US20220285135A1 - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- US20220285135A1 US20220285135A1 US17/625,730 US202017625730A US2022285135A1 US 20220285135 A1 US20220285135 A1 US 20220285135A1 US 202017625730 A US202017625730 A US 202017625730A US 2022285135 A1 US2022285135 A1 US 2022285135A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000002347 injection Methods 0.000 claims description 108
- 239000007924 injection Substances 0.000 claims description 108
- 238000003780 insertion Methods 0.000 claims description 35
- 230000037431 insertion Effects 0.000 claims description 35
- 239000010409 thin film Substances 0.000 abstract description 12
- 239000007789 gas Substances 0.000 description 132
- 230000003247 decreasing effect Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions.
- thin film layers, thin film circuit patterns, and/or optical patterns are required to be formed on a substrate in order to manufacture semiconductor devices, flat panel displays, solar cells, or the like.
- processes such as a deposition process of depositing on a substrate a thin film made of a specific material, a photo process of selectively exposing the thin film by means of a photosensitive material, and an etching process of selectively removing an exposed portion of the thin film to form a pattern, are performed on the substrate.
- a conventional substrate processing apparatus includes a chamber for processing a substrate, a substrate support for supporting the substrate, and an electrode unit disposed above the substrate support.
- the conventional substrate processing apparatus performs the processing of the substrate by supplying gas to the substrate through the electrode unit.
- the conventional substrate processing apparatus includes a lower electrode with gas inlet and outlet surfaces having a flat shape thereon, and an upper electrode with gas supply passages, the diameters of which are equal in size, at the center and outer portions thereof.
- the conventional substrate processing apparatus does not take into account the flow rate and residence time of gas and the difference between plasma densities at the center and outer portions of the upper electrode in the process of supplying the gas through the lower electrode, which leads to deterioration in processing efficiency of the substrate.
- Various embodiments are directed to a substrate processing apparatus configured such that a second electrode as a lower electrode has an insertion hole through which gas is supplied, an opening area of an inlet of the insertion hole is gradually increased from the center toward the edge of the second electrode, and the second electrode has a concave dome-shaped lower surface. Accordingly, the substrate processing apparatus can increase a residence time of gas by reducing a flow rate of the gas at the edge rather than the center of the second electrode, form a uniform thin film by increasing a plasma density, and enhance efficiency in a substrate processing process.
- a substrate processing apparatus that includes a process chamber configured to provide a reaction space for processing a substrate, a substrate support configured to support the substrate, a first electrode installed in the process chamber to face the substrate and having a plurality of protruding electrodes protruding toward the substrate, and a second electrode positioned beneath the first electrode and having a plurality of insertion holes into which the respective protruding electrodes are inserted.
- Each of the insertion holes of the second electrode includes a first hole at its upper portion, an associated one of the protruding electrodes being inserted into the first hole, and a second hole at its lower portion facing the upper portion.
- the first hole has a first opening
- the second hole has a second opening. An area of the first opening at a center of the second electrode is different from an area of the first opening at an edge of the second electrode.
- a substrate processing apparatus that includes a process chamber configured to provide a reaction space for processing a substrate, a substrate support configured to support the substrate, a first injection plate installed in the process chamber to face the substrate, and having a first gas injection hole therein and a plurality of protruding nozzles protruding toward the substrate, and a second injection plate positioned beneath the first injection plate, and having a plurality of second gas injection holes into which the respective protruding nozzles are inserted and through which second gas is injected.
- Each of the second gas injection holes of the second injection plate includes a first hole at its upper portion, an associated one of the protruding nozzles being inserted into the first hole, and a second hole at its lower portion facing the upper portion.
- the first hole has a first opening
- the second hole has a second opening. An area of the first opening at a center of the second injection plate is different from an area of the first opening at an edge of the second injection plate.
- FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
- FIG. 2 is an enlarged view illustrating a first example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 3 is an enlarged view of portion “C” of FIG. 2 .
- FIG. 4 is an enlarged view illustrating a second example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 5 is an enlarged view of portion “D” of FIG. 4 .
- FIG. 6 is an enlarged view illustrating a third example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 7 is an enlarged view of portion “E” of FIG. 6 .
- FIG. 8 is an enlarged view illustrating a fourth example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 9 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.
- FIG. 10 is an enlarged view illustrating a first example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 11 is an enlarged view of portion “C” of FIG. 10 .
- FIG. 12 is an enlarged view illustrating a second example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 13 is an enlarged view of portion “D” of FIG. 12 .
- FIG. 14 is an enlarged view illustrating a third example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 15 is an enlarged view of portion “E” of FIG. 14 .
- FIG. 16 is an enlarged view illustrating a fourth example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
- the substrate processing apparatus which is designated by reference numeral 100 , according to the embodiment of the present disclosure includes a process chamber 110 , a substrate support 120 , a chamber lid 130 , and an electrode module 140 including a first electrode 141 and a second electrode 142 which face the substrate support.
- the process chamber 110 provides a reaction space 101 for processing a substrate(s).
- the bottom on one side of the process chamber 110 may communicate with an exhaust port (not shown) for exhausting gas from the reaction space 101 .
- the substrate support 120 is installed inside the process chamber 110 and supports a plurality of substrates S or a single large-area substrate S.
- the substrate support 120 is supported by a support shaft (not shown) passing through the central bottom of the process chamber 110 .
- the support shaft exposed out of the lower surface of the process chamber 110 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 110 .
- the substrate support 120 may be raised or lowered by a drive unit (not shown), and may also be rotated by driving the drive unit in some cases.
- the chamber lid 130 is installed to cover the upper portion of the process chamber 110 to seal the reaction space 101 .
- the chamber lid 130 supports the electrode module 140 , which includes the first electrode 141 as an upper electrode and the second electrode 142 as a lower electrode, and the electrode module 140 is inserted into and detachably coupled to the chamber lid 130 .
- the chamber lid 130 may be provided, on the upper surface thereof, with a first gas supply unit (not shown) and a second gas supply unit (not shown) to supply first gas and second gas to the electrode module 140 within the process chamber 110 .
- the first gas supply unit (not shown) supplies reaction gas as the first gas to the electrode module 140 through a first gas supply line 151 .
- the reaction gas refers to gas for plasma formation or for incidental reaction.
- the reaction gas may be comprised of hydrogen (H 2 ), nitrogen (N 2 ), oxygen (O 2 ), nitrogen dioxide (N 2 O), ammonia (NH 3 ), water (H 2 O), ozone (O 3 ), or the like.
- the second gas supply unit (not shown) supplies source gas as the second gas to the gas injection module 140 through a second gas supply line 152 .
- the source gas refers to gas containing a main component of a thin film to be formed.
- the source gas may be gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), or the like.
- a plasma power supply (not shown) for supply of plasma power may be installed outside the process chamber 110 .
- the first and second electrodes 141 and 142 of the electrode module 140 may be detachably coupled to the upper portion of the process chamber so as to face the substrate support 120 .
- the first electrode 141 may have a structure such as a polygonal flat plate or a circular plate.
- the first electrode 141 may include a plurality of integral or separate protruding electrodes 141 a , and the protruding electrodes 141 a may be connected to the first electrode 141 to have the same voltage as the first electrode 141 .
- the second electrode 142 may have a structure such as a polygonal flat plate or a circular plate.
- the second electrode 142 may be installed in the process chamber and a have a plurality of insertion holes 142 a formed to allow the respective protruding electrodes 141 a to pass therethrough.
- FIG. 2 is an enlarged view illustrating a first example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 3 is an enlarged view of portion “C” of FIG. 2 .
- each insertion hole 142 a in the substrate processing apparatus includes a first hole 142 a 1 at an upper portion thereof, an associated one of the protruding electrodes being inserted into the first hole 142 a 1 , and a second hole 142 a 2 at a lower portion thereof facing the upper portion.
- the first hole 142 a 1 has a first opening
- the second hole 142 a 2 has a second opening.
- a first opening area Di as the opening area of the first opening is different from a second opening area Do as the opening area of the second opening.
- the first opening areas Di may be implemented differently for each region.
- the first opening areas Di in the substrate processing apparatus may be implemented differently at a center of the second electrode 142 , at a periphery of the center, and at an edge of the second electrode 142 .
- the first opening area Di 1 at the center of the second electrode 142 may be smaller than the first opening areas Di 2 , Di 3 , . . . at the periphery of the center of the second electrode and the first opening area Di n at the edge of the second electrode.
- the first opening areas Di increase from the center via the periphery toward the edge of the second electrode 142 .
- the flow rate of gas is slower at the edge than at the center, thereby increasing the residence time of the gas in the reaction space and increasing a plasma density.
- Each first opening area Di is an area of the associated insertion hole 142 a passing through the upper surface of the second electrode 142
- each second opening area Do is an area of the associated insertion hole 142 a passing through the lower surface of the second electrode 142 .
- the insertion hole 142 a of the first example may include a first region having a first height H 1 and the first opening and a second region having a second height H 2 and the second opening, which are directed from the upper portion toward the lower portion of the insertion hole in the direction of insertion of the protruding electrode.
- the first region is a region corresponding to the first hole 142 a 1
- the second region is a region corresponding to the second hole 142 a 2 .
- the first region and the first hole will be designated by the same reference numeral
- the second region and the second hole will be designated by the same reference numeral.
- the first region 142 a 1 corresponds to an upper portion of the insertion hole 142 a according to the first example.
- the first region has the first opening area Di in the vertical direction (Z-axis direction) and is positioned above the second region 142 a 2 .
- the first region 142 a 1 may be formed such that the upper end thereof passes through the upper surface of the second electrode 142 and the lower end thereof is connected to the second region 142 a 2 .
- the second region 142 a 2 corresponds to a lower portion of the insertion hole 142 a according to the first example.
- the second region 142 a 2 has the second opening area Do in the vertical direction and is positioned beneath the first region 142 a 1 .
- the second region 142 a 2 has an upper end connected to the first region 142 a 1 and a lower end passing through the lower surface of the second electrode 142 .
- the insertion hole 142 a of the first example includes the first region 142 a 1 having the first height H 1 and the first opening area Di 1 and the second region 142 a 2 having the second height H 2 and the second opening area Do 1 , and the second height H 2 and the second opening area Do 1 are larger than the first height H 1 and the first opening area Di 1 . Accordingly, as the gas exiting the first hole as the first region 142 a 1 is diffused in the second hole as the second region 142 a 2 , the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer.
- the first height H 1 is preferably smaller than the second height H 2 .
- the first height H 1 is preferably smaller than the second height H 2 .
- FIG. 4 is an enlarged view illustrating a second example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 5 is an enlarged view of portion “D” of FIG. 4 .
- the second example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 4 and 5 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 2 and 3 in that each insertion hole 142 a has a tapered lower opening.
- the insertion hole 142 a of the second example may include a first region 142 a 1 having a first height H 1 , a second region 142 a 2 having a second height H 2 , and a fourth region 142 a 4 having a fourth height H 4 .
- the first region 142 a 1 corresponds to an upper portion of the insertion hole 142 a according to the second example.
- the first region 142 a 1 has a first opening area Di in the vertical direction and is positioned above the second region 142 a 2 .
- the first region 142 a 1 may be formed such that the upper end thereof passes through the upper surface of the second electrode 142 and the lower end thereof is connected to the second region 142 a 2 .
- the second region 142 a 2 is positioned beneath the first region 142 a 1 .
- the second region 142 a 2 may be formed such that the upper end thereof is connected to the lower portion of the first region 142 a 1 and the lower end thereof is connected to the fourth region 142 a 4 .
- the second region 142 a 2 has a second opening area Do at both of the upper and lower ends thereof in the vertical direction.
- the fourth region 142 a 4 is positioned beneath the second region 142 a 2 .
- the fourth region 142 a 4 has a second opening area Do 1 at the upper end thereof and a third opening area Dout 1 at the lower end thereof in the vertical direction.
- the upper end of the fourth region 142 a 4 is connected to the second region 142 a 2 , and the lower end of the fourth region 142 a 4 passes through the lower surface of the second electrode 142 .
- the first opening area Di 1 which is an upper opening area of the insertion hole 142 a
- the second opening area Do 2 which is an intermediate opening area of the insertion hole 142 a
- the third opening area Dout 1 which is a lower opening area of the insertion hole 142 a
- the gas exiting the first and second regions 142 a 1 and 142 a 2 is diffused in a larger amount in the fourth region 142 a 4 , compared to the first example of the present disclosure. Accordingly, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer.
- FIG. 6 is an enlarged view illustrating a third example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 7 is an enlarged view of portion “E” of FIG. 6 .
- the third example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 6 and 7 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 2 and 3 in that each insertion hole 142 a has a tapered intermediate portion.
- the insertion hole 142 a of the third example may include a first region 142 a 1 having a first height H 1 , a second region 142 a 2 having a second height H 2 , and a third region 142 a 3 having a third height H 3 .
- the first region 142 a 1 corresponds to an upper portion of the insertion hole 142 a according to the third example.
- the first region 142 a 1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of the second electrode 142 .
- the second region 142 a 2 corresponds to a lower portion of the insertion hole 142 a according to the third example.
- the second region 142 a 2 has a second opening area Do in the vertical direction and passes through the lower surface of the second electrode 142 .
- the third region 142 a 3 is positioned between the first region 142 a 1 and the second region 142 a 2 and may be tapered in the vertical direction.
- the third region 142 a 3 has a first opening area Di at the upper end thereof and a second opening area Do at the lower end thereof in the vertical direction.
- gas is diffused while entering the third region 142 a 3 from the first region 142 a 1 . Accordingly, the gas is additionally diffused while flowing along the third region 142 a 3 and the second region 142 a 2 at a reduced flow rate. Therefore, the insertion hole 142 a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving effects of further extending the residence time of the gas and further increasing a plasma density, as compared with the insertion hole 142 a according to the first example.
- FIG. 8 is an enlarged view illustrating a fourth example of portion “A” of FIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.
- the second electrode 142 has an upper surface parallel to the first electrode 141 and a dome-shaped lower surface recessed at the center thereof. Since the second electrode 142 has the dome-shaped lower surface so that the second height H 2 at the center of the second electrode 142 is lower than the second height H 2 at the edge of the second electrode 142 , the distance between the second electrode 142 and the substrate support 120 is decreased from the center toward the edge of the second electrode 142 .
- a plasma density is decreased at the center of the second electrode and is increased at the edge thereof.
- a plasma density is decreased at the center of the second electrode and is increased at the edge thereof.
- the lower surface of the second electrode 142 may have a stepped shape instead of the concave recessed dome shape.
- the lower surface at the center of the second electrode 142 and the lower surface at the edge of the second electrode 142 preferably have a height difference Hd of 5 mm to 10 mm.
- the substrate processing apparatus is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the electrode module including the first and second electrodes.
- FIG. 9 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.
- the substrate processing apparatus which is designated by reference numeral 900 , according to another embodiment of the present disclosure includes a process chamber 910 , a substrate support 920 , a chamber lid 930 , and a gas injection module 940 including a first injection plate 941 and a second injection plate 942 which face the substrate support.
- the process chamber 910 provides a reaction space 901 for processing a substrate(s).
- the bottom on one side of the process chamber 910 may communicate with an exhaust port (not shown) for exhausting gas from the reaction space 901 .
