US4768193A - Semiconductor memory device having error correction function and incorporating redundancy configuration - Google Patents
Semiconductor memory device having error correction function and incorporating redundancy configuration Download PDFInfo
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- US4768193A US4768193A US06/863,608 US86360886A US4768193A US 4768193 A US4768193 A US 4768193A US 86360886 A US86360886 A US 86360886A US 4768193 A US4768193 A US 4768193A
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- main memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
Definitions
- the present invention is directed to a semiconductor memory device having an error correction function and incorporating a redundancy configuration, thereby correcting both a soft error and a hard error.
- a semiconductor memory device includes a large number of memory cells arranged along rows and columns which are orthogonal to each other.
- a density of defects generated in such a semiconductor memory device during manufacturing is relatively independent of the integration density of the device, but is dependent on semiconductor manufacturing technology. Therefore, the higher the integration density of the device, the greater the ratio of the number of normal memory cells to that of defective memory cells. This is one of the advantages obtained by increasing the integration density of a semiconductor memory device. Nevertheless, if the device includes even only one defective memory cell, which is called a hard error cell, the device cannot operate normally, and therefore, the device is scrapped.
- a semiconductor memory device in which a redundancy memory cell array is incorporated with a main memory cell matrix along rows or columns thereof has been developed.
- the redundancy memory cell array is used instead of a row memory cell array or a column memory cell array including the hard error cell. Accordingly, in a semiconductor memory device including such a redundancy memory cell array, the manufacturing yield thereof can be improved. Note that this redundancy technique can be applied only to previously determined hard errors. That is, once hard error cells are determined, other errors cannot be corrected after the determination of the hard error cells.
- the above-mentioned redundancy technique can be combined with the improved ECC technique to enable the correction of not only the previously determined hard errors but also soft errors or hard errors caused after the determination of the previously determined hard errors.
- the two-dimensional virtual matrix parity-checking has a predetermined logic for outputting data in response to a selected memory cell, it is impossible to simply replace a defective row or column with the redundancy row or column. Therefore, unless a great number of circuit elements for preventing the previously determined defective hard errors from entering the two-dimensional virtual matrix are used, it is difficult to combine the redundancy technique with the improved ECC technique.
- a semiconductor memory device comprises a main memory cell array including a plurality of rows of cell arrays. Each row corresponds to a two-dimensional virtual matrix configuration.
- a redundancy memory cell array is also included having a plurality of rows of redundancy memory cells. Each row corresponds to one horizontal or vertical group of memory cells of the virtual matrix configuration.
- ECC error checking and correcting
- FIGS. 1A and 1B are a circuit diagram of a prior art semiconductor memory device incorporating an ECC circuit
- FIG. 2 is diagram of one two-dimensional virtual matrix configuration in FIG. 1;
- FIGS. 3A and 3B are a circuit diagram of a semiconductor memory device incorporating an ECC circuit and a redundancy configuration according to the present invention
- FIGS. 4A and 4B are a circuit diagram of an embodiment of the semiconductor memory device incorporating an ECC circuit and a redundancy configuration according to the present invention
- FIG. 5 is a diagram of one two-dimensional virtual matrix configuration in FIG. 4;
- FIGS. 6A and 6B are a circuit diagram of another embodiment of the semiconductor memory device incorporating an ECC circuit and a redundancy configuration according to the present invention.
- FIG. 7 is a diagram of one two-dimensional virtual matrix configuration in FIG. 6;
- FIG. 8 is a circuit diagram of a portion of the ECC circuit in FIG. 6 necessary a horizontal parity check operation
- FIG. 9 is a circuit diagram of portion of the ECC circuit in FIG. 6 necessary a vertical parity check operation.
- FIG. 10 is a circuit diagram of the data selector, the redundancy data selector, and the column decoders in FIG. 6.
- FIGS. 1 and 2 Before describing the embodiments of the present invention, a prior art semiconductor memory device incorporating an ECC circuit will be explained with reference to FIGS. 1 and 2.
- reference MCA designates a main memory cell array including 1 Mbit memory cells at intersections between word lines WL 0 , WL 1 , . . . , and WL 1023 and bit lines BL 0 , BL 1 , . . . , BL 1023 .
- the word lines WL 0 , WL 1 , . . . , WL 1023 are selected by row address decoders RDEC, which receive row address signals RA 0 to RA 9 and their inverted signals RA 0 to RA 9 from the address buffers and the multiplexers (not shown).
- BL 1023 are selected by a data selector DSEL controlled by column address decoders CDEC, which receive column address signals CA 0 to CA 9 and their inverted signals CA 0 to CA 9 from address buffers and multiplexers (not shown).
- a data selector DSEL controlled by column address decoders CDEC, which receive column address signals CA 0 to CA 9 and their inverted signals CA 0 to CA 9 from address buffers and multiplexers (not shown).
- one memory cell such as MC 00 is accessed and data is read out via the data selector DSEL to an exclusive OR circuit G.sub. 1, which serves as an error correcting circuit, thereby obtaining output data D out .
- a horizontal selector HSEL, a vertical selector VSEL, a horizontal parity cell array HPA, a horizontal parity selector HPSEK, a vertical parity cell array VPA, a vertical parity selector VPSEL, a horizontal parity generator HPG, a vertical parity generator VPG, and a comparator circuit CMP are provided to form an ECC circuit.
- the horizontal and vertical selectors HSEL and VSEL are controlled by horizontal and vertical decoders HDEC and VDEC, respectively, and the horizontal and vertical parity selectors HPSEL and VPSEL are controlled by horizontal and vertical parity decoders HPDEC and VPDEC, respectively.
- the decoders HPDEC and VPDEC are of the same type as the decoders HDEC and VDEC, respectively.
- the main memory cell array MCA is divided into a plurality of submemory cell arrays each of which is, for example, comprised of k ⁇ m memory cells connected to each word line. Simultaneously with the selection of one submemory cell array, i.e., one word line such as WL 0 , data is read out of (k+m) memory cells by the horizontal and vertical selectors HSEL and VSEL.
- the horizontal and vertical selectors HSEL and VSEL virtually (or logically) rearrange the data of all k ⁇ m memory cells connected to a selected word line into a parity-checking two-dimensional matrix (H-V matrix) with k bits in the horizontal (row) direction and m bits in the vertical (column) direction, as shown in FIG. 2.
- the horizontal parity bits HP 0 , HP 1 , . . . , and HP 31 and the vertical parity bits VP 0 , VP 1 , . . . , and VP 31 are arranged on the same word line WL 0 as indicated by HP and VP.
- reference HSG designates a horizontal selection gate for selecting k-bit data on a selected row of the H-V matrix including a selected memory cell MC i .
- reference VSG designates a vertical selection gate for selecting m-bit data on a selected column of the H-V matrix including the selected memory cell MC i (i.e., see the dotted lines in FIG. 2).
- the selected k-bit data from the horizontal selection gate HSG is supplied to the horizontal parity generator HPG, which generates a horizontal parity HP i ' for the k-bit data.
- the selected m-bit data from the vertical selection gate VSG is supplied to the vertical parity generator VPG, which generates a vertical parity VP i ' for the m-bit data.
- the horizontal and vertical parity cell arrays HPA and VPA consists of parity cells each storing correct horizontal and vertical parities, respectively.
- the correct parities have been previously written into the parity cells during a writing of data into all of the memory cells MC in the main memory cell array MCA.
- the comparator circuit CMP consists of an exclusive OR circuit G 2 for comparing the horizontal parity HP i ' from the horizontal parity generator HPG with the correct horizontal parity HP i from the horizontal parity cell array HPA, and an exclusive OR circuit G 3 for comparing the vertical parity VP i ' from the vertical parity generator VPG with the correct vertical parity VP i from the vertical parity cell array VPA.
- the comparator circuit CMP further includes an AND circuit G 4 connected to the outputs of the exclusive OR circuits G 2 and G 3 .
- each of the k signal lines and m signal lines from the horizontal selector HSEL and the vertical selector VSEL and the like shown in FIG. 1 has a pair of lines to produce differential outputs. However, these pairs of lines are denoted by one line for simplicity.
- the error correction function of the above-described H-V matrix is effective not only for a soft error due to ⁇ rays but also for a hard error caused by a hard defect of a memory cell or for a bit line defect.
- the error is correctable for only one bit in the memory cells belonging to a common horizontal or vertical parity group. That is, an error can be corrected only when a single bit in any H-V parity check data group in the above-mentioned H-V matrix is in error.
- a redundancy technique for remedying hard errors and for improving the yield is well known.
- a row or column redundancy i.e., a redundant word line or bit line
- the conventional technique can be combined with the redundancy technique without difficulty.
- Hard defects along a predetermined defective word line or bit line can be remedied by the redundancy technique, and a soft error or a hard error caused after the determination of the defective word line or bit line can be realized by means of the two-dimensional parity checking using the above-mentioned H-V matrix.
- a defective row or column data must be inhibited from mixing with a row-data or column-data group from which a parity is to be taken, and the defective row or column data must be replaced by the redundant row or column data. Since the location of the generation of the defective row or column is indefinite, the correspondence between the redundant row or column and the H-V matrix is difficult to establish without assembling a switching control circuit. Thus, a great number of circuit elements is necessary to realize this very complex logic.
- the inventor has, however, already proposed a semiconductor memory device which combines the two-dimensional parity checking technique with the redundancy technique, as illustrated in FIG. 3.
- a redundancy column cell array RCA is provided for redundancy bits. Also provided are inhibit circuits IHC 0 to IHC 3 , exclusive OR circuits G 5 and G 6 , a multiplexer MPX, and an inhibit control circuit CTL are added to the elements of FIG. 1.
- the inhibit circuit IC 1 has the sme configuration as the inhibit circuit IC 0 .
- the horizontal parity generator HPG and the vertical parity generator VPG perform a parity calculating operation upon k bits (row data) and m-bits (column data) except for the defective bit.
- the parity bits of the parity generators HPG and VPG are supplied to inputs of the exclusive OR circuits G 5 and G 6 , respectively.
- the word lines WL 0 , WL 1 , . . . , and WL 1023 are arranged not only on the memory cell array MCA, but also on the redundancy cell array RCA. Therefore, when one word line for the main memory cell array MCA is selected, one cell of the redundancy memory cell array RCA is also selected.
- a signal RAS k and/or a signal RAS m is made L (low level).
- data of the redundancy cell passes through the inhibit circuit IHC 2 and/or IHC 3 and is supplied to an input of the exclusive OR circuit G 5 and/or G 6 .
- Parity check operations are performed upon all of the cells of a row and a column including a selected cell, and as a result, in the exclusive OR circuits G 2 and G 3 of the comparator circuit CMP, the obtained parities HP i ' and VP i ' are compared with the correct parities HP i and VP i read out of the parity cell arrays HPA and VPA, respectively.
- the inhibit circuits IHC 0 and IHC 1 are in a through state, and the circuits IHC 2 and IHC 3 produce a low level signal, so that the exclusive OR circuits G 5 and G 6 are in a through state.
- the device of FIG. 3 in this state is the same as the device of FIG. 1.
- the defective cell is replaced with a redundancy cell of the redundancy memory cell array RCA by the inhibit circuits IC 0 to IC 3 , and similar parity check operations to those in FIG. 1 are carried out.
- a bit hard error and a bit soft error can be detected and corrected.
- the inhibit control circuit CTL comprises a read only memory (ROM) for storing an address of a defective cell, an inhibit signal generator circuit, and the like, and receives the column address signals CA 0 to CA 9 and their inverted signals CA 0 to CA 9 from the address buffers and the multiplexers (not shown) to produce the signals IS k , IS m , RAS k , RAS m , and S.
- the signals IS k and IS m are outputs of circuits for comparing a row component and a column component of a memory access address with a row address and a column address, respectively, indicating a defective cell. If one of the row address and the column address coincides with the memory access address, the corresponding circuit generates a high level.
- the signals RAS k and RAS m are obtained by the signals IS k and IS m .
- the inhibit control circuit CTL also generates the signal S for operating a multiplex MPX when a defective cell is accessed.
- read data is, in this case, obtained from the redundancy cell array RCA, not from the main memory cell array MCA.
- FIG. 4 which is an embodiment according to the present invention, includes a redundancy memory cell array RCA', a redundancy horizontal selector RHSEL, a redundancy vertical selector RVSEL, a switch SW, and fuses F', F 0 ', F 1 ', . . . , and F 31 ' added to the elements of FIG. 1.
- the redundancy horizontal selector RHSEL like the horizontal selector HSEL, is controlled by horizontal decoders HDEC'
- the redundancy vertical selector VHSEL like the vertical selector VSEL, is controlled by vertical decoders VDEC'.
- the switch SW which may be constructed by a pair of transistors, is controlled by the vertical decoders VDEC'.
- the horizontal parity cell array HPA incorporates a redundancy horizontal parity cell array for the redundancy cell array RCA' as indicated by portions marked with a diagonal cross.
- the redundancy memory cell array RCA' comprises a plurality of rows, each of which corresponds to one horizontal or vertical array of an H-V matrix configuration. That is, as illustrated in FIG. 5, a one bit redundancy cell is not provided for each word line, but a row or column of redundancy cells are provided for one row or one column of the H-V matrix prepared by the ECC circuit of a horizontal and vertical parity checking system.
- reference HV designates a parity corresponding to the horizontal parities HP 0 , HP 1 , . . . , HP 31 , and vertical parities VP 0 , VP 1 , . . . , and VP 31 .
- parities HP 0 to HP 31 and VP 0 to VP 31 are added, and an error detection of the horizontal and vertical parity bits can be carried out by the least significant bit of the sum, i.e., the odd parity or even parity thereof.
- a detailed explanation regarding the parity HV is, however, omitted.
- redundancy cells RC connected to one word line such as WL 0 are provided as a horizontal (row) array for the H-V matrix, however, such redundancy cells RC can be provided as a vertical (column) array. Such a provision does not give rise to a problem.
- the horizontal decoders HDEC' serve as the horizontal parity decoders HPDEC
- the vertical decoders VDEC' serve as the vertical parity decoders VPDEC. Therefore, the horizontal parity decoders HPDEC and the vertical parity decoders VPDEC can be deleted, and simultaneously, the cells of the horizontal parity cell array HPA can be incorporated into each row of each H-V matrix of the main memory cell array MCA and each row of the redundancy memory cell RCA', as shown in FIGS. 6 and 7.
- each column group CG 0 to CG 31 includes not only k memory cells, but also a redundancy horizontal parity HP 0 to HP 31 .
- the row of the redundancy cells RC incorporates the horizontal parity RHP thereof.
- a row address and a column address are previously written into fuse-type ROMs of the horizontal decoders HDEC' and the vertical decoders VDEC', and the fuses F', F 0 ', F 1 ', . . . , and F 31 '.
- a selected memory cell is a predetermined defective cell, such a selected memory cell is replaced with the corresponding redundancy memory cell within the redundancy cell array RCA'.
- the horizontal parity generator HPG performs a parity calculation upon the corresponding row of the redundancy cell array RCA'.
- the predetermined defective cell is replaced with the corresponding bit of the redundancy cell array RCA'.
- the vertical parity generator VPG performs a parity calculation upon the vertical array (column) of the H-V matrix in which only the defective cell is replaced with the corresponding cell of the redundancy cell array RCA'.
- the switch SW is turned ON, while the corresponding fuse is previously blown.
- the post stages of the horizontal parity generator HPG and the vertical parity generator VPG are the same as those of FIG. 1.
- the horizontal decoders HDEC comprise decoders DEC1 which receive an upper five bits CA 5 to CA 9 (CA 5 to CA 9 ) of the column address signals and select one of the column groups CG 0 , CG 1 , . . . , and CG 31 via the horizontal selector HSEL, a ROM1 of a fuse type for storing a horizontal address (row address) HR of an H-V matrix corresponding to a defective memory cell, and a comparator CMP1 for comparing the upper five bits of the column address signals with the content of the ROM1.
- the horizontal decoders HDEC also comprise fuses F 1 , F 2 , . . . , and F 31 corresponding to the column groups CG 0 , CG 1 , . . . , and CG 31 , respectively.
- the vertical decoders VDEC comprise decoders DEC2 which receive the lower five bits CA 0 to CA 4 (CA 0 to CA 4 ) of the column address signals and select one bit line of each of the column groups CG 0 , CG 1 , . . . , and CG 31 via the vertical selector VSEL, a ROM2 of a fuse type for storing a vertical address (column address) VR of an H-V matrix corresponding to a defective memory cell, and a comparator CMP2 for comparing the lower five bits of the column address signals with the content of the ROM2.
- decoders DEC2 which receive the lower five bits CA 0 to CA 4 (CA 0 to CA 4 ) of the column address signals and select one bit line of each of the column groups CG 0 , CG 1 , . . . , and CG 31 via the vertical selector VSEL, a ROM2 of a fuse type for storing a vertical address (column address) VR of
- Selection of a memory cell is conventionally carried out by the row decoders RDEC and the column decoders CDEC. That is, if a defective cell does not exist, one word line is selected by the row decoders RDEC, and one bit line, i.e., one selection gate of the data selector DSEL, is selected by the column decoders CDEC, thereby selecting a memory cell within the main memory cell array MCA.
- data is not written into the ROM1 of the horizontal decoders HDEC and the ROM2 of the vertical decoders VDEC, and the fuses F 0 , F 1 , . . . , and F 31 , F 0 ', F 1 ', . . . , and F 31 ' are unblown, but the fuse F' is blown.
- a row address (horizontal address) HR and a column address (vertical address) VR of an H-V matrix for this defective cell are written into the fuse type ROM1 and ROM2 of the horizontal decoders HDEC and the vertical decoders VDEC, and in addition, into one of the fuses F 0 , F 1 , . . . , and F 31 corresponding to the horizontal address HR and into one of the fuses F 0 ', F 1 ', . . . , and F 31 ' corresponding to the vertical address VR. Therefore, referring to FIG.
- both of the comparator circuits CMP1 and CMP2 generate a logic "1", so that the switch SW is turned ON, while the column decoders CDEC are disabled.
- the decoders DEC2 select one selection gate of the redundancy horizontal selector RHSEL. As a result, the selective memory cell is replaced with the corresponding redundancy cell within the redundancy cell array RCA'.
- the decoders DEC1 select the blown fuse such as F 2 , so that no column groups are selected, and instead, the comparator circuit CMP1 selects the redundancy cells RC via the redundancy horizontal selector RHSEL, so that the data read out of the redundancy cells RC is applied to the horizontal parity generator HPG.
- the decoders DEC2 always select one bit line of each column group and one bit line of the redundancy cell array RCA, the column group such as CG 1 connected to the blown fuse F 1 ' is removed, and instead, the data of the redundancy cells RC is applied to the vertical parity generator VPG. Thus, data of a defective cell is replaced with data of the corresponding redundancy cell(s) for an H-V parity check.
- the switching means since a horizontal array (row) or a vertical array (column) of a matrix constructed by the H-V parity system is replaced by redundancy cells, the switching means becomes simple, thereby reducing the manufacturing costs.
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JP60104632A JPS61264599A (ja) | 1985-05-16 | 1985-05-16 | 半導体記憶装置 |
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US20140006902A1 (en) * | 2012-06-29 | 2014-01-02 | SK Hynix Inc. | Semiconductor device including ecc circuit |
US8996956B2 (en) * | 2012-06-29 | 2015-03-31 | SK Hynix Inc. | Semiconductor device including ECC circuit |
US20140317469A1 (en) * | 2013-04-19 | 2014-10-23 | Young-Soo Sohn | Memory device for performing error correction code operation and redundancy repair operation |
US9626244B2 (en) * | 2013-04-19 | 2017-04-18 | Samsung Electronics Co., Ltd. | Memory device for performing error correction code operation and redundancy repair operation |
US9875155B2 (en) | 2013-04-19 | 2018-01-23 | Samsung Electronics Co., Ltd. | Memory device for performing error correction code operation and redundancy repair operation |
US10020822B2 (en) * | 2014-07-21 | 2018-07-10 | Rensselaer Polytechnic Institute | Error tolerant memory system |
Also Published As
Publication number | Publication date |
---|---|
JPS61264599A (ja) | 1986-11-22 |
EP0202873A3 (en) | 1988-08-03 |
KR910000737B1 (ko) | 1991-02-06 |
DE3684509D1 (de) | 1992-04-30 |
EP0202873A2 (de) | 1986-11-26 |
KR860009430A (ko) | 1986-12-22 |
EP0202873B1 (de) | 1992-03-25 |
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