US9231004B2 - Solid-state imaging apparatus and imaging system - Google Patents
Solid-state imaging apparatus and imaging system Download PDFInfo
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- US9231004B2 US9231004B2 US14/484,516 US201414484516A US9231004B2 US 9231004 B2 US9231004 B2 US 9231004B2 US 201414484516 A US201414484516 A US 201414484516A US 9231004 B2 US9231004 B2 US 9231004B2
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- 238000003384 imaging method Methods 0.000 title claims abstract description 188
- 238000006243 chemical reaction Methods 0.000 description 109
- 239000013256 coordination polymer Substances 0.000 description 84
- 230000003287 optical effect Effects 0.000 description 44
- 230000008859 change Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
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- H04N5/3572—
Definitions
- Embodiments described herein relate generally to a solid-state imaging apparatus and an imaging system.
- a solid-state imaging apparatus is arranged on a predetermined imaging plane of an imaging lens.
- the imaging lens forms an image of an object on an imaging region (an imaging area) of the solid-state imaging apparatus.
- the solid-state imaging apparatus generates an image signal corresponding to an object image.
- a shading phenomenon may occur such that luminance (a signal level) of pixel signals around the imaging region attenuates as compared with that of the pixel signals near the center of the imaging region.
- FIG. 1 illustrates a configuration of an imaging system to which a solid-state imaging apparatus according to an embodiment of the present invention is applied;
- FIG. 2 illustrates the configuration of the imaging system to which the solid-state imaging apparatus according to the embodiment is applied
- FIG. 3 illustrates a circuit configuration of the solid-state imaging apparatus according to the embodiment
- FIG. 4 illustrates an incident angle of a principal ray according to the embodiment
- FIG. 5 illustrates an array of a plurality of pixels according to the embodiment
- FIG. 6 is a plan view illustrating a plurality of pixels positioned on a straight line extending in an X-direction from the center of an imaging region according to the embodiment;
- FIGS. 7A to 7C are sectional views illustrating the pixels positioned on the straight line extending in the X-direction from the center of the imaging region according to the embodiment;
- FIG. 8 is a plan view illustrating a plurality of pixels positioned on a straight line extending in a Y-direction from the center of the imaging region according to the embodiment;
- FIG. 9 is a plan view illustrating a plurality of pixels positioned on a straight line extending in an oblique direction from the center of the imaging region according to the embodiment.
- FIGS. 10A to 10C illustrate effects of the embodiment.
- a solid-state imaging apparatus having an imaging region.
- a plurality of pixels are two-dimensionally arranged.
- the plurality of pixels include a first pixel and a second pixel.
- the first pixel is arranged near a center of the imaging region.
- the second pixel is arranged at a position farther away from the center of the imaging region than the first pixel.
- the first pixel includes a first micro lens having a substantially circular shape as viewed in a plan view.
- the second pixel includes a second micro lens having a substantially elliptical shape as viewed in a plan view and having an area larger than an area of the first micro lens.
- FIGS. 1 and 2 illustrate schematic configurations of the imaging system.
- An imaging system 1 can be, for example, a digital camera or a digital video camera, or can be an imaging system in which a camera module is applied to an electronic device (for example, a mobile terminal with a camera function).
- the imaging system 1 includes an imaging unit 2 and a subsequent-stage processing unit 3 .
- the imaging unit 2 is, for example, a camera module.
- the imaging unit 2 includes an imaging optical system 4 and a solid-state imaging apparatus 5 .
- the subsequent-stage processing unit 3 includes an image signal processor (ISP) 6 , a storage unit 7 , and a display unit 8 .
- ISP image signal processor
- the imaging optical system 4 includes an imaging lens 47 , a half mirror 43 , a mechanical shutter 46 , a lens 44 , a prism 45 , and a finder 48 .
- the imaging lens 47 includes imaging lenses 47 a and 47 b , a diaphragm (not shown), and a lens drive mechanism 47 c .
- the diaphragm is arranged between the imaging lenses 47 a and 47 b to adjust the amount of light to be guided to the imaging lens 47 b .
- FIG. 1 a case where the imaging lens 47 includes two imaging lenses 47 a and 47 b is shown as an example.
- the imaging lens 47 can include a plurality of imaging lenses.
- the solid-state imaging apparatus 5 is arranged on a predetermined imaging plane of the imaging lens 47 .
- the imaging lens 47 refracts incident light, and guides the light to an imaging area of the solid-state imaging apparatus 5 via the half mirror 43 and the mechanical shutter 46 to form an image of an object on the imaging area (an imaging region IR) of the solid-state imaging apparatus 5 .
- the solid-state imaging apparatus 5 generates an image signal corresponding to an object image.
- the solid-state imaging apparatus 5 includes an image sensor 10 and a signal processing circuit 11 .
- FIG. 3 illustrates a circuit configuration of the solid-state imaging apparatus.
- the image sensor 10 can be, for example, a CMOS image sensor or can be a CCD image sensor.
- the image sensor 10 includes a pixel array 12 , a vertical shift register 13 , a timing control unit 15 , a correlation double sampling unit (CDS) 16 , an analog/digital conversion unit (ADC) 17 , and a line memory 18 .
- CDS correlation double sampling unit
- ADC analog/digital conversion unit
- the pixel array 12 is arranged in the imaging region IR (see FIG. 5 ) in the solid-state imaging apparatus 5 .
- the imaging region IR has a rectangular shape.
- a plurality of pixels P is arranged two-dimensionally.
- the respective pixels P include a micro lens ML and a photoelectric conversion unit. PD (see FIGS. 7A to 7C ).
- the micro lens ML collects light incident to the pixel P, on a light receiving surface of the photoelectric conversion unit PD.
- the photoelectric conversion unit PD is, for example, a photodiode, and generates a pixel signal corresponding to the amount of received light.
- the pixel array 12 generates an image signal (an analog signal) corresponding to the amount of light incident to each pixel P.
- the generated image signal is read from the pixel P to the CDS 16 side by the timing control unit 15 and the vertical shift register 13 , is converted to an image signal (a digital signal) via the CDS 16 and the ADC 17 , and is output to the signal processing circuit 11 via the line memory 18 .
- image data is generated by performing signal processing with respect to the image signal.
- the generated image data is output to the ISP 6 .
- the lens drive mechanism 47 c shown in FIG. 1 drives the imaging lens 47 b along an optical axis OP under control of the ISP 6 (see FIG. 2 ).
- the ISP 6 obtains focusing adjusting information according to an Auto Focus (AF) function, to control the lens drive mechanism 47 c based on the focusing adjusting information, thereby adjusting the imaging lenses 47 a and 47 b to a focused state (just focus).
- AF Auto Focus
- FIG. 4 illustrates the incident angle of light (a principal ray) to the respective pixels P in the imaging region IR.
- a direction along the optical axis OP is plotted on a Z axis
- a direction along a side SD 2 (see FIG. 5 ) of the imaging region IR is plotted on an X axis
- a direction along a side SD 1 (see FIG. 5 ) of the imaging region IR is plotted on a Y axis.
- Imaging lens 47 Light reflected by an object OB is refracted by the imaging lens 47 to form an image of the object OB in the imaging region IR (an imaging area) of the solid-state imaging apparatus 5 .
- the imaging region IR a plurality of pixels P is arranged two-dimensionally, and a plurality of micro lenses ML is arranged two-dimensionally corresponding thereto (see FIG. 5 ).
- the incident angle of light to the micro lens ML of a pixel P arranged at a position away from the center CP of the imaging region IR becomes larger than the incident angle of light to the micro lens ML of a pixel P arranged near the center CP of the imaging region IR.
- a pixel P- 1 is arranged near the center CP of the imaging region IR.
- a pixel P- 2 is arranged at a position farther away from the center CP of the imaging region IR than the pixel P- 1 .
- an incident angle ⁇ 2 of light to a micro lens ML- 2 of the pixel P- 2 becomes larger than an incident angle ⁇ 1 ( ⁇ 0) of light to a micro lens ML- 1 of the pixel P- 1 .
- a pixel 2 - 3 is arranged at a position farther away from the center CP of the imaging region IR than the positions of the pixels P- 1 and P- 2 .
- an incident angle ⁇ 3 of light to a micro lens ML- 3 of the pixel P- 3 becomes larger than the incident angles ⁇ 1 and ⁇ 2 of light to the micro lenses ML- 1 and ML- 2 of the pixels P- 1 and P- 2 . That is, in the pixels P arranged in the imaging region IR, the incident angle of light to the micro lenses ML of the pixels P increases as moving away from the center CP of the imaging region IR.
- FIG. 10A illustrates an array of pixels in a basic mode.
- FIG. 10C a relation between pixel positions of the pixels positioned on a broken line in FIG. 10A and a signal level (a luminance level) of the pixel signals generated in the pixels is shown as a basic mode.
- the amount of light collected by the photoelectric conversion unit PD of the pixel P decreases as moving away from the center CP of the imaging region IR. Accordingly, as shown as the basic mode in FIG. 10C , there is a tendency such that the luminance level (a signal level) of the pixel signal generated by the photoelectric conversion unit PD of the pixel P attenuates considerably (for example, with an attenuation width ⁇ BL) as moving away from the center CP of the imaging region IR.
- shading may occur in which the luminance of the pixel signals around the imaging region IR attenuates as compared with the luminance of the pixel signals near the center CP of the imaging region IR.
- the present embodiment it is aimed to suppress occurrence of shading by increasing the area of the micro lens ML as viewed in a plan view, as moving away from the center CP of the imaging region IR.
