US20210134609A1 - Method for producing insulating circuit substrate with heat sink - Google Patents
Method for producing insulating circuit substrate with heat sink Download PDFInfo
- Publication number
- US20210134609A1 US20210134609A1 US16/488,634 US201816488634A US2021134609A1 US 20210134609 A1 US20210134609 A1 US 20210134609A1 US 201816488634 A US201816488634 A US 201816488634A US 2021134609 A1 US2021134609 A1 US 2021134609A1
- Authority
- US
- United States
- Prior art keywords
- aluminum
- heat sink
- layer
- bonding
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 209
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 239000000463 material Substances 0.000 claims abstract description 92
- 239000010949 copper Substances 0.000 claims abstract description 64
- 229910052802 copper Inorganic materials 0.000 claims abstract description 57
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 239000007790 solid phase Substances 0.000 claims abstract description 24
- 238000010030 laminating Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims description 39
- 229910000962 AlSiC Inorganic materials 0.000 claims description 31
- 238000007373 indentation Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005219 brazing Methods 0.000 description 21
- 235000019589 hardness Nutrition 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000005336 cracking Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004299 exfoliation Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910018566 Al—Si—Mg Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/128—The active component for bonding being silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/401—Cermets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Definitions
- the present invention relates to a method for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer that is formed on a first surface of an insulating layer and a metal layer that is formed on a second surface of the insulating layer, and the heat sink being bonded to the metal layer side of the insulating circuit substrate.
- a power module, a LED module, or a thermoelectric module has a structure in which a power semiconductor element, a LED element, or a thermoelectric element is bonded to an insulating circuit substrate in which a circuit layer formed of a conductive material is formed on a first surface of an insulating layer.
- PTL 1 discloses an insulating circuit substrate including a circuit layer and a metal layer that are formed on a first surface and a second surface of a ceramic substrate, respectively, using an aluminum plate or a copper plate.
- a heat sink is bonded to a second surface side of the insulating circuit substrate such that heat transmitted from a semiconductor element to the insulating circuit substrate side is dissipated to the outside via the heat sink.
- an aluminum alloy or an aluminum material such as aluminum-based composite material disclosed in PTL 2 in which a silicon carbide member represented by AlSiC is filled with aluminum or an aluminum alloy is widely used.
- the heat sink is formed of an aluminum alloy having a low solidus temperature, the heat sink can be formed in a shape having a relatively complex structure, and heat radiation can be improved.
- the heat sink is formed of an aluminum-based composite material in which a silicon carbide member is filled with aluminum or an aluminum alloy, the thermal expansion coefficient is close to that of the insulating circuit substrate such that a thermal strain during loading of a thermal cycle can be suppressed to be low.
- PTL 3 discloses a method of providing a bonding material formed of copper or a copper alloy between a metal layer and a heat sink formed of aluminum or an aluminum alloy and bonding the metal layer and the bonding material to each other and bonding the bonding material and the heat sink to each other by solid phase diffusion bonding.
- the metal layer is formed of a metal having a relatively low deformation resistance, for example, aluminum (4N aluminum) having a purity of 99.99 mass % or higher such that a thermal strain during loading of a thermal cycle is absorbed by deformation of the metal layer and cracking or the like of the insulating layer can be suppressed.
- a metal having a relatively low deformation resistance for example, aluminum (4N aluminum) having a purity of 99.99 mass % or higher such that a thermal strain during loading of a thermal cycle is absorbed by deformation of the metal layer and cracking or the like of the insulating layer can be suppressed.
- a bonding surface of the heat sink is formed of an aluminum alloy such as ADC12, and the metal layer and the bonding surface of the heat sink are bonded to each other by solid phase diffusion bonding using the method described in PTL 3, there is a large difference in solidus temperature between the metal layer and the bonding surface of the heat sink. Therefore, it is necessary that a temperature condition during solid phase diffusion bonding be lower than the solidus temperature of the aluminum alloy.
- the diffusion energy is high, and a diffusion phenomenon is not likely to occur. Therefore, solid phase diffusion between Al of the metal layer formed of 4N aluminum having a high solidus temperature and Cu of the bonding material is insufficient, and bonding reliability between the metal layer and the heat sink may deteriorate.
- An object of the present invention is to provide a method for producing an insulating circuit substrate with a heat sink in which a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature.
- a method for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer that is formed on a first surface of an insulating layer and a metal layer that is formed on a second surface of the insulating layer, and the heat sink being bonded to the metal layer side of the insulating circuit substrate.
- the metal layer is formed of aluminum or an aluminum alloy, and an indentation hardness of the metal layer is lower than 50 mgf/ ⁇ m 2 .
- a bonding surface of the heat sink with the insulating circuit substrate is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower.
- This production method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on a surface of the metal layer opposite to the insulating layer; and a heat sink bonding step of bonding the heat sink to the aluminum bonding layer by laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and a bonding surface of the heat sink and bonding the aluminum bonding layer and the copper bonding material to each other and bonding the copper bonding material and the heat sink to each other by solid phase diffusion bonding.
- Solid phase diffusion bonding refers to a method of diffusing atoms from a bonding material to a bonding surface while maintaining the bonding material to be in a solid phase state without entering a liquid phase state.
- a difference in solidus temperature between the aluminum or the aluminum alloy forming the aluminum bonding layer and the aluminum or the aluminum alloy forming the bonding surface of the heat sink can be made to be small, and even when solid phase diffusion bonding is performed under a relatively low-temperature condition, Al of the aluminum bonding layer and Cu of the copper bonding material can be sufficiently diffused, Cu of the copper bonding material and Al of the bonding surface of the heat sink can be sufficiently diffused, and the insulating circuit substrate and the heat sink can be reliably bonded to each other.
- the metal layer is formed of aluminum or an aluminum alloy, and an indentation hardness of the metal layer is lower than 50 mgf/ ⁇ m 2 . Therefore, during loading of a thermal cycle on the insulating circuit substrate with a heat sink, a thermal strain can be released by deforming the metal layer, and the cracking or the like of the insulating layer can be suppressed.
- the bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower. Therefore, a heat sink suitable for required performance can be configured.
- the indentation hardness is a value measured using a method according to ISO 14577.
- a ratio tb/ta of a thickness tb of the metal layer to a thickness ta of the aluminum bonding layer be in a range of 0.08 to 40.
- the ratio tb/ta of the thickness tb of the metal layer to the thickness ta of the aluminum bonding layer is 0.08 or higher. Therefore, the thickness of the metal layer formed of aluminum or an aluminum alloy can be secured, a thermal strain during loading of a thermal cycle can be absorbed by the metal layer, and the cracking or the like of the insulating layer can be suppressed.
- the ratio tb/ta of the thickness tb of the metal layer to the thickness to of the aluminum bonding layer is 40 or lower. Therefore, for example, when the metal layer and the aluminum bonding layer are brazed, a brazing material (liquid phase) erodes the aluminum bonding layer, and a grain boundary melts. As a result, unevenness is generated on a surface (a surface opposite to the metal layer) of the aluminum bonding layer, and voids derived from the generated unevenness are not formed between the aluminum bonding layer and the copper bonding material, and thus the aluminum bonding layer and the copper bonding material can be favorably bonded to each other.
- a total thickness of the metal layer and the aluminum bonding layer be 2.0 mm or less.
- the total thickness of the metal layer and the aluminum bonding layer is 2.0 mm or less. Therefore, the total thickness of the metal layer and the aluminum bonding layer interposed between the insulating layer and the heat sink is not larger than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured.
- a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature.
- FIG. 1 is a cross-sectional view illustrating a power module including an insulating circuit substrate with a heat sink produced according to an embodiment of the present invention.
- FIG. 2 is an enlarged cross-sectional view illustrating a bonded interface between a metal layer and a heat sink in the insulating circuit substrate with a heat sink illustrated in FIG. 1 .
- FIG. 3 is a cross-sectional view illustrating the heat sink used in the insulating circuit substrate with a heat sink illustrated in FIG. 1 .
- FIG. 4 is a flowchart illustrating an embodiment of a method for producing the insulating circuit substrate with a heat sink according to the present invention.
- FIG. 5 is a cross-sectional view illustrating the method for producing the insulating circuit substrate with a heat sink according to the embodiment of the present invention.
- FIG. 6 is a cross-sectional view illustrating the method for producing the insulating circuit substrate with a heat sink according to the embodiment of the present invention.
- FIG. 7 is a flowchart illustrating a method for producing an insulating circuit substrate with a heat sink according to another embodiment of the present invention.
- FIG. 8 is a cross-sectional view illustrating a method for producing an insulating circuit substrate with a heat sink according to another embodiment of the present invention.
- FIG. 1 illustrates an insulating circuit substrate with a heat sink 40 produced using a method for producing an insulating circuit substrate with a heat sink according to the embodiment of the present invention and a power module 1 in which the insulating circuit substrate with a heat sink 40 is used.
- the power module 1 illustrated in FIG. 1 includes: an insulating circuit substrate 10 ; a semiconductor element 3 that is bonded to a first surface (in FIG. 1 , an upper surface) of the insulating circuit substrate 10 via a solder layer 2 ; and a heat sink 41 that is bonded to a lower side of the insulating circuit substrate 10 .
- the insulating circuit substrate 10 to which the heat sink 41 is bonded is the insulating circuit substrate with a heat sink 40 according to the embodiment.
- the semiconductor element 3 is formed of a semiconductor material such as Si.
- the solder layer 2 that bonds the insulating circuit substrate 10 and the semiconductor element 3 to each other is not particularly limited and is preferably, for example, a Sn—Ag-based solder material, a Sn—Cu-based solder material, a Sn—In-based solder material, or a Sn—Ag—Cu-based solder material (so-called lead-free solder material).