- the substrate support 920 is installed inside the process chamber 910 and supports a plurality of substrates S or a single large-area substrate S.
- the substrate support 920 is supported by a support shaft (not shown) passing through the central bottom of the process chamber 910 .
- the support shaft exposed out of the lower surface of the process chamber 910 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 910 .
- the substrate support 920 may be raised or lowered by a drive unit (not shown), and may also be rotated by driving the drive unit in some cases.
- the chamber lid 930 is installed to cover the upper portion of the process chamber 910 to seal the reaction space 901 .
- the chamber lid 930 supports the gas injection module 940 , which includes the first injection plate 941 to inject first gas and the second injection plate 942 to inject second gas, and the gas injection module 940 is inserted into and detachably coupled to the chamber lid 930 .
- the chamber lid 930 may be provided, on the upper surface thereof, with a first gas supply unit (not shown) and a second gas supply unit (not shown) to supply the first gas and the second gas to the gas injection module 940 within the process chamber 910 .
- the first gas supply unit (not shown) supplies reaction gas as the first gas to the gas injection module 940 through a first gas supply line 951 .
- the reaction gas refers to gas for plasma formation or for incidental reaction.
- the reaction gas may be comprised of hydrogen (H 2 ), nitrogen (N 2 ), oxygen (O 2 ), nitrogen dioxide (N 2 O), ammonia (NH 3 ), water (H 2 O), ozone (O 3 ), or the like.
- the second gas supply unit (not shown) supplies source gas as the second gas to the gas injection module 940 through a second gas supply line 952 .
- the source gas refers to gas containing a main component of a thin film to be formed.
- the source gas may be gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), or the like.
- a plasma power supply (not shown) for supply of plasma power may be installed outside the process chamber 910 .
- the first and second injection plates 941 and 941 of the gas injection module 940 may be detachably coupled to the upper portion of the process chamber so as to face the substrate support 920 .
- the first injection plate 941 injects the first gas into the reaction space
- the second injection plate 942 injects the second gas into the reaction space.
- the first injection plate 941 is installed in the process chamber and includes a plurality of protruding nozzles 941 a protruding toward the substrate(s) S.
- the respective protruding nozzles 941 a of the first injection plate 941 may be formed with a plurality of first gas injection holes 941 b so that the first gas supplied from the first gas supply unit (not shown) through the first gas supply line 951 may be injected to the substrate(s) S.
- the first gas may be injected to the substrate(s) S, or may be injected between the protruding nozzles 941 a and the first gas injection holes 941 b according to the length of each protruding nozzle 941 a.
- the first injection plate 941 may have a structure such as a polygonal flat plate or a circular plate.
- the protruding nozzles 941 a may be integral with or separated from the first injection plate 941 , and may be connected to the first injection plate 941 to have the same voltage as the first injection plate 941 .
- the second injection plate 942 may be formed with a plurality of second gas injection holes 942 a so that the second gas supplied through the second gas supply line 952 may be injected to the substrate(s) S.
- the second injection plate 942 may have a structure such as a polygonal flat plate or a circular plate.
- the second injection plate 942 may be installed in the process chamber and a have a plurality of second gas injection holes 942 a formed to allow the respective protruding nozzles 941 a to pass therethrough.
- FIG. 10 is an enlarged view illustrating a first example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 11 is an enlarged view of portion “C” of FIG. 10 .
- a first opening area Di 1 as the upper opening area of each second gas injection hole 942 a is different from a second opening area Do 1 as the lower opening area of the second gas injection hole 942 a.
- the first opening areas Di may be implemented differently for each region.
- the first opening areas Di in the substrate processing apparatus 900 may be implemented differently at a center of the second injection plate 942 , at a periphery of the center, and at an edge of the second injection plate 942 .
- the first opening area Di 1 at the center of the second injection plate 942 may be smaller than the first opening areas Di 2 , Di 3 , . . . at the periphery of the center of the second injection plate 942 and the first opening area Di n at the edge of the second injection plate 942 .
- the first opening areas Di increase from the center via the periphery toward the edge of the second injection plate 942 .
- the flow rate of gas is slower at the edge than at the center, thereby increasing the residence time of the gas in the reaction space and increasing a plasma density.
- Each first opening area Di 1 is an area of the associated second gas injection hole 942 a passing through the upper surface of the second injection plate 942
- each second opening area Do 1 is an area of the associated second gas injection hole 942 a passing through the lower surface of the second injection plate 942 .
- the second gas injection hole 942 a may include a first region 942 a 1 having a first height H 1 and a second region 942 a 2 having a second height H 2 in the direction of insertion of the protruding nozzle 941 a .
- the first region is a region corresponding to a first hole 942 a 1
- the second region is a region corresponding to a second hole 942 a 2 .
- the first region and the first hole will be designated by the same reference numeral, and the second region and the second hole will be designated by the same reference numeral.
- the first region 942 a 1 corresponds to an upper portion of the second gas injection hole 942 a .
- the first region 942 a 1 has the first opening area Di 1 in the vertical direction (Z-axis direction) and is positioned above the second region 942 a 2 .
- the first region 942 a 1 may be formed such that the upper end thereof passes through the upper surface of the second injection plate 942 and the lower end thereof is connected to the second region 942 a 2 .
- the second region 942 a 2 corresponds to a lower portion of the second gas injection hole 942 a .
- the second region 942 a 2 has the second opening area Do 2 in the vertical direction and is positioned beneath the first region 942 a 1 .
- the second region 942 a 1 has an upper end connected to the first region 942 a 1 and a lower end passing through the lower surface of the second injection plate 942 .
- the second gas injection hole 942 a includes the first region 942 a 1 having the first height H 1 and the first opening area Di 1 and the second region 942 a 2 having the second height H 2 and the second opening area Do 1 , and the second height H 2 and the second opening area Do 1 are larger than the first height H 1 and the first opening area Di 1 . Accordingly, as the gas exiting the first region 942 a 1 is diffused in the second region 942 a 2 , the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer.
- the first height H 1 is preferably smaller than the second height H 2 .
- the first height H 1 is preferably smaller than the second height H 2 .
- FIG. 12 is an enlarged view illustrating a second example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 13 is an enlarged view of portion “D” of FIG. 12 .
- the second example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 12 and 13 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 10 and 11 in that each second gas injection hole 942 a has a tapered lower opening.
- the second gas injection hole 942 a of the second example may include a first region 942 a 1 having a first height H 1 , a second region 942 a 2 having a second height H 2 , and a fourth region 942 a 4 having a fourth height H 4 .
- the first region 942 a 1 corresponds to an upper portion of the second gas injection hole 942 a according to the second example.
- the first region 942 a 1 has a first opening area Di in the vertical direction and is positioned above the second region 942 a 2 .
- the first region 942 a 1 may be formed such that the upper end thereof passes through the upper surface of the second injection plate 942 and the lower end thereof is connected to the second region 942 a 2 .
- the second region 942 a 2 is positioned beneath the first region 942 a 1 .
- the second region 942 a 2 may be formed such that the upper end thereof is connected to the lower portion of the first region 942 a 1 and the lower end thereof is connected to the fourth region 942 a 4 .
- the second region 942 a 2 has a second opening area Do at both of the upper and lower ends thereof in the vertical direction.
- the fourth region 942 a 4 is positioned beneath the second region 942 a 2 .
- the fourth region 942 a 4 has a second opening area Do 1 at the upper end thereof and a third opening area Dout 1 at the lower end thereof in the vertical direction.
- the upper end of the fourth region 942 a 4 is connected to the second region 942 a 2 , and the lower end of the fourth region 942 a 4 passes through the lower surface of the second injection plate 942 .
