US6251545B1 - Method and system for improving transmission of light through photomasks - Google Patents
Method and system for improving transmission of light through photomasks Download PDFInfo
- Publication number
- US6251545B1 US6251545B1 US09/357,422 US35742299A US6251545B1 US 6251545 B1 US6251545 B1 US 6251545B1 US 35742299 A US35742299 A US 35742299A US 6251545 B1 US6251545 B1 US 6251545B1
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- US
- United States
- Prior art keywords
- reflection coating
- light
- photomask substrate
- photomask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Definitions
- the present invention relates to semiconductor fabrication, and more particularly to lithography in semiconductor fabrication.
- Lithography is conventionally used in the fabrication of semiconductor devices.
- a photosensitive film a photoresist
- the photomask has areas composed of chrome, or some other opaque or partially transmitting material, in a pattern which corresponds to the desired circuitry for the device.
- the photomasked photoresist is exposed to light from a light source. After exposure, the photomask is removed, leaving a photoresist with the desired pattern.
- An etch or implantation of the device's substrate may be performed based upon the photoresist pattern.
- FIG. 1 illustrates a conventional photomask 110 and photoresist 130 as used in lithography.
- the photomask 1 10 may comprise fused silica.
- On the bottom side of the photomask 110 are areas 120 .
- the photomask 110 and photoresist 130 are treated with light from a light source (not shown). The light shines through the photomask 110 where there are no areas 120 . The light is reflected or absorbed where there are areas 120 .
- Some of the light that passes through the photomask 110 continues through a lens 140 , which projects an image of the mask pattern onto the photoresist 130 , which undergoes a chemical reaction when exposed to light. Portions of the photoresist 150 are exposed to the light while portions of the photoresist 160 are ideally not exposed to the light.
- the present invention addresses such a need.
- the present invention provides a method and system for improving the transmission of light through a photomask.
- the method includes providing a photomask substrate, and applying at least one anti-reflection coating to at least one side of the photomask substrate.
- the anti-reflection coating reduces the loss of light during lithography due to reflections. This increases the efficiency of the lithography.
- the method and system has the added advantage of reducing the amount of undesired exposure of a photoresist.
- FIG. 1 illustrates a conventional photomask and photoresist as used in lithography.
- FIG. 2 is a flow chart illustrating a method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 3 is a flow chart illustrating a first preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 4 illustrates a photomask blank provided by the first preferred embodiment of the method illustrated in FIG. 3 in accordance with the present invention.
- FIG. 5 is a flow chart illustrating a second preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 6 illustrates a photomask blank provided by the second preferred embodiment of the method illustrated in FIG. 5 in accordance with the present invention.
- FIG. 7 is a flow chart illustrating a third preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 8 illustrates a photomask blank provided by the third preferred embodiment of the method illustrated in FIG. 7 in accordance with the present invention.
- FIG. 9 is a flow chart illustrating a fourth preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 10 illustrates a photomask blank provided by the fourth preferred embodiment of the method illustrated in FIG. 9 in accordance with the present invention.
- the present invention relates to a system and method for improving the transmission of light through photomasks.
- the following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements.
- Various modifications to the preferred embodiment and the generic principles and features described herein will be readily apparent to those skilled in the art.
- the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein.
- FIG. 2 is a flow chart illustrating a method for improving the transmission of light through photomasks in accordance with the present invention.
- a photomask substrate is provided, via step 210 .
- the photomask substrate may be comprised of fused silica or some other material.
- an anti-reflection coating is applied to at least one side of the photomask substrate, via step 220 .
- An attenuating film may then be applied to one side, forming a photomask blank.
- the photomask blank is then patterned to form the photomask. Light transmitted through the silica with the anti-reflection coating(s) suffer less loss of light due to reflections. This increases the efficiency of the lithography.
- the anti-reflection coating can be a single film, usually comprised of materials, such as CaF 2 , MgF 2 , DyF 3 , LaF 3 , Na 3 AlF 6 , YF 3 , and AIM 2 O 3 , although not limited to these materials.
- the anti-reflection coating may also be a multilayer film comprised of these and other materials, sometimes along with SiO 2 .
- n is the index of refraction of the material.
- n 1.5-1.7 for wavelengths between 248 nm and 157 nm, which is the wavelength range of interest for lithography. Accordingly, the reflection from a single surface of the fused silica is 4%-7%. In a lithography application, between 8% and 14% of the light is lost from simple reflections from the two surfaces of the photomask. The application of anti-reflection coating(s) can reduce this reflectance to less than 0.5% per surface. This can enhance lithography productivity significantly.
