US2660697A - Selenium rectifier with varnish intermediate layers - Google Patents
Selenium rectifier with varnish intermediate layers Download PDFInfo
- Publication number
- US2660697A US2660697A US247161A US24716151A US2660697A US 2660697 A US2660697 A US 2660697A US 247161 A US247161 A US 247161A US 24716151 A US24716151 A US 24716151A US 2660697 A US2660697 A US 2660697A
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- US
- United States
- Prior art keywords
- varnish
- layer
- selenium
- intermediate layers
- rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052711 selenium Inorganic materials 0.000 title claims description 11
- 239000011669 selenium Substances 0.000 title claims description 11
- 239000002966 varnish Substances 0.000 title description 12
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Definitions
- the resistance of the rectifier in the forward direction is reduced by the arrangement of the present invention without impairing the blocking voltage.
- the arrangement may concern an approximation to the conditions of the point detector and that different current lines may be more decisive for the blocking phase of the rectifier than for the passing phase.
- Fig. 1 shows a scheme of the current distribution in a system in which a homogeneous body is contacted by another body of a sharp iorm along a small area (point contact).
- Fig. 2 the homogeneous body is subdivided into two regions of diierent resistivity.
- Fig. 1 is a sectional view ci a complete cell including base element, semi-conductor, insulating screen layer, and counterelectrode.
- the scheme of Fig. 1 corresponds to point contact rectiiiers in which the current is flowing in the open or forward direction
- the scheme of Fig. 2 is an image of the current ow in the inverse direction, where a blocking layer 3 has to be provided.
- the lines may be supposed to run almost parallelly and to swell out when entering the material of better conductivity.
- the resistance in the blocked direction will increase to a higher percentage than in the opposite direction when decreasing the contact area.
- the advantage of the invention may be seen in the process to replace a contact area, given by occasional perforations in a normal blocking layer (artificial or not), by a greater number oi smaller contact areas of an arbitrary defined shape. It should be understood that this; explanation of the advantageous effect of the invention should not exclude another theory o' the function of the device according to the invention.
- FIG. 5 Another embodiment oi the invention is represented in Fig. 5, where iine points 'l in regular distribution may be produced by a printing process. All gures have not been drawn in true scale. In at least one directionlines in the Width, points in the diameter-thesize of the intermediate lacquer coating should be Aof the order of thickness of the semi--con'du'ctig layer and less.
- FIG. 1 A complete cell is shown in Fig. 1 having a base element 8, a semi-conductor 9, insulating screen layer I and counter-electrode Il.
- the insulat-v ing screen layer i0 shown in Fig. 6 is of the form shown in Fig. 3.
- the thickness of semi-conducting layers 'usdally lies between 0.03 and 0.10 nim.
- the width of the lacquer stripes in Figure 3 or the diameter of the lacquer dots ih Figure 5 should approximately have these values.
- the area covered with lacquer shall a'r'niiht to ⁇ Z0-70%, preferably 40-60% of the total area.
- the higher percentages are to be applied in case of ne rasters only, i. e. for instance in oase of narrow lacquer/stripes.
- Width alternating with uncovered stripes of 0.15 mm.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Description
Nov. 24, 1953 H. E. LAUCKNER 2,660,697
SELENIUM RECTIFIER WITH VARNISH INTERMEDIATE LAYERS Filed Sept. 18, 1951 FIG. 3.
FIG. 4.
A ORNEY Patented Nov. 24, 1953 SELENIUM RECTIFIER WITH VARNISH INTERMEDIATE LAYERS Hans Eugen Lauckner, Weissenburg, Bayern, Germany, assignor to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware Application September 18, 1951, Serial No. 247,161
'Claims priority, application Germany September 21, 1950 6 Claims.
It is known practice to increase the blocking voltage of selenium dry plate rectifiers by applying a thin intermediate layer of insulating inaterial such as varnish to the semi-conducting layer. It is relatively diiiicult, of course, to prcduce this intermediary layer in equal quality. Accordingly, the electric values of such rectiflers varies. ln particular there are differences in the forming qualities which take effect in the rin ished rectifier discs since in the case of a great number of discs it is not possible to form each disc by itself.
