US20170301536A1 - Method for fabricating semiconductor device - Google Patents
Method for fabricating semiconductor device Download PDFInfo
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- US20170301536A1 US20170301536A1 US15/099,581 US201615099581A US2017301536A1 US 20170301536 A1 US20170301536 A1 US 20170301536A1 US 201615099581 A US201615099581 A US 201615099581A US 2017301536 A1 US2017301536 A1 US 2017301536A1
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000012159 carrier gas Substances 0.000 claims abstract description 56
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000010926 purge Methods 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Definitions
- the invention relates to a method for fabricating semiconductor device, and more particularly to a method for fabricating an epitaxial layer on a semiconductor substrate.
- a method for forming an epitaxial layer on a substrate includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
- a method for fabricating semiconductor device includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form an epitaxial layer on the substrate at a starting temperature; lowering the starting temperature to a second temperature; and discharging the substrate from the chamber.
- FIG. 1 illustrates a perspective view for fabricating a semiconductor device according to a preferred embodiment of the present invention.
- FIG. 2 is a flow chart illustrating a method for fabricating a semiconductor device according to a first embodiment of the present invention.
- FIG. 3 is a graph illustrating a relationship between pressure change and time after the formation of epitaxial layer.
- FIG. 4 is a flow chart illustrating a method for fabricating a semiconductor device according to a second embodiment of the present invention.
- FIG. 1 illustrates a perspective view for fabricating a semiconductor device according to a preferred embodiment of the present invention
- FIG. 2 is a flow chart illustrating a method for fabricating the semiconductor device according to a first embodiment of the present invention
- FIG. 3 is a graph illustrating a relationship between pressure change and time after epitaxial layers are formed.
- a substrate 12 such as a silicon substrate is provided.
- the substrate may include bulk silicon.
- an elementary semiconductor such as a silicon or germanium in a crystalline structure, may also be included in the substrate 12 .
- the substrate 12 may also include a compound semiconductor, such as silicon germanium, silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide, or combinations thereof.
- Other possible substrates 12 also include a semiconductor-on-insulator substrate, such as silicon-on-insulator (SOI), SiGe-On-Insulator (SGOI), Ge-On-Insulator substrates.
- SOI substrates may be fabricated using separation by implantation of oxygen (SIMOX), wafer bonding, and/or other suitable methods.
- the present invention pertains to a planar MOS transistor, it would also be desirable to apply the process of the present invention to non-planar transistors, such as FinFET devices, and in such instance, the substrate 12 shown in FIG. 1 would become a fin-shaped structure formed atop a substrate 12 .
- the fin-shaped structure would preferably be obtained by a sidewall image transfer (SIT) process.
- a layout pattern is first input into a computer system and is modified through suitable calculation.
- the modified layout is then defined in a mask and further transferred to a layer of sacrificial layer on a substrate through a photolithographic and an etching process.
- a deposition process and an etching process are carried out such that spacers are formed on the sidewalls of the patterned sacrificial layers.
- sacrificial layers can be removed completely by performing an etching process.
- the pattern defined by the spacers can be transferred into the substrate underneath, and through additional fin cut processes, desirable pattern structures, such as stripe patterned fin-shaped structures could be obtained.
- the fin-shaped structure could also be obtained by first forming a patterned mask (not shown) on the substrate, 12 , and through an etching process, the pattern of the patterned mask is transferred to the substrate 12 to form the fin-shaped structure.
- the formation of the fin-shaped structure could also be accomplished by first forming a patterned hard mask (not shown) on the substrate 12 , and a semiconductor layer composed of silicon germanium is grown from the substrate 12 through exposed patterned hard mask via selective epitaxial growth process to form the corresponding fin-shaped structure.
- a plurality of gate structures 14 are formed on the substrate.
- the formation of the gate structures 14 could be accomplished by sequentially forming a gate dielectric layer, a gate material layer, and a hard mask on the substrate 12 , conducting a pattern transfer process by using a patterned resist (not shown) as mask to remove part of the hard mask, part of the gate material layer, and part of the gate dielectric layer through single or multiple etching processes, and stripping the patterned resist.
- This forms gate structures 14 on the substrate 12 in which each of the gate structures 14 is composed of a patterned gate dielectric layer 16 , a patterned gate material layer 18 , and a patterned hard mask 20 .
- the quantity of the gate structures 14 is not limited to the ones disclosed in this embodiment, but could all be adjusted according to the demand of the product.
- a spacer is formed adjacent to each of the gate structures 14 , and source/drain regions (not shown) could be selectively formed in the substrate 12 adjacent to the spacers 22 .
- the gate dielectric layer 16 could include SiO 2 , SiN, or high-k dielectric material; the gate material layer 18 could include metal, polysilicon, or silicide; the hard mask 20 could be selected from the group consisting of SiO 2 and SiN; and the spacer 22 is selected from the group consisting of SiO 2 , SiN, SiON, and SiCN.
- the substrate 12 is introduced into a chamber.
- recesses (not shown) could be formed in the substrate 12 adjacent to the gate structures 14 and processes including baking and cleaning are conducted to remove native oxides on the substrate 12 .
- Step 102 a precursor and a carrier gas are injected at a starting pressure to form buffer layer (not shown) and epitaxial layers 24 in the aforementioned recesses in the substrate 12 and adjacent to the gate structures 14 .
- the precursor injected is selected from the group consisting of PH 3 and SiH 4
- the carrier gas is selected from the group consisting of H 2 and inert gas
- the starting pressure is preferably between 500 torr to 700 torr, and most preferably at 600 torr.
- the starting pressure is maintained for a time interval t 1 before lowering to a second pressure, in which t 1 in this embodiment is preferably 30 seconds.
- the starting pressure is then adjusted or pumped down to a second pressure according to a gradient.
- the starting pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, and the second pressure is preferably between 250 torr to 350 torr, and most preferably at 300 torr.
- the second pressure is maintained for a time interval t 2 before lowering to a third pressure, in which t 2 in this embodiment is preferably 30 seconds.
- the second pressure is adjusted or pumped down to a third pressure according to a gradient, in which the second pressure is preferably higher than the third pressure.
- the second pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec
- the third pressure is preferably between 5 torr to 20 torr, and most preferably at 10 torr.
- the third pressure is maintained for a time interval t 3 before raised to an end pressure, in which t 3 in this embodiment is preferably 60 seconds.
- the third pressure is adjusted to an end pressure according to a gradient, in which the third pressure is preferably lower than the end pressure.
- the third pressure is adjusted at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, and the end pressure is preferably between 80 torr to 85 torr, and most preferably at 80 torr.
- follow-up process could be carried by performing ion implants to form source/drain regions in the substrate 12 adjacent to the gate structures 14 one more time, forming a contact etch stop layer (CESL) on the substrate 12 and the gate structures 14 , forming an interlayer dielectric (ILD) layer on the CESL, and optionally performing a replacement metal gate (RMG) process to transform the gate structures 14 into metal gates depending on the demand of the product.
- CTL contact etch stop layer
- ILD interlayer dielectric
- RMG replacement metal gate
- the action of continuing injecting the carrier gas could further be achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber.
- Step 102 it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the epitaxial layers 24 , but also cease the injection of the precursor, continue injecting the carrier gas into the chamber, and pump down the starting pressure at the same time.
- Step 103 it would be desirable to conduct Step 103 and ceasing the injection of the precursor while continuing injecting the carrier gas at the same time.
- the action of continuing injecting the carrier gas could further be achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber.
- FIG. 4 is a flow chart illustrating a method for fabricating semiconductor device according to a second embodiment of the present invention.
- a substrate 12 such as a silicon substrate is first provided, a plurality of gate structures 14 are formed on the substrate 12 , and spacers 22 are formed adjacent to the gate structures 14 .
- the formation of the gate structures 14 and the spacers 22 could be accomplished by process disclosed in the aforementioned embodiment, and the details of which are not explained herein for the sake of brevity.
- Step 202 a precursor and a carrier gas are injected at a starting temperature to form epitaxial layers 24 in the substrate 12 and adjacent to the gate structures 14 .
- the precursor injected is selected from the group consisting of PH 3 and SiH 4
- the carrier gas is selected from the group consisting of H 2 and inert gas
- the starting temperature is preferably between 650° C. to 700° C., and most preferably at 670° C.
- This forms epitaxial layers composed of silicon phosphide (SiP) in the substrate.
- SiP silicon phosphide
- the starting temperature is adjusted or lowered to a second temperature according to a gradient.
- the second temperature is between 300° C. to 380° C., and most preferably at 350° C.
- the second temperature is adjusted to a third temperature or an end temperature according to a gradient, in which the second temperature is preferably higher than the end temperature.
- the end temperature is preferably between 15° C. to 30° C., and most preferably at room temperature.
- follow-up process could be carried by performing ion implants to form source/drain regions in the substrate 12 adjacent to the gate structures 14 one more time, forming a contact etch stop layer (CESL) on the substrate 12 and the gate structures 14 , forming an interlayer dielectric (ILD) layer on the CESL, and optionally performing a replacement metal gate (RMG) process to transform the gate structures 14 into metal gates depending on the demand of the product.
- CTL contact etch stop layer
- ILD interlayer dielectric
- RMG replacement metal gate
- the approach of ceasing the injection of precursor while continuing injecting the carrier gas as disclosed in the aforementioned embodiment could also be conducted along with the adjustment in temperature. For instance, it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the epitaxial layers 24 , but also cease the injection of the precursor, continuing injecting the carrier gas into the chamber, and lowering the starting temperature at the same time. In other words, after the aforementioned Step 202 is completed, it would be desirable to conduct Step 203 and ceasing the injection of the precursor while continuing injecting the carrier gas at the same time.
- the action of continuing injecting the carrier gas could be further achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber.
- a precursor and a carrier gas are injected at a starting pressure and a starting temperature to form epitaxial layers 24 in the substrate 12 and adjacent to the gate structures 14 as disclosed in Steps 102 and 202 .
- the starting pressure is between 500 torr to 700 torr, and most preferably at 600 torr and the starting temperature is preferably between 650° C. to 700° C., and most preferably at 670° C.
- the starting pressure is adjusted or pumped down to a second pressure according to a gradient while the starting temperature is also adjusted to a second temperature.
- the starting pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec
- the second pressure is preferably between 250 torr to 350 torr, and most preferably at 300 torr
- the second temperature is between 300° C. to 380° C., and most preferably at 350° C.
- the second pressure is adjusted or pumped down to a third pressure according to a gradient while the second temperature is adjusted to a third temperature or end temperature, in which the second pressure is preferably higher than the third pressure and the second temperature is higher than the third temperature.
- the second pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec
- the third pressure is preferably between 5 torr to 20 torr, and most preferably at 10 torr
- the third temperature is preferably between 15° C. to 30° C., and most preferably at room temperature.
- the third pressure is adjusted to an end pressure according to a gradient.
- the third pressure is adjusted at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, the end pressure is preferably between 80 torr to 85 torr, and most preferably at 80 torr.
- the approach of ceasing the injection of precursor while continuing injecting the carrier gas as disclosed in the aforementioned embodiment could also be conducted along with the adjustments in both pressure and temperature. For instance, it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the epitaxial layers 24 , but also cease the injection of the precursor, continuing injecting the carrier gas into the chamber, pumping down the starting pressure, and lowering the temperature at the same time. In other words, after the aforementioned Steps 102 and 202 are completed, it would be desirable to conduct both Steps 103 and 203 and ceasing the injection of the precursor while continuing injecting the carrier gas at the same time.
- the action of continuing injecting the carrier gas could further be achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber.
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Abstract
A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
Description
- The invention relates to a method for fabricating semiconductor device, and more particularly to a method for fabricating an epitaxial layer on a semiconductor substrate.
- In order to increase the carrier mobility of semiconductor structure, it has been widely used to apply tensile stress or compressive stress to a gate channel. For instance, if a compressive stress were to be applied, it has been common in the conventional art to use selective epitaxial growth (SEG) technique to form epitaxial structure such as silicon germanium (SiGe) epitaxial layer in a silicon substrate. As the lattice constant of the SiGe epitaxial layer is greater than the lattice constant of the silicon substrate thereby producing stress to the channel region of PMOS transistor, the carrier mobility is increased in the channel region and speed of MOS transistor is improved accordingly. Conversely, silicon carbide (SiC) or silicon phosphide (SiP) epitaxial layer could be formed in silicon substrate to produce tensile stress for gate channel of NMOS transistor.
- Nevertheless, in the case for NMOS, high pressure of dopant gas during heavy phosphorus doping often induces higher viscosity epitaxial byproduct condensing on the substrate with 3-dimensional structure. In order to prevent condensed phase consolidation to form defects and results in yield loss, actions or means has to be derived to resolve the issue effectively.
- According to an embodiment of the present invention, a method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
- According to another aspect of the present invention, a method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form an epitaxial layer on the substrate at a starting temperature; lowering the starting temperature to a second temperature; and discharging the substrate from the chamber.
- These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
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FIG. 1 illustrates a perspective view for fabricating a semiconductor device according to a preferred embodiment of the present invention. -
FIG. 2 is a flow chart illustrating a method for fabricating a semiconductor device according to a first embodiment of the present invention. -
FIG. 3 is a graph illustrating a relationship between pressure change and time after the formation of epitaxial layer. -
FIG. 4 is a flow chart illustrating a method for fabricating a semiconductor device according to a second embodiment of the present invention. - Referring to
FIGS. 1-3 ,FIG. 1 illustrates a perspective view for fabricating a semiconductor device according to a preferred embodiment of the present invention,FIG. 2 is a flow chart illustrating a method for fabricating the semiconductor device according to a first embodiment of the present invention, andFIG. 3 is a graph illustrating a relationship between pressure change and time after epitaxial layers are formed. As shown inFIGS. 1-2 , asubstrate 12, such as a silicon substrate is provided. The substrate may include bulk silicon. Alternatively, an elementary semiconductor, such as a silicon or germanium in a crystalline structure, may also be included in thesubstrate 12. Thesubstrate 12 may also include a compound semiconductor, such as silicon germanium, silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide, or combinations thereof. Otherpossible substrates 12 also include a semiconductor-on-insulator substrate, such as silicon-on-insulator (SOI), SiGe-On-Insulator (SGOI), Ge-On-Insulator substrates. For example, the SOI substrates may be fabricated using separation by implantation of oxygen (SIMOX), wafer bonding, and/or other suitable methods. - Despite the present invention pertains to a planar MOS transistor, it would also be desirable to apply the process of the present invention to non-planar transistors, such as FinFET devices, and in such instance, the
substrate 12 shown inFIG. 1 would become a fin-shaped structure formed atop asubstrate 12. - According to an embodiment of the present invention, the fin-shaped structure would preferably be obtained by a sidewall image transfer (SIT) process. For instance, a layout pattern is first input into a computer system and is modified through suitable calculation. The modified layout is then defined in a mask and further transferred to a layer of sacrificial layer on a substrate through a photolithographic and an etching process. In this way, several sacrificial layers distributed with a same spacing and of a same width are formed on a substrate. Each of the sacrificial layers may be stripe-shaped. Subsequently, a deposition process and an etching process are carried out such that spacers are formed on the sidewalls of the patterned sacrificial layers. In a next step, sacrificial layers can be removed completely by performing an etching process. Through the etching process, the pattern defined by the spacers can be transferred into the substrate underneath, and through additional fin cut processes, desirable pattern structures, such as stripe patterned fin-shaped structures could be obtained.
- Alternatively, the fin-shaped structure could also be obtained by first forming a patterned mask (not shown) on the substrate, 12, and through an etching process, the pattern of the patterned mask is transferred to the
substrate 12 to form the fin-shaped structure. Moreover, the formation of the fin-shaped structure could also be accomplished by first forming a patterned hard mask (not shown) on thesubstrate 12, and a semiconductor layer composed of silicon germanium is grown from thesubstrate 12 through exposed patterned hard mask via selective epitaxial growth process to form the corresponding fin-shaped structure. These approaches for forming fin-shaped structure are all within the scope of the present invention. - Next, a plurality of
gate structures 14 are formed on the substrate. In this embodiment, the formation of thegate structures 14 could be accomplished by sequentially forming a gate dielectric layer, a gate material layer, and a hard mask on thesubstrate 12, conducting a pattern transfer process by using a patterned resist (not shown) as mask to remove part of the hard mask, part of the gate material layer, and part of the gate dielectric layer through single or multiple etching processes, and stripping the patterned resist. Thisforms gate structures 14 on thesubstrate 12, in which each of thegate structures 14 is composed of a patterned gatedielectric layer 16, a patternedgate material layer 18, and a patternedhard mask 20. It should be noted that the quantity of thegate structures 14 is not limited to the ones disclosed in this embodiment, but could all be adjusted according to the demand of the product. Next, a spacer is formed adjacent to each of thegate structures 14, and source/drain regions (not shown) could be selectively formed in thesubstrate 12 adjacent to thespacers 22. - In this embodiment, the gate
dielectric layer 16 could include SiO2, SiN, or high-k dielectric material; thegate material layer 18 could include metal, polysilicon, or silicide; thehard mask 20 could be selected from the group consisting of SiO2 and SiN; and thespacer 22 is selected from the group consisting of SiO2, SiN, SiON, and SiCN. - After the
gate structures 14 are formed, as shown inStep 101 inFIG. 2 , thesubstrate 12 is introduced into a chamber. Next, recesses (not shown) could be formed in thesubstrate 12 adjacent to thegate structures 14 and processes including baking and cleaning are conducted to remove native oxides on thesubstrate 12. - Next, in
Step 102, a precursor and a carrier gas are injected at a starting pressure to form buffer layer (not shown) andepitaxial layers 24 in the aforementioned recesses in thesubstrate 12 and adjacent to thegate structures 14. In this embodiment, the precursor injected is selected from the group consisting of PH3 and SiH4, the carrier gas is selected from the group consisting of H2 and inert gas, and the starting pressure is preferably between 500 torr to 700 torr, and most preferably at 600 torr. This formsepitaxial layers 24 composed of silicon phosphide (SiP) in the substrate. Nevertheless, it would also be desirable to unite precursor and carrier gas of other combinations to form epitaxial layers of other material, such as epitaxial layers composed of silicon germanium (SiGe), which is also within the scope of the present invention. As shown inFIG. 3 , the starting pressure is maintained for a time interval t1 before lowering to a second pressure, in which t1 in this embodiment is preferably 30 seconds. - After the
epitaxial layers 24 are formed, as shown inStep 103, the starting pressure is then adjusted or pumped down to a second pressure according to a gradient. Preferably, the starting pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, and the second pressure is preferably between 250 torr to 350 torr, and most preferably at 300 torr. As shown inFIG. 3 , the second pressure is maintained for a time interval t2 before lowering to a third pressure, in which t2 in this embodiment is preferably 30 seconds. - Next, in
Step 104, the second pressure is adjusted or pumped down to a third pressure according to a gradient, in which the second pressure is preferably higher than the third pressure. Specifically, the second pressure is pumped down at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, and the third pressure is preferably between 5 torr to 20 torr, and most preferably at 10 torr. As shown inFIG. 3 , the third pressure is maintained for a time interval t3 before raised to an end pressure, in which t3 in this embodiment is preferably 60 seconds. - Next, in
Step 105, the third pressure is adjusted to an end pressure according to a gradient, in which the third pressure is preferably lower than the end pressure. In this embodiment, the third pressure is adjusted at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, and the end pressure is preferably between 80 torr to 85 torr, and most preferably at 80 torr. - It has been observed that by pumping down or lowering the pressure after injecting precursor and carrier gas to form epitaxial layer, it would be desirable to help removing higher vapor pressure condensed phase, which might be used to consolidate and form solid phase defects on the substrate.
- After the pressure is adjusted to the aforementioned end pressure, follow-up process could be carried by performing ion implants to form source/drain regions in the
substrate 12 adjacent to thegate structures 14 one more time, forming a contact etch stop layer (CESL) on thesubstrate 12 and thegate structures 14, forming an interlayer dielectric (ILD) layer on the CESL, and optionally performing a replacement metal gate (RMG) process to transform thegate structures 14 into metal gates depending on the demand of the product. - According to an embodiment of the present invention, after injecting the precursor and the carrier gas to form the
epitaxial layers 24 or after the formation ofepitaxial layer 24 are completed, it would be desirable to cease the injection of the precursor while continuing injecting the carrier gas into the chamber. Specifically, the action of continuing injecting the carrier gas could further be achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber. - Moreover, according to yet another alternative of the above embodiment, it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the
epitaxial layers 24, but also cease the injection of the precursor, continue injecting the carrier gas into the chamber, and pump down the starting pressure at the same time. In other words, after theaforementioned Step 102 is completed, it would be desirable to conductStep 103 and ceasing the injection of the precursor while continuing injecting the carrier gas at the same time. Similarly, the action of continuing injecting the carrier gas could further be achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber. - Referring to
FIG. 1 andFIG. 4 , in whichFIG. 4 is a flow chart illustrating a method for fabricating semiconductor device according to a second embodiment of the present invention. As shown inFIG. 1 , asubstrate 12, such as a silicon substrate is first provided, a plurality ofgate structures 14 are formed on thesubstrate 12, andspacers 22 are formed adjacent to thegate structures 14. The formation of thegate structures 14 and thespacers 22 could be accomplished by process disclosed in the aforementioned embodiment, and the details of which are not explained herein for the sake of brevity. - After the
gate structures 14 are formed, as shown inStep 201 inFIG. 4 , thesubstrate 12 is introduced into a chamber. Next, inStep 202, a precursor and a carrier gas are injected at a starting temperature to formepitaxial layers 24 in thesubstrate 12 and adjacent to thegate structures 14. In this embodiment, the precursor injected is selected from the group consisting of PH3 and SiH4 the carrier gas is selected from the group consisting of H2 and inert gas, and the starting temperature is preferably between 650° C. to 700° C., and most preferably at 670° C. This forms epitaxial layers composed of silicon phosphide (SiP) in the substrate. Nevertheless, it would also be desirable to unite precursor and carrier gas of other combinations to form epitaxial layers of other material, such as epitaxial layers composed of silicon germanium (SiGe), which is also within the scope of the present invention. - Next, in
Step 203, the starting temperature is adjusted or lowered to a second temperature according to a gradient. Preferably, the second temperature is between 300° C. to 380° C., and most preferably at 350° C. - Next, in
Step 204, the second temperature is adjusted to a third temperature or an end temperature according to a gradient, in which the second temperature is preferably higher than the end temperature. In this embodiment the end temperature is preferably between 15° C. to 30° C., and most preferably at room temperature. - It has been observed that by introducing a cool down process or lowering the temperature after injecting precursor and carrier gas for forming epitaxial layer, it would be desirable to efficiently remove residue gases due to lower viscosity.
- After the temperature is adjusted to the aforementioned end temperature, follow-up process could be carried by performing ion implants to form source/drain regions in the
substrate 12 adjacent to thegate structures 14 one more time, forming a contact etch stop layer (CESL) on thesubstrate 12 and thegate structures 14, forming an interlayer dielectric (ILD) layer on the CESL, and optionally performing a replacement metal gate (RMG) process to transform thegate structures 14 into metal gates depending on the demand of the product. - According to an embodiment of the present invention, the approach of ceasing the injection of precursor while continuing injecting the carrier gas as disclosed in the aforementioned embodiment could also be conducted along with the adjustment in temperature. For instance, it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the
epitaxial layers 24, but also cease the injection of the precursor, continuing injecting the carrier gas into the chamber, and lowering the starting temperature at the same time. In other words, after theaforementioned Step 202 is completed, it would be desirable to conductStep 203 and ceasing the injection of the precursor while continuing injecting the carrier gas at the same time. Similarly, the action of continuing injecting the carrier gas could be further achieved by purging the carrier gas and continuing injecting the carrier gas at the same time, and in such instance, the rate of purging the carrier gas is preferably higher than a rate of continuing injecting the carrier gas into the chamber. - Moreover, it should be noted that despite the aforementioned temperature alteration or adjustment is preferably conducted without the adjustment of other parameters, the alteration or lowering of the temperature disclosed in the aforementioned second embodiment could be employed in conjunction with the pressure change conducted in the aforementioned first embodiment.
- For instance, after the
substrate 12 is introduced into a chamber as inSteps epitaxial layers 24 in thesubstrate 12 and adjacent to thegate structures 14 as disclosed inSteps - Next, in
Steps - Next, in
Steps - Next, in
Step 105, the third pressure is adjusted to an end pressure according to a gradient. In this embodiment, the third pressure is adjusted at a rate between 7 torr/sec to 17 torr/sec, and most preferably at 12 torr/sec, the end pressure is preferably between 80 torr to 85 torr, and most preferably at 80 torr. - According to an embodiment of the present invention, the approach of ceasing the injection of precursor while continuing injecting the carrier gas as disclosed in the aforementioned embodiment could also be conducted along with the adjustments in both pressure and temperature. For instance, it would be desirable to not only cease the injection of the precursor while continuing injecting the carrier gas into the chamber during the formation of the
epitaxial layers 24, but also cease the injection of the precursor, continuing injecting the carrier gas into the chamber, pumping down the starting pressure, and lowering the temperature at the same time. In other words, after theaforementioned Steps Steps - Overall, the present invention provides following advantages:
- 1. By purging carrier gas before pumping down pressure or lowering temperature during epitaxial formation, it would be desirable to dilute and decrease amount of un-reacted gas and epitaxial layer byproducts insides the chamber and reduce the viscosity of residue gas for efficient removal.
- 2. By pumping down pressure with or without during a cool down process in the chamber, it would be desirable to help removing higher vapor pressure condensed phase, which might consolidate and form solid phase or defects on the substrate.
- 3. By introducing a cool down process or lowing temperature during the pressure pump-down process, it would be desirable to efficiently remove residue gases due to lower viscosity.
- Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (18)
1. A method for forming an epitaxial layer on a substrate, comprising:
providing the substrate into a chamber;
injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and
pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
2. The method of claim 1 , wherein the precursor comprises PH3 and SiH4.
3. The method of claim 1 , wherein the carrier gas is selected from the group consisting of H2 and inert gas.
4. The method of claim 1 , further comprising pumping down the starting pressure between 7 torr/sec to 17 torr/sec.
5. The method of claim 1 , further comprising adjusting the second pressure to a third pressure after pumping down the starting pressure to the second pressure.
6. The method of claim 5 , wherein the second pressure is higher than the third pressure.
7. The method of claim 5 , further comprising adjusting the third pressure to an end pressure after adjusting the second pressure to the third pressure.
8. The method of claim 7 , wherein the third pressure is lower than the end pressure.
9. The method of claim 1 , further comprising:
ceasing the injection of the precursor while continuing injecting the carrier gas into the chamber.
10. The method of claim 9 , further comprising purging the carrier gas and continuing injecting the carrier gas at the same time.
11. The method of claim 10 , wherein a rate of purging the carrier gas is higher than a rate of continuing injecting the carrier gas.
12. The method of claim 9 , further comprising:
ceasing the injection of the precursor, continuing injecting the carrier gas into the chamber, and pumping down the starting pressure at the same time.
13. The method of claim 1 , wherein the epitaxial layer is formed on the substrate at a starting temperature, the method comprising:
lowering the starting temperature while pumping down the starting pressure.
14. A method for fabricating semiconductor device, comprising:
providing a substrate into a chamber;
injecting a precursor and a carrier gas to form an epitaxial layer on the substrate at a starting temperature;
lowering the starting temperature to a second temperature; and
discharging the substrate from the chamber.
15. The method of claim 14 , wherein the precursor comprises PH3 and SiH4.
16. The method of claim 14 , wherein the carrier gas is selected from the group consisting of H2 and inert gas.
17. The method of claim 14 , further comprising adjusting the second temperature to a third temperature after lowering the starting temperature to the second temperature.
18. The method of claim 17 , wherein the second temperature is higher than the starting temperature.
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US11239336B2 (en) * | 2020-02-12 | 2022-02-01 | Globalfoundries U.S. Inc. | Integrated circuit structure with niobium-based silicide layer and methods to form same |
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US20120043556A1 (en) * | 2010-08-20 | 2012-02-23 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
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US4728389A (en) | 1985-05-20 | 1988-03-01 | Applied Materials, Inc. | Particulate-free epitaxial process |
US5902088A (en) | 1996-11-18 | 1999-05-11 | Applied Materials, Inc. | Single loadlock chamber with wafer cooling function |
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US20120043556A1 (en) * | 2010-08-20 | 2012-02-23 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
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