- the first opening area Di 1 which is an upper opening area of the second gas injection hole 942 a
- the second opening area Do 2 which is an intermediate opening area of the second gas injection hole 942 a
- the third opening area Dout 1 which is a lower opening area of the second gas injection hole 942 a
- the gas exiting the first and second regions 942 a 1 and 942 a 2 is diffused in a larger amount in the fourth region 942 a 4 , compared to the first example of the present disclosure. Accordingly, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer.
- FIG. 14 is an enlarged view illustrating a third example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- FIG. 15 is an enlarged view of portion “E” of FIG. 14 .
- the third example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 14 and 15 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in FIGS. 10 and 11 in that each second gas injection hole 942 a has a tapered intermediate portion.
- the second gas injection hole 942 a of the third example may include a first region 942 a 1 having a first height H 1 , a second region 942 a 2 having a second height H 2 , and a third region 942 a 3 having a third height H 3 .
- the first region 942 a 1 corresponds to an upper portion of the second gas injection hole 942 a according to the third example.
- the first region 942 a 1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of the second injection plate 942 .
- the second region 942 a 2 corresponds to a lower portion of the second gas injection hole 942 a according to the third example.
- the second region 942 a 2 has a second opening area Do in the vertical direction and passes through the lower surface of the second injection plate 942 .
- the third region 942 a 3 is positioned between the first region 942 a 1 and the second region 942 a 2 and may be tapered in the vertical direction.
- the third region 942 a 3 has a first opening area Di at the upper end thereof and a second opening area Do at the lower end thereof in the vertical direction.
- gas is diffused while entering the third region 942 a 3 from the first region 942 a 1 . Accordingly, the gas is additionally diffused while flowing along the third region 942 a 3 and the second region 942 a 2 at a reduced flow rate. Therefore, the second gas injection hole 942 a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving effects of further extending the residence time of the gas and further increasing a plasma density, as compared with the second gas injection hole 942 a according to the first example.
- FIG. 16 is an enlarged view illustrating a fourth example of portion “A” of FIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.
- the second injection plate 942 has an upper surface parallel to the first injection plate 941 and a dome-shaped lower surface recessed at the center thereof. Since the second injection plate 942 has the dome-shaped lower surface so that the second height H 2 at the center of the second injection plate 942 is lower than the second height H 2 at the edge of the second injection plate 942 , the distance between the second injection plate 942 and the substrate support 920 is decreased from the center toward the edge of the second injection plate 942 .
- a plasma density is decreased at the center of the second injection plate and is increased at the edge thereof.
- a plasma density is decreased at the center of the second injection plate and is increased at the edge thereof.
- the lower surface of the second injection plate 942 may have a stepped shape instead of the concave recessed dome shape.
- the lower surface at the center of the second injection plate 942 and the lower surface at the edge of the second injection plate 942 preferably have a height difference Hd of 5 mm to 10 mm.
- the substrate processing apparatus is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.
- the substrate processing apparatus is configured such that the second electrode as the lower electrode has the insertion hole through which gas is supplied, the opening area of the inlet of the insertion hole is gradually increased from the center toward the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous in that the flow rate of gas is reduced from the center toward the edge of the second electrode and the residence time of the gas is thus increased, thereby extending the time required for film formation.
- the substrate processing apparatus is configured such that the second electrode has the concave dome-shaped lower surface and the distance between the second electrode and the substrate is shorter at the center than at the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous in that the plasma density is decreased at the center of the second electrode and is increased at the edge thereof.
- the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by increasing the flow rate and residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the electrode module.
- the substrate processing apparatus is configured such that the second gas injection hole, into which the protruding nozzle of the first injection plate is inserted, is formed to inject second gas, the opening area of the inlet of the gas injection hole is gradually increased from the center toward the edge of the second injection plate. Therefore, the substrate processing apparatus is advantageous in that the flow rate of the gas exiting the first and second injection plates is reduced from the center toward the edge of the second injection plate and the residence time of the gas is thus increased, thereby extending the time required for film formation.
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Abstract
Disclosed herein is a substrate processing apparatus capable of adjusting positions of first and second electrodes in advance in consideration of the difference in thermal expansion in order to prevent a short-circuit from occurring due to the contact between the first and second electrodes even if the first and second electrodes are thermally expanded during the process. The substrate processing apparatus is advantageous in that it can prevent the short-circuit between the first and second electrodes even if the first and second electrodes are thermally expanded due to the increase in temperature during the process and can maintain the uniformity of a thin film in the large-area substrate processing apparatus.
Description
- The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions.
- In general, thin film layers, thin film circuit patterns, and/or optical patterns are required to be formed on a substrate in order to manufacture semiconductor devices, flat panel displays, solar cells, or the like. To this end, processes, such as a deposition process of depositing on a substrate a thin film made of a specific material, a photo process of selectively exposing the thin film by means of a photosensitive material, and an etching process of selectively removing an exposed portion of the thin film to form a pattern, are performed on the substrate.
- The processes of processing the substrate are performed by a substrate processing apparatus. A conventional substrate processing apparatus includes a chamber for processing a substrate, a substrate support for supporting the substrate, and an electrode unit disposed above the substrate support. The conventional substrate processing apparatus performs the processing of the substrate by supplying gas to the substrate through the electrode unit.
- On the other hand, the conventional substrate processing apparatus includes a lower electrode with gas inlet and outlet surfaces having a flat shape thereon, and an upper electrode with gas supply passages, the diameters of which are equal in size, at the center and outer portions thereof.
- For this reason, the conventional substrate processing apparatus does not take into account the flow rate and residence time of gas and the difference between plasma densities at the center and outer portions of the upper electrode in the process of supplying the gas through the lower electrode, which leads to deterioration in processing efficiency of the substrate. In addition, it is difficult to form a uniform thin film on the substrate in the large-area substrate processing apparatus.
- Various embodiments are directed to a substrate processing apparatus configured such that a second electrode as a lower electrode has an insertion hole through which gas is supplied, an opening area of an inlet of the insertion hole is gradually increased from the center toward the edge of the second electrode, and the second electrode has a concave dome-shaped lower surface. Accordingly, the substrate processing apparatus can increase a residence time of gas by reducing a flow rate of the gas at the edge rather than the center of the second electrode, form a uniform thin film by increasing a plasma density, and enhance efficiency in a substrate processing process.
- In an embodiment, there is provided a substrate processing apparatus that includes a process chamber configured to provide a reaction space for processing a substrate, a substrate support configured to support the substrate, a first electrode installed in the process chamber to face the substrate and having a plurality of protruding electrodes protruding toward the substrate, and a second electrode positioned beneath the first electrode and having a plurality of insertion holes into which the respective protruding electrodes are inserted. Each of the insertion holes of the second electrode includes a first hole at its upper portion, an associated one of the protruding electrodes being inserted into the first hole, and a second hole at its lower portion facing the upper portion. The first hole has a first opening, and the second hole has a second opening. An area of the first opening at a center of the second electrode is different from an area of the first opening at an edge of the second electrode.
- In another embodiment, there is provided a substrate processing apparatus that includes a process chamber configured to provide a reaction space for processing a substrate, a substrate support configured to support the substrate, a first injection plate installed in the process chamber to face the substrate, and having a first gas injection hole therein and a plurality of protruding nozzles protruding toward the substrate, and a second injection plate positioned beneath the first injection plate, and having a plurality of second gas injection holes into which the respective protruding nozzles are inserted and through which second gas is injected. Each of the second gas injection holes of the second injection plate includes a first hole at its upper portion, an associated one of the protruding nozzles being inserted into the first hole, and a second hole at its lower portion facing the upper portion. The first hole has a first opening, and the second hole has a second opening. An area of the first opening at a center of the second injection plate is different from an area of the first opening at an edge of the second injection plate.
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FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure. -
FIG. 2 is an enlarged view illustrating a first example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 3 is an enlarged view of portion “C” ofFIG. 2 . -
FIG. 4 is an enlarged view illustrating a second example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 5 is an enlarged view of portion “D” ofFIG. 4 . -
FIG. 6 is an enlarged view illustrating a third example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 7 is an enlarged view of portion “E” ofFIG. 6 . -
FIG. 8 is an enlarged view illustrating a fourth example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 9 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present disclosure. -
FIG. 10 is an enlarged view illustrating a first example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 11 is an enlarged view of portion “C” ofFIG. 10 . -
FIG. 12 is an enlarged view illustrating a second example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 13 is an enlarged view of portion “D” ofFIG. 12 . -
FIG. 14 is an enlarged view illustrating a third example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure. -
FIG. 15 is an enlarged view of portion “E” ofFIG. 14 . -
FIG. 16 is an enlarged view illustrating a fourth example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure. - Exemplary embodiments will be described below in more detail with reference to the accompanying drawings. The disclosure may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the disclosure.
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FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure. - As illustrated in
FIG. 1 , the substrate processing apparatus, which is designated byreference numeral 100, according to the embodiment of the present disclosure includes aprocess chamber 110, asubstrate support 120, achamber lid 130, and anelectrode module 140 including afirst electrode 141 and asecond electrode 142 which face the substrate support. - The
process chamber 110 provides areaction space 101 for processing a substrate(s). The bottom on one side of theprocess chamber 110 may communicate with an exhaust port (not shown) for exhausting gas from thereaction space 101. - The
substrate support 120 is installed inside theprocess chamber 110 and supports a plurality of substrates S or a single large-area substrate S. Thesubstrate support 120 is supported by a support shaft (not shown) passing through the central bottom of theprocess chamber 110. The support shaft exposed out of the lower surface of theprocess chamber 110 is sealed by a bellows (not shown) installed on the lower surface of theprocess chamber 110. Thesubstrate support 120 may be raised or lowered by a drive unit (not shown), and may also be rotated by driving the drive unit in some cases. - The
chamber lid 130 is installed to cover the upper portion of theprocess chamber 110 to seal thereaction space 101. Thechamber lid 130 supports theelectrode module 140, which includes thefirst electrode 141 as an upper electrode and thesecond electrode 142 as a lower electrode, and theelectrode module 140 is inserted into and detachably coupled to thechamber lid 130. - The
chamber lid 130 may be provided, on the upper surface thereof, with a first gas supply unit (not shown) and a second gas supply unit (not shown) to supply first gas and second gas to theelectrode module 140 within theprocess chamber 110. - The first gas supply unit (not shown) supplies reaction gas as the first gas to the
electrode module 140 through a firstgas supply line 151. The reaction gas refers to gas for plasma formation or for incidental reaction. For example, the reaction gas may be comprised of hydrogen (H2), nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), ammonia (NH3), water (H2O), ozone (O3), or the like. - The second gas supply unit (not shown) supplies source gas as the second gas to the
gas injection module 140 through a secondgas supply line 152. The source gas refers to gas containing a main component of a thin film to be formed. For example, the source gas may be gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), or the like. - A plasma power supply (not shown) for supply of plasma power may be installed outside the
process chamber 110. - The first and
second electrodes electrode module 140 may be detachably coupled to the upper portion of the process chamber so as to face thesubstrate support 120. - The
first electrode 141 may have a structure such as a polygonal flat plate or a circular plate. Thefirst electrode 141 may include a plurality of integral or separateprotruding electrodes 141 a, and the protrudingelectrodes 141 a may be connected to thefirst electrode 141 to have the same voltage as thefirst electrode 141. - The
second electrode 142 may have a structure such as a polygonal flat plate or a circular plate. Thesecond electrode 142 may be installed in the process chamber and a have a plurality ofinsertion holes 142 a formed to allow the respectiveprotruding electrodes 141 a to pass therethrough. -
FIG. 2 is an enlarged view illustrating a first example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 3 is an enlarged view of portion “C” ofFIG. 2 . - Referring to
FIGS. 2 and 3 , eachinsertion hole 142 a in the substrate processing apparatus according to the embodiment of the present disclosure includes afirst hole 142 a 1 at an upper portion thereof, an associated one of the protruding electrodes being inserted into thefirst hole 142 a 1, and asecond hole 142 a 2 at a lower portion thereof facing the upper portion. Thefirst hole 142 a 1 has a first opening, and thesecond hole 142 a 2 has a second opening. In this case, it can be seen that a first opening area Di as the opening area of the first opening is different from a second opening area Do as the opening area of the second opening. - Meanwhile, the first opening areas Di may be implemented differently for each region.
- That is, as illustrated in
FIG. 2 , the first opening areas Di in the substrate processing apparatus according to the embodiment of the present disclosure may be implemented differently at a center of thesecond electrode 142, at a periphery of the center, and at an edge of thesecond electrode 142. The firstopening area Di 1 at the center of thesecond electrode 142 may be smaller than the firstopening areas Di 2,Di 3, . . . at the periphery of the center of the second electrode and the first opening area Di n at the edge of the second electrode. - That is, the first opening areas Di increase from the center via the periphery toward the edge of the
second electrode 142. As such, by increasing the sizes of the first opening areas Di from the center toward the edge, the flow rate of gas is slower at the edge than at the center, thereby increasing the residence time of the gas in the reaction space and increasing a plasma density. - Each first opening area Di is an area of the associated
insertion hole 142 a passing through the upper surface of thesecond electrode 142, and each second opening area Do is an area of the associatedinsertion hole 142 a passing through the lower surface of thesecond electrode 142. - Meanwhile, in the substrate processing apparatus according to the embodiment of the present disclosure, the
insertion hole 142 a of the first example may include a first region having a first height H1 and the first opening and a second region having a second height H2 and the second opening, which are directed from the upper portion toward the lower portion of the insertion hole in the direction of insertion of the protruding electrode. The first region is a region corresponding to thefirst hole 142 a 1, and the second region is a region corresponding to thesecond hole 142 a 2. The first region and the first hole will be designated by the same reference numeral, and the second region and the second hole will be designated by the same reference numeral. - The
first region 142 a 1 corresponds to an upper portion of theinsertion hole 142 a according to the first example. The first region has the first opening area Di in the vertical direction (Z-axis direction) and is positioned above thesecond region 142 a 2. Thefirst region 142 a 1 may be formed such that the upper end thereof passes through the upper surface of thesecond electrode 142 and the lower end thereof is connected to thesecond region 142 a 2. - The
second region 142 a 2 corresponds to a lower portion of theinsertion hole 142 a according to the first example. Thesecond region 142 a 2 has the second opening area Do in the vertical direction and is positioned beneath thefirst region 142 a 1. Thesecond region 142 a 2 has an upper end connected to thefirst region 142 a 1 and a lower end passing through the lower surface of thesecond electrode 142. - That is, in the substrate processing apparatus according to the embodiment of the present disclosure, the
insertion hole 142 a of the first example includes thefirst region 142 a 1 having the first height H1 and the firstopening area Di 1 and thesecond region 142 a 2 having the second height H2 and the second opening area Do 1, and the second height H2 and the second opening area Do 1 are larger than the first height H1 and the firstopening area Di 1. Accordingly, as the gas exiting the first hole as thefirst region 142 a 1 is diffused in the second hole as thesecond region 142 a 2, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer. - In this case, the first height H1 is preferably smaller than the second height H2. Thus, it is possible to obtain an effect of reducing the flow rate of the gas by increasing a region in which the gas exiting the
first region 142 a 1 is diffused. -
FIG. 4 is an enlarged view illustrating a second example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 5 is an enlarged view of portion “D” ofFIG. 4 . - The second example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in
FIGS. 4 and 5 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated inFIGS. 2 and 3 in that eachinsertion hole 142 a has a tapered lower opening. - In the substrate processing apparatus according to the embodiment of the present disclosure, the
insertion hole 142 a of the second example may include afirst region 142 a 1 having a first height H1, asecond region 142 a 2 having a second height H2, and afourth region 142 a 4 having a fourth height H4. - The
first region 142 a 1 corresponds to an upper portion of theinsertion hole 142 a according to the second example. Thefirst region 142 a 1 has a first opening area Di in the vertical direction and is positioned above thesecond region 142 a 2. Thefirst region 142 a 1 may be formed such that the upper end thereof passes through the upper surface of thesecond electrode 142 and the lower end thereof is connected to thesecond region 142 a 2. - The
second region 142 a 2 is positioned beneath thefirst region 142 a 1. Thesecond region 142 a 2 may be formed such that the upper end thereof is connected to the lower portion of thefirst region 142 a 1 and the lower end thereof is connected to thefourth region 142 a 4. Thesecond region 142 a 2 has a second opening area Do at both of the upper and lower ends thereof in the vertical direction. - The
fourth region 142 a 4 is positioned beneath thesecond region 142 a 2. Thefourth region 142 a 4 has a second opening area Do 1 at the upper end thereof and a thirdopening area Dout 1 at the lower end thereof in the vertical direction. The upper end of thefourth region 142 a 4 is connected to thesecond region 142 a 2, and the lower end of thefourth region 142 a 4 passes through the lower surface of thesecond electrode 142. - As illustrated in
FIG. 5 , in the second example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that the firstopening area Di 1, which is an upper opening area of theinsertion hole 142 a, the second opening area Do 2, which is an intermediate opening area of theinsertion hole 142 a, and the thirdopening area Dout 1, which is a lower opening area of theinsertion hole 142 a, are different from each other. - When the third
opening area Dout 1 is larger than the second opening area Do 1, the gas exiting the first andsecond regions 142 a 1 and 142 a 2 is diffused in a larger amount in thefourth region 142 a 4, compared to the first example of the present disclosure. Accordingly, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer. -
FIG. 6 is an enlarged view illustrating a third example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 7 is an enlarged view of portion “E” ofFIG. 6 . - The third example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in
FIGS. 6 and 7 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated inFIGS. 2 and 3 in that eachinsertion hole 142 a has a tapered intermediate portion. - In the substrate processing apparatus according to the embodiment of the present disclosure, the
insertion hole 142 a of the third example may include afirst region 142 a 1 having a first height H1, asecond region 142 a 2 having a second height H2, and athird region 142 a 3 having a third height H3. - The
first region 142 a 1 corresponds to an upper portion of theinsertion hole 142 a according to the third example. Thefirst region 142 a 1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of thesecond electrode 142. - The
second region 142 a 2 corresponds to a lower portion of theinsertion hole 142 a according to the third example. Thesecond region 142 a 2 has a second opening area Do in the vertical direction and passes through the lower surface of thesecond electrode 142. - The
third region 142 a 3 is positioned between thefirst region 142 a 1 and thesecond region 142 a 2 and may be tapered in the vertical direction. Thethird region 142 a 3 has a first opening area Di at the upper end thereof and a second opening area Do at the lower end thereof in the vertical direction. - In the third example of the substrate processing apparatus according to the embodiment of the present disclosure, due to the above structure, gas is diffused while entering the
third region 142 a 3 from thefirst region 142 a 1. Accordingly, the gas is additionally diffused while flowing along thethird region 142 a 3 and thesecond region 142 a 2 at a reduced flow rate. Therefore, theinsertion hole 142 a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving effects of further extending the residence time of the gas and further increasing a plasma density, as compared with theinsertion hole 142 a according to the first example. -
FIG. 8 is an enlarged view illustrating a fourth example of portion “A” ofFIG. 1 in the substrate processing apparatus according to the embodiment of the present disclosure. - Referring to
FIG. 8 , in the fourth example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that thesecond electrode 142 has an upper surface parallel to thefirst electrode 141 and a dome-shaped lower surface recessed at the center thereof. Since thesecond electrode 142 has the dome-shaped lower surface so that the second height H2 at the center of thesecond electrode 142 is lower than the second height H2 at the edge of thesecond electrode 142, the distance between thesecond electrode 142 and thesubstrate support 120 is decreased from the center toward the edge of thesecond electrode 142. - Accordingly, a plasma density is decreased at the center of the second electrode and is increased at the edge thereof. As a result, it is possible to form a uniform thin film on the substrate in the large-area substrate processing apparatus.
- Alternatively, the lower surface of the
second electrode 142 may have a stepped shape instead of the concave recessed dome shape. In this case, the lower surface at the center of thesecond electrode 142 and the lower surface at the edge of thesecond electrode 142 preferably have a height difference Hd of 5 mm to 10 mm. - As described above, the substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the electrode module including the first and second electrodes.
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FIG. 9 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present disclosure. - As illustrated in
FIG. 9 , the substrate processing apparatus, which is designated byreference numeral 900, according to another embodiment of the present disclosure includes aprocess chamber 910, asubstrate support 920, achamber lid 930, and agas injection module 940 including afirst injection plate 941 and asecond injection plate 942 which face the substrate support. - The
process chamber 910 provides areaction space 901 for processing a substrate(s). The bottom on one side of theprocess chamber 910 may communicate with an exhaust port (not shown) for exhausting gas from thereaction space 901. - The
substrate support 920 is installed inside theprocess chamber 910 and supports a plurality of substrates S or a single large-area substrate S. Thesubstrate support 920 is supported by a support shaft (not shown) passing through the central bottom of theprocess chamber 910. The support shaft exposed out of the lower surface of theprocess chamber 910 is sealed by a bellows (not shown) installed on the lower surface of theprocess chamber 910. Thesubstrate support 920 may be raised or lowered by a drive unit (not shown), and may also be rotated by driving the drive unit in some cases. - The
chamber lid 930 is installed to cover the upper portion of theprocess chamber 910 to seal thereaction space 901. Thechamber lid 930 supports thegas injection module 940, which includes thefirst injection plate 941 to inject first gas and thesecond injection plate 942 to inject second gas, and thegas injection module 940 is inserted into and detachably coupled to thechamber lid 930. - The
chamber lid 930 may be provided, on the upper surface thereof, with a first gas supply unit (not shown) and a second gas supply unit (not shown) to supply the first gas and the second gas to thegas injection module 940 within theprocess chamber 910. - The first gas supply unit (not shown) supplies reaction gas as the first gas to the
gas injection module 940 through a firstgas supply line 951. The reaction gas refers to gas for plasma formation or for incidental reaction. For example, the reaction gas may be comprised of hydrogen (H2), nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), ammonia (NH3), water (H2O), ozone (O3), or the like. - The second gas supply unit (not shown) supplies source gas as the second gas to the
gas injection module 940 through a secondgas supply line 952. The source gas refers to gas containing a main component of a thin film to be formed. For example, the source gas may be gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), or the like. - A plasma power supply (not shown) for supply of plasma power may be installed outside the
process chamber 910. - The first and
second injection plates gas injection module 940 may be detachably coupled to the upper portion of the process chamber so as to face thesubstrate support 920. - The
first injection plate 941 injects the first gas into the reaction space, and thesecond injection plate 942 injects the second gas into the reaction space. - The
first injection plate 941 is installed in the process chamber and includes a plurality of protrudingnozzles 941 a protruding toward the substrate(s) S. - The respective protruding
nozzles 941 a of thefirst injection plate 941 may be formed with a plurality of first gas injection holes 941 b so that the first gas supplied from the first gas supply unit (not shown) through the firstgas supply line 951 may be injected to the substrate(s) S. - In this case, the first gas may be injected to the substrate(s) S, or may be injected between the protruding
nozzles 941 a and the first gas injection holes 941 b according to the length of each protrudingnozzle 941 a. - The
first injection plate 941 may have a structure such as a polygonal flat plate or a circular plate. The protrudingnozzles 941 a may be integral with or separated from thefirst injection plate 941, and may be connected to thefirst injection plate 941 to have the same voltage as thefirst injection plate 941. - The
second injection plate 942 may be formed with a plurality of second gas injection holes 942 a so that the second gas supplied through the secondgas supply line 952 may be injected to the substrate(s) S. - The
second injection plate 942 may have a structure such as a polygonal flat plate or a circular plate. Thesecond injection plate 942 may be installed in the process chamber and a have a plurality of second gas injection holes 942 a formed to allow the respective protrudingnozzles 941 a to pass therethrough. -
FIG. 10 is an enlarged view illustrating a first example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 11 is an enlarged view of portion “C” ofFIG. 10 . - Referring to
FIGS. 10 and 11 , in thesubstrate processing apparatus 900 according to the embodiment of the present disclosure, it can be seen that a firstopening area Di 1 as the upper opening area of each secondgas injection hole 942 a is different from a second opening area Do 1 as the lower opening area of the secondgas injection hole 942 a. - Meanwhile, the first opening areas Di may be implemented differently for each region.
- That is, as illustrated in
FIG. 10 , the first opening areas Di in thesubstrate processing apparatus 900 according to the embodiment of the present disclosure may be implemented differently at a center of thesecond injection plate 942, at a periphery of the center, and at an edge of thesecond injection plate 942. The firstopening area Di 1 at the center of thesecond injection plate 942 may be smaller than the firstopening areas Di 2,Di 3, . . . at the periphery of the center of thesecond injection plate 942 and the first opening area Di n at the edge of thesecond injection plate 942. - That is, the first opening areas Di increase from the center via the periphery toward the edge of the
second injection plate 942. As such, by increasing the sizes of the first opening areas Di from the center toward the edge, the flow rate of gas is slower at the edge than at the center, thereby increasing the residence time of the gas in the reaction space and increasing a plasma density. - Each first
opening area Di 1 is an area of the associated secondgas injection hole 942 a passing through the upper surface of thesecond injection plate 942, and each second opening area Do 1 is an area of the associated secondgas injection hole 942 a passing through the lower surface of thesecond injection plate 942. - In the substrate processing apparatus according to the embodiment of the present disclosure, the second
gas injection hole 942 a may include afirst region 942 a 1 having a first height H1 and asecond region 942 a 2 having a second height H2 in the direction of insertion of the protrudingnozzle 941 a. The first region is a region corresponding to afirst hole 942 a 1, and the second region is a region corresponding to asecond hole 942 a 2. The first region and the first hole will be designated by the same reference numeral, and the second region and the second hole will be designated by the same reference numeral. - The
first region 942 a 1 corresponds to an upper portion of the secondgas injection hole 942 a. Thefirst region 942 a 1 has the firstopening area Di 1 in the vertical direction (Z-axis direction) and is positioned above thesecond region 942 a 2. Thefirst region 942 a 1 may be formed such that the upper end thereof passes through the upper surface of thesecond injection plate 942 and the lower end thereof is connected to thesecond region 942 a 2. - The
second region 942 a 2 corresponds to a lower portion of the secondgas injection hole 942 a. Thesecond region 942 a 2 has the second opening area Do 2 in the vertical direction and is positioned beneath thefirst region 942 a 1. Thesecond region 942 a 1 has an upper end connected to thefirst region 942 a 1 and a lower end passing through the lower surface of thesecond injection plate 942. - That is, in the substrate processing apparatus according to the embodiment of the present disclosure, the second
gas injection hole 942 a includes thefirst region 942 a 1 having the first height H1 and the firstopening area Di 1 and thesecond region 942 a 2 having the second height H2 and the second opening area Do 1, and the second height H2 and the second opening area Do 1 are larger than the first height H1 and the firstopening area Di 1. Accordingly, as the gas exiting thefirst region 942 a 1 is diffused in thesecond region 942 a 2, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer. - In this case, the first height H1 is preferably smaller than the second height H2. Thus, it is possible to obtain an effect of reducing the flow rate of the gas by increasing a region in which the gas exiting the
first region 942 a 1 is diffused. -
FIG. 12 is an enlarged view illustrating a second example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 13 is an enlarged view of portion “D” ofFIG. 12 . - The second example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in
FIGS. 12 and 13 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated inFIGS. 10 and 11 in that each secondgas injection hole 942 a has a tapered lower opening. - In the substrate processing apparatus according to the embodiment of the present disclosure, the second
gas injection hole 942 a of the second example may include afirst region 942 a 1 having a first height H1, asecond region 942 a 2 having a second height H2, and afourth region 942 a 4 having a fourth height H4. - The
first region 942 a 1 corresponds to an upper portion of the secondgas injection hole 942 a according to the second example. Thefirst region 942 a 1 has a first opening area Di in the vertical direction and is positioned above thesecond region 942 a 2. Thefirst region 942 a 1 may be formed such that the upper end thereof passes through the upper surface of thesecond injection plate 942 and the lower end thereof is connected to thesecond region 942 a 2. - The
second region 942 a 2 is positioned beneath thefirst region 942 a 1. Thesecond region 942 a 2 may be formed such that the upper end thereof is connected to the lower portion of thefirst region 942 a 1 and the lower end thereof is connected to thefourth region 942 a 4. Thesecond region 942 a 2 has a second opening area Do at both of the upper and lower ends thereof in the vertical direction. - The
fourth region 942 a 4 is positioned beneath thesecond region 942 a 2. Thefourth region 942 a 4 has a second opening area Do 1 at the upper end thereof and a thirdopening area Dout 1 at the lower end thereof in the vertical direction. The upper end of thefourth region 942 a 4 is connected to thesecond region 942 a 2, and the lower end of thefourth region 942 a 4 passes through the lower surface of thesecond injection plate 942. - As illustrated in
FIG. 13 , in the second example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that the firstopening area Di 1, which is an upper opening area of the secondgas injection hole 942 a, the second opening area Do 2, which is an intermediate opening area of the secondgas injection hole 942 a, and the thirdopening area Dout 1, which is a lower opening area of the secondgas injection hole 942 a, are different from each other. - When the third
opening area Dout 1 is larger than the second opening area Do 1, the gas exiting the first andsecond regions 942 a 1 and 942 a 2 is diffused in a larger amount in thefourth region 942 a 4, compared to the first example of the present disclosure. Accordingly, the flow rate of the gas is reduced and the residence time of the gas in the reaction space is thus longer. -
FIG. 14 is an enlarged view illustrating a third example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure.FIG. 15 is an enlarged view of portion “E” ofFIG. 14 . - The third example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated in
FIGS. 14 and 15 differs from the first example of the substrate processing apparatus according to the embodiment of the present disclosure illustrated inFIGS. 10 and 11 in that each secondgas injection hole 942 a has a tapered intermediate portion. - In the substrate processing apparatus according to the embodiment of the present disclosure, the second
gas injection hole 942 a of the third example may include afirst region 942 a 1 having a first height H1, asecond region 942 a 2 having a second height H2, and athird region 942 a 3 having a third height H3. - The
first region 942 a 1 corresponds to an upper portion of the secondgas injection hole 942 a according to the third example. Thefirst region 942 a 1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of thesecond injection plate 942. - The
second region 942 a 2 corresponds to a lower portion of the secondgas injection hole 942 a according to the third example. Thesecond region 942 a 2 has a second opening area Do in the vertical direction and passes through the lower surface of thesecond injection plate 942. - The
third region 942 a 3 is positioned between thefirst region 942 a 1 and thesecond region 942 a 2 and may be tapered in the vertical direction. Thethird region 942 a 3 has a first opening area Di at the upper end thereof and a second opening area Do at the lower end thereof in the vertical direction. - In the third example of the substrate processing apparatus according to the embodiment of the present disclosure, due to the above structure, gas is diffused while entering the
third region 942 a 3 from thefirst region 942 a 1. Accordingly, the gas is additionally diffused while flowing along thethird region 942 a 3 and thesecond region 942 a 2 at a reduced flow rate. Therefore, the secondgas injection hole 942 a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving effects of further extending the residence time of the gas and further increasing a plasma density, as compared with the secondgas injection hole 942 a according to the first example. -
FIG. 16 is an enlarged view illustrating a fourth example of portion “A” ofFIG. 9 in the substrate processing apparatus according to the embodiment of the present disclosure. - Referring to
FIG. 16 , in the fourth example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that thesecond injection plate 942 has an upper surface parallel to thefirst injection plate 941 and a dome-shaped lower surface recessed at the center thereof. Since thesecond injection plate 942 has the dome-shaped lower surface so that the second height H2 at the center of thesecond injection plate 942 is lower than the second height H2 at the edge of thesecond injection plate 942, the distance between thesecond injection plate 942 and thesubstrate support 920 is decreased from the center toward the edge of thesecond injection plate 942. - Accordingly, a plasma density is decreased at the center of the second injection plate and is increased at the edge thereof. As a result, it is possible to form a uniform thin film on the substrate in the large-area substrate processing apparatus.
- Alternatively, the lower surface of the
second injection plate 942 may have a stepped shape instead of the concave recessed dome shape. In this case, the lower surface at the center of thesecond injection plate 942 and the lower surface at the edge of thesecond injection plate 942 preferably have a height difference Hd of 5 mm to 10 mm. - As described above, the substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.
- As apparent from the above description, the substrate processing apparatus according to the present disclosure is configured such that the second electrode as the lower electrode has the insertion hole through which gas is supplied, the opening area of the inlet of the insertion hole is gradually increased from the center toward the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous in that the flow rate of gas is reduced from the center toward the edge of the second electrode and the residence time of the gas is thus increased, thereby extending the time required for film formation.
- In addition, the substrate processing apparatus according to the present disclosure is configured such that the second electrode has the concave dome-shaped lower surface and the distance between the second electrode and the substrate is shorter at the center than at the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous in that the plasma density is decreased at the center of the second electrode and is increased at the edge thereof.
- In general, the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by increasing the flow rate and residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the electrode module.
- Furthermore, the substrate processing apparatus according to the present disclosure is configured such that the second gas injection hole, into which the protruding nozzle of the first injection plate is inserted, is formed to inject second gas, the opening area of the inlet of the gas injection hole is gradually increased from the center toward the edge of the second injection plate. Therefore, the substrate processing apparatus is advantageous in that the flow rate of the gas exiting the first and second injection plates is reduced from the center toward the edge of the second injection plate and the residence time of the gas is thus increased, thereby extending the time required for film formation.
- While various embodiments have been described above, it will be understood to those skilled in the art that the embodiments described are by way of example only. Accordingly, the disclosure described herein should not be limited based on the described embodiments.
Claims (16)
1. A substrate processing apparatus comprising:
a process chamber configured to provide a reaction space for processing a substrate;
a substrate support configured to support the substrate;
a first electrode installed in the process chamber to face the substrate and having a plurality of protruding electrodes protruding toward the substrate; and
a second electrode positioned beneath the first electrode and having a plurality of insertion holes into which the respective protruding electrodes are inserted, wherein:
each of the insertion holes of the second electrode comprises a first hole at its upper portion, an associated one of the protruding electrodes being inserted into the first hole, and a second hole at its lower portion facing the upper portion;
the first hole has a first opening, and the second hole has a second opening; and
an area of the first opening at a center of the second electrode is different from an area of the first opening at an edge of the second electrode.
2. The substrate processing apparatus according to claim 1 , wherein the first hole is configured such that the area of the first opening at the center of the second electrode is smaller than the area of the first opening at the edge of the second electrode.
3. The substrate processing apparatus according to claim 1 , wherein the first hole is configured such that the area of the first opening is increased from the center toward the edge of the second electrode.
4. The substrate processing apparatus according to claim 1 , wherein the insertion hole comprises:
a first region having a first height and the first opening toward the lower portion from the upper portion of the insertion hole; and
a second region positioned beneath the first region and having a second height and the second opening.
5. The substrate processing apparatus according to claim 4 , wherein the area of the first opening is smaller than or equal to an area of the second opening.
6. The substrate processing apparatus according to claim 4 , wherein:
the insertion hole comprises a third region having a third height between the first region and the second region; and
the third region is tapered.
7. The substrate processing apparatus according to claim 4 , wherein the second height at the center of the second electrode is lower than the second height at the edge of the second electrode.
8. The substrate processing apparatus according to claim 4 , wherein:
the insertion hole comprises a fourth region having a fourth height and a third opening beneath the second region; and
an area of the third opening is equal to or larger than an area of the second opening.
9. A substrate processing apparatus comprising:
a process chamber configured to provide a reaction space for processing a substrate;
a substrate support configured to support the substrate;
a first injection plate installed in the process chamber to face the substrate, and having a first gas injection hole therein and a plurality of protruding nozzles protruding toward the substrate; and
a second injection plate positioned beneath the first injection plate, and having a plurality of second gas injection holes into which the respective protruding nozzles are inserted and through which second gas is injected, wherein:
each of the second gas injection holes of the second injection plate comprises a first hole at its upper portion, an associated one of the protruding nozzles being inserted into the first hole, and a second hole at its lower portion facing the upper portion;
the first hole has a first opening, and the second hole has a second opening; and
an area of the first opening at a center of the second injection plate is different from an area of the first opening at an edge of the second injection plate.
10. The substrate processing apparatus according to claim 9 , wherein the first hole is configured such that the area of the first opening at the center of the second injection plate is smaller than the area of the first opening at the edge of the second injection plate.
11. The substrate processing apparatus according to claim 9 , wherein the first hole is configured such that the area of the first opening is increased from the center toward the edge of the second injection plate.
12. The substrate processing apparatus according to claim 9 , wherein the second gas injection hole comprises:
a first region having a first height and the first opening toward the lower portion from the upper portion of the second gas injection hole; and
a second region positioned beneath the first region and having a second height and the second opening.
13. The substrate processing apparatus according to claim 12 , wherein the area of the first opening is smaller than or equal to an area of the second opening.
14. The substrate processing apparatus according to claim 12 , wherein:
the second gas injection hole comprises a third region having a third height between the first region and the second region; and
the third region is tapered.
15. The substrate processing apparatus according to claim 12 , wherein the second height at the center of the second injection plate is lower than the second height at the edge of the second injection plate.
16. The substrate processing apparatus according to claim 12 , wherein:
the second gas injection hole comprises a fourth region having a fourth height and a third opening beneath the second region; and
an area of the third opening is equal to or larger than an area of the second opening.
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KR10-2019-0083462 | 2019-07-10 | ||
PCT/KR2020/009047 WO2021006676A1 (en) | 2019-07-10 | 2020-07-09 | Substrate processing apparatus |
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US20080302303A1 (en) * | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
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WO2010024814A1 (en) * | 2008-08-28 | 2010-03-04 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
KR101585891B1 (en) * | 2009-05-06 | 2016-01-15 | 위순임 | Compound plasma reactor |
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TW202111151A (en) | 2021-03-16 |
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