US2677793A - Crystal amplifier - Google Patents

Crystal amplifier Download PDF

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Publication number
US2677793A
US2677793A US39665A US3966548A US2677793A US 2677793 A US2677793 A US 2677793A US 39665 A US39665 A US 39665A US 3966548 A US3966548 A US 3966548A US 2677793 A US2677793 A US 2677793A
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contact
crystal
wire
conductor
layer
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US39665A
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Koury Frederic
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GTE Sylvania Inc
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Sylvania Electric Products Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates

Definitions

  • This invention relates to semi-conductors, and particularly to semi-conducting crystals such as germanium, useful for electrical purposes such as rectification, amplifiers and the like.
  • a point contact to such a crystal gives a rectifying action, and the addition of one or more additional contacts close to the first will allow the device to be used as an amplifier.
  • the setting of two contacts very close to, but spaced from, each other introduce considerable difficulty.
  • My invention facilitates the stable in adjustment.
  • a feature of the invention is the use of one or more concentric contacts bearing on the crystal.
  • a further feature is a wire contact surrounded by an insulating layer which is in turn metallic layer. Several spursulation and metal may be used to produce a number of contacts.
  • FIG. 1 shows in section a cryst cording to the invention
  • Figure 2 shows a cross-section through the contact Wire and its surrounding layers
  • Figure 3 is a cross-section of a modification of the device in Figures 1 and 2.
  • the crystal which may be for example, of germanium with a suitable activating impurity such as tin, has a flat surface 2, on which the contacts 3, l rest.
  • the catwhisker or contact wire 5 may be of tungsten or other suitable metal having an insulating coating 5 of a suitable material such as cellulose ester lacquer, synthetic resin or the like, in a thin film from 0.00001" to 0.01" thick although for best results the coating should not ordinarily be much more than 0.001 thick.
  • the metal coating l is applied over the insulating coating.
  • the insulating coating (1 be soaked in a solution or" stannous chloride and hydrochloric acid for about 12 minutes. After thorough rinsing in water it is then immersed in an ammonical solution of silver metals, about 8 cc. of 37% formaldehyde solution being added to each 100 cc. of silver nitrate solution. The coating 8 is then rinsed again in water, and a layer of silver plated thereon in a standard cyanide silver plating bath in the manner well known in the art. The thickness may be, for example, from 0.000001" to 0.1" as desired. A flash plate of nickel is added over the silver to facilitate soldering later to the lead-in wires 8, if desired.
  • the outer plated coating 1 may be spot-welded to a lead-in or contact wire 8, the central wire 5 being soldered to another lead-in wire 9.
  • wire 5, 6, I may then be bent into an S-shape, preferably with the loops [9 and H opposite in direction, equal and having its longitudinal axis in a single plane.
  • the straight end portions are preferably in line with each other.
  • the end It of the wire 5, 6, l is immersed in an acetone solution to a depth of 0.005 inch to remove the plastic layer 6 away from the ends of the wire 5.
  • Other solvents may be used if necessary or desirable for any reason.
  • the ends 4 of wire 5 and layer I may be pointed electrolytically by immersing the wire in a solution of sodium nitrite and sodium hydroxide, connecting the wire to the positive terminal of a direct current supply, of six volts, for example,
  • the composite and connecting the negative terminal to a nickel cathode in the solution between about 20 and 50 amperes per square foot may be passed between the electrodes for a few seconds to form a point on the wire end 3 and a sharp edge 4 or series of circumferential points around layer 1.
  • the composite wire 5, 6, i may be cemented or otherwise passed through and ailixed to an insulating piece I? and a germanium crystal brought up against the points or edges 3, t until the proper pressure is achieved for the resistance desired.
  • the back contact M which is shown to be a contact of comparatively large area, may be attached to the germanium or other crystal by soldering or the like, and the metal or other support I 5 used to hold the crystal in position in the cylinder 15, which may be of metal.
  • the resultant multi-electrode crystal may be used for many purposes.
  • the catwhisker 5 may be connected to a negative voltage, and the layer 1 to a positive voltage with respect to back contact M, the signal being impressed between layer 1 and contact I5, for example in series with the positive voltage.
  • the output current will then flow in the circuit of catwhisker 5, but if desired, with the proper biasing voltage, the catwhisker 5 may be used as the signal electrode and the layer 7 as the output electrode.