- FIG. 3 is a flow chart illustrating a first preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 4 illustrates a photomask blank provided by the first preferred embodiment of the method as illustrated in FIG. 3 .
- a photomask substrate 410 is provided, via step 310 .
- the photomask substrate 410 may be comprised of fused silica and has a first (top) side and a second (bottom) side.
- Anti-reflection coatings 420 and 430 are applied to the first and second sides of the photomask substrate 410 respectively, via step 320 .
- an attenuating or opaque film 440 may be provided on top of the anti-reflection coating 420 on the first side, via step 330 .
- the attenuating film 440 is patterned in correspondence to the desired circuitry for the device. In the first preferred embodiment, reflections from both sides of the photomask are decreased.
- FIG. 5 is a flow chart illustrating a second preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 6 illustrates a photomask blank provided by the second preferred embodiment of the method as illustrated in FIG. 5 .
- a photomask substrate 610 is provided, via step 510 .
- An anti-reflection coating 620 is applied to the second side of the photomask substrate 610 , via step 520 .
- an attenuating film 630 is provided on the first side of the photomask substrate 610 , via step 530 .
- the integrity of the attenuating film 630 is maintained while reflections from the second side of the photomask substrate 610 are decreased.
- the efficiency of the lithography is still improved over conventional photomasks with the second preferred embodiment.
- FIG. 7 is a flow chart illustrating a third preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 8 illustrates a photomask blank provided by the third preferred embodiment of the method as illustrated in FIG. 7 .
- a photomask substrate 810 is provided, via step 710 .
- An anti-reflection coating 820 is applied to the first side of the photomask substrate 810 , via step 720 .
- an attenuating film 830 may be provided on the anti-reflection coating 820 , via step 730 .
- reflections from the first side of the photomask substrate 810 are decreased. Because there is no anti-reflection coating on the second side, there is no cause for concern about scratching the coating. The efficiency of the lithography is still improved over conventional photomasks with the third preferred embodiment.
- FIG. 9 is a flow chart illustrating a fourth preferred embodiment of the method for improving the transmission of light through photomasks in accordance with the present invention.
- FIG. 10 illustrates a photomask provided by the fourth preferred embodiment of the method as illustrated in FIG. 9 .
- a photomask substrate 1010 is provided, via step 910 .
- Anti-reflection coatings 1020 and 1030 are applied to the first and second sides of the photomask substrate 1010 respectively, via step 920 .
- the anti-reflecting coating 1030 also serves as the alternating phase-shifting film. Then, an attenuating film 1040 may be provided on the alternating phase-shifting film 1030 , via step 930 .
- n 2 ⁇ k + 1 2 ⁇ k - 1
- a method and system for improving the transmission of light through photomasks has been disclosed.
- the method and system applies at least one anti-reflection coating to a side of the photomask.
- the anti-reflection coating reduces the loss of light during lithography due to reflections. This increases the efficiency of the lithography.
- the method and system with the exception of the second embodiment, has the added advantage of reducing the amount of undesired exposure of a photoresist due to scatter.
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/357,422 US6251545B1 (en) | 1999-07-20 | 1999-07-20 | Method and system for improving transmission of light through photomasks |
US09/742,970 US6627355B2 (en) | 1999-07-20 | 2000-12-20 | Method of and system for improving stability of photomasks |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/357,422 US6251545B1 (en) | 1999-07-20 | 1999-07-20 | Method and system for improving transmission of light through photomasks |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/742,970 Continuation-In-Part US6627355B2 (en) | 1999-07-20 | 2000-12-20 | Method of and system for improving stability of photomasks |
Publications (1)
Publication Number | Publication Date |
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US6251545B1 true US6251545B1 (en) | 2001-06-26 |
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Family Applications (1)
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US09/357,422 Expired - Lifetime US6251545B1 (en) | 1999-07-20 | 1999-07-20 | Method and system for improving transmission of light through photomasks |
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US (1) | US6251545B1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003038522A1 (en) * | 2001-10-26 | 2003-05-08 | Corning Incorporated | Anti-reflective coating on a photomask |
US20040063001A1 (en) * | 2002-09-30 | 2004-04-01 | Wu Wei E. | Method of making an integrated circuit using a photomask having a dual antireflective coating |
US6797439B1 (en) * | 2001-03-30 | 2004-09-28 | Schott Lithotec Ag | Photomask with back-side anti-reflective layer and method of manufacture |
WO2007039161A1 (en) * | 2005-09-27 | 2007-04-12 | Schott Ag | Mask blanc and photomasks having antireflective properties |
US20100129736A1 (en) * | 2008-06-17 | 2010-05-27 | Kasprowicz Bryan S | Photomask Having A Reduced Field Size And Method Of Using The Same |
WO2011011332A1 (en) * | 2009-07-21 | 2011-01-27 | Ultra Communications, Inc. | Patterned backside optical coating on transparent substrate |
US20110086511A1 (en) * | 2009-06-17 | 2011-04-14 | Kasprowicz Bryan S | Photomask having a reduced field size and method of using the same |
US8871102B2 (en) | 2011-05-25 | 2014-10-28 | Western Digital (Fremont), Llc | Method and system for fabricating a narrow line structure in a magnetic recording head |
US9034564B1 (en) | 2013-07-26 | 2015-05-19 | Western Digital (Fremont), Llc | Reader fabrication method employing developable bottom anti-reflective coating |
US9431040B1 (en) | 2009-09-16 | 2016-08-30 | Western Digital (Fremont), Llc | Magnetic recording transducer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279911A (en) * | 1990-07-23 | 1994-01-18 | Mitsubishi Denki Kabushiki Kaisha | Photomask |
US5422206A (en) * | 1991-05-24 | 1995-06-06 | Mitsubishi Denki Kabushiki Kaisha | Photomask and method of manufacturing the same |
US5780161A (en) * | 1996-11-06 | 1998-07-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming the reticle |
US5879866A (en) * | 1994-12-19 | 1999-03-09 | International Business Machines Corporation | Image recording process with improved image tolerances using embedded AR coatings |
-
1999
- 1999-07-20 US US09/357,422 patent/US6251545B1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279911A (en) * | 1990-07-23 | 1994-01-18 | Mitsubishi Denki Kabushiki Kaisha | Photomask |
US5422206A (en) * | 1991-05-24 | 1995-06-06 | Mitsubishi Denki Kabushiki Kaisha | Photomask and method of manufacturing the same |
US5879866A (en) * | 1994-12-19 | 1999-03-09 | International Business Machines Corporation | Image recording process with improved image tolerances using embedded AR coatings |
US5780161A (en) * | 1996-11-06 | 1998-07-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming the reticle |
Non-Patent Citations (2)
Title |
---|
"Characteristics of Deep UV Optics at 193nm & 157 nm," Glen P. Callahan and Bruce K. Flint 1998. |
GLEN P. CALLAHAN; BRUCE K. FLINT: "Characteristics of Deep UV Optics at 193nm & 157 nm", PROCEEDINGS OF SPIE, SPIE, vol. 3578, 7 April 1999 (1999-04-07), pages 45 - 53, XP009534208, ISSN: 0277-786X, DOI: 10.1117/12.344438 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6797439B1 (en) * | 2001-03-30 | 2004-09-28 | Schott Lithotec Ag | Photomask with back-side anti-reflective layer and method of manufacture |
WO2003038522A1 (en) * | 2001-10-26 | 2003-05-08 | Corning Incorporated | Anti-reflective coating on a photomask |
US20040063001A1 (en) * | 2002-09-30 | 2004-04-01 | Wu Wei E. | Method of making an integrated circuit using a photomask having a dual antireflective coating |
WO2007039161A1 (en) * | 2005-09-27 | 2007-04-12 | Schott Ag | Mask blanc and photomasks having antireflective properties |
US20100129736A1 (en) * | 2008-06-17 | 2010-05-27 | Kasprowicz Bryan S | Photomask Having A Reduced Field Size And Method Of Using The Same |
US9005848B2 (en) | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
US20110086511A1 (en) * | 2009-06-17 | 2011-04-14 | Kasprowicz Bryan S | Photomask having a reduced field size and method of using the same |
US9005849B2 (en) | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
WO2011011332A1 (en) * | 2009-07-21 | 2011-01-27 | Ultra Communications, Inc. | Patterned backside optical coating on transparent substrate |
US9431040B1 (en) | 2009-09-16 | 2016-08-30 | Western Digital (Fremont), Llc | Magnetic recording transducer |
US8871102B2 (en) | 2011-05-25 | 2014-10-28 | Western Digital (Fremont), Llc | Method and system for fabricating a narrow line structure in a magnetic recording head |
US9034564B1 (en) | 2013-07-26 | 2015-05-19 | Western Digital (Fremont), Llc | Reader fabrication method employing developable bottom anti-reflective coating |
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