US4400800A

US4400800A - Semiconductor RAM device

Info

Publication number: US4400800A
Application number: US06/210,663
Authority: US
Inventors: Setsuo Kurafuji
Original assignee: Fujitsu Ltd
Current assignee: Fujitsu Ltd
Priority date: 1979-11-29
Filing date: 1980-11-26
Publication date: 1983-08-23
Anticipated expiration: 2000-11-26
Also published as: EP0031995A2; JPS5677982A; JPS59915B2; EP0031995B1; IE802439L; CA1174762A; DE3071458D1; EP0031995A3; IE51438B1

Abstract

A static type semiconductor RAM device comprising a latch circuit at every column which detects, amplifies and temporarily memorizes a read-out signal from each of the memory cells in the corresponding column and which has a large drive capacity. In the static type RAM device according to the present invention, each of the memory cells is used as an element which only holds information, and data bus lines are driven by the latch circuits having a large drive capacity, so that the slow down of the read-out speed and the decrease of reliability of read-out data of the static type RAM device having a large memory capacity is prevented.

Description

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to a semiconductor RAM (Random Access Memory) device, more particularly to a static type RAM device which has a high read-out speed and a high reliability of read-out data.

(2) Description of the Prior Art

In recent years, the memory capacity and thus the integration, density of semiconductor memory devices has become very large. This is because it has become possible to make a great number of elements of very small size on one chip, due to recent technical developments in integrated circuitry. In a semiconductor memory device such as a static-type semiconductor RAM device having flip-flop type memory cells, the size of each of the memory cells has become very small so that the memory capacity has become very large.

However, in a conventional static type RAM device in which each of the memory cells drives a sense amplifier directly through bit lines and data bus lines, one disadvantage is that the read-out speed of the RAM device is decreased and the reliability of read-out data is decreased. This is due to the increase of the integration degree of the semiconductor memory device, where the chip size of each of the memory cells is small and, especially in a case of a static type memory cell, the size of the driver transistors included in each of the memory cells is small and hence the drive capacity of each of the memory cells decreases. Moreover, the stray capacitance of the bit lines and the data bus lines, which are driven by the memory cells and which form load circuits of the memory cells, does not decrease in accordance with the increase of the integration density of the RAM device. Therefore, the amplitude of a read-out signal from each of the memory cells becomes small, and the reliability of the read-out data is decreased. Thus, the time necessary to change the potential on each of the bit lines and the data bus lines becomes large, because it takes a long time to charge or discharge the stray capacitance of these lines by a memory cell having a small drive capacity. Therefore, the read-out time of the RAM device increases according to the increase in the integration density of the RAM device.

SUMMARY OF THE INVENTION

It is the principal object of the present invention to increase the read-out speed of the static RAM device having a large memory capacity.

It is another object of the present invention to improve the reliability of the read-out data from a static RAM device having a large memory capacity.

According to the present invention, there is provided a static type semiconductor RAM device comprising a latch circuit at every column which detects, amplifies and temporarily holds a read-out signal from each of the memory cells in the corresponding column and which has a large drive capacity. In the static type RAM device according to the present invention, each of the memory cells is used as an element to only hold information. The data bus lines are driven by the latch circuits having a large drive capacity, so that the slow down of the read-out speed of the static type RAM device having a large memory capacity is prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block circuit diagram of a static type semiconductor RAM device according to the present invention;

FIG. 2 is a circuit diagram of a memory cell used in the RAM device of FIG. 1;

FIG. 3 is a block circuit diagram of a gate signal generator used in the RAM device of FIG. 1;

FIG. 4 is a timing diagram illustrating the signals appearing in the circuits of FIGS. 1 and 3;

FIG. 5 is a circuit diagram of a sense amplifier used in the RAM device of FIG. 1.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 illustrates a static type semiconductor RAM device in accordance with an embodiment of the present invention. In FIG. 1, memory cells MC₀₀ through MC_NN are disposed in a matrix of N rows by N columns and each of the memory cells comprises a flip-flop, which will be explained later in detail. Word lines W₀ through W_N are connected to X address (or row address) decoders XD₀ through XD_N respectively, and each of the word lines W₀ through W_N is selected by corresponding one of the output signals X₀ through X_N from the X address decoders XD₀ through XD_N. A plurality of bit line pairs B₀, B₀ through B_N, B_N are crossed with a plurality of the word lines W₀ through W_N to form the matrix. At each cross position of the matrix, each of the memory cells MC₀₀ through MC_NN is connected between a bit line pair and a word line. These bit line pairs B₀ , B₀ through B_N, B_N are connected to latch circuits or amplifier circuits RA₀ through RA_N respectively, according to the present invention. All the latch circuits RA₀ through RA_N have the same structure, and therefore only the latch circuit RA₀ will be explained hereinafter. The latch circuit RA₀ comprises load transistors Q₁ and Q₂, and driver transistors Q₃ and Q₄ which comprise a flip-flop. The latch circuit RA₀ further comprises gate transistors Q₅ and Q₆ connected between the bit line pair B₀, B₀ and the flip-flop, and a switching transistor Q₇. The switching transistor Q₇ and the load transistors Q₁ and Q₂ are turned on and off by a signal Y_0D which is a delayed signal of an output signal Y₀ from a Y address (or column address) decoder, not shown in the drawing. The gate transistors Q₅ and Q₆ are turned on and off by a delayed gate signal WDD produced in a gate signal generator, which will be explained later. Therefore, the latch circuits RA₀ through RA_N are selected by the delayed gate signal WDD and the delayed output signals Y_0D through Y_ND of the output signals Y₀ through Y_N from the Y address decoders, not shown in the drawing. The flip-flop of each of the above-mentioned latch circuits RA₀ through RA_N has the same structure as that of each of the memory cells MC₀₀ through MC_NN, which will be explained later. However, it should be noted that the drive capacity of the driver transistors Q₃ and Q₄ of each of the latch circuits is larger than that of the driver transistors of the flip-flop contained in each of the memory cells MC₀₀ through MC_NN. Therefore, for example, the size of the driver transistors Q₃ and Q₄ of each of the latch circuits is larger than that of the driver transistors of each of the memory cells MC₀₀ through MC_NN.

FIG. 2 illustrates, as an example, the memory cell MC₀₀, used in the circuit of FIG. 1. The memory cell MC₀₀ comprises load transistors Q₂₁, Q₂₂ and driver transistors Q₂₃, Q₂₄ which comprise a flip-flop, and gate transistors Q₂₅, Q₂₆ which are turned on and off by for example, the output signal from the X address decoder XD₀, i.e., decoded address signal X₀. When a read-out or a write-in of information is effected, the gate transistors Q₂₅ and Q₂₆ are turned on due to the supply of a decoded address signal X₀ of high potential level, and thus transfer of information between the bit lines B₀, B₀ and the flip-flop of the memory cell MC₀₀ is effected.

FIG. 3 illustrates a gate signal generator which produces a delayed gate signal WDD. This generator comprises a detector circuit DXD including trigger pulse generators TG₀₁, TG₀₂, . . . , TG_M1, TG_M2, OR gates OG₀, . . . , OG_M, OG₀₀ and an inverter INV, and, a delay circuit TD. Each of the trigger pulse generators TG₀₁ through TG_M2 detects potential changes, i.e. the leading edge or trailing edge, of the respective buffered address signals A₀, A₀, . . . , A_M, A_M and generates respective trigger pulses T₀, T₀ ', . . . , T_M, T_M ' when the potential change is detected. OR gates OG₀ through OG_M and an OR gate OG₀₀ effect the logical "or" operation of the trigger pulses T₀, T₀ ', . . . , T_M, T_M '. The inverter INV inverts an output signal from the OR gate OG₀₀ and produces a gate signal T. A delay circuit TD delays the gate signal T for a predetermined time period and produces the delayed gate signal WDD, which was mentioned before. The delay time of the delay circuit TD is approximately the time it takes the output signal X₀, . . . , X_N-1 or X_N respectively to propagate from the X address decoder XD₀, . . . , XD_N-1 or XD_N to the farthest end of the word line W₀, . . . , W_N-1 or W_N, i.e., a portion of the word line to which the memory cell MC_ON, . . . , MC_N-1 N or MC_NN is connected in the embodiment of FIG. 1. Therefore, the delay circuit TD can be constructed by using a dummy word line which has approximately the same length as that of each of the word lines W₀ through W_N and which is disposed parallel to the word lines W₀ through W_N. In the above-mentioned detector circuit, each of the trigger pulse generators TG₀₁ through TG_M2 can be constructed by using, for example, a differentiation circuit and a wave shaping circuit.

With reference to FIG. 4, the operation of the memory device according to the present invention will now be explained. When the read-out of information from a memory cell of the memory device is effected, input address signals A₀, A₁, . . . , A_M designating the memory cell are applied to address buffer circuits, which are not shown in the drawings. The address buffer circuits produce buffered address signal pairs A₀, A₀, . . . , A_M, A_M containing non-inverted signals and inverted signals of the input address signals. Some of the address signals A₀, A₀, . . . , A_M, A_M are applied to the X address decorders XD₀ through XD_N and some of the address signals are applied to Y address decoders, which are not shown in the drawings. When the memory cell, for example, MC₀₀ is selected, the output X₀ from the X address decorder XD₀ becomes high and the output Y₀ from the Y address decoder becomes high. Before the output X₀ and the output Y₀ become high, at least two of the address signal pairs A₀, A₀, . . . , A_M, A_M (i.e., at least a pair of the address signals including non-inverted and inverted address signals) change their potential level, as illustrated by A of FIG. 4. This change of the potential level may be a potential rise or a potential fall. In response to the change of the potential level of at least one address signal, the detector circuit DXD (FIG. 3) generates a gate signal T as illustrated in FIG. 4. The delay circuit TD (FIG. 3) delays the gate signal T and produces the delayed gate signal WDD, as illustrated in FIG. 4. The delayed gate signal WDD is applied to the gate electrodes of the transistors Q₅ and Q₆ of the latch circuits RA₀ through RA_N of FIG. 1. Before the delayed gate signal WDD is generated, the potential of all portions of the selected word line W₀ rises to a high level. Therefore, the information from the memory cell MC₀₀, which is disposed at the position nearest the X address decoder XD₀ of FIG. 1, has already been read out to the bit line pair B₀, B₀. That is, the potentials of the point A and the point B (FIG. 2) in the memory cell MC₀₀ are already transferred to the bit lines B₀ and B₀ respectively. In such a condition, the gate transistors Q₅ and Q₆ are turned on by the delayed gate signal WDD and the information of the memory cell MC₀₀, i.e. the potentials of the point A and the point B of the memory cell MC₀₀, is applied to the latch circuit RA₀ through the gate transistors Q₅ and Q₆. After the delayed gate signal WDD is applied to the gate transistors Q₅ and Q₆, the delayed Y decoder signal Y_0D is applied to the gate electrodes of the switching transistor Q₇ and of the load transistors Q₁ and Q₂ of the latch circuit R₀. Thus, the latch circuit RA₀ is activated due to the supply of an operating voltage. Therefore, the latch circuit RA₀ is set to a condition determined by the input potentials, i.e. the potentials of the bit lines B₀ and B₀, so that the transferring of information to the latch circuit RA₀ is effected. In this case, stray capacitance existing between the input circuit portion of the latch circuit RA₀ and the ground are charged by the potentials of the bit lines B₀ and B₀. Therefore, even if the delayed Y decoder signal Y_0D is applied to the latch circuit RA₀ a short time after the delayed gate signal WDD has changed from high potential to low potential, as illustrated in FIG. 4, it is possible to set the latch circuit RA₀ to a condition determined by the potentials of the bit lines B₀ and B₀. It should be noted that the delayed gate signal WDD and the delayed Y decoder signal Y_0D are needed in order to prevent the destruction of data in the memory cell MC₀₀. If the gate transistors Q₅ and Q₆ are always turned on, due to the supply of DC voltage of high potential instead of the delayed gate signal WDD, or if the latch circuit RA₀ is activated by the Y decoder signal Y₀, instead of the delayed Y decoder signal Y_0D, the memory cell MC₀₀ having a small drive capacity is written-in by the potentials of the bit lines B₀ and B₀ which are determined by a condition of the latch circuit RA₀ at the time the memory cell MC₀₀ is selected. Therefore, there is a possibility of the destruction of the data stored in the memory cell, for example, MC₀₀. In order to prevent the destruction of the data stored in each of the memory cells, it is necessary to use the delayed gate signal WDD and the delayed Y decoder signal Y_0D, as mentioned before, so that the potentials of the bit lines are determined by the selected memory cell and the latch circuit is set to the condition determined by the potentials of the bit lines due to the supplied potentials of the bit lines.

FIG. 5 illustrates an example of a sense amplifier SA which is used in the memory device of FIG. 1. The sense amplifier SA comprises a pair of transistors Q₅₀ and Q₅₁ forming a differential amplifier, a pair of load transistors Q₅₂ and Q₅₃, and a transistor Q₅₄ forming a constant current source. The gate electrodes of the transistors Q₅₀ and Q₅₁ are respectively connected to the output terminals of the latch circuits RA₀ through RA_N through data bus lines which are not shown in the drawings. Therefore, the output signals D and D of the latch circuit, for example, RA₀ are respectively applied to the gate electrodes of the transistors Q₅₀ and Q₅₁, and amplified by the sense amplifier SA. The sense amplifier SA provides output signals O and O as the read-out signals from the memory device.

According to the present invention, the bit lines, the data bus lines and the sense amplifier are driven by the latch circuits, whose driver transistors are big in size, so as to obtain a large drive capacity, to increase the read-out speed and to improve the reliability of the read-out data of the static type RAM device. Therefore, it is not necessary to use memory cells having big sizes. Also, a latch circuit is provided for every column so that the integration density of the RAM device is not greatly decreased.

Claims

I claim:

1. A semiconductor RAM device having a matrix of rows corresponding to word lines and columns corresponding to bit lines, and static type memory cells, respective of the static type memory cells operatively connected at corresponding of the cross points of said matrix,

a row decoder having outputs respectively, operatively connected to corresponding ones of said rows;

a column decoder having outputs respectively, operatively connected to corresponding ones of said columns;

each of said static type memory cells being selected by the respective output from the row decoder and the respective output from the column decoder and generating a data signal in response to being selected, said semiconductor RAM device comprising:

amplifier circuits, having activated and non-activated states, respective of said amplifier circuits operatively connected to corresponding of said bit lines, for amplifying the data signal from a selected one of said static type memory cells associated with said corresponding bit lines, and

gate circuits having activated and non-activated states, respective of said gate circuits operatively connected between said corresponding bit lines and said respective amplifier circuits, said gate circuits being activated for a first specified period after a respective memory cell is selected by said output from said row decoder and said output from said column decoder and passing the data signal from said respective memory cell to said corresponding amplifier circuit,

said amplifier circuit being selectively activated for a second specified period after said first specified period.

2. A semiconductor RAM device as set forth in claim 1, wherein said semiconductor RAM device further comprises:

a detector circuit, operatively connected to corresponding of said gate circuits, for receiving input address signals and for detecting a potential change of at least one of the input address signals, and for providing a gate signal in response to said detecting; and

a delay circuit, operatively connected between said detector circuit and said corresponding of said gate circuits, for delaying said gate signal from said detector circuit, for providing an output signal and for activating said gate circuits.

3. A semiconductor RAM device as set forth in claim 2, wherein said delay circuit delays said gate signal for a time approximately equal to the time for said output signal from said row decoder to propagate from said row decoder to the memory cell connected at the end of a word line farthest from said row decoder.

4. A semiconductor RAM device as set forth in claim 3, wherein said amplifier circuits are activated in response to said output signal from said column decoder.

5. A semiconductor RAM device as set forth in claim 2, wherein said amplifier circuits are activated in response to said output signal from said column decoder.

6. A semiconductor RAM device as set forth in claims 1, 2, 3, 5 or 4, wherein said amplifier circuits comprise latch circuits, each latch circuit including a pair of driver transistors.

7. A semiconductor RAM device as set forth in claim 6, wherein each memory cell includes a driver transistor having a drive capacity, and wherein each of said driver transistors of said latch circuits has a larger drive capacity than the drive capacity of said driver transistors of the memory cells.

8. A semiconductor RAM device as set forth in claim 7, wherein each memory cell driver transistor has a predetermined size, and each of said driver transistors of said latch circuits has a bigger size than said predetermined size of said driver transistors of the memory cells.

9. A semiconductor RAM device as set forth in claim 7, wherein said drive capacity of said memory cell driver transistors is selected to drive only said respective column and said respective gate circuit.