US20230123870A1 - Wafer placement table - Google Patents
Wafer placement table Download PDFInfo
- Publication number
- US20230123870A1 US20230123870A1 US17/938,388 US202217938388A US2023123870A1 US 20230123870 A1 US20230123870 A1 US 20230123870A1 US 202217938388 A US202217938388 A US 202217938388A US 2023123870 A1 US2023123870 A1 US 2023123870A1
- Authority
- US
- United States
- Prior art keywords
- stepped
- socket
- wafer placement
- placement table
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Definitions
- the present invention relates to a wafer placement table.
- the present invention has been accomplished with intent to solve the above-mentioned problem, and a main object of the present invention is to reduce the influence on the heating uniformity of the wafer.
- a wafer placement table includes a ceramic base having a wafer placement surface in an upper surface and including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding a lower surface of the ceramic base and an upper surface of the cooling base, a stepped hole penetrating the bonding layer and the cooling base in an up-down direction and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion, and a connection terminal bonded at an upper end to the electrode and inserted through the stepped insulating pipe.
- the stepped hole includes the upper hole portion with the small diameter, and the upper hole portion passes through the region where the coolant flow path is formed.
- the large-diameter lower hole portion of the stepped hole is positioned under the coolant flow path. Therefore, the heat removal performance of the coolant flow path is not impaired to a large extent, and the influence upon heating uniformity of the wafer can be reduced.
- a length of the upper hole portion is preferably longer than that of the lower hole portion. As the length of the upper hole portion with the small diameter increases, the influence upon the heating uniformity can be further reduced.
- the wafer placement table according to the present invention may include a socket that is arranged inside the lower pipe portion of the stepped insulating pipe and that includes an elastic support elastically supporting an outer peripheral surface of the connection terminal without abutting against a lower end surface of the connection terminal. Since the socket is arranged inside the large-diameter lower pipe portion of the stepped insulating pipe, a diameter of the socket can be set to be greater than a diameter of the upper pipe portion and a diameter of the connection terminal. As a result, a contact surface between the socket and an external contact member is increased, and the occurrence of a connection failure between them can be suppressed.
- the socket does not press the connection terminal because the socket does not abut against the lower end surface of the connection terminal.
- the socket elastically supports an outer peripheral surface of the connection terminal without abutting against the lower end surface of the connection terminal. Therefore, the load generated when the external contact member is brought into contact with the socket and the load generated when the connection terminal is connected to the socket are not applied to a location at which the connection terminal and the electrode are bonded to each other, and the occurrence of a defect at the bonded location can be suppressed.
- the socket may be in contact with the pipe stepped portion.
- the elastic support may include a plurality of leaf springs.
- the elastic support can be formed in a relatively simple structure.
- the elastic support may include the leaf springs vertically arranged at intervals in a circumferential direction.
- the elastic support may include a plurality of plate members vertically arranged at intervals in the circumferential direction and an elastic member tightening the plate members from an outer side.
- the elastic support can be formed in a relatively simple structure.
- a diameter of the connection terminal may be smaller than or equal to a half of a diameter of the lower surface of the socket.
- the diameter of the connection terminal can be made sufficiently smaller than that of the lower surface (contact surface) of the socket.
- the lower surface of the socket may have a concave shape gradually recessed toward a center from an outer periphery.
- the socket may include a plug insertion opening into which a plug is insertable.
- the plug can be used as the external contact member.
- FIG. 1 is a vertical sectional view of a wafer placement table 10 installed in a chamber 100 .
- FIG. 2 is a plan view of the wafer placement table 10 .
- FIG. 3 is a partial enlarged view of FIG. 1 .
- FIG. 4 is a perspective view of a louver 86 .
- FIGS. 5 A to 5 C illustrate manufacturing steps of the wafer placement table 10 .
- FIGS. 6 A to 6 D illustrate manufacturing steps of the wafer placement table 10 .
- FIG. 7 is a sectional view of the structure of a socket 185 and its surroundings.
- FIG. 8 is a perspective view of the socket 185 .
- FIG. 9 is a sectional view illustrating another example of the socket 85 .
- FIG. 1 is a vertical sectional view of a wafer placement table 10 installed in a chamber 100 (namely, a sectional view appearing when the wafer placement table 10 is cut along a plane including a center axis)
- FIG. 2 is a plan view of the wafer placement table 10
- FIG. 3 is a partial enlarged view of FIG. 1 (namely, a sectional view of the structure of a socket 85 and its surroundings)
- FIG. 4 is a perspective view of a louver 86 .
- “A to B” expressing a numerical range is used as indicating that numerical values A and B denoted before and after “to” are included respectively as a lower limit value and an upper limit value of the range.
- the wafer placement table 10 is used to perform CVD or etching on a wafer W with plasma and is fixed to a mounting plate 101 that is disposed inside a chamber 100 for a semiconductor process.
- the wafer placement table 10 includes a ceramic base 20 , a cooling base 30 , and a metallic bonding layer 40 .
- the ceramic base 20 includes an outer peripheral portion 24 with an annular focus-ring placement surface 24 a around a central portion 22 with a circular wafer placement surface 22 a .
- focus ring is abbreviated to “FR” in some cases.
- the wafer W is placed on the wafer placement surface 22 a
- a focus ring 78 is placed on the FR placement surface 24 a .
- the ceramic base 20 is made of a ceramic material represented by alumina or aluminum nitride, for example.
- the FR placement surface 24 a is one step lower than the wafer placement surface 22 a .
- a wafer attraction electrode 25 and a central heater electrode 26 are built in the central portion 22 of the ceramic base 20 in order from a side closer to the wafer placement surface 22 a .
- Those electrodes 25 and 26 are made of a material containing W, Mo, WC, or MoC, for example.
- the wafer attraction electrode 25 is a single-pole electrostatic electrode in the form of a circular plate or mesh.
- a layer of the ceramic base 20 on an upper side than the wafer attraction electrode 25 functions as a dielectric layer.
- a wafer attraction DC power supply (not illustrated) is connected to the wafer attraction electrode 25 through both a power supply terminal (connection terminal) 62 and a power supply rod 63 .
- the power supply terminal 62 is inserted through a stepped insulating pipe 64 .
- the stepped insulating pipe 64 is inserted through a stepped hole penetrating both the cooling base 30 and the bonding layer 40 .
- An upper surface of the power supply terminal 62 is bonded to a lower surface of the wafer attraction electrode 25 .
- a socket 65 is arranged in a diameter-increased lower portion of the stepped insulating pipe 64 .
- a lower portion of the power supply terminal 62 is inserted into a louver 66 that is arranged in a bottom-equipped hole formed in an upper surface of the socket 65 , and the lower portion is electrically connected to the socket 65 .
- a lower surface of the socket 65 is in contact with an upper surface of the power supply rod 63 that is biased upward by a spring 63 a .
- the central heater electrode 26 is formed of a resistance heating element that is wired in a one-stroke pattern to extend over the whole of the wafer placement surface 22 a from one end to the other end when viewed in plan.
- a central heater power supply (not illustrated) is connected to the one end of the central heater electrode 26 through both a power supply terminal 72 and a power supply rod 73 .
- An upper surface of the power supply terminal 72 is bonded to a lower surface of the central heater electrode 26 at the one end thereof.
- the power supply terminal 72 is inserted through a stepped insulating pipe 74 .
- the stepped insulating pipe 74 is inserted through a stepped hole penetrating both the cooling base 30 and the bonding layer 40 .
- a socket 75 is arranged in a diameter-increased lower portion of the stepped insulating pipe 74 .
- a lower portion of the power supply terminal 72 is inserted into a louver 76 that is arranged in a bottom-equipped hole formed in an upper surface of the socket 75 , and the lower portion is electrically connected to the socket 75 .
- a lower surface of the socket 75 is in contact with an upper surface of the power supply rod 73 that is biased upward by a spring 73 a .
- the other end of the central heater electrode 26 is also connected to the central heater power supply through both a power supply terminal and a power supply rod as with the one end of the central heater electrode 26 .
- An FR attraction electrode 27 and an outer peripheral heater electrode 28 are built in the outer peripheral portion 24 of the ceramic base 20 in order from a side closer to the FR placement surface 24 a .
- Those electrodes 27 and 28 are made of a material containing W, Mo, WC, or MoC, for example.
- the FR attraction electrode 27 is a single-pole electrostatic electrode in the form of a circular ring-shaped plate or mesh. A layer of the ceramic base 20 on an upper side than the FR attraction electrode 27 functions as a dielectric layer.
- An FR attraction DC power supply (not illustrated) is connected to the FR attraction electrode 27 through both a power supply terminal 82 and a power supply rod 83 .
- An upper surface of the power supply terminal 82 is bonded to a lower surface of the FR attraction electrode 27 .
- the power supply terminal 82 is inserted through a stepped insulating pipe 84 .
- the stepped insulating pipe 84 is inserted through a stepped hole penetrating both the cooling base 30 and the bonding layer 40 .
- a socket 85 is arranged in a diameter-increased lower portion of the stepped insulating pipe 84 .
- a lower portion of the power supply terminal 82 is inserted into the louver 86 that is arranged in a bottom-equipped hole formed in an upper surface of the socket 85 , and the lower portion is electrically connected to the socket 85 .