- the imaging region IR is, for example, in a rectangular shape.
- the imaging region IR has sides SD 1 to SD 4 and corners CN 1 to CN 4 .
- the sides SD 1 and SD 2 , the sides SD 2 and SD 3 , the sides SD 3 and SD 4 , and the sides SD 4 and SD 1 are respectively adjacent to each other.
- the corners CN 1 , CN 2 , CN 3 , and CN 4 are respectively formed by an intersection of the sides SD 1 and SD 2 , the sides SD 2 and SD 3 , the sides SD 3 and SD 4 , and the sides SD 4 and SD 1 .
- the shape of the micro lens ML changes from a substantially circular shape to a substantially elliptical shape extending in the X direction as moving away from the center CP of the imaging region IR.
- a straight line SL 1 extends in the X direction from the center CP of the imaging region IR.
- FIG. 6 is a plan view illustrating a plurality of pixels positioned on the straight line SL 1 .
- a length of a major axis thereof gradually increases as moving away from the center CP of the imaging region IR.
- the pixel P- 1 arranged near the center CP of the imaging region IR has a photoelectric conversion unit PD- 1 and the micro lens ML- 1 .
- the micro lens ML- 1 includes the photoelectric conversion unit PD- 1 .
- the micro lens ML- 1 has a substantially circular shape as viewed in a plan view. For example, as viewed perspectively from the direction vertical to a light-receiving surface of the photoelectric conversion unit PD- 1 , the center of an optical axis of the micro lens ML- 1 can be matched with a barycenter of the photoelectric conversion unit PD- 1 .
- FIGS. 7A to 7C are sectional views illustrating the pixels positioned on the straight line SL 1 .
- the pixel P- 1 a that is adjacent to the pixel P- 1 on the straight line SL 1 has a photoelectric conversion unit PD- 1 a and a micro lens ML- 1 a .
- the micro lens ML- 1 a includes the photoelectric conversion unit PD- 1 a .
- the micro lens ML- 1 a has an approximately circular shape as viewed in a plan view; however, has a substantially elliptical shape slightly extending along the side SD 2 .
- the micro lens ML- 1 a has a substantially elliptical shape obtained by slightly extending the shape of the micro lens ML- 1 toward the center CP, based on the shape of the micro lens ML- 1 .
- a diameter of the micro lens ML- 1 is D- 1
- a length of a major axis of the micro lens ML- 1 a is D- 1 a
- the following Expression 1 is established.
- a length of a minor axis of the micro lens ML- 1 a can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 1 a can be slightly shifted toward the center CP from the barycenter of the photoelectric conversion unit PD- 1 a.
- light to be incident to the pixel P- 1 a (a principal ray) has an incident angle ⁇ 1 a (> ⁇ 1 ), and enters the micro lens ML- 1 a with an angle slightly inclined from the direction substantially vertical to the light-receiving surface of the photoelectric conversion unit PD- 1 a .
- the center of the optical axis of the micro lens ML- 1 a is slightly shifted toward the center CP. Therefore, the micro lens ML- 1 a can easily collect incident light, which is incident thereto with a slight inclination, on the light-receiving surface of the photoelectric conversion unit PD- 1 a .
- the micro lens ML- 1 a has a larger area than the micro lens ML- 1 , the amount of received light can be easily secured.
- the pixel P- 2 arranged at a position farther away from the center CP than the pixels P- 1 and P- 1 a on the straight line SL 1 has a photoelectric conversion unit PD- 2 and a micro lens ML- 2 .
- the micro lens ML- 2 includes the photoelectric conversion unit. PD- 2 .
- the micro lens ML- 2 has a substantially elliptical shape extending along the side SD 2 as viewed in a plan view.
- the micro lens ML- 2 has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 1 a , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 2 is D- 2
- the following Expression 2 is established.
- a length of a minor axis of the micro lens ML- 2 can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 2 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 2 , as compared with the pixel P- 1 a .
- the pixel P- 2 a that is adjacent to the pixel P- 2 on the straight line SL 1 has a photoelectric conversion unit PD- 2 a and a micro lens ML- 2 a .
- the micro lens ML- 2 a includes the photoelectric conversion unit PD- 2 a .
- the micro lens ML- 2 a has a substantially elliptical shape extending along the side SD 2 as viewed in a plan view.
- the micro lens ML- 2 a has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 2 , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 2 a is D- 2 a
- the following Expression 4 is established.
- a length of a minor axis of the micro lens ML- 2 a can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 2 a can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 2 a , as compared with the pixel P- 2 .
- a shift amount of the center of the optical axis of the micro lens ML- 2 a from the barycenter of the photoelectric conversion unit PD- 2 a is SF 2 a , the following Expression 5 is established. SF 2 a>SF 2 Expression 5
- the pixel P- 3 arranged at a position farther away from the center CP than the pixels P- 2 and P- 2 a on the straight line SL 1 has a photoelectric conversion unit PD- 3 and a micro lens ML- 3 .
- the micro lens ML- 3 includes the photoelectric conversion unit PD- 3 .
- the micro lens ML- 3 has a substantially elliptical shape extending along the side SD 2 as viewed in a plan view.
- the micro lens ML- 3 has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 2 a , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 3 is D- 3
- the following Expression 6 is established.
- a length of a minor axis of the micro lens ML- 3 can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 3 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 3 , as compared with the pixel P- 2 a .
- PD- 3 is SF 3
- the following Expression 7 is established. SF 3> SF 2 a Expression 7
- the pixel P- 3 a that is adjacent to the pixel P- 3 on the straight line SL 1 has a photoelectric conversion unit PD- 3 a and a micro lens ML- 3 a .
- the micro lens ML- 3 a includes the photoelectric conversion unit PD- 3 a .
- the micro lens ML- 3 a has a substantially elliptical shape extending along the side SD 2 as viewed in a plan view.
- the micro lens ML- 3 a has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 3 , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 3 a is D- 3 a
- the following Expression 8 is established.
- a length of a minor axis of the micro lens ML- 3 a can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 3 a can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 3 a , as compared with the pixel P- 3 .
- a shift amount of the center of the optical axis of the micro lens ML- 3 a from the barycenter of the photoelectric conversion unit PD- 3 a is SF 3 a , the following Expression 9 is established.
- light to be incident to the pixel P- 3 a (a principal ray) has an incident angle ⁇ 3 a (> ⁇ 3 ), and enters the micro lens ML- 3 a with an angle inclined from the direction substantially vertical to the light-receiving surface of the photoelectric conversion unit PD- 3 a .
- the center of the optical axis of the micro lens ML- 3 a is shifted toward the center CP. Therefore, the micro lens ML- 3 a can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 3 a .
- the micro lens ML- 3 a has a larger area than the micro lenses ML- 1 to ML- 3 , the amount of received light can be easily secured.
- the shape of the micro lens ML changes from a substantially circular shape to a substantially elliptical shape extending in the Y direction as moving away from the center CP of the imaging region IR.
- the straight line SL 2 extends in the Y direction from the center CP of the imaging region IR.
- FIG. 8 is a plan view illustrating the pixels positioned on the straight line SL 2 .
- the major axis thereof gradually increases as moving away from the center CP of the imaging region IR.
- the pixel P- 1 b that is adjacent to the pixel P- 1 on the straight line SL 2 has a photoelectric conversion unit PD- 1 b and a micro lens ML- 1 b .
- the micro lens ML- 1 b includes the photoelectric conversion unit PD- 1 b .
- the micro lens ML- 1 b has an approximately circular shape as viewed in a plan view; however, has a substantially elliptical shape slightly extending along the side SD 1 .
- the micro lens ML- 1 b has a substantially elliptical shape obtained by slightly extending the shape of the micro lens ML- 1 toward the center CP, based on the shape of the micro lens ML- 1 .
- the diameter of the micro lens ML- 1 is D- 1 and a length of a major axis of the micro lens ML- 1 b is D- 1 b
- the following Expression 10 is established.
- a length of a minor axis of the micro lens ML- 1 b can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 1 b can be slightly shifted toward the center CP from the barycenter of the photoelectric conversion unit PD- 1 b . Accordingly, the micro lens ML- 1 b can easily collect incident light on the light-receiving surface of the photoelectric conversion unit PD- 1 b . Further, because the micro lens ML- 1 b has a larger area than the micro lens ML- 1 , the amount of received light can be easily secured.
- the pixel P- 4 arranged at a position farther away from the center CP than the pixels P- 1 and P- 1 b on the straight line SL 2 has a photoelectric conversion unit PD- 4 and a micro lens ML- 4 .
- the micro lens ML- 4 includes the photoelectric conversion unit PD- 4 .
- the micro lens ML- 4 has a substantially elliptical shape extending along the side SD 1 as viewed in a plan view.
- the micro lens ML- 4 has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 1 b , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 4 is D- 4
- the following Expression 11 is established.
- a length of a minor axis of the micro lens ML- 4 can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 4 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 4 , as compared with the pixel P- 1 b .
- the center of the optical axis of the micro lens ML- 4 is shifted toward the center CP. Therefore, the micro lens ML- 4 can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 4 . Further, because the micro lens ML- 4 has a larger area than the micro lenses ML- 1 and ML- 1 b , the amount of received light can be easily secured.
- the pixel P- 4 b that is adjacent to the pixel P- 4 on the straight line SL 2 has a photoelectric conversion unit PD- 4 b and a micro lens ML- 4 b .
- the micro lens ML- 4 b includes the photoelectric conversion unit PD- 4 b .
- the micro lens ML- 4 b has a substantially elliptical shape extending along the side SD 1 as viewed in a plan view.
- the micro lens ML- 4 b has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 4 , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 4 b is D- 4 b
- the following Expression 13 is established.
- a length of a minor axis of the micro lens ML- 4 b can be equal to the diameter.
- the center of the optical axis of the micro lens ML- 4 b can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 4 b , as compared with the pixel P- 4 .
- a shift amount of the center of the optical axis of the micro lens ML- 4 b from the barycenter of the photoelectric conversion unit PD- 4 b is SF 4 b , the following Expression 14 is established. SF 4 b>SF 4 Expression 14
- the center of the optical axis of the micro lens ML- 4 b is shifted toward the center CP. Therefore, the micro lens ML- 4 b can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 4 b . Further, because the micro lens ML- 4 b has a larger area than the micro lenses ML- 1 to ML- 4 , the amount of received light can be easily secured.
- the pixel P- 5 arranged at a position farther away from the center CP than the pixels P- 4 and P- 4 b on the straight line SL 2 has a photoelectric conversion unit PD- 5 and a micro lens ML- 5 .
- the micro lens ML- 5 includes the photoelectric conversion unit PD- 5 .
- the micro lens ML- 5 has a substantially elliptical shape extending along the side SD 1 as viewed in a plan view.
- the micro lens ML- 5 has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 4 b , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 5 is D- 5
- the following Expression 15 is established.
- a length of a minor axis of the micro lens ML- 5 can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 5 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 5 , as compared with the pixel P- 4 b .
- a shift amount of the center of the optical axis of the micro lens ML- 5 from the barycenter of the photoelectric conversion unit PD- 5 is SF 5 , the following Expression 16 is established. SF 5> SF 4 b Expression 16
- the center of the optical axis of the micro lens ML- 5 is shifted toward the center CP. Therefore, the micro lens ML- 5 can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 5 . Further, because the micro lens ML- 5 has a larger area than the micro lenses ML- 1 to ML- 4 b , the amount of received light can be easily secured.
- the pixel P- 5 b that is adjacent to the pixel P- 5 on the straight line SL 2 has a photoelectric conversion unit PD- 5 b and a micro lens ML- 5 b .
- the micro lens ML- 5 b includes the photoelectric conversion unit PD- 5 b .
- the micro lens ML- 5 b has a substantially elliptical shape extending along the side SD 1 as viewed in a plan view.
- the micro lens ML- 5 b has a substantially elliptical shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 5 , based on the shape of the micro lens ML- 1 .
- a length of a major axis of the micro lens ML- 5 b is D- 5 b
- the following Expression 17 is established.
- a length of a minor axis of the micro lens ML- 5 b can be equal to the diameter D- 1 of the micro lens ML- 1 .
- the center of the optical axis of the micro lens ML- 5 b can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 5 b as compared with the pixel P- 5 .
- a shift amount of the center of the optical axis of the micro lens ML- 5 b from the barycenter of the photoelectric conversion unit PD- 5 b is SF 5 b
- the following Expression 18 is established.
- the center of the optical axis of the micro lens ML- 5 b is shifted toward the center CP. Therefore, the micro lens ML- 5 b can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 5 b . Further, because the micro lens ML- 5 b has a larger area than the micro lenses ML- 1 to ML- 5 , the amount of received light can be easily secured.
- the shape of the micro lens ML changes to a shape extending in the X direction and the Y direction as moving away from the center CP of the imaging region IR, while maintaining the shape of the micro lens ML in a substantially circular shape.
- the straight line SL 3 extends in a direction intersecting with the X direction and the Y direction (for example, a direction toward the corner CN 1 ) from the center CP of the imaging region IR, and extends along pixels with pixel positions thereof in the X direction and the Y direction being equal.
- FIG. 9 is a plan view illustrating the pixels positioned on the straight line SL 3 .
- the diameter thereof gradually increases as moving away from the center CP of the imaging region IR, while maintaining the shape of the micro lens ML in a substantially circular shape.
- the pixel P- 6 arranged at a position farther away from the center CP than the pixel P- 1 on the straight line SL 3 has a photoelectric conversion unit PD- 6 and a micro lens ML- 6 .
- the micro lens ML- 6 includes the photoelectric conversion unit PD- 6 .
- the micro lens ML- 6 has a substantially circular shape as viewed in a plan view. That is, the micro lens ML- 6 has a substantially circular shape obtained by extending the shape of the micro lens ML- 1 toward the center CP in the X direction and the Y direction, based on the shape of the micro lens ML- 1 .
- D -6> D -1 Expression 19 is established.
- the center of the optical axis of the micro lens ML- 6 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 6 , as compared with the pixel P- 1 .
- a shift amount of the center of the optical axis of the micro lens ML- 1 from the barycenter of the photoelectric conversion unit PD- 1 is SF 1
- a shift amount of the center of the optical axis of the micro lens ML- 6 from the barycenter of the photoelectric conversion unit PD- 6 is SF 6
- the following Expression 20 is established.
- the micro lens ML- 6 can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 6 . Further, because the micro lens ML- 6 has a larger area than the micro lens ML- 1 , the amount of received light can be easily secured.
- the pixel P- 7 arranged at a position farther away from the center CP than the pixel P- 6 on the straight line SL 3 has a photoelectric conversion unit PD- 7 and a micro lens ML- 7 .
- the micro lens ML- 7 includes the photoelectric conversion unit PD- 7 .
- the micro lens ML- 7 has a substantially circular shape as viewed in a plan view.
- the micro lens ML- 7 has a substantially circular shape obtained by extending the shape of the micro lens ML- 1 further toward the center CP than the micro lens ML- 6 in the X direction and the Y direction, based on the shape of the micro lens ML- 1 .
- a diameter of the micro lens ML- 7 is D- 7 , the following Expression 21 is established.
- the center of the optical axis of the micro lens ML- 7 can be shifted further toward the center CP from the barycenter of the photoelectric conversion unit PD- 7 , as compared with the pixel P- 6 .
- a shift amount of the center of the optical axis of the micro lens ML- 7 from the barycenter of the photoelectric conversion unit PD- 7 is SF 7 , the following Expression 22 is established. SF 7> SF 6 Expression 22
- the micro lens ML- 7 can easily collect incident light, which is incident obliquely, on the light-receiving surface of the photoelectric conversion unit PD- 7 . Further, because the micro lens ML- 7 has a larger area than the micro lenses ML- 1 and ML- 6 , the amount of received light can be easily secured.
- the ratio of the length of the major axis to the length of the minor axis gradually increases as approaching from the straight line SL 3 to the straight line SL 1 .
- the ratio of the length of the major axis to the length of the minor axis gradually increases as approaching from the straight line SL 3 to the straight line SL 2 . Accordingly, a large total area of the plurality of micro lenses can be secured as viewed in a plan view (see FIG. 5 and FIG. 10B ).
- FIGS. 10A to 10C Effects of the present embodiment are explained next with reference to FIGS. 10A to 10C .
- the plurality of micro lenses ML is extended toward the center CP and arranged with a larger area as moving away from the center CP of the imaging region IR as viewed in a plan view. Accordingly, in the imaging region IR, even when moving away from the center CP of the imaging region IR, attenuation of the amount of light collected in the photoelectric conversion unit. PD of the pixel P can be suppressed.
- an attenuation width ⁇ BL′ of the luminance level of the pixel signals generated by the photoelectric conversion units PD of the surrounding pixels P with respect to the luminance level of the pixel signals generated by the photoelectric conversion units PD of the pixels P near the center CP can be considerably reduced as compared with an attenuation width ⁇ BL of the basic mode.
- the luminance level of the pixel signals generated by the pixels P near the center CP of the imaging region IR in the present embodiment can be equivalent to the luminance level of the pixel signals generated by the pixels P near the center CP of the imaging region IR in the basic mode.
- the luminance level of the pixel signals generated by the pixels P near the center CP can be maintained, and the luminance level of the pixel signals generated by the surrounding pixels P can be improved, thereby enabling to improve an average luminance level of the image signal.
- the pixel P- 1 arranged near the center CP of the imaging region IR has the micro lens ML- 1 having a substantially circular shape as viewed in a plan view.
- the pixel P- 3 arranged at a position farther away from the center CP of the imaging region IR than the pixel P- 1 has a substantially elliptical shape as viewed in a plan view, and has the micro lens ML- 3 having a larger area than the micro lens ML- 1 .
- the pixel P- 3 is arranged at a position closer to the side SD 1 than the pixel P- 1 in the direction along the side SD 2 of the imaging region IR.
- the micro lens ML- 3 has a substantially elliptical shape extending in the direction along the side SD 2 of the imaging region IR. Accordingly, the shift amount of the center of the optical axis of the micro lens ML- 3 from the barycenter of the photoelectric conversion unit PD- 3 can be increased toward the center CP as compared with the shift amount of the center of the optical axis of the micro lens ML- 1 from the barycenter of the photoelectric conversion unit PD- 1 , thereby enabling to suppress attenuation of the amount of received light of the pixel P- 3 with respect to that of the pixel P- 1 .
- the area of the micro lens ML- 3 is larger than the area of the micro lens ML- 1 , attenuation of the amount of received light of the pixel P- 3 with respect to the pixel P- 1 can be further suppressed from this point of view. As a result, a difference in the amount of received light due to a difference between the incident angle of light to the pixel P- 1 and the incident angle of light to the pixel P- 3 can be reduced, and the amount of received light of the pixel P- 3 can be approximated to the amount of received light of the pixel P- 1 .
- the structures of the pixel P- 1 and the pixel P- 3 are suitable for suppressing occurrence of shading, while improving the average luminance level in the image signal obtained by the solid-state imaging apparatus 5 . That is, according to the present embodiment, the solid-state imaging apparatus 5 suitable for suppressing occurrence of shading, while improving the average luminance level in the image signal can be provided.
- the pixel P- 2 positioned between the pixel P- 1 and the pixel P- 3 has the micro lens ML- 2 having a substantially elliptical shape as viewed in a plan view and having a larger area than the micro lens ML- 1 and a smaller area than the micro lens ML- 3 . Accordingly, the structure of the pixel P- 2 can be made to correspond to a state where the value of the incident angle of light to the pixel P- 2 is between the incident angle of light to the pixel P- 1 and the incident angle of light to the pixel P- 3 .
- the difference in the amount of received light due to a difference between the incident angle of light to the pixel P- 1 , the incident angle of light to the pixel P- 2 , and the incident angle of light to the pixel P- 3 can be reduced, respectively, and the amount of received light of the pixel P- 2 can be approximated to the amount of received light of the pixel P- 1 .
- the shape of the micro lens ML changes from the substantially circular shape to the substantially elliptical shape, and along with a gradual increase in the area of the micro lens ML, the major axis thereof gradually increases as moving away from the center CP of the imaging region IR.
- the shape of the micro lens ML changes from the substantially circular shape to the substantially elliptical shape, and along with a gradual increase in the area of the micro lens ML, the major axis thereof gradually increases as moving away from the center CP of the imaging region IR.
- the diameter thereof gradually increases as moving away from the center CP of the imaging region IR (as approaching the corner CN 1 ), while maintaining the shape of the micro lens ML in a substantially circular shape.
- the ratio of the major axis to the minor axis gradually increases as approaching from the straight line SL 3 to the straight line SL 1 .
- the ratio of the major axis to the minor axis gradually increases as approaching from the straight line SL 3 to the straight line SL 2 .
- the respective structures of the plurality of pixels can be made suitable for the pixel position, and occurrence of shading in the image signal obtained by the solid-state imaging apparatus 5 can be suppressed, while securing the total area of the plurality of micro lenses in a plan view.
- a region taken in a +X direction and a +Y direction (a first quadrant region) based on the center CP in the imaging region IR has been explained as an example, a second quadrant region, a third quadrant region, and a fourth quadrant region can be also formed by folding back the first quadrant region symmetrically. Therefore, explanations thereof will be omitted.
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Abstract
Description
D-1a>D-1
D-2>D-
SF2>
D-2a>D-2
SF2a>SF2
D-3>D-
SF3>
D-3a>D-3
SF3a>SF3 Expression 9
D-1b>D-1
D-4>D-
SF4>
D-4b>D-4
SF4b>SF4 Expression 14
D-5>D-
SF5>
D-5b>D-5
SF5b>SF5
D-6>D-1 Expression 19
SF6>SF1 Expression 20
D-7>D-6 Expression 21
SF7>SF6 Expression 22
Claims (16)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150302710A1 (en) * | 2014-04-17 | 2015-10-22 | Samsung Electronics Co., Ltd. | Dynamic vision sensors and motion recognition devices including the same |
US9497367B1 (en) * | 2015-07-22 | 2016-11-15 | Ic Real Tech, Inc | Maximizing effective surface area of a rectangular image sensor concurrently capturing image data from two lenses |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6506614B2 (en) | 2015-05-14 | 2019-04-24 | キヤノン株式会社 | Solid-state imaging device and camera |
US10566365B2 (en) * | 2015-05-27 | 2020-02-18 | Visera Technologies Company Limited | Image sensor |
KR102558497B1 (en) * | 2018-01-08 | 2023-07-21 | 엘지이노텍 주식회사 | Image sensor |
JP2020155514A (en) * | 2019-03-19 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | Sensor chip and electronic device |
TWI806006B (en) * | 2021-02-20 | 2023-06-21 | 緯創資通股份有限公司 | Thermal image positioning method and system thereof |
KR20230056858A (en) * | 2021-10-20 | 2023-04-28 | 삼성전자주식회사 | Image sensor |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5682203A (en) * | 1992-02-14 | 1997-10-28 | Canon Kabushiki Kaisha | Solid-state image sensing device and photo-taking system utilizing condenser type micro-lenses |
US7199931B2 (en) | 2003-10-09 | 2007-04-03 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
US7227692B2 (en) | 2003-10-09 | 2007-06-05 | Micron Technology, Inc | Method and apparatus for balancing color response of imagers |
US7307788B2 (en) | 2004-12-03 | 2007-12-11 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
US7375892B2 (en) * | 2003-10-09 | 2008-05-20 | Micron Technology, Inc. | Ellipsoidal gapless microlens array and method of fabrication |
US7476562B2 (en) | 2003-10-09 | 2009-01-13 | Aptina Imaging Corporation | Gapless microlens array and method of fabrication |
US7560295B2 (en) | 2003-10-09 | 2009-07-14 | Aptina Imaging Corporation | Methods for creating gapless inner microlenses, arrays of microlenses, and imagers having same |
JP2010062438A (en) | 2008-09-05 | 2010-03-18 | Toshiba Corp | Solid-state imaging device and method of designing the same |
US20100091168A1 (en) * | 2008-10-15 | 2010-04-15 | Olympus Corporation | Solid-state image pickup apparatus, and method of manufacturing solid-state image pickup apparatus |
US20130161774A1 (en) * | 2010-08-24 | 2013-06-27 | Fujifilm Corporation | Solid state imaging device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005057024A (en) * | 2003-08-04 | 2005-03-03 | Matsushita Electric Ind Co Ltd | Solid state imaging device, manufacturing method thereof and camera |
JP2005197379A (en) * | 2004-01-06 | 2005-07-21 | Sony Corp | Solid state imaging device and signal processing circuit |
JP2007103483A (en) * | 2005-09-30 | 2007-04-19 | Sharp Corp | Solid-state imaging apparatus and its manufacturing method, and electronic information device |
JP5277565B2 (en) * | 2007-05-31 | 2013-08-28 | 富士通セミコンダクター株式会社 | Solid-state image sensor |
US8283110B2 (en) * | 2010-06-16 | 2012-10-09 | Visera Technologies Company Limited | Method for fabricating an image sensor device |
-
2013
- 2013-12-03 JP JP2013250492A patent/JP2015109314A/en active Pending
-
2014
- 2014-09-12 US US14/484,516 patent/US9231004B2/en active Active
- 2014-10-21 CN CN201410562096.0A patent/CN104681569A/en active Pending
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5682203A (en) * | 1992-02-14 | 1997-10-28 | Canon Kabushiki Kaisha | Solid-state image sensing device and photo-taking system utilizing condenser type micro-lenses |
US7560295B2 (en) | 2003-10-09 | 2009-07-14 | Aptina Imaging Corporation | Methods for creating gapless inner microlenses, arrays of microlenses, and imagers having same |
US7643213B2 (en) | 2003-10-09 | 2010-01-05 | Aptina Imaging Corporation | Ellipsoidal gapless micro lenses for imagers |
US8795559B2 (en) | 2003-10-09 | 2014-08-05 | Micron Technology, Inc. | Method for forming imagers |
US7375892B2 (en) * | 2003-10-09 | 2008-05-20 | Micron Technology, Inc. | Ellipsoidal gapless microlens array and method of fabrication |
US7428103B2 (en) | 2003-10-09 | 2008-09-23 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
US7476562B2 (en) | 2003-10-09 | 2009-01-13 | Aptina Imaging Corporation | Gapless microlens array and method of fabrication |
US7227692B2 (en) | 2003-10-09 | 2007-06-05 | Micron Technology, Inc | Method and apparatus for balancing color response of imagers |
US7199931B2 (en) | 2003-10-09 | 2007-04-03 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
US7307788B2 (en) | 2004-12-03 | 2007-12-11 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
JP2009506383A (en) | 2005-08-30 | 2009-02-12 | マイクロン テクノロジー, インク. | Oval microlens for imager with no gap |
JP2010062438A (en) | 2008-09-05 | 2010-03-18 | Toshiba Corp | Solid-state imaging device and method of designing the same |
US8274123B2 (en) | 2008-09-05 | 2012-09-25 | Kabushiki Kaisha Toshiba | Solid-state imaging device and solid-state imaging device designing method |
US8754493B2 (en) | 2008-09-05 | 2014-06-17 | Kabushiki Kaisha Toshiba | Solid-state imaging device and solid-state imaging device designing method |
US20100091168A1 (en) * | 2008-10-15 | 2010-04-15 | Olympus Corporation | Solid-state image pickup apparatus, and method of manufacturing solid-state image pickup apparatus |
US20130161774A1 (en) * | 2010-08-24 | 2013-06-27 | Fujifilm Corporation | Solid state imaging device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150302710A1 (en) * | 2014-04-17 | 2015-10-22 | Samsung Electronics Co., Ltd. | Dynamic vision sensors and motion recognition devices including the same |
US9497367B1 (en) * | 2015-07-22 | 2016-11-15 | Ic Real Tech, Inc | Maximizing effective surface area of a rectangular image sensor concurrently capturing image data from two lenses |
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CN104681569A (en) | 2015-06-03 |
US20150156431A1 (en) | 2015-06-04 |
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