US9306172B2 - Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors - Google Patents
Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors Download PDFInfo
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- US9306172B2 US9306172B2 US13/816,590 US201113816590A US9306172B2 US 9306172 B2 US9306172 B2 US 9306172B2 US 201113816590 A US201113816590 A US 201113816590A US 9306172 B2 US9306172 B2 US 9306172B2
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- heteroaryl
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- 239000004065 semiconductor Substances 0.000 title abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 38
- -1 selenopheno[3,2-b]selenophene-2,5-diyl Chemical group 0.000 claims description 178
- 239000010410 layer Substances 0.000 claims description 121
- 150000001875 compounds Chemical class 0.000 claims description 107
- 239000000203 mixture Substances 0.000 claims description 94
- 239000011230 binding agent Substances 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 53
- 238000009472 formulation Methods 0.000 claims description 52
- 239000002904 solvent Substances 0.000 claims description 49
- 125000004432 carbon atom Chemical group C* 0.000 claims description 35
- 125000001072 heteroaryl group Chemical group 0.000 claims description 26
- 125000003118 aryl group Chemical group 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 19
- 229910052731 fluorine Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 125000006413 ring segment Chemical group 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 229910052801 chlorine Inorganic materials 0.000 claims description 13
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 12
- PCSMJKASWLYICJ-UHFFFAOYSA-N Succinic aldehyde Chemical compound O=CCCC=O PCSMJKASWLYICJ-UHFFFAOYSA-N 0.000 claims description 11
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- ZETHHMPKDUSZQQ-UHFFFAOYSA-N Betulafolienepentol Natural products C1C=C(C)CCC(C(C)CCC=C(C)C)C2C(OC)OC(OC)C2=C1 ZETHHMPKDUSZQQ-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- HEOKFDGOFROELJ-UHFFFAOYSA-N diacetal Natural products COc1ccc(C=C/c2cc(O)cc(OC3OC(COC(=O)c4cc(O)c(O)c(O)c4)C(O)C(O)C3O)c2)cc1O HEOKFDGOFROELJ-UHFFFAOYSA-N 0.000 claims description 10
- 150000002009 diols Chemical class 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 8
- 125000003800 germyl group Chemical group [H][Ge]([H])([H])[*] 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910052740 iodine Inorganic materials 0.000 claims description 8
- WSEJZRIZDQWMKQ-UHFFFAOYSA-N thiophene-2,3-dicarbaldehyde Chemical compound O=CC=1C=CSC=1C=O WSEJZRIZDQWMKQ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- JRNVZBWKYDBUCA-UHFFFAOYSA-N N-Chlorosuccinimide Substances ClN1C(=O)CCC1=O JRNVZBWKYDBUCA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 6
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 5
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 5
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 125000003107 substituted aryl group Chemical group 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 claims description 4
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 claims description 4
- LQZMLBORDGWNPD-UHFFFAOYSA-N N-iodosuccinimide Chemical compound IN1C(=O)CCC1=O LQZMLBORDGWNPD-UHFFFAOYSA-N 0.000 claims description 4
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 4
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- 238000006880 cross-coupling reaction Methods 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 238000006138 lithiation reaction Methods 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910000080 stannane Inorganic materials 0.000 claims description 4
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- 125000004001 thioalkyl group Chemical group 0.000 claims description 4
- ODIRBFFBCSTPTO-UHFFFAOYSA-N 1,3-selenazole Chemical compound C1=C[se]C=N1 ODIRBFFBCSTPTO-UHFFFAOYSA-N 0.000 claims description 3
- 125000001462 1-pyrrolyl group Chemical group [*]N1C([H])=C([H])C([H])=C1[H] 0.000 claims description 3
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical compound N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 claims description 3
- QZRGKCOWNLSUDK-UHFFFAOYSA-N Iodochlorine Chemical compound ICl QZRGKCOWNLSUDK-UHFFFAOYSA-N 0.000 claims description 3
- 108091028043 Nucleic acid sequence Proteins 0.000 claims description 3
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims description 3
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 125000004446 heteroarylalkyl group Chemical group 0.000 claims description 3
- 125000005553 heteroaryloxy group Chemical group 0.000 claims description 3
- 238000013086 organic photovoltaic Methods 0.000 claims description 3
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- MABNMNVCOAICNO-UHFFFAOYSA-N selenophene Chemical compound C=1C=C[se]C=1 MABNMNVCOAICNO-UHFFFAOYSA-N 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 125000006169 tetracyclic group Chemical group 0.000 claims description 3
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 claims description 3
- 125000006168 tricyclic group Chemical group 0.000 claims description 3
- AIGNCQCMONAWOL-UHFFFAOYSA-N 1,3-benzoselenazole Chemical compound C1=CC=C2[se]C=NC2=C1 AIGNCQCMONAWOL-UHFFFAOYSA-N 0.000 claims description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 claims description 2
- BNRDGHFESOHOBF-UHFFFAOYSA-N 1-benzoselenophene Chemical compound C1=CC=C2[se]C=CC2=C1 BNRDGHFESOHOBF-UHFFFAOYSA-N 0.000 claims description 2
- 238000000018 DNA microarray Methods 0.000 claims description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 2
- 125000005194 alkoxycarbonyloxy group Chemical group 0.000 claims description 2
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 claims description 2
- 125000002102 aryl alkyloxo group Chemical group 0.000 claims description 2
- 125000005605 benzo group Chemical group 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 2
- VGWBXRXNERKBSJ-UHFFFAOYSA-N dithieno[2,3-a:2',3'-d]thiophene Chemical compound C1=CSC2=C1SC1=C2SC=C1 VGWBXRXNERKBSJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 230000026030 halogenation Effects 0.000 claims description 2
- 238000005658 halogenation reaction Methods 0.000 claims description 2
- 125000005114 heteroarylalkoxy group Chemical group 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000005518 polymer electrolyte Substances 0.000 claims description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 2
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 claims description 2
- WCZBUQIZTSIQFE-UHFFFAOYSA-N furan;thiophene Chemical compound C=1C=COC=1.C=1C=CSC=1 WCZBUQIZTSIQFE-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 230000002140 halogenating effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 39
- 239000007787 solid Substances 0.000 description 37
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 28
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 26
- 230000037230 mobility Effects 0.000 description 25
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 23
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical class C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 20
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 239000000306 component Substances 0.000 description 17
- 229920001577 copolymer Chemical group 0.000 description 17
- 239000011541 reaction mixture Substances 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 239000007788 liquid Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000005160 1H NMR spectroscopy Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 0 [1*]C1=C2C=C3CC(C)CC3=CC2=C([2*])C2=CC3=C(C=C21)CC(C)C3 Chemical compound [1*]C1=C2C=C3CC(C)CC3=CC2=C([2*])C2=CC3=C(C=C21)CC(C)C3 0.000 description 12
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 11
- 239000003480 eluent Substances 0.000 description 11
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 10
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 10
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 10
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical class CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 10
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000003208 petroleum Substances 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 238000000967 suction filtration Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 238000003818 flash chromatography Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical class C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 229920001400 block copolymer Polymers 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229920003026 Acene Polymers 0.000 description 5
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 5
- 229960001701 chloroform Drugs 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052701 rubidium Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical class C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 150000004982 aromatic amines Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 150000001555 benzenes Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910003472 fullerene Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229920003251 poly(α-methylstyrene) Polymers 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 229910052705 radium Inorganic materials 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 125000000547 substituted alkyl group Chemical group 0.000 description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- HVOYIZOZZMESIN-UHFFFAOYSA-N 5-(5-fluorothiophen-2-yl)thiophene-2,3-dicarbaldehyde Chemical compound S1C(F)=CC=C1C1=CC(C=O)=C(C=O)S1 HVOYIZOZZMESIN-UHFFFAOYSA-N 0.000 description 3
- BJOPFNXPSLMKGS-UHFFFAOYSA-N 5-iodothiophene-2,3-dicarbaldehyde Chemical compound IC1=CC(C=O)=C(C=O)S1 BJOPFNXPSLMKGS-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 3
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 3
- 230000021615 conjugation Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- DCZFGQYXRKMVFG-UHFFFAOYSA-N cyclohexane-1,4-dione Chemical compound O=C1CCC(=O)CC1 DCZFGQYXRKMVFG-UHFFFAOYSA-N 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 239000004811 fluoropolymer Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011877 solvent mixture Substances 0.000 description 3
- 235000011150 stannous chloride Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 3
- UKTDFYOZPFNQOQ-UHFFFAOYSA-N tributyl(thiophen-2-yl)stannane Chemical compound CCCC[Sn](CCCC)(CCCC)C1=CC=CS1 UKTDFYOZPFNQOQ-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- GETTZEONDQJALK-UHFFFAOYSA-N (trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1 GETTZEONDQJALK-UHFFFAOYSA-N 0.000 description 2
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- BFIMMTCNYPIMRN-UHFFFAOYSA-N 1,2,3,5-tetramethylbenzene Chemical compound CC1=CC(C)=C(C)C(C)=C1 BFIMMTCNYPIMRN-UHFFFAOYSA-N 0.000 description 2
- GWHJZXXIDMPWGX-UHFFFAOYSA-N 1,2,4-trimethylbenzene Chemical compound CC1=CC=C(C)C(C)=C1 GWHJZXXIDMPWGX-UHFFFAOYSA-N 0.000 description 2
- VZHJIJZEOCBKRA-UHFFFAOYSA-N 1-chloro-3-fluorobenzene Chemical compound FC1=CC=CC(Cl)=C1 VZHJIJZEOCBKRA-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 2
- OXQOBQJCDNLAPO-UHFFFAOYSA-N 2,3-Dimethylpyrazine Chemical compound CC1=NC=CN=C1C OXQOBQJCDNLAPO-UHFFFAOYSA-N 0.000 description 2
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 2
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical group C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- ACYKMQVFZIBUBZ-UHFFFAOYSA-N CC#CC1=C2C=C3C=C(C4=CC=C(F)S4)SC3=CC2=C(C#CC)C2=CC3=C(C=C21)SC(C1=CC=C(F)S1)=C3.CC#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#CC)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3 Chemical compound CC#CC1=C2C=C3C=C(C4=CC=C(F)S4)SC3=CC2=C(C#CC)C2=CC3=C(C=C21)SC(C1=CC=C(F)S1)=C3.CC#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#CC)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3 ACYKMQVFZIBUBZ-UHFFFAOYSA-N 0.000 description 2