- the insulating circuit substrate 10 includes: a ceramic substrate 11 that is an insulating layer; a circuit layer 12 that is provided on a first surface (in FIG. 1 , an upper surface) of the ceramic substrate 11 ; and a metal layer 13 that is provided on a second surface (in FIG. 1 , a lower surface) of the ceramic substrate 11 .
- Planar shapes of the circuit layer 12 , the ceramic substrate 11 , and the metal layer 13 may be a rectangular shape or the like as necessary.
- the dimension of the ceramic substrate 11 is larger than those of the circuit layer 12 and the metal layer 13 to obtain high insulating properties.
- the ceramic substrate 11 is not particularly limited as long as it prevents electrical connection between the circuit layer 12 and the metal layer 13 .
- the ceramic substrate 11 may be formed of aluminum nitride (AIN), silicon nitride (Si 3 N 4 ), or alumina (Al 2 O 3 ) having high insulating properties and is preferably aluminum nitride.
- the thickness of the ceramic substrate 11 is not particularly limited, is preferably set in a range of 0.2 mm to 1.5 mm, and is set as 0.635 mm in the embodiment.
- the circuit layer 12 is formed by bonding a metal plate having conductivity to the first surface of the ceramic substrate 11 .
- the circuit layer 12 is formed by bonding an aluminum plate 22 formed of aluminum or an aluminum alloy.
- the aluminum plate 22 forming the circuit layer 12 is not particularly limited, and a rolled plate of aluminum (2N aluminum) having a purity of 99 mass % or higher or an aluminum alloy such as A 3003 or A 6063 is preferably used.
- a circuit pattern is formed on the circuit layer 12 , and a first surface (in FIG. 1 , an upper surface) of the circuit layer 12 is a mounting surface on which the semiconductor element 3 is mounted.
- the thickness of the circuit layer 12 is not particularly limited, is preferably set in a range of 0.1 mm to 2.0 mm, and may be set as 0.4 mm
- the metal layer 13 is formed by bonding an aluminum plate 23 formed of aluminum or an aluminum alloy to the second surface of the ceramic substrate 11 .
- An indentation hardness of the metal layer 13 is lower than 50 mgf/ ⁇ m 2 .
- the indentation hardness is a value of the insulating circuit substrate with a heat sink 40 at 25° C. Specifically, the indentation hardness is a value measured using a method according to ISO 14577.
- aluminum plate 23 forming the metal layer 13 for example, aluminum (2N aluminum) having a purity of 99 mass % or higher, aluminum (3N aluminum) having a purity of 99.9 mass % or higher, or aluminum (4N aluminum) having a purity of 99.99 mass % or higher can be used.
- a thickness tb of the metal layer 13 is not particularly limited, is preferably set in a range of 0.1 mm to 2.0 mm, and may be set as, for example, 0.30 mm
- the heat sink 41 is provided to cool the insulating circuit substrate 10 and, as illustrated in FIG. 1 , is a heat radiation plate formed of a material having excellent thermal conductivity.
- the heat sink 41 is not particularly limited and is preferably formed of an Al—SiC composite material (so-called AlSiC) of a porous body formed of SiC and an aluminum material formed of aluminum or an aluminum alloy impregnated into the porous body.
- AlSiC Al—SiC composite material
- ADC12 solidus temperature: 570° C.
- a skin layer 43 formed of an aluminum material (in the embodiment, ADC12) impregnated into a porous body is formed on a surface of a heat sink main body 42 formed of AlSiC.
- the thickness of the heat sink main body 42 is not particularly limited and is preferably in a range of 0.5 mm to 5.0 mm.
- a thickness is of the skin layer 43 is preferably 0.01 times to 0.1 times of the thickness of the heat sink main body 42 .
- the metal layer 13 of the insulating circuit substrate 10 and the heat sink 41 are bonded to each other via an aluminum bonding layer 31 and a copper bonding layer 32 .
- the aluminum bonding layer 31 is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower, and is preferably formed of an A 3003 alloy (solidus temperature: 643° C.).
- a temperature difference between the solidus temperature of the aluminum bonding layer 31 and the solidus temperature of the aluminum alloy forming a bonding surface (in the embodiment, the skin layer 43 ) of the heat sink 41 is preferably in a range of 80° C. or lower.
- a thickness to of the aluminum bonding layer 31 is not particularly limited, is preferably set in a range of 0.03 mm to 1.5 mm, and may be set as 0.1 mm in the embodiment.
- a ratio tb/ta of the thickness tb of the metal layer 13 to the thickness to of the aluminum bonding layer 31 is not particularly limited and is preferably in a range of 0.08 to 40.
- the total thickness (ta+tb) of the metal layer 13 and the aluminum bonding layer 31 may be 2.0 mm or less. It is preferable that the metal layer 13 and the aluminum bonding layer 31 be bonded to each other by bonding using a brazing material or solid phase diffusion bonding.
- the copper bonding layer 32 is formed of copper or a copper alloy. In the embodiment, as illustrated in FIG. 6 , the copper bonding layer 32 is formed by bonding a copper plate 52 formed of a rolled plate of oxygen free copper. A thickness tc of the copper bonding layer 32 is not particularly limited and is preferably in a range of 0.05 mm to 5.0 mm The aluminum bonding layer 31 and the copper bonding layer 32 are bonded to each other and the copper bonding layer 32 and the heat sink 41 (skin layer 43 ) are bonded to each other by solid phase diffusion bonding.
- the aluminum plates 22 and 23 are laminated on the first surface and the second surface of the ceramic substrate 11 via brazing materials 26 and 27 .
- the brazing materials 26 and 27 an Al—Si-based brazing material or an Al—Si—Mg-based brazing material is preferably used.
- a clad material 51 that forms the aluminum bonding layer 31 is laminated on a second surface side (in FIG. 5 , a lower side) of the aluminum plate 23 that forms the metal layer 13 .
- the clad material 51 includes a main body layer 51 a formed of A 3003 alloy and a brazing material layer 51 b formed of A 4045 alloy, and the main body layer 51 a forms the aluminum bonding layer 31 .
- the clad material 51 is laminated such that the brazing material layer 51 b faces the aluminum plate 23 side that forms the metal layer 13 .
- the laminated body is heated.
- the ceramic substrate 11 and the aluminum plates 22 and 23 are bonded to each other to form the circuit layer 12 and the metal layer 13
- the metal layer 13 and the clad material 51 are bonded to each other to form the aluminum bonding Al—Si—Mg-based brazing material is preferably used.
- a clad material 51 that forms the aluminum bonding layer 31 is laminated on a second surface side (in FIG. 5 , a lower side) of the aluminum plate 23 that forms the metal layer 13 .
- the clad material 51 includes a main body layer 51 a formed of A 3003 alloy and a brazing material layer 51 b formed of A 4045 alloy, and the main body layer 51 a forms the aluminum bonding layer 31 . As illustrated in FIG. 5 , the clad material 51 is laminated such that the brazing material layer 51 b faces the aluminum plate 23 side that forms the metal layer 13 .
- the laminated body is heated.
- the ceramic substrate 11 and the aluminum plates 22 and 23 are bonded to each other to form the circuit layer 12 and the metal layer 13
- the metal layer 13 and the clad material 51 are bonded to each other to form the aluminum bonding layer 31 . That is, in the embodiment, the circuit layer and metal layer forming step S 01 and the aluminum bonding layer forming step S 02 are performed at once.
- Bonding conditions in the circuit layer and metal layer forming step S 01 and the aluminum bonding layer forming step S 02 are preferably set as follows: the atmosphere is a vacuum, the pressurization load is in a range of 0.1 MPa to 3.5 MPa, and the heating temperature is in a range of 560° C. to 630° C. As described above, the insulating circuit substrate 10 and the aluminum bonding layer 31 according to the embodiment are formed.
- the heat sink 41 is laminated on the second surface side (in FIG. 6 , a lower side) of the aluminum bonding layer 31 via the copper plate 52 as a copper bonding material formed of a rolled plate of oxygen free copper.
- the heat sink 41 is laminated such that the skin layer 43 faces the copper plate 52 side.
- the insulating circuit substrate 10 , the insulating circuit substrate 10 to which the aluminum bonding layer 31 is bonded, the copper plate 52 , and the heat sink 41 are pressurized in the laminating direction and heated.
- the aluminum bonding layer 31 and the copper plate 52 are bonded to each other and the copper plate 52 and the heat sink 41 (skin layer 43 ) are bonded to each other by solid phase diffusion bonding.
- a load in the laminating direction is preferably in a range of 6 kgf/cm2 to 35 kgf/cm2 (0.6 MPa to 3.5 MPa).
- the bonding temperature is in a range of 460° C. to 540° C. and preferably in a range of 480° C. to 520° C.
- the holding time is preferably in a range of 30 min to 240 min
- the insulating circuit substrate with a heat sink 40 according to the embodiment is produced.
- the semiconductor element 3 is laminated on the circuit layer 12 of the insulating circuit substrate with a heat sink 40 via a solder material, and the circuit layer 12 of the insulating circuit substrate with a heat sink 40 and the semiconductor element 3 are bonded to each other in a reducing furnace.
- the power module 1 illustrated in FIG. 1 is produced as described above.
- the above-described production method includes: the aluminum bonding layer forming step S 02 of forming the aluminum bonding layer 31 formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on a surface of the metal layer 13 opposite to the ceramic substrate 11 ; and the heat sink bonding step S 03 of bonding the heat sink 41 to the aluminum bonding layer by laminating the copper plate 52 formed of copper or a copper alloy between the aluminum bonding layer 31 and a bonding surface of the heat sink 41 and bonding the aluminum bonding layer 31 and the copper plate 52 to each other and bonding the copper plate 52 and the heat sink 41 to each other by solid phase diffusion bonding.
- the metal layer 13 is formed of aluminum or an aluminum alloy (in the embodiment, 4 N aluminum), and the indentation hardness of the metal layer 13 is lower than 50 mgf/um 2 . Therefore, during loading of a thermal cycle on the insulating circuit substrate with a heat sink 40 , a thermal strain can be released by deforming the metal layer 13 , and the cracking or the like of the ceramic substrate 11 can be suppressed.
- the heat sink 41 is formed of an Al-SiC composite material (so-called AlSiC) of a porous body formed of SiC and an aluminum material formed of aluminum or an aluminum alloy impregnated into the porous body.
- AlSiC Al-SiC composite material
- ADC12 solidus temperature: 570° C.
- the ratio tb/ta of the thickness tb of the metal layer 13 to the thickness ta of the aluminum bonding layer 31 is 0.08 or higher. Therefore, the thickness of the metal layer 13 formed of aluminum or an aluminum alloy can be secured, a thermal strain during loading of a thermal cycle can be absorbed by the metal layer 13 , and the cracking or the like of the ceramic substrate 11 can be suppressed.
- the ratio tb/ta of the thickness tb of the metal layer 13 to the thickness ta of the aluminum bonding layer 31 is 40 or lower. Therefore, the thickness of the aluminum bonding layer 31 is not larger than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured.
- the total thickness (ta+tb) of the metal layer 13 and the aluminum bonding layer 31 is 2.0 mm or less. Therefore, the total thickness (ta+tb) of the metal layer 13 and the aluminum bonding layer 31 interposed between the ceramic substrate 11 and the heat sink 41 is not large more than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured.
- a temperature difference between the solidus temperature of the aluminum bonding layer 31 and the solidus temperature of the aluminum alloy forming the bonding surface (in the embodiment, the skin layer 43 ) of the heat sink 41 is in a range of 0° C. to 80° C. Therefore, in the heat sink bonding step S 03 , even when solid phase diffusion bonding is performed under a relatively low-temperature condition, Al of the aluminum bonding layer 31 and Cu of the copper plate 52 can be sufficiently diffused, Cu of the copper plate 52 and Al of the bonding surface of the heat sink 41 can be sufficiently diffused, and the insulating circuit substrate 10 and the heat sink 41 can be reliably bonded to each other by solid phase diffusion bonding.
- the ceramic substrate 11 may be formed of another ceramic such as alumina (Al 2 O 3 ) or silicon nitride (Si 3 N 4 ).
- alumina Al 2 O 3
- silicon nitride Si 3 N 4
- an insulating resin may be used.
- a heat radiation plate is used as the heat sink, but the present invention is not limited thereto.
- the heat sink may be a cooler including a passage through which a cooling medium passes.
- the heat sink is formed of an Al—SiC composite material (so-called AlSiC) in which an aluminum material formed of ADC12 is impregnated into a porous body formed of SiC, but the present invention is not limited thereto.
- the material or structure of the bonding surface of the heat sink is not limited as long as the bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower.
- the circuit layer is formed of aluminum or an aluminum alloy, but the present invention is not limited thereto.
- the circuit layer may be formed of another metal such as copper or a copper alloy, or may have a structure in which an aluminum layer formed of aluminum or an aluminum alloy and a copper layer formed of copper or a copper alloy are laminated.
- the aluminum bonding layer is formed by bonding the clad material to the metal layer.
- the order of the aluminum bonding layer forming step is not particularly limited.
- the aluminum bonding layer may be formed by laminating an aluminum plate (for example, A 3003 ) that forms the aluminum bonding layer and a brazing material foil (for example, A 4045 ) instead of using the clad material 51 .
- the circuit layer and metal layer forming step S 01 and the aluminum bonding layer forming step S 02 can be performed at once.
- the aluminum bonding layer is formed of aluminum (for example, A 5056 alloy (solidus temperature: 582° C.)) having a solidus temperature of 565° C. or higher and lower than 615° C.
- bonding may be performed using a laminated brazing material in which Mg is laminated on an Al-Si brazing material under conditions of degree of vacuum: 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, temperature: 560° C. to 575° C. (not exceeding the solidus temperature), and pressurization load: 0.1 MPa to 3.5 MPa.
- the aluminum bonding layer is formed of aluminum (for example, ADC12 (solidus temperature: 528° C.)) having a solidus temperature of 510° C. or higher and lower than 565° C., by diffusing alloy elements included in ADC12 or the like to the metal layer side as disclosed in Japanese Unexamined Patent Application, First Publication No. 2016-189448, solid phase diffusion bonding may be performed under conditions of degree of vacuum: 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, temperature: 400° C. to 560° C., and pressurization load: 0.6 MPa to 3.5 MPa.
- ADC12 solidus temperature: 528° C.
- the aluminum bonding layer forming step S 02 is performed after performing the circuit layer and metal layer forming step S 01 to produce the insulating circuit substrate 10 .
- the aluminum plates 22 and 23 are laminated on the first surface and the second surface of the ceramic substrate 11 via the brazing materials 26 and 27 .
- the ceramic substrate 11 and the aluminum plates 22 and 23 are bonded to each other to form the circuit layer 12 and the metal layer 13 .
- bonding conditions in the circuit layer and metal layer forming step S 01 be set as follows: the degree of vacuum is in a range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, the pressurization load is in a range of 0.1 MPa to 3.5 MPa, and the heating temperature is in a range of 560° C. to 655° C.
- the brazing materials 26 and 27 an Al-Si brazing material is preferably used.
- the aluminum bonding layer 31 is formed.
- the heat sink 41 by bonding the heat sink 41 , the insulating circuit substrate with a heat sink 40 is produced.
- the ceramic substrate and the aluminum plates forming the circuit layer and the metal layer were bonded to each other using an Al-7.5 mass % Si brazing material foil (thickness 12 ⁇ m) in a vacuum atmosphere (3 ⁇ 10 ⁇ 3 Pa) under conditions of pressurization load: 6 MPa, heating temperature: 645° C., and holding time: 45 min.
- An aluminum bonding layer (37 mm ⁇ 37 nun) formed of a material shown in Table 1 and having a thickness shown in Table 1 was formed on the insulating circuit substrate.
- the aluminum bonding layer was formed of A 3003 alloy
- bonding was performed using a clad material of A 3003 alloy and A 4045 alloy in a nitrogen atmosphere under conditions of pressurization load: 1.2 MPa, heating temperature: 630° C., and holding time: 45 min.
- the aluminum bonding layer was formed of 4N—Al
- an Al-7.5 mass % Si brazing material foil (thickness 12 ⁇ m) was provided between the metal layer and the 4N—Al plate forming the aluminum bonding layer, and bonding was performed in a vacuum atmosphere (6 ⁇ 10 ⁇ 4 Pa) under conditions of heating temperature: 645° C. and pressurization load: 6 MPa.
- a heat sink (50 mm ⁇ 60 mm ⁇ thickness 5.0 mm/thickness of skin layer: 0.1 mm) formed of an Al—SiC composite material (so-called AlSiC) in which aluminum having a solidus temperature shown in Table 2 was impregnated into a porous body of SiC was laminated on the aluminum bonding layer via a copper bonding material (rolled plate of oxygen free copper: 37 mm ⁇ 37 mm ⁇ thickness 1.0 mm).
- This laminated body was pressurized in a laminating direction at 21 MPa and was held at 490° C. for 150 min such that the aluminum bonding layer and the copper bonding material were bonded to each other and the copper bonding material and the heat sink were bonded to each other by solid phase diffusion bonding.
- the obtained insulating circuit substrate with a heat sink was evaluated for the respective items in the following order.
- the indentation hardness of the metal layer of the insulating circuit substrate with a heat sink was measured using a nanoindentation method. 10 measurement points for equally dividing the metal layer into 12 portions in a thickness direction were selected, the indentation hardnesses of the respective measurement points were measured, and the average value thereof was calculated.
- a load-displacement relation was measured with a method according to ISO 14577 when a negative pressure was applied at a test load of 5000 mgf using a triangular pyramidal diamond indenter called a Berkovich indenter having a dihedral angle of 114.8° to 115.1° .
- An ultrasonic-detected image of a interface between the copper bonding material and a member formed of aluminum having a higher solidus temperature among the aluminum (in the case of AlSiC, the impregnated aluminum) forming the heat sink and the aluminum forming the aluminum bonding layer was measured using an ultrasonic flaw detector (Fine Sat 200 , manufactured by Hitachi Power Solutions Co., Ltd.), and a bonding rate was calculated from the following expression.
- An initial bonding area refers to the area to be bonded before bonding, that is, the area of the copper bonding material.
- exfoliation is represented by a white portion in the bonding layer. Therefore, the area of the white portion was set as the exfoliation area. A case where the bonding rate was 90% or higher was evaluated as “o”, and a case where the bonding rate was lower than 90% was evaluated as “x”.
- Example 1 Metal Layer Aluminum Bonding Layer Indentation Solidus Hardness Thickness tb Temperature Thickness ta Material (mgf/ ⁇ m 2 ) (mm) Material (° C.) (mm) tb/ta ta + tb
- Example 1 4N—Al 40 0.30 A3003 643 0.10 3.00 0.40
- Example 2 4N—Al 42 0.20 A3003 643 0.20 1.00 0.40
- Example 3 4N—Al 43 0.10 A3003 643 0.30 0.33 0.40
- Example 5 4N—Al 44 0.07 A3003 643 0.33 0.21 0.40
- Example 6 4N—Al 44 0.05 A3003 643 0.35 0.14 0.40
- Example 7 4N—Al 45 0.03 A3003 643 0.37 0.08 0.40
- Example 8 4N—Al 39 0.37 A3003 643 0.03 12.33 0.40
- Example 9 4N—
- Comparative Example 1 In Comparative Example 1 in which the indentation hardness of the metal layer was 50 mgf/ ⁇ m 2 or higher, the cracking of the ceramic substrate occurred. In Comparative Example 2 in which the aluminum bonding layer was not provided, the bondability between the metal layer and the copper bonding material deteriorated. In Comparative Example 3 in which the heat sink was formed of aluminum having a solidus temperature of higher than 650° C., the bondability between the heat sink and the copper bonding material deteriorated. In Comparative Example 4 in which the aluminum bonding layer was formed of aluminum having a solidus temperature of higher than 650° C., the bondability between the aluminum bonding layer and the copper bonding material decreased.
- a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature. Therefore, the present invention is industrially applicable.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
- The present invention relates to a method for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer that is formed on a first surface of an insulating layer and a metal layer that is formed on a second surface of the insulating layer, and the heat sink being bonded to the metal layer side of the insulating circuit substrate.
- Priority is claimed on Japanese Patent Application No. 2017-064878, filed on Mar. 29, 2017, the content of which is incorporated herein by reference.
- A power module, a LED module, or a thermoelectric module has a structure in which a power semiconductor element, a LED element, or a thermoelectric element is bonded to an insulating circuit substrate in which a circuit layer formed of a conductive material is formed on a first surface of an insulating layer.
- In a power semiconductor element for high power control that is used for controlling wind power generation, an electric vehicle, a hybrid vehicle, or the like, the amount of heat generated during an operation is large. As a substrate on which the power semiconductor element is mounted, for example, an insulating circuit substrate is widely used in the related art, the insulating circuit substrate including: a ceramic substrate that is formed of aluminum nitride, silicon nitride, or the like; and a circuit layer that is formed by bonding a metal plate having excellent conductivity to a first surface of the ceramic substrate. As the insulating circuit substrate, an insulating circuit substrate including a metal layer that is formed by bonding a metal plate to a second surface of the ceramic substrate is also provided.
- For example, PTL 1 discloses an insulating circuit substrate including a circuit layer and a metal layer that are formed on a first surface and a second surface of a ceramic substrate, respectively, using an aluminum plate or a copper plate. A heat sink is bonded to a second surface side of the insulating circuit substrate such that heat transmitted from a semiconductor element to the insulating circuit substrate side is dissipated to the outside via the heat sink.
- As a material of the heat sink, an aluminum alloy or an aluminum material such as aluminum-based composite material disclosed in
PTL 2 in which a silicon carbide member represented by AlSiC is filled with aluminum or an aluminum alloy is widely used. When the heat sink is formed of an aluminum alloy having a low solidus temperature, the heat sink can be formed in a shape having a relatively complex structure, and heat radiation can be improved. When the heat sink is formed of an aluminum-based composite material in which a silicon carbide member is filled with aluminum or an aluminum alloy, the thermal expansion coefficient is close to that of the insulating circuit substrate such that a thermal strain during loading of a thermal cycle can be suppressed to be low. - As means for bonding a metal layer formed of aluminum or an aluminum alloy and a heat sink formed of an aluminum material to each other, for example,
PTL 3 discloses a method of providing a bonding material formed of copper or a copper alloy between a metal layer and a heat sink formed of aluminum or an aluminum alloy and bonding the metal layer and the bonding material to each other and bonding the bonding material and the heat sink to each other by solid phase diffusion bonding. - [PTL 1] Japanese Patent No. 3171234
- [PTL 2] Japanese Unexamined Patent Application, First Publication No. 2000-281468
- [PTL 3] Japanese Unexamined Patent Application, First Publication No. 2014-060215
- Recently, the size and thickness of a power module have been reduced, and the usage environment thereof has also become stricter. Therefore, the amount of heat generated from a semiconductor element has increased, conditions of a thermal cycle have become stricter, and an insulating circuit substrate with a heat sink having excellent bonding reliability and excellent heat radiation as compared to the related art has been required.
- In the insulating circuit substrate, the metal layer is formed of a metal having a relatively low deformation resistance, for example, aluminum (4N aluminum) having a purity of 99.99 mass % or higher such that a thermal strain during loading of a thermal cycle is absorbed by deformation of the metal layer and cracking or the like of the insulating layer can be suppressed.
- When the metal layer is formed of 4N aluminum, a bonding surface of the heat sink is formed of an aluminum alloy such as ADC12, and the metal layer and the bonding surface of the heat sink are bonded to each other by solid phase diffusion bonding using the method described in
PTL 3, there is a large difference in solidus temperature between the metal layer and the bonding surface of the heat sink. Therefore, it is necessary that a temperature condition during solid phase diffusion bonding be lower than the solidus temperature of the aluminum alloy. In 4N aluminum having a high purity, the diffusion energy is high, and a diffusion phenomenon is not likely to occur. Therefore, solid phase diffusion between Al of the metal layer formed of 4N aluminum having a high solidus temperature and Cu of the bonding material is insufficient, and bonding reliability between the metal layer and the heat sink may deteriorate. - An object of the present invention is to provide a method for producing an insulating circuit substrate with a heat sink in which a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature.
- According to the present invention, a method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer that is formed on a first surface of an insulating layer and a metal layer that is formed on a second surface of the insulating layer, and the heat sink being bonded to the metal layer side of the insulating circuit substrate. The metal layer is formed of aluminum or an aluminum alloy, and an indentation hardness of the metal layer is lower than 50 mgf/μm2. A bonding surface of the heat sink with the insulating circuit substrate is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower. This production method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on a surface of the metal layer opposite to the insulating layer; and a heat sink bonding step of bonding the heat sink to the aluminum bonding layer by laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and a bonding surface of the heat sink and bonding the aluminum bonding layer and the copper bonding material to each other and bonding the copper bonding material and the heat sink to each other by solid phase diffusion bonding. Solid phase diffusion bonding refers to a method of diffusing atoms from a bonding material to a bonding surface while maintaining the bonding material to be in a solid phase state without entering a liquid phase state.
- In this method, a difference in solidus temperature between the aluminum or the aluminum alloy forming the aluminum bonding layer and the aluminum or the aluminum alloy forming the bonding surface of the heat sink can be made to be small, and even when solid phase diffusion bonding is performed under a relatively low-temperature condition, Al of the aluminum bonding layer and Cu of the copper bonding material can be sufficiently diffused, Cu of the copper bonding material and Al of the bonding surface of the heat sink can be sufficiently diffused, and the insulating circuit substrate and the heat sink can be reliably bonded to each other.
- The metal layer is formed of aluminum or an aluminum alloy, and an indentation hardness of the metal layer is lower than 50 mgf/μm2. Therefore, during loading of a thermal cycle on the insulating circuit substrate with a heat sink, a thermal strain can be released by deforming the metal layer, and the cracking or the like of the insulating layer can be suppressed. Further, the bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower. Therefore, a heat sink suitable for required performance can be configured. Specifically, the indentation hardness is a value measured using a method according to ISO 14577.
- It is preferable that a ratio tb/ta of a thickness tb of the metal layer to a thickness ta of the aluminum bonding layer be in a range of 0.08 to 40. In addition, the ratio tb/ta of the thickness tb of the metal layer to the thickness ta of the aluminum bonding layer is 0.08 or higher. Therefore, the thickness of the metal layer formed of aluminum or an aluminum alloy can be secured, a thermal strain during loading of a thermal cycle can be absorbed by the metal layer, and the cracking or the like of the insulating layer can be suppressed.
- On the other hand, the ratio tb/ta of the thickness tb of the metal layer to the thickness to of the aluminum bonding layer is 40 or lower. Therefore, for example, when the metal layer and the aluminum bonding layer are brazed, a brazing material (liquid phase) erodes the aluminum bonding layer, and a grain boundary melts. As a result, unevenness is generated on a surface (a surface opposite to the metal layer) of the aluminum bonding layer, and voids derived from the generated unevenness are not formed between the aluminum bonding layer and the copper bonding material, and thus the aluminum bonding layer and the copper bonding material can be favorably bonded to each other.
- It is preferable that a total thickness of the metal layer and the aluminum bonding layer be 2.0 mm or less. In this case, the total thickness of the metal layer and the aluminum bonding layer is 2.0 mm or less. Therefore, the total thickness of the metal layer and the aluminum bonding layer interposed between the insulating layer and the heat sink is not larger than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured.
- According to the present invention, a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature.
-
FIG. 1 is a cross-sectional view illustrating a power module including an insulating circuit substrate with a heat sink produced according to an embodiment of the present invention. -
FIG. 2 is an enlarged cross-sectional view illustrating a bonded interface between a metal layer and a heat sink in the insulating circuit substrate with a heat sink illustrated inFIG. 1 . -
FIG. 3 is a cross-sectional view illustrating the heat sink used in the insulating circuit substrate with a heat sink illustrated inFIG. 1 . -
FIG. 4 is a flowchart illustrating an embodiment of a method for producing the insulating circuit substrate with a heat sink according to the present invention. -
FIG. 5 is a cross-sectional view illustrating the method for producing the insulating circuit substrate with a heat sink according to the embodiment of the present invention. -
FIG. 6 is a cross-sectional view illustrating the method for producing the insulating circuit substrate with a heat sink according to the embodiment of the present invention. -
FIG. 7 is a flowchart illustrating a method for producing an insulating circuit substrate with a heat sink according to another embodiment of the present invention. -
FIG. 8 is a cross-sectional view illustrating a method for producing an insulating circuit substrate with a heat sink according to another embodiment of the present invention. -
FIG. 1 illustrates an insulating circuit substrate with aheat sink 40 produced using a method for producing an insulating circuit substrate with a heat sink according to the embodiment of the present invention and a power module 1 in which the insulating circuit substrate with aheat sink 40 is used. - The power module 1 illustrated in
FIG. 1 includes: aninsulating circuit substrate 10; asemiconductor element 3 that is bonded to a first surface (inFIG. 1 , an upper surface) of theinsulating circuit substrate 10 via asolder layer 2; and aheat sink 41 that is bonded to a lower side of theinsulating circuit substrate 10. Theinsulating circuit substrate 10 to which theheat sink 41 is bonded is the insulating circuit substrate with aheat sink 40 according to the embodiment. - The
semiconductor element 3 is formed of a semiconductor material such as Si. Thesolder layer 2 that bonds theinsulating circuit substrate 10 and thesemiconductor element 3 to each other is not particularly limited and is preferably, for example, a Sn—Ag-based solder material, a Sn—Cu-based solder material, a Sn—In-based solder material, or a Sn—Ag—Cu-based solder material (so-called lead-free solder material). - As illustrated in
FIG. 1 , the insulatingcircuit substrate 10 includes: aceramic substrate 11 that is an insulating layer; acircuit layer 12 that is provided on a first surface (inFIG. 1 , an upper surface) of theceramic substrate 11; and ametal layer 13 that is provided on a second surface (inFIG. 1 , a lower surface) of theceramic substrate 11. Planar shapes of thecircuit layer 12, theceramic substrate 11, and themetal layer 13 may be a rectangular shape or the like as necessary. In this embodiment, the dimension of theceramic substrate 11 is larger than those of thecircuit layer 12 and themetal layer 13 to obtain high insulating properties. - The
ceramic substrate 11 is not particularly limited as long as it prevents electrical connection between thecircuit layer 12 and themetal layer 13. For example, theceramic substrate 11 may be formed of aluminum nitride (AIN), silicon nitride (Si3N4), or alumina (Al2O3) having high insulating properties and is preferably aluminum nitride. The thickness of theceramic substrate 11 is not particularly limited, is preferably set in a range of 0.2 mm to 1.5 mm, and is set as 0.635 mm in the embodiment. - The
circuit layer 12 is formed by bonding a metal plate having conductivity to the first surface of theceramic substrate 11. In the embodiment, as illustrated inFIG. 5 , thecircuit layer 12 is formed by bonding analuminum plate 22 formed of aluminum or an aluminum alloy. Specifically, thealuminum plate 22 forming thecircuit layer 12 is not particularly limited, and a rolled plate of aluminum (2N aluminum) having a purity of 99 mass % or higher or an aluminum alloy such as A3003 or A6063 is preferably used. - A circuit pattern is formed on the
circuit layer 12, and a first surface (inFIG. 1 , an upper surface) of thecircuit layer 12 is a mounting surface on which thesemiconductor element 3 is mounted. The thickness of thecircuit layer 12 is not particularly limited, is preferably set in a range of 0.1 mm to 2.0 mm, and may be set as 0.4 mm - The
metal layer 13 is formed by bonding analuminum plate 23 formed of aluminum or an aluminum alloy to the second surface of theceramic substrate 11. An indentation hardness of themetal layer 13 is lower than 50 mgf/μm2. The indentation hardness is a value of the insulating circuit substrate with aheat sink 40 at 25° C. Specifically, the indentation hardness is a value measured using a method according to ISO 14577. - As the
aluminum plate 23 forming themetal layer 13, for example, aluminum (2N aluminum) having a purity of 99 mass % or higher, aluminum (3N aluminum) having a purity of 99.9 mass % or higher, or aluminum (4N aluminum) having a purity of 99.99 mass % or higher can be used. - In the embodiment, it is preferable that a rolled plate of aluminum (4N aluminum) having a purity of 99.99 mass % or higher be used as the
aluminum plate 23 forming themetal layer 13. A thickness tb of themetal layer 13 is not particularly limited, is preferably set in a range of 0.1 mm to 2.0 mm, and may be set as, for example, 0.30 mm - The
heat sink 41 is provided to cool theinsulating circuit substrate 10 and, as illustrated inFIG. 1 , is a heat radiation plate formed of a material having excellent thermal conductivity. - The
heat sink 41 is not particularly limited and is preferably formed of an Al—SiC composite material (so-called AlSiC) of a porous body formed of SiC and an aluminum material formed of aluminum or an aluminum alloy impregnated into the porous body. As the aluminum material impregnated into the porous body formed of SiC, ADC12 (solidus temperature: 570° C.) can be used. - In the
heat sink 41, as illustrated inFIG. 3 , askin layer 43 formed of an aluminum material (in the embodiment, ADC12) impregnated into a porous body is formed on a surface of a heat sinkmain body 42 formed of AlSiC. - The thickness of the heat sink
main body 42 is not particularly limited and is preferably in a range of 0.5 mm to 5.0 mm. A thickness is of theskin layer 43 is preferably 0.01 times to 0.1 times of the thickness of the heat sinkmain body 42. - The
metal layer 13 of the insulatingcircuit substrate 10 and theheat sink 41 are bonded to each other via analuminum bonding layer 31 and acopper bonding layer 32. - The
aluminum bonding layer 31 is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower, and is preferably formed of an A3003 alloy (solidus temperature: 643° C.). - A temperature difference between the solidus temperature of the
aluminum bonding layer 31 and the solidus temperature of the aluminum alloy forming a bonding surface (in the embodiment, the skin layer 43) of theheat sink 41 is preferably in a range of 80° C. or lower. - A thickness to of the
aluminum bonding layer 31 is not particularly limited, is preferably set in a range of 0.03 mm to 1.5 mm, and may be set as 0.1 mm in the embodiment. - A ratio tb/ta of the thickness tb of the
metal layer 13 to the thickness to of thealuminum bonding layer 31 is not particularly limited and is preferably in a range of 0.08 to 40. The total thickness (ta+tb) of themetal layer 13 and thealuminum bonding layer 31 may be 2.0 mm or less. It is preferable that themetal layer 13 and thealuminum bonding layer 31 be bonded to each other by bonding using a brazing material or solid phase diffusion bonding. - The
copper bonding layer 32 is formed of copper or a copper alloy. In the embodiment, as illustrated inFIG. 6 , thecopper bonding layer 32 is formed by bonding acopper plate 52 formed of a rolled plate of oxygen free copper. A thickness tc of thecopper bonding layer 32 is not particularly limited and is preferably in a range of 0.05 mm to 5.0 mm Thealuminum bonding layer 31 and thecopper bonding layer 32 are bonded to each other and thecopper bonding layer 32 and the heat sink 41 (skin layer 43) are bonded to each other by solid phase diffusion bonding. - Next, a method for producing the insulating circuit substrate with a
heat sink 40 according to the embodiment will be described with reference toFIGS. 4 to 6 . - (Circuit Layer and Metal Layer Forming Step S01/Aluminum Bonding Layer Forming Step S02)
- First, as illustrated in
FIG. 5 , thealuminum plates ceramic substrate 11 viabrazing materials brazing materials - A
clad material 51 that forms thealuminum bonding layer 31 is laminated on a second surface side (inFIG. 5 , a lower side) of thealuminum plate 23 that forms themetal layer 13. Theclad material 51 includes amain body layer 51 a formed of A3003 alloy and abrazing material layer 51 b formed of A4045 alloy, and themain body layer 51 a forms thealuminum bonding layer 31. As illustrated inFIG. 5 , theclad material 51 is laminated such that thebrazing material layer 51 b faces thealuminum plate 23 side that forms themetal layer 13. - In a state where the
aluminum plate 22, theceramic substrate 11, thealuminum plate 23, and theclad material 51 are pressurized in a laminating direction, the laminated body is heated. As a result, theceramic substrate 11 and thealuminum plates circuit layer 12 and themetal layer 13, and themetal layer 13 and theclad material 51 are bonded to each other to form the aluminum bonding Al—Si—Mg-based brazing material is preferably used. Aclad material 51 that forms thealuminum bonding layer 31 is laminated on a second surface side (inFIG. 5 , a lower side) of thealuminum plate 23 that forms themetal layer 13. Theclad material 51 includes amain body layer 51 a formed of A3003 alloy and abrazing material layer 51 b formed of A4045 alloy, and themain body layer 51 a forms thealuminum bonding layer 31. As illustrated inFIG. 5 , theclad material 51 is laminated such that thebrazing material layer 51 b faces thealuminum plate 23 side that forms themetal layer 13. - In a state where the
aluminum plate 22, theceramic substrate 11, thealuminum plate 23, and theclad material 51 are pressurized in a laminating direction, the laminated body is heated. As a result, theceramic substrate 11 and thealuminum plates circuit layer 12 and themetal layer 13, and themetal layer 13 and theclad material 51 are bonded to each other to form thealuminum bonding layer 31. That is, in the embodiment, the circuit layer and metal layer forming step S01 and the aluminum bonding layer forming step S02 are performed at once. - Bonding conditions in the circuit layer and metal layer forming step S01 and the aluminum bonding layer forming step S02 are preferably set as follows: the atmosphere is a vacuum, the pressurization load is in a range of 0.1 MPa to 3.5 MPa, and the heating temperature is in a range of 560° C. to 630° C. As described above, the insulating
circuit substrate 10 and thealuminum bonding layer 31 according to the embodiment are formed. - (Heat Sink Bonding Step S03)
- Next, as illustrated in
FIG. 6 , theheat sink 41 is laminated on the second surface side (inFIG. 6 , a lower side) of thealuminum bonding layer 31 via thecopper plate 52 as a copper bonding material formed of a rolled plate of oxygen free copper. Theheat sink 41 is laminated such that theskin layer 43 faces thecopper plate 52 side. - The insulating
circuit substrate 10, the insulatingcircuit substrate 10 to which thealuminum bonding layer 31 is bonded, thecopper plate 52, and theheat sink 41 are pressurized in the laminating direction and heated. As a result, thealuminum bonding layer 31 and thecopper plate 52 are bonded to each other and thecopper plate 52 and the heat sink 41 (skin layer 43) are bonded to each other by solid phase diffusion bonding. - In the embodiment, as solid phase diffusion conditions, a load in the laminating direction is preferably in a range of 6 kgf/cm2 to 35 kgf/cm2 (0.6 MPa to 3.5 MPa).
- The bonding temperature is in a range of 460° C. to 540° C. and preferably in a range of 480° C. to 520° C. The holding time is preferably in a range of 30 min to 240 min
- Through the above-described steps, the insulating circuit substrate with a
heat sink 40 according to the embodiment is produced. - (Die-Bonding Step S04)
- Next, the
semiconductor element 3 is laminated on thecircuit layer 12 of the insulating circuit substrate with aheat sink 40 via a solder material, and thecircuit layer 12 of the insulating circuit substrate with aheat sink 40 and thesemiconductor element 3 are bonded to each other in a reducing furnace. - The power module 1 illustrated in
FIG. 1 is produced as described above. - The above-described production method includes: the aluminum bonding layer forming step S02 of forming the
aluminum bonding layer 31 formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on a surface of themetal layer 13 opposite to theceramic substrate 11; and the heat sink bonding step S03 of bonding theheat sink 41 to the aluminum bonding layer by laminating thecopper plate 52 formed of copper or a copper alloy between thealuminum bonding layer 31 and a bonding surface of theheat sink 41 and bonding thealuminum bonding layer 31 and thecopper plate 52 to each other and bonding thecopper plate 52 and theheat sink 41 to each other by solid phase diffusion bonding. Therefore, a difference in solidus temperature between the aluminum or the aluminum alloy forming thealuminum bonding layer 31 and the aluminum or the aluminum alloy forming the bonding surface (skin layer 43) of theheat sink 41 is small, and even when solid phase diffusion bonding is performed under a relatively low-temperature condition, Al of thealuminum bonding layer 31 and Cu of thecopper plate 52 can be sufficiently diffused, Cu of thecopper plate 52 and Al of the bonding surface of theheat sink 41 can be sufficiently diffused, and the insulatingcircuit substrate 10 and theheat sink 41 can be reliably bonded to each other. - In the insulating circuit substrate with a
heat sink 40 according to the embodiment, themetal layer 13 is formed of aluminum or an aluminum alloy (in the embodiment, 4N aluminum), and the indentation hardness of themetal layer 13 is lower than 50 mgf/um2. Therefore, during loading of a thermal cycle on the insulating circuit substrate with aheat sink 40, a thermal strain can be released by deforming themetal layer 13, and the cracking or the like of theceramic substrate 11 can be suppressed. - In addition, the
heat sink 41 is formed of an Al-SiC composite material (so-called AlSiC) of a porous body formed of SiC and an aluminum material formed of aluminum or an aluminum alloy impregnated into the porous body. Specifically, as the aluminum material impregnated into the porous body formed of SiC, ADC12 (solidus temperature: 570° C.) is used. Therefore, the thermal expansion coefficient of theheat sink 41 is close to the thermal expansion coefficient of the insulatingcircuit substrate 10, and the occurrence of a thermal strain during loading of a thermal cycle can be suppressed. - In addition, the ratio tb/ta of the thickness tb of the
metal layer 13 to the thickness ta of thealuminum bonding layer 31 is 0.08 or higher. Therefore, the thickness of themetal layer 13 formed of aluminum or an aluminum alloy can be secured, a thermal strain during loading of a thermal cycle can be absorbed by themetal layer 13, and the cracking or the like of theceramic substrate 11 can be suppressed. - On the other hand, the ratio tb/ta of the thickness tb of the
metal layer 13 to the thickness ta of thealuminum bonding layer 31 is 40 or lower. Therefore, the thickness of thealuminum bonding layer 31 is not larger than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured. - Further, the total thickness (ta+tb) of the
metal layer 13 and thealuminum bonding layer 31 is 2.0 mm or less. Therefore, the total thickness (ta+tb) of themetal layer 13 and thealuminum bonding layer 31 interposed between theceramic substrate 11 and theheat sink 41 is not large more than necessary, a thermal resistance in the laminating direction can be suppressed, and heat radiation can be secured. - A temperature difference between the solidus temperature of the
aluminum bonding layer 31 and the solidus temperature of the aluminum alloy forming the bonding surface (in the embodiment, the skin layer 43) of theheat sink 41 is in a range of 0° C. to 80° C. Therefore, in the heat sink bonding step S03, even when solid phase diffusion bonding is performed under a relatively low-temperature condition, Al of thealuminum bonding layer 31 and Cu of thecopper plate 52 can be sufficiently diffused, Cu of thecopper plate 52 and Al of the bonding surface of theheat sink 41 can be sufficiently diffused, and the insulatingcircuit substrate 10 and theheat sink 41 can be reliably bonded to each other by solid phase diffusion bonding. - Hereinabove, the embodiment of the present invention has been described. However, the present invention is not limited to the embodiment, and various modifications can be made within a range not departing from the technical ideas of the present invention.
- For example, in the description of the embodiment, aluminum nitride (AlN) is used as the
ceramic substrate 11, but the present invention is not limited thereto. Theceramic substrate 11 may be formed of another ceramic such as alumina (Al2O3) or silicon nitride (Si3N4). For example, an insulating resin may be used. - In the description, a heat radiation plate is used as the heat sink, but the present invention is not limited thereto. For example, the heat sink may be a cooler including a passage through which a cooling medium passes.
- Further, in the description of the embodiment, the heat sink is formed of an Al—SiC composite material (so-called AlSiC) in which an aluminum material formed of ADC12 is impregnated into a porous body formed of SiC, but the present invention is not limited thereto. The material or structure of the bonding surface of the heat sink is not limited as long as the bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower.
- Further, in the description of the embodiment, the circuit layer is formed of aluminum or an aluminum alloy, but the present invention is not limited thereto. The circuit layer may be formed of another metal such as copper or a copper alloy, or may have a structure in which an aluminum layer formed of aluminum or an aluminum alloy and a copper layer formed of copper or a copper alloy are laminated.
- In the description of the embodiment, the aluminum bonding layer is formed by bonding the clad material to the metal layer. However, the order of the aluminum bonding layer forming step is not particularly limited.
- For example, in
FIG. 5 , the aluminum bonding layer may be formed by laminating an aluminum plate (for example, A3003) that forms the aluminum bonding layer and a brazing material foil (for example, A4045) instead of using the cladmaterial 51. Even in this case, as in the embodiment, the circuit layer and metal layer forming step S01 and the aluminum bonding layer forming step S02 can be performed at once. - When the aluminum bonding layer is formed of aluminum (for example, A5056 alloy (solidus temperature: 582° C.)) having a solidus temperature of 565° C. or higher and lower than 615° C., bonding may be performed using a laminated brazing material in which Mg is laminated on an Al-Si brazing material under conditions of degree of vacuum: 10−6 Pa to 10−3 Pa, temperature: 560° C. to 575° C. (not exceeding the solidus temperature), and pressurization load: 0.1 MPa to 3.5 MPa.
- When the aluminum bonding layer is formed of aluminum (for example, ADC12 (solidus temperature: 528° C.)) having a solidus temperature of 510° C. or higher and lower than 565° C., by diffusing alloy elements included in ADC12 or the like to the metal layer side as disclosed in Japanese Unexamined Patent Application, First Publication No. 2016-189448, solid phase diffusion bonding may be performed under conditions of degree of vacuum: 10−6 Pa to 10−3 Pa, temperature: 400° C. to 560° C., and pressurization load: 0.6 MPa to 3.5 MPa.
- As described above, when bonding is performed using a laminated brazing material in which Mg is laminated on an Al-Si brazing material or when solid phase diffusion bonding is performed, as illustrated in
FIGS. 7 and 8 , the aluminum bonding layer forming step S02 is performed after performing the circuit layer and metal layer forming step S01 to produce the insulatingcircuit substrate 10. - That is, in the circuit layer and metal layer forming step S01, the
aluminum plates ceramic substrate 11 via thebrazing materials ceramic substrate 11 and thealuminum plates circuit layer 12 and themetal layer 13. It is preferable that bonding conditions in the circuit layer and metal layer forming step S01 be set as follows: the degree of vacuum is in a range of 10−6 Pa to 10−3 Pa, the pressurization load is in a range of 0.1 MPa to 3.5 MPa, and the heating temperature is in a range of 560° C. to 655° C. As thebrazing materials - As illustrated in
FIG. 8 , by laminating thealuminum plate 51 that forms thealuminum bonding layer 31 on a second surface side (inFIG. 8 a lower side) of themetal layer 13 of the insulatingcircuit substrate 10 and bonding themetal layer 13 of the insulatingcircuit substrate 10 and thealuminum plate 51 to each other under the above-described conditions, thealuminum bonding layer 31 is formed. Next, as illustrated inFIG. 6 , by bonding theheat sink 41, the insulating circuit substrate with aheat sink 40 is produced. - Hereinafter, an experiment for verifying the effectiveness of the present invention will be described. A circuit layer (37 mm×37 mm×thickness 0.4 mm) formed of aluminum (4N aluminum) having a purity of 99.99 mass % or higher was formed on a first surface of a ceramic substrate (40 mm×40 mm×thickness 0.635 mm) formed of aluminum nitride (AIN). A metal layer (37 mm×37 mm) formed of a material shown in Table 1 and having a thickness shown in Table 1 was formed on a second surface of the ceramic substrate. The ceramic substrate and the aluminum plates forming the circuit layer and the metal layer were bonded to each other using an Al-7.5 mass % Si brazing material foil (
thickness 12 μm) in a vacuum atmosphere (3×10−3 Pa) under conditions of pressurization load: 6 MPa, heating temperature: 645° C., and holding time: 45 min. - An aluminum bonding layer (37 mm×37 nun) formed of a material shown in Table 1 and having a thickness shown in Table 1 was formed on the insulating circuit substrate. When the aluminum bonding layer was formed of A3003 alloy, bonding was performed using a clad material of A3003 alloy and A4045 alloy in a nitrogen atmosphere under conditions of pressurization load: 1.2 MPa, heating temperature: 630° C., and holding time: 45 min.
- When the aluminum bonding layer was formed of ADC12, bonding was performed in a vacuum atmosphere (6×10−4 Pa) under conditions of heating temperature: 500° C. and pressurization load: 20 MPa.
- When the aluminum bonding layer was formed of 4N—Al, an Al-7.5 mass % Si brazing material foil (
thickness 12 μm) was provided between the metal layer and the 4N—Al plate forming the aluminum bonding layer, and bonding was performed in a vacuum atmosphere (6×10−4 Pa) under conditions of heating temperature: 645° C. and pressurization load: 6 MPa. - A heat sink (50 mm×60 mm×thickness 5.0 mm/thickness of skin layer: 0.1 mm) formed of an Al—SiC composite material (so-called AlSiC) in which aluminum having a solidus temperature shown in Table 2 was impregnated into a porous body of SiC was laminated on the aluminum bonding layer via a copper bonding material (rolled plate of oxygen free copper: 37 mm×37 mm×thickness 1.0 mm). This laminated body was pressurized in a laminating direction at 21 MPa and was held at 490° C. for 150 min such that the aluminum bonding layer and the copper bonding material were bonded to each other and the copper bonding material and the heat sink were bonded to each other by solid phase diffusion bonding.
- When the material of the heat sink in Table 2 was 4N—Al, an aluminum plate (50 mm×60 mm×thickness 5.0 mm) having a purity of 99.99 mass % or higher (4N—Al) was used.
- The obtained insulating circuit substrate with a heat sink was evaluated for the respective items in the following order.
- (Measurement of Indentation Hardness)
- The indentation hardness of the metal layer of the insulating circuit substrate with a heat sink was measured using a nanoindentation method. 10 measurement points for equally dividing the metal layer into 12 portions in a thickness direction were selected, the indentation hardnesses of the respective measurement points were measured, and the average value thereof was calculated. In order to measure the indentation hardness, a load-displacement relation was measured with a method according to ISO 14577 when a negative pressure was applied at a test load of 5000 mgf using a triangular pyramidal diamond indenter called a Berkovich indenter having a dihedral angle of 114.8° to 115.1° . The indentation hardness was obtained from the expression Indentation Hardness=37.926×10−3 (load [mgf]÷displacement [μm] 2).
- (Bonding State)
- An ultrasonic-detected image of a interface between the copper bonding material and a member formed of aluminum having a higher solidus temperature among the aluminum (in the case of AlSiC, the impregnated aluminum) forming the heat sink and the aluminum forming the aluminum bonding layer was measured using an ultrasonic flaw detector (Fine Sat 200, manufactured by Hitachi Power Solutions Co., Ltd.), and a bonding rate was calculated from the following expression. An initial bonding area refers to the area to be bonded before bonding, that is, the area of the copper bonding material.
-
(Bonding Rate)={(Initial Bonding Area)−(Exfoliation Area)}/(Initial Bonding Area) - In an image obtained by binarizing the ultrasonic-detected image, exfoliation is represented by a white portion in the bonding layer. Therefore, the area of the white portion was set as the exfoliation area. A case where the bonding rate was 90% or higher was evaluated as “o”, and a case where the bonding rate was lower than 90% was evaluated as “x”.
- (Cracking of Ceramic Substrate)
- 3000 thermal cycles of −40° C.↔150° C. were performed on the insulating circuit substrate with a heat sink, and the ceramic substrate was observed using an ultrasonic flaw detector after the thermal cycles. A case where cracking did not occur was evaluated as “o”, and a case where cracking occurred was evaluated as “x”.
-
TABLE 1 Metal Layer Aluminum Bonding Layer Indentation Solidus Hardness Thickness tb Temperature Thickness ta Material (mgf/μm2) (mm) Material (° C.) (mm) tb/ta ta + tb Example 1 4N—Al 40 0.30 A3003 643 0.10 3.00 0.40 Example 2 4N—Al 42 0.20 A3003 643 0.20 1.00 0.40 Example 3 4N—Al 43 0.10 A3003 643 0.30 0.33 0.40 Example 4 4N—Al 40 0.35 A3003 643 0.05 7.00 0.40 Example 5 4N—Al 44 0.07 A3003 643 0.33 0.21 0.40 Example 6 4N—Al 44 0.05 A3003 643 0.35 0.14 0.40 Example 7 4N—Al 45 0.03 A3003 643 0.37 0.08 0.40 Example 8 4N—Al 39 0.37 A3003 643 0.03 12.33 0.40 Example 9 4N—Al 35 0.90 A3003 643 0.30 3.00 1.20 Example 10 4N—Al 35 1.20 A3003 643 0.40 3.00 1.60 Example 11 4N—Al 34 1.50 A3003 643 0.50 3.00 2.00 Example 12 4N—Al 34 1.95 A3003 643 0.05 39.00 2.00 Example 13 4N—Al 38 0.50 A3003 643 1.50 0.33 2.00 Example 14 4N—Al 39 0.40 A3003 643 1.60 0.25 2.00 Example 15 4N—Al 40 0.30 ADC12 570 0.10 3.00 0.40 Example 16 4N—Al 40 0.30 A6063 616 0.10 3.00 0.40 Example 17 4N—Al 40 0.30 A3003 643 0.10 3.00 0.40 Example 18 2N—A1 49 0.30 A3003 643 0.10 3.00 0.40 Example 19 4N—Al 40 0.30 A3003 643 0.10 3.00 0.40 Comparative A3003 58 0.30 A3003 643 0.10 3.00 0.40 Example 1 Comparative 4N—Al 40 0.30 — — — — 0.30 Example 2 Comparative 4N—Al 40 0.30 A3003 643 0.10 3.00 0.40 Example 3 Comparative 4N—Al 40 0.30 4N—Al 660 0.10 3.00 0.40 Example 4 -
TABLE 2 Heat Sink Difference in Solidus Solidus Temperature between Evaluation Temperature Aluminum Bonding Bonding Cracking of Material (° C.) Layer and Heat Sink State Ceramic Substrate Example 1 AlSiC 570 73 ◯ ◯ Example 2 AlSiC 570 73 ◯ ◯ Example 3 AlSiC 570 73 ◯ ◯ Example 4 AlSiC 570 73 ◯ ◯ Example 5 AlSiC 570 73 ◯ ◯ Example 6 AlSiC 570 73 ◯ ◯ Example 7 AlSiC 570 73 ◯ ◯ Example 8 AlSiC 570 73 ◯ ◯ Example 9 AlSiC 570 73 ◯ ◯ Example 10 AlSiC 570 73 ◯ ◯ Example 11 AlSiC 570 73 ◯ ◯ Example 12 AlSiC 570 73 ◯ ◯ Example 13 AlSiC 570 73 ◯ ◯ Example 14 AlSiC 570 73 ◯ ◯ Example 15 AlSiC 570 0 ◯ ◯ Example 16 AlSiC 570 46 ◯ ◯ Example 17 AlSiC 616 27 ◯ ◯ Example 18 AlSiC 570 73 ◯ ◯ Example 19 AlSiC 650 7 ◯ ◯ Comparative AlSiC 570 73 ◯ X Example 1 Comparative AlSiC 570 — X ◯ Example 2 Comparative 4N—Al 660 17 X ◯ Example 3 Comparative AlSiC 570 90 X ◯ Example 4 - In Comparative Example 1 in which the indentation hardness of the metal layer was 50 mgf/μm2 or higher, the cracking of the ceramic substrate occurred. In Comparative Example 2 in which the aluminum bonding layer was not provided, the bondability between the metal layer and the copper bonding material deteriorated. In Comparative Example 3 in which the heat sink was formed of aluminum having a solidus temperature of higher than 650° C., the bondability between the heat sink and the copper bonding material deteriorated. In Comparative Example 4 in which the aluminum bonding layer was formed of aluminum having a solidus temperature of higher than 650° C., the bondability between the aluminum bonding layer and the copper bonding material decreased.
- On the other hand, in Examples 1 to 19, the insulating circuit substrate with a heat sink was obtained, in which the bondability between the aluminum bonding layer and the copper bonding material and the bondability between the heat sink and the copper bonding material were high, and the cracking of the ceramic substrate did not occur.
- According to the present invention, a metal layer and a heat sink can be reliably bonded to each other by solid phase diffusion bonding even when the metal layer is formed of aluminum or an aluminum alloy having a relatively low deformation resistance and a bonding surface of the heat sink is formed of aluminum or an aluminum alloy having a relatively low solidus temperature. Therefore, the present invention is industrially applicable.
- 10: INSULATING CIRCUIT SUBSTRATE
- 11: CERAMIC SUBSTRATE (INSULATING LAYER)
- 12: CIRCUIT LAYER
- 13: METAL LAYER
- 31: ALUMINUM BONDING LAYER
- 32: COPPER BONDING LAYER
- 40: INSULATING CIRCUIT SUBSTRATE WITH HEAT SINK
- 41: HEAT SINK
- 43: SKIN LAYER (BONDING SURFACE)
- 52: COPPER PLATE (COPPER BONDING MATERIAL)
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-064878 | 2017-03-29 | ||
JP2017064878 | 2017-03-29 | ||
PCT/JP2018/007605 WO2018180159A1 (en) | 2017-03-29 | 2018-02-28 | Method for producing insulated circuit board with heat sink |
Publications (2)
Publication Number | Publication Date |
---|---|
US20210134609A1 true US20210134609A1 (en) | 2021-05-06 |
US11735434B2 US11735434B2 (en) | 2023-08-22 |
Family
ID=63674825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/488,634 Active 2039-11-03 US11735434B2 (en) | 2017-03-29 | 2018-02-28 | Method for producing insulating circuit substrate with heat sink |
Country Status (7)
Country | Link |
---|---|
US (1) | US11735434B2 (en) |
EP (1) | EP3605601B1 (en) |
JP (1) | JP6958441B2 (en) |
KR (1) | KR102422070B1 (en) |
CN (1) | CN110366777B (en) |
TW (1) | TWI737894B (en) |
WO (1) | WO2018180159A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114284857A (en) * | 2021-11-25 | 2022-04-05 | 佛山华智新材料有限公司 | Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application |
US11355408B2 (en) | 2018-03-27 | 2022-06-07 | Mitsubishi Materials Corporation | Method of manufacturing insulating circuit board with heatsink |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020120188A1 (en) * | 2020-07-30 | 2022-02-03 | Rogers Germany Gmbh | Method for producing a carrier substrate and a carrier substrate produced using such a method |
WO2023058598A1 (en) * | 2021-10-06 | 2023-04-13 | デンカ株式会社 | Heat dissipation member |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3525348B2 (en) | 1992-09-29 | 2004-05-10 | 株式会社日鉱マテリアルズ | Manufacturing method of diffusion bonded sputtering target assembly |
JP3171234B2 (en) | 1997-03-26 | 2001-05-28 | 三菱マテリアル株式会社 | Ceramic circuit board with heat sink |
JPH11286704A (en) | 1998-04-02 | 1999-10-19 | Sumitomo Electric Ind Ltd | Friction member and its production |
JP3468358B2 (en) | 1998-11-12 | 2003-11-17 | 電気化学工業株式会社 | Silicon carbide composite, method for producing the same, and heat radiation component using the same |
JP4314675B2 (en) * | 1999-05-28 | 2009-08-19 | 住友電気工業株式会社 | Silicon carbide powder, composite material using the same, and manufacturing method thereof |
JP4206651B2 (en) * | 2001-06-19 | 2009-01-14 | 三菱マテリアル株式会社 | Circuit board with heat sink |
JP2003306730A (en) | 2002-04-16 | 2003-10-31 | Hitachi Metals Ltd | Al-SiC-BASED COMPOSITE AND HEAT-DISSIPATING COMPONENT |
JP3907620B2 (en) * | 2003-11-14 | 2007-04-18 | 電気化学工業株式会社 | Ceramic circuit board integrated aluminum-silicon carbide composite and manufacturing method thereof |
JP2006100770A (en) * | 2004-09-01 | 2006-04-13 | Toyota Industries Corp | Manufacturing method of substrate base plate, substrate base plate and substrate using base plate |
JP4207896B2 (en) | 2005-01-19 | 2009-01-14 | 富士電機デバイステクノロジー株式会社 | Semiconductor device |
JP5056340B2 (en) * | 2007-10-22 | 2012-10-24 | トヨタ自動車株式会社 | Semiconductor module cooling device |
EP2455991B1 (en) * | 2009-07-17 | 2017-05-10 | Denka Company Limited | Led chip assembly, led package, and manufacturing method of led package |
JP5359936B2 (en) | 2010-03-03 | 2013-12-04 | 三菱マテリアル株式会社 | Power module substrate, power module substrate manufacturing method, power module substrate with heat sink, and power module |
JP3171234U (en) | 2011-08-09 | 2011-10-20 | 正宜 田辺 | Simple greenhouse |
JP5899725B2 (en) | 2011-09-07 | 2016-04-06 | 三菱マテリアル株式会社 | Power module substrate, power module substrate manufacturing method, power module substrate with heat sink, and power module |
JP2014112732A (en) | 2012-03-30 | 2014-06-19 | Mitsubishi Materials Corp | Substrate for power module with heat sink and power module |
JP2013229579A (en) | 2012-03-30 | 2013-11-07 | Mitsubishi Materials Corp | Substrate for power module, substrate for power module having heat sink, and power module |
JP5991102B2 (en) * | 2012-09-14 | 2016-09-14 | 三菱マテリアル株式会社 | Power module substrate with heat sink, power module with heat sink, and method for manufacturing power module substrate with heat sink |
US10011093B2 (en) | 2012-09-21 | 2018-07-03 | Mitsubishi Materials Corporation | Bonding structure of aluminum member and copper member |
JP2015155108A (en) | 2014-02-21 | 2015-08-27 | 三菱電機株式会社 | Metal conjugate, waveguide for antenna, and semiconductor device |
JP6432208B2 (en) | 2014-08-18 | 2018-12-05 | 三菱マテリアル株式会社 | Method for manufacturing power module substrate, and method for manufacturing power module substrate with heat sink |
JP6327058B2 (en) * | 2014-08-18 | 2018-05-23 | 三菱マテリアル株式会社 | Power module substrate with heat sink, method of manufacturing joined body, method of manufacturing power module substrate, and method of manufacturing power module substrate with heat sink |
JP6417834B2 (en) | 2014-10-02 | 2018-11-07 | 三菱マテリアル株式会社 | Power module substrate with cooler and method for manufacturing power module substrate with cooler |
WO2016060079A1 (en) | 2014-10-16 | 2016-04-21 | 三菱マテリアル株式会社 | Substrate with cooler for power modules and method for producing same |
JP6673635B2 (en) | 2014-11-20 | 2020-03-25 | 三菱マテリアル株式会社 | Method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, method of manufacturing heat sink, and bonded body, power module substrate with heat sink, and heat sink |
JP6428327B2 (en) * | 2015-02-04 | 2018-11-28 | 三菱マテリアル株式会社 | Power module substrate with heat sink, power module, and method for manufacturing power module substrate with heat sink |
JP6332108B2 (en) * | 2015-03-30 | 2018-05-30 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
JP6696215B2 (en) | 2015-04-16 | 2020-05-20 | 三菱マテリアル株式会社 | Bonded body, power module substrate with heat sink, heat sink, and method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, and method of manufacturing heat sink |
JP6489991B2 (en) | 2015-10-02 | 2019-03-27 | ファナック株式会社 | Robot operating device having a handle for operating the robot |
-
2018
- 2018-02-28 KR KR1020197024680A patent/KR102422070B1/en active IP Right Grant
- 2018-02-28 CN CN201880012550.1A patent/CN110366777B/en active Active
- 2018-02-28 US US16/488,634 patent/US11735434B2/en active Active
- 2018-02-28 WO PCT/JP2018/007605 patent/WO2018180159A1/en unknown
- 2018-02-28 EP EP18774268.9A patent/EP3605601B1/en active Active
- 2018-03-01 TW TW107106776A patent/TWI737894B/en active
- 2018-03-09 JP JP2018043491A patent/JP6958441B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11355408B2 (en) | 2018-03-27 | 2022-06-07 | Mitsubishi Materials Corporation | Method of manufacturing insulating circuit board with heatsink |
CN114284857A (en) * | 2021-11-25 | 2022-04-05 | 佛山华智新材料有限公司 | Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application |
Also Published As
Publication number | Publication date |
---|---|
EP3605601A1 (en) | 2020-02-05 |
EP3605601B1 (en) | 2023-09-13 |
KR20190132355A (en) | 2019-11-27 |
CN110366777A (en) | 2019-10-22 |
KR102422070B1 (en) | 2022-07-15 |
US11735434B2 (en) | 2023-08-22 |
CN110366777B (en) | 2024-04-26 |
EP3605601A4 (en) | 2020-12-30 |
TWI737894B (en) | 2021-09-01 |
WO2018180159A1 (en) | 2018-10-04 |
JP2018170504A (en) | 2018-11-01 |
JP6958441B2 (en) | 2021-11-02 |
TW201841310A (en) | 2018-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9807865B2 (en) | Substrate for power modules, substrate with heat sink for power modules, and power module | |
US11735434B2 (en) | Method for producing insulating circuit substrate with heat sink | |
TWI591774B (en) | Power module substrate, power module substrate provided heat-sink, and power module | |
US9833855B2 (en) | Method for manufacturing power module substrate | |
US10199237B2 (en) | Method for manufacturing bonded body and method for manufacturing power-module substrate | |
US10319664B2 (en) | Bonded body, substrate for power module with heat sink, heat sink, method for producing bonded body, method for producing substrate for power module with heat sink, and method for producing heat sink | |
JP2019176152A (en) | Insulated circuit board with heat sink | |
JP2011035308A (en) | Radiator plate, semiconductor device, and method of manufacturing radiator plate | |
JP7081686B2 (en) | Joined body, insulated circuit board with heat sink, and heat sink | |
TW201739725A (en) | Bonded body, power module substrate, method of producing bonded body and method of producing power module substrate | |
US11355408B2 (en) | Method of manufacturing insulating circuit board with heatsink | |
TWI780113B (en) | METHOD OF MANUFACTURING CERAMIC/Al-SiC COMPOSITE MATERIAL BONDED BODY AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE WITH HEAT SINK | |
JP6756189B2 (en) | Manufacturing method for power module board with heat sink and power module board with heat sink | |
US11094606B2 (en) | Bonded body, insulated circuit board with heat sink, and heat sink |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MITSUBISHI MATERIALS CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YUMOTO, RYOUHEI;OOHIRAKI, TOMOYA;KITAHARA, TAKESHI;AND OTHERS;SIGNING DATES FROM 20190611 TO 20190613;REEL/FRAME:050161/0756 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: APPLICATION DISPATCHED FROM PREEXAM, NOT YET DOCKETED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |