US20180182614A1 - Method of depositing and etching si-containing film - Google Patents
Method of depositing and etching si-containing film Download PDFInfo
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- US20180182614A1 US20180182614A1 US15/902,794 US201815902794A US2018182614A1 US 20180182614 A1 US20180182614 A1 US 20180182614A1 US 201815902794 A US201815902794 A US 201815902794A US 2018182614 A1 US2018182614 A1 US 2018182614A1
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- 238000000151 deposition Methods 0.000 title claims abstract description 111
- 238000005530 etching Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 61
- 238000010926 purge Methods 0.000 description 21
- 239000002243 precursor Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000011800 void material Substances 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 10
- 239000000376 reactant Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000012686 silicon precursor Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Definitions
- the present disclosure relates generally to a method of repeating multiple times deposition of a silicon-containing film by plasma enhanced atomic layer deposition (PEALD) or pulsed plasma enhanced chemical vapor deposition (PPECVD), and etching only a silicon-containing film on a side wall of a recess or etching a silicon-containing film on a side wall of a recess more than a top wall of the recess, so as to fill the recess with a layer of silicon-containing film.
- PEALD plasma enhanced atomic layer deposition
- PECVD pulsed plasma enhanced chemical vapor deposition
- PPECVD/PEALD processes can provide high conformality (also referred to as “coverage”) of depositing films on a patterned surface on which multiple recesses or grooves are formed in patterns for establishing interconnects.
- the substrate temperature of PEALD processes are typically lower than that of thermal ALD, and PEALD processes are typically better than thermal ALD in terms of deposition rates and controllability, depending on the type of films.
- an embodiment of the present invention provides a method of filling, with layers of film, recesses or grooves on a patterned surface, by depositing a film by PEALD/PPECVD and etching the film on the patterned surface, wherein a film with different film quality is formed on a top wall and on a side wall of the recesses or grooves on the patterned surface.
- the deposition and etching sessions are conducted repeatedly until a desirable thickness of a target layer of film is formed.
- the etching can be in situ plasma etching (etching gas is excited in the reactor) or remote plasma etching (etching gas is excited in a remote plasma unit).
- deposition and etching are conducted in the same reactor, and alternatively, etching is conducted in a reactor different from that for deposition.
- the combination of a deposition session and an etching session can be repeated multiple times to form a desired target layer of film on a patterned surface, which fills recesses or grooves without forming a void.
- the film is a silicon nitride film. In some embodiments, the film is a silicon oxide film. In some embodiments, a combination of pulsed deposition and pulsed etching is used for forming a film, and a set of pulsed deposition and pulsed etching is repeated until recesses or grooves are filled with the desired layer of film.
- FIG. 1 is a timing chart for one cycle for depositing a SiO 2 ALD film by PEALD according to an embodiment of the present invention.
- FIG. 2 is a schematic drawing showing a reactor used for deposition and etching according to an embodiment of the present invention.
- FIG. 3 is a graph showing the relationship between RF power and a ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses.
- FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of silicon nitride films formed according to one example of the present invention.
- FIG. 5 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films.
- FIGS. 7A to 7G are schematic drawings showing deposition and etching of films according to an embodiment of the present invention.
- the present invention includes, but is not limited to, the following embodiments:
- SiO 2 film deposition conditions may be set as follows, for example:
- Substrate temperature 100-300° C.
- a desired pressure can be selected within a range of approx. 100 to 1000 Pa, and a desired flow rate of purge gas can be selected within a range of 1000 to 2500 sccm.
- FIG. 1 is one example of a timing chart of one PEALD cycle.
- purge gas is controlled to flow into the reactor and the flow is stabilized, after which purge gas will always flow within the reactor at a constant rate.
- silicon precursor is supplied with a single pulse, while oxygen reactant gas is introduced to the reactor continuously at a constant rate.
- oxygen reactant gas is introduced to the reactor continuously at a constant rate.
- RF power is applied with a single pulse.
- the silicon-containing precursor pulse and the RF power pulse do not overlap with each other.
- the reactor is always evacuated and a constant pressure is maintained. Purge gas continues to flow in even while silicon precursor is being introduced via pulsing.
- a substrate 61 is placed on a susceptor 63 in a reaction chamber 64 configured to be evacuated.
- a shower plate 62 is disposed parallel to the susceptor 63 .
- Bisdiethylaminosilane (BDEAS) as the silicon-containing precursor is introduced in pulses into the reaction chamber 64 through a valve 67 a, a line 67 , a gas inlet port 66 , and the shower plate 62 .
- O 2 is introduced continuously or in pulses into the reaction chamber 64 through a valve 70 a, a line 70 , the gas inlet port 66 , and the shower plate 62 .
- the gas inside the reaction chamber 64 is discharged through an exhaust port.
- RF power from a RF power source (not shown) is applied to the shower plate 62 , and the susceptor 63 is grounded (not shown). After the deposition session, etching is initiated.
- FIG. 2 illustrates an apparatus in which the deposition and the etching are conducted in the same reaction chamber, and purging is conducted therebetween, the deposition and the etching can be conducted in different reaction chambers, and during the intermediate period between the deposition session and the etching session, the substrate may be transferred to the next reaction chamber.
- the film deposited on a side wall of recesses or grooves on a substrate may only be etched or mainly etched in the etching session. Also, by controlling the deposition session prior to etching the film on a side wall of recesses or grooves on a substrate it is possible, during the etching session, to not etch or to only minimally etch the film deposited on a top wall of recesses or grooves on a substrate, and by repeating the deposition session and etching session in this manner, it becomes possible to fill recesses or grooves with a layer of film without forming a void therein (See FIG.
- the deposition process is conducted by setting the ratio of the RF power to a substrate (e.g., a wafer) diameter to approximately 1 W/mm 2 .
- FIGS. 7A to 7G are schematic drawings showing one embodiment of processes of a gap-filling of recesses or grooves with films.
- a first film is initially deposited in the manner as above (See FIG. 7A ), and then a first etching session is conducted in the manner also described above so almost all the film deposited on a side wall of a recess or groove is removed (See FIG. 7B ).
- a second film is then deposited in the same manner (See FIG. 7C ) and thereafter the second etching session is conducted also in the same manner (See FIG. 7D ).
- third and fourth films can be deposited (See FIG. 7E and FIG. 7F ).
- the recess or groove can be completely filled without having to form a void or gap within the layer of film.
- a silicon nitride film was deposited on a substrate having recesses or grooves, and a Capacitively Coupled Plasma (CCP) device was used as the ALD apparatus.
- CCP Capacitively Coupled Plasma
- Substrate temperature 100° C.
- Silicon-containing precursor pulse 0.5 second
- the film thickness for one cycle is set to 0.1 nm.
- Ar was also used throughout the cycle as a purge gas to flow into the reactor and the flow remained at a constant rate.
- a silicon-containing precursor is supplied with a single pulse, while nitrogen reactant gas or nitrogen and hydrogen reactant gas is introduced to the reactor continuously at a constant rate.
- RF power is applied with a single pulse.
- the silicon precursor pulse and RF power pulse do not overlap with each other.
- the reactor is always evacuated and a constant pressure is maintained. A purge gas continues to flow even when silicon-containing precursor is being introduced via pulsing. Once the silicon-containing precursor pulse stops, however, only purge gas and nitrogen reactant gas or nitrogen and hydrogen reactant gas will flow in and therefore virtually all silicon-containing precursor can be purged from the substrate surface.
- FIG. 3 is a graph showing the relationship between RF power and the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses.
- the higher the RF power applied during the deposition session becomes the more the film deposited on a top wall of recesses or grooves is etched during the etching session and the less the film deposited on a side wall of recesses or grooves is etched during the etching session.
- the ratio is approximately 0.01, which denotes virtually only the film deposited on a top wall of recesses or grooves was etched and almost none of the film deposited on a side wall of recesses or grooves was etched in an etching session.
- the ratio is approximately 6, which denotes virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched in an etching session.
- the RF power is approximately 600 W when the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses is approximately 1.
- FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films.
- STEM Scanning Transmission Electron Microscope
- FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films.
- STEM Scanning Transmission Electron Microscope
- the diameter of approximately 300 mm of the plate (wafer) was used, and thus the ratio of the RF power to plate (wafer) diameter is calculated to be approximately 1 W/mm 2 . It was also found out that by setting RF power to approximately 300 W, it is possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
- FIG. 5 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films.
- STEM Scanning Transmission Electron Microscope
- the film deposited on the side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves in an etching session.
- the substrate temperature is set at around 250° C., virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched.
- a silicon oxide film was deposited on a substrate having recesses or grooves during the deposition session and a Capacitively Coupled Plasma (CCP) device was used as the ALD apparatus.
- CCP Capacitively Coupled Plasma
- Substrate temperature 100° C.
- Silicon-containing precursor pulse 0.5 second
- the film thickness for one cycle is set to 0.1 nm.
- Ar was used throughout the cycle as a purge gas to flow into the reactor and the flow remained at a constant rate.
- a silicon-containing precursor is supplied with a single pulse, while oxygen reactant gas is introduced to the reactor continuously at a constant rate.
- RF power is applied with a single pulse.
- the silicon precursor pulse and RF power pulse do not overlap with each other.
- the reactor is always evacuated and a constant pressure is maintained. A purge gas continues to flow even when silicon-containing precursor is being introduced via pulsing. Once the silicon-containing precursor pulse stops, however, only purge gas and oxygen reactant gas will flow in and therefore virtually all silicon precursor can be purged from the substrate surface.
- a graph showing the relationship between RF power and the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses exhibits a similar profile to that of FIG. 3 . It was found in this example that the higher the RF power applied during the deposition session becomes, the more the film deposited on a top wall of recesses or grooves is etched during the etching session and the less the film deposited on a side wall of recesses or grooves is etched during the etching session.
- the ratio is approximately 0.01, which denotes virtually only the film deposited on a top wall of recesses or grooves was etched and almost none of the film deposited on a side wall of recesses or grooves was etched in an etching session.
- the ratio is approximately 6, which denotes virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched in an etching session.
- the RF power is approximately 600 W when the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses is approximately 1.
- the film deposited on side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves.
- the diameter of approximately 300 mm of the plate (wafer) was used, and thus the ratio of the RE power to plate (wafer) diameter is calculated to be approximately 1 W/mm 2 . It was also found out that by setting RE power to approximately 300 W, it is possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
- FIG. 6 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films deposited with RF power of 500 W.
- STEM Scanning Transmission Electron Microscope
- a silicon oxide film or a silicon nitride film on a substrate having recesses or grooves was then etched by an etching gas, which is activated by a Remote Plasma Unit.
- the film etching conditions were as follows:
- Substrate temperature 100° C.
- Etching gas supply time Continuously supplied during etching session
- the thickness of the film deposited on a side wall and top wall of recesses or grooves on a substrate was approximately 10 nm.
- the etching rate in this example was set at 40 nm/min and the plasma power was set at 1K-5K W. It was found out that due to different film quality between film deposited on the side wall of recesses and film deposited on the top wall of recesses, it became possible to etch the film deposited on a side wall of recesses or grooves on a substrate with no or only minimal etching of the film deposited on a top wall of recesses or grooves on a substrate.
- the etching can be either in situ plasma etching (etching gas is excited in the reactor) or remote plasma etching (etching gas is excited in a remote plasma unity). Also, the etching was conducted in a reactor different from that for deposition, and alternatively, the deposition and etching can be conducted in the same reactor. It was found out that the combination of the deposition session and etching session in the above manner can be repeated multiple times to form a desired target layer of film on a patterned surface, which fills recesses or grooves without having to form a void.
- a method of filling, with a silicon-containing film, recesses or grooves formed on a patterned surface of a substrate comprising: depositing, by PEALD or pulsed PECVD, a film with different film quality on a top wall relative to that on a side wall, of the recesses or grooves on the patterned surface; etching the film on the top wall and the side wall of the recesses or grooves on the patterned surface; and repeating the depositing and etching to satisfy a thickness of a target layer of film.
- the depositing the film with different film quality is conducted by controlling a RF power during the depositing. In an embodiment, the depositing the film with different film quality is conducted by setting a ratio of a RF power to a substrate diameter to approximately 1 W/mm 2 . In an embodiment, the depositing the film with different film quality is conducted by controlling a substrate temperature during the depositing. In an embodiment, the depositing the film with different film quality is conducted by controlling a substrate temperature during the depositing, the substrate temperature being controlled substantially or nearly at a constant temperature of around 250° C. In an embodiment, in a cycle, a purge gas is introduced to a reaction chamber to remove excess silicon-containing pre-cursor.
- a silicon-containing gas in a cycle, is introduced in a first pulse, and RF power is applied in a second pulse, wherein the first and second pulses do not overlap.
- the silicon-containing gas is amino silane gas.
- a growth rate of the silicon oxide or nitride layer is about 0.10 nm/cycle.
- the depositing comprises introducing a silicon-containing gas, the silicon-containing gas being selected from the group consisting of bisdiethylaminosilane (BDEAS), bisethylmethylaminosilane (BEMAS), trisdimethylaminosilane (3DMA), and hexakisethylaminosilane (HEAD).
- the etching is conducted by exposing the deposited film to an activated etching gas. In an embodiment, the etching is conducted by exposing the deposited film to an activated etching gas, the etching gas being activated by a remote plasma unit and introduced into a reaction chamber where the substrate is placed. In an embodiment, the etching is conducted by exposing the deposited film to an activated etching gas, the etching gas being activated by using capacitively coupled parallel electrodes in a reaction chamber. In an embodiment, a ratio of an etching rate of the film on the side wall to that of the film on the top wall is set to between 2 and 10.
- RF power is applied using capacitively coupled parallel electrodes, and a susceptor functions as a lower electrode and holds a single substrate.
- the depositing and etching are conducted in the same reaction chamber. In an embodiment, the depositing and etching are conducted in different reaction chambers.
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Abstract
Description
- This application is a divisional of U.S. patent application Ser. No. 15/382,081 filed Dec. 16, 2016, which is incorporated herein in its entirety by reference.
- The present disclosure relates generally to a method of repeating multiple times deposition of a silicon-containing film by plasma enhanced atomic layer deposition (PEALD) or pulsed plasma enhanced chemical vapor deposition (PPECVD), and etching only a silicon-containing film on a side wall of a recess or etching a silicon-containing film on a side wall of a recess more than a top wall of the recess, so as to fill the recess with a layer of silicon-containing film.
- PPECVD/PEALD processes can provide high conformality (also referred to as “coverage”) of depositing films on a patterned surface on which multiple recesses or grooves are formed in patterns for establishing interconnects. The substrate temperature of PEALD processes are typically lower than that of thermal ALD, and PEALD processes are typically better than thermal ALD in terms of deposition rates and controllability, depending on the type of films.
- Any discussion of the background art which has been included in the present disclosure is solely for the purpose of providing a context for the present invention, and it should not be taken as an admission that any or all of the discussion form part of the prior art or were known in the art at the time the invention was made.
- In recent years, methods for tailoring conformality of a film deposited on a patterned surface have been proposed by combining depositing a film by PEALD/PPECVD processes on the patterned surface and etching the film. Normally, the cycle of this combination is repeated multiple times to form a target layer on a patterned surface.
- The demand for filling recesses or grooves with a film formed on the patterned surface especially with high aspect ratios and/or narrow recesses is increasing, however, conventional depositing and etching technology may be difficult to perform gap-filling without forming a void (See
FIG. 8 as one example of this problem). Thus, development of depositing and etching technology which is capable of filling recesses or grooves with the film without forming a void becomes important. - In an aspect, an embodiment of the present invention provides a method of filling, with layers of film, recesses or grooves on a patterned surface, by depositing a film by PEALD/PPECVD and etching the film on the patterned surface, wherein a film with different film quality is formed on a top wall and on a side wall of the recesses or grooves on the patterned surface. The deposition and etching sessions are conducted repeatedly until a desirable thickness of a target layer of film is formed.
- In some embodiments, the etching can be in situ plasma etching (etching gas is excited in the reactor) or remote plasma etching (etching gas is excited in a remote plasma unit). In some embodiments, deposition and etching are conducted in the same reactor, and alternatively, etching is conducted in a reactor different from that for deposition. The combination of a deposition session and an etching session can be repeated multiple times to form a desired target layer of film on a patterned surface, which fills recesses or grooves without forming a void.
- In some embodiments, the film is a silicon nitride film. In some embodiments, the film is a silicon oxide film. In some embodiments, a combination of pulsed deposition and pulsed etching is used for forming a film, and a set of pulsed deposition and pulsed etching is repeated until recesses or grooves are filled with the desired layer of film.
- For purposes of summarizing aspects of the invention and one or more advantages achieved over the related art, certain objects and advantages of the invention are described in this disclosure. Of course, it is to be understood that not necessarily all or any such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving one or more other objects or advantages as may be taught or suggested herein. Further aspects, features and advantages of this invention will become apparent from the detailed description which follows.
- These and other objects, features, and characteristics of the system and/or method disclosed herein, as well as the methods of operation and functions of the related elements of structure and the combination of parts and economies of manufacture, will become more apparent upon consideration of the following description and the appended claims with reference to the accompanying drawings, all of which form a part of this specification, wherein like reference numerals designate corresponding parts in the various figures. It is to be expressly understood, however, that the drawings are for the purpose of illustration and description only and are not intended as a definition of the limits of the invention. As used in the specification and in the claims, the singular form of “a”, “an”, and “the” include plural referents unless the context clearly dictates otherwise.
- These and other features of this invention will now be described with reference to the drawings of preferred embodiments which are intended to illustrate and not to limit the invention. The drawings are oversimplified for illustrative purposes and are not necessarily to scale.
-
FIG. 1 is a timing chart for one cycle for depositing a SiO2 ALD film by PEALD according to an embodiment of the present invention. -
FIG. 2 is a schematic drawing showing a reactor used for deposition and etching according to an embodiment of the present invention. -
FIG. 3 is a graph showing the relationship between RF power and a ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses. -
FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of silicon nitride films formed according to one example of the present invention. -
FIG. 5 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films. -
FIG. 6 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films deposited with RF power of 500 W. -
FIGS. 7A to 7G are schematic drawings showing deposition and etching of films according to an embodiment of the present invention. -
FIG. 8 is a schematic drawing showing deposition and etching of a layer of film according to a conventional deposition and etching method. - The present invention includes, but is not limited to, the following embodiments:
- In an embodiment, SiO2 film deposition conditions may be set as follows, for example:
- Substrate temperature: 100-300° C.
- RF power (13.56 MHz): 20 to 300 W
- Film deposition pressure: 200-1000 Pa
- Flow rate of silicon-containing precursor: 300 sccm
- Flow rate of oxygen: 1000 sccm
- Flow rate of purge gas (such as Ar): Approx. 1500 sccm
- In an embodiment, a desired pressure can be selected within a range of approx. 100 to 1000 Pa, and a desired flow rate of purge gas can be selected within a range of 1000 to 2500 sccm.
-
FIG. 1 is one example of a timing chart of one PEALD cycle. First, purge gas is controlled to flow into the reactor and the flow is stabilized, after which purge gas will always flow within the reactor at a constant rate. And then, silicon precursor is supplied with a single pulse, while oxygen reactant gas is introduced to the reactor continuously at a constant rate. After the silicon-containing precursor pulse stops and the unabsorbed silicon-containing gas is purged, RF power is applied with a single pulse. The silicon-containing precursor pulse and the RF power pulse do not overlap with each other. Along with the continuous flow of purge gas, the reactor is always evacuated and a constant pressure is maintained. Purge gas continues to flow in even while silicon precursor is being introduced via pulsing. Once the silicon precursor pulse stops, however, only purge gas and oxygen reactant gas will flow in and therefore virtually all silicon-containing precursor can be purged from the substrate surface. In an embodiment, the thickness of SiO2 film achieved in one cycle is roughly completely and linearly dependent upon the film deposition temperature, where the film deposition speed rises as the film deposition temperature drops. In an embodiment, the film deposition speed is approx. 0.1 nm/cycle when the film deposition temperature is approx. 200° C. In an embodiment, oxygen reactant gas and purge gas can be introduced using pulses in the above PEALD cycle. Also, each gas need not comprise one type of gas only, but a mixture of multiple types of gases can also be used. In one embodiment, the silicon nitride film can be formed by PEALD. In another embodiment, the deposition of film can be performed by pulsed PECVD. - As illustrated in
FIG. 2 , asubstrate 61 is placed on asusceptor 63 in areaction chamber 64 configured to be evacuated. Ashower plate 62 is disposed parallel to thesusceptor 63. During the deposition session according to the sequence illustrated inFIG. 1 , Bisdiethylaminosilane (BDEAS) as the silicon-containing precursor is introduced in pulses into thereaction chamber 64 through avalve 67 a, aline 67, agas inlet port 66, and theshower plate 62. O2 is introduced continuously or in pulses into thereaction chamber 64 through avalve 70 a, aline 70, thegas inlet port 66, and theshower plate 62. The gas inside thereaction chamber 64 is discharged through an exhaust port. RF power from a RF power source (not shown) is applied to theshower plate 62, and thesusceptor 63 is grounded (not shown). After the deposition session, etching is initiated. - During the etching session, Ar is introduced into the
reaction chamber 64 through avalve 69 a, aline 69, a remote plasma unit (RPU) 68, avalve 65, thegas inlet port 66, and theshower plate 62. The etching gas is also introduced into thereaction chamber 64 through avalve 69 b, aline 69, theremote plasma unit 68, thevalve 65, thegas inlet port 66, and theshower plate 62. The etching gas is activated byRPU 68. The gas inside thereaction chamber 64 is discharged through an exhaust port. In an embodiment, the RF power may be applied using capacitively coupled parallel electrodes, and the susceptor functions as a lower electrode and holds a single substrate. - Although
FIG. 2 illustrates an apparatus in which the deposition and the etching are conducted in the same reaction chamber, and purging is conducted therebetween, the deposition and the etching can be conducted in different reaction chambers, and during the intermediate period between the deposition session and the etching session, the substrate may be transferred to the next reaction chamber. - By controlling the deposition session prior to etching the film on a side wall of recesses or grooves on a substrate, the film deposited on a side wall of recesses or grooves on a substrate may only be etched or mainly etched in the etching session. Also, by controlling the deposition session prior to etching the film on a side wall of recesses or grooves on a substrate it is possible, during the etching session, to not etch or to only minimally etch the film deposited on a top wall of recesses or grooves on a substrate, and by repeating the deposition session and etching session in this manner, it becomes possible to fill recesses or grooves with a layer of film without forming a void therein (See
FIG. 8 for background art of a layer of film formed in recesses or grooves with a void). In one embodiment, it is possible to deposit a film with different film quality on a top wall and on a side wall of recesses and by doing so it becomes possible to conduct the etching session to selectively etch the film on a side wall of recesses or grooves with no etching or only minimal etching of the film deposited on a top wall of recesses or grooves on a substrate. - In one embodiment, it becomes possible to deposit a film with different film quality on a top wall and on a side wall of recesses by controlling RF power applied. In another embodiment, the deposition process is conducted by setting the ratio of the RF power to a substrate (e.g., a wafer) diameter to approximately 1 W/mm2.
- In one embodiment, the deposition of the film with different film quality is conducted by controlling a substrate temperature during the deposition. In another embodiment, the substrate temperature is controlled substantially or nearly at a constant temperature of around 250° C.
-
FIGS. 7A to 7G are schematic drawings showing one embodiment of processes of a gap-filling of recesses or grooves with films. A first film is initially deposited in the manner as above (SeeFIG. 7A ), and then a first etching session is conducted in the manner also described above so almost all the film deposited on a side wall of a recess or groove is removed (SeeFIG. 7B ). And a second film is then deposited in the same manner (SeeFIG. 7C ) and thereafter the second etching session is conducted also in the same manner (SeeFIG. 7D ). In this way, third and fourth films can be deposited (SeeFIG. 7E andFIG. 7F ). Finally, by conducting a last deposition of the film, the recess or groove can be completely filled without having to form a void or gap within the layer of film. - The above method becomes possible by depositing a film with different film quality on a top wall and on a side wall of recesses during the deposition and then etching the film on a side wall of recesses or grooves with no etching or only minimal etching of the film deposited on a top wall of recesses or grooves on a substrate. As the following examples show it is found out that depositing a film with different film quality on a top wall and on a side wall of recesses during the deposition is possible by controlling RF power or substrate temperature.
- The present invention will be explained in detail with reference to specific examples which are not intended to limit the present invention. The numerical numbers applied in specific examples may be modified by a range of at least ±50%, wherein the endpoints of the ranges may be included or excluded.
- Deposition of a Silicon Nitride Film
- In this example, a silicon nitride film was deposited on a substrate having recesses or grooves, and a Capacitively Coupled Plasma (CCP) device was used as the ALD apparatus. The film deposition conditions were as follows:
- Substrate temperature: 100° C.
- Film deposition pressure: 1.0 Torr
- Silicon-containing precursor: BDEAS
- Silicon-containing precursor pulse: 0.5 second
- Flow rate of nitrogen or nitrogen and hydrogen: 1000 sccm
- Flow rate of purge gas (Ar): 1000 sccm
- RF power (13.56 MHz): 100-900 W
- The film thickness for one cycle is set to 0.1 nm. In depositing a silicon nitride film, Ar was also used throughout the cycle as a purge gas to flow into the reactor and the flow remained at a constant rate. A silicon-containing precursor is supplied with a single pulse, while nitrogen reactant gas or nitrogen and hydrogen reactant gas is introduced to the reactor continuously at a constant rate. After the silicon-containing precursor pulse stops and the unabsorbed silicon-containing gas is purged, RF power is applied with a single pulse. The silicon precursor pulse and RF power pulse do not overlap with each other. Along with the continuous flow of purge gas, the reactor is always evacuated and a constant pressure is maintained. A purge gas continues to flow even when silicon-containing precursor is being introduced via pulsing. Once the silicon-containing precursor pulse stops, however, only purge gas and nitrogen reactant gas or nitrogen and hydrogen reactant gas will flow in and therefore virtually all silicon-containing precursor can be purged from the substrate surface.
-
FIG. 3 is a graph showing the relationship between RF power and the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses. - As can be seen in
FIG. 3 , it was found that the higher the RF power applied during the deposition session becomes, the more the film deposited on a top wall of recesses or grooves is etched during the etching session and the less the film deposited on a side wall of recesses or grooves is etched during the etching session. When performing the deposition session with the RF power set at around 900 W, the ratio is approximately 0.01, which denotes virtually only the film deposited on a top wall of recesses or grooves was etched and almost none of the film deposited on a side wall of recesses or grooves was etched in an etching session. On the other hand, when performing the deposition session with RF power set at around 180 W, the ratio is approximately 6, which denotes virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched in an etching session. As inFIG. 3 , the RF power is approximately 600 W when the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses is approximately 1. -
FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films. As can be seen inFIG. 4 , when performing the deposition session with the RF power set at 700 W, almost all of the film deposited on a top wall of recesses or grooves was etched but almost none of the film deposited on a side wall of recesses or grooves was etched. When performing the deposition session with the RF power set at 500 W, the film deposited on a top wall of recesses or grooves was more predominantly etched than that of the side wall of recesses or grooves. When performing the deposition session with the RF power set at 300 W, the film deposited on the side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves. -
FIG. 4 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films. As can be seen inFIG. 4 , when performing the etching session with the RF power set at 700 W, almost all of the film deposited on a top wall of recesses or grooves was etched but almost none of the film deposited on a side wall of recesses or grooves was etched. When performing the etching session with the RF power set at 500 W, the film deposited on a top wall of recesses or grooves was more predominantly etched than that of the side wall of recesses or grooves. When performing the etching session with the RF power set at 300 W, the film deposited on the side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves. - It was found out that it becomes possible to deposit a film with different film quality on a top wall and on a side wall of recesses by controlling RF power applied during the deposition session. In this example, the diameter of approximately 300 mm of the plate (wafer) was used, and thus the ratio of the RF power to plate (wafer) diameter is calculated to be approximately 1 W/mm2. It was also found out that by setting RF power to approximately 300 W, it is possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
-
FIG. 5 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films. As can be seen inFIG. 5 , when performing the deposition session with the substrate temperature set at 500° C., the film deposited on a top wall and on a side wall of recesses or grooves was roughly equally etched in an etching session. When performing the deposition session with the substrate temperature set at 450° C., the film deposited on the side wall of recesses or grooves was more etched than that of the top wall of recesses or grooves in an etching session. When performing the deposition session with the substrate temperature set at 300° C., the film deposited on the side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves in an etching session. Although not shown inFIG. 5 , it was found out that when the substrate temperature is set at around 250° C., virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched. - It was also found out that it becomes possible to deposit a film with different film quality on a top wall and on a side wall of recesses by controlling the substrate temperature during the deposition session. It was also found out that by setting the substrate temperature to approximately 300° C., preferably to approximately 250° C., it becomes possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
- Deposition of a Silicon Oxide Film
- A silicon oxide film was deposited on a substrate having recesses or grooves during the deposition session and a Capacitively Coupled Plasma (CCP) device was used as the ALD apparatus. The film deposition conditions were as follows:
- Substrate temperature: 100° C.
- Film deposition pressure: 1.0 Torr
- Silicon-containing precursor: BDEAS
- Silicon-containing precursor pulse: 0.5 second
- Flow rate of oxygen: 1000 sccm
- Flow rate of purge gas (Ar): 1000 sccm
- RF power (13.56 MHz): 100-900 W
- The film thickness for one cycle is set to 0.1 nm. In depositing a silicon oxide film, Ar was used throughout the cycle as a purge gas to flow into the reactor and the flow remained at a constant rate. A silicon-containing precursor is supplied with a single pulse, while oxygen reactant gas is introduced to the reactor continuously at a constant rate. After the silicon-containing precursor pulse stops and the unabsorbed silicon-containing gas is purged, RF power is applied with a single pulse. The silicon precursor pulse and RF power pulse do not overlap with each other. Along with the continuous flow of purge gas, the reactor is always evacuated and a constant pressure is maintained. A purge gas continues to flow even when silicon-containing precursor is being introduced via pulsing. Once the silicon-containing precursor pulse stops, however, only purge gas and oxygen reactant gas will flow in and therefore virtually all silicon precursor can be purged from the substrate surface.
- Although not shown in this example, a graph showing the relationship between RF power and the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses exhibits a similar profile to that of
FIG. 3 . It was found in this example that the higher the RF power applied during the deposition session becomes, the more the film deposited on a top wall of recesses or grooves is etched during the etching session and the less the film deposited on a side wall of recesses or grooves is etched during the etching session. When performing the deposition session with the RF power set at around 900 W, the ratio is approximately 0.01, which denotes virtually only the film deposited on a top wall of recesses or grooves was etched and almost none of the film deposited on a side wall of recesses or grooves was etched in an etching session. On the other hand, when performing the deposition session with the RF power set at around 180 W, the ratio is approximately 6, which denotes virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched in an etching session. The RF power is approximately 600 W when the ratio of the wet etching rate (nm/min) of a side wall of recesses to the wet etching rate (nm/min) of a top wall of recesses is approximately 1. As in example 1, when performing the deposition session with the RF power set at 300 W, the film deposited on side wall of recesses or grooves was more predominantly etched than that of the top wall of recesses or grooves. - It was found out in this example that it becomes possible to deposit a film with different film quality on a top wall and on a side wall of recesses by controlling RF power applied during the deposition session. In this example, the diameter of approximately 300 mm of the plate (wafer) was used, and thus the ratio of the RE power to plate (wafer) diameter is calculated to be approximately 1 W/mm2. It was also found out that by setting RE power to approximately 300 W, it is possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
-
FIG. 6 shows Scanning Transmission Electron Microscope (STEM) images of cross-sectional views of the silicon nitride films deposited with RF power of 500 W. As can be seen inFIG. 6 , when performing the deposition session with the substrate temperature set at 410° C., the film deposited on the side wall of recesses or grooves was more etched than that of the top wall of recesses or grooves in an etching session. When performing the deposition session with the substrate temperature set at 260° C., virtually only the film deposited on a side wall of recesses or grooves was etched and almost none of the film deposited on a top wall of recesses or grooves was etched in an etching session. Although not shown inFIG. 6 , the same was true when the substrate temperature is set at around 250° C. - It was also found out that it becomes possible to deposit a film with different film quality on a top wall and on a side wall of recesses by controlling the substrate temperature during the deposition session. It was also found out that by setting the substrate temperature to approximately 300° C., preferably to approximately 250° C., it becomes possible to fill recesses or grooves with film, repeating deposition and etching sessions in this way, without forming a void.
- Etching of a Silicon Oxide or Silicon Nitride Film
- A silicon oxide film or a silicon nitride film on a substrate having recesses or grooves was then etched by an etching gas, which is activated by a Remote Plasma Unit. The film etching conditions were as follows:
- Substrate temperature: 100° C.
- Film deposition pressure: 1.0-10.0 Torr
- Etching gas: NF3, NF3+NH3 or NF3+O2
- Flow rate of etching gas: 10-200 sccm
- Flow rate of purge gas (Ar): 1-10 slm
- RF power: 1K-5K W
- Etching gas supply time: Continuously supplied during etching session
- Etching rate: 40 nm/min
- After the deposition of different film quality by ALD, the thickness of the film deposited on a side wall and top wall of recesses or grooves on a substrate was approximately 10 nm. The etching rate in this example was set at 40 nm/min and the plasma power was set at 1K-5K W. It was found out that due to different film quality between film deposited on the side wall of recesses and film deposited on the top wall of recesses, it became possible to etch the film deposited on a side wall of recesses or grooves on a substrate with no or only minimal etching of the film deposited on a top wall of recesses or grooves on a substrate.
- The etching can be either in situ plasma etching (etching gas is excited in the reactor) or remote plasma etching (etching gas is excited in a remote plasma unity). Also, the etching was conducted in a reactor different from that for deposition, and alternatively, the deposition and etching can be conducted in the same reactor. It was found out that the combination of the deposition session and etching session in the above manner can be repeated multiple times to form a desired target layer of film on a patterned surface, which fills recesses or grooves without having to form a void.
- In an embodiment, there is provided a method of filling, with a silicon-containing film, recesses or grooves formed on a patterned surface of a substrate, the method comprising: depositing, by PEALD or pulsed PECVD, a film with different film quality on a top wall relative to that on a side wall, of the recesses or grooves on the patterned surface; etching the film on the top wall and the side wall of the recesses or grooves on the patterned surface; and repeating the depositing and etching to satisfy a thickness of a target layer of film.
- In an embodiment, the depositing the film with different film quality is conducted by controlling a RF power during the depositing. In an embodiment, the depositing the film with different film quality is conducted by setting a ratio of a RF power to a substrate diameter to approximately 1 W/mm2. In an embodiment, the depositing the film with different film quality is conducted by controlling a substrate temperature during the depositing. In an embodiment, the depositing the film with different film quality is conducted by controlling a substrate temperature during the depositing, the substrate temperature being controlled substantially or nearly at a constant temperature of around 250° C. In an embodiment, in a cycle, a purge gas is introduced to a reaction chamber to remove excess silicon-containing pre-cursor. In an embodiment, in a cycle, a silicon-containing gas is introduced in a first pulse, and RF power is applied in a second pulse, wherein the first and second pulses do not overlap. In an embodiment, the silicon-containing gas is amino silane gas. In an embodiment, a growth rate of the silicon oxide or nitride layer is about 0.10 nm/cycle. In an embodiment, the depositing comprises introducing a silicon-containing gas, the silicon-containing gas being selected from the group consisting of bisdiethylaminosilane (BDEAS), bisethylmethylaminosilane (BEMAS), trisdimethylaminosilane (3DMA), and hexakisethylaminosilane (HEAD). In an embodiment, the etching is conducted by exposing the deposited film to an activated etching gas. In an embodiment, the etching is conducted by exposing the deposited film to an activated etching gas, the etching gas being activated by a remote plasma unit and introduced into a reaction chamber where the substrate is placed. In an embodiment, the etching is conducted by exposing the deposited film to an activated etching gas, the etching gas being activated by using capacitively coupled parallel electrodes in a reaction chamber. In an embodiment, a ratio of an etching rate of the film on the side wall to that of the film on the top wall is set to between 2 and 10. In an embodiment, RF power is applied using capacitively coupled parallel electrodes, and a susceptor functions as a lower electrode and holds a single substrate. In an embodiment, the depositing and etching are conducted in the same reaction chamber. In an embodiment, the depositing and etching are conducted in different reaction chambers.
- With respect to the use of any plural and/or singular terms herein, those having skill in the art can translate from the plural to the singular and/or from the singular to the plural as is appropriate to the context.
- Although the system(s) and/or method(s) of this disclosure have been described in detail for the purpose of illustration based on what is currently considered to be the most practical and preferred implementations, it is to be understood that such detail is solely for that purpose and that the disclosure is not limited to the disclosed implementations, but, on the contrary, is intended to cover modifications and equivalent arrangements that are within the spirit and scope of the appended claims. For example, it is to be understood that the present disclosure contemplates that, to the extent possible, one or more features of any implementation can be combined with one or more features of any other implementation.
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