  • this invention is a particular form of device more broadly claimed in co-pending application, Serial No. 39,367, filed July 17, 1948, by Orrick H. Big-gs and assigned to the assignee hereof and which is now abandoned.
  • B and metal I, 1 may be used to produce a number of contacts concentrically about a wire 5, and these may be energized and connected to the appropriate signal and output circuits, in dependence upon the circuit application.
  • a semi-conductor unit comprising a semi- A current density of conductive crystal, a conductor in substantially point-contact with said crystal, a contact of com-- paratively large area in engagement with said crystal, a coating of insulation extending along the longitudinal surface of said conductor, and a metallic layer over said insulating coating and encircling said coating, the end of said layer being of progressively reduced thickness to provide a circumferential edge encircling said conductor, said edge being in contact with said crystal.
  • a semi-conductor unit comprising a semiconductive crystal, a conductor in substantially point-contact with said crystal, a contact of cornparatively large area in engagement with said crystal, a coating of insulation extending about said conductor along its length, and a metallic layer over said insulating coating and having a sharpened end portion in contact with said crystal, the composite structure including said conductor, said coating, and said metallic layer being contoured so as to have a portion extending perpendicularly from the surface of said crystal, and having a laterally extending curved portion to afford a resilient engagement of the conductor and the metallic layer against the crystal.
  • An electrical device comprising a body of semi-conductive material, a conductor in substantially point-contact with said body, a contact of comparatively large area in engagement with said body, a film of insulation about the lateral surface of said conductor, and a metallic sheath on said insulating layer and in endwise engagement with said semi-conductive body circuinferentially about the contact of said conductor with said body, the separation of the conductor and the metallic sheath at the semi-conductive body being of the order of .001 inch.
  • An electrical device including a semi-conductive body, a contact of comparatively large area in engagement therewith, and multiple concentric conductors in endwise engagement with said body, said conductors being mutually separated by insulating coating the thickness of which is of the order of .001 inch.
  • An electrical device including a semi-conductive body, a contact of comparatively large area in engagement therewith, and multiple concentrically arranged conductors in endwise engagement with said body, said conductors being separated by insulation, the composite concentric conductor and insulation structure being contoured to provide an arcuate resilient portion, and an additional portion extending perpendicularly from the semi-conductive body.
  • lfhe method of making a composite contact for a semi-conductor unit including the steps of depositing a layer of metal on the exterior of a length of wire having a lateral coating of insulation, dissolving the insulation from a limited space at the end of the wire between the wire and the film, and electrochemically sharpening the metal film at its contact end.
  • the method of making a composite contact for a semi-conductor unit including the steps of depositing a layer of metal on the exterior of a length of wire having a lateral coating of insulation and dissolving the insulation from a limited space at the-end of the wire between the wire and the film.
  • a transistor including a body of semiconductive material, a contact of comparatively large area on said body, and several sequentially concentric conductors in sharp contact with said semiconductive body and separated from each other by thin layers of insulation.
  • a transistor including a body of semiconductive material, a first conductor in substantially point-contact with said body, a contact of comparatively large area in engagement with said body, a thin layer of insulation about the lateral surface of said conductor, a second conductor engaging said body and surrounding said insulation and minutely spaced from said first conductor by said insulation, a further layer of insulation on said second conductor, and a further cylindrical contact, in sequence, surrounding said further layer of insulation.
  • a transistor including a semiconductive crystal, a base contact on said crystal, an insulated metal wire having one end in substantially point-contact with said crystal, a first cylindrical contact concentric with and encasing said wire but minutely insulated therefrom, and a second contact concentrically about said first cylindrical contacts but minutely insulated therefrom, said cylindrical contacts being in circumferential contact with said crystal about said wire contact point and permanently positioned in close proximity with one another.
  • a multi-element concentric co axlal translating device comprising a semiconductive crystal, at base contact on said crystal, an insulated metal wire one end of which in point contact with said crystal, a plurality of concentric cylindrical metal contacts completely surrounding said wire each being separated and insulated from the next larger by a thin layer of insulation on the outer surface of the next smaller in diameter, and each of said contacts in concentric circumferential contact with said crystal about said contact point and permanently in close proximity with adjacent circumferential contacts.
  • a semi-conductor unit comprising a semiconductive crystal, a conductor in su-*stantially point-contact with said crystal, a contact of comparatively large area in engagement with said crystal, a coating of insulation extending along the longitudinal surface of said conductor, and a metallic layer over said insulating coating and encircling said coating, the end of said layer being of progressively reduced thickness to provide a circumferential edge encircling said conductor, said edge being in contact with said crystal, said insulating coating extending close to but spaced from the engagement of said point-contact conductor with said crystal.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

May 4, 1954 F. KOURY CRYSTAL AMPLIFIER Filed July 20, 1948 m E Wm M w A K \\\\\\X\\\\ 6 N 2 46 Hm Q n ATTORNEY Patented May 4, 1954 2,677,793 CRYSTAL AMPLIFIER Frederic Koury, Somer Sylvania Electric Pro a corporation of Mass 13 Claims.
This invention relates to semi-conductors, and particularly to semi-conducting crystals such as germanium, useful for electrical purposes such as rectification, amplifiers and the like.
A point contact to such a crystal gives a rectifying action, and the addition of one or more additional contacts close to the first will allow the device to be used as an amplifier. The setting of two contacts very close to, but spaced from, each other introduce considerable difficulty.
My invention facilitates the stable in adjustment.
A feature of the invention is the use of one or more concentric contacts bearing on the crystal. A further feature is a wire contact surrounded by an insulating layer which is in turn metallic layer. Several seinsulation and metal may be used to produce a number of contacts.
Other objects, features and advantages of the invention will be apparent from the following specification taken with the accompanying drawing in which:
Figure 1 shows in section a cryst cording to the invention;
Figure 2 shows a cross-section through the contact Wire and its surrounding layers; and
Figure 3 is a cross-section of a modification of the device in Figures 1 and 2.
In Figure 1, the crystal which may be for example, of germanium with a suitable activating impurity such as tin, has a flat surface 2, on which the contacts 3, l rest.
The catwhisker or contact wire 5 may be of tungsten or other suitable metal having an insulating coating 5 of a suitable material such as cellulose ester lacquer, synthetic resin or the like, in a thin film from 0.00001" to 0.01" thick although for best results the coating should not ordinarily be much more than 0.001 thick. The metal coating l is applied over the insulating coating.
The insulating coating (1 be soaked in a solution or" stannous chloride and hydrochloric acid for about 12 minutes. After thorough rinsing in water it is then immersed in an ammonical solution of silver metals, about 8 cc. of 37% formaldehyde solution being added to each 100 cc. of silver nitrate solution. The coating 8 is then rinsed again in water, and a layer of silver plated thereon in a standard cyanide silver plating bath in the manner well known in the art. The thickness may be, for example, from 0.000001" to 0.1" as desired. A flash plate of nickel is added over the silver to facilitate soldering later to the lead-in wires 8, if desired.
The outer plated coating 1 may be spot-welded to a lead-in or contact wire 8, the central wire 5 being soldered to another lead-in wire 9.
a1 assembly acville, Mass, assignor to ducts Inc., Salem, Mass.
achusetts Application July 20, 1948, Serial No. 39,665
wire 5, 6, I may then be bent into an S-shape, preferably with the loops [9 and H opposite in direction, equal and having its longitudinal axis in a single plane. The straight end portions are preferably in line with each other.
The end It of the wire 5, 6, l is immersed in an acetone solution to a depth of 0.005 inch to remove the plastic layer 6 away from the ends of the wire 5. Other solvents may be used if necessary or desirable for any reason.
The ends 4 of wire 5 and layer I may be pointed electrolytically by immersing the wire in a solution of sodium nitrite and sodium hydroxide, connecting the wire to the positive terminal of a direct current supply, of six volts, for example,
The composite and connecting the negative terminal to a nickel cathode in the solution. between about 20 and 50 amperes per square foot may be passed between the electrodes for a few seconds to form a point on the wire end 3 and a sharp edge 4 or series of circumferential points around layer 1.
The composite wire 5, 6, i may be cemented or otherwise passed through and ailixed to an insulating piece I? and a germanium crystal brought up against the points or edges 3, t until the proper pressure is achieved for the resistance desired. The back contact M, which is shown to be a contact of comparatively large area, may be attached to the germanium or other crystal by soldering or the like, and the metal or other support I 5 used to hold the crystal in position in the cylinder 15, which may be of metal.
The resultant multi-electrode crystal may be used for many purposes. For example, the catwhisker 5 may be connected to a negative voltage, and the layer 1 to a positive voltage with respect to back contact M, the signal being impressed between layer 1 and contact I5, for example in series with the positive voltage. The output current will then flow in the circuit of catwhisker 5, but if desired, with the proper biasing voltage, the catwhisker 5 may be used as the signal electrode and the layer 7 as the output electrode. In one aspect this invention is a particular form of device more broadly claimed in co-pending application, Serial No. 39,367, filed July 17, 1948, by Orrick H. Big-gs and assigned to the assignee hereof and which is now abandoned.
As illustrated in Figure 3 and as mentioned above several sequential layers of insulation 6, B and metal I, 1 may be used to produce a number of contacts concentrically about a wire 5, and these may be energized and connected to the appropriate signal and output circuits, in dependence upon the circuit application.
What I claim is:
1. A semi-conductor unit comprising a semi- A current density of conductive crystal, a conductor in substantially point-contact with said crystal, a contact of com-- paratively large area in engagement with said crystal, a coating of insulation extending along the longitudinal surface of said conductor, and a metallic layer over said insulating coating and encircling said coating, the end of said layer being of progressively reduced thickness to provide a circumferential edge encircling said conductor, said edge being in contact with said crystal.
2. A semi-conductor unit comprising a semiconductive crystal, a conductor in substantially point-contact with said crystal, a contact of cornparatively large area in engagement with said crystal, a coating of insulation extending about said conductor along its length, and a metallic layer over said insulating coating and having a sharpened end portion in contact with said crystal, the composite structure including said conductor, said coating, and said metallic layer being contoured so as to have a portion extending perpendicularly from the surface of said crystal, and having a laterally extending curved portion to afford a resilient engagement of the conductor and the metallic layer against the crystal.
3. An electrical device comprising a body of semi-conductive material, a conductor in substantially point-contact with said body, a contact of comparatively large area in engagement with said body, a film of insulation about the lateral surface of said conductor, and a metallic sheath on said insulating layer and in endwise engagement with said semi-conductive body circuinferentially about the contact of said conductor with said body, the separation of the conductor and the metallic sheath at the semi-conductive body being of the order of .001 inch.
4. An electrical device including a semi-conductive body, a contact of comparatively large area in engagement therewith, and multiple concentric conductors in endwise engagement with said body, said conductors being mutually separated by insulating coating the thickness of which is of the order of .001 inch.
5. An electrical device including a semi-conductive body, a contact of comparatively large area in engagement therewith, and multiple concentrically arranged conductors in endwise engagement with said body, said conductors being separated by insulation, the composite concentric conductor and insulation structure being contoured to provide an arcuate resilient portion, and an additional portion extending perpendicularly from the semi-conductive body.
6. lhe method of making a composite contact for a semi-conductor unit, including the steps of depositing a layer of metal on the exterior of a length of wire having a lateral coating of insulation, and electrochemically sharpening the metal layer at its contact end.
7. lfhe method of making a composite contact for a semi-conductor unit, including the steps of depositing a layer of metal on the exterior of a length of wire having a lateral coating of insulation, dissolving the insulation from a limited space at the end of the wire between the wire and the film, and electrochemically sharpening the metal film at its contact end.
8. The method of making a composite contact for a semi-conductor unit including the steps of depositing a layer of metal on the exterior of a length of wire having a lateral coating of insulation and dissolving the insulation from a limited space at the-end of the wire between the wire and the film.
9. A transistor, including a body of semiconductive material, a contact of comparatively large area on said body, and several sequentially concentric conductors in sharp contact with said semiconductive body and separated from each other by thin layers of insulation.
10. A transistor, including a body of semiconductive material, a first conductor in substantially point-contact with said body, a contact of comparatively large area in engagement with said body, a thin layer of insulation about the lateral surface of said conductor, a second conductor engaging said body and surrounding said insulation and minutely spaced from said first conductor by said insulation, a further layer of insulation on said second conductor, and a further cylindrical contact, in sequence, surrounding said further layer of insulation.
11. A transistor, including a semiconductive crystal, a base contact on said crystal, an insulated metal wire having one end in substantially point-contact with said crystal, a first cylindrical contact concentric with and encasing said wire but minutely insulated therefrom, and a second contact concentrically about said first cylindrical contacts but minutely insulated therefrom, said cylindrical contacts being in circumferential contact with said crystal about said wire contact point and permanently positioned in close proximity with one another.
12. In a multi-element concentric co axlal translating device, the elements comprising a semiconductive crystal, at base contact on said crystal, an insulated metal wire one end of which in point contact with said crystal, a plurality of concentric cylindrical metal contacts completely surrounding said wire each being separated and insulated from the next larger by a thin layer of insulation on the outer surface of the next smaller in diameter, and each of said contacts in concentric circumferential contact with said crystal about said contact point and permanently in close proximity with adjacent circumferential contacts.
13. A semi-conductor unit comprising a semiconductive crystal, a conductor in su-*stantially point-contact with said crystal, a contact of comparatively large area in engagement with said crystal, a coating of insulation extending along the longitudinal surface of said conductor, and a metallic layer over said insulating coating and encircling said coating, the end of said layer being of progressively reduced thickness to provide a circumferential edge encircling said conductor, said edge being in contact with said crystal, said insulating coating extending close to but spaced from the engagement of said point-contact conductor with said crystal.
References Cited in the file of this patent UNITED STATES PATENTS
US39665A 1948-07-20 1948-07-20 Crystal amplifier Expired - Lifetime US2677793A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
US2859393A (en) * 1954-12-20 1958-11-04 Siemens Edison Swan Ltd Electric semi-conductor devices
DE1092130B (en) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flat transistor with a plaque-shaped semiconductor body
DE1117219B (en) * 1955-07-28 1961-11-16 Gen Motors Corp Transistor with a flat semiconductor plate
DE1130525B (en) * 1959-02-26 1962-05-30 Westinghouse Electric Corp Flat transistor with a disk-shaped semiconductor body of a certain conductivity type
DE1167986B (en) * 1955-10-29 1964-04-16 Siemens Ag Flat transistor with a disk-shaped semiconductor body and with strip-shaped base and emitter electrodes
DE1186553B (en) * 1960-09-20 1965-02-04 Bbc Brown Boveri & Cie Controlled semiconductor rectifier
US3217213A (en) * 1961-06-02 1965-11-09 Slater Electric Inc Semiconductor diode construction with heat dissipating housing
US3448352A (en) * 1966-07-26 1969-06-03 Westinghouse Electric Corp Multiple electrical contact assembly for compression bonded electrical devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US962262A (en) * 1906-04-14 1910-06-21 Drahtlose Telegraphie Gmbh Wave-detector for wireless telegraphy.
US2197115A (en) * 1937-01-27 1940-04-16 Gen Motors Corp Electric thermogauge engine unit
US2261618A (en) * 1939-01-23 1941-11-04 Rca Corp Blocking-layer electrode system
US2476323A (en) * 1948-05-19 1949-07-19 Bell Telephone Labor Inc Multielectrode modulator
US2486776A (en) * 1948-04-21 1949-11-01 Bell Telephone Labor Inc Self-biased electric translating device
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US962262A (en) * 1906-04-14 1910-06-21 Drahtlose Telegraphie Gmbh Wave-detector for wireless telegraphy.
US2197115A (en) * 1937-01-27 1940-04-16 Gen Motors Corp Electric thermogauge engine unit
US2261618A (en) * 1939-01-23 1941-11-04 Rca Corp Blocking-layer electrode system
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2486776A (en) * 1948-04-21 1949-11-01 Bell Telephone Labor Inc Self-biased electric translating device
US2476323A (en) * 1948-05-19 1949-07-19 Bell Telephone Labor Inc Multielectrode modulator

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
US2859393A (en) * 1954-12-20 1958-11-04 Siemens Edison Swan Ltd Electric semi-conductor devices
DE1117219B (en) * 1955-07-28 1961-11-16 Gen Motors Corp Transistor with a flat semiconductor plate
DE1167986B (en) * 1955-10-29 1964-04-16 Siemens Ag Flat transistor with a disk-shaped semiconductor body and with strip-shaped base and emitter electrodes
DE1092130B (en) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flat transistor with a plaque-shaped semiconductor body
DE1130525B (en) * 1959-02-26 1962-05-30 Westinghouse Electric Corp Flat transistor with a disk-shaped semiconductor body of a certain conductivity type
DE1186553B (en) * 1960-09-20 1965-02-04 Bbc Brown Boveri & Cie Controlled semiconductor rectifier
US3217213A (en) * 1961-06-02 1965-11-09 Slater Electric Inc Semiconductor diode construction with heat dissipating housing
US3448352A (en) * 1966-07-26 1969-06-03 Westinghouse Electric Corp Multiple electrical contact assembly for compression bonded electrical devices

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