- a lower surface of the socket 85 is in contact with an upper surface of the power supply rod 83 that is biased upward by a spring 83 a .
- the outer peripheral heater electrode 28 is formed of a resistance heating element that is wired in a one-stroke pattern to extend over the whole of the FR placement , surface 24 a from one end to the other end when viewed in plan.
- An outer peripheral heater power supply (not illustrated) is connected to the one end of the outer peripheral heater electrode 28 through both a power supply terminal 92 and a power supply rod 93 .
- An upper surface of the power supply terminal 92 is bonded to a lower surface of the outer peripheral heater electrode 28 at the one end thereof.
- the power supply terminal 92 is inserted through a stepped insulating pipe 94 .
- the stepped insulating pipe 94 is inserted through a stepped hole penetrating both the cooling base 30 and the bonding layer 40 .
- a socket 95 is arranged in a diameter-increased lower portion of the stepped insulating pipe 94 .
- a lower portion of the power supply terminal 92 is inserted into a louver 96 that is arranged in a bottom-equipped hole formed in an upper surface of the socket 95 , and the lower portion is electrically connected to the socket 95 .
- a lower surface of the socket 95 is in contact with an upper surface of the power supply rod 93 that is biased upward by a spring 93 a .
- the other end of the outer peripheral heater electrode 28 is also connected to the outer peripheral power supply through both a power supply terminal and a power supply rod as with the one end of the outer peripheral heater electrode 28 .
- the stepped insulating pipes 64 , 74 , 84 and 94 can be formed using a ceramic material such as alumina, for example.
- the cooling base 30 is a conductive circular plate member and includes a lower member 30 a and an upper member 30 b bonded to each other with a conductive bonding layer 30 c interposed therebetween.
- the conductive bonding layer 30 c can be made of the same material as that of the metallic bonding layer 40 (described later).
- the cooling base 30 includes a coolant flow path 31 through which a coolant can circulate.
- the coolant flow path 31 is formed in a one-stroke pattern to extend over the whole of the ceramic base 20 from one end to the other end when viewed in plan.
- the coolant flow path 31 is formed by a flow channel groove formed in a lower surface of the upper member 30 b and by the bonding layer 30 c covering the flow path groove from below.
- a coolant circulator 34 is a circulation pump with a temperature adjustment function.
- the coolant circulator 34 introduces the coolant at a temperature adjusted to a desired value to the coolant supply path 32 and, after adjusting the temperature of the coolant discharged from the coolant discharge path 33 of the coolant flow path 31 to the desired value, introduces the discharged coolant again to the coolant supply path 32 .
- the cooling base 30 is made of a conductive material containing a metal.
- the conductive material may be, for example, a composite material or a metal.
- the composite material may be a metal matrix composite material (also called a metal matrix composite (MMC)).
- MMC metal matrix composite
- the MMC may be, for example, a material containing Si, SiC and Ti, and a material made of a SiC porous body impregnated with Al and/or Si.
- the material containing Si, SiC and Ti is called SiSiCTi
- the material made of the SiC porous body impregnated with Al is called AlSiC
- the material made of the SiC porous body impregnated with Si is called SiSiC.
- the metal may be, for example, Mo.
- the cooling base 30 is connected to a radio frequency power supply 36 for generating plasma and is used as a radio frequency electrode.
- the metallic bonding layer 40 bonds a lower surface of the ceramic base 20 and an upper surface of the cooling base 30 .
- the metallic bonding layer 40 may be a layer made of, for example, a solder or a metallic brazing material.
- the metallic bonding layer 40 is formed by, for example, TCB (Thermal compression bonding).
- the TCB indicates a known method of sandwiching a metallic bonding material between two members to be bonded, and press-bonding those two members in a state in which those members are heated to a temperature lower than or equal to the solidus temperature of the metallic bonding material.
- the wafer placement table 10 includes a BS gas path 42 through which a backside gas (BS gas) is supplied to a back surface of the wafer W.
- the BS gas path 42 is constituted by a stepped hole 42 a penetrating both the cooling base 30 and the metallic bonding layer 40 in an up-down direction, and by a through-hole 42 b communicating with the stepped hole 42 a and penetrating the ceramic base 20 in the up-down direction.
- the BS gas path 42 is connected to a BS gas supply source 43 .
- the BS gas may be, for example, a heat conduction gas (e.g., a He gas).
- the stepped hole 81 is a hole being circular in cross-section and penetrating both the metallic bonding layer 40 and the cooling base 30 in the up-down direction.
- the stepped hole 81 includes an upper hole portion 81 a with a small diameter, a lower hole portion 81 b with a large diameter, and a hole stepped portion 81 c between the upper hole portion 81 a and the lower hole portion 81 b .
- the upper hole portion 81 a penetrates the metallic bonding layer 40 , the upper member 30 b of the cooling base 30 , and the conductive bonding layer 30 c and further extends up to the lower member 30 a .
- the upper hole portion 81 a passes through a region 37 of the cooling base 30 where the coolant flow path 31 is formed (namely, through a wall portion of the cooling base 30 partitioning adjacent parts of the coolant flow path 31 ) in the up-down direction.
- the lower hole portion 81 b is formed to extend from an outer peripheral position of the hole stepped portion 81 c to reach a lower surface of the lower member 30 a .
- a length of the upper hole portion 81 a is longer than that of the lower hole portion 81 b .
- the coolant flow path 31 can be formed in a sufficient height (length in the up-down direction), and the heat removal performance of the coolant flow path 31 is increased.
- the stepped insulating pipe 84 is inserted through the stepped hole 81 and is stuck to an inner surface of the stepped hole 81 with a silicone adhesive layer 88 interposed therebetween.
- An outer shape of the stepped insulating pipe 84 matches with a shape of the stepped hole 81 .
- the stepped insulating pipe 84 includes an upper pipe portion 84 a with a small diameter, a lower pipe portion 84 b with a large diameter, and a pipe stepped portion 84 c between the upper pipe portion 84 a and the lower pipe portion 84 b .
- the upper pipe portion 84 a is positioned in the upper hole portion 81 a
- the lower pipe portion 84 b is positioned in the lower hole portion 81 b .
- An outer surface of the pipe stepped portion 84 c is stuck to the hole stepped portion 81 c with the adhesive layer 88 interposed therebetween.
- a terminal hole 27 a is formed in the ceramic base 20 over a range from the lower surface of the FR attraction electrode 27 to the lower surface of the ceramic base 20 .
- the power supply terminal 82 is inserted through both the terminal hole 27 a and the upper pipe portion 84 a of the stepped insulating pipe 84 and is stuck to an inner surface of the upper pipe portion 84 a with a silicone adhesive layer 89 interposed therebetween.
- the upper surface of the power supply terminal 82 is bonded to the FR attraction electrode 27 with a metallic brazing layer 27 b interposed therebetween, and the lower portion of the power supply terminal 82 reaches the inside of the lower pipe portion 84 b of the stepped insulating pipe 84 .
- the socket 85 is a cylindrical member made of a metal (for example, Cu) and is fitted to the lower pipe portion 84 b of the stepped insulating pipe 84 .
- the socket 85 has a bottom-equipped hole 85 a formed in a central portion of its upper surface.
- An annular upper surface 85 b of the socket 85 abuts against the pipe stepped portion 84 c of the stepped insulating pipe 84 .
- a diameter ⁇ of a circular lower surface 85 c of the socket 85 substantially matches with an inner diameter of the lower pipe portion 84 b of the stepped insulating pipe 84 .
- the lower surface 85 c is a concave surface gradually recessed toward a center from an outer periphery.
- a taper angle ⁇ of the concave surface is preferably greater than or equal to 90° and smaller than 180°.
- the louver 86 made of a metal (for example, beryllium copper) is arranged in the bottom-equipped hole 85 a of the socket 85 .
- the louver 86 includes a ring portion 86 a in each of upper and lower sides and a plurality of strip members 86 b vertically arranged at intervals in a circumferential direction of the ring portion 86 a (see FIG. 4 ).
- the ring portion 86 a is in contact with an inner peripheral wall of the bottom-equipped hole 85 a of the socket 85 .
- the ring portion 86 a may have an annular shape or a C shape.
- the strip members 86 b couple the upper and lower ring portions 86 a to each other and have a shape curving toward a center axis of the louver 86 .
- the lower portion of the power supply terminal 82 is inserted into the louver 86 .
- An outer peripheral surface of the power supply terminal 82 is in contact with the strip members 86 b , and a lower end surface of the power supply terminal 82 is apart from a bottom surface of the bottom-equipped hole 85 a without abutting against the bottom surface.
- the strip members 86 b are pressed by the power supply terminal 82 outward in a radial direction to come into an elastically deformed state.
- the louver 86 elastically supports the outer peripheral surface of the power supply terminal 82 in its lower portion in such a manner that the lower end surface of the power supply terminal 82 does not abut against the bottom surface of the bottom-equipped hole 85 a of the socket 85 .
- a relationship between the diameter ⁇ of the lower surface of the socket 85 and a diameter ⁇ of the power supply terminal 82 preferably satisfies ⁇ ⁇ ⁇ /2.
- FIGS. 5 and 6 each illustrate manufacturing steps of the wafer placement table 10 .
- a ceramic sintered body 120 in the form of a circular plate becoming the ceramic base 20 is fabricated ( FIG. 5 A ).
- the ceramic sintered body 120 is fabricated by firing a ceramic powder compact with a hot press and then forming various holes by cutting.
- the wafer attraction electrode 25 , the central heater electrode 26 , the FR attraction electrode 27 , and the outer peripheral heater electrode 28 are built in the ceramic sintered body 120 .
- the various holes provide the through-hole 42 b serving as part of the BS gas path 42 and holes through which the power supply terminals 62 , 72 , 82 and 92 are inserted.
- the lower member 30 a and the upper member 30 b are fabricated ( FIG. 5 A ).
- the coolant supply path 32 , the coolant discharge path 33 , and holes serving as parts of the stepped holes 42 a , 61 , 71 , 81 and 91 are formed in the lower member 30 a by cutting.
- a flow path groove 131 becoming the coolant flow path 31 and holes serving as parts of the stepped holes 42 a , 61 , 71 , 81 and 91 are formed in the upper member 30 b by cutting.
- the lower member 30 a and the upper member 30 b are preferably made of SiSiCTi or A1SiC.
- the thermal expansion coefficient of alumina is substantially the same as that of SiSiCTi or A1SiC.
- the lower member 30 a and the upper member 30 b are preferably made of Mo. This is because the thermal expansion coefficient of A1N is substantially the same as that of Mo.
- a circular plate member made of SiSiCTi can be fabricated, by way of example, as follows. First, a powder mixture is prepared by mixing silicon carbide, metal Si, and metal Ti. Next, a compact in the form of a circular plate is fabricated from the obtained power mixture by uniaxial press-molding, and the compact is sintered under an inert atmosphere with a hot press. Thus, the circular plate member made of SiSiCTi is obtained.
- a metallic bonding material 130 c including through-holes formed at required positions is arranged between the lower member 30 a and the upper member 30 b , and a metallic bonding material 140 including through-holes formed at required positions is arranged between the upper member 30 b and the ceramic sintered body 120 ( FIG. 5 A ).
- the above-mentioned materials and members are laminated, and a laminate is obtained.
- the bonded body 110 is a body in which the ceramic sintered body 120 is bonded, with interposition of the metallic bonding layer 40 , to the upper surface of the cooling base 30 including the lower member 30 a and the upper member 30 b that are bonded to each other with the conductive bonding layer 30 c interposed therebetween.
- An opening of the flow path groove 131 in the upper member 30 b is covered with the conductive bonding layer 30 c and the lower member 30 a .
- the coolant flow path 31 is formed inside the cooling base 30 .
- the stepped holes 42 a , 61 , 71 , 81 and 91 are formed in the metallic bonding layer 40 and the cooling base 30 .
- the TCB is performed, by way of example, as follows.
- the laminate is pressed and bonded together at a temperature lower than or equal to the solidus temperature of the metallic bonding material (for example, a temperature higher than or equal to a value obtained by subtracting 20° C. from the solidus temperature and lower than or equal to the solidus temperature).
- the temperature of the laminate is returned to a room temperature.
- the metallic bonding material becomes the metallic bonding layer.
- An A1—Mg bonding material or an A1—Si—Mg bonding material can be used as the metallic bonding material in the above-mentioned process.
- the TCB is performed using the A1—Si—Mg bonding material, for example, the laminate is pressed in a state heated under a vacuum atmosphere.
- the metallic bonding material used here preferably has a thickness of about 100 ⁇ m.
- an outer peripheral portion of the ceramic sintered body 120 is cut to form a step, whereby the ceramic base 20 including the central portion 22 and the outer peripheral portion 24 is obtained ( FIG. 5 C ).
- the wafer placement table 10 is obtained by attaching necessary members to the stepped holes 61 , 71 , 81 and 91 .
- the following description is made, by way of example, in connection with the case of attaching the necessary members to the stepped hole 81 .
- necessary members are attached in a similar manner.
- the upper surface of the power supply terminal 82 is bonded through the terminal hole 27 a extending from the lower surface of the ceramic base 20 to the FR attraction electrode 27 by using a metallic brazing material, whereby the power supply terminal 82 and the FR attraction electrode 27 are bonded to each other with the metallic brazing layer 27 b interposed therebetween ( FIGS. 6 A and 6 B ).
- the power supply terminal 82 made of Mo is bonded to the FR attraction electrode 27 made of WC or Mo by using the metallic bonding material (for example, Au—Ge, Al, or Ag).
- a silicone adhesive is applied to an outer peripheral surface of the stepped insulating pipe 84 and an inner peripheral surface of the small-diameter upper pipe portion 84 a .
- the stepped insulating pipe 84 is inserted through the stepped hole 81 while the power supply terminal 82 is inserted through the stepped insulating pipe 84 .
- the adhesive is then solidified to form the adhesive layers 88 and 89 ( FIGS. 6 B and 6 C ).
- a lower end of the power supply terminal 82 is in a state projecting into the inside of the large-diameter lower pipe portion 84 b .
- the socket 85 with the louver 86 is prepared and assembled into the large-diameter lower pipe portion 84 b of the stepped insulating pipe 84 while the power supply terminal 82 is inserted into the louver 86 ( FIGS. 6 C and 6 D ).
- the socket 85 does not press the power supply terminal 82 .
- the louver 86 in the socket 85 elastically supports the outer peripheral surface of the power supply terminal 82 without abutting against the lower end surface of the power supply terminal 82 . Therefore, the load generated when the power supply terminal 82 is connected to the louver 86 in the socket 85 is not applied to the metallic brazing layer 27 b at which the power supply terminal 82 and the FR attraction electrode 27 are bonded to each other.
- the necessary members are attached to the other stepped holes 61 , 71 and 91 as well in a similar manner.
- the wafer placement table 10 is obtained.
- the wafer placement table 10 is set, as described above, on the mounting plate 101 in the chamber 100 .
- a shower head 100 a discharging a process gas toward the inside of the chamber 100 from many gas injection holes is arranged at a ceiling surface of the chamber 100 .
- the focus ring 78 is placed on the FR placement surface 24 a of the wafer placement table 10 , and the wafer W in the form of a disk is placed on the wafer placement surface 22 a .
- the focus ring 78 includes a step formed along an inner periphery of its upper end portion not to interfere with the wafer W. In this state, a DC voltage is applied to the wafer attraction electrode 25 to attract the wafer W onto the wafer placement surface 22 a , and a DC voltage is applied to the FR attraction electrode 27 to attract the focus ring 78 onto the FR placement surface 24 a .
- the BS gas (for example, a helium gas) is supplied to the back surface of the wafer W from the BS gas path 42 , and currents are supplied to the central heater electrode 26 and the outer peripheral heater electrode 28 to make control such that the wafer W is heated to a high temperature.
- the inside of the chamber 100 is held under a predetermined vacuum atmosphere (or a reduced-pressure atmosphere), and a radio frequency voltage from the radio frequency power supply 36 is applied to the cooling base 30 while the process gas is supplied from the shower head 100 a .
- plasma is generated between the cooling base 30 and the shower head 100 a .
- the wafer W is processed with the generated plasma.
- the temperature of the wafer W is adjusted as required by circulating the coolant through the coolant flow path 31 .
- the stepped hole 81 includes the upper hole portion 81 a with the small diameter, and the upper hole portion 81 a passes through the region 37 of the cooling base 30 where the coolant flow path 31 is formed (namely, through the wall portion of the cooling base 30 partitioning the adjacent parts of the coolant flow path 31 ).
- the large-diameter lower hole portion 81 b of the stepped hole 81 is positioned under the coolant flow path 31 . Accordingly, the heat removal performance of the coolant flow path 31 is not impaired to a large extent, and the influence upon heating uniformity of the wafer W can be reduced.
- the length of the upper hole portion 81 a is longer than that of the lower hole portion 81 b , the influence upon the heating uniformity can be further reduced.
- the diameter ⁇ of the lower surface of the socket 85 can be set to be greater than the diameter of the upper pipe portion 84 a and the diameter ⁇ of the power supply terminal 82 .
- a contact surface between the lower surface of the socket 85 and the power supply rod 83 serving as an external contact member is increased, and the occurrence of a connection failure between them can be suppressed.
- the socket 85 does not press the power supply terminal 82 because the socket 85 does not abut against the lower end surface of the power supply terminal 82 .
- the louver 86 in the socket 85 elastically supports the outer peripheral surface of the power supply terminal 82 without abutting against the lower end surface of the power supply terminal 82 . Therefore, the load generated when the power supply rod 83 is brought into contact with the socket 85 and the load generated when the power supply terminal 82 is connected to the socket 85 are not applied to the metallic brazing layer 27 b at which the power supply terminal 82 and the FR attraction electrode 27 are bonded to each other, and the occurrence of a defect in the metallic brazing layer 27 b can be suppressed.
- the socket 85 Because of the socket 85 being in contact with the pipe stepped portion 84 c , even if the force acting in the direction toward the FR attraction electrode 27 is applied to the socket 85 , the force is exerted on the pipe stepped portion 84 c and the hole stepped portion 81 c , and the socket 85 does not press the power supply terminal 82 .
- the strip members 86 b (leaf springs) are used as an elastic support. More specifically, the louver 86 including the strip members 86 b (leaf springs) vertically arranged at intervals in the circumferential direction is employed as the elastic support. Therefore, the elastic support can be formed in a relatively simple structure.
- the diameter ⁇ of the power supply terminal 82 is preferably set to be smaller than or equal to a half of the diameter ⁇ of the lower surface 85 c of the socket 85 (i.e., ⁇ ⁇ ⁇ /2). This condition enables the diameter of the power supply terminal 82 to be held sufficiently smaller than that of the lower surface 85 c (contact surface) of the socket 85 . As a result, a reduction in heating uniformity of the wafer W due to the presence of the power supply terminal 82 can be sufficiently suppressed.
- the lower surface 85 c of the socket 85 has a concave shape gradually recessed toward the center from the outer periphery. Accordingly, when the external power supply rod 83 is elastically contacted with the lower surface 85 c of the socket 85 by the spring 83 a , a tip end of the power supply rod 83 is less likely to deviate from the center of the lower surface 85 c of the socket 85 .
- FIG. 7 is a sectional view of the structure of the socket 185 and its surroundings
- FIG. 8 is a perspective view of the socket 185 .
- components similar to the above-described embodiment are denoted by the same reference signs, and description of those components is omitted.
- a stepped insulating pipe 184 is inserted through the stepped hole 81 and has an outer shape in match with the shape of the stepped hole 81 .
- the stepped insulating pipe 184 includes an upper pipe portion 184 a with a small diameter, a lower pipe portion 184 b with a large diameter, and a pipe stepped portion 184 c between the upper pipe portion 184 a and the lower pipe portion 184 b .
- the pipe stepped portion 184 c abuts against an upper surface 185 b of the socket 185 .
- a space 184 d in which an elastic support 185 d is to be accommodated is formed at a boundary between the upper pipe portion 184 a and the pipe stepped portion 184 c .
- the elastic support 185 d includes a plurality of plate members 185 e vertically arranged at intervals in the circumferential direction and an outer spring (elastic member) 185 f tightening the plate members 185 e from the outer side.
- the plate members 185 e are made of a metal and are members obtained by dividing a cylinder into plural parts (four here) by vertical slits, each of the members having a circular arc shape in cross-section ( FIG. 8 ).
- a lower end of each plate member 185 e is a fixed end integrated with the socket 185
- an upper end of the plate member 185 e is a free end.
- the outer spring 185 f is a metal-made spring and is preferably made of a nonmagnetic metallic material (for example, Inconel) or a metallic material that is not magnetized at high temperature.
- the diameter of a circle along which the plate members 185 e are arranged is a little smaller than that of the power supply terminal 82 . Accordingly, when the power supply terminal 82 is inserted into a space at a center of the elastic support 185 d , the plate members 185 e are pushed to expand outward in the radial direction, but the outer spring 185 f tightens the plate members 185 e and the power supply terminal 82 from the outer side. As a result, the power supply terminal 82 is elastically supported by the elastic support 185 d .
- the lower end surface of the power supply terminal 82 is apart from the upper surface 185 b of the socket 185 (namely, it does not abut against the upper surface 185 b of the socket 185 ).
- a lower surface 185 c of the socket 185 has a concave shape gradually recessed toward a center from an outer periphery, and the power supply rod 83 abuts against the center of the lower surface 185 c .
- a plug insertion opening 85 d may also be formed in the socket 85 on an opposite side to the bottom-equipped hole 85 a , and a power supply plug (for example, a banana plug) may be inserted as an external contact member into the plug insertion opening 85 d .
- a power supply plug for example, a banana plug
- the above-described embodiment represents the example in which the wafer attraction electrode 25 , the central heater electrode 26 , the FR attraction electrode 27 , and the outer peripheral heater electrode 28 are built in the ceramic base 20 , there is no specific reason to limit the present invention to that example.
- At least one of the above-mentioned electrodes may be built in the ceramic base 20 .
- an RF electrode may be built in the ceramic base 20 .
- structures of a power supply terminal, a power supply rod, and so on connected to the RF electrode may be formed as with the structures illustrated in FIG. 3 .
- the wafer placement table 10 in the above-described embodiment may include a lift pin hole through which a lift pin (not illustrated) for moving the wafer W up and down relative to the wafer placement surface 22 a is to be inserted.
- the lift pin hole is a hole penetrating the wafer placement table 10 in the up-down direction.
- a resin bonding layer may be used instead of the metallic bonding layer 40 .
- the upper pipe portions of the stepped insulating pipes 64 , 74 , 84 and 94 may or may not be inserted into holes in the resin bonding layer.
- using the metallic bonding layer 40 is more desirable than using the resin bonding layer.
- the lower end of the power supply terminal 82 may be formed flat, a pair of flat springs may be disposed on the socket 85 instead of the louver 86 , and the lower end of the power supply terminal 82 may be sandwiched between the pair of flat springs.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.
Description
- The present invention relates to a wafer placement table.
- There is known a wafer placement table in which a ceramic base including an electrostatic electrode embedded therein and a cooling base with a built-in coolant flow path are bonded to each other with a bonding layer interposed between both the bases (see, for example, Patent Literature 1 and 2). A DC voltage can be applied to the electrostatic electrode from an external power supply through a rod-shaped power supply terminal. The power supply terminal passes through a hole penetrating both the cooling base and the bonding layer and reaches the electrostatic electrode after further passing through a hole formed in the ceramic base. An end surface of the power supply terminal is often used as a contact surface for contact with an external contact pin. In consideration of connection to the contact pin, the contact surface needs to have a large area.
- PTL 1: Japanese Patent No. 5666748 B
- PTL 2: Japanese Patent No. 5666749 B
- However, increasing the area of the contact surface results in an increase in diameter of the power supply terminal and may adversely affect heating uniformity of a wafer in some cases. For instance, when a power supply terminal with a large diameter is disposed, a location at which the power supply terminal with the large diameter is disposed tends to become a hot spot because heat removal performance for a plasma heat input is reduced at such a location.
- The present invention has been accomplished with intent to solve the above-mentioned problem, and a main object of the present invention is to reduce the influence on the heating uniformity of the wafer.
- A wafer placement table according to the present invention includes a ceramic base having a wafer placement surface in an upper surface and including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding a lower surface of the ceramic base and an upper surface of the cooling base, a stepped hole penetrating the bonding layer and the cooling base in an up-down direction and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion, and a connection terminal bonded at an upper end to the electrode and inserted through the stepped insulating pipe.
- In the wafer placement table described above, the stepped hole includes the upper hole portion with the small diameter, and the upper hole portion passes through the region where the coolant flow path is formed. In other words, the large-diameter lower hole portion of the stepped hole is positioned under the coolant flow path. Therefore, the heat removal performance of the coolant flow path is not impaired to a large extent, and the influence upon heating uniformity of the wafer can be reduced.
- In this Description, words “up and down”, “left and right”, “front and back”, etc. are used in explanation of the present invention, but “up and down”, “left and right”, and “front and back” merely indicate relative positional relationships. Thus, when the orientation of the wafer placement table is changed, “up and down” may be changed to “left and right”, or “left and right” may be changed to “up and down” in expression of directions. Those cases also fall within the technical scope of the present invention.
- In the wafer placement table according to the present invention, a length of the upper hole portion is preferably longer than that of the lower hole portion. As the length of the upper hole portion with the small diameter increases, the influence upon the heating uniformity can be further reduced.
- The wafer placement table according to the present invention may include a socket that is arranged inside the lower pipe portion of the stepped insulating pipe and that includes an elastic support elastically supporting an outer peripheral surface of the connection terminal without abutting against a lower end surface of the connection terminal. Since the socket is arranged inside the large-diameter lower pipe portion of the stepped insulating pipe, a diameter of the socket can be set to be greater than a diameter of the upper pipe portion and a diameter of the connection terminal. As a result, a contact surface between the socket and an external contact member is increased, and the occurrence of a connection failure between them can be suppressed. Moreover, even if a force acting in a direction toward the electrode is applied to the socket, the socket does not press the connection terminal because the socket does not abut against the lower end surface of the connection terminal. In addition, the socket elastically supports an outer peripheral surface of the connection terminal without abutting against the lower end surface of the connection terminal. Therefore, the load generated when the external contact member is brought into contact with the socket and the load generated when the connection terminal is connected to the socket are not applied to a location at which the connection terminal and the electrode are bonded to each other, and the occurrence of a defect at the bonded location can be suppressed.
- In the wafer placement table including the socket according to the present invention, the socket may be in contact with the pipe stepped portion. With this feature, even if the force acting in the direction toward the electrode is applied to the socket, the force is exerted on the pipe stepped portion and the hole stepped portion, and the socket does not press the connection terminal.
- In the wafer placement table including the socket according to the present invention, the elastic support may include a plurality of leaf springs. With this feature, the elastic support can be formed in a relatively simple structure. In that case, the elastic support may include the leaf springs vertically arranged at intervals in a circumferential direction. Alternatively, the elastic support may include a plurality of plate members vertically arranged at intervals in the circumferential direction and an elastic member tightening the plate members from an outer side. With this feature as well, the elastic support can be formed in a relatively simple structure.
- In the wafer placement table including the socket according to the present invention, a diameter of the connection terminal may be smaller than or equal to a half of a diameter of the lower surface of the socket. With this feature, the diameter of the connection terminal can be made sufficiently smaller than that of the lower surface (contact surface) of the socket.
- In the wafer placement table including the socket according to the present invention, the lower surface of the socket may have a concave shape gradually recessed toward a center from an outer periphery. With this feature, when the external contact member is elastically contacted with the lower surface of the socket, a tip end of the contact member is less likely to deviate from the center of the lower surface of the socket.
- In the wafer placement table including the socket according to the present invention, the socket may include a plug insertion opening into which a plug is insertable. With this feature, the plug can be used as the external contact member.
-
FIG. 1 is a vertical sectional view of a wafer placement table 10 installed in achamber 100. -
FIG. 2 is a plan view of the wafer placement table 10. -
FIG. 3 is a partial enlarged view ofFIG. 1 . -
FIG. 4 is a perspective view of alouver 86. -
FIGS. 5A to 5C illustrate manufacturing steps of the wafer placement table 10. -
FIGS. 6A to 6D illustrate manufacturing steps of the wafer placement table 10. -
FIG. 7 is a sectional view of the structure of asocket 185 and its surroundings. -
FIG. 8 is a perspective view of thesocket 185. -
FIG. 9 is a sectional view illustrating another example of thesocket 85. - A preferred embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a vertical sectional view of a wafer placement table 10 installed in a chamber 100 (namely, a sectional view appearing when the wafer placement table 10 is cut along a plane including a center axis),FIG. 2 is a plan view of the wafer placement table 10,FIG. 3 is a partial enlarged view ofFIG. 1 (namely, a sectional view of the structure of asocket 85 and its surroundings), andFIG. 4 is a perspective view of alouver 86. In this Description, “A to B” expressing a numerical range is used as indicating that numerical values A and B denoted before and after “to” are included respectively as a lower limit value and an upper limit value of the range. - The wafer placement table 10 is used to perform CVD or etching on a wafer W with plasma and is fixed to a
mounting plate 101 that is disposed inside achamber 100 for a semiconductor process. The wafer placement table 10 includes aceramic base 20, acooling base 30, and ametallic bonding layer 40. - The
ceramic base 20 includes an outerperipheral portion 24 with an annular focus-ring placement surface 24 a around acentral portion 22 with a circularwafer placement surface 22 a. In the following, “focus ring” is abbreviated to “FR” in some cases. The wafer W is placed on the wafer placement surface 22 a, and afocus ring 78 is placed on the FR placement surface 24 a. Theceramic base 20 is made of a ceramic material represented by alumina or aluminum nitride, for example. The FR placement surface 24 a is one step lower than the wafer placement surface 22 a. - A
wafer attraction electrode 25 and acentral heater electrode 26 are built in thecentral portion 22 of theceramic base 20 in order from a side closer to the wafer placement surface 22 a. Thoseelectrodes - The
wafer attraction electrode 25 is a single-pole electrostatic electrode in the form of a circular plate or mesh. A layer of theceramic base 20 on an upper side than thewafer attraction electrode 25 functions as a dielectric layer. A wafer attraction DC power supply (not illustrated) is connected to thewafer attraction electrode 25 through both a power supply terminal (connection terminal) 62 and apower supply rod 63. Thepower supply terminal 62 is inserted through a stepped insulatingpipe 64. The stepped insulatingpipe 64 is inserted through a stepped hole penetrating both thecooling base 30 and thebonding layer 40. An upper surface of thepower supply terminal 62 is bonded to a lower surface of thewafer attraction electrode 25. Asocket 65 is arranged in a diameter-increased lower portion of the stepped insulatingpipe 64. A lower portion of thepower supply terminal 62 is inserted into alouver 66 that is arranged in a bottom-equipped hole formed in an upper surface of thesocket 65, and the lower portion is electrically connected to thesocket 65. A lower surface of thesocket 65 is in contact with an upper surface of thepower supply rod 63 that is biased upward by aspring 63 a. - The
central heater electrode 26 is formed of a resistance heating element that is wired in a one-stroke pattern to extend over the whole of the wafer placement surface 22 a from one end to the other end when viewed in plan. A central heater power supply (not illustrated) is connected to the one end of thecentral heater electrode 26 through both apower supply terminal 72 and apower supply rod 73. An upper surface of thepower supply terminal 72 is bonded to a lower surface of thecentral heater electrode 26 at the one end thereof. Thepower supply terminal 72 is inserted through a stepped insulatingpipe 74. The stepped insulatingpipe 74 is inserted through a stepped hole penetrating both thecooling base 30 and thebonding layer 40. Asocket 75 is arranged in a diameter-increased lower portion of the stepped insulatingpipe 74. A lower portion of thepower supply terminal 72 is inserted into alouver 76 that is arranged in a bottom-equipped hole formed in an upper surface of thesocket 75, and the lower portion is electrically connected to thesocket 75. A lower surface of thesocket 75 is in contact with an upper surface of thepower supply rod 73 that is biased upward by aspring 73 a. Although not illustrated, the other end of thecentral heater electrode 26 is also connected to the central heater power supply through both a power supply terminal and a power supply rod as with the one end of thecentral heater electrode 26. - An
FR attraction electrode 27 and an outerperipheral heater electrode 28 are built in the outerperipheral portion 24 of theceramic base 20 in order from a side closer to the FR placement surface 24 a. Thoseelectrodes - The
FR attraction electrode 27 is a single-pole electrostatic electrode in the form of a circular ring-shaped plate or mesh. A layer of theceramic base 20 on an upper side than theFR attraction electrode 27 functions as a dielectric layer. An FR attraction DC power supply (not illustrated) is connected to theFR attraction electrode 27 through both apower supply terminal 82 and apower supply rod 83. An upper surface of thepower supply terminal 82 is bonded to a lower surface of theFR attraction electrode 27. Thepower supply terminal 82 is inserted through a stepped insulatingpipe 84. The stepped insulatingpipe 84 is inserted through a stepped hole penetrating both thecooling base 30 and thebonding layer 40. Asocket 85 is arranged in a diameter-increased lower portion of the stepped insulatingpipe 84. A lower portion of thepower supply terminal 82 is inserted into thelouver 86 that is arranged in a bottom-equipped hole formed in an upper surface of thesocket 85, and the lower portion is electrically connected to thesocket 85. A lower surface of thesocket 85 is in contact with an upper surface of thepower supply rod 83 that is biased upward by aspring 83 a. - The outer
peripheral heater electrode 28 is formed of a resistance heating element that is wired in a one-stroke pattern to extend over the whole of the FR placement , surface 24 a from one end to the other end when viewed in plan. An outer peripheral heater power supply (not illustrated) is connected to the one end of the outerperipheral heater electrode 28 through both apower supply terminal 92 and apower supply rod 93. An upper surface of thepower supply terminal 92 is bonded to a lower surface of the outerperipheral heater electrode 28 at the one end thereof. Thepower supply terminal 92 is inserted through a stepped insulatingpipe 94. The stepped insulatingpipe 94 is inserted through a stepped hole penetrating both thecooling base 30 and thebonding layer 40. Asocket 95 is arranged in a diameter-increased lower portion of the stepped insulatingpipe 94. A lower portion of thepower supply terminal 92 is inserted into alouver 96 that is arranged in a bottom-equipped hole formed in an upper surface of thesocket 95, and the lower portion is electrically connected to thesocket 95. A lower surface of thesocket 95 is in contact with an upper surface of thepower supply rod 93 that is biased upward by aspring 93 a. Although not illustrated, the other end of the outerperipheral heater electrode 28 is also connected to the outer peripheral power supply through both a power supply terminal and a power supply rod as with the one end of the outerperipheral heater electrode 28. - The stepped insulating
pipes - The cooling
base 30 is a conductive circular plate member and includes alower member 30 a and anupper member 30 b bonded to each other with aconductive bonding layer 30 c interposed therebetween. Theconductive bonding layer 30 c can be made of the same material as that of the metallic bonding layer 40 (described later). The coolingbase 30 includes acoolant flow path 31 through which a coolant can circulate. Thecoolant flow path 31 is formed in a one-stroke pattern to extend over the whole of theceramic base 20 from one end to the other end when viewed in plan. Thecoolant flow path 31 is formed by a flow channel groove formed in a lower surface of theupper member 30 b and by thebonding layer 30 c covering the flow path groove from below. One end of thecoolant flow path 31 is in communication with acoolant supply path 32, and the other end is in communication with acoolant discharge path 33. Acoolant circulator 34 is a circulation pump with a temperature adjustment function. Thecoolant circulator 34 introduces the coolant at a temperature adjusted to a desired value to thecoolant supply path 32 and, after adjusting the temperature of the coolant discharged from thecoolant discharge path 33 of thecoolant flow path 31 to the desired value, introduces the discharged coolant again to thecoolant supply path 32. The coolingbase 30 is made of a conductive material containing a metal. The conductive material may be, for example, a composite material or a metal. The composite material may be a metal matrix composite material (also called a metal matrix composite (MMC)). The MMC may be, for example, a material containing Si, SiC and Ti, and a material made of a SiC porous body impregnated with Al and/or Si. The material containing Si, SiC and Ti is called SiSiCTi, the material made of the SiC porous body impregnated with Al is called AlSiC, and the material made of the SiC porous body impregnated with Si is called SiSiC. The metal may be, for example, Mo. The coolingbase 30 is connected to a radiofrequency power supply 36 for generating plasma and is used as a radio frequency electrode. - The
metallic bonding layer 40 bonds a lower surface of theceramic base 20 and an upper surface of thecooling base 30. Themetallic bonding layer 40 may be a layer made of, for example, a solder or a metallic brazing material. Themetallic bonding layer 40 is formed by, for example, TCB (Thermal compression bonding). The TCB indicates a known method of sandwiching a metallic bonding material between two members to be bonded, and press-bonding those two members in a state in which those members are heated to a temperature lower than or equal to the solidus temperature of the metallic bonding material. - The wafer placement table 10 includes a
BS gas path 42 through which a backside gas (BS gas) is supplied to a back surface of the wafer W. TheBS gas path 42 is constituted by a steppedhole 42 a penetrating both thecooling base 30 and themetallic bonding layer 40 in an up-down direction, and by a through-hole 42 b communicating with the steppedhole 42 a and penetrating theceramic base 20 in the up-down direction. TheBS gas path 42 is connected to a BSgas supply source 43. The BS gas may be, for example, a heat conduction gas (e.g., a He gas). - Structures of the
power supply terminals power supply terminal 82 and its surroundings are described with reference toFIG. 3 in the following. - The stepped
hole 81 is a hole being circular in cross-section and penetrating both themetallic bonding layer 40 and thecooling base 30 in the up-down direction. The steppedhole 81 includes anupper hole portion 81 a with a small diameter, alower hole portion 81 b with a large diameter, and a hole steppedportion 81 c between theupper hole portion 81 a and thelower hole portion 81 b. Theupper hole portion 81 a penetrates themetallic bonding layer 40, theupper member 30 b of thecooling base 30, and theconductive bonding layer 30 c and further extends up to thelower member 30 a. Theupper hole portion 81 a passes through aregion 37 of thecooling base 30 where thecoolant flow path 31 is formed (namely, through a wall portion of thecooling base 30 partitioning adjacent parts of the coolant flow path 31) in the up-down direction. Thelower hole portion 81 b is formed to extend from an outer peripheral position of the hole steppedportion 81 c to reach a lower surface of thelower member 30 a. A length of theupper hole portion 81 a is longer than that of thelower hole portion 81 b. Thus, thecoolant flow path 31 can be formed in a sufficient height (length in the up-down direction), and the heat removal performance of thecoolant flow path 31 is increased. - The stepped insulating
pipe 84 is inserted through the steppedhole 81 and is stuck to an inner surface of the steppedhole 81 with asilicone adhesive layer 88 interposed therebetween. An outer shape of the stepped insulatingpipe 84 matches with a shape of the steppedhole 81. The stepped insulatingpipe 84 includes anupper pipe portion 84 a with a small diameter, alower pipe portion 84 b with a large diameter, and a pipe steppedportion 84 c between theupper pipe portion 84 a and thelower pipe portion 84 b. Theupper pipe portion 84 a is positioned in theupper hole portion 81 a, and thelower pipe portion 84 b is positioned in thelower hole portion 81 b. An outer surface of the pipe steppedportion 84 c is stuck to the hole steppedportion 81 c with theadhesive layer 88 interposed therebetween. - A
terminal hole 27 a is formed in theceramic base 20 over a range from the lower surface of theFR attraction electrode 27 to the lower surface of theceramic base 20. - The
power supply terminal 82 is inserted through both theterminal hole 27 a and theupper pipe portion 84 a of the stepped insulatingpipe 84 and is stuck to an inner surface of theupper pipe portion 84 a with asilicone adhesive layer 89 interposed therebetween. The upper surface of thepower supply terminal 82 is bonded to theFR attraction electrode 27 with ametallic brazing layer 27 b interposed therebetween, and the lower portion of thepower supply terminal 82 reaches the inside of thelower pipe portion 84 b of the stepped insulatingpipe 84. - The
socket 85 is a cylindrical member made of a metal (for example, Cu) and is fitted to thelower pipe portion 84 b of the stepped insulatingpipe 84. Thesocket 85 has a bottom-equippedhole 85 a formed in a central portion of its upper surface. An annularupper surface 85 b of thesocket 85 abuts against the pipe steppedportion 84 c of the stepped insulatingpipe 84. A diameter Φ of a circularlower surface 85 c of thesocket 85 substantially matches with an inner diameter of thelower pipe portion 84 b of the stepped insulatingpipe 84. Thelower surface 85 c is a concave surface gradually recessed toward a center from an outer periphery. A taper angle θ of the concave surface is preferably greater than or equal to 90° and smaller than 180°. Thelouver 86 made of a metal (for example, beryllium copper) is arranged in the bottom-equippedhole 85 a of thesocket 85. Thelouver 86 includes aring portion 86 a in each of upper and lower sides and a plurality ofstrip members 86 b vertically arranged at intervals in a circumferential direction of thering portion 86 a (seeFIG. 4 ). Thering portion 86 a is in contact with an inner peripheral wall of the bottom-equippedhole 85 a of thesocket 85. Thering portion 86 a may have an annular shape or a C shape. Thestrip members 86 b couple the upper andlower ring portions 86 a to each other and have a shape curving toward a center axis of thelouver 86. The lower portion of thepower supply terminal 82 is inserted into thelouver 86. An outer peripheral surface of thepower supply terminal 82 is in contact with thestrip members 86 b, and a lower end surface of thepower supply terminal 82 is apart from a bottom surface of the bottom-equippedhole 85 a without abutting against the bottom surface. Thestrip members 86 b are pressed by thepower supply terminal 82 outward in a radial direction to come into an elastically deformed state. In other words, thelouver 86 elastically supports the outer peripheral surface of thepower supply terminal 82 in its lower portion in such a manner that the lower end surface of thepower supply terminal 82 does not abut against the bottom surface of the bottom-equippedhole 85 a of thesocket 85. A relationship between the diameter Φ of the lower surface of thesocket 85 and a diameter ψ of thepower supply terminal 82 preferably satisfies ψ ≤ Φ/2. - An example of manufacturing the wafer placement table 10 will be described below with reference to
FIGS. 5 and 6 .FIGS. 5 and 6 each illustrate manufacturing steps of the wafer placement table 10. First, a ceramicsintered body 120 in the form of a circular plate becoming theceramic base 20 is fabricated (FIG. 5A ). In more detail, the ceramicsintered body 120 is fabricated by firing a ceramic powder compact with a hot press and then forming various holes by cutting. Thewafer attraction electrode 25, thecentral heater electrode 26, theFR attraction electrode 27, and the outerperipheral heater electrode 28 are built in the ceramicsintered body 120. The various holes provide the through-hole 42 b serving as part of theBS gas path 42 and holes through which thepower supply terminals - In parallel to the above-mentioned process, the
lower member 30 a and theupper member 30 b are fabricated (FIG. 5A ). Thecoolant supply path 32, thecoolant discharge path 33, and holes serving as parts of the steppedholes lower member 30 a by cutting. A flow path groove 131 becoming thecoolant flow path 31 and holes serving as parts of the steppedholes upper member 30 b by cutting. When the ceramicsintered body 120 is made of alumina, thelower member 30 a and theupper member 30 b are preferably made of SiSiCTi or A1SiC. This is because the thermal expansion coefficient of alumina is substantially the same as that of SiSiCTi or A1SiC. When the ceramicsintered body 120 is made of A1N, thelower member 30 a and theupper member 30 b are preferably made of Mo. This is because the thermal expansion coefficient of A1N is substantially the same as that of Mo. - A circular plate member made of SiSiCTi can be fabricated, by way of example, as follows. First, a powder mixture is prepared by mixing silicon carbide, metal Si, and metal Ti. Next, a compact in the form of a circular plate is fabricated from the obtained power mixture by uniaxial press-molding, and the compact is sintered under an inert atmosphere with a hot press. Thus, the circular plate member made of SiSiCTi is obtained.
- A
metallic bonding material 130 c including through-holes formed at required positions is arranged between thelower member 30 a and theupper member 30 b, and ametallic bonding material 140 including through-holes formed at required positions is arranged between theupper member 30 b and the ceramic sintered body 120 (FIG. 5A ). The above-mentioned materials and members are laminated, and a laminate is obtained. - Then, the laminate is pressed under heating (by the TCB), and a bonded
body 110 is obtained (FIG. 5B ). The bondedbody 110 is a body in which the ceramicsintered body 120 is bonded, with interposition of themetallic bonding layer 40, to the upper surface of thecooling base 30 including thelower member 30 a and theupper member 30 b that are bonded to each other with theconductive bonding layer 30 c interposed therebetween. An opening of the flow path groove 131 in theupper member 30 b is covered with theconductive bonding layer 30 c and thelower member 30 a. Thus, thecoolant flow path 31 is formed inside the coolingbase 30. The stepped holes 42 a, 61, 71, 81 and 91 are formed in themetallic bonding layer 40 and thecooling base 30. - The TCB is performed, by way of example, as follows. The laminate is pressed and bonded together at a temperature lower than or equal to the solidus temperature of the metallic bonding material (for example, a temperature higher than or equal to a value obtained by subtracting 20° C. from the solidus temperature and lower than or equal to the solidus temperature). Then, the temperature of the laminate is returned to a room temperature. As a result, the metallic bonding material becomes the metallic bonding layer. An A1—Mg bonding material or an A1—Si—Mg bonding material can be used as the metallic bonding material in the above-mentioned process. When the TCB is performed using the A1—Si—Mg bonding material, for example, the laminate is pressed in a state heated under a vacuum atmosphere. The metallic bonding material used here preferably has a thickness of about 100 µm.
- Then, an outer peripheral portion of the ceramic
sintered body 120 is cut to form a step, whereby theceramic base 20 including thecentral portion 22 and the outerperipheral portion 24 is obtained (FIG. 5C ). - Then, the wafer placement table 10 is obtained by attaching necessary members to the stepped
holes hole 81. To the other steppedholes - First, the upper surface of the
power supply terminal 82 is bonded through theterminal hole 27 a extending from the lower surface of theceramic base 20 to theFR attraction electrode 27 by using a metallic brazing material, whereby thepower supply terminal 82 and theFR attraction electrode 27 are bonded to each other with themetallic brazing layer 27 b interposed therebetween (FIGS. 6A and 6B ). For instance, thepower supply terminal 82 made of Mo is bonded to theFR attraction electrode 27 made of WC or Mo by using the metallic bonding material (for example, Au—Ge, Al, or Ag). - Then, a silicone adhesive is applied to an outer peripheral surface of the stepped insulating
pipe 84 and an inner peripheral surface of the small-diameterupper pipe portion 84 a. Thereafter, the stepped insulatingpipe 84 is inserted through the steppedhole 81 while thepower supply terminal 82 is inserted through the stepped insulatingpipe 84. The adhesive is then solidified to form theadhesive layers 88 and 89 (FIGS. 6B and 6C ). A lower end of thepower supply terminal 82 is in a state projecting into the inside of the large-diameterlower pipe portion 84 b. - Then, the
socket 85 with thelouver 86 is prepared and assembled into the large-diameterlower pipe portion 84 b of the stepped insulatingpipe 84 while thepower supply terminal 82 is inserted into the louver 86 (FIGS. 6C and 6D ). At that time, even if a force acting in a direction toward theFR attraction electrode 27 is applied to thesocket 85, the force is exerted on the pipe steppedportion 84 c and the hole steppedportion 81 c because thesocket 85 does not abut against the lower end surface of thepower supply terminal 82. Therefore, thesocket 85 does not press thepower supply terminal 82. In addition, thelouver 86 in thesocket 85 elastically supports the outer peripheral surface of thepower supply terminal 82 without abutting against the lower end surface of thepower supply terminal 82. Therefore, the load generated when thepower supply terminal 82 is connected to thelouver 86 in thesocket 85 is not applied to themetallic brazing layer 27 b at which thepower supply terminal 82 and theFR attraction electrode 27 are bonded to each other. - The necessary members are attached to the other stepped
holes - An example of use of the wafer placement table 10 will be described below with reference to
FIG. 1 . The wafer placement table 10 is set, as described above, on the mountingplate 101 in thechamber 100. Ashower head 100 a discharging a process gas toward the inside of thechamber 100 from many gas injection holes is arranged at a ceiling surface of thechamber 100. - The
focus ring 78 is placed on the FR placement surface 24 a of the wafer placement table 10, and the wafer W in the form of a disk is placed on the wafer placement surface 22 a. Thefocus ring 78 includes a step formed along an inner periphery of its upper end portion not to interfere with the wafer W. In this state, a DC voltage is applied to thewafer attraction electrode 25 to attract the wafer W onto the wafer placement surface 22 a, and a DC voltage is applied to theFR attraction electrode 27 to attract thefocus ring 78 onto the FR placement surface 24 a. Furthermore, the BS gas (for example, a helium gas) is supplied to the back surface of the wafer W from theBS gas path 42, and currents are supplied to thecentral heater electrode 26 and the outerperipheral heater electrode 28 to make control such that the wafer W is heated to a high temperature. Then, the inside of thechamber 100 is held under a predetermined vacuum atmosphere (or a reduced-pressure atmosphere), and a radio frequency voltage from the radiofrequency power supply 36 is applied to thecooling base 30 while the process gas is supplied from theshower head 100 a. As a result, plasma is generated between the coolingbase 30 and theshower head 100 a. The wafer W is processed with the generated plasma. The temperature of the wafer W is adjusted as required by circulating the coolant through thecoolant flow path 31. - In the above-described wafer placement table 10 according to this embodiment, the stepped
hole 81 includes theupper hole portion 81 a with the small diameter, and theupper hole portion 81 a passes through theregion 37 of thecooling base 30 where thecoolant flow path 31 is formed (namely, through the wall portion of thecooling base 30 partitioning the adjacent parts of the coolant flow path 31). In other words, the large-diameterlower hole portion 81 b of the steppedhole 81 is positioned under thecoolant flow path 31. Accordingly, the heat removal performance of thecoolant flow path 31 is not impaired to a large extent, and the influence upon heating uniformity of the wafer W can be reduced. - Furthermore, since the length of the
upper hole portion 81 a is longer than that of thelower hole portion 81 b, the influence upon the heating uniformity can be further reduced. - Since the
socket 85 is arranged inside the large-diameterlower pipe portion 84 b of the stepped insulatingpipe 84, the diameter Φ of the lower surface of thesocket 85 can be set to be greater than the diameter of theupper pipe portion 84 a and the diameter ψ of thepower supply terminal 82. As a result, a contact surface between the lower surface of thesocket 85 and thepower supply rod 83 serving as an external contact member is increased, and the occurrence of a connection failure between them can be suppressed. Moreover, even if the force acting in the direction toward theFR attraction electrode 27 is applied to thesocket 85, thesocket 85 does not press thepower supply terminal 82 because thesocket 85 does not abut against the lower end surface of thepower supply terminal 82. In addition, thelouver 86 in thesocket 85 elastically supports the outer peripheral surface of thepower supply terminal 82 without abutting against the lower end surface of thepower supply terminal 82. Therefore, the load generated when thepower supply rod 83 is brought into contact with thesocket 85 and the load generated when thepower supply terminal 82 is connected to thesocket 85 are not applied to themetallic brazing layer 27 b at which thepower supply terminal 82 and theFR attraction electrode 27 are bonded to each other, and the occurrence of a defect in themetallic brazing layer 27 b can be suppressed. - Because of the
socket 85 being in contact with the pipe steppedportion 84 c, even if the force acting in the direction toward theFR attraction electrode 27 is applied to thesocket 85, the force is exerted on the pipe steppedportion 84 c and the hole steppedportion 81 c, and thesocket 85 does not press thepower supply terminal 82. - Furthermore, the
strip members 86 b (leaf springs) are used as an elastic support. More specifically, thelouver 86 including thestrip members 86 b (leaf springs) vertically arranged at intervals in the circumferential direction is employed as the elastic support. Therefore, the elastic support can be formed in a relatively simple structure. - The diameter ψ of the
power supply terminal 82 is preferably set to be smaller than or equal to a half of the diameter Φ of thelower surface 85 c of the socket 85 (i.e., ψ ≤ Φ/2). This condition enables the diameter of thepower supply terminal 82 to be held sufficiently smaller than that of thelower surface 85 c (contact surface) of thesocket 85. As a result, a reduction in heating uniformity of the wafer W due to the presence of thepower supply terminal 82 can be sufficiently suppressed. - The
lower surface 85 c of thesocket 85 has a concave shape gradually recessed toward the center from the outer periphery. Accordingly, when the externalpower supply rod 83 is elastically contacted with thelower surface 85 c of thesocket 85 by thespring 83 a, a tip end of thepower supply rod 83 is less likely to deviate from the center of thelower surface 85 c of thesocket 85. - The above-mentioned various advantageous effects can be obtained with not only the structure of the
power supply terminal 82 and its surroundings illustrated inFIG. 3 , but also the structures of thepower supply terminals power supply terminal 82 and its surroundings. - It is needless to say that the present invention is not limited to the above-described embodiment and can be implemented in various forms insofar as those forms fall within the technical scope of the present invention.
- For instance, while the
socket 85 including thelouver 86 assembled thereinto is used in the above-described embodiment, asocket 185 illustrated inFIGS. 7 and 8 may be used instead.FIG. 7 is a sectional view of the structure of thesocket 185 and its surroundings, andFIG. 8 is a perspective view of thesocket 185. InFIG. 7 , components similar to the above-described embodiment are denoted by the same reference signs, and description of those components is omitted. A stepped insulatingpipe 184 is inserted through the steppedhole 81 and has an outer shape in match with the shape of the steppedhole 81. The stepped insulatingpipe 184 includes anupper pipe portion 184 a with a small diameter, alower pipe portion 184 b with a large diameter, and a pipe steppedportion 184 c between theupper pipe portion 184 a and thelower pipe portion 184 b. The pipe steppedportion 184 c abuts against anupper surface 185 b of thesocket 185. Aspace 184 d in which anelastic support 185 d is to be accommodated is formed at a boundary between theupper pipe portion 184 a and the pipe steppedportion 184 c. Theelastic support 185 d includes a plurality ofplate members 185 e vertically arranged at intervals in the circumferential direction and an outer spring (elastic member) 185 f tightening theplate members 185 e from the outer side. Theplate members 185 e are made of a metal and are members obtained by dividing a cylinder into plural parts (four here) by vertical slits, each of the members having a circular arc shape in cross-section (FIG. 8 ). A lower end of eachplate member 185 e is a fixed end integrated with thesocket 185, and an upper end of theplate member 185 e is a free end. Theouter spring 185 f is a metal-made spring and is preferably made of a nonmagnetic metallic material (for example, Inconel) or a metallic material that is not magnetized at high temperature. The diameter of a circle along which theplate members 185 e are arranged is a little smaller than that of thepower supply terminal 82. Accordingly, when thepower supply terminal 82 is inserted into a space at a center of theelastic support 185 d, theplate members 185 e are pushed to expand outward in the radial direction, but theouter spring 185 f tightens theplate members 185 e and thepower supply terminal 82 from the outer side. As a result, thepower supply terminal 82 is elastically supported by theelastic support 185 d. On that occasion, the lower end surface of thepower supply terminal 82 is apart from theupper surface 185 b of the socket 185 (namely, it does not abut against theupper surface 185 b of the socket 185). Alower surface 185 c of thesocket 185 has a concave shape gradually recessed toward a center from an outer periphery, and thepower supply rod 83 abuts against the center of thelower surface 185 c. With the structure described above, similar advantageous effects to those in the above-described embodiment can also be obtained. When theelastic support 185 d can elastically support thepower supply terminal 82 without theouter spring 185 f, theouter spring 185 f may be omitted. A similar structure to that illustrated inFIG. 7 may be applied to the structures of thepower supply terminals - The structure of elastically contacting the
power supply rod 83 with thelower surface 85 c of thesocket 85 is used, by way of example, in the above-described embodiment. However, as illustrated inFIG. 9 , aplug insertion opening 85 d may also be formed in thesocket 85 on an opposite side to the bottom-equippedhole 85 a, and a power supply plug (for example, a banana plug) may be inserted as an external contact member into theplug insertion opening 85 d. Such a structure can also provide similar advantageous effects to those in the above-described embodiment. - While the above-described embodiment represents the example in which the
wafer attraction electrode 25, thecentral heater electrode 26, theFR attraction electrode 27, and the outerperipheral heater electrode 28 are built in theceramic base 20, there is no specific reason to limit the present invention to that example. At least one of the above-mentioned electrodes may be built in theceramic base 20. Moreover, an RF electrode may be built in theceramic base 20. In that case, structures of a power supply terminal, a power supply rod, and so on connected to the RF electrode may be formed as with the structures illustrated inFIG. 3 . - The wafer placement table 10 in the above-described embodiment may include a lift pin hole through which a lift pin (not illustrated) for moving the wafer W up and down relative to the wafer placement surface 22 a is to be inserted. The lift pin hole is a hole penetrating the wafer placement table 10 in the up-down direction.
- While, in the above-described embodiment, the
ceramic base 20 and thecooling base 30 are bonded to each other with themetallic bonding layer 40 interposed therebetween, a resin bonding layer may be used instead of themetallic bonding layer 40. In that case, the upper pipe portions of the stepped insulatingpipes metallic bonding layer 40 is more desirable than using the resin bonding layer. - In the above-described embodiment, the lower end of the
power supply terminal 82 may be formed flat, a pair of flat springs may be disposed on thesocket 85 instead of thelouver 86, and the lower end of thepower supply terminal 82 may be sandwiched between the pair of flat springs. - The present application claims priority from Japanese Patent Application No. 2021-171041, filed on Oct. 19, 2021, the entire contents of which are incorporated herein by reference.
Claims (10)
1. A wafer placement table comprising:
a ceramic base having a wafer placement surface in an upper surface and including an electrode;
a cooling base including a coolant flow path formed therein;
a bonding layer bonding a lower surface of the ceramic base and an upper surface of the cooling base;
a stepped hole penetrating the bonding layer and the cooling base in an up-down direction and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed;
a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and
a connection terminal bonded at an upper end to the electrode and inserted through the stepped insulating pipe.
2. The wafer placement table according to claim 1 ,
wherein a length of the upper hole portion is longer than a length of the lower hole portion.
3. The wafer placement table according to claim 1 ,
wherein the wafer placement table comprises a socket that is arranged inside the lower pipe portion of the stepped insulating pipe and that includes an elastic support elastically supporting an outer peripheral surface of the connection terminal without abutting against a lower end surface of the connection terminal.
4. The wafer placement table according to claim 3 ,
wherein the socket is in contact with the pipe stepped portion.
5. The wafer placement table according to claim 3 ,
wherein the elastic support includes a plurality of leaf springs.
6. The wafer placement table according to claim 5 ,
wherein the leaf springs are vertically arranged at intervals in a circumferential direction.
7. The wafer placement table according to claim 3 ,
wherein the elastic support includes a plurality of plate members vertically arranged at intervals in a circumferential direction and an elastic member tightening the plate members from an outer side.
8. The wafer placement table according to claim 3 ,
wherein a diameter of the connection terminal is smaller than or equal to a half of a diameter of a lower surface of the socket.
9. The wafer placement table according to claim 3 ,
wherein a lower surface of the socket has a concave shape gradually recessed toward a center from an outer periphery.
10. The wafer placement table according to claim 3 ,
wherein the socket includes a plug insertion opening into which a plug is insertable.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021171041A JP2023061196A (en) | 2021-10-19 | 2021-10-19 | Wafer placing table |
JP2021-171041 | 2021-10-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20230123870A1 true US20230123870A1 (en) | 2023-04-20 |
Family
ID=85981284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/938,388 Pending US20230123870A1 (en) | 2021-10-19 | 2022-10-06 | Wafer placement table |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230123870A1 (en) |
JP (1) | JP2023061196A (en) |
KR (1) | KR20230055957A (en) |
CN (1) | CN115995374A (en) |
TW (1) | TW202318580A (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6182082B2 (en) | 2013-03-15 | 2017-08-16 | 日本碍子株式会社 | Dense composite material, manufacturing method thereof, and member for semiconductor manufacturing equipment |
JP6182084B2 (en) | 2013-03-25 | 2017-08-16 | 日本碍子株式会社 | Dense composite material, manufacturing method thereof, joined body, and member for semiconductor manufacturing apparatus |
-
2021
- 2021-10-19 JP JP2021171041A patent/JP2023061196A/en active Pending
-
2022
- 2022-06-21 CN CN202210702212.9A patent/CN115995374A/en active Pending
- 2022-10-06 US US17/938,388 patent/US20230123870A1/en active Pending
- 2022-10-11 KR KR1020220129593A patent/KR20230055957A/en not_active Application Discontinuation
- 2022-10-11 TW TW111138328A patent/TW202318580A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW202318580A (en) | 2023-05-01 |
KR20230055957A (en) | 2023-04-26 |
CN115995374A (en) | 2023-04-21 |
JP2023061196A (en) | 2023-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210074568A1 (en) | Wafer holding body | |
KR20190032545A (en) | Wafer placement table | |
JP4858319B2 (en) | Wafer holder electrode connection structure | |
US20230123870A1 (en) | Wafer placement table | |
JP2018101711A (en) | Electrostatic chuck | |
US20230223245A1 (en) | Wafer placement table | |
US20210242046A1 (en) | Ceramic heater | |
KR20230028219A (en) | electrostatic chuck device | |
TWI826124B (en) | Member for semiconductor manufacturing apparatus | |
US20230111137A1 (en) | Wafer placement table | |
KR102665928B1 (en) | Member for semiconductor manufacturing apparatus | |
US20240128063A1 (en) | Wafer placement table | |
TWI836924B (en) | Wafer placement table | |
JP7483121B2 (en) | Semiconductor manufacturing equipment parts | |
WO2024116412A1 (en) | Member for semiconductor manufacturing device | |
US20230146001A1 (en) | Wafer placement table | |
US20230343565A1 (en) | Wafer placement table | |
KR20240003436A (en) | wafer loading stand | |
US20230187252A1 (en) | Substrate holder | |
KR20240032690A (en) | wafer placement table | |
KR20230141466A (en) | Wafer placement table | |
KR20240032691A (en) | wafer placement table | |
JP2024004894A (en) | holding device | |
KR20230053499A (en) | Wafer placement table | |
KR20240046104A (en) | wafer placement table |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NGK INSULATORS, LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAKEBAYASHI, HIROSHI;KUNO, TATSUYA;INOUE, SEIYA;SIGNING DATES FROM 20220908 TO 20220915;REEL/FRAME:061333/0139 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |