holes to extract ions is installed at a boundary that separates the plasma generation chamber 102 from the processing chamber 101. The grid assembly 109 includes one or more grids 200. The plasma generated in the plasma generation chamber 102 is passed through the holes in each grid 200 and extracted to the processing chamber 101, and is then projected onto the substrate 111. A voltage is applied from a not-illustrated voltage supply to each grid 200 for the purpose of ion acceleration and the like.
An operation of ion beam projection by using the ion beam etching apparatus 100 will be described. First, the processing gas containing an inert gas such as argon (Ar) is introduced from the gas introduction unit 105 into the plasma generation chamber 102. Next, the processing gas inside the plasma generation chamber 102 is ionized by applying the high frequency power from the discharge power supply 112 to the antenna 106, and the plasma including the ions is thus generated. The ions included in the plasma generated in the plasma generation chamber 102 are accelerated by the voltage applied to each grid 200 when the ions are passed through the holes provided in the grid assembly 109. In this way, ion beams are extracted from the plasma generation chamber 102 to the processing chamber 101. After the extraction into the processing chamber 101, the ion beams are neutralized by the neutralizer 113. The neutralized beams are projected onto the substrate 111, and the etching processing takes place on a surface of the substrate.
When the grid assembly 109 has a structure in which the multiple grids 200 are stacked on one another as shown in FIG. 1 , the grids 200 are preferably arranged such that the positions of the holes overlap one another when viewed in a direction perpendicular to a plane of the grid assembly 109. By arranging the holes as described above, it is possible to extract the ion beams perpendicularly to and evenly from the grid assembly 109.
Note that in this embodiment, the ion beam etching apparatus is depicted as an example of the apparatus that applies the present invention. However, the present invention is also applicable to other apparatuses. The present invention is also applicable broadly to ion beam processing apparatuses such as an ion implantation apparatus and an ion beam sputtering apparatus, which are configured to generate accelerated particles by extracting ions from plasma. Meanwhile, besides the ion beam processing apparatuses, the present invention may be employed in an application which uses a plate member that includes multiple holes and requires strength.
As described above, the grid assembly 109 is installed inside the ion beam processing apparatus and the like. Along with an increase in size of semiconductor substrates in these years, the ion beam processing apparatuses are growing in size and the grid assembly 109 is also required to be increased in size. The grid assembly 109 may be installed horizontally or obliquely inside the ion beam processing apparatus. In this case, the grids 200 constituting the grid assembly 109 may be warped by their own weights, and gaps between the holes 202 in the respective grids 200 may vary. If the gaps between the holes 202 in the respective grids 200 vary, then it is difficult to extract the ion beams perpendicularly and evenly. This embodiment uses the carbon-carbon composite which is high in strength and light in weight, and is therefore less likely to cause such a problem. Moreover, the carbon-carbon composite has a low linear thermal expansion coefficient, and is therefore less likely to cause displacements of the holes 202 attributed to thermal expansion. Furthermore, since the carbon-carbon composite mainly uses carbon as its raw material, contamination is unlikely to be problematic in the course of manufacturing electronic components and the like by using the ion beam processing apparatus. From the viewpoints mentioned above, it is preferable to employ the carbon-carbon composite as the material of the grid plates 201.
In step S302, the multiple holes 202 are formed in the grid plate 201. Performances of the ion beam etching apparatus 100 including an etching rate, straightness of the beam, and the like vary depending on the arrangement of the holes 202, hole sizes, and the like. Accordingly, in the course of processing the grid 200 for the ion beam processing apparatus, the numerous holes 202 are required to be formed stably at a predetermined pitch and with predetermined dimensions. In view of these requirements, in order to form the holes stably and at low cost, it is preferable to form the holes by using a device provided with a processing tool such as a drill and an end mill, which performs cutting by rotary motion. The following description will be given on the assumption that the holes 202 are to be formed by using the drill.
Next, the carbon-carbon composite to be employed as the material of the grid plate 201 will be described. The carbon-carbon composite is a composite material in which carbon fibers that are reinforcing members are arranged inside a carbon matrix (a base material) which is a supporting member. Mechanical strength such as rigidity can be improved by combining the multiple materials. Particularly, the strength in the fiber direction of each carbon fiber is further improved.
As described above, examples of the carbon fibers used for manufacturing the carbon-carbon composite include the crossed member and the chopped member. The crossed member is prepared by knitting bundles of carbon fibers regularly in the longitudinal and lateral directions into a woven fabric form. The carbon-carbon composite using the crossed member is manufactured by impregnating the crossed member with the carbon-containing raw material for the matrix such as a thermosetting resin, and then heating and carbonizing the crossed member. As a consequence, the carbon-carbon composite using the crossed member contains the carbon fibers that expand in two directions perpendicular to each other, namely, in the longitudinal direction and the lateral direction.
On the other hand, the chopped member (also referred to as chopped carbon fibers) is a material containing short fibers prepared by chopping carbon fibers in filaments into predetermined lengths (cutting the carbon fibers into small pieces). The carbon-carbon composite using the chopped member is manufactured by impregnating the chopped member processed into a mat-like shape with a resin, and then subjecting the chopped member to a thermal treatment. At this time, the fibers of the chopped member are not aligned in a certain direction, but are oriented in random directions in terms of a two-dimensional direction (a planar direction) or random directions in terms of a three-dimensional direction. As a consequence, the carbon-carbon composite using the chopped member contains the carbon fibers in the random directions in terms of the planar direction or the three-dimensional direction. Here, the expression “random directions” means a state in which the carbon fibers are in a disorganized state as a whole without having a certain order such as a periodic structure and symmetry. For example, a state in which there is a region where the carbon fibers are partially aligned in parallel but there is not the certain order of the directions of the carbon fibers as a whole, is also assumed to be included in the state of containing the carbon fibers in the “random directions”.
In this embodiment, the carbon-carbon composite using the chopped member is employed as the material of the grid 200 instead of that using the afore-mentioned crossed member. Reasons why the use of the chopped member is preferable will be described below while comparing this case with the case of using the crossed member.
As described previously, when the carbon-carbon composite using the crossed member is employed as the material of each grid 200 for the ion beam etching apparatus 100, the carbon fibers may jut out from the holes after the processing. If this grid 200 is applied to the ion beam etching apparatus 100, abnormal discharge originating from jutting portions 601 and 602 of the carbon fibers may occur at the time of operating the ion beam etching apparatus 100. A possible option to solve this problem is to remove the carbon fibers jutting out from the holes after the processing of the grid 200. For example, reprocessing by use of the drill, removal by aging processing, or the like is presumable. However, such removal processing is costly. Accordingly, it is difficult to employ the carbon-carbon composite using the crossed member as the material of each grid 200 for the ion beam etching apparatus 100.
On the other hand, in the carbon-carbon composite using the chopped member, the directions of the carbon fibers 401 are random and not aligned in a certain direction as shown in FIG. 8B . For this reason, there is not any certain portion on the circumference of the hole 202 which is not easily cut off. Accordingly, by employing the carbon-carbon composite using the chopped member, the carbon fibers are inhibited from jutting out from the wall surfaces of the holes unlike the case of processing the carbon-carbon composite using the crossed member as mentioned above.
Next, a second problem in the case where the grid provided with the holes by using the crossed member of FIG. 8A is employed in the ion beam processing apparatus will be described by using FIG. 9 , FIG. 10A , and FIG. 10B . FIG. 9 is an enlarged diagram showing fiber directions of the crossed member. FIG. 10A is a conceptual diagram showing the case of forming the holes in the grid while using the crossed member. FIG. 10B is a conceptual diagram showing the case of forming the holes in the grid while using the chopped member.
In the carbon-carbon composite using the crossed member as shown in FIG. 8A , the directions of the carbon fibers 401 are aligned in the vertical direction and the horizontal direction in FIG. 8A . As shown in FIG. 9 , the crossed member has a structure in which bundles 401 a of the carbon fibers in the vertical direction each at a prescribed width W and bundles 401 b of the carbon fibers in the horizontal direction each at the prescribed width W are woven together. Accordingly, when a left hole 202 b and a right hole 202 c are formed in the grid plate 201 and at a width smaller than the width W, a portion where the bundle 401 a of the carbon fibers in the vertical direction and the bundle 401 b of the carbon fibers in the horizontal direction are woven together may not be present between the left hole 202 b and the right hole 202 c as shown in FIG. 9 . At such a position, part of the carbon fibers 401 may come off in a lump, thereby creating a level difference 402. In this case, as shown in FIG. 10A , the level difference 402 may occur on part of a surface at a portion of the grid plate 201 between the left hole 202 b and the right hole 202 c, which may cause the second problem of changes in shape of the holes 202 attributed to the level difference 402.
The second problem will be described. At an outer peripheral portion other than a right side from the center of the left hole 202 b and a left side from the center of the right hole 202 c in FIG. 10A , the bundles 401 b of the carbon fibers in the horizontal direction on a first layer remain on the surface and no level difference occurs therein. On the other hand, the bundle 401 b of the carbon fibers in the horizontal direction on the first layer located near the space between the right side from the center of the left hole 202 b and the left side from the center of the right hole 202 c in FIG. 10A is cut into bundles 401 c and 401 d of the carbon fibers due to formation of the holes. The bundle 401 d of the carbon fibers in the horizontal direction on the first layer, which is isolated by being cut off by the left hole 202 b and the right hole 202 c, comes off in a lump. Hence, the bundle 401 a of the carbon fibers in the vertical direction on a second layer emerges on the surface. In this way, the level difference 402 comes into being between a right portion of the circumference of the left hole 202 b and a left portion of the circumference of the right hole 202 c. The level difference 402 chips off portions near the right side from the center of the left hole 202 b and the left side from the center of the right hole 202 c, and shapes of the holes are changed, thereby causing the above-mentioned second problem.
In the ion beam processing apparatus, if the shapes of the holes 202 in the grids are changed, the shapes of the ion beams are distorted. The distortion in shape of the ion beams adversely affects scatter angles of the ion beams, thereby causing a problem of deterioration in processing accuracy (such as a shape of an etched section in the case of the ion beam etching apparatus, and film thickness distribution of a deposited substance to be deposited on the substrate in the case of an ion beam film deposition apparatus).
On the other hand, as shown in FIG. 8B , in the carbon-carbon composite using the chopped member, the directions of the carbon fibers 401 are random and are not aligned in a certain direction. Accordingly, as shown in FIG. 10B , it is less likely that part of the carbon fibers 401 comes off in a lump at the time of processing the holes 202. As a consequence, the problem of changes in shape of the holes 202, which is attributed to the partial chipping off of the circumferences of the holes 202, is less likely to occur.
Next, a third problem in the case where the grid provided with the holes by using the crossed member in FIG. 8A is employed in the ion beam processing apparatus will be described.
When the ion beam processing is performed by using the ion beam processing apparatus, the processing object scatters from the substrate and adheres to the grid. In the case of the grid using the crossed member in FIG. 8A , the grid may cause a third problem that the processing object having adhered to the grid comes off the grid and adheres to the substrate. On the other hand, when the grid using the chopped member in FIG. 8B is employed in the ion beam processing apparatus, it is possible to solve the third problem that the processing object having adhered to the grid comes off the grid and adheres to the substrate.
A reason why the processing object having adhered to the grid does not come off the grid when the grid using the chopped member in FIG. 8B is employed in the ion beam processing apparatus, will be described on the basis of a technical consideration.
In the case of the grid using the crossed member in FIG. 8A , the directions of the carbon fibers 401 are aligned in the vertical direction and the horizontal direction in FIG. 8A . Accordingly, an indented pattern to be formed on the surface of the grid has regularity and the surface is flat at the same time. The surface therefore has a small force to retain the adhering object. For this reason, when the grid using the crossed member in FIG. 8A is employed in the ion beam processing apparatus, the processing object having adhered to the grid may come off the grid and adhere to the substrate. Hence, this grid cannot solve the third problem.
On the other hand, in the case of the chopped member in FIG. 8B , an indented pattern to be formed on the surface of the grid has an irregular shape, and terminal ends of the carbon fibers are partially exposed. The surface therefore has a large force to retain the adhering object. For this reason, when the grid using the chopped member in FIG. 8B is employed in the ion beam processing apparatus, the processing object having adhered to the grid is retained by the carbon fibers. Hence, this grid can solve the third problem.
On the other hand, FIG. 11C is the micrograph of the holes in the carbon-carbon composite using the chopped member. FIG. 11D is an enlarged view of one of the holes shown in FIG. 11C . The absence of fibrous jutting portions like those observed in FIG. 11B can be confirmed particularly with reference to FIG. 11D . Thus, it is confirmed that the jutting of the carbon fibers out from the wall surfaces of the holes can be suppressed by employing the carbon-carbon composite using the chopped member as the material of the grid plate.
On the other hand, FIG. 12B is the micrograph of the portion near the holes in the grid employing the carbon-carbon composite using the chopped member. With reference to FIG. 12B , it was confirmed that the above-described second problem was absent, and that the hole shapes of the hole on the left side and the hole on the right side were not changed (no portion that looks white comes into being in the case of the micrograph in FIG. 12B ).
According to the embodiment and the prototype examples described above, the grid for ion beam etching apparatus employing the rigid carbon-carbon composite can be produced by adopting the chopped member as the material of the carbon fibers. Since the carbon fibers are randomly arranged, it is not necessary to conduct positioning of the locations to form the holes with respect to the positions of the carbon fibers. Moreover, since the carbon fibers are inhibited from jutting out in the holes, abnormal discharge that would originate from the jutting portions is suppressed at the time of operating the ion beam etching apparatus 100. Accordingly, it is possible to reduce or eliminate the step of removing the jutting carbon fibers. Due to these reasons, the grid is manufactured easily and at low cost. Thus, it is possible to provide the grid which is high in rigidity and easy to process.
At least part of the grid 200 of this embodiment may be coated with a material which is different from carbon being the main component of the carbon-carbon composite. For example, it is possible to use a metal, a carbon coating of vapor grown carbon or glasslike carbon, or an insulating body as the coating material. By conducting the coating after the formation of the holes 202, the jutting of the carbon fibers can be suppressed more reliably.
The grid 200 of this embodiment is applicable not only to the ion beam etching apparatus shown in FIG. 1 , but also to ion beam processing apparatuses such as an ion beam film deposition apparatus. Note that a publicly known ion beam film deposition apparatus is used when the grid 200 of this embodiment is employed in the ion beam film deposition apparatus.
Claims (5)
1. A plate-shaped grid provided with a hole, wherein
the grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and
the hole is formed in the grid so as to cut off the carbon fibers.
2. The grid according to claim 1 , wherein the carbon fibers included in the carbon-carbon composite are chopped carbon fibers.
3. The grid according to claim 1 , wherein at least part of the carbon-carbon composite is coated with a different material from the carbon-carbon composite.
4. An ion beam processing apparatus comprising:
a plasma generating unit;
a processing chamber; and
a grid assembly including the grid according to claim 1 and configured to extract ions from plasma generated by the plasma generating unit to the processing chamber.
5. A method of manufacturing a grid comprising:
preparing a plate-shaped carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the carbon-carbon composite; and
forming a hole in the carbon-carbon composite so as to cut off the carbon fibers by using a processing tool configured to perform cutting by rotary motion.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015052363 | 2015-03-16 | ||
JP2015-052363 | 2015-03-16 | ||
PCT/JP2015/005851 WO2016147232A1 (en) | 2015-03-16 | 2015-11-25 | Grid, production method therefor and ion beam processing device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/005851 Continuation WO2016147232A1 (en) | 2015-03-16 | 2015-11-25 | Grid, production method therefor and ion beam processing device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20170084419A1 US20170084419A1 (en) | 2017-03-23 |
US9721747B2 true US9721747B2 (en) | 2017-08-01 |
Family
ID=56918553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/366,660 Active US9721747B2 (en) | 2015-03-16 | 2016-12-01 | Grid, method of manufacturing the same, and ion beam processing apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US9721747B2 (en) |
KR (1) | KR101893810B1 (en) |
SG (1) | SG11201610529QA (en) |
TW (1) | TWI588860B (en) |
WO (1) | WO2016147232A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101893810B1 (en) | 2015-03-16 | 2018-09-04 | 캐논 아네르바 가부시키가이샤 | Grid, production method therefor and ion beam processing device |
JP6810391B2 (en) * | 2018-05-18 | 2021-01-06 | 日新イオン機器株式会社 | Ion source |
KR102125063B1 (en) * | 2019-02-22 | 2020-06-19 | 박흥균 | Grid apparatus having a beam control function in semiconductor processing system and semiconductor thin film processing method using the same |
US20230031722A1 (en) * | 2021-07-23 | 2023-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage Control for Etching Systems |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04180621A (en) | 1990-02-23 | 1992-06-26 | Hitachi Ltd | Device and method for surface treatment |
US5548953A (en) | 1993-02-26 | 1996-08-27 | The Boeing Company | Carbon-carbon grid elements for ion thruster ion optics |
US6885010B1 (en) * | 2003-11-12 | 2005-04-26 | Thermo Electron Corporation | Carbon nanotube electron ionization sources |
US7034290B2 (en) * | 2004-09-24 | 2006-04-25 | Agilent Technologies, Inc. | Target support with pattern recognition sites |
US7075067B2 (en) * | 2004-10-15 | 2006-07-11 | Agilent Technologies, Inc. | Ionization chambers for mass spectrometry |
US7129513B2 (en) * | 2004-06-02 | 2006-10-31 | Xintek, Inc. | Field emission ion source based on nanostructure-containing material |
US7507972B2 (en) * | 2005-10-10 | 2009-03-24 | Owlstone Nanotech, Inc. | Compact ionization source |
US7633715B2 (en) * | 2005-01-06 | 2009-12-15 | Pioneer Corporation | Magnetic head for use in a heat-assisted magnetic recording apparatus |
US7750297B1 (en) * | 2007-03-09 | 2010-07-06 | University Of Central Florida Research Foundation, Inc. | Carbon nanotube collimator fabrication and application |
US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
US8288723B2 (en) * | 2007-03-30 | 2012-10-16 | Beijing Funate Innovation Technology Co., Ltd. | Transmission electron microscope micro-grid and method for making the same |
US8294098B2 (en) * | 2007-03-30 | 2012-10-23 | Tsinghua University | Transmission electron microscope micro-grid |
US8357881B2 (en) * | 2009-08-14 | 2013-01-22 | Tsinghua University | Carbon nanotube fabric and heater adopting the same |
US8841588B2 (en) * | 2009-03-27 | 2014-09-23 | Tsinghua University | Heater |
US20140353142A1 (en) * | 2011-12-27 | 2014-12-04 | Canon Anelva Corporation | Substrate processing apparatus, etching method of metal film, and manufacturing method of magnetoresistive effect element |
US9230772B2 (en) * | 2011-12-28 | 2016-01-05 | Schlumberger Technology Corporation | Device and method for ion generation |
WO2016147232A1 (en) | 2015-03-16 | 2016-09-22 | キヤノンアネルバ株式会社 | Grid, production method therefor and ion beam processing device |
US20160351377A1 (en) * | 2015-06-01 | 2016-12-01 | Canon Anelva Corporation | Ion beam etching apparatus and ion beam generator |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5448883A (en) * | 1993-02-26 | 1995-09-12 | The Boeing Company | Ion thruster with ion optics having carbon-carbon composite elements |
US5465023A (en) * | 1993-07-01 | 1995-11-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon-carbon grid for ion engines |
JP2013115012A (en) * | 2011-11-30 | 2013-06-10 | Ulvac Japan Ltd | Charged particle extraction irradiation mechanism |
-
2015
- 2015-11-25 KR KR1020167036134A patent/KR101893810B1/en active IP Right Grant
- 2015-11-25 SG SG11201610529QA patent/SG11201610529QA/en unknown
- 2015-11-25 WO PCT/JP2015/005851 patent/WO2016147232A1/en active Application Filing
-
2016
- 2016-03-02 TW TW105106337A patent/TWI588860B/en active
- 2016-12-01 US US15/366,660 patent/US9721747B2/en active Active
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5284544A (en) | 1990-02-23 | 1994-02-08 | Hitachi, Ltd. | Apparatus for and method of surface treatment for microelectronic devices |
JPH04180621A (en) | 1990-02-23 | 1992-06-26 | Hitachi Ltd | Device and method for surface treatment |
US5548953A (en) | 1993-02-26 | 1996-08-27 | The Boeing Company | Carbon-carbon grid elements for ion thruster ion optics |
US6885010B1 (en) * | 2003-11-12 | 2005-04-26 | Thermo Electron Corporation | Carbon nanotube electron ionization sources |
US20050098720A1 (en) * | 2003-11-12 | 2005-05-12 | Traynor Peter J. | Carbon nanotube electron ionization sources |
US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
US7129513B2 (en) * | 2004-06-02 | 2006-10-31 | Xintek, Inc. | Field emission ion source based on nanostructure-containing material |
US7034290B2 (en) * | 2004-09-24 | 2006-04-25 | Agilent Technologies, Inc. | Target support with pattern recognition sites |