- MNJFRNWKMXXJKL-UHFFFAOYSA-N CC1=C(C)C(C)=C(C)O1.CC1=C(C)C(C)=C(C)S1.CC1=C(C)C(C)=C(C)[Se]1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2O1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2S1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2[Se]1.CC1=C(C)C2=C(S1)C(C)=C(C)S2.CC1=C(C)C2=C(S1)SC(C)=C2C.CC1=NC(C)=C(C)C(C)=N1.CC1=NC(C)=C(C)O1.CC1=NC(C)=C(C)S1.CC1=NC(C)=C(C)[Se]1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2O1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2S1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2[Se]1 Chemical compound CC1=C(C)C(C)=C(C)O1.CC1=C(C)C(C)=C(C)S1.CC1=C(C)C(C)=C(C)[Se]1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2O1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2S1.CC1=C(C)C2=C(C)C(C)=C(C)C(C)=C2[Se]1.CC1=C(C)C2=C(S1)C(C)=C(C)S2.CC1=C(C)C2=C(S1)SC(C)=C2C.CC1=NC(C)=C(C)C(C)=N1.CC1=NC(C)=C(C)O1.CC1=NC(C)=C(C)S1.CC1=NC(C)=C(C)[Se]1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2O1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2S1.CC1=NC2=C(C)C(C)=C(C)C(C)=C2[Se]1 MNJFRNWKMXXJKL-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000004890 Hydrophobing Agent Substances 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- PWATWSYOIIXYMA-UHFFFAOYSA-N Pentylbenzene Chemical compound CCCCCC1=CC=CC=C1 PWATWSYOIIXYMA-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- MOYAFQVGZZPNRA-UHFFFAOYSA-N Terpinolene Chemical compound CC(C)=C1CCC(C)=CC1 MOYAFQVGZZPNRA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 229910001914 chlorine tetroxide Inorganic materials 0.000 description 2
- 229940125904 compound 1 Drugs 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 229930007927 cymene Natural products 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- KZGWPHUWNWRTEP-UHFFFAOYSA-N ethynyl-tri(propan-2-yl)silane Chemical group CC(C)[Si](C#C)(C(C)C)C(C)C KZGWPHUWNWRTEP-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229940078552 o-xylene Drugs 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 125000005582 pentacene group Chemical group 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000314 poly p-methyl styrene Polymers 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010020 roller printing Methods 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- JAOZKJMVYIWLKU-UHFFFAOYSA-N sodium 7-hydroxy-8-[(4-sulfonaphthalen-1-yl)diazenyl]naphthalene-1,3-disulfonic acid Chemical compound C1=CC=C2C(=C1)C(=CC=C2S(=O)(=O)O)N=NC3=C(C=CC4=CC(=CC(=C43)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] JAOZKJMVYIWLKU-UHFFFAOYSA-N 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 125000005259 triarylamine group Chemical group 0.000 description 2
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- QWQBQRYFWNIDOC-UHFFFAOYSA-N (3,5-difluorophenyl)boronic acid Chemical compound OB(O)C1=CC(F)=CC(F)=C1 QWQBQRYFWNIDOC-UHFFFAOYSA-N 0.000 description 1
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- YSNVKDGEALPJGC-UHFFFAOYSA-N 1,4-difluoro-2-methylbenzene Chemical compound CC1=CC(F)=CC=C1F YSNVKDGEALPJGC-UHFFFAOYSA-N 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- OSIGJGFTADMDOB-UHFFFAOYSA-N 1-Methoxy-3-methylbenzene Chemical compound COC1=CC=CC(C)=C1 OSIGJGFTADMDOB-UHFFFAOYSA-N 0.000 description 1
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 1
- AJCSNHQKXUSMMY-UHFFFAOYSA-N 1-chloro-2,4-difluorobenzene Chemical compound FC1=CC=C(Cl)C(F)=C1 AJCSNHQKXUSMMY-UHFFFAOYSA-N 0.000 description 1
- DGRVQOKCSKDWIH-UHFFFAOYSA-N 1-chloro-2-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1Cl DGRVQOKCSKDWIH-UHFFFAOYSA-N 0.000 description 1
- ZCJAYDKWZAWMPR-UHFFFAOYSA-N 1-chloro-2-fluorobenzene Chemical compound FC1=CC=CC=C1Cl ZCJAYDKWZAWMPR-UHFFFAOYSA-N 0.000 description 1
- FNPVYRJTBXHIPB-UHFFFAOYSA-N 1-chloro-3-fluoro-2-methylbenzene Chemical compound CC1=C(F)C=CC=C1Cl FNPVYRJTBXHIPB-UHFFFAOYSA-N 0.000 description 1
- RJCGZNCCVKIBHO-UHFFFAOYSA-N 1-chloro-4-fluorobenzene Chemical compound FC1=CC=C(Cl)C=C1 RJCGZNCCVKIBHO-UHFFFAOYSA-N 0.000 description 1
- OEVVKKAVYQFQNV-UHFFFAOYSA-N 1-ethenyl-2,4-dimethylbenzene Chemical compound CC1=CC=C(C=C)C(C)=C1 OEVVKKAVYQFQNV-UHFFFAOYSA-N 0.000 description 1
- AWLDSXJCQWTJPC-UHFFFAOYSA-N 1-fluoro-2,3-dimethylbenzene Chemical group CC1=CC=CC(F)=C1C AWLDSXJCQWTJPC-UHFFFAOYSA-N 0.000 description 1
- BGVGHYOIWIALFF-UHFFFAOYSA-N 1-fluoro-2-(trifluoromethyl)benzene Chemical compound FC1=CC=CC=C1C(F)(F)F BGVGHYOIWIALFF-UHFFFAOYSA-N 0.000 description 1
- JIXDOBAQOWOUPA-UHFFFAOYSA-N 1-fluoro-2-methoxybenzene Chemical compound COC1=CC=CC=C1F JIXDOBAQOWOUPA-UHFFFAOYSA-N 0.000 description 1
- MMZYCBHLNZVROM-UHFFFAOYSA-N 1-fluoro-2-methylbenzene Chemical compound CC1=CC=CC=C1F MMZYCBHLNZVROM-UHFFFAOYSA-N 0.000 description 1
- IWFKMNAEFPEIOY-UHFFFAOYSA-N 1-fluoro-3,5-dimethoxybenzene Chemical compound COC1=CC(F)=CC(OC)=C1 IWFKMNAEFPEIOY-UHFFFAOYSA-N 0.000 description 1
- GBOWGKOVMBDPJF-UHFFFAOYSA-N 1-fluoro-3-(trifluoromethyl)benzene Chemical compound FC1=CC=CC(C(F)(F)F)=C1 GBOWGKOVMBDPJF-UHFFFAOYSA-N 0.000 description 1
- MFJNOXOAIFNSBX-UHFFFAOYSA-N 1-fluoro-3-methoxybenzene Chemical compound COC1=CC=CC(F)=C1 MFJNOXOAIFNSBX-UHFFFAOYSA-N 0.000 description 1
- BTQZKHUEUDPRST-UHFFFAOYSA-N 1-fluoro-3-methylbenzene Chemical compound CC1=CC=CC(F)=C1 BTQZKHUEUDPRST-UHFFFAOYSA-N 0.000 description 1
- UNNNAIWPDLRVRN-UHFFFAOYSA-N 1-fluoro-4-(trifluoromethyl)benzene Chemical compound FC1=CC=C(C(F)(F)F)C=C1 UNNNAIWPDLRVRN-UHFFFAOYSA-N 0.000 description 1
- XZBXPBDJLUJLEU-UHFFFAOYSA-N 1-fluoro-4-methoxy-2-methylbenzene Chemical compound COC1=CC=C(F)C(C)=C1 XZBXPBDJLUJLEU-UHFFFAOYSA-N 0.000 description 1
- VIPWUFMFHBIKQI-UHFFFAOYSA-N 1-fluoro-4-methoxybenzene Chemical compound COC1=CC=C(F)C=C1 VIPWUFMFHBIKQI-UHFFFAOYSA-N 0.000 description 1
- WRWPPGUCZBJXKX-UHFFFAOYSA-N 1-fluoro-4-methylbenzene Chemical compound CC1=CC=C(F)C=C1 WRWPPGUCZBJXKX-UHFFFAOYSA-N 0.000 description 1
- JCHJBEZBHANKGA-UHFFFAOYSA-N 1-methoxy-3,5-dimethylbenzene Chemical compound COC1=CC(C)=CC(C)=C1 JCHJBEZBHANKGA-UHFFFAOYSA-N 0.000 description 1
- XHONYVFDZSPELQ-UHFFFAOYSA-N 1-methoxy-3-(trifluoromethyl)benzene Chemical compound COC1=CC=CC(C(F)(F)F)=C1 XHONYVFDZSPELQ-UHFFFAOYSA-N 0.000 description 1
- KWSHGRJUSUJPQD-UHFFFAOYSA-N 1-phenyl-4-propan-2-ylbenzene Chemical group C1=CC(C(C)C)=CC=C1C1=CC=CC=C1 KWSHGRJUSUJPQD-UHFFFAOYSA-N 0.000 description 1
- QCWXDVFBZVHKLV-UHFFFAOYSA-N 1-tert-butyl-4-methylbenzene Chemical compound CC1=CC=C(C(C)(C)C)C=C1 QCWXDVFBZVHKLV-UHFFFAOYSA-N 0.000 description 1
- UJCFZCTTZWHRNL-UHFFFAOYSA-N 2,4-Dimethylanisole Chemical compound COC1=CC=C(C)C=C1C UJCFZCTTZWHRNL-UHFFFAOYSA-N 0.000 description 1
- RSTWFWSFOHXEIE-UHFFFAOYSA-N 2,8-diiodo-anthra[2,3-b:7,6-b']dithiophene-5,11-dione Chemical compound O=C1C2=CC=3C=C(I)SC=3C=C2C(=O)C2=C1C=C1C=C(I)SC1=C2 RSTWFWSFOHXEIE-UHFFFAOYSA-N 0.000 description 1
- XWCKSJOUZQHFKI-UHFFFAOYSA-N 2-chloro-1,4-difluorobenzene Chemical compound FC1=CC=C(F)C(Cl)=C1 XWCKSJOUZQHFKI-UHFFFAOYSA-N 0.000 description 1
- KZMAWJRXKGLWGS-UHFFFAOYSA-N 2-chloro-n-[4-(4-methoxyphenyl)-1,3-thiazol-2-yl]-n-(3-methoxypropyl)acetamide Chemical compound S1C(N(C(=O)CCl)CCCOC)=NC(C=2C=CC(OC)=CC=2)=C1 KZMAWJRXKGLWGS-UHFFFAOYSA-N 0.000 description 1
- JTAUTNBVFDTYTI-UHFFFAOYSA-N 2-fluoro-1,3-dimethylbenzene Chemical group CC1=CC=CC(C)=C1F JTAUTNBVFDTYTI-UHFFFAOYSA-N 0.000 description 1
- GDHXJNRAJRCGMX-UHFFFAOYSA-N 2-fluorobenzonitrile Chemical compound FC1=CC=CC=C1C#N GDHXJNRAJRCGMX-UHFFFAOYSA-N 0.000 description 1
- MTAODLNXWYIKSO-UHFFFAOYSA-N 2-fluoropyridine Chemical compound FC1=CC=CC=N1 MTAODLNXWYIKSO-UHFFFAOYSA-N 0.000 description 1
- 125000002941 2-furyl group Chemical group O1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- GFNZJAUVJCGWLW-UHFFFAOYSA-N 2-methoxy-1,3-dimethylbenzene Chemical compound COC1=C(C)C=CC=C1C GFNZJAUVJCGWLW-UHFFFAOYSA-N 0.000 description 1
- SJZAUIVYZWPNAS-UHFFFAOYSA-N 2-methoxy-1,4-dimethylbenzene Chemical compound COC1=CC(C)=CC=C1C SJZAUIVYZWPNAS-UHFFFAOYSA-N 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2-methyl-5-methylpyridine Natural products CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 1
- DTFKRVXLBCAIOZ-UHFFFAOYSA-N 2-methylanisole Chemical compound COC1=CC=CC=C1C DTFKRVXLBCAIOZ-UHFFFAOYSA-N 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- BXVVMSMTWXVEOH-UHFFFAOYSA-N 3,6-bis(difluoromethylidene)cyclohexa-1,4-diene Chemical group FC(F)=C1C=CC(=C(F)F)C=C1 BXVVMSMTWXVEOH-UHFFFAOYSA-N 0.000 description 1
- JZTPKAROPNTQQV-UHFFFAOYSA-N 3-fluorobenzonitrile Chemical compound FC1=CC=CC(C#N)=C1 JZTPKAROPNTQQV-UHFFFAOYSA-N 0.000 description 1
- CELKOWQJPVJKIL-UHFFFAOYSA-N 3-fluoropyridine Chemical compound FC1=CC=CN=C1 CELKOWQJPVJKIL-UHFFFAOYSA-N 0.000 description 1
- 125000001331 3-methylbutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000005917 3-methylpentyl group Chemical group 0.000 description 1
- DAGKHJDZYJFWSO-UHFFFAOYSA-N 4-fluoro-1,2-dimethoxybenzene Chemical compound COC1=CC=C(F)C=C1OC DAGKHJDZYJFWSO-UHFFFAOYSA-N 0.000 description 1
- 125000006043 5-hexenyl group Chemical group 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical class [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 description 1
- 241000913992 Aprion Species 0.000 description 1
- 229910017049 AsF5 Inorganic materials 0.000 description 1
- 229910017048 AsF6 Inorganic materials 0.000 description 1
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ANVAHNCOPHRAJN-UHFFFAOYSA-N CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC(F)=CC(F)=C4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC(F)=CC(F)=C1)=C3)(C(C)C)C(C)C Chemical compound CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC(F)=CC(F)=C4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC(F)=CC(F)=C1)=C3)(C(C)C)C(C)C ANVAHNCOPHRAJN-UHFFFAOYSA-N 0.000 description 1
- GZVAFBGZAOSHSZ-UHFFFAOYSA-N CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC=C(F)S4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC=C(F)S1)=C3)(C(C)C)C(C)C Chemical compound CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC=C(F)S4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC=C(F)S1)=C3)(C(C)C)C(C)C GZVAFBGZAOSHSZ-UHFFFAOYSA-N 0.000 description 1
- PSZFVWLEHJOQRI-UHFFFAOYSA-N CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3)(C(C)C)C(C)C Chemical compound CC(C)[Si](C#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3)(C(C)C)C(C)C PSZFVWLEHJOQRI-UHFFFAOYSA-N 0.000 description 1
- PZCYHSZYXNFPSJ-UHFFFAOYSA-N CC.CC.CC.COC(=O)CCCCC12/C3=C4C5=C6C7=C3C3=C8C9=C7/C7=C%10C%11=C/9C9/C8=C8\C%12=C/C9/C=C%11/CC\%10CC(=C\67)\C=C5\CC/4CC1(C1=CC=CC=C1)CC(C\%12)\C8=C\32 Chemical compound CC.CC.CC.COC(=O)CCCCC12/C3=C4C5=C6C7=C3C3=C8C9=C7/C7=C%10C%11=C/9C9/C8=C8\C%12=C/C9/C=C%11/CC\%10CC(=C\67)\C=C5\CC/4CC1(C1=CC=CC=C1)CC(C\%12)\C8=C\32 PZCYHSZYXNFPSJ-UHFFFAOYSA-N 0.000 description 1
- DLIRYMWDYSEYIR-UHFFFAOYSA-N CC.CCN(C)C Chemical compound CC.CCN(C)C DLIRYMWDYSEYIR-UHFFFAOYSA-N 0.000 description 1
- YIZFDFMSYLIOHO-JLMMQWLNSA-N CC1=C(C)C(=O)N(C)C1=O.COCC1(C)COC1.[2H]C[W]1OC1C Chemical compound CC1=C(C)C(=O)N(C)C1=O.COCC1(C)COC1.[2H]C[W]1OC1C YIZFDFMSYLIOHO-JLMMQWLNSA-N 0.000 description 1
- JFMOEAUCEDWSLO-UHFFFAOYSA-N CC1=CC=C(C2=CC=CS2)S1 Chemical compound CC1=CC=C(C2=CC=CS2)S1 JFMOEAUCEDWSLO-UHFFFAOYSA-N 0.000 description 1
- CEKOIFADAHJOHQ-UHFFFAOYSA-N CC1=CC=CC(C2=CC=C(N(C3=CC=C(C4=CC=CC(C)=C4)C=C3)C3=C(C)C=C(C)C=C3)C=C2)=C1 Chemical compound CC1=CC=CC(C2=CC=C(N(C3=CC=C(C4=CC=CC(C)=C4)C=C3)C3=C(C)C=C(C)C=C3)C=C2)=C1 CEKOIFADAHJOHQ-UHFFFAOYSA-N 0.000 description 1
