US20230260780A1 - Method for cleaning substrate and cleaning device - Google Patents
Method for cleaning substrate and cleaning device Download PDFInfo
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- US20230260780A1 US20230260780A1 US18/296,816 US202318296816A US2023260780A1 US 20230260780 A1 US20230260780 A1 US 20230260780A1 US 202318296816 A US202318296816 A US 202318296816A US 2023260780 A1 US2023260780 A1 US 2023260780A1
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004140 cleaning Methods 0.000 title claims description 86
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/041—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
- B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Definitions
- Embodiments described herein relate generally to a method for cleaning a substrate and a substrate cleaning device.
- Imprint lithography is a lithography technique for miniaturizing a semiconductor device.
- an imprint lithography template (hereinafter, referred to as a template) is used as a transfer a medium of an original pattern.
- the template is a substrate, for example, a glass substrate.
- the template is placed into contact with a resist layer formed on a semiconductor wafer or the like.
- the original pattern that is provided on a patterned surface of the template is transferred to the resist layer by the template. Since the template serves as the transfer medium, the patterned surface is required to be maintained at a high degree of cleanliness with very little foreign matter such as particles.
- FIG. 1 is a flow chart illustrating an example of a method for cleaning a substrate according to a first embodiment.
- FIG. 2 is a schematic cross-sectional view illustrating an example of a template.
- FIGS. 3 A to 3 F are schematic cross-sectional views illustrating an example of the method for cleaning a substrate according to the first embodiment.
- FIG. 4 is a diagram schematically illustrating a relationship between a time and a temperature of a liquid film.
- FIG. 5 is a flow chart illustrating an example of Step ST 3 .
- FIG. 6 is a diagram schematically illustrating a relationship between the time and the temperature of a liquid film in a reference example.
- FIG. 7 is a diagram schematically illustrating a relationship between the time and the temperature of a liquid film in an embodiment.
- FIG. 8 is a schematic cross-sectional view schematically illustrating a cleaning device of a substrate according to a first example.
- FIG. 9 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a second example.
- FIG. 10 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a third example.
- FIG. 11 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fourth example.
- FIG. 12 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fifth example.
- FIG. 13 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a sixth example.
- Embodiments provide a method for cleaning a substrate and a cleaning device which are capable of obtaining a substrate with a high degree of cleanliness of a patterned surface thereof.
- a method for cleaning a substrate includes supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.
- FIG. 1 is a flow chart illustrating an example of a method for cleaning a substrate according to a first embodiment.
- FIG. 2 is a schematic cross-sectional view illustrating an example of a template.
- FIGS. 3 A to 3 F are schematic cross-sectional views illustrating an example of the method for cleaning a substrate according to the first exemplary embodiment.
- a substrate to be processed is carried into a processing chamber of the cleaning device.
- an example of the substrate to be processed is, for example, a template 10 to be used for nanoimprint lithography.
- the template 10 includes, for example, a quartz substrate 1.
- a convex shaped mesa 2 (consisting of protrusions and depressions) is provided on a patterned surface 1 a of the quartz substrate 1.
- a patterned region 3 is provided in the mesa 2 .
- the template 10 is an “original pattern” of a lithography process in a manufacturing process of a semiconductor device.
- the patterned region 3 of the template 10 is pressed against, for example, a resist layer on a semiconductor wafer. Therefore, a pattern corresponding to the pattern provided on the patterned region 3 is transferred to the resist layer, for example.
- the pattern provided on the patterned region 3 corresponds to a wiring pattern or an open hole pattern of the semiconductor device.
- a line and space (L/S) pattern is formed as a pattern on the patterned region 3 .
- An example of the L/S pattern is a pattern with a half pitch of about 20 nm and a depth of about 40 nm.
- about 20 small particles having a size of about 15 nm or less, may be present on such a patterned surface 1 a of the template 10 . It is difficult to remove the small particles only by cleaning with an alkaline cleaning liquid and an acidic cleaning liquid. In the embodiment, the following cleaning methods are performed subsequent to cleaning using the alkaline cleaning liquid and the acidic cleaning liquid, for example.
- the template 10 is mounted on a stage 11 provided in a chamber (not illustrated) of the cleaning device.
- a plurality of lift pins 12 are provided on a mounting surface 11 a of the stage 11 .
- the lift pins 12 move in a vertical direction with respect to the mounting surface 11 a .
- the template 10 is supported on the mounting surface 11 a by the lift pins 12 .
- a liquid (to be solidified) 13 is supplied onto the template 10 (substrate to be processed) 10 as the template 10 is rotated. Therefore, for example, a liquid film 14 is formed on the patterned surface 1 a on the template 10 .
- An example of the liquid 13 is deionized water (DIW).
- DIW deionized water
- an alkaline liquid, an organic solvent, an aqueous solution containing a surfactant, or the like can be used in addition to the DIW.
- the patterned surface 1 a may be hydrophilized, for example.
- hydrophilizing the patterned surface 1 a it becomes easier to form the liquid film 14 on the patterned surface 1 a as compared with a case without hydrophilizing the patterned surface 1 a .
- An example of a hydrophilization processing is a process of treating the patterned surface 1 a with UV light.
- Step ST 2 may be performed in a state where the template (substrate to be processed) 10 is cooled.
- the template 10 may be previously cooled.
- the liquid 13 is supplied onto the previously cooled template 10 .
- a cooling gas 15 is discharged to the back surface of the template 10 to cool the liquid film 14 , and the liquid 3 is solidified.
- An example of the cooling gas 15 is a nitrogen (N 2 ) gas. Cooling of the liquid film 14 may be a so-called “refrigerator system” of maintaining the inside the chamber at a low temperature in addition to discharging of the cooling gas 15 .
- FIG. 4 is a diagram schematically illustrating a relationship between the time and the temperature of the liquid film 14 .
- FIG. 5 is a flow chart illustrating an example of Step ST 3 .
- the liquid to be solidified is, for example, the DIW.
