US20170103960A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US20170103960A1
US20170103960A1 US15/173,742 US201615173742A US2017103960A1 US 20170103960 A1 US20170103960 A1 US 20170103960A1 US 201615173742 A US201615173742 A US 201615173742A US 2017103960 A1 US2017103960 A1 US 2017103960A1
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United States
Prior art keywords
plating
semiconductor device
semiconductor
semiconductor element
layer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US15/173,742
Inventor
Daisuke Murata
Yuji Imoto
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IMOTO, YUJI, MURATA, DAISUKE
Publication of US20170103960A1 publication Critical patent/US20170103960A1/en
Priority to US16/107,966 priority Critical patent/US10658324B2/en
Abandoned legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/013—Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10254—Diamond [C]
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
    • H01L2924/15724—Aluminium [Al] as principal constituent
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    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/36—Material effects
    • H01L2924/365—Metallurgical effects
    • H01L2924/3656—Formation of Kirkendall voids

Definitions

  • the present invention relates to a semiconductor device in which plating is formed on a surface of an aluminum pattern on an insulating substrate and a semiconductor element is joined to the plating.
  • semiconductor devices are used as inverters or regenerative converters that control the motors.
  • plating is formed on a surface of an aluminum pattern on an insulating substrate and a semiconductor element is bonded to the plating.
  • a plating thickness necessary for joining is a minimum on the order of 3 to 5 ⁇ m and the plating thickness is preferably small for reasons related to thermal resistance or the like (e.g., see JP 7-122678 A).
  • the present invention has been implemented to solve the above-described problems and it is an object of the present invention to provide a semiconductor device capable of preventing characteristic variations and improving reliability.
  • a semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 ⁇ m or more.
  • the thicknesses of the plating is assumed to be 10 ⁇ m or more. This makes it less likely for the semiconductor element to be affected by the aluminum pattern deformed due to thermal stress. Therefore, it is possible to prevent characteristic variations due to the deformation of the semiconductor element and improve reliability (power cycle life) against destruction of the semiconductor element.
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention.
  • FIG. 2 is a diagram illustrating results of measuring hardness of plating.
  • FIG. 3 is a diagram illustrating plastic deformation of the aluminum pattern having a conventional plating thickness.
  • FIG. 4 is a diagram illustrating plastic deformation of the aluminum pattern having a plating thickness of 10 ⁇ m.
  • FIG. 5 is a diagram illustrating a cumulative defect rate vs a power cycle number.
  • FIG. 6 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a semiconductor device according to a third embodiment of the present invention.
  • FIG. 8 is a cross-sectional view illustrating a semiconductor device according to a fourth embodiment of the present invention.
  • FIG. 9 and FIG. 10 are cross-sectional views illustrating modifications of the semiconductor device according to the fourth embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a semiconductor device according to a fifth embodiment of the present invention.
  • FIG. 12 and FIG. 13 are top views illustrating a partially enlarged view of the semiconductor device according to the fifth embodiment of the present invention.
  • FIGS. 14 to 17 are cross-sectional views illustrating modifications of the semiconductor device according to the fifth embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention.
  • An aluminum pattern 2 made of a pure aluminum or alloy aluminum material is formed on an insulating substrate 1 .
  • Platings 3 a and 3 b are formed on a surface of the aluminum pattern 2 .
  • the platings 3 a and 3 b are arranged side by side.
  • the platings 3 a and 3 b are nickel platings and have a thickness of 10 ⁇ m or more.
  • Semiconductor elements 4 a and 4 b are joined to the platings 3 a and 3 b respectively via solder 5 .
  • An electrode 6 is joined to top surfaces of the semiconductor elements 4 a and 4 b via solder 7 .
  • the solder 5 and the solder 7 may be of the same composition or different compositions.
  • An electrode 8 is joined to the aluminum pattern 2 . The whole this part is sealed with a sealing material 9 such as resin.
  • FIG. 2 is a diagram illustrating results of measuring hardness of plating. Table I also shows the measurement results. Indentation depths are expressed in numerical values of an apparatus laser detector.
  • the plating thickness is assumed to be 10 ⁇ m, no superiority is observed in a degree of adhesion to the aluminum pattern compared to a case where the plating thickness is 5 ⁇ m and both cases correspond to a fracture mode of the plated part. Moreover, Vickers hardness of the plating surface depends on physical properties of nickel and is not affected by the thickness, and therefore even when the plating thickness is set to 10 ⁇ m, no superiority is observed. On the other hand, when the plating thickness is assumed to be 10 ⁇ m, apparent Vickers hardness including the aluminum pattern becomes approximately 2.5 times. Therefore, it is considered that deformation of plating and deformation of the aluminum pattern can be suppressed by increasing the plating thickness.
  • FIG. 3 is a diagram illustrating plastic deformation of the aluminum pattern having a conventional plating thickness.
  • FIG. 4 is a diagram illustrating plastic deformation of the aluminum pattern having a plating thickness of 10 ⁇ m. Both are analysis results of simulation of plastic deformation five power cycles later.
  • the plating thickness By setting the plating thickness to 10 ⁇ m it is possible to suppress plastic deformation of the aluminum pattern and move a maximum point from a central part to an outside of the semiconductor element. Furthermore, plastic deformation of the plating itself is suppressed and propagation of deformation of the aluminum pattern to the semiconductor element is suppressed.
  • FIG. 5 is a diagram illustrating a cumulative defect rate vs a power cycle number. It is observed that a power cycle life improves when the plating thickness is 10 ⁇ m compared to when the plating thickness is 4 ⁇ m.
  • the thicknesses of the platings 3 a and 3 b are assumed to be 10 ⁇ m or more. This makes it less likely for the semiconductor elements 4 a and 4 b to be affected by the aluminum pattern 2 deformed due to thermal stress. Therefore, it is possible to prevent characteristic variations due to the deformation of the semiconductor elements 4 a and 4 b and improve reliability (power cycle life) against destruction of the semiconductor elements 4 a and 4 b.
  • the surface of the aluminum pattern 2 is preferably subjected to total or partial work hardening through shot peening or the like. This suppresses the deformation of the aluminum pattern 2 itself, and can thereby amplify the effect of the platings 3 a and 3 b.
  • FIG. 6 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention.
  • the plating 3 a is a multilayered film including a lower layer film 10 a and an upper layer film 11 a formed on the lower layer film 10 a .
  • the plating 3 b is a multilayered film including a lower layer film 10 b and an upper layer film 11 b formed on the lower layer film 10 b .
  • the lower layer films 10 a and 10 b are made of nickel or the like which has higher rigidity and less likely to become deformed than the upper layer films 11 a and 11 b .
  • the upper layer films 11 a and 11 b are made of gold or the like having higher wettability with respect to the solder 5 than the lower layer films 10 a and 10 b . This makes it possible to keep strength, improve reliability while improving wettability of the solder 5 and reducing voids as well, and thereby also improve assemblability.
  • FIG. 7 is a cross-sectional view illustrating a semiconductor device according to a third embodiment of the present invention.
  • a semiconductor element 4 a is thinner than a semiconductor element 4 b .
  • the plating 3 a is made to be thicker than the plating 3 b .
  • the semiconductor elements 4 a and 4 b having different thicknesses such as an IGBT and a diode are mounted, it is possible to cause the top surfaces of the semiconductor elements 4 a and 4 b to have the same height without adjusting the thickness of the solder 5 .
  • This makes joining of electrodes to the semiconductor elements 4 a and 4 b easier and improves assemblability.
  • the thickness of the solder 5 can be made uniform, it is possible to prevent erroneous mounting and reduce a unit price by purchasing products with the same specification.
  • FIG. 8 is a cross-sectional view illustrating a semiconductor device according to a fourth embodiment of the present invention.
  • the thicknesses of the platings 3 a and 3 b also change directly below the semiconductor elements 4 a and 4 b . This makes it possible to increase the thicknesses of the platings 3 a and 3 b directly below central parts of the semiconductor elements 4 a and 4 b where deformation increases to thereby suppress the deformation of the semiconductor elements 4 a and 4 b .
  • the thickness of the solder 5 at those locations can be reduced, thermal resistance decreases.
  • FIG. 9 and FIG. 10 are cross-sectional views illustrating modifications of the semiconductor device according to the fourth embodiment of the present invention.
  • the thicknesses of the platings 3 a and 3 b directly below peripheral parts of the semiconductor elements 4 a and 4 b may be increased or as shown in FIG. 10 , the thicknesses of the platings 3 a and 3 b directly below central parts and peripheral parts of the semiconductor elements 4 a and 4 b may be increased.
  • locations where thicknesses are to be increased may be changed for each semiconductor element such as directly below a central part of an IGBT, directly below a peripheral part of the diode.
  • FIG. 11 is a cross-sectional view illustrating a semiconductor device according to a fifth embodiment of the present invention.
  • FIG. 12 and FIG. 13 are top views illustrating a partially enlarged view of the semiconductor device according to the fifth embodiment of the present invention.
  • a groove 12 is provided around each of the semiconductor elements 4 a and 4 b on the top surface of the aluminum pattern 2 .
  • the groove 12 may be provided in the entire periphery of each of the semiconductor elements 4 a and 4 b or as shown in FIG. 13 , the grooves 12 may be provided in parts of the periphery.
  • the groove 12 can suppress deformation from outside the groove 12 of the aluminum pattern 2 .
  • the groove 12 can suppress a solder flow and also improve assemblability. Adhesiveness of the sealing material 9 can also be improved.
  • FIGS. 14 to 17 are cross-sectional views illustrating modifications of the semiconductor device according to the fifth embodiment of the present invention.
  • the cross sectional shape of the groove 12 is rectangular or square, but without being limited to this, similar effects can also be obtained if the cross sectional shape is trapezoidal as shown in FIG. 14 and FIG. 15 , triangular as shown in FIG. 16 or semicircular as shown in FIG. 17 .
  • the semiconductor elements 4 a and 4 b are not limited to those formed of silicon, but may also be formed of a wide band gap semiconductor having a wider band gap than silicon.
  • the wide band gap semiconductor include silicon carbide, nitride gallium-based material or diamond. This prevents deformation of the semiconductor element even when the semiconductor elements 4 a and 4 b become hot and makes it possible to secure high reliability. Furthermore, since a high withstand voltage and a high maximum allowable current density are obtained, the system can be downsized. Using the downsized semiconductor elements 4 a and 4 b also allows a semiconductor device into which the semiconductor elements 4 a and 4 b are assembled to be downsized.
  • the semiconductor elements 4 a and 4 b exhibit high heat resistance, it is possible to downsize radiator fins of a heat sink and substitute a water cooling system by an air cooling system, which allows the semiconductor device to be further downsized. Furthermore, since the semiconductor elements 4 a and 4 b have less power loss and exhibit high efficiency, the semiconductor device can achieve higher efficiency. Both the semiconductor elements 4 a and 4 b are preferably formed of wide band gap semiconductors, but either one may be formed of a wide band gap semiconductor and it is still possible to obtain the effects described in the present embodiment.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.

Description

    BACKGROUND OF THE INVENTION
  • Field
  • The present invention relates to a semiconductor device in which plating is formed on a surface of an aluminum pattern on an insulating substrate and a semiconductor element is joined to the plating.
  • Background
  • In automobiles or trains powered by electric motors, semiconductor devices are used as inverters or regenerative converters that control the motors. In such semiconductor devices, plating is formed on a surface of an aluminum pattern on an insulating substrate and a semiconductor element is bonded to the plating. In conventional semiconductor devices, it is believed that a plating thickness necessary for joining is a minimum on the order of 3 to 5 μm and the plating thickness is preferably small for reasons related to thermal resistance or the like (e.g., see JP 7-122678 A).
  • When a semiconductor element starts operating and generating heat, thus producing temperature swing, thermal stress is generated since there is a large difference in a coefficient of linear expansion between the aluminum pattern and the insulating substrate. Therefore, the aluminum pattern susceptible to plastic deformation becomes deformed due to the thermal stress. In the case of the conventional plating thickness on the order of 3 to 5 μm, the influence of this deformation is transmitted to the semiconductor element via the plating and solder, and the semiconductor element also becomes deformed. This may cause characteristic variations of the semiconductor element, which may even lead to destruction of the semiconductor element. Special measures may be required since stress applied to the element increases as the semiconductor element becomes thinner.
    • SUMMARY
  • The present invention has been implemented to solve the above-described problems and it is an object of the present invention to provide a semiconductor device capable of preventing characteristic variations and improving reliability.
  • According to the present invention, a semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.
  • In the present invention, the thicknesses of the plating is assumed to be 10 μm or more. This makes it less likely for the semiconductor element to be affected by the aluminum pattern deformed due to thermal stress. Therefore, it is possible to prevent characteristic variations due to the deformation of the semiconductor element and improve reliability (power cycle life) against destruction of the semiconductor element.
  • Other and further objects, features and advantages of the invention will appear more fully from the following description.
    • BRIEF DESCRIPTION OF DRAWINGS
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention.
  • FIG. 2 is a diagram illustrating results of measuring hardness of plating.
  • FIG. 3 is a diagram illustrating plastic deformation of the aluminum pattern having a conventional plating thickness.
  • FIG. 4 is a diagram illustrating plastic deformation of the aluminum pattern having a plating thickness of 10 μm.
  • FIG. 5 is a diagram illustrating a cumulative defect rate vs a power cycle number.
  • FIG. 6 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a semiconductor device according to a third embodiment of the present invention.
  • FIG. 8 is a cross-sectional view illustrating a semiconductor device according to a fourth embodiment of the present invention.
  • FIG. 9 and FIG. 10 are cross-sectional views illustrating modifications of the semiconductor device according to the fourth embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a semiconductor device according to a fifth embodiment of the present invention.
  • FIG. 12 and FIG. 13 are top views illustrating a partially enlarged view of the semiconductor device according to the fifth embodiment of the present invention.
  • FIGS. 14 to 17 are cross-sectional views illustrating modifications of the semiconductor device according to the fifth embodiment of the present invention.
    •  DESCRIPTION OF EMBODIMENTS
  • A semiconductor device according to the embodiments of the present invention will be described with reference to the drawings. The same components will be denoted by the same symbols, and the repeated description thereof may be omitted.
    • First Embodiment
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention. An aluminum pattern 2 made of a pure aluminum or alloy aluminum material is formed on an insulating substrate 1. Platings 3 a and 3 b are formed on a surface of the aluminum pattern 2. The platings 3 a and 3 b are arranged side by side. The platings 3 a and 3 b are nickel platings and have a thickness of 10 μm or more.
  • Semiconductor elements 4 a and 4 b are joined to the platings 3 a and 3 b respectively via solder 5. An electrode 6 is joined to top surfaces of the semiconductor elements 4 a and 4 b via solder 7. The solder 5 and the solder 7 may be of the same composition or different compositions. An electrode 8 is joined to the aluminum pattern 2. The whole this part is sealed with a sealing material 9 such as resin.
  • FIG. 2 is a diagram illustrating results of measuring hardness of plating. Table I also shows the measurement results. Indentation depths are expressed in numerical values of an apparatus laser detector.
  • TABLE 1
    Test Length of Indentation Hardness
    Sample load diagonal (μm) depth (μm) (HV)
    Specification 1 50 g 40 7 58.2
    Specification 2 50 g 39 7.5 60.0
    Specification 3 50 g 36.5 6.7 67.3
    Specification 4 50 g 25 4 155.6
  • When the plating thickness is assumed to be 10 μm, no superiority is observed in a degree of adhesion to the aluminum pattern compared to a case where the plating thickness is 5 μm and both cases correspond to a fracture mode of the plated part. Moreover, Vickers hardness of the plating surface depends on physical properties of nickel and is not affected by the thickness, and therefore even when the plating thickness is set to 10 μm, no superiority is observed. On the other hand, when the plating thickness is assumed to be 10 μm, apparent Vickers hardness including the aluminum pattern becomes approximately 2.5 times. Therefore, it is considered that deformation of plating and deformation of the aluminum pattern can be suppressed by increasing the plating thickness.
  • FIG. 3 is a diagram illustrating plastic deformation of the aluminum pattern having a conventional plating thickness. FIG. 4 is a diagram illustrating plastic deformation of the aluminum pattern having a plating thickness of 10 μm. Both are analysis results of simulation of plastic deformation five power cycles later. By setting the plating thickness to 10 μm it is possible to suppress plastic deformation of the aluminum pattern and move a maximum point from a central part to an outside of the semiconductor element. Furthermore, plastic deformation of the plating itself is suppressed and propagation of deformation of the aluminum pattern to the semiconductor element is suppressed.
  • FIG. 5 is a diagram illustrating a cumulative defect rate vs a power cycle number. It is observed that a power cycle life improves when the plating thickness is 10 μm compared to when the plating thickness is 4 μm.
  • As described above, in the present embodiment, the thicknesses of the platings 3 a and 3 b are assumed to be 10 μm or more. This makes it less likely for the semiconductor elements 4 a and 4 b to be affected by the aluminum pattern 2 deformed due to thermal stress. Therefore, it is possible to prevent characteristic variations due to the deformation of the semiconductor elements 4 a and 4 b and improve reliability (power cycle life) against destruction of the semiconductor elements 4 a and 4 b.
  • The surface of the aluminum pattern 2 is preferably subjected to total or partial work hardening through shot peening or the like. This suppresses the deformation of the aluminum pattern 2 itself, and can thereby amplify the effect of the platings 3 a and 3 b.
    • Second Embodiment
  • FIG. 6 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention. In the present embodiment, the plating 3 a is a multilayered film including a lower layer film 10 a and an upper layer film 11 a formed on the lower layer film 10 a. Similarly, the plating 3 b is a multilayered film including a lower layer film 10 b and an upper layer film 11 b formed on the lower layer film 10 b. The lower layer films 10 a and 10 b are made of nickel or the like which has higher rigidity and less likely to become deformed than the upper layer films 11 a and 11 b. The upper layer films 11 a and 11 b are made of gold or the like having higher wettability with respect to the solder 5 than the lower layer films 10 a and 10 b. This makes it possible to keep strength, improve reliability while improving wettability of the solder 5 and reducing voids as well, and thereby also improve assemblability.
    • Third Embodiment
  • FIG. 7 is a cross-sectional view illustrating a semiconductor device according to a third embodiment of the present invention. In the present embodiment, a semiconductor element 4 a is thinner than a semiconductor element 4 b. Thus, the plating 3 a is made to be thicker than the plating 3 b. In this way, when the semiconductor elements 4 a and 4 b having different thicknesses such as an IGBT and a diode are mounted, it is possible to cause the top surfaces of the semiconductor elements 4 a and 4 b to have the same height without adjusting the thickness of the solder 5. This makes joining of electrodes to the semiconductor elements 4 a and 4 b easier and improves assemblability. Moreover, since the thickness of the solder 5 can be made uniform, it is possible to prevent erroneous mounting and reduce a unit price by purchasing products with the same specification.
    • Fourth Embodiment
  • FIG. 8 is a cross-sectional view illustrating a semiconductor device according to a fourth embodiment of the present invention. In the present embodiment, the thicknesses of the platings 3 a and 3 b also change directly below the semiconductor elements 4 a and 4 b. This makes it possible to increase the thicknesses of the platings 3 a and 3 b directly below central parts of the semiconductor elements 4 a and 4 b where deformation increases to thereby suppress the deformation of the semiconductor elements 4 a and 4 b. Moreover, since the thickness of the solder 5 at those locations can be reduced, thermal resistance decreases.
  • FIG. 9 and FIG. 10 are cross-sectional views illustrating modifications of the semiconductor device according to the fourth embodiment of the present invention. As shown in FIG. 9, the thicknesses of the platings 3 a and 3 b directly below peripheral parts of the semiconductor elements 4 a and 4 b may be increased or as shown in FIG. 10, the thicknesses of the platings 3 a and 3 b directly below central parts and peripheral parts of the semiconductor elements 4 a and 4 b may be increased. Furthermore, locations where thicknesses are to be increased may be changed for each semiconductor element such as directly below a central part of an IGBT, directly below a peripheral part of the diode.
    • Fifth Embodiment
  • FIG. 11 is a cross-sectional view illustrating a semiconductor device according to a fifth embodiment of the present invention. FIG. 12 and FIG. 13 are top views illustrating a partially enlarged view of the semiconductor device according to the fifth embodiment of the present invention. A groove 12 is provided around each of the semiconductor elements 4 a and 4 b on the top surface of the aluminum pattern 2. As shown in FIG. 12, the groove 12 may be provided in the entire periphery of each of the semiconductor elements 4 a and 4 b or as shown in FIG. 13, the grooves 12 may be provided in parts of the periphery. In this way, the groove 12 can suppress deformation from outside the groove 12 of the aluminum pattern 2. Furthermore, the groove 12 can suppress a solder flow and also improve assemblability. Adhesiveness of the sealing material 9 can also be improved.
  • FIGS. 14 to 17 are cross-sectional views illustrating modifications of the semiconductor device according to the fifth embodiment of the present invention. According to FIG. 1, the cross sectional shape of the groove 12 is rectangular or square, but without being limited to this, similar effects can also be obtained if the cross sectional shape is trapezoidal as shown in FIG. 14 and FIG. 15, triangular as shown in FIG. 16 or semicircular as shown in FIG. 17.
  • Note that the semiconductor elements 4 a and 4 b are not limited to those formed of silicon, but may also be formed of a wide band gap semiconductor having a wider band gap than silicon. Examples of the wide band gap semiconductor include silicon carbide, nitride gallium-based material or diamond. This prevents deformation of the semiconductor element even when the semiconductor elements 4 a and 4 b become hot and makes it possible to secure high reliability. Furthermore, since a high withstand voltage and a high maximum allowable current density are obtained, the system can be downsized. Using the downsized semiconductor elements 4 a and 4 b also allows a semiconductor device into which the semiconductor elements 4 a and 4 b are assembled to be downsized. Furthermore, since the semiconductor elements 4 a and 4 b exhibit high heat resistance, it is possible to downsize radiator fins of a heat sink and substitute a water cooling system by an air cooling system, which allows the semiconductor device to be further downsized. Furthermore, since the semiconductor elements 4 a and 4 b have less power loss and exhibit high efficiency, the semiconductor device can achieve higher efficiency. Both the semiconductor elements 4 a and 4 b are preferably formed of wide band gap semiconductors, but either one may be formed of a wide band gap semiconductor and it is still possible to obtain the effects described in the present embodiment.
  • Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.
  • The entire disclosure of Japanese Patent Application No. 2015-201381, filed on Oct. 9, 2015 including specification, claims, drawings and summary, on which the Convention priority of the present application is based, is incorporated herein by reference in its entirety.

Claims (7)

1. A semiconductor device comprising:
an insulating substrate;
an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate;
a plating formed on a surface of the aluminum pattern; and
a semiconductor element joined to the plating,
wherein a thickness of the plating is 10 μm or more.
2. The semiconductor device of claim 1, further comprising a solder joining the semiconductor element to the plating,
wherein the plating includes a lower layer film and an upper layer film formed on the lower layer film,
the lower layer film has higher rigidity than the upper layer film, and
the upper layer film has higher wettability with respect to the solder than the lower layer film.
3. The semiconductor device of claim 1, wherein the plating includes first and second platings arranged side by side,
the semiconductor element includes first and second semiconductor elements joined to the first and second platings respectively,
the first semiconductor element is thinner than the second semiconductor element, and
the first plating is thicker than the second plating.
4. The semiconductor device of claim 1, wherein a thickness of the plating changes directly below the semiconductor element.
5. The semiconductor device of claim 1, wherein a groove is provided in a periphery of the semiconductor element or in part of the periphery on a top surface of the aluminum pattern.
6. The semiconductor device of claim 1, wherein the surface of the aluminum pattern is subjected to total or partial work hardening.
7. The semiconductor device of claim 1, wherein the semiconductor element is formed of a wide band gap semiconductor.
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US10658324B2 (en) 2020-05-19
JP2017073529A (en) 2017-04-13

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