US2450886A - Semiconductor - Google Patents
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- Publication number
- US2450886A US2450886A US564408A US56440844A US2450886A US 2450886 A US2450886 A US 2450886A US 564408 A US564408 A US 564408A US 56440844 A US56440844 A US 56440844A US 2450886 A US2450886 A US 2450886A
- Authority
- US
- United States
- Prior art keywords
- selenium
- conductivity
- resistance
- semiconductor
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 21
- 229910052711 selenium Inorganic materials 0.000 description 20
- 239000011669 selenium Substances 0.000 description 20
- 239000000126 substance Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- VIEXQFHKRAHTQS-UHFFFAOYSA-N chloroselanyl selenohypochlorite Chemical compound Cl[Se][Se]Cl VIEXQFHKRAHTQS-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- -1 halogen salts Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Definitions
- the present invention relates to semi-conductors and particularl to high voltage selenium rectifiers.
- transition resistance must be as low as possible and must be independent of voltage if the operationof the rectifier is to be satisfactory.
- the characteristic resistance curve of the blocking layer itself is dependent upon its chemical and physical composition, and the magnitude of the resistances in both direction of current flow is primarily determined-by the conductivity of the selenium itself.
- the conductivity of .selenium can be materially increased by a thorough conversion into a crystalline form by annealing it at a temperature close to the melting point and that the conductivity of selenium. can be further increased by the addition of materials, such as pulverized halogen salts of heavy metals, alkalies, carbon powder, or organic compounds. After conversion the additional materials either appear as undecomposed matters having certain conductivity embodied in the selenium, or they are mainly decomposed into oxides or selenides of good conductivity. These latter are conductive bodies and form dangerous .shuntin'gpaths in the selenium and dangerous shunting paths in the selenium,. it.
- the main object of the present" invention to add such material to the selenium which not only avoids the formation of conducting residues in the selenium, and also avoids the formation of compounds of selenium with the metallic impurities, but at the same time increases the forward-conductivity of the rectifier without changing its reverse-conductivity, that means a decrease in the relation'of forward-resistance to back-resistance, and allows also higher voltage than achieved before.
- This main object is achieved by adding one substance of the group of I01, IBr, ICla, IBl'z.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
Patented Oct. 12, 1948 SEMICONDUCTOR Charles Alexander Eccoflery, East Orange, N. 3.,
and MadelineDuane Merva, Bernice, Pa... assignors to Federal Telephone and'liadlo Corporation, New York, N. Y., a corporation of Delaware -No Drawing- Application November 20, 1944,
Serial No. 564,408
1 Claim. (or. 175-366) The present invention relates to semi-conductors and particularl to high voltage selenium rectifiers.
It .is quite important for dry type rectifiers, such as selenium rectifiers, that the forward-resistance ls as low as possible and the back-resistance high. The resistance .in the direction of flow is .dependent upon the resistance of the semi-conducting layer, governed to a certain extent by the resistance voltage drop, the trend of the current-voltage curve, of the back-resistance layer,
f and the transition resistancevof the semi-conducting surface to the supply electrode. This transition resistance must be as low as possible and must be independent of voltage if the operationof the rectifier is to be satisfactory. The characteristic resistance curve of the blocking layer itself is dependent upon its chemical and physical composition, and the magnitude of the resistances in both direction of current flow is primarily determined-by the conductivity of the selenium itself.
It has been recognized before that the conductivity of .selenium can be materially increased by a thorough conversion into a crystalline form by annealing it at a temperature close to the melting point and that the conductivity of selenium. can be further increased by the addition of materials, such as pulverized halogen salts of heavy metals, alkalies, carbon powder, or organic compounds. After conversion the additional materials either appear as undecomposed matters having certain conductivity embodied in the selenium, or they are mainly decomposed into oxides or selenides of good conductivity. These latter are conductive bodies and form dangerous .shuntin'gpaths in the selenium and dangerous shunting paths in the selenium,. it.
has been suggested to admix selenium-chloride or selenium-bromide to the selenium and to achieve in this way a better mixture between the halogens and the selenium, the latter being then essentially devoid of conducting residues.
The admixture of selenium-chloride or selenium-bromide brought about an increase in the forward-conductivity of the blockin layer, but at the same time a proportionate increase in the back-conductivity had to be accepted.
Although the later proposal appeared to be another step in the advancement of the art, it did not provide satisfaction in those cases in which it was essential to increase the forwardconductivity of the rectifier without increasing at the same time the reverse-conductivity.
It is, therefore, the main object of the present" invention to add such material to the selenium which not only avoids the formation of conducting residues in the selenium, and also avoids the formation of compounds of selenium with the metallic impurities, but at the same time increases the forward-conductivity of the rectifier without changing its reverse-conductivity, that means a decrease in the relation'of forward-resistance to back-resistance, and allows also higher voltage than achieved before. This main object is achieved by adding one substance of the group of I01, IBr, ICla, IBl'z.
It is a further object of the present invention to provide one substance of the above mentioned group in relation of 100 weight parts of selenium to from .001 up to .5 weight part of the mentioned substance.
It is still another object of the present invention to provide a method of producing a semiconductor for selenium rectifiers which comprises admixing selenium with one substance from the group of ICl, IBr, ICls, IBr: in the mentioned relation. 4
For the achievement of the best possible con ductivity and the highest increase of the forward-conductivity of the semi-conducting layer 4 pound and mix it with the selenium powder, an-
other is to put the halogen compound such as I01 and IBI3, into a crucible, which compound is covered thereafter with selenium, usingthe capacity of the mentioned compound to harden at a tempei'ature slightly -below ordinary room temperature and to change into tumes by heat-- in: up' the crucible. thereby streaming through the selenium positioned above it and mixing invention in connection .with severaldiflerent embodiments. it willbe understood that these embodiments are given by way 0! example only and not as limiting the scope of the invention as 15 set ioxjth in the objects and the appended claim.
What we claim is: In a process for manuiacturin: selenium rectiller elements the improvement that incorporating in the selenium lave: a minor brortion' oi a single substance selected from the class cmsistlna of iodine compounds 0! luorine' s andiodinecompmndsot bromine.
CHARLES ALEXANDER nscommr. mmmmn DUANE mwu ans-nuances cnlm 10 The following references are oi'recordin the tile ol this patent: v
' UNITED STATES PATENTS Number Name Date 2,173,249 Boer et al Sept. 19, 1989 2,226,715 Gelsler Dec. 81, 1940 2,227,827. Dubar Jan. 7, 1941 Waibel Apr. 20, 1943
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US564408A US2450886A (en) | 1944-11-20 | 1944-11-20 | Semiconductor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US564409A US2450887A (en) | 1944-11-20 | 1944-11-20 | Semiconductor |
US564408A US2450886A (en) | 1944-11-20 | 1944-11-20 | Semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
US2450886A true US2450886A (en) | 1948-10-12 |
Family
ID=27073540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US564408A Expired - Lifetime US2450886A (en) | 1944-11-20 | 1944-11-20 | Semiconductor |
Country Status (1)
Country | Link |
---|---|
US (1) | US2450886A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2856364A (en) * | 1955-05-31 | 1958-10-14 | Itt | Selenium rectifiers |
US3770506A (en) * | 1969-03-20 | 1973-11-06 | Standard Oil Co | Electrical energy storage device containing a tellurium additive |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2173249A (en) * | 1935-10-30 | 1939-09-19 | Philips Nv | Asymmetric electrode system |
US2226715A (en) * | 1939-03-08 | 1940-12-31 | Suddeutsche App Fabrik G M B H | Rectifier device |
US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
US2316905A (en) * | 1939-07-01 | 1943-04-20 | Westinghouse Electric & Mfg Co | Selenium rectifier |
-
1944
- 1944-11-20 US US564408A patent/US2450886A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2173249A (en) * | 1935-10-30 | 1939-09-19 | Philips Nv | Asymmetric electrode system |
US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
US2226715A (en) * | 1939-03-08 | 1940-12-31 | Suddeutsche App Fabrik G M B H | Rectifier device |
US2316905A (en) * | 1939-07-01 | 1943-04-20 | Westinghouse Electric & Mfg Co | Selenium rectifier |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2856364A (en) * | 1955-05-31 | 1958-10-14 | Itt | Selenium rectifiers |
US3770506A (en) * | 1969-03-20 | 1973-11-06 | Standard Oil Co | Electrical energy storage device containing a tellurium additive |
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