US2462917A - Method of manufacturing rectifier elements - Google Patents
Method of manufacturing rectifier elements Download PDFInfo
- Publication number
- US2462917A US2462917A US593542A US59354245A US2462917A US 2462917 A US2462917 A US 2462917A US 593542 A US593542 A US 593542A US 59354245 A US59354245 A US 59354245A US 2462917 A US2462917 A US 2462917A
- Authority
- US
- United States
- Prior art keywords
- cadmium
- selenium
- organic
- electrolyte
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000000034 method Methods 0.000 description 26
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 19
- 239000011669 selenium Substances 0.000 description 19
- 229910052711 selenium Inorganic materials 0.000 description 19
- 229910052793 cadmium Inorganic materials 0.000 description 16
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 239000003792 electrolyte Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 159000000011 group IA salts Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Definitions
- the invention refers to a method of manufacturing rectifier elements, particularly those which can withstand a very high reverse voltage.
- the main object of the present invention to provide a method which will enable the rectifier element to withstand up to more than five times the normal reverse voltage.
- the object of the present invention is achieved by substituting the mentioned application of insulating lacquers or oxidizing agents to the metallic selenium surface by an electrolytic process to which the rectifier disc is subjected, after the selenium layer has been converted into its metallic state, in which process the rectifier disc is used as the cathode.
- the purpose of the electrolytic process is the application of a barrier layer comprising a metal organic polyselenide and, preferably, a cadmium organic'polyselenide or a tin organic polyselenide, respectively, depending on the use of cadmium or tin in the electrolyte or in the counterelectrode, or even in both.
- a barrier layer comprising a metal organic polyselenide and, preferably, a cadmium organic'polyselenide or a tin organic polyselenide, respectively, depending on the use of cadmium or tin in the electrolyte or in the counterelectrode, or even in both.
- any metal forming a basic plating solution can be used in the electrolytic process, the same metal which is to be plated being used as the anode.
- the applied current may vary from 2.5 ma. per em. up to 50 ma. per cm. of
- a cadmium, tin or any other metal as a lead anode capable of forming a basic plating solution is provided in the electrolytic process and a corresponding commercial cadmium plating solution (CdO-l-NaOI-I-l-NaCN) a commercial tin plating solution (NazSnOH-NaOH-l-NaCzHaOz) or any other basic plating solution which is,
- an alkaline hydroxide or an alkaline salt in addition to an organic agent is used as the electrolyte.
- a layer of cadmium, tin or other metal organic polyselenide which is a stable compound will be formed on the surface of the selenium layer. immediately in one-step upon application of the electrolytic process. 'I'hu's it can be seen that the layer of cadmium, tin or other metal organic polyselenide is here achieved as a result of the electrolytic process in one step even before providing the counter-electrode alloy, whereas according to the firstmentioned method two steps are necessary, namely the electrolytic process and the forming of the counter-electrode layer.
- the concentration of the electrolyte may be as low as necessary to merely maintain the conductivity of the solution. say about .001 normal, whereas the maximum'concentration to be used will be at the saturation point at room tempertration of the electrolyte, it can be seen that the grade of concentration of the electrolyte provides some means to control the results to be achieved.
- the electrolyte in the first as well as in the second modification of the method comprises in addition to the aqueous solution an organic agent.
- organic agents which are soluble in water can be used as addition to the electrolyte. Therefore, alcohols, aldehydes. ketones, acids, phenols, and the like can be used or also more than one of the mentioned products at the same time.
- the concentration of the organic agents will be at least and any higher concentration than the minimum value will yield high voltage rectifiers provided that the solution is still .electrically conductive at said particular concentration.
- Units subjected to the electrolytic process as given in Example 2 will withstand more than 100 volts A. C. in the reverse direction.
- the forward resistance will be relatively high and, therefore, it is not advisable to use such units for power rectification.
- these units may be used in such applications where high-D. C. voltages must be maintained while no current is drawn from the power supply, e. g. in maintaining electrostatic fields.
- Example 1 where hydroxide has been used as the electrolyte the organic agent was 10% by volume whereas the hydroxide solution was by volume.
- Example 2 where a salt solution is used as the electrolyte only 70% by volume of the salt is used, whereas the organic agent rises to 30% by volume.
- the organic. concentration is reduced to 5% instead of 0, or in Example 2 to 20% instead of 30, still higher than normal voltages can be recognized.
- the counter-electrode alloy will preferably always contain cadmium, though in the case of using a cadmium anode and a cadmium plating solution in the electrolytic process a counterelectrode alloy canbe used, which does not contain cadmium.
- the currents used in both mentioned modifications can vary from 2%.; ma. up to 50 ma. and the time within which the electrolytic process has to be performed is varied inversely as the current is used in attaining the same quality rectification and correspondingly the times varies from seconds down .to 7 seconds.
- the improvement that comprises, prior to application of the counter-electrode, making the selenium coated base plate the cathode during electrolysis of analkaiine aqueous electrolyte, the anode used in the electrolysis being ametal selected from the class consisting of tin andcadmium and the electrolyte comprising a solution for electroplating the metal of which the anode is formed and also including an organic substance selected from the class consisting of water soluble alcohols, water soluble aldehydes, water soluble ketones, water soluble organic acids, water soluble phenols.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Biotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Rectifiers (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE467627D BE467627A (de) | 1945-05-12 | ||
BE474674D BE474674A (de) | 1945-05-12 | ||
BE476268D BE476268A (de) | 1945-05-12 | ||
US593542A US2462917A (en) | 1945-05-12 | 1945-05-12 | Method of manufacturing rectifier elements |
US605616A US2459848A (en) | 1945-05-12 | 1945-07-17 | Rectifier element |
US605617A US2468131A (en) | 1945-05-12 | 1945-07-17 | Method of manufacturing rectifier elements |
GB12047/46A GB610999A (en) | 1945-05-12 | 1946-04-18 | Improvements in or relating to selenium rectifiers |
FR934443D FR934443A (fr) | 1945-05-12 | 1946-10-10 | Perfectionnements à la fabrication des éléments redresseurs |
FR934441D FR934441A (fr) | 1945-05-12 | 1946-10-10 | Perfectionnements aux méthodes de fabrication d'éléments redresseurs |
ES175262A ES175262A1 (es) | 1945-05-12 | 1946-10-10 | Mejoras en los métodos de fabricación de elementos rectificadores |
CH268668D CH268668A (fr) | 1945-05-12 | 1946-12-23 | Procédé de fabrication d'éléments redresseurs. |
DEF4320A DE846738C (de) | 1945-05-12 | 1950-10-01 | Verbesserung an Selengleichrichtern |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US593542A US2462917A (en) | 1945-05-12 | 1945-05-12 | Method of manufacturing rectifier elements |
US605617A US2468131A (en) | 1945-05-12 | 1945-07-17 | Method of manufacturing rectifier elements |
Publications (1)
Publication Number | Publication Date |
---|---|
US2462917A true US2462917A (en) | 1949-03-01 |
Family
ID=27081729
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US593542A Expired - Lifetime US2462917A (en) | 1945-05-12 | 1945-05-12 | Method of manufacturing rectifier elements |
US605617A Expired - Lifetime US2468131A (en) | 1945-05-12 | 1945-07-17 | Method of manufacturing rectifier elements |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US605617A Expired - Lifetime US2468131A (en) | 1945-05-12 | 1945-07-17 | Method of manufacturing rectifier elements |
Country Status (6)
Country | Link |
---|---|
US (2) | US2462917A (de) |
BE (3) | BE467627A (de) |
CH (1) | CH268668A (de) |
DE (1) | DE846738C (de) |
FR (2) | FR934443A (de) |
GB (1) | GB610999A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1118887B (de) * | 1959-04-13 | 1961-12-07 | Licentia Gmbh | Verfahren zur Herstellung von Selentrockengleichrichtern |
DE1160108B (de) * | 1960-09-14 | 1963-12-27 | Langbein Pfanhauser Werke Ag | Verfahren zur Herstellung von Selen-Trockengleichrichtern auf einer glatten Traegerelektrode |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB516137A (en) * | 1937-06-25 | 1939-12-22 | Philips Nv | Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity |
US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
US2266922A (en) * | 1938-12-28 | 1941-12-23 | Union Switch & Signal Co | Manufacture of alternating current rectifiers |
US2288318A (en) * | 1937-12-29 | 1942-06-30 | Du Pont | Electroplating process |
US2375355A (en) * | 1940-05-17 | 1945-05-08 | Bolidens Gruv Ab | Selenium rectifier |
US2391706A (en) * | 1940-10-10 | 1945-12-25 | Battelle Memorial Institute | Method of forming blocking layers on selenium coated plates |
US2406072A (en) * | 1941-02-15 | 1946-08-20 | Univ Ohio State Res Found | Electrodeposition of metals and bath composition therefor |
US2411560A (en) * | 1943-06-25 | 1946-11-26 | Fed Telephone & Radio Corp | Selenium element |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB302177A (de) * | 1927-12-10 | 1929-12-12 | Sueddeutsche Telefon-Apparate, Kabel- Und Drahtwerke, Aktiengesellschaft | |
NL57635C (de) * | 1938-09-09 |
-
0
- BE BE476268D patent/BE476268A/xx unknown
- BE BE474674D patent/BE474674A/xx unknown
- BE BE467627D patent/BE467627A/xx unknown
-
1945
- 1945-05-12 US US593542A patent/US2462917A/en not_active Expired - Lifetime
- 1945-07-17 US US605617A patent/US2468131A/en not_active Expired - Lifetime
-
1946
- 1946-04-18 GB GB12047/46A patent/GB610999A/en not_active Expired
- 1946-10-10 FR FR934443D patent/FR934443A/fr not_active Expired
- 1946-10-10 FR FR934441D patent/FR934441A/fr not_active Expired
- 1946-12-23 CH CH268668D patent/CH268668A/fr unknown
-
1950
- 1950-10-01 DE DEF4320A patent/DE846738C/de not_active Expired
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB516137A (en) * | 1937-06-25 | 1939-12-22 | Philips Nv | Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity |
US2288318A (en) * | 1937-12-29 | 1942-06-30 | Du Pont | Electroplating process |
US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
US2266922A (en) * | 1938-12-28 | 1941-12-23 | Union Switch & Signal Co | Manufacture of alternating current rectifiers |
US2375355A (en) * | 1940-05-17 | 1945-05-08 | Bolidens Gruv Ab | Selenium rectifier |
US2391706A (en) * | 1940-10-10 | 1945-12-25 | Battelle Memorial Institute | Method of forming blocking layers on selenium coated plates |
US2406072A (en) * | 1941-02-15 | 1946-08-20 | Univ Ohio State Res Found | Electrodeposition of metals and bath composition therefor |
US2411560A (en) * | 1943-06-25 | 1946-11-26 | Fed Telephone & Radio Corp | Selenium element |
Also Published As
Publication number | Publication date |
---|---|
FR934443A (fr) | 1948-05-21 |
BE476268A (de) | |
US2468131A (en) | 1949-04-26 |
BE474674A (de) | |
CH268668A (fr) | 1950-05-31 |
GB610999A (en) | 1948-10-22 |
DE846738C (de) | 1952-08-18 |
FR934441A (fr) | 1948-05-21 |
BE467627A (de) |
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