US2378438A - Method of making selenium elements - Google Patents
Method of making selenium elements Download PDFInfo
- Publication number
- US2378438A US2378438A US485380A US48538043A US2378438A US 2378438 A US2378438 A US 2378438A US 485380 A US485380 A US 485380A US 48538043 A US48538043 A US 48538043A US 2378438 A US2378438 A US 2378438A
- Authority
- US
- United States
- Prior art keywords
- selenium
- base plate
- powder
- making
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 53
- 229910052711 selenium Inorganic materials 0.000 title description 42
- 239000011669 selenium Substances 0.000 title description 42
- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000000843 powder Substances 0.000 description 12
- 238000007664 blowing Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 101100127891 Caenorhabditis elegans let-4 gene Proteins 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910000634 wood's metal Inorganic materials 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Definitions
- This invention relates to selenium elements and particularly to'a method of making them and has for itsobiect to improve and facilitate the making of such elements.
- selenium elements such as rectifiers and photocells commonly consist of an adherent layer of crystalline selenium on 'a carrier plate and s. counter-electrode over the selenium.
- Such elements have been made by spreadin molten selenium over the base plate, allowing it to cool and harden and then crystallizing the hardened selenium by means of a heat treatment, after which the counter-electrode has been applied, commonly by spraying a molten alloy such as Woods metal over the selenium surface.
- the selenium is applied to the base plate by blowing it on in powdered form under. considerable pressure while the base plate is maintained at an-elevated temperature. Under these conditions the powder particles, by a sintering action, adhere to the baseplate and closely adhere to each other forming a thin solid layer of selenium. After a suitable thickness of the layer has been blown on in this manner. the element is further heat-treated and provided with a counter-electrode in the usual manner.
- FIG. 1 illustrates a perspective view of apparatus for spraying the selenium on the base plate
- Fig. 2 illustrates a faceview of a seleniumcoated element
- Fig. 3 illustrates a sectional view of the element shown in Fig. 2.
- the base plate I may be in the usual form of a disc such as iron or steel or aluminum or the like and is ordinarily roughened and may be nickel plated if desired. According the arrow.
- the front end of hose I terminates in a mouth 6, which may be of glass, having a nozzle I which enters the throat of an elongated receptacle 8, which may also be glass, in which it is held by a suitable stopper 9 which may be for example of rubber having a hole through it which (fits over mouth 6.
- the delivery end ll! of receptacle 8 is narrowed down as shown and preferably filled with a suitable filtering device such as a wad of steel wool H to act" as a filter for powder passing through it.
- the disc is shown with a central hole 2.
- the disc is placed on a table 3 which is heated preferably to a temperature at which the powder particles will adhere to the base plate and closely adhere to each other to form a coherentor solid layer of selenium, suitable temperatures under said conditions being within the range of about 100 to element in is shown for'this purpose.
- the upper surface of the base plate is sprayed from a spray nozzle l3 with a let 4 of selenium powder under substantial pressure, as shown.
- the spraying apparatus comprises a tubing or i which may be of rubber, into which comair is blown in the direction shown by 150' C.
- An electric heating end l0 a tubing l2, for example rubber, which terminates in the nozzle [3, which may be of glass.
- the selenium powder I4 is placed-in the enlarged receptacle 8 so that when the compressed air or other compressed fluid is blown into receptacle 8, the powder is blown through filter ll. into tube ID from whence it is blown through spray nozzle l3 under high velocity on to'the base plate.
- the selenium powder may be made in a well-known manner, for example, by melting solenium and then grinding-it up into the powder form.
- the air pressure used is not especially critical but should be suflicient to produce a good adherence of the selenium on the plate. It the pressure istoo low, it may be foundthat the adherence will be poor and there is furthermore not as good an effect on the electrical properties.
- the selenium powder thus blown on the base plate i apparently softens orsinters somewhat upon striking the heated plate and the powder particles adhere to the plate and to each other forming a uniform layer of the desired thickness.
- a suitable thickness for the layer is around .004 to .008 inch.