- XQQBUAPQHNYYRS-UHFFFAOYSA-N CC1=CC=CS1 Chemical compound CC1=CC=CS1 XQQBUAPQHNYYRS-UHFFFAOYSA-N 0.000 description 1
- ZVPRWBKZIAEYOA-UHFFFAOYSA-N CC[Si](C#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#C[Si](CC)(CC)CC)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3)(CC)CC Chemical compound CC[Si](C#CC1=C2C=C3C=C(C4=CC=CS4)SC3=CC2=C(C#C[Si](CC)(CC)CC)C2=CC3=C(C=C21)SC(C1=CC=CS1)=C3)(CC)CC ZVPRWBKZIAEYOA-UHFFFAOYSA-N 0.000 description 1
- YGPQKRYLXIKKAZ-XZVVQQHRSA-N COCC1(C)COC1.[2H]C[W]1OC1C Chemical compound COCC1(C)COC1.[2H]C[W]1OC1C YGPQKRYLXIKKAZ-XZVVQQHRSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910005185 FSO3H Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910003865 HfCl4 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229920002633 Kraton (polymer) Polymers 0.000 description 1
- 229910020851 La(NO3)3.6H2O Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910015221 MoCl5 Inorganic materials 0.000 description 1
- 229910015253 MoF5 Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910019804 NbCl5 Inorganic materials 0.000 description 1
- 229910019787 NbF5 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021174 PF5 Inorganic materials 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N Pd(PPh3)4 Substances [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000006069 Suzuki reaction reaction Methods 0.000 description 1
- 229910004537 TaCl5 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229910003091 WCl6 Inorganic materials 0.000 description 1
- 229910009033 WF5 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007932 ZrCl4 Inorganic materials 0.000 description 1
- OIPILFWXSMYKGL-UHFFFAOYSA-N acetylcholine Chemical compound CC(=O)OCC[N+](C)(C)C OIPILFWXSMYKGL-UHFFFAOYSA-N 0.000 description 1
- 229960004373 acetylcholine Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000005899 aromatization reaction Methods 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 125000005569 butenylene group Chemical group 0.000 description 1
- 125000004744 butyloxycarbonyl group Chemical group 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- ZYZWOSIRFVIBRH-UHFFFAOYSA-N chloroform;cyclohexane Chemical compound ClC(Cl)Cl.C1CCCCC1 ZYZWOSIRFVIBRH-UHFFFAOYSA-N 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 230000001268 conjugating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- JHAYEQICABJSTP-UHFFFAOYSA-N decoquinate Chemical group N1C=C(C(=O)OCC)C(=O)C2=C1C=C(OCC)C(OCCCCCCCCCC)=C2 JHAYEQICABJSTP-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001212 derivatisation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001983 dialkylethers Chemical class 0.000 description 1
- 229920000359 diblock copolymer Polymers 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- NJSUFZNXBBXAAC-UHFFFAOYSA-N ethanol;toluene Chemical compound CCO.CC1=CC=CC=C1 NJSUFZNXBBXAAC-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- ZHNUHDYFZUAESO-UHFFFAOYSA-N formamide Substances NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 1
- 229940052308 general anesthetics halogenated hydrocarbons Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 235000013847 iso-butane Nutrition 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 1
- SNVLJLYUUXKWOJ-UHFFFAOYSA-N methylidenecarbene Chemical compound C=[C] SNVLJLYUUXKWOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- NBJFDNVXVFBQDX-UHFFFAOYSA-I molybdenum pentafluoride Chemical compound F[Mo](F)(F)(F)F NBJFDNVXVFBQDX-UHFFFAOYSA-I 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RLKHFSNWQCZBDC-UHFFFAOYSA-N n-(benzenesulfonyl)-n-fluorobenzenesulfonamide Chemical compound C=1C=CC=CC=1S(=O)(=O)N(F)S(=O)(=O)C1=CC=CC=C1 RLKHFSNWQCZBDC-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- PCILLCXFKWDRMK-UHFFFAOYSA-N naphthalene-1,4-diol Chemical compound C1=CC=C2C(O)=CC=C(O)C2=C1 PCILLCXFKWDRMK-UHFFFAOYSA-N 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- WXHIJDCHNDBCNY-UHFFFAOYSA-N palladium dihydride Chemical compound [PdH2] WXHIJDCHNDBCNY-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000002964 pentacenes Chemical class 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001148 pentyloxycarbonyl group Chemical group 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229920005548 perfluoropolymer Polymers 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 150000008379 phenol ethers Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001596 poly (chlorostyrenes) Polymers 0.000 description 1
- 229920002587 poly(1,3-butadiene) polymer Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002776 polycyclohexyl methacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 125000006410 propenylene group Chemical group 0.000 description 1
- 125000004742 propyloxycarbonyl group Chemical group 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical class [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 description 1
- XTHPWXDJESJLNJ-UHFFFAOYSA-N sulfurochloridic acid Chemical compound OS(Cl)(=O)=O XTHPWXDJESJLNJ-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000004055 thiomethyl group Chemical group [H]SC([H])([H])* 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FWSPXZXVNVQHIF-UHFFFAOYSA-N triethyl(ethynyl)silane Chemical group CC[Si](CC)(CC)C#C FWSPXZXVNVQHIF-UHFFFAOYSA-N 0.000 description 1
- GQHWSLKNULCZGI-UHFFFAOYSA-N trifluoromethoxybenzene Chemical compound FC(F)(F)OC1=CC=CC=C1 GQHWSLKNULCZGI-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- NNPPMTNAJDCUHE-UHFFFAOYSA-N trimethylmethane Natural products CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
-
- H01L51/0056—
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/52—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
- C07F7/0812—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the invention relates to novel anthra[2,3-b:7,6-b′]dithiophene derivatives, methods of their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising these derivatives.
- Linearly fused acenes like for example pentacene derivatives, are a promising class of molecular semiconducting materials (J. E. Anthony, Angew. Chem. Int. Ed., 2008, 47, 452; J. E. Anthony, Chem. Rev., 2006, 106, 5028).
- pentacene When deposited as a thin film by vacuum deposition, pentacene was shown to have hole mobilities in excess of 1 cm 2 V ⁇ 1 s ⁇ 1 with very high current on/off ratios greater than 10 6 (S. F. Nelson, Y. Y. Lin, D. J. Gundlach, T. N. Jackson, Appl. Phys. Lett., 1998, 72, 1854).
- Anthra[2,3-b:7,6-b]dithiophene which is an iso-electronic structure of pentacene, has been proved to be another class of molecular semiconductors with improved performances in field-effect transistors (M. M. Payne, S. R. Parkin, J. E. Anthony, C.-C. Kuo and T. N. Jackson, J. Am. Chem. Soc., 2005, 127 (14), 4986; S. Subramanian, S. K. Park, S. R. Parkin, V. Podzorov, T. N. Jackson, J. E. Anthony, J. Am. Chem. Soc., 2008, 130 (9), 2706) and in organic photovoltaic cells (M. T.
- OSC materials that show good electronic properties, especially high charge carrier mobility, and good processibilty, especially a high solubility in organic solvents.
- OSC materials that allow improved charge injection into the semiconducting layer from the source-drain electrodes.
- OFETs to be applied in OTFT driving backplanes for selected display technologies, there is a requirement for the OSC materials to exhibit improved thermal robustness in order for compatability with annealing processes used in manufacturing.
- OFET devices comprising the new compounds as semiconductors show good mobility and on/off ratio values, and can easily be prepared using solution deposition fabrication methods and printing techniques.
- the invention relates to compounds of formula I
- the invention further relates to a formulation comprising one or more compounds of formula I and one or more solvents, preferably selected from organic solvents.
- the invention further relates to an organic semiconducting formulation comprising one or more compounds of formula I, one or more organic binders, or precursors thereof, preferably having a permittivity E at 1,000 Hz of 3.3 or less, and optionally one or more solvents.
- the invention further relates to the use of compounds and formulations according to the present invention as charge transport, semiconducting, electrically conducting, photoconducting or light emitting material in an optical, electrooptical, electronic, electroluminescent or photoluminescent components or devices.
- the invention further relates to the use of compounds and formulations according to the present invention as charge transport, semiconducting, electrically conducting, photoconducting or light emitting material in optical, electrooptical, electronic, electroluminescent or photoluminescent components or devices.
- the invention further relates to a charge transport, semiconducting, electrically conducting, photoconducting or light emitting material or component comprising one or more compounds or formulations according to the present invention.
- the invention further relates to an optical, electrooptical or electronic component or device comprising one or more compounds, formulations, components or materials according to the present invention.
- the optical, electrooptical, electronic electroluminescent and photoluminescent components or devices include, without limitation, organic field effect transistors (OFET), thin film transistors (TFT), integrated circuits (IC), logic circuits, capacitors, radio frequency identification (RFID) tags, devices or components, organic light emitting diodes (OLED), organic light emitting transistors (OLET), flat panel displays, backlights of displays, organic photovoltaic devices (OPV), solar cells, laser diodes, photoconductors, photodetectors, electrophotographic devices, electrophotographic recording devices, organic memory devices, sensor devices, charge injection layers, charge transport layers or interlayers in polymer light emitting diodes (PLEDs), organic plasmon-emitting diodes (OPEDs), Schottky diodes, planarising layers, antistatic films, polymer electrolyte membranes (PEM), conducting substrates, conducting patterns, electrode materials in batteries, alignment layers, biosensors, biochips, security markings, security devices, and components or devices for detecting and discrimin
- the compounds of the present invention are easy to synthesize and exhibit several advantageous properties, like a high charge carrier mobility, a high melting point, a high solubility in organic solvents, a good processability for the device manufacture process, a high oxidative stability and a long lifetime in electronic devices. In addition, they show the following advantageous properties:
- HOMO (eV) LUMO (eV) R H ⁇ 7.59 ⁇ 1.59 ⁇ 7.60 ⁇ 1.72 ⁇ 7.62 ⁇ 1.80 ii) Due to the low single-bond torsional potential in 2,2′-bithiophenes, incorporating five-membered heteroaryls onto the ADT terminals is expected to create co-planar conjugated molecules in the solid state. The co-planarity has been proven by the single crystal X-ray structural analysis of one of the examples of the present invention.
- the extended conjugation length of the molecules combined with solublising groups of matching sizes on the perpendicular direction (like R 1 and R 2 in formula I), increase the intermolecular ⁇ - ⁇ overlap by adopting the face-to-face arrangement in the crystalline state and hence enhance the charge mobility by maximizing electronic coupling between adjacent molecules.
- iii) The low single-bond torsional potential in 2,2′-bithiophenes as described above enables essential free-rotation of the terminal heteroaryl groups in the solution states.
- these new molecules will be expected to have higher solubilities compared with the fused ring analogues of similar lengths.