- a freezing point of the DIW under “1 atmosphere” is “0° C.”. Even if the temperature under the “1 atmosphere” is lower than 0° C., the DIW can be maintained in a liquid state, a so-called “supercooled state”.
- the liquid film 4 is cooled to a temperature lower than the freezing point of the liquid to be solidified. Therefore, as illustrated in Step ST 31 in FIG. 5 , the liquid film (liquid 13 to be solidified) 14 is cooled in a state of supercooling.
- a “set temperature” is set to a temperature zone in which the liquid film 14 is supercooled.
- the “set temperature” is a temperature at which the supercooled liquid film 14 is solidified.
- An example of the range of the “set temperature” is equal to or higher than -40° C. and lower than 0° C. under a pressure of “1 atmosphere”.
- the temperature of the liquid film (liquid 13 to be solidified) 14 is measured as illustrated in Step ST 32 in FIG. 5 .
- the temperature of the liquid film 14 is measured using a non-contact infrared thermometer, for example.
- a thermocouple, a resistance thermometer, or the like can be used in addition to the non-contact infrared thermometer.
- Step ST 33 it is determined whether the temperature of the liquid film 14 reaches the set temperature. In a case where the temperature does not reach the set temperature (NO), the cooling is continued. In a case where the temperature reaches the set temperature (YES), as illustrated in Step ST 34 , an internal pressure of the liquid film (liquid to be solidified) 14 is varied.
- the internal pressure of the liquid film 14 in a state of supercooling is varied and the liquid film 14 is solidified.
- the internal pressure of the liquid film 14 can be varied by the following feature.
- the acoustic wave may be an ultrasound wave.
- An example of (5) is to cause a pole or vibrating member to contact the supercooled state liquid film 14 .
- the nozzle which is provided in the cleaning device, for example, a DIW supplying nozzle or the like may be in contact with the liquid film 14 .
- a melting liquid 16 is supplied to the solidified film 14 a and the solidified body of the liquid to be solidified is melted in a state where the template 10 is rotated.
- An example of the melting liquid 16 is DIW.
- the melting liquid 16 may be any fluid.
- the fluid may be a gas.
- the fluid may be temperature-regulated.
- the fluid is not only supplied to the solidified film 14 a but also may be in contact with the solidified film 14 a .
- the solidified film 14 a may also be naturally thawed without using the melting liquid 16 .
- a rinsing liquid 17 is supplied to the template 10 and the template (substrate to be processed) 10 is rinsed in a state where the template 10 is rotated.
- An example of the rinsing liquid 17 is DIW.
- the rinsing liquid 17 and the melted liquid film 14 are removed from the patterned surface 1 a of the template 10 by increasing the rotational speed of the template 10 , for example.
- the reference example is a case where the liquid film 14 is solidified without being in a supercooled state.
- the internal pressure of the liquid film 14 is varied. After the internal pressure is varied, the liquid film 14 is solidified.
- the number of the small particles is about 20 particles before cleaning. After cleaning, the number of the small particles is decreased to about 1 to 3 particles.
- a set temperature “A” illustrated in FIG. 7 is the set temperature illustrated in FIG. 4 . The set temperature “A” is lower than the set temperature “B”.
- a second embodiment is an example of a cleaning device that is capable of executing the method for cleaning a substrate according to the first embodiment.
- a first example to a sixth example of the cleaning device will be described.
- FIG. 8 is a schematic cross-sectional view schematically illustrating a cleaning device of a substrate according to a first example.
- the cleaning device 20 a according to a first example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- the cleaning device 20 a includes a cleaning cup 21 , a liquid supplying mechanism 22 , a driving mechanism 23 , a cooling gas supplying mechanism 24 , a thermometer 25 , and a control device 26 a .
- a shape of the cleaning cup 21 is, for example, cylindrical.
- the stage 11 is accommodated in the cylindrical cleaning cup 21 .
- a liquid supplying nozzle 30 is arranged above the template 10 .
- the liquid supplying nozzle 30 is connected to the liquid supplying mechanism 22 .
- the liquid supplying mechanism 22 supplies the liquid to be solidified onto the patterned surface 1 a of the template 10 through the liquid supplying nozzle 30 .
- the lift pins 12 are provided inside the stage 11 .
- the stage 11 is supported by a shaft 31 .
- the lift pins 12 and the shaft 31 are connected to the driving mechanism 23 .
- the driving mechanism 23 includes a lift pin driving portion that drives the lift pins 12 and a shaft driving portion that drives the shaft 31 .
- FIG. 8 details of the lift pin driving portion and the details of the shaft driving portion will be omitted.
- the lift pin driving portion and the shaft driving portion may have a well-known structure, for example.
- the lift pin driving portion moves the lift pins 12 vertically in a vertical direction with respect to the mounting surface 11 a . Therefore, the template 10 is moved vertically with respect to the mounting surface 11 a .
- the shaft driving portion rotates the shaft 31 . Therefore, the template 10 is rotated in a horizontal direction with respect to the mounting surface 11 a .
- a cooling gas supplying pipe 32 is provided in the shaft 31 , for example.
- the cooling gas supplying pipe 32 is connected to the cooling gas supplying mechanism 24 .
- the cooling gas supplying mechanism 24 supplies the cooling gas, for example, to the rear surface of the template 10 through the cooling gas supplying pipe 32 .
- the thermometer 25 is arranged above the template 10 .
- the thermometer 25 measures the temperature of the liquid film 14 formed on the template 10 .
- An example of the thermometer 25 is a non-contact infrared thermometer.
- a thermocouple, a resistance thermometer, or the like may be used in addition to the non-contact infrared thermometer.
- the control device 26 a controls the driving mechanism 23 to change the rotational speed of the template 10 . Therefore, the liquid film 14 in a state of supercooling is solidified.
- the change of the rotation speed may be acceleration or deceleration.
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 a according to the first example as illustrated in FIG. 8 , for example.
- FIG. 9 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a second example.
- the cross-section illustrated in FIG. 9 corresponds to the cross-section illustrated in FIG. 8 .