It has been proved that according to the invention rectiers with extremely uniform qualities are obtained, especially rectiliers with a reproduceable blocking characteristic, if the Varnish is applied as a screen or raster instead or an evenly distributed varnish intermediate layer. After application of the varnish the back electrode is then applied. It will be of advantage to apply a screen composed of lines or dots to the selenium surface by a printing process.
Tests showed that the cover should not exceed a certain part of the selenium layer. E. g. a too great cover is applied in case of a line shaped screen wherein stripes of the free selenium sur:- iace of 0.15 mm. width alternate with varnish stripes of 0.25 mm. width; in this case the effect of an evenly distributed varnish layer results again. The covering of the selenium surface, i
therefore, must not reach these proportions. lt has to be noted, however, that the proportions are dependent on the geometric structure of the layer system, and also on the fmeness of the varnish screen.
The resistance of the rectifier in the forward direction is reduced by the arrangement of the present invention without impairing the blocking voltage. To explain such behavior it can presumably be pointed out that the arrangement may concern an approximation to the conditions of the point detector and that different current lines may be more decisive for the blocking phase of the rectifier than for the passing phase.
The behaviour of the system may be understood from the conditions of point-shaped contacts (see Electric Contacts, a book by Ragnar Holm) and shall be explained with respect to the accompanying drawings in which Fig. 1 shows a scheme of the current distribution in a system in which a homogeneous body is contacted by another body of a sharp iorm along a small area (point contact). In Fig. 2 the homogeneous body is subdivided into two regions of diierent resistivity. rIhe schemes corresponding to Figs.
3-5 shot.7 interrupted coats of lacquer, varnish, or 'the like, applied to the semiconducting layer before depositing the counterelectrode. Fig. 1 is a sectional view ci a complete cell including base element, semi-conductor, insulating screen layer, and counterelectrode.
Sup-posing in Fig. l a circular contact area of point i, which is small in comparison with the thickness of the homogeneous body 2, the current distribution indicated by the lines 4. It is cbvious that the swelling out of the lines will be decreased when substituting a given body of a certain resistivity by another one of the same shape or size but having a comparatively higher resistivity. This case has been realised in Fig. 2 in such a manner that a point-shaped contact touches a layer of a high resistivity contacting a body or low resistivity in the entire extension of the touching surface of these two bodies. In this case the current distribution is indicated by lines d'.
Whilst the scheme of Fig. 1 corresponds to point contact rectiiiers in which the current is flowing in the open or forward direction, the scheme of Fig. 2 is an image of the current ow in the inverse direction, where a blocking layer 3 has to be provided. Within the range of high resistivity the lines may be supposed to run almost parallelly and to swell out when entering the material of better conductivity.
When regarding the relation between the direct resistance and the blocking resistance as a function oi" the diameter or the shape of the contact area, the resistance in the blocked direction will increase to a higher percentage than in the opposite direction when decreasing the contact area. Thus the advantage of the invention may be seen in the process to replace a contact area, given by occasional perforations in a normal blocking layer (artificial or not), by a greater number oi smaller contact areas of an arbitrary defined shape. It should be understood that this; explanation of the advantageous effect of the invention should not exclude another theory o' the function of the device according to the invention.
Examples oi the distribution of the insulating material have been drawn in the further iigures. Corresponding to Fig. 3 tine parallel lines 5 of insulating material have been provided. In Fig. 4 two systems of rectangular crossed lines 5 and 6 have been shown.
Another embodiment oi the invention is represented in Fig. 5, where iine points 'l in regular distribution may be produced by a printing process. All gures have not been drawn in true scale. In at least one directionlines in the Width, points in the diameter-thesize of the intermediate lacquer coating should be Aof the order of thickness of the semi--con'du'ctig layer and less.
A complete cell is shown in Fig. 1 having a base element 8, a semi-conductor 9, insulating screen layer I and counter-electrode Il. The insulat-v ing screen layer i0 shown in Fig. 6 is of the form shown in Fig. 3.
The thickness of semi-conducting layers 'usdally lies between 0.03 and 0.10 nim. Thus the width of the lacquer stripes in Figure 3 or the diameter of the lacquer dots ih Figure 5 should approximately have these values. On the other hand, the area covered with lacquer shall a'r'niiht to {Z0-70%, preferably 40-60% of the total area. Hereby the higher percentages are to be applied in case of ne rasters only, i. e. for instance in oase of narrow lacquer/stripes. In the above example of a raster with lacquer stripes of 0.25 nim. Width alternating with uncovered stripes of 0.15 mm. width, 'howeverAi the lacquer stripes are covering only 62.5% of the total area, butldu'eA to their great Width they are taking equal effect as an uninterrupted lacquer layer and therefore are not suitable for the reduction to practice of thev invention. n l
While I have described above the principles of my invention in connection with speciiic methods, it is to be clearlyA understood that this description is made only by Wav of example and not as a limitation to the scope of my invention.A
What is claimed is:
1. Selenium rectier, in which an intermediate layer of insulating material is placed between the semi-conducting" layer and thbck electrode for an improvement in ure tracking voltage, characterized in that this intermediate layer takes the form of a screen (raster). 2.*S'e1enium rectifier as claimed in claim 1, and in which the insulating screen is made from some varnish.
3; )Seleiun reti'er as claimed in claim 1, and in t'vhic the scr'fi is composed of lines.
Slgiiuiir'etifier as claimed in claim 3 in ivhih the Width the lines going in one directin are f the order of the thickness of the semiconducting layer or less.
`5. AS'elriii ctier as claimed in claim 1 in which the screen is composed of dots.
6. Selenium rectifier as claimed in claim 5 in which the dots have a diameter of the same order as the thickness of the semi-conducting layer or less;
HANS EUGEN LAUCKNER.
References itd in the file of this patent UNITED STATES PATENTS
Claims (1)
1. SELENIUM RECTIFIER, IN WHICH AN INTERMEDIATE LAYER OF INSULATING MATERIAL IS PLACED BETWEEN THE SEMI-CONDUCTING LAYER AND THE BLACK ELECTRODE FOR
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2660697X | 1950-09-21 |
Publications (1)
Publication Number | Publication Date |
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US2660697A true US2660697A (en) | 1953-11-24 |
Family
ID=7996497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US247161A Expired - Lifetime US2660697A (en) | 1950-09-21 | 1951-09-18 | Selenium rectifier with varnish intermediate layers |
Country Status (2)
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US (1) | US2660697A (en) |
BE (1) | BE505958A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2815475A (en) * | 1951-10-29 | 1957-12-03 | Itt | Selenium rectifier |
US2828453A (en) * | 1955-06-15 | 1958-03-25 | Westinghouse Brake & Signal | Selenium rectifiers |
US3233309A (en) * | 1961-07-14 | 1966-02-08 | Siemens Ag | Method of producing electrically asymmetrical semiconductor device of symmetrical mechanical design |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE956435C (en) * | 1954-01-19 | 1957-01-17 | Siemens Ag | Dry rectifier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2485589A (en) * | 1944-11-02 | 1949-10-25 | Int Standard Electric Corp | Selenium rectifier and photocell |
-
0
- BE BE505958D patent/BE505958A/xx unknown
-
1951
- 1951-09-18 US US247161A patent/US2660697A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2485589A (en) * | 1944-11-02 | 1949-10-25 | Int Standard Electric Corp | Selenium rectifier and photocell |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2815475A (en) * | 1951-10-29 | 1957-12-03 | Itt | Selenium rectifier |
US2828453A (en) * | 1955-06-15 | 1958-03-25 | Westinghouse Brake & Signal | Selenium rectifiers |
US3233309A (en) * | 1961-07-14 | 1966-02-08 | Siemens Ag | Method of producing electrically asymmetrical semiconductor device of symmetrical mechanical design |
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BE505958A (en) |
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