- Good solubility of organic semi-conducting materials is of crucial importance to solution processing via mass-production printing techniques such as ink-jet printing.
- Some of the examples of this invention possess solubilities >1 wt. % in halogenated hydrocarbons, alkylated benzenes, THF and oligo(ethylene glycol) dialkyl ethers.
- An additional benefit gained by the enhanced conjugation length of the new molecules is that the melting temperature increases. This is a direct result of the increased intermolecular ⁇ - ⁇ interactions, hence increased lattice energy in the crystalline states of conjugated molecules. Differential scanning calorimetry measurements show that most of the crystalline solids in this invention do not melt under 300° C. Morphological stability of the thin crystalline films of semiconducting materials is essential when any annealing process is required during device production, and when localised spot temperatures may rise in working devices.
- the heteroacenes of the present invention are usually prepared as a mixture of isomers.
- the compounds of the present invention include both the mixture of these isomers and the pure isomers.
- the pure isomers may be obtained from the mixture of isomers for example by methods known to those skilled in the art, including but not limited to high-performance liquid chromatography (HPLC).
- HPLC high-performance liquid chromatography
- R 1 and R 2 in formula I are preferably identical groups.
- R 1 and/or R 2 denote —C ⁇ C—R 3 , wherein R 3 is an optionally substituted silyl or germyl group, or an aryl or heteroaryl group with 1 to 20 ring atoms which is unsubstituted or substituted by one or more groups L as defined above.
- R 3 or L is an optionally substituted silyl or germyl group, it is preferably selected of the formula II -AR′R′′R′′′ II wherein
- R′, R′′ and R′′′ are each independently selected from optionally substituted and straight-chain, branched or cyclic alkyl or alkoxy having 1 to 10 C atoms, which is for example methyl, ethyl, n-propyl, isopropyl, cyclopropyl, 2,3-dimethylcyclopropyl, 2,2,3,3-tetramethylcyclopropyl, cyclobutyl, cyclopentyl, methoxy or ethoxy, optionally substituted and straight-chain, branched or cyclic alkenyl, alkynyl or alkylcarbonyl having 2 to 12 C atoms, which is for example allyl, isopropenyl, 2-but-1-enyl, cis-2-but-2-enyl, 3-but-1-enyl, propynyl or acetyl, optionally substituted aryl, heteroaryl, arylalkyl or heteroarylalkyl
- silyl or germyl group of formula II wherein one or more of R′, R′′ and R′′′ together with the Si or Ge atom form a cyclic group, preferably having 2 to 8 C atoms.
- Ar 1 and/or Ar 2 in formula I denote an aromatic or heteroaromatic group with 4 to 25 ring atoms, which is mono- or polycyclic, i.e. it may also contain two or more individual rings that are connected to each other via single bonds, or contain two or more fused rings, and wherein each ring is unsubstituted or substituted with one or more groups L as defined above.
- Ar 1 and/or Ar 2 in formula I are selected from the group consisting of furan, thiophene, selenophene, N-pyrrole, pyrimidine, thiazole, thiadiazole, oxazole, oxadiazole, selenazole, and bi-, tri- or tetracyclic groups containing one or more of the aforementioned rings and optionally one or more benzene rings, wherein the individual rings are connected by single bonds or fused with each other, and wherein all the aforementioned groups are unsubstituted, or substituted with one or more groups L as defined above.
- Preferred aryl or heteraryl groups containing fused rings are for example thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene, selenopheno[3,2-b]selenophene-2,5-diyl, selenopheno[2,3-b]selenophene-2,5-diyl, selenopheno[3,2-b]thiophene-2,5-diyl, selenopheno[2,3-b]thiophene-2,5-diyl, benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl, 2,2-dithiophene, 2,2-diselenophene, dithieno[3,2-b:2′,3′-d]silole-5,5-diyl, 4H-cyclopenta[2,1-b:3,4-b′]d
- Ar 1 and/or Ar 2 in formula I are selected from the group consisting of the following moieties:
- X has one of the meanings of L given above, and is preferably H, F, Cl, Br, I, CN, COOH, COOR 0 , CONR 0 R 00 , or alkyl or perfluoroalkyl having 1 to 20 C atoms, o is 1, 2, 3 or 4, and the dashed line denotes the linkage to the adjacent ring in formula I.
- R′, R′′ and R′′′ are as defined in formula II.
- an alkyl group or an alkoxy group i.e. alkyl where the terminal CH 2 group is replaced by —O—
- alkenyl group i.e. alkyl wherein one or more CH 2 groups are replaced by —CH ⁇ CH— can be straight-chain or branched. It is preferably straight-chain, has 2 to 10 C atoms and accordingly is preferably vinyl, prop-1-, or prop-2-enyl, but-1-, 2- or but-3-enyl, pent-1-, 2-, 3- or pent-4-enyl, hex-1-, 2-, 3-, 4- or hex-5-enyl, hept-1-, 2-, 3-, 4-, 5- or hept-6-enyl, oct-1-, 2-, 3-, 4-, 5-, 6- or oct-7-enyl, non-1-, 2-, 3-, 4-, 5-, 6-, 7- or non-8-enyl, dec-1-, 2-, 3-, 4-, 5-, 6-, 7-, 8- or dec-9-enyl.
- alkenyl groups are C 2 -C 7 -1E-alkenyl, C 4 -C 7 -3E-alkenyl, C 5 -C 7 -4-alkenyl, C 6 -C 7 -5-alkenyl and C 7 -6-alkenyl, in particular C 2 -C 7 -1E-alkenyl, C 4 -C 7 -3E-alkenyl and C 5 -C 7 -4-alkenyl.
- alkenyl groups are vinyl, 1E-propenyl, 1E-butenyl, 1E-pentenyl, 1E-hexenyl, 1E-heptenyl, 3-butenyl, 3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl, 4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groups having up to 5 C atoms are generally preferred.
- these radicals are preferably neighboured. Accordingly these radicals together form a carbonyloxy group —CO—O— or an oxycarbonyl group —O—CO—.
- this group is straight-chain and has 2 to 6 C atoms.
- An alkyl group wherein two or more CH 2 groups are replaced by —O— and/or —COO— can be straight-chain or branched. It is preferably straight-chain and has 3 to 12 C atoms. Accordingly it is preferably bis-carboxy-methyl, 2,2-bis-carboxy-ethyl, 3,3-bis-carboxy-propyl, 4,4-bis-carboxy-butyl, 5,5-bis-carboxy-pentyl, 6,6-bis-carboxy-hexyl, 7,7-bis-carboxy-heptyl, 8,8-bis-carboxy-octyl, 9,9-bis-carboxy-nonyl, 10,10-bis-carboxy-decyl, bis-(methoxycarbonyl)-methyl, 2,2-bis-(methoxycarbonyl)-ethyl, 3,3-bis-(methoxycarbonyl)-propyl, 4,4-bis-(methoxycarbonyl
- R 1 , R 2 , R′, R′′ and R′′′ can be an achiral or a chiral group.
- CY 0 ⁇ CY 00 — is preferably —CH ⁇ CH—, —CF ⁇ CF— or —CH ⁇ C(CN)—.
- Halogen is F, Cl, Br or I, preferably F, Cl or Br.
- the compounds of formula I may also be substituted with a polymerisable or reactive group, which is optionally protected during the process of forming the polymer.
- Particular preferred compounds of this type are those of formula I that contain one or more substituents L which denote P-Sp, wherein P is a polymerisable or reactive group and Sp is a spacer group or a single bond.
- P-Sp substituents L which denote P-Sp, wherein P is a polymerisable or reactive group and Sp is a spacer group or a single bond.
- These compounds are particularly useful as semiconductors or charge transport materials, as they can be crosslinked via the groups P, for example by polymerisation in situ, during or after processing the polymer into a thin film for a semiconductor component, to yield crosslinked polymer films with high charge carrier mobility and high thermal, mechanical and chemical stability.
- the polymerisable or reactive group P is selected from CH 2 ⁇ CW 1 —COO—, CH 2 ⁇ CW 1 —CO—
- P is a protected derivative of these groups which is non-reactive under the conditions described for the process according to the present invention.
- Suitable protective groups are known to the ordinary expert and described in the literature, for example in Green, “Protective Groups in Organic Synthesis”, John Wiley and Sons, New York (1981), like for example acetals or ketals.
- Especially preferred groups P are CH 2 ⁇ CH—COO—, CH 2 ⁇ C(CH 3 )—COO—, CH 2 ⁇ CH—, CH 2 ⁇ CH—O—, (CH 2 ⁇ CH) 2 CH—OCO—, (CH 2 ⁇ CH) 2 CH—O—,
- spacer group is known in prior art and suitable spacer groups Sp are known to the ordinary expert (see e.g. Pure Appl. Chem. 2001, 73(5), 888.
- the spacer group Sp is preferably of formula Sp′-X′, such that P-Sp- is P-Sp′-X′—, wherein
- Typical groups Sp′ are, for example, —(CH 2 ) p —, —(CH 2 CH 2 O) q —CH 2 CH 2 —, —CH 2 CH 2 —S—CH 2 CH 2 — or —CH 2 CH 2 —NH—CH 2 CH 2 — or —(SiR 0 R 00 —O) p —, with p being an integer from 2 to 12, q being an integer from 1 to 3 and R 0 and R 00 having the meanings given above.
- Preferred groups Sp′ are ethylene, propylene, butylene, pentylene, hexylene, heptylene, octylene, nonylene, decylene, undecylene, dodecylene, octadecylene, ethyleneoxyethylene, methyleneoxybutylene, ethylene-thioethylene, ethylene-N-methyl-iminoethylene, 1-methylalkylene, ethenylene, propenylene and butenylene for example.
- the compounds of formula I can be synthesized according to or in analogy to methods that are known to the skilled person and are described in the literature. Other methods of preparation can be taken from the examples. Especially preferred and suitable synthesis methods are further described below.
- diacetal A is iodinated by treating with n-BuLi and elemental iodine to yield the iododiacetal B in good yield.
- the diacetal is deprotected to the corresponding the dialdehyde C, which is condensed with 1,4-cyclohexanedione to yield the diiodoanthradithiophene quinone D.
- the quinone reacts with lithium trialkysilylacetylide to form the dihydroxy derivative E.
- Stille or Suzuki coupling of E with the corresponding thienyl building blocks yields F, which aromatises to the dithienyl anthra[2,3-b:7,6-b]dithiophenes.
- the invention further relates to a formulation comprising one or more compounds of formula I and one or more solvents, preferably selected from organic solvents.
- Preferred solvents are aliphatic hydrocarbons, chlorinated hydrocarbons, aromatic hydrocarbons, ketones, ethers and mixtures thereof. Additional solvents which can be used include 1,2,4-trimethylbenzene, 1,2,3,4-tetramethyl benzene, pentylbenzene, mesitylene, cumene, cymene, cyclohexylbenzene, diethylbenzene, tetralin, decalin, 2,6-lutidine, 2-fluoro-m-xylene, 3-fluoro-o-xylene, 2-chlorobenzotrifluoride, dimethylformamide, 2-chloro-6-fluorotoluene, 2-fluoroanisole, anisole, 2,3-dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole, 3-trifluoro-methylanisole, 2-methylanisole, phenetol, 4-methylansiole, 3-methylanisole, 4-fluoro-3-
- the invention further relates to an organic semiconducting formulation comprising one or more compounds of formula I, one or more organic binders, or precursors thereof, preferably having a permittivity E at 1,000 Hz of 3.3 or less, and optionally one or more solvents.
- the binder for example poly( ⁇ -methylstyrene) and deposited (for example by spin coating), to form an organic semiconducting layer yielding a high charge mobility.
- a semiconducting layer formed thereby exhibits excellent film forming characteristics and is particularly stable.
- an organic semiconducting layer formulation of high mobility is obtained by combining a compound of formula I with a binder
- the resulting formulation leads to several advantages.
- the compounds of formula I are soluble they may be deposited in a liquid form, for example from solution.
- the binder With the additional use of the binder the formulation can be coated onto a large area in a highly uniform manner.
- a binder is used in the formulation it is possible to control the properties of the formulation to adjust to printing processes, for example viscosity, solid content, surface tension.
- a binder in the formulation fills in volume between crystalline grains otherwise being void, making the organic semiconducting layer less sensitive to air and moisture.
- layers formed according to the process of the present invention show very good stability in OFET devices in air.
- the invention also provides an organic semiconducting layer which comprises the organic semiconducting layer formulation.
- the invention further provides a process for preparing an organic semiconducting layer, said process comprising the following steps:
- the invention additionally provides an electronic device comprising the said organic semiconducting layer.
- the electronic device may include, without limitation, an organic field effect transistor (OFET), organic light emitting diode (OLED), photodetector, sensor, logic circuit, memory element, capacitor or photovoltaic (PV) cell.
- OFET organic field effect transistor
- OLED organic light emitting diode
- PV photovoltaic
- the active semiconductor channel between the drain and source in an OFET may comprise the layer of the invention.
- a charge (hole or electron) injection or transport layer in an OLED device may comprise the layer of the invention.
- the formulations according to the present invention and layers formed therefrom have particular utility in OFETs especially in relation to the preferred embodiments described herein.
- the semiconducting compound of formula I preferably has a charge carrier mobility, ⁇ , of more than 0.001 cm 2 V ⁇ 1 s ⁇ 1 , very preferably of more than 0.01 cm 2 V ⁇ 1 s ⁇ 1 , especially preferably of more than 0.1 cm 2 V ⁇ 1 s ⁇ 1 and most preferably of more than 0.5 cm 2 V ⁇ 1 s ⁇ 1 .
- the binder which is typically a polymer, may comprise either an insulating binder or a semiconducting binder, or mixtures thereof may be referred to herein as the organic binder, the polymeric binder or simply the binder.
- Preferred binders according to the present invention are materials of low permittivity, that is, those having a permittivity E at 1,000 Hz of 3.3 or less.
- the organic binder preferably has a permittivity E at 1,000 Hz of 3.0 or less, more preferably 2.9 or less.
- the organic binder has a permittivity E at 1,000 Hz of 1.7 or more. It is especially preferred that the permittivity of the binder is in the range from 2.0 to 2.9.
- the use of binders with a permittivity E of greater than 3.3 at 1,000 Hz may lead to a reduction in the OSC layer mobility in an electronic device, for example an OFET.
- high permittivity binders could also result in increased current hysteresis of the device, which is undesirable.
- a suitable organic binder is polystyrene.
- suitable binders are disclosed for example in US 2007/0102696 A1. Especially suitable and preferred binders are described in the following.
- the organic binder is one in which at least 95%, more preferably at least 98% and especially all of the atoms consist of hydrogen, fluorine and carbon atoms.
- the binder normally contains conjugated bonds, especially conjugated double bonds and/or aromatic rings.
- the binder should preferably be capable of forming a film, more preferably a flexible film.
- Polymers of styrene and ⁇ -methyl styrene, for example copolymers including styrene, ⁇ -methylstyrene and butadiene may suitably be used.
- Binders of low permittivity of use in the present invention have few permanent dipoles which could otherwise lead to random fluctuations in molecular site energies.
- the permittivity c (dielectric constant) can be determined by the ASTM D150 test method.
- binders are used which have solubility parameters with low polar and hydrogen bonding contributions as materials of this type have low permanent dipoles.
- solubility parameters ‘Hansen parameter’
- Table 1 A preferred range for the solubility parameters (‘Hansen parameter’) of a binder for use in accordance with the present invention is provided in Table 1 below.
- the three dimensional solubility parameters listed above include: dispersive ( ⁇ d ), polar ( ⁇ p ) and hydrogen bonding ( ⁇ h ) components (C. M. Hansen, Ind. Eng. and Chem., Prod. Res. and Devl., 9, No 3, p 282., 1970). These parameters may be determined empirically or calculated from known molar group contributions as described in Handbook of Solubility Parameters and Other Cohesion Parameters ed. A. F. M. Barton, CRC Press, 1991. The solubility parameters of many known polymers are also listed in this publication.
- the permittivity of the binder has little dependence on frequency. This is typical of non-polar materials.
- Polymers and/or copolymers can be chosen as the binder by the permittivity of their substituent groups.
- a list of suitable and preferred low polarity binders is given (without limiting to these examples) in Table 2:
- Binder permittivity ( ⁇ ) polystyrene 2.5 poly( ⁇ -methylstyrene) 2.6 poly( ⁇ -vinylnaphtalene) 2.6 poly(vinyltoluene) 2.6 polyethylene 2.2-2.3 cis-polybutadiene 2.0 polypropylene 2.2 poly(4-methyl-1-pentene) 2.1 poly (4-methylstyrene) 2.7 poly(chorotrifluoroethylene) 2.3-2.8 poly(2-methyl-1,3-butadiene) 2.4 poly(p-xylylene) 2.6 poly( ⁇ - ⁇ - ⁇ ′- ⁇ ′ tetrafluoro-p-xylylene) 2.4 poly[1,1-(2-methyl propane)bis(4-phenyl)carbonate] 2.3 poly(cyclohexyl methacrylate) 2.5 poly(chlorostyrene) 2.6 poly(2,6-dimethyl-1,4-phenylene ether) 2.6 polyisobutylene
- binders are poly(1,3-butadiene) and polyphenylene.
- formulations wherein the binder is selected from poly- ⁇ -methyl styrene, polystyrene and polytriarylamine or any copolymers of these, and the solvent is selected from xylene(s), toluene, tetralin and cyclohexanone.
- Copolymers containing the repeat units of the above polymers are also suitable as binders. Copolymers offer the possibility of improving compatibility with the compounds of formula I, modifying the morphology and/or the glass transition temperature of the final layer composition. It will be appreciated that in the above table certain materials are insoluble in commonly used solvents for preparing the layer. In these cases analogues can be used as copolymers. Some examples of copolymers are given in Table 3 (without limiting to these examples). Both random or block copolymers can be used. It is also possible to add more polar monomer components as long as the overall composition remains low in polarity.
- Binder permittivity poly(ethylene/tetrafluoroethylene) 2.6 poly(ethylene/chlorotrifluoroethylene) 2.3 fluorinated ethylene/propylene copolymer 2-2.5 polystyrene-co- ⁇ -methylstyrene 2.5-2.6 ethylene/ethyl acrylate copolymer 2.8 poly(styrene/10% butadiene) 2.6 poly(styrene/15% butadiene) 2.6 poly(styrene/2,4 dimethylstyrene) 2.5 Topas TM (all grades) 2.2-2.3
- copolymers may include: branched or non-branched polystyrene-block-polybutadiene, polystyrene-block(polyethylene-ran-butylene)-block-polystyrene, polystyrene-block-polybutadiene-block-polystyrene, polystyrene-(ethylene-propylene)-diblock-copolymers (e.g. KRATON®-G1701E, Shell), poly(propylene-co-ethylene) and poly(styrene-co-methylmethacrylate).
- polystyrene-block-polybutadiene polystyrene-block(polyethylene-ran-butylene)-block-polystyrene, polystyrene-block-polybutadiene-block-polystyrene, polystyrene-(ethylene-propylene)-diblock-copolymers (e.g
- Preferred insulating binders for use in the organic semiconductor layer formulation according to the present invention are poly( ⁇ -methylstyrene), polyvinylcinnamate, poly(4-vinylbiphenyl), poly(4-methylstyrene), and TopasTM 8007 (linear olefin, cyclo-olefin(norbornene) copolymer available from Ticona, Germany). Most preferred insulating binders are poly( ⁇ -methylstyrene), polyvinylcinnamate and poly(4-vinylbiphenyl).
- the binder can also be selected from crosslinkable binders, like e.g. acrylates, epoxies, vinylethers, thiolenes etc., preferably having a sufficiently low permittivity, very preferably of 3.3 or less.
- the binder can also be mesogenic or liquid crystalline.
- the organic binder may itself be a semiconductor, in which case it will be referred to herein as a semiconducting binder.
- the semiconducting binder is still preferably a binder of low permittivity as herein defined.
- Semiconducting binders for use in the present invention preferably have a number average molecular weight (M n ) of at least 1500-2000, more preferably at least 3000, even more preferably at least 4000 and most preferably at least 5000.
- the semiconducting binder preferably has a charge carrier mobility, ⁇ , of at least 10 ⁇ 5 cm 2 V ⁇ 1 s ⁇ 1 , more preferably at least 10 ⁇ 4 cm 2 V ⁇ 1 s ⁇ 1 .
- a preferred class of semiconducting binder is a polymer as disclosed in U.S. Pat. No. 6,630,566, preferably an oligomer or polymer having repeat units of formula 1:
- a mononuclear aromatic group has only one aromatic ring, for example phenyl or phenylene.
- a polynuclear aromatic group has two or more aromatic rings which may be fused (for example napthyl or naphthylene), individually covalently linked (for example biphenyl) and/or a combination of both fused and individually linked aromatic rings.
- each Ar 11 , Ar 22 and Ar 33 is an aromatic group which is substantially conjugated over substantially the whole group.
- the semiconducting binder polymer may be a homopolymer or copolymer (including a block-copolymer) of the general formula 2: A (c) B (d) . . . Z (z) 2
- Suitable and preferred monomer units A, B, . . . Z include units of formula 1 above and of formulae 3 to 8 given below (wherein m is as defined in formula 1:
- R a , R b and Y are as defined in formulae 3 and 4;
- R a , R b and Y are as defined in formulae 3 and 4,
- R a and R b are as defined in formula 3;
- R a , R b , R g and R h independently of each other have one of the meanings of R a and R b in formula 3.
- the polymers may be terminated by any terminal group, that is any end-capping or leaving group, including H.
- each monomer A, B, . . . Z may be a conjugated oligomer or polymer comprising a number, for example 2 to 50, of the units of formulae 3-8.
- the semiconducting binder preferably includes: arylamine, fluorene, thiophene, spiro bifluorene and/or optionally substituted aryl (for example phenylene) groups, more preferably arylamine, most preferably triarylamine groups.
- aryl for example phenylene
- the aforementioned groups may be linked by further conjugating groups, for example vinylene.
- the semiconducting binder comprises a polymer (either a homo-polymer or copolymer, including block-copolymer) containing one or more of the aforementioned arylamine, fluorene, thiophene and/or optionally substituted aryl groups.
- a preferred semiconducting binder comprises a homo-polymer or copolymer (including block-copolymer) containing arylamine (preferably triarylamine) and/or fluorene units.
- Another preferred semiconducting binder comprises a homo-polymer or co-polymer (including block-copolymer) containing fluorene and/or thiophene units.
- the semiconducting binder may also contain carbazole or stilbene repeat units.
- carbazole or stilbene repeat units For example, polyvinylcarbazole, polystilbene or their copolymers may be used.
- the semiconducting binder may optionally contain DBBDT segments (for example repeat units as described for formula 1 above) to improve compatibility with the soluble compounds of formula.
- Very preferred semiconducting binders for use in the organic semiconductor formulation according to the present invention are poly(9-vinylcarbazole) and PTAA1, a polytriarylamine of the following formula
- the semiconducting binder For application of the semiconducting layer in p-channel FETs, it is desirable that the semiconducting binder should have a higher ionisation potential than the semiconducting compound of formula I, otherwise the binder may form hole traps. In n-channel materials the semiconducting binder should have lower electron affinity than the n-type semiconductor to avoid electron trapping.
- the formulation according to the present invention may be prepared by a process which comprises:
- the binder may be formed in situ by mixing or dissolving a compound of formula I in a precursor of a binder, for example a liquid monomer, oligomer or crosslinkable polymer, optionally in the presence of a solvent, and depositing the mixture or solution, for example by dipping, spraying, painting or printing it, on a substrate to form a liquid layer and then curing the liquid monomer, oligomer or crosslinkable polymer, for example by exposure to radiation, heat or electron beams, to produce a solid layer.
- a precursor of a binder for example a liquid monomer, oligomer or crosslinkable polymer, optionally in the presence of a solvent
- depositing the mixture or solution for example by dipping, spraying, painting or printing it, on a substrate to form a liquid layer and then curing the liquid monomer, oligomer or crosslinkable polymer, for example by exposure to radiation, heat or electron beams, to produce a solid layer.
- a preformed binder it may be dissolved together with the compound of formula I in a suitable solvent, and the solution deposited for example by dipping, spraying, painting or printing it on a substrate to form a liquid layer and then removing the solvent to leave a solid layer.
- solvents are chosen which are able to dissolve both the binder and the compound of formula I, and which upon evaporation from the solution blend give a coherent defect free layer.
- the formulation may also comprise two or more compounds of formula I and/or two or more binders or binder precursors, and that the process for preparing the formulation may be applied to such formulations.
- suitable and preferred organic solvents include, without limitation, dichloromethane, trichloromethane, monochlorobenzene, o-dichlorobenzene, tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, dimethylformamide, dimethylacetamide, dimethylsulfoxide, tetralin, decalin, indane and/or mixtures thereof.
- Especially preferred solvents for use in the formulation according to the present invention, with insulating or semiconducting binders and mixtures thereof, are xylene(s), toluene, tetralin and o-dichlorobenzene.
- the level of the solids content in the organic semiconducting layer formulation is also a factor in achieving improved mobility values for electronic devices such as OFETs.
- the solids content of the formulation is commonly expressed as follows:
- the solids content of the formulation is preferably 0.1 to 10% by weight, more preferably 0.5 to 5% by weight.
- the compounds according to the present invention can also be used in mixtures or blends, for example together with other compounds having charge-transport, semiconducting, electrically conducting, photoconducting and/or light emitting semiconducting properties.
- another aspect of the invention relates to a mixture or blend comprising one or more compounds of formula I and one or more further compounds having one or more of the above-mentioned properties.
- These mixtures can be prepared by conventional methods that are described in prior art and known to the skilled person. Typically the compounds are mixed with each other or dissolved in suitable solvents and the solutions combined.
- Patterning of the layer of the invention may be carried out by photolithography or electron beam lithography.
- Selected formulations of the present invention may be applied to prefabricated device substrates by ink jet printing or microdispensing.
- industrial piezoelectric print heads such as but not limited to those supplied by Aprion, Hitachi-Koki, InkJet Technology, On Target Technology, Picojet, Spectra, Trident, Xaar may be used to apply the organic semiconductor layer to a substrate.
- semi-industrial heads such as those manufactured by Brother, Epson, Konica, Seiko Instruments Toshiba TEC or single nozzle microdispensers such as those produced by Microdrop and Microfab may be used.
- the mixture of the compound of formula I and the binder should be first dissolved in a suitable solvent.
- Solvents must fulfil the requirements stated above and must not have any detrimental effect on the chosen print head.
- solvents should have boiling points >100° C., preferably >140° C. and more preferably >150° C. in order to prevent operability problems caused by the solution drying out inside the print head.
- Suitable solvents include substituted and non-substituted xylene derivatives, di-C 1-2 -alkyl formamide, substituted and non-substituted anisoles and other phenol-ether derivatives, substituted heterocycles such as substituted pyridines, pyrazines, pyrimidines, pyrrolidinones, substituted and non-substituted N,N-di-C 1-2 -alkylanilines and other fluorinated or chlorinated aromatics.
- a preferred solvent for depositing a formulation according to the present invention by ink jet printing comprises a benzene derivative which has a benzene ring substituted by one or more substituents wherein the total number of carbon atoms among the one or more substituents is at least three.
- the benzene derivative may be substituted with a propyl group or three methyl groups, in either case there being at least three carbon atoms in total.
- Such a solvent enables an ink jet fluid to be formed comprising the solvent with the binder and the compound of formula I which reduces or prevents clogging of the jets and separation of the components during spraying.
- the solvent(s) may include those selected from the following list of examples: dodecylbenzene, 1-methyl-4-tert-butylbenzene, terpineol limonene, isodurene, terpinolene, cymene, diethylbenzene.
- the solvent may be a solvent mixture, that is a combination of two or more solvents, each solvent preferably having a boiling point >100° C., more preferably >140° C. Such solvent(s) also enhance film formation in the layer deposited and reduce defects in the layer.
- the ink jet fluid (that is mixture of solvent, binder and semiconducting compound) preferably has a viscosity at 20° C. of 1 to 100 mPa ⁇ s, more preferably 1 to 50 mPa ⁇ s and most preferably 1 to 30 mPa ⁇ s.
- the use of the binder in the present invention allows tuning the viscosity of the coating solution, to meet the requirements of particular print heads.
- the exact thickness of the layer will depend, for example, upon the requirements of the electronic device in which the layer is used. For use in an OFET or OLED, the layer thickness may typically be 500 nm or less.
- the semiconducting layer of the present invention there may be used two or more different compounds of formula I. Additionally or alternatively, in the semiconducting layer there may be used two or more organic binders of the present invention.
- the invention further provides a process for preparing the organic semiconducting layer which comprises (i) depositing on a substrate a liquid layer of a formulation which comprises one or more compounds of formula I, one or more organic binders or precursors thereof and optionally one or more solvents, and (ii) forming from the liquid layer a solid layer which is the organic semiconducting layer.
- the solid layer may be formed by evaporation of the solvent and/or by reacting the binder resin precursor (if present) to form the binder resin in situ.
- the substrate may include any underlying device layer, electrode or separate substrate such as silicon wafer or polymer substrate for example.
- the binder may be alignable, for example capable of forming a liquid crystalline phase.
- the binder may assist alignment of the compound of formula I, for example such that their aromatic core is preferentially aligned along the direction of charge transport.
- Suitable processes for aligning the binder include those processes used to align polymeric organic semiconductors and are described in prior art, for example in US 2004/0248338 A1.
- the formulation according to the present invention can additionally comprise one or more further components like for example surface-active compounds, lubricating agents, wetting agents, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents, reactive or non-reactive diluents, auxiliaries, colourants, dyes or pigments, furthermore, especially in case crosslinkable binders are used, catalysts, sensitizers, stabilizers, inhibitors, chain-transfer agents or co-reacting monomers.
- further components like for example surface-active compounds, lubricating agents, wetting agents, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents, reactive or non-reactive diluents, auxiliaries, colourants, dyes or pigments, furthermore, especially in case crosslinkable binders are used, catalysts, sensitizers, stabilizers,
- the present invention also provides the use of the semiconducting compound, formulation or layer in an electronic device.
- the formulation may be used as a high mobility semiconducting material in various devices and apparatus.
- the formulation may be used, for example, in the form of a semiconducting layer or film.
- the present invention provides a semiconducting layer for use in an electronic device, the layer comprising the formulation according to the invention.
- the layer or film may be less than about 30 microns.
- the thickness may be less than about 1 micron thick.
- the layer may be deposited, for example on a part of an electronic device, by any of the aforementioned solution coating or printing techniques.
- the compounds and formulations according to the present invention are useful as charge transport, semiconducting, electrically conducting, photoconducting or light mitting materials in optical, electrooptical, electronic, electroluminescent or photoluminescent components or devices.
- Especially preferred devices are OFETs, TFTs, ICs, logic circuits, capacitors, RFID tags, OLEDs, OLETs, OPEDs, OPVs, solar cells, laser diodes, photoconductors, photodetectors, electrophotographic devices, electrophotographic recording devices, organic memory devices, sensor devices, charge injection layers, Schottky diodes, planarising layers, antistatic films, conducting substrates and conducting patterns.
- the compounds of the present invention are typically applied as thin layers or films.
- the compound or formulation may be used as a layer or film, in a field effect transistor (FET) for example as the semiconducting channel, organic light emitting diode (OLED) for example as a hole or electron injection or transport layer or electroluminescent layer, photodetector, chemical detector, photovoltaic cell (PVs), capacitor sensor, logic circuit, display, memory device and the like.
- FET field effect transistor
- OLED organic light emitting diode
- PVs photovoltaic cell
- capacitor sensor logic circuit
- display memory device and the like.
- EP electrophotographic
- the compound or formulation is preferably solution coated to form a layer or film in the aforementioned devices or apparatus to provide advantages in cost and versatility of manufacture.
- the improved charge carrier mobility of the compound or formulation of the present invention enables such devices or apparatus to operate faster and/or more efficiently.
- Especially preferred electronic device are OFETs, OLEDs and OPV devices, in particular bulk heterojunction (BHJ) OPV devices.
- the active semiconductor channel between the drain and source may comprise the layer of the invention.
- the charge (hole or electron) injection or transport layer may comprise the layer of the invention.
- the polymer according to the present invention is preferably used in a formulation that comprises or contains, more preferably consists essentially of, very preferably exclusively of, a p-type (electron donor) semiconductor and an n-type (electron acceptor) semiconductor.
- the p-type semiconductor is constituted by a compound according to the present invention.
- the n-type semiconductor can be an inorganic material such as zinc oxide or cadmium selenide, or an organic material such as a fullerene derivate, for example (6,6)-phenyl-butyric acid methyl ester derivatized methano C 60 fullerene, also known as “PCBM” or “C 60 PCBM”, as disclosed for example in G. Yu, J. Gao, J. C. Hummelen, F. Wudl, A. J. Heeger, Science 1995, 270, 1789 and having the structure shown below, or an structural analogous compound with e.g. a C 70 fullerene group (C 70 PCBM), or a polymer (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).
- a preferred material of this type is a blend or mixture of an acene compound according to the present invention with a C 60 or C 70 fullerene or modified fullerene like PCBM.
- the ratio acene:fullerene is from 2:1 to 1:2 by weight, more preferably from 1.2:1 to 1:1.2 by weight, most preferably 1:1 by weight.
- an optional annealing step may be necessary to optimize blend morpohology and consequently OPV device performance.
- the OPV device can for example be of any type known from the literature [see e.g. Waldauf et al., Appl. Phys. Lett., 2006, 89, 233517].
- a first preferred OPV device comprises:
- a second preferred OPV device is an inverted OPV device and comprises:
- the p-type and n-type semiconductor materials are preferably selected from the materials, like the p-type compound/fullerene systems, as described above. If the bilayer is a blend an optional annealing step may be necessary to optimize device performance.
- the compound, formulation and layer of the present invention are also suitable for use in an OFET as the semiconducting channel.
- the invention also provides an OFET comprising a gate electrode, an insulating (or gate insulator) layer, a source electrode, a drain electrode and an organic semiconducting channel connecting the source and drain electrodes, wherein the organic semiconducting channel comprises a compound, formulation or organic semiconducting layer according to the present invention.
- an OFET comprising a gate electrode, an insulating (or gate insulator) layer, a source electrode, a drain electrode and an organic semiconducting channel connecting the source and drain electrodes, wherein the organic semiconducting channel comprises a compound, formulation or organic semiconducting layer according to the present invention.
- Other features of the OFET are well known to those skilled in the art.
- OFETs where an OSC material is arranged as a thin film between a gate dielectric and a drain and a source electrode are generally known, and are described for example in U.S. Pat. No. 5,892,244, U.S. Pat. No. 5,998,804, U.S. Pat. No. 6,723,394 and in the references cited in the background section. Due to the advantages, like low cost production using the solubility properties of the compounds according to the invention and thus the processibility of large surfaces, preferred applications of these FETs are such as integrated circuitry, TFT displays and security applications.
- the gate, source and drain electrodes and the insulating and semiconducting layer in the OFET device may be arranged in any sequence, provided that the source and drain electrode are separated from the gate electrode by the insulating layer, the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconducting layer.
- An OFET device preferably comprises:
- the OFET device can be a top gate device or a bottom gate device. Suitable structures and manufacturing methods of an OFET device are known to the skilled in the art and are described in the literature, for example in US 2007/0102696 A1.
- the gate insulator layer preferably comprises a fluoropolymer, like e.g. the commercially available Cytop 809M® or Cytop 107M® (from Asahi Glass).
- a fluoropolymer like e.g. the commercially available Cytop 809M® or Cytop 107M® (from Asahi Glass).
- the gate insulator layer is deposited, e.g. by spin-coating, doctor blading, wire bar coating, spray or dip coating or other known methods, from a formulation comprising an insulator material and one or more solvents with one or more fluoro atoms (fluorosolvents), preferably a perfluorosolvent.
- fluorosolvents fluoro atoms
- a suitable perfluorosolvent is e.g. FC75® (available from Acros, catalogue number 12380).
- fluoropolymers and fluorosolvents are known in prior art, like for example the perfluoropolymers Teflon AF®, 1600 or 2400 (from DuPont) or Fluoropel® (from Cytonix) or the perfluorosolvent FC 43® (Acros, No. 12377).
- organic dielectric materials having a low permittivity (or dielectric constant) from 1.0 to 5.0, very preferably from 1.8 to 4.0 (“low k materials”), as disclosed for example in US 2007/0102696 A1 or U.S. Pat. No. 7,095,044.
- OFETs and other devices with semiconducting materials according to the present invention can be used for RFID tags or security markings to authenticate and prevent counterfeiting of documents of value like banknotes, credit cards or ID cards, national ID documents, licenses or any product with monetry value, like stamps, tickets, shares, cheques etc.
- the materials according to the invention can be used in OLEDs, e.g. as the active display material in a flat panel display applications, or as backlight of a flat panel display like e.g. a liquid crystal display.
- OLEDs are realized using multilayer structures.
- An emission layer is generally sandwiched between one or more electron-transport and/or hole-transport layers.
- the inventive compounds, materials and films may be employed in one or more of the charge transport layers and/or in the emission layer, corresponding to their electrical and/or optical properties.
- the compounds, materials and films according to the invention show electroluminescent properties themselves or comprise electroluminescent groups or compounds.
- the selection, characterization as well as the processing of suitable monomeric, oligomeric and polymeric compounds or materials for the use in OLEDs is generally known by a person skilled in the art, see, e.g., Müller, Synth. Metals, 2000, 111-112, 31, Alcala, J. Appl. Phys., 2000, 88, 7124 and the literature cited therein.
- the materials according to this invention may be employed as materials of light sources, e.g. in display devices, as described in EP 0 889 350 A1 or by C. Weder et al., et al., Science, 1998, 279, 835-837.
- a further aspect of the invention relates to both the oxidised and reduced form of the compounds according to this invention. Either loss or gain of electrons results in formation of a highly delocalised ionic form, which is of high conductivity. This can occur on exposure to common dopants. Suitable dopants and methods of doping are known to those skilled in the art, e.g. from EP 0 528 662, U.S. Pat. No. 5,198,153 or WO 96/21659.
- the doping process typically implies treatment of the semiconductor material with an oxidating or reducing agent in a redox reaction to form delocalised ionic centres in the material, with the corresponding counterions derived from the applied dopants.
- Suitable doping methods comprise for example exposure to a doping vapor in the atmospheric pressure or at a reduced pressure, electrochemical doping in a solution containing a dopant, bringing a dopant into contact with the semiconductor material to be thermally diffused, and ion-implantantion of the dopant into the semiconductor material.
- suitable dopants are for example halogens (e.g., I 2 , Cl 2 , Br 2 , ICl, ICl 3 , IBr and IF), Lewis acids (e.g., PF 5 , AsF 5 , SbF 5 , BF 3 , BCl 3 , SbCl 5 , BBr 3 and SO 3 ), protonic acids, organic acids, or amino acids (e.g., HF, HCl, HNO 3 , H 2 SO 4 , HClO 4 , FSO 3 H and ClSO 3 H), transition metal compounds (e.g., FeCl 3 , FeOCl, Fe(ClO 4 ) 3 , Fe(4-CH 3 C 6 H 4 SO 3 ) 3 , TiCl 4 , ZrCl 4 , HfCl 4 , NbF 5 , NbCl 5 , TaCl 5 , MoF 5 , MoCl 5 , WF 5
- halogens
- examples of dopants are cations (e.g., H + , Li + , Na + , K + , Rb + and Cs + ), alkali metals (e.g., Li, Na, K, Rb, and Cs), alkaline-earth metals (e.g., Ca, Sr, and Ba), O 2 , XeOF 4 , (NO 2 ) + (SbF 6 ⁇ ), (NO 2 + ) (SbCl 6 ⁇ ), (NO 2 + ) (BF 4 ⁇ ), AgClO 4 , H 2 IrCl 6 , La(NO 3 ) 3 .6H 2 O, FSP 2 OOSO 2 F, Eu, acetylcholine, R 4 N + , (R is an alkyl group), R 4 P + (R is an alkyl group), R 6 As + (R is an alkyl group), and R 3 S + (R is an alkyl group).
- dopants are c
- the conducting form of the compounds of the present invention can be used as an organic “metal” in applications including, but not limited to, charge injection layers and ITO planarising layers in OLED applications, films for flat panel displays and touch screens, antistatic films, printed conductive substrates, patterns or tracts in electronic applications such as printed circuit boards and condensers.
- the materials according to the present invention can be used alone or together with other materials in or as alignment layers in LCD or OLED devices, as described for example in US 2003/0021913.
- the use of charge transport compounds according to the present invention can increase the electrical conductivity of the alignment layer.
- this increased electrical conductivity can reduce adverse residual dc effects in the switchable LCD cell and suppress image sticking or, for example in ferroelectric LCDs, reduce the residual charge produced by the switching of the spontaneous polarisation charge of the ferroelectric LCs.
- this increased electrical conductivity can enhance the electroluminescence of the light emitting material.
- the compounds or materials according to the present invention having mesogenic or liquid crystalline properties can form oriented anisotropic films as described above, which are especially useful as alignment layers to induce or enhance alignment in a liquid crystal medium provided onto said anisotropic film.
- the materials according to the present invention may also be combined with photoisomerisable compounds and/or chromophores for use in or as photoalignment layers, as described in US 2003/0021913 A1.
- the materials according to the present invention can be employed as chemical sensors or materials for detecting and discriminating DNA sequences.
- Such uses are described for example in L. Chen, D. W. McBranch, H. Wang, R. Helgeson, F. Wudl and D. G. Whitten, Proc. Natl. Acad. Sci. U.S.A. 1999, 96, 12287; D. Wang, X. Gong, P. S. Heeger, F. Rininsland, G. C. Bazan and A. J. Heeger, Proc. Natl. Acad. Sci.
- reaction mixture was sonicated for an additional 5 minutes and then stirred at 80° C. for 19 hours. After cooling to 20° C., tin(II) chloride (0.38 g, 2.00 mmol) in 2N HCL (6 cm 3 ) was added. The suspension formed was stirred at 20° C. for 30 minutes followed by the addition of methanol (50 cm 3 ).
- the precipitate was collected by suction filtration before purification by flash chromatography (eluent: 1:1 chloroform:petroleum ether 40-60) to 2,8-bis(5-fluoro-2-thienyl)-5,11-bis(triisopropylsilylethynyl)anthradithiophene (3) as a purple-red solid (0.36 g, 42%).
- Top-gate thin-film organic field-effect transistors were fabricated on glass substrates with photolithographically defined Au source-drain electrodes.
- a 0.5 wt. % solution of a 1:1 blend of the compound and a polytriarylamine (PTAA) binder in ortho-dichlorobenzene (o-DCB) was spin-coated ontop.
- a fluoropolymer dielectric material D139 was spin-coated ontop.
- a photolithographically defined Au gate electrode was deposited.
- the electrical characterization of the transistor devices was carried out in ambient air atmosphere using computer controlled Agilent 4155C Semiconductor Parameter Analyser.
- Charge carrier mobility in the saturation regime ( ⁇ sat ) was calculated for the compound and the results are summarized in Table 1 below.
- Field-effect mobility was calculated in the saturation regime (V d >(V g ⁇ V 0 )) using equation (1):
- V d WC i L ⁇ ⁇ sat ⁇ ( V g - V 0 ) ( 1 )
- W is the channel width
- L the channel length
- C i the capacitance of insulating layer
- V g the gate voltage
- V 0 the turn-on voltage
- ⁇ sat is the charge carrier mobility in the saturation regime.
- Turn-on voltage (V 0 ) was determined as the onset of source-drain current.
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Abstract
Description
- one of Y1 and Y2 is —CH═ or ═CH— and the other is —X—,
- one of Y3 and Y4 is —CH═ or ═CH— and the other is —X—,
- X is —O—, —S—, —Se— or —NR0—,
- R1 and R2 independently of each other denote straight chain, branched or cyclic alkyl with 1 to 20 C-atoms, which is unsubstituted or substituted by one or more groups L, and wherein one or more non-adjacent CH2 groups are optionally replaced, in each case independently from one another, by —O—, —S—, —NR0—, —SiR0R00—, —CY0═CY00— or —C≡C— in such a manner that O and/or S atoms are not linked directly to one another, or denote aryl or heteroaryl with 4 to 20 ring atoms which is unsubstituted or substituted by one or more groups L,
- Ar1 and Ar2 independently of each other denote aryl or heteroaryl with 4 to 20 ring atoms, which are optionally substituted by one or more groups L,
- L is selected from P-Sp-, F, Cl, Br, I, —OH, —CN, —NO2, —NCO, —NCS, —OCN, —SCN, —C(═O)NR0R00, —C(═O)X0, —C(═O)R0, —NR0R00, C(═O)OH, optionally substituted silyl or germyl, optionally substituted aryl or heteroaryl having 4 to 20 ring atoms, straight chain, branched or cyclic alkyl, alkoxy, oxaalkyl or thioalkyl with 1 to 20, preferably 1 to 12 C atoms which is unsubstituted or substituted with one or more F or Cl atoms or OH groups, and straight chain, branched or cyclic alkenyl, alkynyl, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy with 2 to 20, preferably 2 to 12 C atoms which is unsubstituted or substituted with one or more F or Cl atoms or OH groups,
- P is a polymerisable group,
- Sp is a spacer group or a single bond,
- X0 is halogen,
- R0 and R00 independently of each other denote H or alkyl with 1 to 20 C-atoms,
- Y0 and Y00 independently of each other denote H, F, Cl or CN,
- m is 1 or 2,
- n is 1 or 2.
TABLE 1 | ||
| HOMO (eV) | LUMO (eV) |
R = H | −7.59 | −1.59 |
| −7.60 | −1.72 |
| −7.62 | −1.80 |
ii) Due to the low single-bond torsional potential in 2,2′-bithiophenes, incorporating five-membered heteroaryls onto the ADT terminals is expected to create co-planar conjugated molecules in the solid state. The co-planarity has been proven by the single crystal X-ray structural analysis of one of the examples of the present invention. The extended conjugation length of the molecules, combined with solublising groups of matching sizes on the perpendicular direction (like R1 and R2 in formula I), increase the intermolecular π-π overlap by adopting the face-to-face arrangement in the crystalline state and hence enhance the charge mobility by maximizing electronic coupling between adjacent molecules.
iii) The low single-bond torsional potential in 2,2′-bithiophenes as described above enables essential free-rotation of the terminal heteroaryl groups in the solution states. Thus, these new molecules will be expected to have higher solubilities compared with the fused ring analogues of similar lengths. Good solubility of organic semi-conducting materials is of crucial importance to solution processing via mass-production printing techniques such as ink-jet printing. Some of the examples of this invention possess solubilities >1 wt. % in halogenated hydrocarbons, alkylated benzenes, THF and oligo(ethylene glycol) dialkyl ethers.
iv) An additional benefit gained by the enhanced conjugation length of the new molecules is that the melting temperature increases. This is a direct result of the increased intermolecular π-π interactions, hence increased lattice energy in the crystalline states of conjugated molecules. Differential scanning calorimetry measurements show that most of the crystalline solids in this invention do not melt under 300° C. Morphological stability of the thin crystalline films of semiconducting materials is essential when any annealing process is required during device production, and when localised spot temperatures may rise in working devices.
-AR′R″R′″ II
wherein
- A is Si or Ge, preferably Si, and
- R′, R″, R′″ are identical or different groups selected from the group consisting of H, a straight-chain, branched or cyclic alkyl or alkoxy group having 1 to 20 C atoms, a straight-chain, branched or cyclic alkenyl group having 2 to 20 C atoms, a straight-chain, branched or cyclic alkynyl group having 2 to 20 C atoms, a straight-chain, branched or cyclic alkylcarbonyl group having 2 to 20 C atoms, an aryl or heteroaryl group having 4 to 20 ring atoms, an arylalkyl or heteroarylalkyl group having 4 to 20 ring atoms, an aryloxy or heteroaryloxy group having 4 to 20 ring atoms, or an arylalkyloxy or heteroarylalkyloxy group having 4 to 20 ring atoms, wherein all the aforementioned groups are optionally substituted with one or more groups L′, and
- L′ has one of the meanings given for L in formula I, which is different from a silyl and germyl group.
wherein X has one of the meanings of L given above, and is preferably H, F, Cl, Br, I, CN, COOH, COOR0, CONR0R00, or alkyl or perfluoroalkyl having 1 to 20 C atoms, o is 1, 2, 3 or 4, and the dashed line denotes the linkage to the adjacent ring in formula I.
CH2═CW2—(O)k1—, CH3—CH═CH—O—, (CH2═CH)2CH—OCO—, (CH2═CH—CH2)2CH—OCO—, (CH2═CH)2CH—O—, (CH2═CH—CH2)2N—, (CH2═CH—CH2)2N—CO—, HO—CW2W3—, HS—CW2W3—, HW2N—, HO—CW2W3—NH—, CH2═CW1—CO—NH—, CH2═CH—(COO)k1-Phe-(O)k2—, CH2═CH—(CO)k1-Phe-(O)k2—, Phe-CH═CH—, HOOC—, OCN—, and W4W5W6Si—, with W1 being H, F, Cl, CN, CF3, phenyl or alkyl with 1 to 5 C-atoms, in particular H, Cl or CH3, W2 and W3 being independently of each other H or alkyl with 1 to 5 C-atoms, in particular H, methyl, ethyl or n-propyl, W4, W5 and W6 being independently of each other Cl, oxaalkyl or oxacarbonylalkyl with 1 to 5 C-atoms, W7 and W8 being independently of each other H, Cl or alkyl with 1 to 5 C-atoms, Phe being 1,4-phenylene that is optionally substituted by one or more groups L as defined above, and k1 and k2 being independently of each other 0 or 1.
- Sp′ is alkylene with up to 30 C atoms which is unsubstituted or mono- or polysubstituted by F, Cl, Br, I or CN, it being also possible for one or more non-adjacent CH2 groups to be replaced, in each case independently from one another, by —O—, —S—, —NH—, —NR0—, —SiR0R00—, —CO—, —COO—, —COO—, —COO—O—, —S—CO—, —CO—S—, —CH═CH— or —C≡C— in such a manner that O and/or S atoms are not linked directly to one another,
- X′ is —O—, —S—, —CO—, —COO—, —COO—, —O—COO—, —CO—NR0—, —NR0—CO—, —NR0—CO—NR00—, —OCH2—, —CH2O—, —SCH2—, —CH2S—, —CF2O—, —OCF2—, —CF2S—, —SCF2—, —CF2CH2—, —CH2CF2—, —CF2CF2—, —CH═N—, —N═CH—, —N═N—, —CH═CR0—, —CY0═CY00—, —C≡C—, —CH═CH—COO—, —OCO—CH═CH— or a single bond,
- R0 and R00 are independently of each other H or alkyl with 1 to 12 C-atoms, and
- Y0 and Y00 are independently of each other H, F, Cl or CN.
- X′ is preferably —O—, —S—, —OCH2—, —CH2O—, —SCH2—, —CH2S—, —CF2O—, —OCF2—, —CF2S—, —SCF2—, —CH2CH2—, —CF2CH2—, —CH2CF2—, —CF2CF2—, —CH═N—, —N═CH—, —N═N—, —CH═CR0—, —CY0═CY00—, —C≡C— or a single bond, in particular —O—, —S—, —C≡C—, —CY0═CY00— or a single bond. In another preferred embodiment X′ is a group that is able to form a conjugated system, such as —C≡C— or —CY0═CY00—, or a single bond.
- a) 2,3-Thiophenedicarboxaldehyde diacetal (A) is halogenated by lithiation with alkyllithium, LDA or another lithiation reagent, and then reacted with a halogenation agent including but not limited to N-chlorosuccinimide, carbon tetrachloride, N-bromosuccinimide, carbon tetrabromide, N-iodosuccinimide, iodinechloride, elemental iodine, to afford the 5-halogenated 2,3-thiophenedicarboxaldehyde diacetal (B).
- b) The 5-halogenated 2,3-thiophenedicarboxaldehyde diacetal (B) is deprotected under acidic conditions to the corresponding dialdehyde (C), which is then condensed with a cyclic 1,4-diketone, such as 1,4-cyclohexadione, 1,4-dihydroxy-naphthalene or its higher analogues, to yield the quinone of the dihalogenated acenodithiophene (D).
- c) The quinone of the dihalogenated acenodithiophene (D) is treated with silylethynyllithium, followed by a hydrolysis, for example with diluted HCl, to yield the dihalogenated diol intermediate (E).
- d) Heteroaryl groups are introduced in the dihalogenated diol intermediate (E) by cross-coupling it with a corresponding heteroaryl boronic acid, boronic ester, stannane, zink halide or magnesium halide, in the presence of a nickel or palladium complex as catalyst, to yield the heteroaryl extended diol (F).
- e) The heteroaryl extended diol (F) is aromatised using a reducing agent under acidic conditions to afford the terminally substituted heteroaryl acenodithiophene (1,2).
- f) Alternatively to steps b)-e), the 5-halogenated 2,3-thiophenedicarbox-aldehyde diacetal (B) obtained by step a) is reacted in a cross-coupling reaction with a corresponding heteroaryl boronic acid, boronic ester, stannane, zink halide or magnesium halide, in the presence of a nickel or palladium complex as catalyst. The resulting product is deprotected and condensed with a cyclic 1,4-diketone as described in step b), followed by treatment with silylethynyllithium and hydrolysis as described in step c), and the resulting heteroaryl extended diol is aromatised as described in step e).
- (i) depositing on a substrate a liquid layer of a formulation comprising one or more compounds of formula I as described above and below, one or more organic binder resins or precursors thereof, and optionally one or more solvents,
- (ii) forming from the liquid layer a solid layer which is the organic semiconducting layer,
- (iii) optionally removing the layer from the substrate.
TABLE 1 | ||
Hansen parameter |
δd MPa1/2 | δp MPa1/2 | δh MPa1/2 | ||
Preferred range | 14.5+ | 0-10 | 0-14 | ||
More preferred range | 16+ | 0-9 | 0-12 | ||
Most preferred range | 17+ | 0-8 | 0-10 | ||
TABLE 2 | |
typical low | |
frequency | |
Binder | permittivity (ε) |
polystyrene | 2.5 |
poly(α-methylstyrene) | 2.6 |
poly(α-vinylnaphtalene) | 2.6 |
poly(vinyltoluene) | 2.6 |
polyethylene | 2.2-2.3 |
cis-polybutadiene | 2.0 |
polypropylene | 2.2 |
poly(4-methyl-1-pentene) | 2.1 |
poly (4-methylstyrene) | 2.7 |
poly(chorotrifluoroethylene) | 2.3-2.8 |
poly(2-methyl-1,3-butadiene) | 2.4 |
poly(p-xylylene) | 2.6 |
poly(α-α-α′-α′ tetrafluoro-p-xylylene) | 2.4 |
poly[1,1-(2-methyl propane)bis(4-phenyl)carbonate] | 2.3 |
poly(cyclohexyl methacrylate) | 2.5 |
poly(chlorostyrene) | 2.6 |
poly(2,6-dimethyl-1,4-phenylene ether) | 2.6 |
polyisobutylene | 2.2 |
poly(vinyl cyclohexane) | 2.2 |
poly(vinylcinnamate) | 2.9 |
poly(4-vinylbiphenyl) | 2.7 |
TABLE 3 | |||
typical low | |||
frequency | |||
Binder | permittivity (ε) | ||
poly(ethylene/tetrafluoroethylene) | 2.6 | ||
poly(ethylene/chlorotrifluoroethylene) | 2.3 | ||
fluorinated ethylene/propylene copolymer | 2-2.5 | ||
polystyrene-co-α-methylstyrene | 2.5-2.6 | ||
ethylene/ethyl acrylate copolymer | 2.8 | ||
poly(styrene/10% butadiene) | 2.6 | ||
poly(styrene/15% butadiene) | 2.6 | ||
poly(styrene/2,4 dimethylstyrene) | 2.5 | ||
Topas ™ (all grades) | 2.2-2.3 | ||
- Ar11, Ar22 and Ar33 which may be the same or different, denote, independently if in different repeat units, an optionally substituted aromatic group that is mononuclear or polynuclear, and
- m is an integer ≧1, preferably ≧6, preferably ≧10, more preferably ≧15 and most preferably ≧20.
A(c)B(d) . . . Z(z) 2
- Ra and Rb are independently of each other selected from H, F, CN, NO2, —N(Rc)(Rd) or optionally substituted alkyl, alkoxy, thioalkyl, acyl, aryl,
- Rc and Rd are independently or each other selected from H, optionally substituted alkyl, aryl, alkoxy or polyalkoxy or other substituents,
and wherein the asterisk (*) is any terminal or end capping group including H, and the alkyl and aryl groups are optionally fluorinated;
- Y is Se, Te, O, S or —N(Re), preferably O, S or —N(Re)—,
- Re is H, optionally substituted alkyl or aryl,
- Ra and Rb are as defined in formula 3;
- Z is —C(T1)=C(T2)-, —C≡C—, —N(Rf)—, —N═N—, (Rf)═N—, —N═C(Rf)—,
- T1 and T2 independently of each other denote H, Cl, F, —CN or lower alkyl with 1 to 8 C atoms,
- Rf is H or optionally substituted alkyl or aryl;
wherein Ra, Rb, Rg and Rh independently of each other have one of the meanings of Ra and Rb in formula 3.
- (i) first mixing a compound of formula I and an organic binder or a precursor thereof. Preferably the mixing comprises mixing the two components together in a solvent or solvent mixture,
- (ii) applying the solvent(s) containing the compound of formula I and the organic binder to a substrate; and optionally evaporating the solvent(s) to form a solid organic semiconducting layer according to the present invention,
- (iii) and optionally removing the solid layer from the substrate or the substrate from the solid layer.
wherein a=mass of compound of formula I, b=mass of binder and c=mass of solvent.
-
- a low work function electrode (for example a metal, such as aluminum), and a high work function electrode (for example ITO), one of which is transparent,
- a layer (also referred to as “active layer”) comprising a hole transporting material and an electron transporting material, preferably selected from OSC materials, situated between the electrodes; the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p-type and n-type semiconductor, forming a bulk heterjunction (BHJ) (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533),
- an optional conducting polymer layer, for example comprising a blend of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)), situated between the active layer and the high work function electrode, to modify the work function of the high work function electrode to provide an ohmic contact for holes,
- an optional coating (for example of LiF) on the side of the low workfunction electrode facing the active layer, to provide an ohmic contact for electrons.
-
- a low work function electrode (for example a metal, such as gold), and a high work function electrode (for example ITO), one of which is transparent,
- a layer (also referred to as “active layer”) comprising a hole transporting material and an electron transporting material, preferably selected from OSC materials, situated between the electrodes; the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p-type and n-type semiconductor, forming a BHJ,
- an optional conducting polymer layer, for example comprising a blend of PEDOT:PSS, situated between the active layer and the low work function electrode to provide an ohmic contact for electrons,
- an optional coating (for example of TiOx) on the side of the high workfunction electrode facing the active layer, to provide an ohmic contact for holes.
-
- a source electrode,
- a drain electrode,
- a gate electrode,
- a semiconducting layer,
- one or more gate insulator layers,
- optionally a substrate.
wherein the semiconductor layer preferably comprises a compound or formulation as described above and below.
where W is the channel width, L the channel length, Ci the capacitance of insulating layer, Vg the gate voltage, V0 the turn-on voltage, and μsat is the charge carrier mobility in the saturation regime. Turn-on voltage (V0) was determined as the onset of source-drain current.
TABLE 1 |
Mobilties (μsat) for compounds (1)-(4) in top-gate OFETs |
Compound | Mobility (μsat)/cm2/Vs | ||
(1) | 0.1 | ||
(2) | 0.02 | ||
(3) | 0.006 | ||
(4) | 0.26 | ||
Claims (15)
-AR′R″R′″ II
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EP10008449.0 | 2010-08-13 | ||
PCT/EP2011/003512 WO2012019683A2 (en) | 2010-08-13 | 2011-07-14 | Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors |
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EP (1) | EP2603499A2 (en) |
JP (1) | JP6005642B2 (en) |
KR (1) | KR101837791B1 (en) |
CN (1) | CN103068811B (en) |
RU (1) | RU2013110785A (en) |
SG (1) | SG187758A1 (en) |
TW (1) | TWI513702B (en) |
WO (1) | WO2012019683A2 (en) |
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GB201203159D0 (en) | 2012-02-23 | 2012-04-11 | Smartkem Ltd | Organic semiconductor compositions |
KR20150016255A (en) * | 2012-04-25 | 2015-02-11 | 메르크 파텐트 게엠베하 | Conjugated polymers |
US9444060B2 (en) | 2014-04-29 | 2016-09-13 | Sabic Global Technologies B.V. | Synthesis of new small molecules/oligomers with high conductivity and absorption for optoelectronic application |
EP3160972B1 (en) * | 2014-06-30 | 2019-07-24 | Merck Patent GmbH | Extended non-linear acene derivatives and their use as organic semiconductors |
WO2017022761A1 (en) | 2015-08-04 | 2017-02-09 | 富士フイルム株式会社 | Organic thin-film transistor and method for producing same, organic thin-film transistor material, organic thin-film transistor composition, compound, and organic semiconductor film |
JP6478277B2 (en) * | 2015-08-20 | 2019-03-06 | 日本化薬株式会社 | Organic polycyclic aromatic compounds and uses thereof |
WO2018061821A1 (en) | 2016-09-29 | 2018-04-05 | 富士フイルム株式会社 | Composition for forming organic semiconductor film, organic semiconductor film and method for producing same, and organic semiconductor element |
CN108707222B (en) * | 2018-04-25 | 2021-05-14 | 华南理工大学 | Anthracene derivative-based electroluminescent polymer and preparation method and application thereof |
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Also Published As
Publication number | Publication date |
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JP6005642B2 (en) | 2016-10-12 |
US20130146818A1 (en) | 2013-06-13 |
WO2012019683A3 (en) | 2012-04-19 |
SG187758A1 (en) | 2013-03-28 |
WO2012019683A2 (en) | 2012-02-16 |
KR20130099939A (en) | 2013-09-06 |
EP2603499A2 (en) | 2013-06-19 |
KR101837791B1 (en) | 2018-04-19 |
CN103068811B (en) | 2015-06-24 |
RU2013110785A (en) | 2014-09-20 |
TWI513702B (en) | 2015-12-21 |
CN103068811A (en) | 2013-04-24 |
JP2013540697A (en) | 2013-11-07 |
TW201211052A (en) | 2012-03-16 |
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