US20170110641A1 - Semiconductor package and manufacturing method thereof - Google Patents

Semiconductor package and manufacturing method thereof Download PDF

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Publication number
US20170110641A1
US20170110641A1 US15/394,464 US201615394464A US2017110641A1 US 20170110641 A1 US20170110641 A1 US 20170110641A1 US 201615394464 A US201615394464 A US 201615394464A US 2017110641 A1 US2017110641 A1 US 2017110641A1
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cover
semiconductor package
light sensor
wafer
layer
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US15/394,464
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Chien-Hung Liu
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XinTec Inc
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XinTec Inc
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Priority to US15/394,464 priority Critical patent/US20170110641A1/en
Assigned to XINTEC INC. reassignment XINTEC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIU, CHIEN-HUNG
Publication of US20170110641A1 publication Critical patent/US20170110641A1/en
Abandoned legal-status Critical Current

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    • H01L35/08—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L35/10—
    • H01L35/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Connection of interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices

Definitions

  • the present invention relates to a semiconductor package and a manufacturing method of the semiconductor package. More particularly, the present invention relates to a semiconductor package having a detecting function and a manufacturing method of the semiconductor package.
  • MEMS micro-electro mechanical systems
  • FIG. 1 A detecting type semiconductor package 1 is shown in FIG. 1 .
  • the semiconductor package 1 has a chip 10 and a glass sheet 12 that is stacked on the chip 10 .
  • the chip 10 has an operating surface 10 a and a non-operating surface 10 b.
  • the operating surface 10 a has a light sensor 100 , and the glass sheet 12 is disposed on the operating surface 10 a by a dam layer 11 , such that a space P is formed between the glass sheet 12 and the light sensor 100 .
  • the volume of the chip 10 is large, so that noise is more apt to occur.
  • the use of the semiconductor package 1 is limited, and the semiconductor package 1 is difficult to be matched with the requirement of multiple functions, thereby reducing product competitiveness.
  • An aspect of the present invention is to provide a semiconductor package.
  • a semiconductor package includes a substrate, at least one support, a cover, and a plate.
  • the substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface.
  • the light sensor or the thermal sensor is disposed on the first surface.
  • the second surface of the substrate has an opening to expose the light sensor or the thermal sensor.
  • the support is disposed on the first surface of the substrate.
  • the cover is disposed on the support, such that the cover is above the light sensor or the thermal sensor, and a first space is formed between the cover and the light sensor or between the cover and the thermal sensor.
  • the plate is placed on the second surface of the substrate to cover the opening, such that a second space is formed between the plate and the light sensor or between the plate and the thermal sensor.
  • An aspect of the present invention is to provide a manufacturing method of a semiconductor package.
  • a manufacturing method of a semiconductor package includes the following steps.
  • a wafer that has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface is provided, and the light sensor or the thermal sensor is disposed on the first surface.
  • a cover is disposed on the first surface of the wafer by at least one support, such that the cover is above the light sensor or the thermal sensor, and a first space is formed between the cover and the light sensor or between the cover and the thermal sensor.
  • An opening is formed in the second surface of the wafer to expose the light sensor or the thermal sensor.
  • a plate is placed on the second surface of the substrate to cover the opening, such that a second space is formed between the plate and the light sensor or between the plate and the thermal sensor.
  • the second space may be formed between the plate and the light sensor or between the plate and the thermal sensor.
  • the volume of the substrate of the semiconductor package may be reduced, so that signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package of the present invention is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • An aspect of the present invention is to provide a semiconductor package.
  • a semiconductor package includes a substrate, at least one support, a cover, an isolation layer, and a redistribution layer.
  • the substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface.
  • the first surface has a recess and an electrical connecting pad.
  • the light sensor or the thermal sensor is disposed on the first surface and covers the recess.
  • the support is disposed on the first surface of the substrate.
  • the cover is located on the support, such that a space is formed between the cover and the light sensor or between the cover and the thermal sensor.
  • the isolation layer is located on the second surface of the substrate.
  • the redistribution layer is located on the isolation layer and electrically connected to the electrical connecting pad.
  • An aspect of the present invention is to provide a manufacturing method of a semiconductor package.
  • a manufacturing method of a semiconductor package includes the following steps.
  • a wafer that has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface is provided, and the light sensor or the thermal sensor is disposed on the first surface and covers a recess of the first surface.
  • a cover is disposed on the first surface of the wafer by at least one support, such that the cover is above the light sensor or the thermal sensor, and a space is formed between the cover and the light sensor or between the cover and the thermal sensor.
  • a through hole is formed in the second surface of the wafer to expose the support and an electrical connecting pad of the wafer.
  • An isolation layer is formed on the second surface of the wafer and a wall surface that surrounds the through hole.
  • a redistribution layer is formed on the isolation layer, and the redistribution layer is electrically connected to the electrical connecting pad.
  • the volume of the substrate of the semiconductor package may be reduced.
  • signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package of the present invention is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • FIG. 1 is a cross-sectional view of a conventional semiconductor package
  • FIGS. 2A to 2J are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention.
  • FIGS. 3A to 3E are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention.
  • FIGS. 4A to 4D are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention.
  • a semiconductor package after being stacked, packaged, and diced may be used in various micro electro mechanical systems (MEMS), such as an image sensor capable of detecting through an electrical variation or a capacitive variation, and a detecting-type semiconductor package manufactured in wafer scale package process (WSP) and having image sensors, RF circuits, accelerators, gyroscopes, micro actuators, or pressure sensors.
  • MEMS micro electro mechanical systems
  • WSP wafer scale package process
  • FIGS. 2A to 2J are cross-sectional views of a manufacturing method of a semiconductor package 2 (see FIG. 2J ) according to one embodiment of the present invention.
  • a wafer 20 having at least one light sensor or thermal sensor 200 , a first surface 20 a, and a second surface 20 b opposite to the first surface 20 a is provided.
  • the light sensor or the thermal sensor 200 is disposed on the first surface 20 a.
  • the light sensor or the thermal sensor 200 may be located on first surface 20 a or in the first surface 20 a, the light sensor or the thermal sensor 200 may protrude from the first surface 20 a , the light sensor or the thermal sensor 200 and the first surface 20 a may be at the same level, the light sensor or the thermal sensor 200 may be recessed in the light sensor or the thermal sensor 200 , and the present invention is not limited in this regard.
  • the first surface 20 a of the wafer 20 has a plurality of electrical connecting pads 201 .
  • the size of the wafer 20 may be 6 inches, 8 inches, 12 inches, etc., and the present invention is not limited in this regard.
  • the light sensor or the thermal sensor 200 may be used to detect an infrared ray (IR), but the present invention is not limited thereto.
  • At least one support 21 is formed on the first surface 20 a of the wafer 20 .
  • the support 21 is a dam layer and located on a portion of a surface of the electrical connecting pad 201 .
  • a cover 22 is disposed on the support 21 , such that the cover 22 is above the light sensor or the thermal sensor 200 , and a first space P 1 is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200 .
  • the cover 22 is made of silicon or quartz, and the thickness t of the cover 22 may be 300 ⁇ m, but the thinner, the better.
  • An infrared ray may pass through the cover 22 , such that the light sensor or the thermal sensor 200 may detect the infrared ray, but the present invention is not limited to the infrared ray.
  • the first space P 1 is in a vacuum state, and the height h of the first space P 1 may be in a range form 30 ⁇ m to 50 ⁇ m, such as 40 ⁇ m.
  • the cover 22 is made of light impermeable material (e.g., silicon or quartz). Therefore, an optical alignment process may not be used.
  • the support 21 is disposed on the first surface 20 a of the wafer 20 , and thereafter the cover 22 is used to cover the wafer 20 , such that the alignment problem of the cover 22 (or the support 21 ) is prevented.
  • the support 21 when the cover 22 is made of light permeable material (e.g., glass), the support 21 may be disposed on cover 22 , and next the support 21 and the cover 22 may be disposed on the first surface 20 a of the wafer 20 by an alignment method, such as optical alignment by utilizing the light transmittance of glass.
  • an alignment method such as optical alignment by utilizing the light transmittance of glass.
  • the thickness of the wafer 20 is reduced from the second surface 20 b, and a through hole 202 is formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201 .
  • the thickness d of the wafer 20 may be in a range from 100 ⁇ m to 400 ⁇ m.
  • an isolation layer 23 is formed on the second surface 20 b of the wafer 20 , and through hole 202 is filled with the isolation layer 23 . Thereafter, an opening region 230 that is aligned with the light sensor or the thermal sensor 200 on the isolation layer 23 is formed, such that a portion of the second surface 20 b of the wafer 20 is exposed through the opening region 230 .
  • an opening 203 is formed in the second surface 20 b of the wafer 20 in the opening region 230 to expose the light sensor or the thermal sensor 200 .
  • the opening 203 is formed by and etching process.
  • a plate 24 is placed on the second surface 20 b of the wafer 20 to cover the opening 203 , such that a second space P 2 is formed between the plate 24 and the light sensor 200 or between the plate 24 and the thermal sensor 200 .
  • the plate 24 may support the wafer 20 to enhance structure strength.
  • the plate 24 may be made of silicon or glass, and the plate 24 is disposed on the isolation layer 23 and the through hole 202 . Moreover, the thickness r of the plate 24 may be in a range from 100 ⁇ m to 300 ⁇ m, such as 200 ⁇ m.
  • the second space P 2 is in a vacuum state.
  • an via hole 240 communicated with the through hole 202 is formed in the plate 24 , and the isolation layer 23 and the support 21 are removed from the through hole 202 , such that the support 21 and a side surface of the electrical connecting pad 201 .
  • a redistribution layer 25 is formed on the plate 24 , the sidewall of the via hole 240 , and the sidewall of the through hole 202 , such that the redistribution layer 25 is electrically connected to the electrical connecting pad 201 .
  • the redistribution layer 25 includes a dielectric layer 250 and a conductive layer 251 that is formed on the dielectric layer 250 .
  • the dielectric layer 250 is formed on the plate 24 , the sidewall of the via hole 240 , and the sidewall of the through hole 202 .
  • a protection layer 26 is formed on the plate 24 and the redistribution layer 25 , and an opening hole 260 is formed in the protection layer 26 , such that a portion of a surface of the redistribution layer 251 on the plate 24 is exposed through the opening hole 260 .
  • the protection layer 26 may be made of solder mask material.
  • a conductive protrusion 27 may be a solder ball, a protruding block, or a structure that is known in the industry, and the shape of the conductive protrusion 27 may be round, elliptical, square, and rectangular, but the present invention is not limited in this regard.
  • a dicing process is performed, and a cutting path S of the dicing process is along the through hole 202 and the via hole 240 , such that a plurality of semiconductor packages shown in FIG. 2J are formed.
  • the conductive protrusion 27 may be formed on the redistribution layer 251 in the opening hole 260 .
  • a chip such as a substrate 20 shown in FIG. 2J , may be referred to as the wafer 20 after being diced.
  • the second space P 2 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result.
  • the second space may be formed between the plate and the light sensor or between the plate and the thermal sensor.
  • the volume of the substrate of the semiconductor package may be reduced, so that signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved.
  • FIGS. 3A to 3E are cross-sectional views of a manufacturing method of a semiconductor package 3 (see FIG. 3E ) according to one embodiment of the present invention.
  • the wafer 20 that has at least one light sensor or thermal sensor 200 , the first surface 20 a, and the second surface 20 b opposite to the first surface 20 a is provided.
  • the light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers a recess 204 of the first surface 20 a.
  • the cover 22 may be disposed on the first surface 20 a of the wafer 20 by at least one support 21 , such that the cover 22 is above the light sensor or the thermal sensor 200 , and a space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200 . Thereafter, the second surface 20 b of the wafer 20 may be ground.
  • the through hole 202 may be formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201 of the wafer 20 .
  • an isolation layer 23 a may be formed on the second surface 20 b of the wafer 20 and a wall surface 20 c that surrounds the through hole 202 .
  • the isolation layer 23 a may cover the through hole 202 , and a knife is used to form a notch 202 a in the isolation layer 23 a in the through hole 202 , such that the isolation layer 23 a is located on the wall surface of the wafer 20 surrounding the through hole 202 . Thereafter, a redistribution layer 25 a is formed on the isolation layer 23 a and electrically connected to the electrical connecting pad 201 , such that the structure shown in FIG. 3C may be obtained.
  • the protection layer 26 may be formed on the isolation layer 23 a and the redistribution layer 25 a. Afterwards, the protection layer 26 is patterned to form the opening hole 260 to expose the redistribution layer 25 a. After the opening hole 260 of the protection layer 26 is formed, the conductive protrusion 27 may be formed on the redistribution layer 25 a in the opening hole 260 , such that the conductive protrusion 27 may be conducted with the electrical connecting pad 201 through the redistribution layer 25 a.
  • the cover 22 , the support 21 , and the wafer 20 may be vertically diced along the through hole 202 (i.e., along the cutting path S), such that the semiconductor package 3 is obtained.
  • the substrate 20 shown in FIG. 3E is the diced wafer 20 .
  • the semiconductor package 3 includes the substrate 20 , at least one support 21 , the cover 22 , the isolation layer 23 a, the redistribution layer 25 a, the protection layer 26 , and the conductive protrusion 27 .
  • the substrate 20 has at least one light sensor or thermal sensor 200 , the first surface 20 a and the second surface 20 b that is opposite to the first surface 20 a.
  • the first surface 20 a has the recess 204 and the electrical connecting pad 201 .
  • the recess 204 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result.
  • the light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204 .
  • the support 21 is disposed on the first surface 20 a of the substrate 20 .
  • the cover 22 is located on the support 21 , such that the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200 .
  • the isolation layer 23 a is located on the second surface 20 b of the substrate 20 .
  • the redistribution layer 25 a is located on the isolation layer 23 a and electrically connected to the electrical connecting pad 201 .
  • the protection layer 26 is located on the isolation layer 23 a and the redistribution layer 25 a, and the protection layer 26 has the opening hole 260 to expose a portion of a surface of the redistribution layer 25 a.
  • the conductive protrusion 27 is located on the redistribution layer 25 a that is in the opening hole 260 .
  • the substrate 20 has the wall surface 20 c adjacent to the electrical connecting pad 201 and the second surface 20 b, and the isolation layer 23 a is located on the wall surface 20 c. Furthermore, an obtuse angle is included between the wall surface 20 c and the second surface 20 b.
  • the volume of the substrate of the semiconductor package may be reduced.
  • signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • FIGS. 4A to 4D are cross-sectional views of a manufacturing method of a semiconductor package 4 (see FIG. 4D ) according to one embodiment of the present invention.
  • the wafer 20 that has at least one light sensor or thermal sensor 200 , the first surface 20 a, and the second surface 20 b opposite to the first surface 20 a is provided.
  • the light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204 of the first surface 20 a.
  • the cover 22 may be disposed on the first surface 20 a of the wafer 20 by at least one support 21 , such that the cover 22 is above the light sensor or the thermal sensor 200 , and the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200 . Thereafter, the second surface 20 b of the wafer 20 may be ground.
  • the through hole 202 may be formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201 of the wafer 20 .
  • an isolation layer 23 b may be formed on the second surface 20 b of the wafer 20 and a wall surface 20 d that surrounds the through hole 202 .
  • the wall surface 20 d is perpendicular to the second surface 20 b and the electrical connecting pad 201 .
  • the isolation layer 23 b may be patterned to expose the electrical connecting pad 201 .
  • the redistribution layer 25 a may be formed on the isolation layer 23 b, such that the redistribution layer 25 a is electrically connected to the electrical connecting pad 201 .
  • the protection layer 26 may be formed on the isolation layer 23 b and the redistribution layer 25 a. Afterwards, the protection layer 26 is patterned to form the opening hole 260 to expose the redistribution layer 25 a.
  • the conductive protrusion 27 may be formed on the redistribution layer 25 a in the opening hole 260 , such that the conductive protrusion 27 may be conducted with the electrical connecting pad 201 through the redistribution layer 25 a, and the structure shown in FIG. 4C is obtained.
  • a portion of the protection layer 26 is located in the through hole 202 , such that a void is formed between the protection layer 26 and the electrical connecting pad 201 .
  • the cover 22 , the support 21 , and the wafer 20 may be vertically diced along the cutting path S, such that the semiconductor package 4 is obtained.
  • the substrate 20 shown in FIG. 4D is the diced wafer 20 .
  • the semiconductor package 4 includes the substrate 20 , at least one support 21 , the cover 22 , the isolation layer 23 b, the redistribution layer 25 a, the protection layer 26 , and the conductive protrusion 27 .
  • the substrate 20 has at least one light sensor or thermal sensor 200 , the first surface 20 a and the second surface 20 b that is opposite to the first surface 20 a.
  • the first surface 20 a has the recess 204 and the electrical connecting pad 201 .
  • the recess 204 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result.
  • the light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204 .
  • the support 21 is disposed on the first surface 20 a of the substrate 20 .
  • the cover 22 is located on the support 21 , such that the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200 .
  • the isolation layer 23 b is located on the second surface 20 b of the substrate 20 .
  • the redistribution layer 25 a is located on the isolation layer 23 b and electrically connected to the electrical connecting pad 201 .
  • the protection layer 26 is located on the isolation layer 23 b and the redistribution layer 25 a, and the protection layer 26 has the opening hole 260 to expose a portion of a surface of the redistribution layer 25 a.
  • the conductive protrusion 27 is located on the redistribution layer 25 a that is in the opening hole 260 .
  • the substrate 20 has the wall surface 20 d adjacent to the electrical connecting pad 201 and the second surface 20 b, and the isolation layer 23 b is located on the wall surface 20 d. Furthermore, the wall surface 20 d is perpendicular to the second surface 20 b and the electrical connecting pad 201 , and the protection layer 26 is located in the through hole 202 .
  • the volume of the substrate of the semiconductor package may be reduced.
  • signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.

Abstract

A semiconductor package includes a substrate, at lest one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface has an opening to expose the light sensor (or the thermal sensor). The support is disposed on the first surface. The cover is disposed on the support, such that the cover is above the light sensor (or the thermal sensor) to form a first space between the cover and the light sensor (or the thermal sensor). The plate is placed on the second surface to cover the opening, such that a second space is formed between the plate and the light sensor (or the thermal sensor).

Description

    RELATED APPLICATIONS
  • The present application is a Divisional Application of the U.S. application Ser. No. 14/570,949, filed Dec. 15, 2014, which claims priority to Taiwan Application Serial Number 103136492, filed Oct. 22, 2014, all of which are herein incorporated by reference.
    • BACKGROUND
  • Field of Invention
  • The present invention relates to a semiconductor package and a manufacturing method of the semiconductor package. More particularly, the present invention relates to a semiconductor package having a detecting function and a manufacturing method of the semiconductor package.
  • Description of Related Art
  • Along with the progress and development in electronic industry, the requirement for functions of electronic products is increased. In order to achieve the requirement of multiple functions for users, semiconductor packages and electronic components having multiple functions need to be disposed on the printed circuit boards of the electronic products. According to the requirements of miniaturization, semiconductor packages are integrated with the electronic products to form micro-electro mechanical systems (MEMS) utilizing the improvement of integration. As a result, not only the layout space of the printed circuit board may be reduced, but also the requirement of multiple functions may be maintained.
  • Recently, technology for stacking wafers is a new development in the art, such that plural homogeneous or heterogeneous wafers may be stacked in the development to reach the purpose of multiple functions. Therefore, the bottleneck of miniaturization in the technology of semiconductor flat package may be solved. That is to say, the requirement of miniaturization may be achieved by integration.
  • A detecting type semiconductor package 1 is shown in FIG. 1. The semiconductor package 1 has a chip 10 and a glass sheet 12 that is stacked on the chip 10. The chip 10 has an operating surface 10 a and a non-operating surface 10 b. The operating surface 10 a has a light sensor 100, and the glass sheet 12 is disposed on the operating surface 10 a by a dam layer 11, such that a space P is formed between the glass sheet 12 and the light sensor 100.
  • However, in the conventional semiconductor package 1 having a detecting function, the volume of the chip 10 is large, so that noise is more apt to occur. As a result, the use of the semiconductor package 1 is limited, and the semiconductor package 1 is difficult to be matched with the requirement of multiple functions, thereby reducing product competitiveness.
    • SUMMARY
  • An aspect of the present invention is to provide a semiconductor package.
  • According to an embodiment of the present invention, a semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface of the substrate has an opening to expose the light sensor or the thermal sensor. The support is disposed on the first surface of the substrate. The cover is disposed on the support, such that the cover is above the light sensor or the thermal sensor, and a first space is formed between the cover and the light sensor or between the cover and the thermal sensor. The plate is placed on the second surface of the substrate to cover the opening, such that a second space is formed between the plate and the light sensor or between the plate and the thermal sensor.
  • An aspect of the present invention is to provide a manufacturing method of a semiconductor package.
  • According to an embodiment of the present invention, a manufacturing method of a semiconductor package includes the following steps. A wafer that has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface is provided, and the light sensor or the thermal sensor is disposed on the first surface. A cover is disposed on the first surface of the wafer by at least one support, such that the cover is above the light sensor or the thermal sensor, and a first space is formed between the cover and the light sensor or between the cover and the thermal sensor. An opening is formed in the second surface of the wafer to expose the light sensor or the thermal sensor. A plate is placed on the second surface of the substrate to cover the opening, such that a second space is formed between the plate and the light sensor or between the plate and the thermal sensor.
  • In the aforementioned embodiments of the present invention, since the second surface of the substrate of the semiconductor package of the present invention has the opening, the second space may be formed between the plate and the light sensor or between the plate and the thermal sensor. As a result, the volume of the substrate of the semiconductor package may be reduced, so that signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package of the present invention is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • An aspect of the present invention is to provide a semiconductor package.
  • According to an embodiment of the present invention, a semiconductor package includes a substrate, at least one support, a cover, an isolation layer, and a redistribution layer. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The first surface has a recess and an electrical connecting pad. The light sensor or the thermal sensor is disposed on the first surface and covers the recess. The support is disposed on the first surface of the substrate. The cover is located on the support, such that a space is formed between the cover and the light sensor or between the cover and the thermal sensor. The isolation layer is located on the second surface of the substrate. The redistribution layer is located on the isolation layer and electrically connected to the electrical connecting pad.
  • An aspect of the present invention is to provide a manufacturing method of a semiconductor package.
  • According to an embodiment of the present invention, a manufacturing method of a semiconductor package includes the following steps. A wafer that has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface is provided, and the light sensor or the thermal sensor is disposed on the first surface and covers a recess of the first surface. A cover is disposed on the first surface of the wafer by at least one support, such that the cover is above the light sensor or the thermal sensor, and a space is formed between the cover and the light sensor or between the cover and the thermal sensor. A through hole is formed in the second surface of the wafer to expose the support and an electrical connecting pad of the wafer. An isolation layer is formed on the second surface of the wafer and a wall surface that surrounds the through hole. A redistribution layer is formed on the isolation layer, and the redistribution layer is electrically connected to the electrical connecting pad.
  • In the aforementioned embodiments of the present invention, since the first surface of the substrate of the semiconductor package of the present invention has the recess, the volume of the substrate of the semiconductor package may be reduced. As a result, signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package of the present invention is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention can be more fully understood by reading the following detailed description of the embodiments, with reference made to the accompanying drawings as follows:
  • FIG. 1 is a cross-sectional view of a conventional semiconductor package;
  • FIGS. 2A to 2J are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention;
  • FIGS. 3A to 3E are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention; and
  • FIGS. 4A to 4D are cross-sectional views of a manufacturing method of a semiconductor package according to one embodiment of the present invention.
    •  DETAILED DESCRIPTION
  • Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • In the present invention, a semiconductor package after being stacked, packaged, and diced may be used in various micro electro mechanical systems (MEMS), such as an image sensor capable of detecting through an electrical variation or a capacitive variation, and a detecting-type semiconductor package manufactured in wafer scale package process (WSP) and having image sensors, RF circuits, accelerators, gyroscopes, micro actuators, or pressure sensors.
  • As shown in FIGS. 2A to 2J, FIGS. 2A to 2J are cross-sectional views of a manufacturing method of a semiconductor package 2 (see FIG. 2J) according to one embodiment of the present invention.
  • As shown in FIG. 2A, a wafer 20 having at least one light sensor or thermal sensor 200, a first surface 20 a, and a second surface 20 b opposite to the first surface 20 a is provided. The light sensor or the thermal sensor 200 is disposed on the first surface 20 a. For example, the light sensor or the thermal sensor 200 may be located on first surface 20 a or in the first surface 20 a, the light sensor or the thermal sensor 200 may protrude from the first surface 20 a, the light sensor or the thermal sensor 200 and the first surface 20 a may be at the same level, the light sensor or the thermal sensor 200 may be recessed in the light sensor or the thermal sensor 200, and the present invention is not limited in this regard. Moreover, the first surface 20 a of the wafer 20 has a plurality of electrical connecting pads 201.
  • In this embodiment, the size of the wafer 20 may be 6 inches, 8 inches, 12 inches, etc., and the present invention is not limited in this regard. The light sensor or the thermal sensor 200 may be used to detect an infrared ray (IR), but the present invention is not limited thereto.
  • As shown in FIG. 2B, at least one support 21 is formed on the first surface 20 a of the wafer 20. In this embodiment, the support 21 is a dam layer and located on a portion of a surface of the electrical connecting pad 201.
  • As shown in FIG. 2C, a cover 22 is disposed on the support 21, such that the cover 22 is above the light sensor or the thermal sensor 200, and a first space P1 is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200.
  • In this embodiment, the cover 22 is made of silicon or quartz, and the thickness t of the cover 22 may be 300 μm, but the thinner, the better. An infrared ray may pass through the cover 22, such that the light sensor or the thermal sensor 200 may detect the infrared ray, but the present invention is not limited to the infrared ray.
  • Furthermore, the first space P1 is in a vacuum state, and the height h of the first space P1 may be in a range form 30 μm to 50 μm, such as 40 μm.
  • In addition, the cover 22 is made of light impermeable material (e.g., silicon or quartz). Therefore, an optical alignment process may not be used. As a result, the support 21 is disposed on the first surface 20 a of the wafer 20, and thereafter the cover 22 is used to cover the wafer 20, such that the alignment problem of the cover 22 (or the support 21) is prevented.
  • In another embodiment, when the cover 22 is made of light permeable material (e.g., glass), the support 21 may be disposed on cover 22, and next the support 21 and the cover 22 may be disposed on the first surface 20 a of the wafer 20 by an alignment method, such as optical alignment by utilizing the light transmittance of glass.
  • As shown in FIG. 2D, the thickness of the wafer 20 is reduced from the second surface 20 b, and a through hole 202 is formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201.
  • In this embodiment, after a process for reducing the thickness of the wafer 20 is performed, the thickness d of the wafer 20 may be in a range from 100 μm to 400 μm.
  • As shown in FIG. 2E, an isolation layer 23 is formed on the second surface 20 b of the wafer 20, and through hole 202 is filled with the isolation layer 23. Thereafter, an opening region 230 that is aligned with the light sensor or the thermal sensor 200 on the isolation layer 23 is formed, such that a portion of the second surface 20 b of the wafer 20 is exposed through the opening region 230.
  • As shown in FIG. 2F, an opening 203 is formed in the second surface 20 b of the wafer 20 in the opening region 230 to expose the light sensor or the thermal sensor 200. In this embodiment, the opening 203 is formed by and etching process.
  • As shown in FIG. 2G, a plate 24 is placed on the second surface 20 b of the wafer 20 to cover the opening 203, such that a second space P2 is formed between the plate 24 and the light sensor 200 or between the plate 24 and the thermal sensor 200. The plate 24 may support the wafer 20 to enhance structure strength.
  • In this embodiment, the plate 24 may be made of silicon or glass, and the plate 24 is disposed on the isolation layer 23 and the through hole 202. Moreover, the thickness r of the plate 24 may be in a range from 100 μm to 300 μm, such as 200 μm.
  • In addition, the second space P2 is in a vacuum state.
  • As shown in FIG. 2H, an via hole 240 communicated with the through hole 202 is formed in the plate 24, and the isolation layer 23 and the support 21 are removed from the through hole 202, such that the support 21 and a side surface of the electrical connecting pad 201.
  • As shown in FIG. 21, a redistribution layer 25 is formed on the plate 24, the sidewall of the via hole 240, and the sidewall of the through hole 202, such that the redistribution layer 25 is electrically connected to the electrical connecting pad 201.
  • In this embodiment, the redistribution layer 25 includes a dielectric layer 250 and a conductive layer 251 that is formed on the dielectric layer 250. The dielectric layer 250 is formed on the plate 24, the sidewall of the via hole 240, and the sidewall of the through hole 202.
  • Thereafter, a protection layer 26 is formed on the plate 24 and the redistribution layer 25, and an opening hole 260 is formed in the protection layer 26, such that a portion of a surface of the redistribution layer 251 on the plate 24 is exposed through the opening hole 260.
  • In this embodiment, the protection layer 26 may be made of solder mask material. A conductive protrusion 27 may be a solder ball, a protruding block, or a structure that is known in the industry, and the shape of the conductive protrusion 27 may be round, elliptical, square, and rectangular, but the present invention is not limited in this regard.
  • Afterwards, a dicing process is performed, and a cutting path S of the dicing process is along the through hole 202 and the via hole 240, such that a plurality of semiconductor packages shown in FIG. 2J are formed. Moreover, the conductive protrusion 27 may be formed on the redistribution layer 251 in the opening hole 260. A chip, such as a substrate 20 shown in FIG. 2J, may be referred to as the wafer 20 after being diced. The second space P2 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result.
  • Since the second surface of the substrate of the semiconductor package has the opening, the second space may be formed between the plate and the light sensor or between the plate and the thermal sensor. As a result, the volume of the substrate of the semiconductor package may be reduced, so that signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved.
  • Therefore, the use of the semiconductor package is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • It is to be noted that the materials of the elements described above will not be repeated in the following description. In the following description, other semiconductor packages and manufacturing methods thereof will be described.
  • FIGS. 3A to 3E are cross-sectional views of a manufacturing method of a semiconductor package 3 (see FIG. 3E) according to one embodiment of the present invention. As shown in FIG. 3A, the wafer 20 that has at least one light sensor or thermal sensor 200, the first surface 20 a, and the second surface 20 b opposite to the first surface 20 a is provided. The light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers a recess 204 of the first surface 20 a. The cover 22 may be disposed on the first surface 20 a of the wafer 20 by at least one support 21, such that the cover 22 is above the light sensor or the thermal sensor 200, and a space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200. Thereafter, the second surface 20 b of the wafer 20 may be ground.
  • As shown in FIG. 3A and FIG. 3B, after the cover 22 covers the light sensor or the thermal sensor 200, the through hole 202 may be formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201 of the wafer 20. Next, an isolation layer 23 a may be formed on the second surface 20 b of the wafer 20 and a wall surface 20 c that surrounds the through hole 202.
  • As shown in FIG. 3B and FIG. 3C, in this embodiment, the isolation layer 23 a may cover the through hole 202, and a knife is used to form a notch 202 a in the isolation layer 23 a in the through hole 202, such that the isolation layer 23 a is located on the wall surface of the wafer 20 surrounding the through hole 202. Thereafter, a redistribution layer 25 a is formed on the isolation layer 23 a and electrically connected to the electrical connecting pad 201, such that the structure shown in FIG. 3C may be obtained.
  • As shown in FIG. 3C and FIG. 3D, after the redistribution layer 25 a is formed, the protection layer 26 may be formed on the isolation layer 23 a and the redistribution layer 25 a. Afterwards, the protection layer 26 is patterned to form the opening hole 260 to expose the redistribution layer 25 a. After the opening hole 260 of the protection layer 26 is formed, the conductive protrusion 27 may be formed on the redistribution layer 25 a in the opening hole 260, such that the conductive protrusion 27 may be conducted with the electrical connecting pad 201 through the redistribution layer 25 a.
  • As shown in FIG. 3D and 3E, after the structure shown in FIG. 3D is obtained, the cover 22, the support 21, and the wafer 20 may be vertically diced along the through hole 202 (i.e., along the cutting path S), such that the semiconductor package 3 is obtained. The substrate 20 shown in FIG. 3E is the diced wafer 20.
  • The semiconductor package 3 includes the substrate 20, at least one support 21, the cover 22, the isolation layer 23 a, the redistribution layer 25 a, the protection layer 26, and the conductive protrusion 27. The substrate 20 has at least one light sensor or thermal sensor 200, the first surface 20 a and the second surface 20 b that is opposite to the first surface 20 a. The first surface 20 a has the recess 204 and the electrical connecting pad 201. The recess 204 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result. The light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204. The support 21 is disposed on the first surface 20 a of the substrate 20. The cover 22 is located on the support 21, such that the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200. The isolation layer 23 a is located on the second surface 20 b of the substrate 20. The redistribution layer 25 a is located on the isolation layer 23 a and electrically connected to the electrical connecting pad 201. The protection layer 26 is located on the isolation layer 23 a and the redistribution layer 25 a, and the protection layer 26 has the opening hole 260 to expose a portion of a surface of the redistribution layer 25 a. The conductive protrusion 27 is located on the redistribution layer 25 a that is in the opening hole 260.
  • In this embodiment, the substrate 20 has the wall surface 20 c adjacent to the electrical connecting pad 201 and the second surface 20 b, and the isolation layer 23 a is located on the wall surface 20 c. Furthermore, an obtuse angle is included between the wall surface 20 c and the second surface 20 b.
  • Since the first surface of the substrate of the semiconductor package has the recess, the volume of the substrate of the semiconductor package may be reduced. As a result, signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • FIGS. 4A to 4D are cross-sectional views of a manufacturing method of a semiconductor package 4 (see FIG. 4D) according to one embodiment of the present invention. As shown in FIG. 4A, the wafer 20 that has at least one light sensor or thermal sensor 200, the first surface 20 a, and the second surface 20 b opposite to the first surface 20 a is provided. The light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204 of the first surface 20 a. The cover 22 may be disposed on the first surface 20 a of the wafer 20 by at least one support 21, such that the cover 22 is above the light sensor or the thermal sensor 200, and the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200. Thereafter, the second surface 20 b of the wafer 20 may be ground.
  • As shown in FIG. 4A and FIG. 4B, after the cover 22 covers the light sensor or the thermal sensor 200, the through hole 202 may be formed in the second surface 20 b of the wafer 20 to expose the support 21 and the electrical connecting pad 201 of the wafer 20. Next, an isolation layer 23 b may be formed on the second surface 20 b of the wafer 20 and a wall surface 20 d that surrounds the through hole 202. In this embodiment, the wall surface 20 d is perpendicular to the second surface 20 b and the electrical connecting pad 201. Moreover, the isolation layer 23 b may be patterned to expose the electrical connecting pad 201.
  • As shown in FIG. 4B and FIG. 4C, thereafter, the redistribution layer 25 a may be formed on the isolation layer 23 b, such that the redistribution layer 25 a is electrically connected to the electrical connecting pad 201. After the redistribution layer 25 a is formed, the protection layer 26 may be formed on the isolation layer 23 b and the redistribution layer 25 a. Afterwards, the protection layer 26 is patterned to form the opening hole 260 to expose the redistribution layer 25 a. After the opening hole 260 of the protection layer 26 is formed, the conductive protrusion 27 may be formed on the redistribution layer 25 a in the opening hole 260, such that the conductive protrusion 27 may be conducted with the electrical connecting pad 201 through the redistribution layer 25 a, and the structure shown in FIG. 4C is obtained.
  • In this embodiment, a portion of the protection layer 26 is located in the through hole 202, such that a void is formed between the protection layer 26 and the electrical connecting pad 201.
  • As shown in FIG. 4C and FIG. 4D, after the structure shown in FIG. 4C is obtained, the cover 22, the support 21, and the wafer 20 may be vertically diced along the cutting path S, such that the semiconductor package 4 is obtained. The substrate 20 shown in FIG. 4D is the diced wafer 20.
  • The semiconductor package 4 includes the substrate 20, at least one support 21, the cover 22, the isolation layer 23 b, the redistribution layer 25 a, the protection layer 26, and the conductive protrusion 27. The substrate 20 has at least one light sensor or thermal sensor 200, the first surface 20 a and the second surface 20 b that is opposite to the first surface 20 a. The first surface 20 a has the recess 204 and the electrical connecting pad 201. The recess 204 can prevent a light signal or a thermal signal of the light sensor 200 or a light signal or a thermal signal of the thermal sensor 200 from dissipating through the substrate 20 to affect a detecting result. The light sensor or the thermal sensor 200 is disposed on the first surface 20 a and covers the recess 204. The support 21 is disposed on the first surface 20 a of the substrate 20. The cover 22 is located on the support 21, such that the space P′ is formed between the cover 22 and the light sensor 200 or between the cover 22 and the thermal sensor 200. The isolation layer 23 b is located on the second surface 20 b of the substrate 20. The redistribution layer 25 a is located on the isolation layer 23 b and electrically connected to the electrical connecting pad 201. The protection layer 26 is located on the isolation layer 23 b and the redistribution layer 25 a, and the protection layer 26 has the opening hole 260 to expose a portion of a surface of the redistribution layer 25 a. The conductive protrusion 27 is located on the redistribution layer 25 a that is in the opening hole 260.
  • In this embodiment, the substrate 20 has the wall surface 20 d adjacent to the electrical connecting pad 201 and the second surface 20 b, and the isolation layer 23 b is located on the wall surface 20 d. Furthermore, the wall surface 20 d is perpendicular to the second surface 20 b and the electrical connecting pad 201, and the protection layer 26 is located in the through hole 202.
  • Since the first surface of the substrate of the semiconductor package has the recess, the volume of the substrate of the semiconductor package may be reduced. As a result, signal noise can be decreased, and the detecting capability of the light sensor or the thermal sensor (e.g., infrared ray detecting capability) is improved. Therefore, the use of the semiconductor package is expanded and the purpose of multiple functions is achieved, thereby improving product competitiveness.
  • Although the present invention has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims.

Claims (11)

What is claimed is:
1. A semiconductor package, comprising:
a substrate having at least one light sensor or at least one thermal sensor, a first surface, and a second surface opposite to the first surface, wherein the first surface has a recess and an electrical connecting pad, and the at least one light sensor or the at least one thermal sensor is disposed on the first surface and covers the recess;
at least one support disposed on the first surface of the substrate;
a cover located on the at least one support, such that a space is formed between the cover and the at least one light sensor or between the cover and the at least one thermal sensor;
an isolation layer located on the second surface of the substrate; and
a redistribution layer located on the isolation layer and electrically connected to the electrical connecting pad.
2. The semiconductor package of claim 1, further comprising:
a protection layer located on the isolation layer and the redistribution layer, wherein the protection layer has an opening hole for exposing a portion of a surface of the redistribution layer.
3. The semiconductor package of claim 2, further comprising:
a conductive protrusion located on the redistribution layer in the opening hole.
4. The semiconductor package of claim 1, wherein the substrate has a wall surface adjacent to the electrical connecting pad and the second surface, and the isolation layer is located on the wall surface.
5. The semiconductor package of claim 4, wherein an obtuse angle is included between the wall surface and the second surface.
6. The semiconductor package of claim 4, wherein the wall surface is perpendicular to the second surface and the electrical connecting pad.
7. A manufacturing method of a semiconductor package, comprising:
providing a wafer that has at least one light sensor or at least one thermal sensor, a first surface, and a second surface opposite to the first surface, wherein the at least one light sensor or the at least one thermal sensor is disposed on the first surface and covers a recess of the first surface;
disposing a cover on the first surface of the wafer by at least one support, such that the cover is above the at least one light sensor or the at least one thermal sensor, and a space is formed between the cover and the at least one light sensor or between the cover and the at least one thermal sensor;
forming a through hole in the second surface of the wafer for exposing the at least one support and an electrical connecting pad of the wafer;
forming an isolation layer on the second surface of the wafer and a wall surface that surrounds the through hole; and
forming a redistribution layer on the isolation layer, wherein the redistribution layer is electrically connected to the electrical connecting pad.
8. The manufacturing method of the semiconductor package of claim 7, forming the isolation layer on the second surface of the wafer and the wall surface that surrounds the through hole further comprising:
using the isolation layer to cover the through hole; and
forming a notch in the isolation layer in the through hole, such that the isolation layer is located on the wall surface of the wafer surrounding the through hole.
9. The manufacturing method of the semiconductor package of claim 7, further comprising:
forming a protection layer on the isolation layer and the redistribution layer; and
patterning the protection layer to form an opening hole for exposing the redistribution layer.
10. The manufacturing method of the semiconductor package of claim 9, further comprising:
forming a conductive protrusion on the redistribution layer in the opening hole.
11. The manufacturing method of the semiconductor package of claim 7, further comprising:
vertically dicing the cover, the at least one support, and the wafer along the through hole.
US15/394,464 2014-10-22 2016-12-29 Semiconductor package and manufacturing method thereof Abandoned US20170110641A1 (en)

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