- the cleaning device 20 b according to a second example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- a difference between the cleaning device 20 b according to the second example and the first example illustrated in FIG. 8 is that the second example further includes a second liquid supplying nozzle 33 .
- the second liquid supplying nozzle 33 is arranged above the template 10 .
- the liquid supplying nozzle 30 is connected to the liquid supplying mechanism 22 .
- the liquid supplying mechanism 22 of the second example further includes a portion where a liquid for applying a stimulus to the liquid film 14 (hereinafter, referred to as a dropping liquid) is supplied in addition to the portion where the liquid to be solidified is supplied.
- the liquid supplying mechanism 22 of the second example supplies the dropping liquid onto the patterned surface 1 a of the template 10 through the second liquid supplying nozzle 33 .
- a control device 26 b controls the liquid supplying mechanism 22 to drop the dropping liquid onto the liquid film 14 . Therefore, the liquid film 14 in a state of supercooling is solidified. Fine beads, for example, PSL beads may be contained in the dripping liquid.
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 b according to the second example as illustrated in FIG. 9 , for example.
- FIG. 10 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a third example.
- the cross-section illustrated in FIG. 10 corresponds to the cross-section illustrated in FIG. 8 .
- the cleaning device 20 c according to a third example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- the third example further includes an ultrasound wave generating device 34 .
- the ultrasound wave generating device 34 is arranged above the template 10 , for example.
- the ultrasound wave generating device 34 is not limited to above the template 10 , and may be arranged at a position where the acoustic wave can be applied to the liquid film 14 .
- the ultrasound wave generating device 34 is connected to a control device 26 c .
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 c according to the third example as illustrated in FIG. 10 , for example.
- FIG. 11 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fourth example.
- the cross-section illustrated in FIG. 11 corresponds to the cross-section illustrated in FIG. 8 .
- the cleaning device 20 d according to a fourth example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- the cleaning device 20 d according to the fourth example has substantially the same structure as the first example illustrated in FIG. 8 .
- the difference is the control method of a control device 26 d .
- the control device 26 d instructs the lift pin driving portion of the driving mechanism 23 to move the lift pins 12 , vertically.
- the driving mechanism 23 receiving the command moves the lift pins 12 vertically.
- the template 10 is vibrated.
- the internal pressure of the liquid film 14 in a state of supercooling is changed.
- the liquid film 14 in a state of supercooling is solidified.
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 d according to the fourth example as illustrated in FIG. 11 , for example.
- FIG. 12 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fifth example.
- the cross-section illustrated in FIG. 12 corresponds to the cross-section illustrated in FIG. 8 .
- the cleaning device 20 e according to a fifth example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- a difference between the cleaning device 20 e according to the fifth example and the first example illustrated in FIG. 8 is that the fifth example further includes a vibrating pole 35 .
- the pole 35 is, for example, arranged above the template 10 .
- the pole 35 is not limited to a position above the template 10 , and may be arranged at a position where the pole 35 can be brought into contact with the liquid film 14 .
- the pole 35 is connected to the driving mechanism 23 .
- the driving mechanism 23 of the fifth example further includes a pole driving portion.
- the pole driving portion drives the pole 35 , for example, to move vertically.
- a control device 26 e instructs the pole driving portion of the driving mechanism 23 to move the pole 35 vertically (upward and downward).
- the driving mechanism 23 receiving the command moves the pole 35 downward.
- the pole 35 comes in contact with the liquid film 14 .
- the internal pressure of the liquid film 14 in a state of supercooling is changed.
- the liquid film 14 in a state of supercooling is then solidified. Thereafter, the pole 35 is raised.
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 e according to the fifth example as illustrated in FIG. 12 , for example.
- FIG. 13 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a sixth example.
- the cross-section illustrated in FIG. 13 corresponds to the cross-section illustrated in FIG. 8 .
- the cleaning device 20 f according to a sixth example is an example in which the internal pressure of the liquid film 14 can be varied by the following feature.
- the cleaning device 20 f according to the sixth example has substantially the same structure as the first example illustrated in FIG. 8 .
- the chamber 40 omitted in FIGS. 8 to 12 is illustrated in FIG. 13 .
- the cleaning device 20 f according to the sixth example is accommodated in the chamber 40 .
- a gas supplying port 41 , an exhaust port 42 , and a loading and unloading port 43 are provided in the chamber 40 .
- the template 10 is loaded inside the chamber 40 and is unloaded from the chamber 40 through the loading and unloading port 43 .
- the loading and unloading port 43 is opened and closed by a gate valve 44 .
- the gas supplying port 41 is connected to a gas supplying mechanism 45 .
- the exhaust port 42 is connected to an exhaust mechanism 46 .
- the gas supplying mechanism 45 supplies the gas into the chamber 40 through the gas supplying port 41 .
- An example of the gas is air. Inert gas such as nitrogen gas may be supplied in addition to the air.
- the exhaust mechanism 46 exhausts the inside of the chamber 40 through the exhaust port 42 .
- a control device 26 f controls the gas supplying mechanism 45 and the exhaust mechanism 46 .
- the gas supplying mechanism 45 changes a flow rate of the gas to be supplied based on the command from the control device 26 f .
- the exhaust mechanism 46 varies exhaust force based on the command from the control device 26 f . Therefore, the pressure in the chamber 40 is changed.
- the pressure in the chamber 40 may be any one of pressure rising and pressure decreasing.
- the internal pressure of the liquid film 14 in a state of supercooling is changed.
- the liquid film 14 in a state of supercooling is then solidified.
- the method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 f according to the sixth example as illustrated in FIG. 13 , for example.
- the cleaning device of the substrate which is capable of obtaining a substrate with a high degree of cleanliness of a patterned surface.
- the embodiment exemplifies cleaning of the template 10 to be used for imprint lithography, for example, nanoimprint lithography.
- the embodiment can also be applied to cleaning of the substrate in the production of a flat panel display, the production of a solar panel, and the production of a semiconductor device, for example.
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.