US7075067B2 (en) * | 2004-10-15 | 2006-07-11 | Agilent Technologies, Inc. | Ionization chambers for mass spectrometry |
US7633715B2 (en) * | 2005-01-06 | 2009-12-15 | Pioneer Corporation | Magnetic head for use in a heat-assisted magnetic recording apparatus |
US7507972B2 (en) * | 2005-10-10 | 2009-03-24 | Owlstone Nanotech, Inc. | Compact ionization source |
US7750297B1 (en) * | 2007-03-09 | 2010-07-06 | University Of Central Florida Research Foundation, Inc. | Carbon nanotube collimator fabrication and application |
US8288723B2 (en) * | 2007-03-30 | 2012-10-16 | Beijing Funate Innovation Technology Co., Ltd. | Transmission electron microscope micro-grid and method for making the same |
US8294098B2 (en) * | 2007-03-30 | 2012-10-23 | Tsinghua University | Transmission electron microscope micro-grid |
US8841588B2 (en) * | 2009-03-27 | 2014-09-23 | Tsinghua University | Heater |
US8357881B2 (en) * | 2009-08-14 | 2013-01-22 | Tsinghua University | Carbon nanotube fabric and heater adopting the same |
US20140353142A1 (en) * | 2011-12-27 | 2014-12-04 | Canon Anelva Corporation | Substrate processing apparatus, etching method of metal film, and manufacturing method of magnetoresistive effect element |
US9230772B2 (en) * | 2011-12-28 | 2016-01-05 | Schlumberger Technology Corporation | Device and method for ion generation |
WO2016147232A1 (en) | 2015-03-16 | 2016-09-22 | キヤノンアネルバ株式会社 | Grid, production method therefor and ion beam processing device |
US20160351377A1 (en) * | 2015-06-01 | 2016-12-01 | Canon Anelva Corporation | Ion beam etching apparatus and ion beam generator |
Non-Patent Citations (2)
Title |
---|
International Search Report in International Application No. PCT/JP2015/005851 (mailed Dec. 2015). |
STIC Non patent literature search information on Carbon-carbon composites is included from Science.gov/science direct. * |
Also Published As
Publication number | Publication date |
---|---|
KR20170012395A (en) | 2017-02-02 |
KR101893810B1 (en) | 2018-09-04 |
TWI588860B (en) | 2017-06-21 |
US20170084419A1 (en) | 2017-03-23 |
SG11201610529QA (en) | 2017-01-27 |
TW201643926A (en) | 2016-12-16 |
WO2016147232A1 (en) | 2016-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9721747B2 (en) | Grid, method of manufacturing the same, and ion beam processing apparatus | |
TWI428953B (en) | Method and device for treating the surface of at least one part by using elementary plasma sources by electron cyclotron resonance | |
KR20210038938A (en) | Method and apparatus for plasma processing | |
EP1944790A2 (en) | Improvements relating to ion implanters | |
JP6652255B2 (en) | Ion implantation system | |
JP6220749B2 (en) | Ion gun, ion milling apparatus, and ion milling method | |
JP2008186806A (en) | Ion beam device | |
JP6539414B2 (en) | Ion implanter repeller, cathode, chamber wall, slit member, and ion generator including the same | |
TWI673776B (en) | Sic coating in an ion implanter | |
JP2015170598A (en) | Plasma-based material modification using plasma source with magnetic confinement | |
KR20170019386A (en) | Ion implantation source with textured interior surfaces | |
US20220262598A1 (en) | Ion beam processing apparatus, electrode assembly, and method of cleaning electrode assembly | |
JP5970143B1 (en) | Grid, manufacturing method thereof, and ion beam processing apparatus | |
US8168946B2 (en) | Charged particle separation apparatus and charged particle bombardment apparatus | |
JP6509553B2 (en) | Sputtering device | |
WO2009116579A1 (en) | Plasma processing method and plasma processing apparatus | |
KR101547066B1 (en) | Low-damage plasma processing apparatus | |
JP2023101120A (en) | Ion milling source, vacuum processor, and method for vacuum processing | |
RU2395134C2 (en) | Device for plasma-chemical treatment of materials | |
KR101582645B1 (en) | Silt membrane for ion implanter and ion generation device | |
WO2017221832A1 (en) | Plasma source and plasma processing device | |
KR20150080462A (en) | Metal wire plasma immersion ion implantation equipment and method | |
TW201448677A (en) | Plasma generating device, plasma processing device, plasma generating method and plasma processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CANON ANELVA CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TSUJIYAMA, MASASHI;NAKAGAWA, YUKITO;YASUMATSU, YASUSHI;REEL/FRAME:040837/0802 Effective date: 20161227 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |