US20170309501A1 - Substrate treatment apparatus and substrate treatment method - Google Patents
Substrate treatment apparatus and substrate treatment method Download PDFInfo
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- US20170309501A1 US20170309501A1 US15/254,505 US201615254505A US2017309501A1 US 20170309501 A1 US20170309501 A1 US 20170309501A1 US 201615254505 A US201615254505 A US 201615254505A US 2017309501 A1 US2017309501 A1 US 2017309501A1
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- substrate
- housing
- solution
- phosphoric acid
- treatment apparatus
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- 239000000758 substrate Substances 0.000 title claims abstract description 145
- 238000011282 treatment Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 219
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 112
- 238000009835 boiling Methods 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 101
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 41
- 239000000377 silicon dioxide Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 230000014509 gene expression Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 150000003016 phosphoric acids Chemical class 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/005—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material incorporating means for heating or cooling the liquid or other fluent material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/09—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating separate articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/34—Applying different liquids or other fluent materials simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Definitions
- Embodiments of the present invention relate to a substrate treatment apparatus and a substrate treatment method.
- the silica concentration is easily saturated and the silica may deposit to the substrate immersed in the phosphoric acid solution.
- FIG. 1 is a schematic view showing a structure of a substrate treatment apparatus according to a first embodiment.
- FIG. 2 is a schematic view showing an inside of an inner housing.
- FIG. 3 is a schematic perspective view showing a structure of a pipe.
- FIG. 4 is a sectional view of a substrate which is an object of etching.
- FIG. 5 is a distribution graph of a flow velocity of phosphoric acid solution in the inner housing.
- FIG. 6 is a graph showing a relationship between Reynolds number and a diameter of air bubbles.
- FIG. 7 is a graph showing a vapor pressure curve with 85% by weight of the phosphoric acid solution.
- FIG. 8 is a graph showing a relationship between phosphoric acid concentration and vapor pressure.
- FIG. 9 is a graph showing an example of a relationship between a ratio of an inside diameter A 1 and a diameter of an opening, and a boiling point elevation of a phosphoric acid solution 30 .
- FIG. 11 shows a modification example of the substrate treatment apparatus according to the second embodiment.
- FIG. 12 shows another modification example of the substrate treatment apparatus according to the second embodiment.
- FIG. 1 is a schematic view showing a structure of a substrate treatment apparatus according to a first embodiment.
- a substrate treatment apparatus 1 is a wet etching apparatus which removes a silicon nitride film (not shown in FIG. 1 ) in a substrate 20 with a solution 30 (henceforth phosphoric acid solution) containing phosphoric acid.
- the substrate treatment apparatus 1 includes a housing 11 , a circulation path 12 , a heater 13 , a supply unit 14 , a pump 15 , a filter 16 and a lifter 17 .
- the housing 11 has an inner housing 111 and an outer housing 112 .
- the inner housing 111 is formed in the box type which has an upper opening 111 a.
- the inner housing 111 stores the phosphoric acid solution 30 , i.e., the etching solution of the silicon nitride film in its inside.
- a temperature, phosphoric acid concentration, and silica concentration of the phosphoric acid solution 30 stored inside the inner housing 111 are optimized to etching of the silicon nitride film in the substrate 20 .
- the inner housing 111 can store the substrate 20 of a wafer form (circular form). If the substrate 20 is immersed in the phosphoric acid solution 30 , the silicon nitride film in the substrate 20 will dissolve in the phosphoric acid solution 30 , and will be removed.
- the outer housing 112 has an upper opening 112 a which surrounds all-round the upper opening 111 a of the inner housing 111 .
- the outer housing 112 collects the phosphoric acid solution 30 overflowing from the upper opening 111 a of the inner housing 111 .
- the circulation path 12 communicates with the bottom of the outer housing 112 and the bottom of the inner housing 111 , and circulates the phosphoric acid solution 30 to the housing 11 . Specifically, the circulation path 12 flows back the phosphoric acid solution 30 which flows out to the outer housing 112 to the inner housing 111 . In process of this flowing back, the phosphoric acid solution 30 goes through the heater 13 , the pump 15 and the filter 16 .
- a heating control part 13 a adjusts the heating temperature of the heater 13 so that the phosphoric acid solution 30 may be heated at a constant temperature.
- the phosphoric acid solution 30 heated by the heater 13 i.e., heated solution is supplied to the inside of the inner housing 111 via the filter 16 .
- the supply unit 14 is located above the outer housing 112 .
- the supply unit 14 supplies water to the outer housing 112 .
- the concentration of the phosphoric acid solution 30 collected in the outer housing 112 may be changed due to boil and etching in the inner housing 111 . Therefore, in order to adjust the concentration of the phosphoric acid solution 30 which flows back to the inner housing 111 to the optimal concentration for alternative etching of the silicon nitride film, a water 40 is supplied from the supply unit 14 .
- the supply unit 14 may supply phosphoric acid to the outer housing 112 instead of the water 40 for the above-described concentration adjustment.
- the supply unit 14 may supply phosphoric acid solution to the outer housing 112 , wherein the supply phosphoric acid solution is adjusted beforehand to the optimal concentration for the etching of the silicon nitride film, i.e., the same phosphoric acid concentration as the phosphoric acid solution 30 initially stored in the inner housing 111 (before the heated solution is supplied).
- the temperature of water, the phosphoric acid, or the phosphoric acid solution is preferably lower than that of the phosphoric acid solution 30 stored in the inner housing 111 so that the bumping may not occur in the outer housing 112 .
- the pump 15 is located upstream from the heater 13 on the circulation path 12 .
- the pump 15 draws the phosphoric acid solution 30 from the outer housing 112 , thereby the phosphoric acid solution 30 collected by the outer housing 112 moves to the heater 13 .
- the pump 15 pressurizes the phosphoric acid solution 30 heated by the heater 13 , thereby this phosphoric acid solution 30 is supplied to the inner housing 111 .
- the filter 16 is located downstream from the heater 13 on the circulation path 12 .
- the filter 16 removes a particle contained in the phosphoric acid solution 30 in the circulation path 12 .
- this particle also contains the silica which deposited by the etching of the substrate 20 .
- the filter may be located upstream from the heater 13 on the circulation path 12 .
- FIG. 2 is a schematic view showing the inside of the inner housing 111 .
- the lifter 17 holds a plurality of substrates 20 located in a row at the interval D 1 (a first interval). Moreover, the lifter 17 moves these substrates 20 in a vertical direction to the inner housing 111 . This up and down move makes it possible to automatically immerse the substrates 20 before the etching into the phosphoric acid solution 30 stored in the inner housing 111 and to automatically take out the substrates 20 after the etching from the inner housing 111 .
- the interval between any two of the neighboring openings 121 a along the above-described row is preferably equal to an interval D 1 of the substrates 20 .
- FIG. 4 is a sectional view of the substrate 20 which is an object of the etching.
- This substrate 20 is a semiconductor substrate for manufacturing a laminated type memory on which an electrode layer has been laminated.
- the substrate 20 has a silicon substrate 21 and a lamination film 22 .
- a silicon oxide film 221 and a silicon nitride film 222 are alternately laminated.
- the substrate 20 has a trench 23 which penetrates the lamination film 22 .
- the phosphoric acid solution 30 stored in the inner housing 111 permeates into the lamination film 22 from the trench 23 .
- the silicon nitride film 222 is removed.
- the silica concentration becomes high.
- An electrode layer is formed in a part where the silicon nitride film 222 has been removed by another processing.
- the phosphoric acid solution 30 overflowing from the inner housing 111 is collected by the outer housing 112 .
- the phosphoric acid solution 30 collected by the outer housing 112 is drawn with the pump 15 , and is sent to the heater 13 .
- the heater 13 heats the phosphoric acid solution 30 over the normal boiling point.
- the phosphoric acid solution 30 heated by the heater 13 is discharged by the pump 15 , from the opening 121 a of the pipe 121 to the inside of the inner housing 111 .
- the pump 15 is pressurizing the phosphoric acid solution 30 so that the phosphoric acid solution 30 does not boil in the pipe 121 .
- the flow of the phosphoric acid solution 30 and the air bubbles 50 are generated (refer to FIG. 2 ).
- FIG. 5 is a distribution graph of a flow velocity of the phosphoric acid solution 30 in the inner housing 111 .
- FIG. 5 shows a distribution of the flow velocity with the air bubbles 50 , and a distribution of the flow velocity without the air bubbles 50 .
- FIG. 5 a horizontal axis shows a horizontal position in the inner housing 111 when the inner housing 111 is seen from the side (refer to FIG. 1 ).
- FIG. 5 shows the distribution of the flow velocity of the phosphoric acid solution 30 on the substrate 20 (wafer).
- the flow velocity of the phosphoric acid solution 30 on the substrate 20 is small.
- the quantity of the silicon nitride film 222 which dissolves into the phosphoric acid solution 30 will increase.
- the amount of the silica dissolved into the phosphoric acid solution 30 will increase. Therefore, the silica deposits easily within the trench 23 , and if the flow velocity of the phosphoric acid solution 30 is small, the deposit of the silica will be promoted in the trench 23 .
- the flow velocity of the phosphoric acid solution 30 becomes large compared with the case where there are not the air bubbles 50 . That is, the flow of the phosphoric acid solution 30 is accelerated by the air bubbles 50 . Thereby, removal of the silica from the substrate 20 is promoted. That is, discharge of the silica dissolved in the trench 23 is promoted by the flow velocity of the phosphoric acid solution 30 near the surface of the substrate 20 .
- a diameter d and a speed V of the air bubbles 50 can be calculated by using a following equation of motion (1) and an approximate expression (2) of a following drag C.
- “g” indicated at the following expression (1) shows gravity acceleration
- “Re” indicated at the following expression (2) shows Reynolds number. This Reynolds number can be calculated by using a following expression (3).
- “v” indicated at the expression (3) shows the kinetic viscosity of phosphoric acid.
- FIG. 6 shows a graph which shows a relationship between the Reynolds number and the diameter d of the air bubbles 50.
- the Reynolds number will be larger than 5. If the Reynolds number is larger than 5, Karman vortex will occur. If the Karman vortex occurs, various flows will newly occur after the air bubbles 50 have passed, thereby the phosphoric acid solution 30 is agitated. Therefore, the removal of the silica from the substrate 20 can further be promoted.
- the diameter d of the air bubbles 50 is preferably larger than 0.5 mm.
- the interval D 1 (refer to FIG. 2 ) of the substrates 20 is preferably larger than at least 0.5 mm.
- the diameter d of the air bubbles 50 is preferably smaller than the interval D 1 .
- the heater 13 heats the phosphoric acid solution 30 which circulates through the circulation path 12 over the normal boiling point.
- the phosphoric acid solution 30 with 85% by weight boils at about 163 deg C. If water is added to this phosphoric acid solution 30 , the normal boiling point will fall. However, when the pressure over the external pressure is applied to this phosphoric acid solution 30 in the circulation path 12 , the phosphoric acid solution 30 can be hard to boil in the circulation path 12 .
- a pressure P applied to the phosphoric acid solution 30 in the circulation path 12 can be calculated by a following expression (4) by using Bernoulli's theorem.
- “p” shows phosphoric acid density
- “v” shows the flow velocity of the phosphoric acid solution 30 in the circulation path 12 .
- the pressure P applied to the phosphoric acid solution 30 is 0.8 kPa. This pressure is applied by using the pump 15 .
- FIG. 7 is a graph showing a vapor pressure curve with 85% by weight of phosphoric acid solution. According to the graph shown in FIG. 7 , when the phosphoric acid solution 30 flows through the circulation path 12 on condition that the pressure is 0.8 kPa and the flow velocity is 1.0 m/s, it is presumed that the boiling point goes up about 0.3 deg C.
- FIG. 8 is a graph showing a relationship between the phosphoric acid concentration and vapor pressure.
- the vapor pressure is 0.8 kPa, according to the graphs shown in FIG. 7 and FIG. 8 , respectively, it is presumed that the phosphoric acid solution 30 does not boil in the circulation path 12 even if phosphoric acid concentration falls 0.15% by weight.
- the pump 15 controls the pressure applied to the phosphoric acid solution 30 on the circulation path 12 so as to be higher than the pressure applied to the phosphoric acid solution 30 in the inner housing 111 , the phosphoric acid solution 30 heated at over the normal boiling point cannot be boiled on the circulation path 12 , but can be boiled at the inner housing 111 . Thereby, the air bubbles 50 are not generated in the circulation path 12 , but the phosphoric acid solution 30 can smoothly flow through in the circulation path 12 , and can generate the air bubbles 50 in the inner housing 111 .
- the pressure applied to the phosphoric acid solution 30 on the circulation path 12 can be adjusted also by adjusting a ratio A 1 /A 2 between an inside diameter A 1 of the pipe 121 and a diameter of the opening 121 a shown in FIG. 3 .
- FIG. 9 is a graph showing an example of a relationship between the ratio of the inside diameter A 1 of the pipe 121 to the diameter of the opening 121 a, and boiling point elevation of the phosphoric acid solution 30 . If the ratio between the inside diameter A 1 and the diameter is nearly 1, it will become difficult to increase inner pressure of the pipe 121 . Therefore, according to FIG. 9 , for example, when the ratio A 1 /A 2 is less than 3, change of the boiling point stays within 2.7 deg C rise. On the other hand, when the ratio A 1 /A 2 is ten or more, the inner pressure of the pipe 121 is high, but the pressure loss of the pipe 121 is large, thereby there is a high possibility of failing to supply the phosphoric acid solution 30 .
- the ratio A 1 /A 2 it is desirable for the ratio A 1 /A 2 to be within the range of 3-10.
- the pressure added to the phosphoric acid solution 30 is controlled within the pipe 121 , and the phosphoric acid solution 30 heated by the heater 13 can be boiled when discharged to the inner housing 111 from the opening 121 a. That is, the air bubbles 50 can be generated in the inner housing 111 .
- the phosphoric acid solution was supplied from the opening 121 a of the pipe 121 to the inner housing 111 .
- this phosphoric acid solution was heated so as to boil at 160 deg C, and the inner housing 111 stored the phosphoric acid solution 30 whose concentration adjustment was carried out at about 160 deg C.
- the air bubbles 50 were generated, whose diameters d were within the range of 0.5 mm to 50 mm.
- the substrate 20 was immersed into the boiling phosphoric acid solution during a predetermined period.
- the phosphoric acid solution was supplied from the opening 121 a of the pipe 121 to the inner housing 111 .
- the temperature adjustment of this phosphoric acid solution was carried out so as not to boil at 160 deg C, and the inner housing 111 stored the phosphoric acid solution 30 of which concentration adjustment was carried out at 160 deg C.
- the substrate 20 was immersed into the phosphoric acid solution which has not been boiled during the predetermined period.
- the above-described treatments were carried out to the substrate 20 , and after that, the treated substrate 20 was observed by SEM. As a result, the deposit of the silica was observed on a part of the substrate 20 . This result is considered to be due to the flow of the phosphoric acid solution which has not been accelerated by the air bubbles 50 in the inner housing 111 .
- the air bubbles 50 are generated in the inner housing 111 by supplying the phosphoric acid solution heated at over the normal boiling point to the inner housing 111 .
- These air bubbles 50 accelerate the flow velocity of the phosphoric acid solution flowing in the inner housing 111 , and thereby the discharge effect of the silica depositing to the substrate 20 can improve.
- the air bubbles 50 may be generated by boil of the phosphoric acid solution 30 and also may be generated by supplying high-pressure air and inactive gas from the lower part of the inner housing 111 .
- the phosphoric acid solution 30 heated by the heater 13 cannot be boiled in the circulation path 12 , but can be boiled in the inner housing 111 . Thereby, circulation of the phosphoric acid solution 30 can be made smooth.
- FIG. 10 is a schematic view showing a structure of a main part of a substrate treatment apparatus according to a second embodiment.
- constituent parts similar to the above-described substrate treatment apparatus 1 according to the first embodiment are denoted by the same reference numerals and will not be described in detail here.
- the substrate treatment apparatus 2 in addition to a component of the substrate treatment apparatus 1 according to the first embodiment, the substrate treatment apparatus 2 according to the present embodiment newly includes a plate member 18 .
- the plate member 18 faces a substrate 20 a (a first substrate 20 ) and a substrate 20 n (an Nth substrate), respectively.
- the substrate 20 a and the substrate 20 n are located at both ends of a row of the substrates consisting of the N (where N is a natural number equal to 2 or more) substrates 20 .
- the material of the plate member 18 is, for example, quartz, or Teflon (registered trademark) etc. which has the tolerance for high-temperature (for example, 160 deg C) phosphoric acid.
- the plate member 18 may be a dummy substrate (wafer) which is not an object of etching.
- the substrate 20 a and the substrate 20 n even though one surface respectively faces the substrates 20 b and 20 m which neighbor the substrates 20 a and 20 n, if the other surface does not face other substrates, the flow of the air bubbles 50 , in other words, the movement speed thereof will differ between the two surfaces of the substrates 20 a and 20 n. Thereby the substrates 20 a and 20 n are likely to be exposed to stress. If this stress is great, the substrates 20 a and 20 n may be damaged.
- the plate member 18 functions as a current plate to uniform the flow of the air bubbles 50 on both surfaces of the substrates 20 a and 20 n.
- an interval D 2 between the plate member 18 and the substrate 20 a, and an interval D 2 between the plate member 18 and substrate 20 n are preferably almost equal to the interval D 1 of the substrates 20 .
- the interval D 1 almost equal to the interval D 2 is defined as the relationship between the interval D 1 and the interval D 2 where the interval D 1 and the interval D 2 may be equal or the difference thereof is within a range where the substrates 20 a and 20 n are not at risk of damage.
- a plane area of the plate member 18 is preferably larger than that of the substrate 20 a, and also that of the substrate 20 n.
- the plate member 18 is formed in a rectangle.
- the plate member 18 may be a circular form same as the substrate 20 , or may be other forms.
- the surfaces (which face the substrates 20 a and 20 n, respectively) of the plate members 18 are preferable to be flat.
- the plate member 18 is attached to the lifter 17 .
- the plate member 18 may be located in the inner housing 111 .
- the plate members 18 are attached to internal surfaces 111 b of the inner housing 111 , wherein the surfaces 111 b face the substrates 20 a and 20 n, respectively.
- the relationship of almost equality between the interval D 1 and the interval D 2 allows that the plate member 18 of the substrate treatment apparatus 2 a also functions as the above-described current plate.
- the internal surfaces 111 b themselves of the inner housing 111 may function as the above-described current plate.
- an interval D 3 between the substrate 20 a and one of the internal surfaces 111 b facing this substrate 20 a, and an interval D 3 between the substrate 20 n and the other of the internal surfaces 111 b facing this substrate 20 n, are almost equal to the interval D 1 , respectively.
- the phosphoric acid solution 30 heated at over the normal boiling point is supplied to the inner housing 111 , same as the first embodiment.
- the air bubbles 50 generated at this time can improve the discharge effect of the silica depositing to the substrate 20 .
- the air bubbles 50 may be generated by boil of the phosphoric acid solution 30 and also may be generated by supplying the high-pressure air and the inactive gas from the lower part of the inner housing 111 .
- the plate member 18 or the internal surface 111 b of the inner housing 111 functions as the current plate which arranges the flow of the air bubbles 50 on both surfaces of the substrates 20 located at the both ends of the row of the substrates. Thereby, the substrates 20 can be hard to damage.
- substrate treatment apparatuses described above are used to treat the substrate of a laminated type memory.
- these substrate treatment apparatuses can be also applied to treatment of other substrates, for example, a glass substrate for liquid crystal displays, an optical disc substrate, and a substrate for MEMS (Micro Electro Mechanical Systems).
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Abstract
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-86377, filed on Apr. 22, 2016; the entire contents of which are incorporated herein by reference.
- Embodiments of the present invention relate to a substrate treatment apparatus and a substrate treatment method.
- A substrate including a silicon nitride film and a silicon oxide film may be carried out etching of the silicon nitride film alternatively to the silicon oxide film. In this case, phosphoric acid solution is generally used as an etching solution. In such etching, if a silicon compound is added to the phosphoric acid solution, silica concentration in the phosphoric acid solution becomes high, and it can improve the selection ratio of the silicon nitride film to the silicon oxide film.
- However, if silicon concentration is too high, the silica concentration is easily saturated and the silica may deposit to the substrate immersed in the phosphoric acid solution.
-
FIG. 1 is a schematic view showing a structure of a substrate treatment apparatus according to a first embodiment. -
FIG. 2 is a schematic view showing an inside of an inner housing. -
FIG. 3 is a schematic perspective view showing a structure of a pipe. -
FIG. 4 is a sectional view of a substrate which is an object of etching. -
FIG. 5 is a distribution graph of a flow velocity of phosphoric acid solution in the inner housing. -
FIG. 6 is a graph showing a relationship between Reynolds number and a diameter of air bubbles. -
FIG. 7 is a graph showing a vapor pressure curve with 85% by weight of the phosphoric acid solution. -
FIG. 8 is a graph showing a relationship between phosphoric acid concentration and vapor pressure. -
FIG. 9 is a graph showing an example of a relationship between a ratio of an inside diameter A1 and a diameter of an opening, and a boiling point elevation of aphosphoric acid solution 30. -
FIG. 10 is a schematic view showing a structure of a main part of a substrate treatment apparatus according to a second embodiment. -
FIG. 11 shows a modification example of the substrate treatment apparatus according to the second embodiment. -
FIG. 12 shows another modification example of the substrate treatment apparatus according to the second embodiment. - Embodiments will now be described with reference to the accompanying drawings. The present invention is not limited to the embodiments.
-
FIG. 1 is a schematic view showing a structure of a substrate treatment apparatus according to a first embodiment. For example, asubstrate treatment apparatus 1 according to the present embodiment is a wet etching apparatus which removes a silicon nitride film (not shown inFIG. 1 ) in asubstrate 20 with a solution 30 (henceforth phosphoric acid solution) containing phosphoric acid. As shown inFIG. 1 , thesubstrate treatment apparatus 1 includes a housing 11, acirculation path 12, aheater 13, asupply unit 14, apump 15, afilter 16 and alifter 17. - The housing 11 has an
inner housing 111 and anouter housing 112. Theinner housing 111 is formed in the box type which has anupper opening 111 a. Theinner housing 111 stores thephosphoric acid solution 30, i.e., the etching solution of the silicon nitride film in its inside. A temperature, phosphoric acid concentration, and silica concentration of thephosphoric acid solution 30 stored inside theinner housing 111, are optimized to etching of the silicon nitride film in thesubstrate 20. - The
inner housing 111 can store thesubstrate 20 of a wafer form (circular form). If thesubstrate 20 is immersed in thephosphoric acid solution 30, the silicon nitride film in thesubstrate 20 will dissolve in thephosphoric acid solution 30, and will be removed. - The
outer housing 112 has anupper opening 112 a which surrounds all-round theupper opening 111 a of theinner housing 111. Theouter housing 112 collects thephosphoric acid solution 30 overflowing from theupper opening 111 a of theinner housing 111. - The
circulation path 12 communicates with the bottom of theouter housing 112 and the bottom of theinner housing 111, and circulates thephosphoric acid solution 30 to the housing 11. Specifically, thecirculation path 12 flows back thephosphoric acid solution 30 which flows out to theouter housing 112 to theinner housing 111. In process of this flowing back, thephosphoric acid solution 30 goes through theheater 13, thepump 15 and thefilter 16. - The
heater 13 is formed in the middle of thecirculation path 12. Theheater 13 heats thephosphoric acid solution 30 over a normal boiling point of thephosphoric acid solution 30. The normal boiling point is the boiling point in the case that the external pressure is 1 atmosphere. For example, theheater 13 is a line heater which has a halogen lamp as a heat source. - In the present embodiment, a
heating control part 13 a adjusts the heating temperature of theheater 13 so that thephosphoric acid solution 30 may be heated at a constant temperature. Thephosphoric acid solution 30 heated by theheater 13, i.e., heated solution is supplied to the inside of theinner housing 111 via thefilter 16. - The
supply unit 14 is located above theouter housing 112. Thesupply unit 14 supplies water to theouter housing 112. The concentration of thephosphoric acid solution 30 collected in theouter housing 112 may be changed due to boil and etching in theinner housing 111. Therefore, in order to adjust the concentration of thephosphoric acid solution 30 which flows back to theinner housing 111 to the optimal concentration for alternative etching of the silicon nitride film, awater 40 is supplied from thesupply unit 14. - In addition, the
supply unit 14 may supply phosphoric acid to theouter housing 112 instead of thewater 40 for the above-described concentration adjustment. Or thesupply unit 14 may supply phosphoric acid solution to theouter housing 112, wherein the supply phosphoric acid solution is adjusted beforehand to the optimal concentration for the etching of the silicon nitride film, i.e., the same phosphoric acid concentration as thephosphoric acid solution 30 initially stored in the inner housing 111 (before the heated solution is supplied). In the present embodiment, the temperature of water, the phosphoric acid, or the phosphoric acid solution is preferably lower than that of thephosphoric acid solution 30 stored in theinner housing 111 so that the bumping may not occur in theouter housing 112. - The
pump 15 is located upstream from theheater 13 on thecirculation path 12. Thepump 15 draws thephosphoric acid solution 30 from theouter housing 112, thereby thephosphoric acid solution 30 collected by theouter housing 112 moves to theheater 13. Moreover, thepump 15 pressurizes thephosphoric acid solution 30 heated by theheater 13, thereby thisphosphoric acid solution 30 is supplied to theinner housing 111. - The
filter 16 is located downstream from theheater 13 on thecirculation path 12. Thefilter 16 removes a particle contained in thephosphoric acid solution 30 in thecirculation path 12. For example, this particle also contains the silica which deposited by the etching of thesubstrate 20. The filter may be located upstream from theheater 13 on thecirculation path 12. -
FIG. 2 is a schematic view showing the inside of theinner housing 111. As shown inFIG. 2 , in theinner housing 111, thelifter 17 holds a plurality ofsubstrates 20 located in a row at the interval D1 (a first interval). Moreover, thelifter 17 moves thesesubstrates 20 in a vertical direction to theinner housing 111. This up and down move makes it possible to automatically immerse thesubstrates 20 before the etching into thephosphoric acid solution 30 stored in theinner housing 111 and to automatically take out thesubstrates 20 after the etching from theinner housing 111. - Moreover, as shown in
FIG. 2 , apipe 121 is located at the bottom of theinner housing 111. In addition,FIG. 2 shows only onepipe 121. However, anotherpipe 121 is located at the back side of thepipe 121 indicated inFIG. 2 . There are no restrictions in the number of pipes. -
FIG. 3 is a perspective view schematically showing a structure of thepipe 121. Thepipe 121 is included in a part of an exit side of the above-describedcirculation path 12. A peripheral face of thepipe 121 has a row of a plurality ofopenings 121 a which communicate with the inside of theinner housing 111. Theseopenings 121 a are staggered with thesubstrates 20 along the row of the substrates 20 (horizontal direction), and are located at mostly equal intervals. Therefore, when thephosphoric acid solution 30 heated by theheater 13 is discharged from each of theopenings 121 a, the flow of thephosphoric acid solution 30 which passes through between thesubstrates 20 from the bottom of theinner housing 111 occurs (refer to arrows ofFIG. 2 ). A form of the opening 121 a does not need to be a perfect circle. - Moreover, when the
phosphoric acid solution 30 heated by theheater 13 boils in theinner housing 111, air bubbles 50 are generated. These air bubbles 50 move between thesubstrates 20 along with the flow of thephosphoric acid solution 30. In order to uniformly generate these air bubbles 50, the interval between any two of the neighboringopenings 121 a along the above-described row is preferably equal to an interval D1 of thesubstrates 20. - Hereinafter, the substrate treatment method using the
substrate treatment apparatus 1 according to the present embodiment is described.FIG. 4 is a sectional view of thesubstrate 20 which is an object of the etching. Thissubstrate 20 is a semiconductor substrate for manufacturing a laminated type memory on which an electrode layer has been laminated. - As shown in
FIG. 4 , thesubstrate 20 has asilicon substrate 21 and alamination film 22. In thelamination film 22, asilicon oxide film 221 and a silicon nitride film 222 are alternately laminated. Moreover, thesubstrate 20 has atrench 23 which penetrates thelamination film 22. - If the
substrate 20 is housed in theinner housing 111 by thelifter 17, thephosphoric acid solution 30 stored in theinner housing 111 permeates into thelamination film 22 from thetrench 23. Thereby, the silicon nitride film 222 is removed. At this time, the silica concentration becomes high. An electrode layer is formed in a part where the silicon nitride film 222 has been removed by another processing. - The
phosphoric acid solution 30 overflowing from theinner housing 111 is collected by theouter housing 112. Thephosphoric acid solution 30 collected by theouter housing 112 is drawn with thepump 15, and is sent to theheater 13. - The
heater 13 heats thephosphoric acid solution 30 over the normal boiling point. Thephosphoric acid solution 30 heated by theheater 13 is discharged by thepump 15, from the opening 121 a of thepipe 121 to the inside of theinner housing 111. At this time, thepump 15 is pressurizing thephosphoric acid solution 30 so that thephosphoric acid solution 30 does not boil in thepipe 121. As a result, when thephosphoric acid solution 30 is supplied to the inside of theinner housing 111, the flow of thephosphoric acid solution 30 and the air bubbles 50 are generated (refer toFIG. 2 ). -
FIG. 5 is a distribution graph of a flow velocity of thephosphoric acid solution 30 in theinner housing 111.FIG. 5 shows a distribution of the flow velocity with the air bubbles 50, and a distribution of the flow velocity without the air bubbles 50. - In
FIG. 5 , a horizontal axis shows a horizontal position in theinner housing 111 when theinner housing 111 is seen from the side (refer toFIG. 1 ). In other words,FIG. 5 shows the distribution of the flow velocity of thephosphoric acid solution 30 on the substrate 20 (wafer). - As shown in
FIG. 5 , when there are not the air bubbles 50, the flow velocity of thephosphoric acid solution 30 on thesubstrate 20 is small. In thesubstrate 20, if the number of laminations of the silicon nitride film 222 increases by the memory capacitance increase, the quantity of the silicon nitride film 222 which dissolves into thephosphoric acid solution 30 will increase. In other words, the amount of the silica dissolved into thephosphoric acid solution 30 will increase. Therefore, the silica deposits easily within thetrench 23, and if the flow velocity of thephosphoric acid solution 30 is small, the deposit of the silica will be promoted in thetrench 23. - On the other hand, when there are the air bubbles 50 like the present embodiment, the flow velocity of the
phosphoric acid solution 30 becomes large compared with the case where there are not the air bubbles 50. That is, the flow of thephosphoric acid solution 30 is accelerated by the air bubbles 50. Thereby, removal of the silica from thesubstrate 20 is promoted. That is, discharge of the silica dissolved in thetrench 23 is promoted by the flow velocity of thephosphoric acid solution 30 near the surface of thesubstrate 20. - A diameter d and a speed V of the air bubbles 50 can be calculated by using a following equation of motion (1) and an approximate expression (2) of a following drag C. “g” indicated at the following expression (1) shows gravity acceleration, and “Re” indicated at the following expression (2) shows Reynolds number. This Reynolds number can be calculated by using a following expression (3). “v” indicated at the expression (3) shows the kinetic viscosity of phosphoric acid.
-
- According to the above-described expressions (1) to (3), for example, when the diameter d is 0.5 mm, the speed V is 0.04 m/s, and when the diameter d is 50 mm, the speed V is 1.4 m/s.
-
FIG. 6 shows a graph which shows a relationship between the Reynolds number and the diameter d of the air bubbles 50. According toFIG. 6 , if the diameter d of the air bubbles 50 is more than 0.5 mm, the Reynolds number will be larger than 5. If the Reynolds number is larger than 5, Karman vortex will occur. If the Karman vortex occurs, various flows will newly occur after the air bubbles 50 have passed, thereby thephosphoric acid solution 30 is agitated. Therefore, the removal of the silica from thesubstrate 20 can further be promoted. - In order to improve the removal effect of the silica as described above, the diameter d of the air bubbles 50 is preferably larger than 0.5 mm. In order for such the air bubbles 50 to move between the
substrates 20, the interval D1 (refer toFIG. 2 ) of thesubstrates 20 is preferably larger than at least 0.5 mm. Moreover, in order for the air bubbles 50 to stably move between thesubstrates 20, the diameter d of the air bubbles 50 is preferably smaller than the interval D1. - Moreover, in the
substrate treatment apparatus 1 according to the present embodiment, theheater 13 heats thephosphoric acid solution 30 which circulates through thecirculation path 12 over the normal boiling point. For example, thephosphoric acid solution 30 with 85% by weight boils at about 163 deg C. If water is added to thisphosphoric acid solution 30, the normal boiling point will fall. However, when the pressure over the external pressure is applied to thisphosphoric acid solution 30 in thecirculation path 12, thephosphoric acid solution 30 can be hard to boil in thecirculation path 12. - A pressure P applied to the
phosphoric acid solution 30 in thecirculation path 12 can be calculated by a following expression (4) by using Bernoulli's theorem. In the following expression (4), “p” shows phosphoric acid density and “v” shows the flow velocity of thephosphoric acid solution 30 in thecirculation path 12. -
- For example, when the flow velocity v is 1.0 m/s, the pressure P applied to the
phosphoric acid solution 30 is 0.8 kPa. This pressure is applied by using thepump 15. -
FIG. 7 is a graph showing a vapor pressure curve with 85% by weight of phosphoric acid solution. According to the graph shown inFIG. 7 , when thephosphoric acid solution 30 flows through thecirculation path 12 on condition that the pressure is 0.8 kPa and the flow velocity is 1.0 m/s, it is presumed that the boiling point goes up about 0.3 deg C. -
FIG. 8 is a graph showing a relationship between the phosphoric acid concentration and vapor pressure. When the vapor pressure is 0.8 kPa, according to the graphs shown inFIG. 7 andFIG. 8 , respectively, it is presumed that thephosphoric acid solution 30 does not boil in thecirculation path 12 even if phosphoric acid concentration falls 0.15% by weight. - As described above, when the
pump 15 controls the pressure applied to thephosphoric acid solution 30 on thecirculation path 12 so as to be higher than the pressure applied to thephosphoric acid solution 30 in theinner housing 111, thephosphoric acid solution 30 heated at over the normal boiling point cannot be boiled on thecirculation path 12, but can be boiled at theinner housing 111. Thereby, the air bubbles 50 are not generated in thecirculation path 12, but thephosphoric acid solution 30 can smoothly flow through in thecirculation path 12, and can generate the air bubbles 50 in theinner housing 111. - Moreover, the pressure applied to the
phosphoric acid solution 30 on thecirculation path 12 can be adjusted also by adjusting a ratio A1/A2 between an inside diameter A1 of thepipe 121 and a diameter of the opening 121 a shown inFIG. 3 . -
FIG. 9 is a graph showing an example of a relationship between the ratio of the inside diameter A1 of thepipe 121 to the diameter of the opening 121 a, and boiling point elevation of thephosphoric acid solution 30. If the ratio between the inside diameter A1 and the diameter is nearly 1, it will become difficult to increase inner pressure of thepipe 121. Therefore, according toFIG. 9 , for example, when the ratio A1/A2 is less than 3, change of the boiling point stays within 2.7 deg C rise. On the other hand, when the ratio A1/A2 is ten or more, the inner pressure of thepipe 121 is high, but the pressure loss of thepipe 121 is large, thereby there is a high possibility of failing to supply thephosphoric acid solution 30. Therefore, it is desirable for the ratio A1/A2 to be within the range of 3-10. Thus, by adjusting the ratio A1/A2 of the inside diameter A1 of thepipe 121 to the diameter of the opening 121 a, the pressure added to thephosphoric acid solution 30 is controlled within thepipe 121, and thephosphoric acid solution 30 heated by theheater 13 can be boiled when discharged to theinner housing 111 from the opening 121 a. That is, the air bubbles 50 can be generated in theinner housing 111. - Hereinafter, an experiment example which the investigated deposit of the silica is described. In this experiment example, the phosphoric acid solution was supplied from the opening 121 a of the
pipe 121 to theinner housing 111. Here, this phosphoric acid solution was heated so as to boil at 160 deg C, and theinner housing 111 stored thephosphoric acid solution 30 whose concentration adjustment was carried out at about 160 deg C. As a result, by boil of the supplied phosphoric acid solution, the air bubbles 50 were generated, whose diameters d were within the range of 0.5 mm to 50 mm. After that, thesubstrate 20 was immersed into the boiling phosphoric acid solution during a predetermined period. Furthermore, after treatment by alkaline solution, rinse treatment by pure water and drying treatment were carried out to thesubstrate 20, and after that, the treatedsubstrate 20 was observed by SEM (Scanning Electron Microscope). As a result, the deposit of the silica was not observed on the whole surface of thesubstrate 20. - Next, the phosphoric acid solution was supplied from the opening 121 a of the
pipe 121 to theinner housing 111. Here, the temperature adjustment of this phosphoric acid solution was carried out so as not to boil at 160 deg C, and theinner housing 111 stored thephosphoric acid solution 30 of which concentration adjustment was carried out at 160 deg C. After that, thesubstrate 20 was immersed into the phosphoric acid solution which has not been boiled during the predetermined period. Furthermore, the above-described treatments were carried out to thesubstrate 20, and after that, the treatedsubstrate 20 was observed by SEM. As a result, the deposit of the silica was observed on a part of thesubstrate 20. This result is considered to be due to the flow of the phosphoric acid solution which has not been accelerated by the air bubbles 50 in theinner housing 111. - As described above, according to the present embodiment, the air bubbles 50 are generated in the
inner housing 111 by supplying the phosphoric acid solution heated at over the normal boiling point to theinner housing 111. These air bubbles 50 accelerate the flow velocity of the phosphoric acid solution flowing in theinner housing 111, and thereby the discharge effect of the silica depositing to thesubstrate 20 can improve. As a result, for example, when thesubstrate 20 is used for a laminated type memory, the manufacture yield of the laminated type memory can improve. In addition, the air bubbles 50 may be generated by boil of thephosphoric acid solution 30 and also may be generated by supplying high-pressure air and inactive gas from the lower part of theinner housing 111. - Moreover, by controlling the pressure applied to the
phosphoric acid solution 30 on thecirculation path 12 to become higher than the pressure applied to thephosphoric acid solution 30 in theinner housing 111, thephosphoric acid solution 30 heated by theheater 13 cannot be boiled in thecirculation path 12, but can be boiled in theinner housing 111. Thereby, circulation of thephosphoric acid solution 30 can be made smooth. -
FIG. 10 is a schematic view showing a structure of a main part of a substrate treatment apparatus according to a second embodiment. Hereinafter, constituent parts similar to the above-describedsubstrate treatment apparatus 1 according to the first embodiment are denoted by the same reference numerals and will not be described in detail here. - As shown in
FIG. 10 , in addition to a component of thesubstrate treatment apparatus 1 according to the first embodiment, thesubstrate treatment apparatus 2 according to the present embodiment newly includes aplate member 18. On thelifter 17, theplate member 18 faces asubstrate 20 a (a first substrate 20) and asubstrate 20 n (an Nth substrate), respectively. Thesubstrate 20 a and thesubstrate 20 n are located at both ends of a row of the substrates consisting of the N (where N is a natural number equal to 2 or more)substrates 20. The material of theplate member 18 is, for example, quartz, or Teflon (registered trademark) etc. which has the tolerance for high-temperature (for example, 160 deg C) phosphoric acid. Theplate member 18 may be a dummy substrate (wafer) which is not an object of etching. - Regarding the
substrate 20 a and thesubstrate 20 n, even though one surface respectively faces thesubstrates substrates substrates substrates substrates - Therefore, in the present embodiment, the
plate member 18 functions as a current plate to uniform the flow of the air bubbles 50 on both surfaces of thesubstrates plate member 18 to function as such the current plate, an interval D2 between theplate member 18 and thesubstrate 20 a, and an interval D2 between theplate member 18 andsubstrate 20 n, are preferably almost equal to the interval D1 of thesubstrates 20. Here, the interval D1 almost equal to the interval D2 is defined as the relationship between the interval D1 and the interval D2 where the interval D1 and the interval D2 may be equal or the difference thereof is within a range where thesubstrates - Moreover, in order for the
phosphoric acid solution 30 to flow more uniformly on each of the both surfaces of thesubstrates plate member 18 is preferably larger than that of thesubstrate 20 a, and also that of thesubstrate 20 n. - In addition, in the present embodiment, the
plate member 18 is formed in a rectangle. However, theplate member 18 may be a circular form same as thesubstrate 20, or may be other forms. Moreover, in order for the air bubbles 50 to move smoothly, the surfaces (which face thesubstrates plate members 18 are preferable to be flat. - Moreover, in the present embodiment, the
plate member 18 is attached to thelifter 17. However, as shown inFIG. 11 , theplate member 18 may be located in theinner housing 111. In asubstrate treatment apparatus 2 a shown inFIG. 11 , theplate members 18 are attached tointernal surfaces 111 b of theinner housing 111, wherein thesurfaces 111 b face thesubstrates plate member 18 of thesubstrate treatment apparatus 2 a also functions as the above-described current plate. - Furthermore, as shown in
FIG. 12 , theinternal surfaces 111 b themselves of theinner housing 111 may function as the above-described current plate. In this case, an interval D3 between thesubstrate 20 a and one of theinternal surfaces 111 b facing thissubstrate 20 a, and an interval D3 between thesubstrate 20 n and the other of theinternal surfaces 111 b facing thissubstrate 20 n, are almost equal to the interval D1, respectively. - According to the present embodiment described above, the
phosphoric acid solution 30 heated at over the normal boiling point is supplied to theinner housing 111, same as the first embodiment. The air bubbles 50 generated at this time can improve the discharge effect of the silica depositing to thesubstrate 20. In addition, in the present embodiment, the air bubbles 50 may be generated by boil of thephosphoric acid solution 30 and also may be generated by supplying the high-pressure air and the inactive gas from the lower part of theinner housing 111. Furthermore, in the present embodiment, theplate member 18 or theinternal surface 111 b of theinner housing 111 functions as the current plate which arranges the flow of the air bubbles 50 on both surfaces of thesubstrates 20 located at the both ends of the row of the substrates. Thereby, thesubstrates 20 can be hard to damage. - In addition, some substrate treatment apparatuses described above are used to treat the substrate of a laminated type memory. However, these substrate treatment apparatuses can be also applied to treatment of other substrates, for example, a glass substrate for liquid crystal displays, an optical disc substrate, and a substrate for MEMS (Micro Electro Mechanical Systems).
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (14)
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JPH0296334A (en) * | 1988-10-01 | 1990-04-09 | Nisso Eng Kk | Method of circulation of high temperature etching solution |
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JP2009238802A (en) * | 2008-03-26 | 2009-10-15 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
JP2013168563A (en) * | 2012-02-16 | 2013-08-29 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and process liquid concentration determination method |
JP2013219312A (en) * | 2012-04-12 | 2013-10-24 | Toshiba Corp | Substrate processing method and substrate processing apparatus |
-
2016
- 2016-04-22 JP JP2016086377A patent/JP6645900B2/en active Active
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US20210265181A1 (en) | 2021-08-26 |
JP2017195338A (en) | 2017-10-26 |
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