Description
- This application is a continuation of U.S. Pat. Application No. 16/904,058, filed on Jun. 17, 2020, which is a division of U.S. Pat. Application No. 15/448,549, filed on Mar. 2, 2017, now abandoned, which is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-156815, filed on Aug. 9, 2016, the entire contents of each of which are incorporated herein by reference.
- Embodiments described herein relate generally to a method for cleaning a substrate and a substrate cleaning device.
- Miniaturization of a semiconductor device is constantly progressing. Imprint lithography is a lithography technique for miniaturizing a semiconductor device. In imprint lithography, an imprint lithography template (hereinafter, referred to as a template) is used as a transfer a medium of an original pattern. The template is a substrate, for example, a glass substrate. The template is placed into contact with a resist layer formed on a semiconductor wafer or the like. The original pattern that is provided on a patterned surface of the template is transferred to the resist layer by the template. Since the template serves as the transfer medium, the patterned surface is required to be maintained at a high degree of cleanliness with very little foreign matter such as particles.
-
FIG. 1 is a flow chart illustrating an example of a method for cleaning a substrate according to a first embodiment. -
FIG. 2 is a schematic cross-sectional view illustrating an example of a template. -
FIGS. 3A to 3F are schematic cross-sectional views illustrating an example of the method for cleaning a substrate according to the first embodiment. -
FIG. 4 is a diagram schematically illustrating a relationship between a time and a temperature of a liquid film. -
FIG. 5 is a flow chart illustrating an example of Step ST3. -
FIG. 6 is a diagram schematically illustrating a relationship between the time and the temperature of a liquid film in a reference example. -
FIG. 7 is a diagram schematically illustrating a relationship between the time and the temperature of a liquid film in an embodiment. -
FIG. 8 is a schematic cross-sectional view schematically illustrating a cleaning device of a substrate according to a first example. -
FIG. 9 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a second example. -
FIG. 10 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a third example. -
FIG. 11 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fourth example. -
FIG. 12 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fifth example. -
FIG. 13 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a sixth example. - Embodiments provide a method for cleaning a substrate and a cleaning device which are capable of obtaining a substrate with a high degree of cleanliness of a patterned surface thereof. In general, according to one embodiment, a method for cleaning a substrate includes supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.
- Hereinafter, embodiments will be described with reference to the drawings. In the drawings, the same elements are indicated by the same reference numerals. In the embodiments, cleaning of templates used in imprint lithography, for example, nanoimprint lithography will be used as an example.
-
FIG. 1 is a flow chart illustrating an example of a method for cleaning a substrate according to a first embodiment.FIG. 2 is a schematic cross-sectional view illustrating an example of a template.FIGS. 3A to 3F are schematic cross-sectional views illustrating an example of the method for cleaning a substrate according to the first exemplary embodiment. - A substrate to be processed is carried into a processing chamber of the cleaning device. As illustrated in
FIG. 2 , an example of the substrate to be processed is, for example, atemplate 10 to be used for nanoimprint lithography. - The
template 10 includes, for example, aquartz substrate 1. A convex shaped mesa 2 (consisting of protrusions and depressions) is provided on apatterned surface 1 a of thequartz substrate 1. A patternedregion 3 is provided in the mesa 2. Thetemplate 10 is an “original pattern” of a lithography process in a manufacturing process of a semiconductor device. In the lithography process, thepatterned region 3 of thetemplate 10 is pressed against, for example, a resist layer on a semiconductor wafer. Therefore, a pattern corresponding to the pattern provided on thepatterned region 3 is transferred to the resist layer, for example. The pattern provided on thepatterned region 3 corresponds to a wiring pattern or an open hole pattern of the semiconductor device. In the embodiment, for example, a line and space (L/S) pattern is formed as a pattern on thepatterned region 3. - An example of the L/S pattern is a pattern with a half pitch of about 20 nm and a depth of about 40 nm. For example, about 20 small particles, having a size of about 15 nm or less, may be present on such a
patterned surface 1 a of thetemplate 10. It is difficult to remove the small particles only by cleaning with an alkaline cleaning liquid and an acidic cleaning liquid. In the embodiment, the following cleaning methods are performed subsequent to cleaning using the alkaline cleaning liquid and the acidic cleaning liquid, for example. - As illustrated in Step ST1 in
FIG. 1 , andFIG. 3A , thetemplate 10 is mounted on astage 11 provided in a chamber (not illustrated) of the cleaning device. A plurality oflift pins 12 are provided on amounting surface 11 a of thestage 11. Thelift pins 12 move in a vertical direction with respect to themounting surface 11 a. For example, thetemplate 10 is supported on themounting surface 11 a by thelift pins 12. - As illustrated in Step ST2 in
FIG. 1 , andFIG. 3B , a liquid (to be solidified) 13 is supplied onto the template 10 (substrate to be processed) 10 as thetemplate 10 is rotated. Therefore, for example, aliquid film 14 is formed on the patternedsurface 1 a on thetemplate 10. An example of the liquid 13 is deionized water (DIW). As the liquid 13, an alkaline liquid, an organic solvent, an aqueous solution containing a surfactant, or the like can be used in addition to the DIW. - Before Step ST2, the
patterned surface 1 a may be hydrophilized, for example. When hydrophilizing the patternedsurface 1 a, it becomes easier to form theliquid film 14 on the patternedsurface 1 a as compared with a case without hydrophilizing the patternedsurface 1 a. An example of a hydrophilization processing is a process of treating thepatterned surface 1 a with UV light. - Step ST2 may be performed in a state where the template (substrate to be processed) 10 is cooled. For example, the
template 10 may be previously cooled. The liquid 13 is supplied onto the previously cooledtemplate 10. By previously cooling thetemplate 10 in this manner, it is possible to obtain an advantage where, for example, it is possible to shorten a time required for the next Step ST3. - As illustrated in Step ST3 in
FIG. 1 , andFIG. 3C , a coolinggas 15 is discharged to the back surface of thetemplate 10 to cool theliquid film 14, and theliquid 3 is solidified. An example of the coolinggas 15 is a nitrogen (N2) gas. Cooling of theliquid film 14 may be a so-called “refrigerator system” of maintaining the inside the chamber at a low temperature in addition to discharging of the coolinggas 15. -
FIG. 4 is a diagram schematically illustrating a relationship between the time and the temperature of theliquid film 14.FIG. 5 is a flow chart illustrating an example of Step ST3. - As illustrated in
