US3733222A - Method of removing inversion layers from semiconductor bodies of p-type conductivity - Google Patents

Method of removing inversion layers from semiconductor bodies of p-type conductivity Download PDF

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Publication number
US3733222A
US3733222A US00074261A US3733222DA US3733222A US 3733222 A US3733222 A US 3733222A US 00074261 A US00074261 A US 00074261A US 3733222D A US3733222D A US 3733222DA US 3733222 A US3733222 A US 3733222A
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US
United States
Prior art keywords
inversion layers
type conductivity
semiconductor bodies
semiconductor
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00074261A
Inventor
H Schiller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
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Publication date
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Application granted granted Critical
Publication of US3733222A publication Critical patent/US3733222A/en
Assigned to TELEFUNKEN ELECTRONIC GMBH reassignment TELEFUNKEN ELECTRONIC GMBH ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: LICENTIA PATENT-VERWALTUNGS-GMBH, A GERMAN LIMITED LIABILITY COMPANY
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A METHOD OF REMOVING INVERSION LAYERS FROM THE SURFACE OF HIGH RESISTANCE SEMICONDUCTOR REGIONS OF PTYPE CONDUCTIVITY WHICH BORDER, IN A SEMICONDUCTOR BODY, ON A SEMICONDUCTOR REGION OF N-TYPE CONDUCTIVIGY AND ARE COVERED WITH AN OXIDE MASKING LAYER. THE METHOD ESSENTIALLY COMPRISES IRRADIATING THE SEMICONDUCTOR BODY WITH NEUTRONS.

Description

US00074261A 1969-09-27 1970-09-22 Method of removing inversion layers from semiconductor bodies of p-type conductivity Expired - Lifetime US3733222A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948884 DE1948884B2 (en) 1969-09-27 1969-09-27 PROCEDURE FOR REMOVING INVERSION LAYERS

Publications (1)

Publication Number Publication Date
US3733222A true US3733222A (en) 1973-05-15

Family

ID=5746675

Family Applications (1)

Application Number Title Priority Date Filing Date
US00074261A Expired - Lifetime US3733222A (en) 1969-09-27 1970-09-22 Method of removing inversion layers from semiconductor bodies of p-type conductivity

Country Status (4)

Country Link
US (1) US3733222A (en)
DE (1) DE1948884B2 (en)
FR (1) FR2063040B3 (en)
GB (1) GB1318603A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2517939A1 (en) * 1974-08-06 1976-02-26 Telecommunications Sa PROCESS FOR PRODUCING A PHOTODIOD SENSITIVE TO INFRARED RADIATION AND PHOTODIOD PRODUCED BY THIS PROCESS
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
US4469527A (en) * 1981-06-19 1984-09-04 Tokyo University Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2753488C2 (en) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of n-doped silicon by means of neutron irradiation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
DE2517939A1 (en) * 1974-08-06 1976-02-26 Telecommunications Sa PROCESS FOR PRODUCING A PHOTODIOD SENSITIVE TO INFRARED RADIATION AND PHOTODIOD PRODUCED BY THIS PROCESS
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
US4469527A (en) * 1981-06-19 1984-09-04 Tokyo University Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Also Published As

Publication number Publication date
DE1948884A1 (en) 1971-04-08
FR2063040B3 (en) 1973-06-29
GB1318603A (en) 1973-05-31
FR2063040A7 (en) 1971-07-02
DE1948884B2 (en) 1971-09-30

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AS Assignment

Owner name: TELEFUNKEN ELECTRONIC GMBH, THERESIENSTRASSE 2, D-

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:LICENTIA PATENT-VERWALTUNGS-GMBH, A GERMAN LIMITED LIABILITY COMPANY;REEL/FRAME:004215/0210

Effective date: 19831214