- the high pressure propulsion of the powder on the heated plate has a beneficial effect on the selenium element because itis found that the selenium can be placed in a satisfactory conductive condition by a..simp1e heat treatment in an oven at a temperature "somewhat below the melting point of selenium, for example around 200 C. to 214C. for about a half hour or thereabout and without the necessity for the application of further pressure on the
- the selenium may then be given any suitable surface treatment, as desired, following which the counter-electrode may be applied. r.
- Figs. 2 and 3 show a selenium element made according to Fig. 1, with the layer I! 01' selenium on the base plate and the counter-electrode alloy l6 over the selenium. To place it in condition it need only be electro-formed by the application of a steady or pulsating D. C. voltage in the direction opposite the direction of normal forward current flow.
- the method of making a selenium element which comprises blowing selenium powder under air pressure on a base plate heated to a temperature at which the powder particles adhere to each other'and to the carrier plate.
- the method of making a selenium element which comprises blowing selenium powder by pressure on a base plate heated to about 100 to 150 C., then further heat-treating the seleniumcoated element at an elevated temperature somewhat'below the melting point of selenium and then placing a counter-electrode layer over the selenium surface.
- the method of making a selenium element which comprises forming a sintered layer of selenium on a base plate by propelling selenium powder against the base plate heated to sintering temperature at a velocity suflicient to produce good adhesion, and thereafter consolidating the selenium by heat treatment at an elevated temperature somewhat below the melting point of selenium.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Coating By Spraying Or Casting (AREA)
Description
June 19, 1945. IQ s s w ETAL 2,378,438
' METHOD OF MAKING SELENIUM ELEMENTS Filed May 1, 1943 IN VEN TORS orro 545 V Patented June 19 1945 METHOD or MAKING SELENIUM ELEMENTS Otto Saslaw, Lyndlmrst, and Harry Carlson, Newark, N. J., asslgnors to Federal Telephone & Radio Corporation, New York, N. Y., a corporation of Delaware ApplicationMay 1, 1943, Serial No. 485,280-
rciaims. (c1. its-306) s This invention relates to selenium elements and particularly to'a method of making them and has for itsobiect to improve and facilitate the making of such elements.
As is well known, selenium elements such as rectifiers and photocells commonly consist of an adherent layer of crystalline selenium on 'a carrier plate and s. counter-electrode over the selenium.
Such elements have been made by spreadin molten selenium over the base plate, allowing it to cool and harden and then crystallizing the hardened selenium by means of a heat treatment, after which the counter-electrode has been applied, commonly by spraying a molten alloy such as Woods metal over the selenium surface.
According to my invention the selenium is applied to the base plate by blowing it on in powdered form under. considerable pressure while the base plate is maintained at an-elevated temperature. Under these conditions the powder particles, by a sintering action, adhere to the baseplate and closely adhere to each other forming a thin solid layer of selenium. After a suitable thickness of the layer has been blown on in this manner. the element is further heat-treated and provided with a counter-electrode in the usual manner.
The invention will be better understood from the following detailed description in conjunction with the accompanying drawing; of which Fig. 1 illustrates a perspective view of apparatus for spraying the selenium on the base plate;
Fig. 2 illustrates a faceview of a seleniumcoated element; and
Fig. 3 illustrates a sectional view of the element shown in Fig. 2.
Referring to Fig. 1, the base plate I may be in the usual form of a disc such as iron or steel or aluminum or the like and is ordinarily roughened and may be nickel plated if desired. According the arrow. The front end of hose I terminates in a mouth 6, which may be of glass, having a nozzle I which enters the throat of an elongated receptacle 8, which may also be glass, in which it is held by a suitable stopper 9 which may be for example of rubber having a hole through it which (fits over mouth 6. The delivery end ll! of receptacle 8 is narrowed down as shown and preferably filled with a suitable filtering device such as a wad of steel wool H to act" as a filter for powder passing through it. There is fitted over delivery to a"- oommon practice the disc is shown with a central hole 2. The disc is placed on a table 3 which is heated preferably to a temperature at which the powder particles will adhere to the base plate and closely adhere to each other to form a coherentor solid layer of selenium, suitable temperatures under said conditions being within the range of about 100 to element in is shown for'this purpose. The upper surface of the base plate is sprayed from a spray nozzle l3 with a let 4 of selenium powder under substantial pressure, as shown. The spraying apparatus comprises a tubing or i which may be of rubber, into which comair is blown in the direction shown by 150' C. An electric heating end l0 a tubing l2, for example rubber, which terminates in the nozzle [3, which may be of glass.
The selenium powder I4 is placed-in the enlarged receptacle 8 so that when the compressed air or other compressed fluid is blown into receptacle 8, the powder is blown through filter ll. into tube ID from whence it is blown through spray nozzle l3 under high velocity on to'the base plate. The selenium powder may be made in a well-known manner, for example, by melting solenium and then grinding-it up into the powder form. The air pressure used is not especially critical but should be suflicient to produce a good adherence of the selenium on the plate. It the pressure istoo low, it may be foundthat the adherence will be poor and there is furthermore not as good an effect on the electrical properties. An air pressure of 5 to 7 pounds per square inch has been used satisfactorily and the allowable presthe powder velocity will be correlated, with the base plate temperature so that-the combined ef- 3 feet will produce ,the required coalescence. Thishas been referred to herein as sintering; but the invention will be operativewhenever the powder particles adhere to each other and to the base 'plateto form the required solid layer of selenium,
regardless of whether this coalescence may accurately be described technically as sintering.
The selenium powder thus blown on the base plate i apparently softens orsinters somewhat upon striking the heated plate and the powder particles adhere to the plate and to each other forming a uniform layer of the desired thickness. A suitable thickness for the layer is around .004 to .008 inch. The high pressure propulsion of the powder on the heated plate has a beneficial effect on the selenium element because itis found that the selenium can be placed in a satisfactory conductive condition by a..simp1e heat treatment in an oven at a temperature "somewhat below the melting point of selenium, for example around 200 C. to 214C. for about a half hour or thereabout and without the necessity for the application of further pressure on the The selenium may then be given any suitable surface treatment, as desired, following which the counter-electrode may be applied. r.
Figs. 2 and 3 show a selenium element made according to Fig. 1, with the layer I! 01' selenium on the base plate and the counter-electrode alloy l6 over the selenium. To place it in condition it need only be electro-formed by the application of a steady or pulsating D. C. voltage in the direction opposite the direction of normal forward current flow.
By propelling the powder on the heated plate in accordance with this invention there is provided a single method of producing a crystalline selenium layer on a carrier plate, which requires only a relatively short and simple heat treatment thereafter. The usual heat treatment over a much longer period of time, involving the application of pressure against the selenium by means of a pressure plate, is avoided.
What isclaimed is:
1. The method of making a selenium element which comprises blowing selenium powder under pressure on a heated base plate.
2. The method of making a selenium element which comprises blowing selenium powder under air pressure on a base plate heated to a temperature at which the powder particles adhere to each other'and to the carrier plate.
3. The method of making a selenium element which comprises blowing selenium powder by pressure on a base plate heated to a temperature at which the powder particles adhere to each other and to the base plate and then further heattreating the selenium-coated element at a temperature somewhat below the melting point of selenium.
4. The method or making a selenium element which comprises blowing selenium powder on a base plate at a pressure of around five to seven pounds per square inch, said base plate being heated to about to C. and then further heat-treating the selenium-coated element at a temperature somewhat below the melting point of selenium.
5. The method of making a selenium element which comprises blowing selenium powder by pressure on a base plate heated to about 100 to 150 C., then further heat-treating the seleniumcoated element at an elevated temperature somewhat'below the melting point of selenium and then placing a counter-electrode layer over the selenium surface.
6. The method of making a selenium element which comprises blowing selenium powder by pressure on a base plate heated to about 100 to 150 0., then further heat-treating the seleniumcoated element at an elevated temperature somewhat below the melting point of selenium, then applying a counter-electrode layer over the seleniuni surface and then electro-forming the element by applying to it a D. C. voltage in the direction opposite that of normal forward current flow.
'7. The method of making a selenium element which comprises forming a sintered layer of selenium on a base plate by propelling selenium powder against the base plate heated to sintering temperature at a velocity suflicient to produce good adhesion, and thereafter consolidating the selenium by heat treatment at an elevated temperature somewhat below the melting point of selenium.
' OTTO SASLAW.
HARRY CARLSON.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE469516D BE469516A (en) | 1943-05-01 | ||
US485380A US2378438A (en) | 1943-05-01 | 1943-05-01 | Method of making selenium elements |
GB7988/44A GB582214A (en) | 1943-05-01 | 1944-04-28 | Method of making selenium elements |
FR939011D FR939011A (en) | 1943-05-01 | 1946-03-21 | Improvements in the production of selenium cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US485380A US2378438A (en) | 1943-05-01 | 1943-05-01 | Method of making selenium elements |
Publications (1)
Publication Number | Publication Date |
---|---|
US2378438A true US2378438A (en) | 1945-06-19 |
Family
ID=23927931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US485380A Expired - Lifetime US2378438A (en) | 1943-05-01 | 1943-05-01 | Method of making selenium elements |
Country Status (4)
Country | Link |
---|---|
US (1) | US2378438A (en) |
BE (1) | BE469516A (en) |
FR (1) | FR939011A (en) |
GB (1) | GB582214A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2491199A (en) * | 1944-12-15 | 1949-12-13 | Hartford Nat Bank & Trust Co | Photoelectric cell and method of manufacturing it |
US2575388A (en) * | 1947-01-06 | 1951-11-20 | Vickers Inc | Electrical rectifiers |
US2599478A (en) * | 1948-03-15 | 1952-06-03 | Vickers Inc | Apparatus for making devices which have selenium as constituent parts thereof |
US2680652A (en) * | 1946-02-15 | 1954-06-08 | Babcock & Wilcox Co | Atomizer |
US2760483A (en) * | 1953-10-29 | 1956-08-28 | Tassicker Graham Edward | Retinal stimulator |
US2869850A (en) * | 1954-03-17 | 1959-01-20 | Union Carbide Corp | Preparation of ore and method of heat treatment |
US2877284A (en) * | 1950-05-23 | 1959-03-10 | Rca Corp | Photovoltaic apparatus |
US20150182987A1 (en) * | 2012-08-30 | 2015-07-02 | Wieland-Werke Ag | Movable mask for a thermal and/or kinetic coating system |
-
0
- BE BE469516D patent/BE469516A/xx unknown
-
1943
- 1943-05-01 US US485380A patent/US2378438A/en not_active Expired - Lifetime
-
1944
- 1944-04-28 GB GB7988/44A patent/GB582214A/en not_active Expired
-
1946
- 1946-03-21 FR FR939011D patent/FR939011A/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2491199A (en) * | 1944-12-15 | 1949-12-13 | Hartford Nat Bank & Trust Co | Photoelectric cell and method of manufacturing it |
US2680652A (en) * | 1946-02-15 | 1954-06-08 | Babcock & Wilcox Co | Atomizer |
US2575388A (en) * | 1947-01-06 | 1951-11-20 | Vickers Inc | Electrical rectifiers |
US2599478A (en) * | 1948-03-15 | 1952-06-03 | Vickers Inc | Apparatus for making devices which have selenium as constituent parts thereof |
US2877284A (en) * | 1950-05-23 | 1959-03-10 | Rca Corp | Photovoltaic apparatus |
US2760483A (en) * | 1953-10-29 | 1956-08-28 | Tassicker Graham Edward | Retinal stimulator |
US2869850A (en) * | 1954-03-17 | 1959-01-20 | Union Carbide Corp | Preparation of ore and method of heat treatment |
US20150182987A1 (en) * | 2012-08-30 | 2015-07-02 | Wieland-Werke Ag | Movable mask for a thermal and/or kinetic coating system |
Also Published As
Publication number | Publication date |
---|---|
GB582214A (en) | 1946-11-08 |
FR939011A (en) | 1948-11-02 |
BE469516A (en) | 1900-01-01 |
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