FIG. 4 , the liquid to be solidified is, for example, the DIW. A freezing point of the DIW under “1 atmosphere” is “0° C.”. Even if the temperature under the “1 atmosphere” is lower than 0° C., the DIW can be maintained in a liquid state, a so-called “supercooled state”. In the embodiment, when the liquid to be solidified is solidified, the liquid film 4 is cooled to a temperature lower than the freezing point of the liquid to be solidified. Therefore, as illustrated in Step ST31 inFIG. 5 , the liquid film (liquid 13 to be solidified) 14 is cooled in a state of supercooling. - As illustrated in
FIG. 4 , when cooling of theliquid film 14 is started, the temperature of theliquid film 14 drops. Finally, the temperature of theliquid film 14 becomes lower than “0° C. (freezing point)”. Theliquid film 14 is then in a state of supercooling. - In the embodiment, a “set temperature” is set to a temperature zone in which the
liquid film 14 is supercooled. The “set temperature” is a temperature at which the supercooledliquid film 14 is solidified. An example of the range of the “set temperature” is equal to or higher than -40° C. and lower than 0° C. under a pressure of “1 atmosphere”. In the embodiment, in order to obtain the temperature of theliquid film 14, for example, the temperature of the liquid film (liquid 13 to be solidified) 14 is measured as illustrated in Step ST32 inFIG. 5 . The temperature of theliquid film 14 is measured using a non-contact infrared thermometer, for example. As the thermometer, a thermocouple, a resistance thermometer, or the like can be used in addition to the non-contact infrared thermometer. - Next, as illustrated in Step ST33, it is determined whether the temperature of the
liquid film 14 reaches the set temperature. In a case where the temperature does not reach the set temperature (NO), the cooling is continued. In a case where the temperature reaches the set temperature (YES), as illustrated in Step ST34, an internal pressure of the liquid film (liquid to be solidified) 14 is varied. - When the internal pressure of the
liquid film 14 is varied in a state where theliquid film 14 is supercooled, as illustrated inFIG. 4 , a phase transition (solidification) occurs in theliquid film 14. A phase of theliquid film 14 is changed from the liquid to the solid. At this time, the temperature of theliquid film 14 returns to the freezing point. Thereafter, the temperature of the solidifiedliquid film 14 becomes lower than the freezing point again. - In this manner, in the present embodiment, the internal pressure of the
liquid film 14 in a state of supercooling is varied and theliquid film 14 is solidified. - The internal pressure of the
liquid film 14, for example, can be varied by the following feature. - More specifically, the internal pressure of the
liquid film 14 can be varied by the following features. - (1) Changing a rotational speed of the
template 10 - (2) Dropping a liquid onto the
liquid film 14 - (3) Applying an acoustic wave to the
liquid film 14 - (4) Vibrating the
template 10 - (5) Vibrating the
liquid film 14 - (6) Changing the pressure inside the chamber that stores the
template 10 - In a case of (1), the change of the rotational speed of the
template 10 may be acceleration or deceleration. When accelerating, the rotational speed of thetemplate 10 is set within a range in which theliquid film 14 on thetemplate 10 is not lost by a centrifugal force. - In a case of (2), an example of the liquid is the DIW. Fine beads may be contained in the liquid. An example of the fine beads is a polystyrene latex (PSL) bead.
- (3) In a case of (3), the acoustic wave may be an ultrasound wave.
- (4) An example of (4) is a vertical movement of the lift pins 12. The lift pins 12 moves vertically in a state where the
template 10 is supported by the lift pins 12. Therefore, thetemplate 10 is vibrated. In addition to this, for example, thetemplate 10 may be vibrated by causing a pole or vibrating member to make contact with thetemplate 10. - An example of (5) is to cause a pole or vibrating member to contact the supercooled
state liquid film 14. The nozzle which is provided in the cleaning device, for example, a DIW supplying nozzle or the like may be in contact with theliquid film 14. - In a case of (6), the change in pressure in the chamber may be pressure rising or pressure decreasing.
- As illustrated in Step ST4 in
FIG. 1 , andFIG. 3D , a meltingliquid 16 is supplied to the solidifiedfilm 14 a and the solidified body of the liquid to be solidified is melted in a state where thetemplate 10 is rotated. An example of the meltingliquid 16 is DIW. The meltingliquid 16 may be any fluid. The fluid may be a gas. The fluid may be temperature-regulated. The fluid is not only supplied to the solidifiedfilm 14 a but also may be in contact with the solidifiedfilm 14 a. The solidifiedfilm 14 a may also be naturally thawed without using themelting liquid 16. - As illustrated in Step ST5 in
FIG. 1 , andFIG. 3E , a rinsingliquid 17 is supplied to thetemplate 10 and the template (substrate to be processed) 10 is rinsed in a state where thetemplate 10 is rotated. An example of the rinsingliquid 17 is DIW. The rinsingliquid 17 and the meltedliquid film 14 are removed from the patternedsurface 1 a of thetemplate 10 by increasing the rotational speed of thetemplate 10, for example. - As illustrated in Step ST6 in
FIG. 1 , andFIG. 3F , for example, the template (substrate to be processed) 10 is dried in a state where thetemplate 10 is rotated. After drying is ended, thetemplate 10 is transported from inside the processing chamber of the cleaning device. Therefore, an example of the method for cleaning a substrate according to the first embodiment is provided. -
FIG. 6 is a diagram schematically illustrating a relationship between the time and the temperature of aliquid film 14 in a reference example.FIG. 7 is a diagram schematically illustrating a relationship between the time and the temperature of aliquid film 14 in an embodiment. - The reference example is a case where the
liquid film 14 is solidified without being in a supercooled state. - In the reference example illustrated in
FIG. 6 , theliquid film 14 solidifies when the temperature reaches the freezing point (0° C.). In the reference example, the number particles having a size of about 15 nm or less (hereinafter, referred to as small particles) is about 20 particles before cleaning. After cleaning, the number of the small particles is decreased to about 19 particles. The removal efficiency of the reference example is about 5%. - In the embodiment illustrated in
FIG. 7 , when the temperature of theliquid film 14 reaches a set temperature B lower than the freezing point, the internal pressure of theliquid film 14 is varied. After the internal pressure is varied, theliquid film 14 is solidified. In the embodiment, the number of the small particles is about 20 particles before cleaning. After cleaning, the number of the small particles is decreased to about 1 to 3 particles. A set temperature “A” illustrated inFIG. 7 is the set temperature illustrated inFIG. 4 . The set temperature “A” is lower than the set temperature “B”. - At the set temperature “A”, the number of the small particles is decreased from about 20 particles to about 3 particles. The removal efficiency is about 85%.
- At the set temperature “B”, the number of the small particles is decreased from about 20 particles to about 1 particle. The removal efficiency is about 95%.
- There is a difference between the removal efficiency of the set temperature “A” and the removal efficiency of the set temperature “B”. However, since the number of the small particles is small, the difference is within a tolerance. Although the removal efficiency of the reference example is less than 10%, the removal efficiencies of the embodiment of both the set temperature “A” and the set temperature “B” exceed 80%.
- According to the method for cleaning a substrate according to the first embodiment, it is possible to provide the method for cleaning a substrate that is capable of obtaining a substrate with a high degree of cleanliness of the patterned surface.
- A second embodiment is an example of a cleaning device that is capable of executing the method for cleaning a substrate according to the first embodiment. Hereinafter, a first example to a sixth example of the cleaning device will be described. Cleaning Device: First Example
-
FIG. 8 is a schematic cross-sectional view schematically illustrating a cleaning device of a substrate according to a first example. - The
cleaning device 20 a according to a first example is an example in which the internal pressure of theliquid film 14 can be varied by the following feature. - As illustrated in
FIG. 8 , thecleaning device 20 a according to the first example includes a cleaningcup 21, a liquid supplyingmechanism 22, adriving mechanism 23, a coolinggas supplying mechanism 24, athermometer 25, and acontrol device 26 a. A shape of the cleaningcup 21 is, for example, cylindrical. Thestage 11 is accommodated in thecylindrical cleaning cup 21. - A
liquid supplying nozzle 30 is arranged above thetemplate 10. Theliquid supplying nozzle 30 is connected to the liquid supplyingmechanism 22. The liquid supplyingmechanism 22 supplies the liquid to be solidified onto the patternedsurface 1 a of thetemplate 10 through theliquid supplying nozzle 30. - The lift pins 12 are provided inside the
stage 11. Thestage 11 is supported by ashaft 31. The lift pins 12 and theshaft 31 are connected to thedriving mechanism 23. Thedriving mechanism 23 includes a lift pin driving portion that drives the lift pins 12 and a shaft driving portion that drives theshaft 31. InFIG. 8 , details of the lift pin driving portion and the details of the shaft driving portion will be omitted. The lift pin driving portion and the shaft driving portion may have a well-known structure, for example. - The lift pin driving portion moves the lift pins 12 vertically in a vertical direction with respect to the mounting
surface 11 a. Therefore, thetemplate 10 is moved vertically with respect to the mountingsurface 11 a. The shaft driving portion rotates theshaft 31. Therefore, thetemplate 10 is rotated in a horizontal direction with respect to the mountingsurface 11 a. - A cooling
gas supplying pipe 32 is provided in theshaft 31, for example. The coolinggas supplying pipe 32 is connected to the coolinggas supplying mechanism 24. The coolinggas supplying mechanism 24 supplies the cooling gas, for example, to the rear surface of thetemplate 10 through the coolinggas supplying pipe 32. - The
thermometer 25 is arranged above thetemplate 10. Thethermometer 25 measures the temperature of theliquid film 14 formed on thetemplate 10. An example of thethermometer 25 is a non-contact infrared thermometer. As thethermometer 25, a thermocouple, a resistance thermometer, or the like may be used in addition to the non-contact infrared thermometer. - The
control device 26 a controls the liquid supplyingmechanism 22, thedriving mechanism 23, and the coolinggas supplying mechanism 24. Thecontrol device 26 a executes the cleaning method described in the first embodiment based on the temperature of theliquid film 14 measured by thethermometer 25. - If the temperature of the
liquid film 14 reaches the “set temperature” illustrated inFIG. 4 , for example, thecontrol device 26 a controls thedriving mechanism 23 to change the rotational speed of thetemplate 10. Therefore, theliquid film 14 in a state of supercooling is solidified. The change of the rotation speed may be acceleration or deceleration. - The method for cleaning a substrate according to the first embodiment can be executed by the
cleaning device 20 a according to the first example as illustrated inFIG. 8 , for example. -
FIG. 9 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a second example. The cross-section illustrated inFIG. 9 corresponds to the cross-section illustrated inFIG. 8 . - The
cleaning device 20 b according to a second example is an example in which the internal pressure of theliquid film 14 can be varied by the following feature. - As illustrated in
FIG. 9 , a difference between the cleaningdevice 20 b according to the second example and the first example illustrated inFIG. 8 is that the second example further includes a second liquid supplying nozzle 33. - Similarly to the
liquid supplying nozzle 30, the second liquid supplying nozzle 33 is arranged above thetemplate 10. Theliquid supplying nozzle 30 is connected to the liquid supplyingmechanism 22. The liquid supplyingmechanism 22 of the second example further includes a portion where a liquid for applying a stimulus to the liquid film 14 (hereinafter, referred to as a dropping liquid) is supplied in addition to the portion where the liquid to be solidified is supplied. The liquid supplyingmechanism 22 of the second example supplies the dropping liquid onto the patternedsurface 1 a of thetemplate 10 through the second liquid supplying nozzle 33. - When the temperature of the
liquid film 14 reaches the “set temperature”, acontrol device 26 b controls the liquid supplyingmechanism 22 to drop the dropping liquid onto theliquid film 14. Therefore, theliquid film 14 in a state of supercooling is solidified. Fine beads, for example, PSL beads may be contained in the dripping liquid. - As the dripping liquid, the same liquid as the liquid to be solidified can be used. In this case, the second liquid supplying nozzle 33 can be omitted. When the temperature of the
liquid film 14 reaches the “set temperature”, thecontrol device 26 b may drop the liquid to be solidified onto theliquid film 14 again by controlling the liquid supplyingmechanism 22. - The method for cleaning a substrate according to the first embodiment can be executed by the
cleaning device 20 b according to the second example as illustrated inFIG. 9 , for example. -
FIG. 10 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a third example. The cross-section illustrated inFIG. 10 corresponds to the cross-section illustrated inFIG. 8 . - The
cleaning device 20 c according to a third example is an example in which the internal pressure of theliquid film 14 can be varied by the following feature. - As illustrated in
FIG. 10 , a difference between the cleaningdevice 20 c according to the third example and the first example illustrated inFIG. 8 is that the third example further includes an ultrasoundwave generating device 34. - The ultrasound
wave generating device 34 is arranged above thetemplate 10, for example. The ultrasoundwave generating device 34 is not limited to above thetemplate 10, and may be arranged at a position where the acoustic wave can be applied to theliquid film 14. The ultrasoundwave generating device 34 is connected to a control device 26 c. - When the temperature of the
liquid film 14 reaches the “set temperature”, the control device 26 c instructs the ultrasoundwave generating device 34 to generate the acoustic wave. The ultrasoundwave generating device 34 receiving the command generates the acoustic wave. The generated acoustic wave varies the internal pressure of theliquid film 14. Theliquid film 14 in a state of supercooling is solidified by applying the acoustic wave thereto. The acoustic wave may be an ultrasonic wave or a low frequency. The range of the acoustic wave is, for example, a frequency of 20 Hz or more and less than 20 kHz, a frequency of the ultrasonic wave is more than 20 kHz, and a frequency of the low frequency is less than 20 Hz. - The method for cleaning a substrate according to the first embodiment can be executed by the
cleaning device 20 c according to the third example as illustrated inFIG. 10 , for example. -
FIG. 11 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fourth example. The cross-section illustrated inFIG. 11 corresponds to the cross-section illustrated inFIG. 8 . - The
cleaning device 20 d according to a fourth example is an example in which the internal pressure of theliquid film 14 can be varied by the following feature. - As illustrated in
FIG. 11 , thecleaning device 20 d according to the fourth example has substantially the same structure as the first example illustrated inFIG. 8 . The difference is the control method of a control device 26 d. - When the temperature of the
liquid film 14 reaches the “set temperature”, the control device 26 d instructs the lift pin driving portion of thedriving mechanism 23 to move the lift pins 12, vertically. Thedriving mechanism 23 receiving the command moves the lift pins 12 vertically. By moving the lift pins 12 vertically, thetemplate 10 is vibrated. By vibrating thetemplate 10, the internal pressure of theliquid film 14 in a state of supercooling is changed. Theliquid film 14 in a state of supercooling is solidified. - The method for cleaning a substrate according to the first embodiment can be executed by the
cleaning device 20 d according to the fourth example as illustrated inFIG. 11 , for example. -
FIG. 12 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a fifth example. The cross-section illustrated inFIG. 12 corresponds to the cross-section illustrated inFIG. 8 . - The
cleaning device 20 e according to a fifth example is an example in which the internal pressure of theliquid film 14 can be varied by the following feature. - As illustrated in
FIG. 12 , a difference between the cleaningdevice 20 e according to the fifth example and the first example illustrated inFIG. 8 is that the fifth example further includes a vibratingpole 35. - The
pole 35 is, for example, arranged above thetemplate 10. Thepole 35 is not limited to a position above thetemplate 10, and may be arranged at a position where thepole 35 can be brought into contact with theliquid film 14. Thepole 35 is connected to thedriving mechanism 23. - The
driving mechanism 23 of the fifth example further includes a pole driving portion. The pole driving portion drives thepole 35, for example, to move vertically. - When the temperature of the
liquid film 14 reaches the “set temperature”, acontrol device 26 e instructs the pole driving portion of thedriving mechanism 23 to move thepole 35 vertically (upward and downward). Thedriving mechanism 23 receiving the command moves thepole 35 downward. By moving down thepole 35 downward, thepole 35 comes in contact with theliquid film 14. By contacting with thepole 35, the internal pressure of theliquid film 14 in a state of supercooling is changed. Theliquid film 14 in a state of supercooling is then solidified. Thereafter, thepole 35 is raised. - The method for cleaning a substrate according to the first embodiment can be executed by the
cleaning device 20 e according to the fifth example as illustrated inFIG. 12 , for example. -
FIG. 13 is a schematic cross-sectional view schematically illustrating the cleaning device of the substrate according to a sixth example. The cross-section illustrated inFIG. 13 corresponds to the cross-section illustrated inFIG. 8 . - The cleaning device 20 f according to a sixth example is an example in which the internal pressure of the
liquid film 14 can be varied by the following feature. - As illustrated in
FIG. 13 , the cleaning device 20 f according to the sixth example has substantially the same structure as the first example illustrated inFIG. 8 . Thechamber 40 omitted inFIGS. 8 to 12 is illustrated inFIG. 13 . The cleaning device 20 f according to the sixth example is accommodated in thechamber 40. - A
gas supplying port 41, an exhaust port 42, and a loading and unloadingport 43 are provided in thechamber 40. Thetemplate 10 is loaded inside thechamber 40 and is unloaded from thechamber 40 through the loading and unloadingport 43. The loading and unloadingport 43 is opened and closed by agate valve 44. - The
gas supplying port 41 is connected to agas supplying mechanism 45. The exhaust port 42 is connected to anexhaust mechanism 46. Thegas supplying mechanism 45 supplies the gas into thechamber 40 through thegas supplying port 41. An example of the gas is air. Inert gas such as nitrogen gas may be supplied in addition to the air. Theexhaust mechanism 46 exhausts the inside of thechamber 40 through the exhaust port 42. - When the temperature of the
liquid film 14 reaches the “set temperature”, acontrol device 26 f controls thegas supplying mechanism 45 and theexhaust mechanism 46. Thegas supplying mechanism 45 changes a flow rate of the gas to be supplied based on the command from thecontrol device 26 f. Theexhaust mechanism 46 varies exhaust force based on the command from thecontrol device 26 f. Therefore, the pressure in thechamber 40 is changed. The pressure in thechamber 40 may be any one of pressure rising and pressure decreasing. - By changing the pressure inside the
chamber 40, the internal pressure of theliquid film 14 in a state of supercooling is changed. Theliquid film 14 in a state of supercooling is then solidified. - The method for cleaning a substrate according to the first embodiment can be executed by the cleaning device 20 f according to the sixth example as illustrated in
FIG. 13 , for example. - According to the second embodiment, it is possible to provide the cleaning device of the substrate which is capable of obtaining a substrate with a high degree of cleanliness of a patterned surface.
- For example, the embodiment exemplifies cleaning of the
template 10 to be used for imprint lithography, for example, nanoimprint lithography. However, the embodiment can also be applied to cleaning of the substrate in the production of a flat panel display, the production of a solar panel, and the production of a semiconductor device, for example. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (13)
1. A method for cleaning a substrate, comprising:
dispensing a liquid onto the substrate mounted on a stage;
cooling the liquid on the substrate to a supercooled state;
varying an internal pressure of the liquid when a temperature of the liquid reaches a setpoint temperature to form a solidified body on the substrate; and
melting the solidified body on the substrate.
2. The method according to claim 1 , wherein the substrate is a nanoimprint template.
3. The method according to claim 1 , wherein the rotatable stage is disposed in a cleaning cup.
4. The method according to claim 1 , further comprising:
measuring the temperature of the liquid on the substrate during the cooling of the liquid on the substrate.
5. The method according to claim 1 , wherein varying the internal pressure of the liquid includes dispensing an additional liquid onto the liquid on the substrate.
6. The method according to claim 1 , wherein varying the internal pressure of the liquid includes applying an acoustic wave to the liquid on the substrate.
7. The method according to claim 1 , wherein varying the internal pressure of the liquid includes vibrating the substrate.
8. The method according to claim 1 , wherein varying the internal pressure of the liquid includes vibrating the liquid on the substrate.
9. The method according to claim 1 , wherein
the stage is inside a chamber, and
varying the internal pressure of the liquid includes changing the pressure inside the chamber.
10. The method according to claim 1 , further comprising:
rinsing the liquid from the substrate after melting of the solidified body; and
drying the substrate after the rinsing of the liquid from the substrate.
11. The method according to claim 1 , further comprising:
cooling the solidified body on the substrate to a temperature below a freezing point of the liquid.
12. The method according to claim 1 , wherein the liquid is deionized water.
13. The method according to claim 1 , wherein the cooling of the liquid on the substrate is performed by supplying cooling gas from a backside direction of the substrate through a pipe in a shaft for rotating the stage.
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US20200035484A1 (en) * | 2018-07-30 | 2020-01-30 | Lam Research Corporation | System and method for chemical and heated wetting of substrates prior to metal plating |
KR102500591B1 (en) * | 2020-02-25 | 2023-02-15 | 시바우라 메카트로닉스 가부시끼가이샤 | Substrate processing device |
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DE2727426B2 (en) | 1977-06-18 | 1981-04-30 | Heidelberger Druckmaschinen Ag, 6900 Heidelberg | Device for controlling the ink supply of a sheet-fed offset printing machine |
JPS60143883A (en) * | 1983-12-28 | 1985-07-30 | 富士通株式会社 | Washing method |
JPH0756323A (en) | 1993-08-11 | 1995-03-03 | Nikon Corp | Substrate cleaning device |
US7479205B2 (en) | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
US8210120B2 (en) | 2003-01-10 | 2012-07-03 | Microsemi Corporation | Systems and methods for building tamper resistant coatings |
JP4767138B2 (en) | 2006-09-13 | 2011-09-07 | 大日本スクリーン製造株式会社 | Substrate processing apparatus, liquid film freezing method, and substrate processing method |
WO2008070295A2 (en) | 2006-10-17 | 2008-06-12 | Akrion Technologies, Inc. | System and method for the sonic-assisted cleaning of substrates utilizing a sonic-treated liquid |
JP5312923B2 (en) | 2008-01-31 | 2013-10-09 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
JP5244566B2 (en) | 2008-12-02 | 2013-07-24 | 株式会社東芝 | Template cleaning method, cleaning system, and cleaning apparatus |
JP5497599B2 (en) * | 2010-09-16 | 2014-05-21 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
TWI480937B (en) | 2011-01-06 | 2015-04-11 | Screen Holdings Co Ltd | Substrate processing method and substrate processing apparatus |
JP5801678B2 (en) * | 2011-01-28 | 2015-10-28 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
US8654325B2 (en) | 2011-07-05 | 2014-02-18 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and computer-readable storage medium having program for executing the substrate processing method stored therein |
JP5865073B2 (en) * | 2011-12-28 | 2016-02-17 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
JP6738235B2 (en) * | 2016-08-09 | 2020-08-12 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
-
2016
- 2016-08-09 JP JP2016156815A patent/JP6596396B2/en active Active
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2017
- 2017-03-02 US US15/448,549 patent/US20180047565A1/en not_active Abandoned
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2020
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US11651953B2 (en) | 2023-05-16 |
JP2018026438A (en) | 2018-02-15 |
JP6596396B2 (en) | 2019-10-23 |
US20200321212A1 (en) | 2020-10-08 |
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